CN1033100C - Magnetically controlled sputtering source with symmetric magnet - Google Patents
Magnetically controlled sputtering source with symmetric magnet Download PDFInfo
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- CN1033100C CN1033100C CN 93111860 CN93111860A CN1033100C CN 1033100 C CN1033100 C CN 1033100C CN 93111860 CN93111860 CN 93111860 CN 93111860 A CN93111860 A CN 93111860A CN 1033100 C CN1033100 C CN 1033100C
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- permanent magnet
- annular permanent
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- sputtering source
- inner annular
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Abstract
The present invention discloses a magnetron sputtering filming source for a thin film making technique, which is characterized in that two external circular permanent magnets of which the magnetic poles are symmetrical and an internal circular permanent magnet form a magnetron sputtering magnetic field; a water cooling sputtering cathode is arranged at the circumference of the internal circular permanent magnet, and a target material is placed on the water cooling sputtering cathode; a cathode shielding cover is arranged between the external circular permanent magnets and the water cooling sputtering cathode; the cathode shielding cover and the lower part of the water cooling sputtering cathode are arranged on an insulating body. The magnetron sputtering filming source not only can implement high sputter deposition speed rate and low basal piece temperature, but also can enhance the target material utilization rate to 64% from 30% of a plane magnetron sputtering source.
Description
The present invention relates to the magnetron sputtering origin system that sputter coating is used in the thin film fabrication technology.
At present, sputter coating is most widely used a kind of thin film fabrication technology.Usually the basic demand to sputter coating is to have high deposition rate, bigger uniform film thickness scope and the high target utilization and the substrate of low temperature.
Early stage sputtering film coating method is direct current diode sputtering and radio-frequency sputtering.The shortcoming of this method is: sputter rate is lower; Substrate is subjected to the strong bombardment of high-energy electron, and temperature rise is bigger.Therefore, often can not satisfy actual needs.The planar magnetic control sputtering method that grows up on this basis, its sputtering source (see figure 1) mainly is by an outside annular permanent magnet 1 and garden, center cylindricality permanent magnet 3 and permanent magnet bottom yoke 9 and sputter material (target) 6 formations, during plated film substrate 7 is placed the top of target surface.Because the magnetic field of this sputtering source magnetron sputtering is produced by center cylindricality permanent magnet and outer annular magnets, near target surface, magneticstrength is
Half garden shape distributes.A large amount of high-energy electrons will be by this magnetically confined, and mainly concentrates on
The equilibrium theory of tide, top near, thereby realize high sputter rate and low substrate temperature, be to use at present wider a kind of sputtering film coating method.Yet carry out sputter coating with this sputtering source, can cause the narrow V-arrangement etching of target material usually,, by volume calculate the utilization ratio of target material and only have only about 30% of target as dash area among Fig. 1.The major cause that causes target V-type etching is because in planar magnetic control sputtering, high-energy electron is produced a narrow annular region by near the balance magnetic field position of magnetically confined target surface.In addition, find also that after deliberation the etching shape of target directly affects the homogeneity that film thickness distributes, the inhomogeneous etching of target will cause relatively little film thickness homogeneity range, influence the coating quality of film.
The objective of the invention is deficiency at above-mentioned sputter coating sputtering source, in order to obtain high deposition rate and low substrate temperature, improve the homogeneity of target etching and obtain relatively large film thickness homogeneity range, design a kind of controlled sputtering source with symmetrical magnet.
One aspect of the present invention is according to electromagnetic theory: the charged particle that moves in magnetic field will be subjected to a Lorentz force
(wherein:
Be magnetic intensity vector,
Be the particle movement velocity vector of carried charge q, F is the Lorentz force vector), obviously the magnetic field of visible parallel target surface plays decisive role for the constraint high-energy electron.Have additivity according to static magnetic field on the other hand, and the theoretical design that proposes a kind of new controlled sputtering source of geseous discharge.Symmetrical magnet controlled sputtering source of the present invention is by permanent magnet, cathode shield, water-cooled sputter cathode and isolator constitute, it is characterized in that permanent magnet adopts two symmetric outside annular permanent magnets 1 of magnetic pole, 2 and inner annular permanent magnets 3, the water-cooled sputter cathode 5 that is peripherally equipped with at inner annular permanent magnet 3, and on it, lay target 6, at permanent magnet 1,2 and water-cooled sputter cathode 5 between the cathode shield 4 of ground connection is installed, a foraminous isolator 8 is installed in lower end at cathode shield 4 and water-cooled sputter cathode 5, and makes its hole and the corresponding (see figure 2) of interior annular distance of inner annular permanent magnet 3.
Further specify the present invention below in conjunction with accompanying drawing 2-accompanying drawing 8 by embodiment.
Fig. 1: the plane magnetically controlled sputtering source of prior art
1-outside annular permanent magnet wherein, 3-interior permanent magnet, 6-target, 7-substrate, 9-yoke.
Fig. 2: the present invention's symmetry controlled sputtering source
Wherein: 1,2-outside circular symmetric permanent magnet; 3-inner annular permanent magnet; 4-cathode shield; 5-water-cooled sputter cathode; 6-target; 7-substrate; 8-isolator.
Fig. 3: the magnetic field distribution figure at the 3mm place, target surface top of the present invention's symmetry magnet controlled sputtering source
Wherein: B
⊥Magnetic field strength component for vertical target surface; B
IJMagnetic field strength component for parallel target surface.
Fig. 4: the impressed voltage of the present invention's symmetry magnet controlled sputtering source and the graph of a relation of discharging current
Fig. 5: the starting voltage of the present invention's symmetry magnet controlled sputtering source and the graph of a relation of sputter gas pressure
Fig. 6: the sputtering power of the present invention's symmetry magnet controlled sputtering source and the graph of a relation of deposition rate
Fig. 7: the target etching sectional view of the present invention's symmetry magnet controlled sputtering source
Fig. 8: the film thickness distribution plan of the present invention's symmetry magnet controlled sputtering source
Now according to symmetrical magnet controlled sputtering source of principle design processing of the present invention.At first select materials is that SmCo (SmCo) magnet or high-coercive force (Hc) neodymium iron boron (NbFeB) are of a size of φ 90 * φ 110 * 25 two an outside annular permanent magnet and an inner annular permanent magnet that is of a size of φ 8 * φ 40 * 20.Its magnetic energy product (BH) is not less than 200 kilojoule/rice
3During installation, when two outside annular permanent magnets 1,2 are that S is extremely relatively the time, then the N utmost point of inner annular permanent magnet 3 makes progress (as shown in Figure 2), when two outside annular permanent magnets 1,2 are that N is extremely relatively the time, then the S utmost point of inner annular permanent magnet 3 makes progress (shown in Fig. 2 bracket), just allows the permanent magnet polarity that produces magnetron sputtering magnetic field dispose by the mode that applies.The water-cooled territory of making the high 30mm of the about 80mm of diameter with the 1Cr18Ni9Ti stainless steel penetrates outside that negative electrode 5 is installed in inner annular permanent magnet 3, be used for water flowing plays cooling effect, selecting thickness δ for use is stainless steel (1Cr18Ni9Ti) the making cathode shield 4 of 0.8mm, it is installed in and two outside annular permanent magnets 1 and 2 at a distance of 2mm and and water-cooled sputter cathode 5 between, and allow its ground connection, water-cooled sputter cathode 5 and cathode shield 4 are installed on the isolator 8, make the hole on the isolator 8 corresponding with the interior annular distance of interior annular permanent magnet 3.During plated film, with substrate 7 place target surface above.
Below the test feature of carrying out with regard to the present invention be described as follows:
1, magnetic field distribution: as seen from Figure 3, during 3mm, because the vertical magnetic field component reduces relatively, horizontal component ofmagnetic field increases magnetic-field component of the present invention relatively above target surface, and therefore, the resultant magnetic field distributes more level and smooth.
2, glow discharge volt-ampere characteristic: as seen from Figure 4, discharging current and impressed voltage are nonlinearities change, about 300 volts of lower voltages, can obtain very big discharging current, and this is typical magnetron sputtering characteristic.
3, starting voltage and sputter gas A
rThe relation that air pressure is strong: as seen from Figure 5, A
rAir pressure is high more by force, and starting voltage is low more.
4, the relation of sputtering power and deposition speed: as seen from Figure 6, work as A
rAir pressure is by force under the condition of 2.67Pa, adopts the Cu target material, the relation that the deposition rate of Cu film is directly proportional with sputtering power.When substrate 7 and Cu target surface 6 at a distance of about 50mm place, below the about 600W of the peak power of this system, the maximum deposition rate of sputtering source be about 11000 /minute.
5, target surface etching situation: use diameter phi 76mm.Thickness is that the copper material of 4mm is made target.The V-arrangement etching phase ratio of the etching section distribution situation of target and plane magnetically controlled sputtering source target as seen from Figure 7, the etch areas of target increases greatly, calculates that by volume the utilization ratio of target is 64%.
6, film thickness distributes: diameter 56mm, and the substrate 7 of thickness δ 1.2mm and target surface 6 are at a distance of the 50mm place, and the variation in thickness of its film is less than ± 5% (as shown in Figure 8).
This shows, the present invention's symmetry magnet controlled sputtering source, owing to adopted two symmetric outside annular permanent magnets of magnetic pole and inner annular permanent magnet, make near the vertical magnetic field component the target surface weaken greatly, simultaneously, the parallel magnetic field component but strengthens greatly, its result makes near the magnetic field the target surface will present comparatively level and smooth distribution, high-energy electron will be constrained near the annular region of the broad of target surface like this, thereby the evenly etching that causes target, the utilization ratio that makes target brings up to about about 64% from about 30% of plane magnetically controlled sputtering source.Reduced tooling cost.In addition, adopt in the process of sputter of the present invention, because high-energy electron is firmly retrained by magnetic field, they go almost can ignore to banging of substrate, and under the condition of the abundant water-cooled of sputtering source, the measured value of substrate temperature is not higher than 70 ℃.So adopt the present invention to carry out thin film fabrication, have high deposition rate, bigger uniform film thickness scope, high target utilization and low temperature substrate.The present invention is a kind of comparatively ideal controlled sputtering source.
Claims (2)
1, a kind of symmetrical magnet controlled sputtering source, be by permanent magnet, cathode shield, water-cooled sputter cathode and isolator constitute, it is characterized in that permanent magnet adopts two symmetric outside annular permanent magnets of magnetic pole (1), (2) and an inner annular permanent magnet (3), be peripherally equipped with a water-cooled sputter cathode (5) at inner annular permanent magnet (3), and on it, lay target (6), annular permanent magnet (1) externally, (2) and the cathode shield (4) of ground connection is installed between the water-cooled sputter cathode (5), a foraminous isolator (8) is installed in lower end at cathode shield (4) and water-cooled sputter cathode (5), and makes its hole corresponding with the interior annular distance of inner annular permanent magnet (3); The mode that the permanent magnet polarity in generation magnetron sputtering magnetic field applies disposes, be when two outside annular permanent magnets (1), (2) for S extremely relatively the time, then the N utmost point of inner annular permanent magnet (3) upwards, when two outside annular permanent magnets (1), (2) are N extremely relatively the time, then the S utmost point of inner annular permanent magnet (3) upwards.
2, controlled sputtering source according to claim 1 is characterized in that the material that outside annular permanent magnet (1), (2) and inner annular permanent magnet (3) adopt is SmCo (SmCo) permanent magnet or high-coercive force neodymium iron boron (NdFeB) permanent magnet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93111860 CN1033100C (en) | 1993-06-22 | 1993-06-22 | Magnetically controlled sputtering source with symmetric magnet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93111860 CN1033100C (en) | 1993-06-22 | 1993-06-22 | Magnetically controlled sputtering source with symmetric magnet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1096825A CN1096825A (en) | 1994-12-28 |
| CN1033100C true CN1033100C (en) | 1996-10-23 |
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ID=4989614
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 93111860 Expired - Fee Related CN1033100C (en) | 1993-06-22 | 1993-06-22 | Magnetically controlled sputtering source with symmetric magnet |
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| CN (1) | CN1033100C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102888590A (en) * | 2012-10-23 | 2013-01-23 | 东莞宏威数码机械有限公司 | Scanning type magnetron sputtering cathode and scanning type magnetron sputtering device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1296514C (en) * | 2003-11-28 | 2007-01-24 | 中国科学院金属研究所 | Magnetron sputtering target capable of improving the availability of target materials |
| CN1778731B (en) * | 2004-11-26 | 2011-02-02 | 鸿富锦精密工业（深圳）有限公司 | Moulded glass mould core, its production and producer thereof |
| JP4531599B2 (en) * | 2005-03-17 | 2010-08-25 | 株式会社アルバック | Sputtering source, sputtering equipment |
| CN103050358A (en) * | 2011-10-17 | 2013-04-17 | 鸿富锦精密工业（深圳）有限公司 | Planar magnetron sputtering cathode |
| CN103290378B (en) * | 2013-05-30 | 2015-09-30 | 江西沃格光电股份有限公司 | Magnetron sputtering plating cathode mechanism |
-
1993
- 1993-06-22 CN CN 93111860 patent/CN1033100C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102888590A (en) * | 2012-10-23 | 2013-01-23 | 东莞宏威数码机械有限公司 | Scanning type magnetron sputtering cathode and scanning type magnetron sputtering device |
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| Publication number | Publication date |
|---|---|
| CN1096825A (en) | 1994-12-28 |
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