CN102357930A - Photovoltaic silicon material diamond band saw blade and processing method thereof - Google Patents
Photovoltaic silicon material diamond band saw blade and processing method thereof Download PDFInfo
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- CN102357930A CN102357930A CN2011102376379A CN201110237637A CN102357930A CN 102357930 A CN102357930 A CN 102357930A CN 2011102376379 A CN2011102376379 A CN 2011102376379A CN 201110237637 A CN201110237637 A CN 201110237637A CN 102357930 A CN102357930 A CN 102357930A
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Abstract
The invention provides a photovoltaic silicon material diamond band saw blade and a processing method thereof, wherein the photovoltaic silicon material diamond band saw blade comprises a steel belt basal body, a diamond layer is arranged at the edge of the steel belt basal body, because the diamond layer is arranged at the edge of the steel belt basal body, when cutting is carried out, the silicon material is directly cut through the diamond, no additional grinding materials are required, the operation can be carried out only with water, so the band saw blade is more convenient and more environmentally-friendly to use, and the cutting surface of the silicon material is smoother; and in addition, the diamond layer is arranged on a steel belt, so the abrasive resistance and the tensile strength are improved. The processing is convenient, the operation is more convenient, the processed diamond band saw blade has good adhesive force, the diamond layer is not easy to fall off, so the use service is longer.
Description
Technical field
The present invention relates to a kind of band-saw diamond bar, incisory band-saw diamond bar of particularly a kind of photovoltaic silicon materials and processing method thereof belong to the technical field of silicon materials cutting element.
Background technology
Along with the development of modernization, silicon materials in the application of industry-by-industry more and more widely.Since silicon materials have many metal materials incomparable advantage, therefore, its scope of application has been expanded to industries such as electronics by original building, stone material etc.In the silicon materials process, the cutting technique of silicon materials is extremely important, and it has influenced the quality of silicon materials following process.Traditional silicon materials processing steel wire, steel bands of adopting cut more, in the cutting process, utilize the slurry and the silicon materials friction that have abrasive material, thereby, realize the cutting of silicon materials.The defective that this technology mainly exists is that the saw kerf loss is big, is prone to the damage that causes the silicon materials surface darker, and the silicon materials surface roughness of processing and surface figure accuracy are difficult to control; In addition, in the cutting process, use slurry, operating environment is relatively poor, and the trouble of bringing follow-up slurry to reclaim.
Summary of the invention
Technical problem to be solved by this invention provides a kind of photovoltaic silicon materials band-saw diamond bar and processing method thereof, and this photovoltaic silicon materials band-saw diamond bar tensile strength is high, and cut surface is smooth, need not any lubricant when long service life and cutting, uses environmental protection; In addition, its processing method is easy to operate.
In order to solve the problems of the technologies described above, a kind of photovoltaic silicon materials of the present invention band-saw diamond bar comprises steel strip substrate, and wherein, the edge of said steel strip substrate is provided with diamond layer.
Above-mentioned a kind of photovoltaic silicon materials band-saw diamond bar, wherein, the distribution that said diamond layer is interrupted forms chip area on the diamond layer.
The processing method of above-mentioned photovoltaic silicon materials band-saw diamond bar comprises the steps:
A), select for use stainless steel belt to be processed into steel strip substrate, make the surface roughness of steel strip substrate reach 7 grades, the thickness of steel strip substrate is 0.5-1.2mm;
B), steel strip substrate is carried out preliminary treatment, make the copper strips matrix reach cleannes;
C), to the edge (promptly cutting cutting edge) of steel strip substrate carrying out electronickelling, form nickel dam at the edge of steel strip substrate, steel strip substrate is with 30 rev/mins of rotations;
D), will carry out gold-plated hard rock abrasive material through the steel strip substrate of above-mentioned steps processing and handle, form diamond layer at steel strip substrate, steel strip substrate rotates with 8-10 rev/min of speed, and diamond abrasive is evenly distributed on the steel strip substrate edge;
E), carrying out fine finishining gets final product.
The processing method of above-mentioned photovoltaic silicon materials band-saw diamond bar, wherein, said step d) comprises the steel strip substrate to gold-plated hard rock abrasive material, carries out secondary nickel plating, on the diamond abrasive outer surface, forms the secondary nickel dam.The present invention, directly cuts silicon materials through diamond during cutting because the edge of steel strip substrate is provided with diamond layer; Need not to add in addition abrasive material, as long as be with water to operate, therefore; Use more conveniently, use environmental protection more, and the cut surface of silicon materials is more smooth; In addition, steel band is provided with diamond layer, has improved its wearability and tensile strength; Operation easy to process provided by the invention is more convenient, and the band-saw diamond bar adhesive force of processing is good, and diamond layer is not easy to come off, and service life is longer.
Description of drawings
Fig. 1 is a structural representation of the present invention.
The specific embodiment
Below in conjunction with accompanying drawing the present invention is described further.
In order to solve the problems of the technologies described above, a kind of photovoltaic silicon materials of the present invention band-saw diamond bar comprises steel strip substrate 1, and the edge of said steel strip substrate 1 is provided with diamond layer 2; Diamond layer can be provided with continuously, also can be interrupted setting, in the present embodiment, and the distribution that preferred diamond layer is interrupted; Form chip area 3 on the diamond layer, the present invention, directly cuts silicon materials through diamond during cutting because the edge of steel strip substrate is provided with diamond layer; Need not to add in addition abrasive material, as long as be with water to operate, therefore; Use more conveniently, use environmental protection more, and the cut surface of silicon materials is more smooth; In addition, steel band is provided with diamond layer, has improved its wearability and tensile strength; Operation easy to process provided by the invention is more convenient, and the band-saw diamond bar adhesive force of processing is good, and diamond layer is not easy to come off, and service life is longer.
The processing method of photovoltaic silicon materials band-saw diamond bar comprises the steps:
A), select for use stainless steel belt to be processed into steel strip substrate 1, make the surface roughness of steel strip substrate 1 reach 7 grades, the thickness of steel strip substrate is 0.5-1.2mm;
B), steel strip substrate 1 is carried out preliminary treatment, make copper strips matrix 1 reach cleannes;
C), to the edge (promptly cutting cutting edge) of steel strip substrate 1 carrying out electronickelling, form nickel dam at the edge of steel strip substrate, steel strip substrate 1 is with 30 rev/mins of rotations, the thickness of nickel dam is 2 microns usually;
D), will carry out gold-plated hard rock abrasive material through the steel strip substrate 1 of above-mentioned steps processing and handle, form diamond layer 2 at steel strip substrate 1, steel strip substrate 1 rotates with 8-10 rev/min of speed, and diamond abrasive is evenly distributed on steel strip substrate 1 edge;
E), carrying out fine finishining gets final product.
In order to prolong the service life of diamond layer, diamond layer to be protected, said step d) comprises the steel strip substrate to gold-plated hard rock abrasive material, carries out secondary nickel plating, on the diamond abrasive outer surface, forms the secondary nickel dam.
Those of ordinary skill in the art will be appreciated that; Above embodiment is used for explaining the object of the invention; And be not with opposing qualification of the present invention; As long as in essential scope of the present invention, all will drop in the scope of claim of the present invention variation, the modification of the above embodiment.
Claims (4)
1. a photovoltaic silicon materials band-saw diamond bar comprises steel strip substrate, it is characterized in that the edge of said steel strip substrate is provided with diamond layer.
2. photovoltaic silicon materials band-saw diamond bar as claimed in claim 1 is characterized in that the distribution that said diamond layer is interrupted forms chip area on the diamond layer.
3. the processing method of photovoltaic silicon materials band-saw diamond bar as claimed in claim 1 is characterized in that, comprises the steps:
A), select for use stainless steel belt to be processed into steel strip substrate, make the surface roughness of steel strip substrate reach 7 grades, the thickness of steel strip substrate is 0.5-1.2mm;
B), steel strip substrate is carried out preliminary treatment, make the copper strips matrix reach cleannes;
C), to the edge (promptly cutting cutting edge) of steel strip substrate carrying out electronickelling, form nickel dam at the edge of steel strip substrate, steel strip substrate is with 30 rev/mins of rotations;
D), will carry out gold-plated hard rock abrasive material through the steel strip substrate of above-mentioned steps processing and handle, form diamond layer at steel strip substrate, steel strip substrate rotates with 8-10 rev/min of speed, and diamond abrasive is evenly distributed on the steel strip substrate edge;
E), carrying out fine finishining gets final product.
4. the processing method of photovoltaic silicon materials band-saw diamond bar as claimed in claim 3 is characterized in that said step d) comprises the steel strip substrate to gold-plated hard rock abrasive material, carries out secondary nickel plating, on the diamond abrasive outer surface, forms the secondary nickel dam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102376379A CN102357930A (en) | 2011-08-18 | 2011-08-18 | Photovoltaic silicon material diamond band saw blade and processing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011102376379A CN102357930A (en) | 2011-08-18 | 2011-08-18 | Photovoltaic silicon material diamond band saw blade and processing method thereof |
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| CN102357930A true CN102357930A (en) | 2012-02-22 |
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| CN2011102376379A Pending CN102357930A (en) | 2011-08-18 | 2011-08-18 | Photovoltaic silicon material diamond band saw blade and processing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113118556A (en) * | 2021-04-19 | 2021-07-16 | 江苏美特森切削工具有限公司 | Production equipment for hooked-tooth bimetal band saw blade |
Citations (8)
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| JPH09254146A (en) * | 1996-03-22 | 1997-09-30 | Kenichi Ishikawa | Cutting or grooving method of hard brittle material |
| CN2548789Y (en) * | 2002-06-04 | 2003-05-07 | 俞国连 | Cutter |
| TW200413131A (en) * | 2001-09-10 | 2004-08-01 | Akimichi Koide | Wire tool used for wire saw cutting device, manufacturing method for wire tool and cutting method by wire saw |
| CN1827337A (en) * | 2006-04-06 | 2006-09-06 | 中国地质大学（武汉） | Electroplating hot-pressing diamond saw blade and method for manufacturing same |
| CN1933942A (en) * | 2004-12-28 | 2007-03-21 | 旭金刚石工业株式会社 | Electrodeposition wire tool |
| CN101531035A (en) * | 2009-04-21 | 2009-09-16 | 青岛科技大学 | A method for manufacturing electroplating diamond wire saw |
| CN101602231A (en) * | 2009-06-26 | 2009-12-16 | 江苏锋菱超硬工具有限公司 | The preparation method of electroplating diamond fret saw |
| CN102152416A (en) * | 2011-01-27 | 2011-08-17 | 王楚雯 | Diamond fretsaw and manufacture method thereof |
-
2011
- 2011-08-18 CN CN2011102376379A patent/CN102357930A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09254146A (en) * | 1996-03-22 | 1997-09-30 | Kenichi Ishikawa | Cutting or grooving method of hard brittle material |
| TW200413131A (en) * | 2001-09-10 | 2004-08-01 | Akimichi Koide | Wire tool used for wire saw cutting device, manufacturing method for wire tool and cutting method by wire saw |
| CN2548789Y (en) * | 2002-06-04 | 2003-05-07 | 俞国连 | Cutter |
| CN1933942A (en) * | 2004-12-28 | 2007-03-21 | 旭金刚石工业株式会社 | Electrodeposition wire tool |
| CN1827337A (en) * | 2006-04-06 | 2006-09-06 | 中国地质大学（武汉） | Electroplating hot-pressing diamond saw blade and method for manufacturing same |
| CN101531035A (en) * | 2009-04-21 | 2009-09-16 | 青岛科技大学 | A method for manufacturing electroplating diamond wire saw |
| CN101602231A (en) * | 2009-06-26 | 2009-12-16 | 江苏锋菱超硬工具有限公司 | The preparation method of electroplating diamond fret saw |
| CN102152416A (en) * | 2011-01-27 | 2011-08-17 | 王楚雯 | Diamond fretsaw and manufacture method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113118556A (en) * | 2021-04-19 | 2021-07-16 | 江苏美特森切削工具有限公司 | Production equipment for hooked-tooth bimetal band saw blade |
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Application publication date: 20120222 |