CN102347084A - Adjustment method, adjustment device and test system of reference unit threshold voltage - Google Patents
Adjustment method, adjustment device and test system of reference unit threshold voltage Download PDFInfo
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- CN102347084A CN102347084A CN2010102444812A CN201010244481A CN102347084A CN 102347084 A CN102347084 A CN 102347084A CN 2010102444812 A CN2010102444812 A CN 2010102444812A CN 201010244481 A CN201010244481 A CN 201010244481A CN 102347084 A CN102347084 A CN 102347084A
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Abstract
The invention provides an adjustment method, an adjustment device and a test system of reference unit threshold voltage. The adjustment device comprises a state control machine located in a non-volatile memory chip, a programming device and a verification device. The state control machine comprises a reception module for receiving reference unit information from a test machine, and a control module for controlling the programming device and the verification device to work according to the reference unit information. The programming device is utilized for carrying out programming processes on a current reference unit. The verification device is utilized for carrying out verification processes on the current reference unit and then feeding back a verification result to the state control machine. The state control machine also comprises a determination module which is utilized for determining if the verification result satisfies preset conditions or not, wherein if the verification result satisfies the preset conditions, current adjustment is finished, and if the verification result does not satisfy the preset conditions, the determination module notices the control module so that the control module still controls the current reference unit. The adjustment method, the adjustment device and the test system of reference unit threshold voltage can reduce the time spent on reference unit threshold voltage adjustment.
Description
Technical field
The present invention relates to the semiconductor die testing technical field, particularly relate to a kind of method of adjustment, device and a kind of test macro of reference unit threshold voltage.
Background technology
In order to verify the correctness of nonvolatile memory product, before product export, all can carry out a series of testing process.These nonvolatile memory products can comprise flash memory Flash, EEPROM EEPROM etc.
In the reality, before carrying out logic function test, the test of electric erasing characteristic and procedure code test, need at first the threshold voltage of the reference unit of nonvolatile memory chip to be tested is accurately adjusted.
With SLC (single-bit storage unit; Single Layer Cell) Flash memory is an example, its read-out principle of brief account: storage unit and reference unit are applied identical gate terminal, drain terminal voltage, relatively their drain electrode end electric current; If the current ratio reference unit of storage unit is big; Then be defined as and deposit " 1 ", otherwise, be defined as and deposit " 0 ".Promptly storage unit is deposited " 1 " and deposited defining of " 0 ", see that exactly the threshold voltage of storage unit is lower or high than the threshold voltage of reference unit.Therefore, the threshold voltage of reference unit is the decision-point of storage data, is the basis of entire flash memory read-out system, need before test, compare accurately adjustment.
Threshold voltage adjustment (Threshold Voltage Trimming) refers to reference unit is programmed, and makes its threshold voltage V
THSatisfy the requirement of System Performance Evaluation Corporation.With reference to Fig. 1, the method for adjustment of existing reference unit threshold voltage generally includes:
Wherein, said completion condition can for: measure electric current less than the target reference value.
Said method need repeat programming step 101 and checking procedure 102, measures electric current until checking procedure 102 and meets the completion condition.
But when between programming step 101 and checking procedure 102, switching, tester table need carry out frequent following electricity and power on switching at every turn; For example, to 101 times electric pulses of programming step, and; Power on to checking procedure 102, perhaps, to checking procedure 102 times; And to electric pulse or the like on the programming step 101, these electric down times that need usually to spend the ms order of magnitude with the switching that powers on just can make the required voltage of tester table settle out; Especially when the number (for example, 64,128) of nonvolatile memory chip internal reference unit was many, said switching more can cause the threshold voltage increase of adjustment time, causes the test duration to extend greatly, and testing cost increases sharply.
In a word, need the urgent technical matters that solves of those skilled in the art to be exactly at present: the test duration how can reduce the nonvolatile memory chip, the adjustment time of especially reducing the reference unit threshold voltage.
Summary of the invention
Technical matters to be solved by this invention provides a kind of method of adjustment, device and a kind of test macro of reference unit threshold voltage, can shorten the time of adjustment reference unit threshold voltage greatly, reduces testing cost.
In order to address the above problem, the invention discloses a kind of adjusting gear of reference unit threshold voltage, comprise the control state machine, programmer and the calibration equipment that are positioned at the nonvolatile memory chip internal; Wherein,
Said control state machine comprises:
Receiver module is used to receive the reference unit information from tester table; And
Control module is used for controlling said programmer and calibration equipment work according to said reference unit information;
Said programmer is used for current reference unit is carried out programming operation;
Said calibration equipment is used for current reference unit is carried out verification operation, and check results is fed back to said control state machine;
Said control state machine also comprises:
Judge module is used to judge whether said check results meets prerequisite, if, then finish the adjustment of current reference unit, otherwise, notify said control module, current reference unit is continued executivecontrol function.
Preferably, said programmer comprises a plurality of first Enable Pins, and said calibration equipment comprises a plurality of second Enable Pins;
Said control module is used for controlling said programmer work according to said reference unit information through said first Enable Pin, and, control said calibration equipment work through said second Enable Pin.
Preferably, said device also comprises: the external reference input channel is used to produce target current;
Said calibration equipment is used to measure the electric current of current reference unit, judges and whether should measure electric current less than said target current, and judged result is fed back to said control state machine as check results;
Said prerequisite is that said check results is true.
Preferably, said receiver module also is used to receive the reference unit status poll information from tester table;
Said control state machine also comprises:
The state output module is used for exporting the adjustment state of corresponding reference unit according to reference unit status poll information.
Preferably, said adjustment state comprises: operation, EO and operation failure.
On the other hand, the invention also discloses a kind of test macro, comprise tester table, and the adjusting gear of aforesaid reference unit threshold voltage;
Wherein, said tester table is used for the reference unit information of nonvolatile memory chip is sent to said receiver module.
On the other hand, the invention also discloses a kind of method of adjustment of reference unit threshold voltage, said method is carried out at the nonvolatile memory chip internal, comprising:
Reception is from the reference unit information of tester table;
According to said reference unit information, produce first control signal and second control signal;
According to said first control signal, current reference unit is carried out programming operation;
According to said second control signal, current reference unit is carried out verification operation, obtain check results;
Judge whether said check results meets prerequisite, if then current reference unit adjustment finishes, otherwise, current reference unit is continued to carry out programming operation.
Preferably, said first control signal is first enable signal, and said second control signal is second enable signal.
Preferably, said method also comprises:
Receive the target current of outside input;
Said checking procedure does, measures the electric current of current reference unit, judge and whether should measure electric current less than said target current, with this judged result as check results;
Said prerequisite is that said check results is true.
Preferably, said method also comprises:
Reception is from the reference unit status poll information of tester table;
According to reference unit status poll information, export the adjustment state of corresponding reference unit.
Preferably, said adjustment state comprises: operation, EO and operation failure.
Compared with prior art, the present invention has the following advantages:
The present invention carries out the adjustment of reference unit threshold voltage at the nonvolatile memory chip internal, particularly, only needs multiplexing chip inner potential pulse and voltage, gets final product control chip inner programmer and calibration equipment operate as normal; And the following electricity of chip internal voltage only needs the switching time of the μ s order of magnitude to powering on; Can provide tester table with stable voltage; Thereby with respect to switching time of the ms order of magnitude of prior art, the present invention can reduce the adjustment time of reference unit threshold voltage greatly;
Moreover; With respect to the limitation of a TCH test channel of prior art, the reference unit in can only an a pair of chip carries out the serial adjustment, and the present invention need not chip and outside TCH test channel; Can be at the nonvolatile memory chip internal to the adjustment that walks abreast of a plurality of reference units; Thereby, can further reduce the whole time of reference unit test in the chip, thereby reduce testing cost.
Description of drawings
Fig. 1 is the method for adjustment process flow diagram of a kind of reference unit threshold voltage of prior art;
Fig. 2 is the structural drawing of the adjusting gear embodiment of a kind of reference unit threshold voltage of the present invention;
Fig. 3 is the adjusting gear example of a kind of reference unit threshold voltage of the present invention;
Fig. 4 is the structural drawing of a kind of test macro embodiment of the present invention;
Fig. 5 is the process flow diagram of the method for adjustment embodiment of a kind of reference unit threshold voltage of the present invention.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, below in conjunction with accompanying drawing and embodiment the present invention done further detailed explanation.
One of core idea of the embodiment of the invention is, carries out the adjustment of reference unit threshold voltage at the nonvolatile memory chip internal; Because the following electricity of nonvolatile memory chip internal voltage only needs the time of the μ s order of magnitude to powering on, and can provide tester table with stable voltage, thereby can reduce the adjustment time of reference unit threshold voltage.
With reference to Fig. 2, show the structural drawing of the adjusting gear embodiment of a kind of reference unit threshold voltage of the present invention, specifically can comprise the control state machine 201, programmer 202 and the calibration equipment 203 that are positioned at the nonvolatile memory chip internal; Wherein,
Said control state machine 201 specifically can comprise:
Said programmer 202 is used for current reference unit is carried out programming operation;
Said calibration equipment 203 is used for current reference unit is carried out verification operation, and check results is fed back to said control state machine;
Said control state machine 201 can also comprise:
Adjusting gear of the present invention can be applied in the test process of various nonvolatile memory chips, for example, the Flash chip, eeprom chips etc. are that example describes with the Flash chip only below, other nonvolatile memory chip is please with reference to getting final product.
In reality, the user can pass through tester table, imports said reference unit information with the form of instruction; Suppose to comprise 128 reference units in the current Flash chip, numbering is respectively: 0,1,2; ..., 127, can be the combination in any of above-mentioned reference cell number in the then said reference unit information; For example, { reference unit 0}, { reference unit 0, reference unit 50; Reference unit 100} etc., wherein, the content in the set symbol { } is represented said reference unit information.
Among the present invention, said control state machine 201 mainly contains two functions, and the one, the tester table interface function receives the reference unit information from tester table; The 2nd, control function, also promptly, according to said reference unit information.Control programming device 202 and calibration equipment 203 work are accomplished the adjustment of reference unit threshold voltage automatically.
Particularly, all operations that said control state machine 201 can control programming device 202, and, all operations of calibration equipment 203.
In concrete the realization, can realize above-mentioned control based on enable signal; For example, in said programmer 202, be provided with a plurality of first and enable (Enable) end A, wherein, the corresponding programming operation of each first Enable Pin A; Like this, for this first Enable Pin A, when it is effective, promptly be to start corresponding programming operation, when it is invalid, promptly be to finish corresponding programming operation; Therefore, control module 212 can be through the first all Enable Pin A of control, with all operations of control programming device 202.
In like manner, also a plurality of second Enable Pin B can be set in said calibration equipment 203, wherein, the corresponding verification operation of each second Enable Pin B; Control module 212 can be through the second all Enable Pin B of control, with all operations of control calibration equipment 203.
For making those skilled in the art understand the present invention better, below, specifically can comprise through concrete example description adjustment process of the present invention:
Reference unit information { the reference unit 0} that step S1, receiver module 211 receive from tester table;
In reality, can adopt address bit to represent reference unit in the Flash chip, for example, adopt 7 bit data to represent 128 reference units, adopt 6 bit data to represent 64 reference units, or the like; Like this, said programmer 202 can be learnt operand according to concrete address bit with calibration equipment 203.
Step S2, the said programmer 202 of control module 212 controls carry out programming operation to reference unit 0;
For instance; When starting said programming operation, control module 212 can be through effective first Enable Pin A1, and making the drain electrode end (drain) of 202 pairs of reference units of programmer apply amplitude is that 4V, width are the potential pulse of 2 μ s; And; Through effective first Enable Pin A2, to making the gate terminal (gate) of 202 pairs of reference units of programmer apply the voltage of 9.5V, or the like.
When finishing said programming operation, control module 212 can be turn-offed the voltage of drain electrode end through the invalid first Enable Pin A1, and, through the invalid first Enable Pin A2, make the voltage of gate terminal become 0, or the like.
Step S3, the said calibration equipment 203 of control module 212 controls carry out verification operation to reference unit 0, and check results is fed back to said control state machine;
For instance; When starting whole verification operation, control module 212 can make the drain electrode end of 203 pairs of reference units of calibration equipment apply 1V voltage through effective second Enable Pin B1; And; Through effective second Enable Pin B2, to making the gate terminal of 203 pairs of reference units of calibration equipment apply the voltage of 7V, or the like.
During switching between step, step S2 relates to the following of voltage: drain electrode end 4V → 0, gate terminal 9.5V → 0; Step S3 relates to powering on of voltage: drain electrode end 0 → 1V, gate terminal 0 → 7V; Wherein, the change procedure of symbol → representative voltage.
Because chip internal has potential pulse and voltage,, can make programmer 202 and calibration equipment 203 operate as normal so the present invention only needs multiplexing these potential pulses and voltage; And the following electricity of chip internal voltage only needs the time of the μ s order of magnitude to powering on; Can provide tester table with stable voltage; Thereby with respect to switching time of the ms order of magnitude of prior art, the present invention can reduce the adjustment time of reference unit threshold voltage greatly.
After the drain electrode end of 203 pairs of reference units of calibration equipment and gate terminal apply voltage, the course of work of said calibration equipment 203 can for, measure the electric current of current reference unit, judge and should measure electric current I
RefWhether less than target current I
TH, and judged result fed back to said control state machine as check results; Also promptly, said in such cases check results can comprise: true and pseudo-.
With reference to Fig. 3, in a kind of example of the present invention, said target current I
THCan externally-originated with reference to input channel 3A, also promptly, external reference input channel 3A connects the input end of calibration equipment 203.
Step S4, judge module 213 judge whether said check results meets prerequisite, if, then finish the adjustment of current reference unit, otherwise, notify said control module 212, current reference unit is continued executivecontrol function.
Example is a true time in said check results on the correspondence, meets prerequisite, and control state machine 201 can finish the adjustment of current reference unit; In said check results is fictitious time, then continues said programmer 202 of control and calibration equipment 203, carries out work to current reference unit.
In a kind of preferred embodiment of the present invention, when there is demand in the user to the adjustment state of certain reference unit, can also send query statement to the Flash chip through tester table.
For example, when said query statement was reference unit status poll information, said receiver module 211 also can be used for receiving the reference unit status poll information from tester table;
At this moment, said control state machine 201 can also comprise:
The state output module is used for exporting the adjustment state of corresponding reference unit according to reference unit status poll information.
In reality, said state output module can adopt the various adjustment states of certain reference unit of output valve combination expression of data bit, for example; 00 representative is operated; 01 represents EO, and 10 represent operation failure etc.; And tester table can obtain these adjustment states through read operation, and the present invention does not limit the concrete way of output.
With reference to Fig. 4, show the embodiment of a kind of test macro of the present invention, specifically can comprise:
The adjusting gear 404 of reference unit threshold voltage, it is positioned at chip to be tested 403 inside;
Wherein, said tester table 402 can send test instruction to chip 403 to be measured through probe station 401, and said test instruction can comprise reference unit information etc.;
Further, the adjusting gear 404 of said reference unit threshold voltage specifically can comprise: control state machine 4041, programmer 4042 and calibration equipment 4043;
Wherein, said control state machine 4041 specifically can comprise:
Said programmer 4042 is used for current reference unit is carried out programming operation;
Said calibration equipment 4043 is used for current reference unit is carried out verification operation, and check results is fed back to said control state machine;
Said control state machine 4041 can also comprise:
In reality, said chip 403 to be tested can be nonvolatile memory chips such as Flash chip, eeprom chip.
Concrete, said programmer 4042 can comprise a plurality of first Enable Pins, said calibration equipment 4043 can comprise a plurality of second Enable Pins;
At this moment, said control module 40412 then can be used for according to said reference unit information, controls said programmer 4042 work through said first Enable Pin, and, control said calibration equipment 4043 work through said second Enable Pin.
Preferably, the adjusting gear 404 of said reference unit threshold voltage can also comprise: the external reference input channel is used to produce target current;
Correspondingly, said calibration equipment 4043 then is used to measure the electric current of current reference unit, judges and whether should measure electric current less than said target current, and judged result is fed back to said control state machine as check results;
The prerequisite of this moment is that said check results is true.
When there is demand in the user to the adjustment state of certain reference unit; Can also pass through the transmission query statement of tester table 402, and the adjusting gear 404 of the reference unit threshold voltage in the chip to be measured 403 can feed back corresponding operational status information to tester table 402: operation, EO and operation failure or the like to chip 403 to be measured.
For example, when said query statement was reference unit status poll information, said receiver module 40411 also can be used for receiving the reference unit status poll information from tester table 402;
At this moment, said control state machine 4041 can also comprise:
The state output module is used for exporting the adjustment state of corresponding reference unit according to said reference unit status poll information.
Embodiment is corresponding with aforementioned means, the invention also discloses a kind of method of adjustment of reference unit threshold voltage, and said method is carried out at the nonvolatile memory chip internal, with reference to Fig. 5, specifically can comprise:
In reality, said first control signal should be able to be controlled various programming operations, particularly, can adopt first enable signal to enable various programming operations; In like manner, can adopt second enable signal to enable various verification operation.
In a kind of preferred embodiment of the present invention, said method of adjustment can also comprise the steps:
Receive the target current of outside input;
At this moment, the implementation of said step 504 can for, measure the electric current of current reference unit, judge and whether should measure electric current less than said target current, with this judged result as check results;
Prerequisite in the said step 505 then can for, said check results is true.
To the demand of user to the adjustment state of certain reference unit, in another kind of preferred embodiment of the present invention, said method of adjustment can also comprise:
Reception is from the reference unit status poll information of tester table;
According to reference unit status poll information, export the adjustment state of corresponding reference unit.
Wherein, said adjustment state can comprise: operation, EO and operation failure, or the like.
The present invention has following advantage:
1, carries out the adjustment of reference unit threshold voltage at the nonvolatile memory chip internal; Because the following electricity of nonvolatile memory chip internal voltage only needs the time of the μ s order of magnitude to powering on, and can provide tester table with stable voltage, thereby can reduce the adjustment time of reference unit threshold voltage.
2, owing to have only a TCH test channel on a nonvolatile memory chip; The reference unit of prior art in can only an a pair of chip carries out the serial adjustment; And the present invention need not chip and outside TCH test channel; Can adjust concurrently a plurality of reference units at the nonvolatile memory chip internal, thereby, the whole time that can further reduce reference unit test in the chip.
Each embodiment in this instructions all adopts the mode of going forward one by one to describe, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.For method embodiment, because it is similar basically with device embodiment, so description is fairly simple, relevant part gets final product referring to the part explanation of device embodiment.
More than to method of adjustment, device and a kind of test macro of a kind of reference unit threshold voltage provided by the present invention; Carried out detailed introduction; Used concrete example among this paper principle of the present invention and embodiment are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, the part that on embodiment and range of application, all can change, in sum, this description should not be construed as limitation of the present invention.
Claims (11)
1. the adjusting gear of a reference unit threshold voltage is characterized in that, comprises the control state machine, programmer and the calibration equipment that are positioned at the nonvolatile memory chip internal; Wherein,
Said control state machine comprises:
Receiver module is used to receive the reference unit information from tester table; And
Control module is used for controlling said programmer and calibration equipment work according to said reference unit information;
Said programmer is used for current reference unit is carried out programming operation;
Said calibration equipment is used for current reference unit is carried out verification operation, and check results is fed back to said control state machine;
Said control state machine also comprises:
Judge module is used to judge whether said check results meets prerequisite, if, then finish the adjustment of current reference unit, otherwise, notify said control module, current reference unit is continued executivecontrol function.
2. device as claimed in claim 1 is characterized in that, said programmer comprises a plurality of first Enable Pins, and said calibration equipment comprises a plurality of second Enable Pins;
Said control module is used for controlling said programmer work according to said reference unit information through said first Enable Pin, and, control said calibration equipment work through said second Enable Pin.
3. according to claim 1 or claim 2 device, also comprise: the external reference input channel is used to produce target current;
Said calibration equipment is used to measure the electric current of current reference unit, judges and whether should measure electric current less than said target current, and judged result is fed back to said control state machine as check results;
Said prerequisite is that said check results is true.
4. according to claim 1 or claim 2 device is characterized in that said receiver module also is used to receive the reference unit status poll information from tester table;
Said control state machine also comprises:
The state output module is used for exporting the adjustment state of corresponding reference unit according to reference unit status poll information.
5. device as claimed in claim 4 is characterized in that, said adjustment state comprises: operation, EO and operation failure.
6. a test macro is characterized in that, comprises tester table, and the adjusting gear of each described reference unit threshold voltage in aforementioned 1 to 2;
Wherein, said tester table is used for the reference unit information of nonvolatile memory chip is sent to said receiver module.
7. the method for adjustment of a reference unit threshold voltage is characterized in that, said method is carried out at the nonvolatile memory chip internal, comprising:
Reception is from the reference unit information of tester table;
According to said reference unit information, produce first control signal and second control signal;
According to said first control signal, current reference unit is carried out programming operation;
According to said second control signal, current reference unit is carried out verification operation, obtain check results;
Judge whether said check results meets prerequisite, if then current reference unit adjustment finishes, otherwise, current reference unit is continued to carry out programming operation.
8. method as claimed in claim 7 is characterized in that, said first control signal is first enable signal, and said second control signal is second enable signal.
9. like claim 7 or 8 described methods, it is characterized in that, also comprise:
Receive the target current of outside input;
Said checking procedure does, measures the electric current of current reference unit, judge and whether should measure electric current less than said target current, with this judged result as check results;
Said prerequisite is that said check results is true.
10. like claim 7 or 8 described methods, it is characterized in that, also comprise:
Reception is from the reference unit status poll information of tester table;
According to reference unit status poll information, export the adjustment state of corresponding reference unit.
11. method as claimed in claim 10 is characterized in that, said adjustment state comprises: operation, EO and operation failure.
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| JPH0629494A (en) * | 1990-11-30 | 1994-02-04 | Intel Corp | Circuit and method for confirmation of write state of flash memory device |
| EP0833348A1 (en) * | 1996-09-30 | 1998-04-01 | STMicroelectronics S.r.l. | Method and circuit for checking multilevel programming of floating-gate nonvolatile memory cells, particlarly flash cells |
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Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |