CN102360568B - 一种并行异步存储器及其数据读取方法 - Google Patents
一种并行异步存储器及其数据读取方法 Download PDFInfo
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CN102360568A CN102360568A (zh) | 2012-02-22 |
CN102360568B true CN102360568B (zh) | 2014-08-20 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111312319B (zh) * | 2018-12-12 | 2022-03-01 | 北京兆易创新科技股份有限公司 | 一种数据替换的方法以及装置 |
CN111158589B (zh) * | 2019-12-16 | 2023-10-20 | 绿晶半导体科技(北京)有限公司 | 存储阵列的动态管理方法和装置 |
CN111028879B (zh) * | 2019-12-23 | 2023-06-27 | 珠海创飞芯科技有限公司 | 一种可变编程次数的多次可编程存储器 |
CN111968696B (zh) * | 2020-08-27 | 2021-07-06 | 海光信息技术股份有限公司 | 只读存储器电路及其设计方法、只读存储器及电子设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US4757474A (en) * | 1986-01-28 | 1988-07-12 | Fujitsu Limited | Semiconductor memory device having redundancy circuit portion |
US6040999A (en) * | 1996-10-24 | 2000-03-21 | Sharp Kabushiki Kaisha | Semiconductor memory device |
US6041422A (en) * | 1993-03-19 | 2000-03-21 | Memory Corporation Technology Limited | Fault tolerant memory system |
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US6421284B1 (en) * | 2000-05-26 | 2002-07-16 | Hitachi, Limited | Semiconductor device |
JP2004118896A (ja) * | 2002-09-24 | 2004-04-15 | Renesas Technology Corp | 半導体記憶装置 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US4757474A (en) * | 1986-01-28 | 1988-07-12 | Fujitsu Limited | Semiconductor memory device having redundancy circuit portion |
US6041422A (en) * | 1993-03-19 | 2000-03-21 | Memory Corporation Technology Limited | Fault tolerant memory system |
US6040999A (en) * | 1996-10-24 | 2000-03-21 | Sharp Kabushiki Kaisha | Semiconductor memory device |
Non-Patent Citations (1)
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JP特开2004-118896A 2004.04.15 |
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Address after: 230601 Building 1, Pearl Plaza, Hefei Economic and Technological Development Zone, Anhui Province Patentee after: HEFEI GEYI INTEGRATED CIRCUIT Co.,Ltd. Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 230601 Building 1, Pearl Plaza, Hefei Economic and Technological Development Zone, Anhui Province Patentee before: HEFEI GEYI INTEGRATED CIRCUIT Co.,Ltd. Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |