CN100596312C - Magnetron sputtering device - Google Patents
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- CN100596312C CN100596312C CN200610155915A CN200610155915A CN100596312C CN 100596312 C CN100596312 C CN 100596312C CN 200610155915 A CN200610155915 A CN 200610155915A CN 200610155915 A CN200610155915 A CN 200610155915A CN 100596312 C CN100596312 C CN 100596312C
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 238000004544 sputter deposition Methods 0.000 claims abstract description 20
- 230000001105 regulatory effect Effects 0.000 claims description 14
- 238000009826 distribution Methods 0.000 abstract description 11
- 238000005530 etching Methods 0.000 abstract description 10
- 238000000151 deposition Methods 0.000 abstract description 9
- 230000008021 deposition Effects 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 16
- 238000000034 method Methods 0.000 description 9
- 239000000725 suspension Substances 0.000 description 7
- 230000001276 controlling effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 239000000376 reactant Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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Abstract
The invention relates to magnetron sputtering deposition technology for vacuum coating, more particularly to a sputtering device used in vacuum sputtering coating, which comprises a magnetron (1) andan electromagnetic coil (6) coaxially and oppositely arranged, wherein the electromagnetic coil (6) can move back and forth along the central axis of the magnetron (1). The magnetic field configuration distributions of the magnetron (1) and a substrate region as well as the plasma density of the substrate region can be conveniently and effectively changed by controlling the magnitude and the direction of the current of the electromagnetic coil (6) and by changing the relative positions of the electromagnetic coil and the magnetron. Additionally, the etching track on the target surface is widened when the electromagnetic coil (6) is supplied with a low-frequency AC, thus achieving more uniform etching, easily and effectively improving the utilization rate of the target and suppressing the spatial nonuniformity of the thickness and the performance of the deposited thin film. The invention has the advantages of simple structure, convenient and easy operation, etc.
Description
Technical field
The present invention relates to the vacuum plating magnetron sputtered deposition technology, more specifically, relate to a kind of magnetic controlled tube sputtering apparatus that when vacuum sputtering coating, uses, and the method for using this device magnetron sputtering.
Background technology
Magnetron sputtering plating is one of topmost technology during industrial plated film is produced, and is particularly suitable for large-area coating film production.Need the problem of aspects such as special concern target utilization, deposit film homogeneity, substrate region plasma density in the production.
Usually magnetron is balance-dividing attitude and nonequilibrium state, outer magnet magnetic flux about equally in the equilibrium state magnetron, magnetic line of force is in magnetic control target surface closure, and plasma body (mainly being electronics) is constrained near the target surface, increases probability of collision, improved ionization efficient, thereby can be under lower operating air pressure and voltage just can the starting the arc and keep glow discharge, and reduce the bombardment of plasma body simultaneously to substrate, the suffered ion bombardment of substrate is little, saturation ion current density is little, usually about～10
-1MA/cm
2Magnitude is beneficial to the realization low temperature depositing; On the other hand, plated film need strengthen the plasma density of substrate region and the ionization level of reactant gases sometimes.In order to address that need, people have invented the non-balance magnetically controlled sputter technology, promptly allow the magnetic line of force on magnetic controlling target surface not closed, magnetic line of force can be along the border extended of target to substrate region, thereby portions of electronics and ion can expand to substrate along magnetic line of force, increased the specific ionization and the plasma density of substrate region, substrate place saturation ion current density is big, can reach usually～1-10mA/cm
2Magnitude.But also there are some problems: on the one hand, in order to increase substrate region specific ionization and plasma density, excessively disperse the magnetic line of force on magnetic controlling target surface, might can not be effectively with electronics/plasma containment before the magnetic control target surface, the ability that also is the ionization working gas is lower, thereby causing the impedance of magnetron higher, magnetron build-up of luminance difficulty and power density are too small; On the other hand, the magneticstrength decay that permanent magnet is produced in the magnetron is very fast, and the field intensity of the substrate region outside several centimetres of distance target surfaces has only several Gausses, is difficult to substrate region electronics and ion motion are produced considerable influence; At last, satisfy the different films of deposition, may need the magnetic controlling target (also being substrate region different plasma density) of different non-equilibrium degree, and be difficult to sometimes meet the demands with same fixedly magnetron sputtering target.
The non-equilibrium degree that changes magnetron is mainly by changing the magnetron magnetic field structure, as regulate permanent magnet field intensity rate inside and outside the magnetron, perhaps replace magnet with solenoid, " intelligent cathode " technology as German SINGULUSTECHNOLOGIES company, two solenoids in electrode vessel, have been designed, by regulating sputtering power, sputtering time and the electric current that flows through solenoid can be optimized whole sputter procedure.By regulating the solenoid current in two steps, almost can optimize being coated with of any novel material.But because the restriction of magnetron internal space, the solenoid size is restricted, and corresponding magneticstrength also obtains restriction, and in order to reach the effective control to sputter procedure, the design and the manufacturing of entire equipment acquire a certain degree of difficulty in addition.
The inhomogeneous plasma sputter of magnetron has also determined the non-homogeneous etching of target in essence in addition, and target utilization is not high; And the space heterogeneity of deposited particles flow (roughly showing as film deposition rate) and energy distribution, cause spatially inhomogeneous of the thickness of large-area film deposition and performance.The method that improves target utilization also roughly is divided into static method and dynamic approach: the former mainly is the magnetic structure design of optimizing magnetron; Latter's dynamic approach mainly is by mobile yoke and moving magnet (move mode divides rotation and reciprocal again), cardinal principle all is to change target surface magnetic field dynamically, change target surface local plasmon body etch areas, reaching increases target etching scope, effectively improve target utilization, but also have problems such as the structural complexity that increased magnetron and manufacture difficulty simultaneously.
Need a kind of device, method both can be easily according to different plated film needs, at any time change the non-equilibrium degree of magnetic controlling target, strengthen or weaken ion bombardment intensity, the plasma density at substrate place, simultaneously also can increase target utilization in addition, improve spatially inhomogeneous of the thickness of large-area film deposition and performance.
Summary of the invention
In order to address that need, the invention provides a kind of magnetic controlled tube sputtering apparatus and using method thereof, what employing added that solenoid on the one hand can be easily and effectively adjusts the non-equilibrium degree of magnetron according to the plated film needs, strengthen or weaken the ion bombardment at substrate place, can be placed near the magnetron, or the substrate place, or a certain position between magnetron and the substrate etc., and can control realization easily by changing the solenoid current size and Orientation; To being placed near the solenoid magnetron, pass to low frequency ac on the other hand, can simple and effective raising target utilization, and improve spatially inhomogeneous of the thickness of large-area film deposition and performance simultaneously.
Technical scheme of the present invention is:
A kind of sputter equipment type A of in the vacuum sputtering district, using of being used for:
Be made up of magnetron and two parts of solenoid, described two devices are placed coaxially to each other; Solenoid can move the position of controlling with magnetron along the distance of magnetron medullary ray, can regulate the size of current and the direction of solenoid, produces a co-axial auxiliary magnetic field (field intensity roughly arrives in hundreds of Gauss's the scope tens).Described magnetron can be the equilibrium state magnetron, also can be the nonequilibrium state planar magnetron, and described magnetron can be the circular flat magnetron, also can be the rectangular plane magnetic control pipe.Described solenoid can be that circle also can be a rectangle.Described solenoid can move along the distance of magnetron medullary ray control with the position of magnetron or be placed on magnetron or substrate near.The magnetizing current that described solenoid applied comprises galvanic current, and its direction and size can change, and the size of current variation range makes solenoid produce the 10-500 gaussian intensity; The magnetizing current that described solenoid applied also comprises low-frequency ac, and low-frequency range is 10-1000Hz, and size of current and frequency can change, and the size of current variation range produces in the 10-500 gaussian intensity solenoid.
Be used for the type of device B that in the vacuum sputtering district, uses:
Be made up of magnetron and two parts of a pair of solenoid, place coaxially to each other, wherein a solenoid is placed on the magnetron outside along the magnetron central axis; Another solenoid is placed on the substrate place; Can regulate the size of current and the direction of solenoid, produce a co-axial auxiliary magnetic field.Described solenoid can be that circle also can be a rectangle.The magnetizing current that solenoid is applied before the described magnetron is a low-frequency ac, and frequency is 10-1000Hz, and size of current and frequency can be regulated; The magnetizing current that substrate place solenoid is applied is direct current or low-frequency ac, galvanic current direction and size can be regulated, the size of current variation range produces in the 10-500 gaussian intensity solenoid, low-frequency ac electric current size and frequency can be regulated, frequency is 10-1000Hz, and the size of current variation range produces in the 10-500 gaussian intensity solenoid.The target of described magnetron can be ceramic targets such as metal, alloy and nitride oxide.
Advantage of the present invention is as follows:
1. the present invention has adopted electromagnetic spool device to adopt and has added solenoid can be adjusted magnetron effectively easily in real time according to the plated film needs non-equilibrium degree, also is the suffered plasma bombardment intensity of real time altering substrate region.
2. with respect to direct adjustment magnetron, adopt to regulate and to add the saturation ion current density that solenoid current can (be striden an order of magnitude) and change the substrate place in a wider context, it also is ionic flux, and substrate suspension voltage changes among a small circle simultaneously, also can keep the bombardment of low energy ion energy.
3. when solenoid passes to low frequency ac, can simple and effective raising target utilization, and improve spatially inhomogeneous of the thickness of large-area film deposition and performance simultaneously.
4. the present invention has also that simple in structure, fitting operation is convenient, advantage of low manufacturing cost.
Description of drawings
Fig. 1. apparatus of the present invention type A internal vacuum chamber divides the device diagrammatic cross-section;
Fig. 2. apparatus of the present invention type B internal vacuum chamber divides the device diagrammatic cross-section;
Fig. 3. near magnetic field configuration distribution schematic diagram (section right half part view) when type of device A solenoid is placed on the magnetron;
Fig. 4. near magnetic field configuration distribution schematic diagram (section right half part view) when type of device A solenoid is placed on the substrate;
Fig. 5. near the distribution of target face magnetic line of force and horizontal direction angle when type of device A solenoid is placed on the magnetron;
Fig. 6. near the distribution of target face magnetic line of force and horizontal direction angle when type of device A solenoid is placed on the substrate;
Fig. 7. the non-equilibrium degree of magnetron was with the variation of coil current size direction when type of device A solenoid was placed near the magnetron;
Fig. 8. substrate center saturation ion current density and floating potential when type of device A solenoid is placed near the magnetron;
Fig. 9. substrate center saturation ion current density and floating potential when type of device A solenoid is placed near the substrate;
Figure 10. one of type of device B magnetic field configuration distribution schematic diagram (section right half part view);
Figure 11. two (section right half part views) of type of device B magnetic field configuration distribution schematic diagram;
Among the figure, 1 magnetron; 2 targets; 3 outer magnets; 4 center magnets; 5 substrates; 6 solenoids; 7 solenoids.
Embodiment
Further describe below in conjunction with drawings and Examples:
Apparatus of the present invention type A internal vacuum chamber divides the device diagrammatic cross-section as shown in Figure 1: magnetic controlled tube sputtering apparatus comprises magnetron 1 and solenoid 6, and magnetron 1 comprises target 2, center magnet 4 and outer magnet 3; Substrate 5 is placed on the opposite of magnetron 1; Solenoid 6 is placed along magnetron 1 central axis, and can move around or fixing to substrate 5 directions.
In the magnetron 1, can be by regulating the relative magnetic flux of center magnet 4, outer magnet 3, magnetron is set to equilibrium state or nonequilibrium state magnetron.Solenoid 6 is round magnetron 1, when solenoid 6 passes to electric current, excite produce one with magnetron 1 co-axial complementary field (field intensity arrives in hundreds of Gauss's the scope tens usually).When the polar phase of the center magnet 4 of the direction of complementary field and magnetron 1 simultaneously, before magnetic line of force trends towards closing at target 2, magnetron 1 attitude that tends to be balanced, otherwise, the polar phase of outer magnet 3 simultaneously in the direction of complementary field and magnetron 1, magnetic line of force trends towards dispersing, and the part magnetic line of force diffuses to substrate region, magnetron 1 trend nonequilibrium state.It is exactly can be easily simply according to the plated film needs that the present invention adopts an advantage of solenoid 6, only need by changing solenoid 6 size of current or direction, the non-equilibrium degree of adjusting magnetron 1 that just can be real-time (as shown in Figure 7, wherein, be incorporated herein non-equilibrium COEFFICIENT K how much in order to weigh the non-equilibrium degree of magnetron
GMeasure promptly: K
G=2Z
0/ W, wherein, Z
0Be the distance of magnetic field zero to magnet (magnet) upper surface, W is a distance between the two peripheral magnets), also promptly change the intensity (as Fig. 8 or 9) of the suffered plasma bombardment of substrate region.As can be seen from Figure 7 can be by regulating the magnetron (pass to different coil current correspondences and different non-equilibrium degree) that current parameters obtains required non-equilibrium degree easily.Regulate the saturation ion current density (being ionic flux) add the solenoid current change substrate place of can quite on a large scale in, (striding an order of magnitude) in addition, and substrate suspension voltage changes (being no more than 15V in the sample result) among a small circle simultaneously, also can keep low energy ion energy bombardment (shown in Fig. 8,9).
In addition, the position difference that solenoid 6 is placed is also different to the magnetic field configuration distribution influence in target 2 or substrate 5 zones.The decay of magneticstrength that the magnetron inner magnet is produced is very fast, substrate region outside several centimetres of distance target surfaces, and field intensity has only several Gausses, is difficult to ion motion is produced considerable influence.In the time of near solenoid 6 is placed on magnetron 1, (magnetron of anticipating shown in the figure is the circular flat magnetron, axisymmetricly as shown in Figure 3, therefore only provide section right half part view, down with), solenoid passes to after the electric current, the field intensity of enhancing substrate region that can be to a certain degree; And when solenoid 6 is placed near the substrate 5, as shown in Figure 4, solenoid passes under the situation of identical magnetizing current, the field intensity of substrate region is compared remarkable enhancing, and more more uniform magnetic line of force pass substrate region, mean that the substrate region plasma density is able to remarkable enhancing.
This point adopts the Langmuir probe measuring result also can confirm from example.Sputtering target material is the ZnAl alloys target in the example, and diameter 80mm, sputtering voltage are 320V, and sputtering power density is about 1.5W/cm
2, target-substrate distance is 7cm.As Fig. 8 is near the change curve of solenoid when being placed on the magnetron.Along with solenoid current is changed to-2A by 0.5A, substrate center place probe (over against the magnetron central position) current density is by～100 μ A/cm
2Rise to～900 μ A/cm
2, having changed about 9 times, substrate suspension voltage also is raised to 23V by 8V simultaneously; Operating pressure is very unobvious to both influences in addition, and saturation ion current and substrate suspension voltage are slightly high when pressure is low.Fig. 9 is near the change curve of solenoid when being placed on the substrate, and along with solenoid current changes, amplitude is identical, is also changed to-2A by 2A, and substrate place probe current density is by～90 μ A/cm
2Rise to～1800 μ A/cm
2Increased about 20 times, the substrate saturation ion current changes and almost is twice when being placed near the magnetron with respect to solenoid, and explanation is the result that the substrate region magnetic field line is more dispersed and magneticstrength is stronger, and this also can find out by the magnetic field magnetic line distribution plan from Fig. 4; Substrate suspension voltage is also changed to the 23V by 5V simultaneously, when solenoid current by 0 be changed to-during 2A, corresponding magnetron is by the transformation of equilibrium state to nonequilibrium state, when being placed near the magnetron with respect to solenoid, the variation of substrate suspension voltage is more slow, this may be since this moment solenoid magnetic field to the littler result's (as shown in Figure 9) of magnetic controlling target face field region influence.Operating pressure is very unobvious to both influences yet in addition, and saturation ion current and substrate suspension voltage are slightly high when pressure is low.Therefore from regulating the angle that changes substrate saturation ion current density significantly, solenoid is fit to be placed near the substrate.It also is to regulate the solenoid position according to the different parameters needs that the present invention adopts an advantage of a transportable solenoid.
The invention allows for a kind of method of utilizing electromagnetic spool device to improve target utilization.In the time of near solenoid 6 is placed on magnetron 1, as shown in Figure 5: in the example when solenoid current when a certain value the between-2A to 2A changes, (correspond to extreme equilibrium attitude magnetron when solenoid current is for 2A in the example, the absolute width of magnetic line of force horizontal zone is about 7mm though the absolute wide variety of magnetic line of force horizontal zone (the magnetic line of force horizontal zone is defined herein as target material surface magnetic line of force and the horizontal direction angle theta scopes less than 20 degree) is very little; Solenoid current corresponds to extreme nonequilibrium state magnetron during for-2A, the absolute width of magnetic line of force horizontal zone is about 6mm), but along with solenoid current changes between-the 2A to 2A, magnetic line of force horizontal zone and target face magnetic field vertical component zero point are horizontal move left and right with respect to target face, magnetic line of force horizontal zone width increases to 10mm from 6mm, increase by 67% approximately, mean that the etching scope also obviously enlarges.We know that it is zero place that lateral etching usually occurs in target face magnetic field vertical component the soonest, therefore change solenoid current/apply and to change target etching deepest point position and etch areas easily by regulating with low frequency ac, (the example medium frequency is a power frequency when solenoid is passed to low frequency ac like this, in the time of 50Hz), quick travel back and forth before the target about the strong plasma body of local of constraint, significantly widen the etching runway, conversion target etching deepest point, with respect to additive method, the simple and effective target utilization that improved.
In addition, along with solenoid 6 moves to substrate 5 along magnetron 1 central shaft, the inhomogeneity variation of target face transverse magnetic field is little, changes solenoid current and can change target face magnetic line of force horizontal zone move left and right scope to a great extent; But the variation solenoid current of equal extent diminishes gradually to the scope that changes target face magnetic line of force horizontal zone move left and right, when solenoid 6 near substrates 5 near the time, with respect near magnetron, target face magnetic line of force horizontal zone obviously dwindles with the scope of low-frequency ac move left and right, as shown in Figure 6.Therefore, from improving the angle of target utilization, it is more suitable that solenoid 6 is placed near the magnetron 1.
In addition, when solenoid leads to the low-frequency ac electric current, change between-the 2A to 2A as electric current, the magnetic line of force horizontal zone is laterally inside and outside back and forth quick travel with respect to target face, the strong plasma body of local that also is constraint before the target is to move back and forth inside and outside laterally, and is more even on horizontal space, enlarging the etching scope like this, when improving target utilization, sedimentary film thickness and performance homogeneity spatially also improves on the substrate.
Apparatus of the present invention type B internal vacuum chamber divides the device diagrammatic cross-section as shown in Figure 2: magnetic controlled tube sputtering apparatus comprises magnetron 1 and a pair of solenoid 6,7, and magnetron 1 comprises target 2, center magnet 4 and outer magnet 3; Substrate 5 is placed on the opposite of magnetron 1; Near a pair of solenoid 6,7 is placed on magnetron and substrate respectively along magnetron 1 central axis.By before described, we know that from improving the angle of target utilization, solenoid 6 leads to goes up low frequency acs, and is fit to be placed near the magnetron 1; From regulating the angle that changes substrate saturation ion current density significantly, solenoid 6 is fit to be placed near the substrate 5.Therefore the present invention proposes another kind of type of device B: adopt a pair of solenoid 6,7, they are positioned over respectively near magnetron 1 and the substrate 5.Solenoid 6 passes to low frequency ac (size of current and frequency can be regulated), and solenoid 7 passes to direct current or low frequency ac (size of current, direction or frequency can change).Like this can be in conjunction with both advantages, both can be when having improved target 2 utilization ratios, the plasma density that also can significantly regulate substrate 5 zones in real time.Figure 10,11 passes to a certain Constant Direct Current electric current when solenoid 7, when solenoid 6 passes to low frequency ac, different time sections target face and substrate region magnetic field configuration distribution schematic diagram, wherein Figure 10 is in nonequilibrium state corresponding to magnetron, and Figure 11 is in equilibrium state corresponding to magnetron.
Claims (6)
1. magnetic controlled tube sputtering apparatus is characterized in that:
Comprise (6) two parts of magnetron (1) and solenoid, described magnetron (1) and solenoid (6) are coaxial staggered relatively;
Described solenoid (6) moves along magnetron (1) medullary ray and is placed on magnetron (1) outside or substrate (5) side or arbitrary position between the two; Regulate the size of current and the direction of solenoid, produce one and the co-axial auxiliary magnetic field of magnetron; The magnetizing current that described solenoid (6) is applied is a low-frequency ac, and low-frequency range is 10-1000Hz, and size of current and frequency can change, and the size of current variation range produces in the 10-500 gaussian intensity solenoid.
2. by the described magnetic controlled tube sputtering apparatus of claim 1, it is characterized in that: described magnetron (1) is equilibrium state magnetron or non-flat attitude magnetron.
3. by the described magnetic controlled tube sputtering apparatus of claim 1, it is characterized in that: described magnetron (1) is circular flat magnetron sputtering target or Rectangular Planar Magnetron Sputtering Target.
4. by the described magnetic controlled tube sputtering apparatus of claim 1, it is characterized in that: described solenoid (6) is circle or rectangle.
5. magnetic controlled tube sputtering apparatus is characterized in that:
Comprise magnetron (1) and two parts of a pair of solenoid (6,7), staggered relatively coaxially to each other;
Solenoid (6) is placed on the magnetron outside along magnetron (1) central axis;
Solenoid (7) is placed on substrate (5) along magnetron (1) central axis and locates, and regulates the size of current and the direction of solenoid (6,7), produces one and the co-axial auxiliary magnetic field of magnetron;
The magnetizing current that the preceding solenoid of described magnetron (1) (6) is applied is a low-frequency ac, and frequency is 10-1000Hz, and size of current and frequency can be regulated; It is direct current or low-frequency ac that substrate (5) is located the magnetizing current that solenoid (7) applied, galvanic current direction and size can be regulated, the size of current variation range produces in the 10-500 gaussian intensity solenoid, low-frequency ac electric current size and frequency can be regulated, frequency is 10-1000Hz, and the size of current variation range produces in the 10-500 gaussian intensity solenoid.
6. by the described magnetic controlled tube sputtering apparatus of claim 5, it is characterized in that: described solenoid (6,7) is circle or rectangle.
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| CN200610155915A CN100596312C (en) | 2006-12-31 | 2006-12-31 | Magnetron sputtering device |
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| CN200610155915A CN100596312C (en) | 2006-12-31 | 2006-12-31 | Magnetron sputtering device |
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| CN100596312C true CN100596312C (en) | 2010-03-31 |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101719457B (en) * | 2009-09-25 | 2012-05-30 | 中国科学院电工研究所 | Superconducting coil-based high-intensity magnetic field magnetic control sputtering cathode |
| CN102650035B (en) * | 2011-02-24 | 2014-03-12 | 海洋王照明科技股份有限公司 | Method for producing silicon doping zinc oxide film, produced film and application thereof |
| CN102181841B (en) * | 2011-05-18 | 2013-04-24 | 应达利电子(深圳)有限公司 | Metal vacuum sputtering device and method |
| CN102226269A (en) * | 2011-06-15 | 2011-10-26 | 星弧涂层科技(苏州工业园区)有限公司 | Magnetic field adjusting device of cathodic arc |
| CN103269555B (en) * | 2013-04-28 | 2016-07-06 | 哈尔滨工业大学 | The system and method for the magnetic field configuration constraint high-temperature plasma of apparatus zero field regions |
| CN105112873A (en) * | 2015-09-22 | 2015-12-02 | 京东方科技集团股份有限公司 | Magnetron sputtering device and magnetron sputtering method |
| CN110257797A (en) * | 2019-07-22 | 2019-09-20 | 上海妙壳新材料科技有限公司 | A kind of device and its application method of hot anode process production high-performance diamond-like |
| CN111172504B (en) * | 2019-12-27 | 2021-11-02 | 季华实验室 | Magnetron sputtering cathode |
| CN111334770B (en) * | 2020-04-07 | 2021-10-22 | 中国科学院近代物理研究所 | Inner wall coating device of arc bending accelerator and magnetron sputtering coating method thereof |
| CN114318269B (en) * | 2022-01-05 | 2022-10-28 | 中国科学院兰州化学物理研究所 | Device and method for sputtering and depositing metal on surface of magnetic powder material |
| CN115181952A (en) * | 2022-08-04 | 2022-10-14 | 浙江景昇薄膜科技有限公司 | Adjustable magnet for coating film on curved surface substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1039070A (en) * | 1988-06-28 | 1990-01-24 | 中国科学院北京真空物理实验室 | Adjustable subtend controlled sputtering source and film coating method thereof |
| WO1995004368A1 (en) * | 1993-07-29 | 1995-02-09 | Institute Of Physics Academy Of Sciences Of The Czech Republic | Method and device for magnetron sputtering |
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2006
- 2006-12-31 CN CN200610155915A patent/CN100596312C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1039070A (en) * | 1988-06-28 | 1990-01-24 | 中国科学院北京真空物理实验室 | Adjustable subtend controlled sputtering source and film coating method thereof |
| WO1995004368A1 (en) * | 1993-07-29 | 1995-02-09 | Institute Of Physics Academy Of Sciences Of The Czech Republic | Method and device for magnetron sputtering |
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