CN102347084B - Adjustment method, adjustment device and test system of reference unit threshold voltage - Google Patents

Adjustment method, adjustment device and test system of reference unit threshold voltage Download PDF

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CN102347084B
CN102347084B CN 201010244481 CN201010244481A CN102347084B CN 102347084 B CN102347084 B CN 102347084B CN 201010244481 CN201010244481 CN 201010244481 CN 201010244481 A CN201010244481 A CN 201010244481A CN 102347084 B CN102347084 B CN 102347084B
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reference cell
current
means
reference
control
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CN102347084A (en
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苏志强
舒清明
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北京兆易创新科技股份有限公司
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Abstract

本发明提供了一种参考单元阈值电压的调整方法、装置和测试系统,其中的方法具体包括位于非易失存储器芯片内部的控制状态机、编程装置和校验装置;其中,所述控制状态机,包括:接收模块,用于接收来自测试机台的参考单元信息;控制模块,用于根据所述参考单元信息,控制所述编程装置和校验装置工作;所述编程装置,用于对当前参考单元进行编程操作;所述校验装置,用于对当前参考单元进行校验操作,并将校验结果反馈给所述控制状态机;所述控制状态机还包括:判断模块,用于判断所述校验结果是否符合预置条件,若是,则结束当前调整,否则,通知所述控制模块,对当前参考单元继续执行控制操作。 The present invention provides a method for adjusting the reference cell threshold voltages, and means testing system, wherein the method specifically includes a non-volatile memory chip control state machine, the programming device and the checking means; wherein the control state machine , comprising: a receiving module for receiving the reference cell information from the test station; and a control module configured according to the reference cell information, controlling the checking means and the working programming means; said programming means, for the current reference cell program operation; the check means for checking a current reference operate unit, and the check result to the control state machine; the control state machine further comprises: determining means for determining the check result meets a preset condition, and if yes, ending the current adjustment, otherwise, notifying the control module controls the operation of the reference cell current continues. 本发明用以降低调整参考单元阈值电压的时间。 Adjusting the reference time to reduce the threshold voltage of the cell of the present invention.

Description

参考单元阈值电压的调整方法、装置和测试系统技术领域 BACKGROUND adjust the reference cell threshold voltages, devices and test systems

[0001] 本发明涉及半导体芯片测试技术领域,特别是涉及一种参考单元阈值电压的调整方法、装置和一种测试系统。 [0001] The present invention relates to a technical field of semiconductor chip testing, and particularly to a method of adjusting the threshold voltage of the cell, and means for testing the reference system.

背景技术 Background technique

[0002] 为了验证非易失存储器产品的正确性,在产品出厂前均会进行一连串的测试流程。 [0002] In order to verify the correctness of the non-volatile memory products, the products manufactured before will carry out a series of test procedures. 这些非易失存储器产品可以包括快闪存储器Flash,电可擦可编程只读存储器EEPROM The nonvolatile memory may comprise a flash memory products Flash, an electrically erasable programmable read-only memory (EEPROM)

坐寸ο Sit inch ο

[0003] 实际中,在进行逻辑功能测试、电擦除特性测试和程序码测试之前,需要首先对待测试非易失存储器芯片的参考单元的阈值电压进行精确调整。 Before [0003] In practice, performing the logical function test, the electrical characteristic test and the erase test program code, need to treat the threshold voltage of the nonvolatile memory chip test reference cells be accurately adjusted.

[0004] 以SLC (单比特存储单兀,Single Layer Cell) Flash memory为例,简单介绍其读出原理:对存储单元与参考单元施加相同的栅极端、漏极端电压,比较它们的漏极端电流,如果存储单元的电流比参考单元大,则定义为存“1”,反之,定义为存“O”。 [0004] In the SLC (single-bit storage unit Wu, Single Layer Cell) Flash memory as an example, briefly describes the principle of reading out: applying the same gate terminal of the memory cells and a reference cell, a drain terminal voltage, a drain terminal of the current comparison thereof If the memory cell current is larger than the reference cell, the memory is defined as "1", on the contrary, is defined as a deposit "O". 即对存储单元存“I”和存“O”的界定,就是看存储单元的阈值电压比参考单元的阈值电压低或高。 I.e., kept define "I" and save "O" of the memory cell, it is to see the high threshold voltage or lower than the threshold voltage of the reference memory cell unit. 因此,参考单元的阈值电压是存储数据的判定点,是整个Flash memory读出系统的基础,需要在测试之前进行比较精确地调整。 Thus, the threshold voltage of the reference cell storing data point is determined, the entire Flash memory is read out based system, the need for more precise adjustment of prior tests.

[0005] 阈值电压调整(Threshold Voltage Trimming)指的是对参考单元进行编程,使其阈值电压Vth满足系统性能评估测试的要求。 [0005] Threshold voltage adjustment (Threshold Voltage Trimming) refers to the reference cell is programmed so that the threshold voltage Vth satisfy the requirements of performance evaluation tests. 参照图1,现有参考单元阈值电压的调整方法通常包括:`[0006] 编程步骤101、对参考单元进行编程(PiOgram)操作; Referring to FIG 1, the conventional method for adjusting the reference cell threshold voltage generally comprise: `[0006] programming step 101, the reference cells are programmed (PiOgram) operation;

[0007] 校验步骤102、测量该参考单元的电流,并判断该电流是否符合完成条件,若是,则调整完成,否则,返回编程步骤101。 [0007] The verification step 102, the reference current measuring unit, and determines whether the completion condition of the current, and if yes, the adjustment is completed, otherwise, the program returns to step 101.

[0008] 其中,所述完成条件可以为:测量电流小于目标参考值。 [0008] wherein said completion condition may be: the target measured current is less than the reference value.

[0009] 上述方法需要重复执行编程步骤101和校验步骤102,直至校验步骤102测量电流符合完成条件。 [0009] The above-described method steps need to repeat the programming verification steps 101 and 102 until the check in step 102 measures the current meet completion condition.

[0010] 但是,每次在编程步骤101和校验步骤102之间进行切换时,测试机台需要进行频繁的下电和上电切换,例如,针对编程步骤101下电脉冲,以及,针对校验步骤102上电,或者,针对校验步骤102下电,以及,针对编程步骤101上电脉冲等等,这些下电和上电切换通常需要花费ms数量级的时间才能使测试机台所需的电压稳定下来;尤其在非易失存储器芯片内部参考单元的数目(例如,64,128)比较多时,所述切换更会导致阈值电压调整时间的增加,造成测试时间大大加长,测试成本激增。 [0010] However, each time the switching between steps 101 and 102 programming verification steps, require frequent testing apparatus and the power-off power switch, for example, the electrical pulse against a program step 101, and, for correction inspection step 102 is powered on, or the check in step 102 for electricity, and, for the electrical pulse, etc. on the programming step 101, the power down and power-switching usually takes the order of ms time required to make the testing machine voltage stabilized; the number of the non-volatile memory chips, especially the internal reference unit (e.g., 64, 128) relatively long time, will lead to an increase the switching threshold voltage adjustment time, resulting in much longer test time, the test cost surge.

[0011] 总之,目前需要本领域技术人员迫切解决的一个技术问题就是:如何能够降低非易失存储器芯片的测试时间,尤其是降低参考单元阈值电压的调整时间。 [0011] In summary, the current urgent need in the art the art that a technical problem to be solved: how to reduce test time non-volatile memory chip, in particular to reduce the time to adjust the reference cell threshold voltage.

发明内容 SUMMARY

[0012] 本发明所要解决的技术问题是提供一种参考单元阈值电压的调整方法、装置和一种测试系统,能够大大缩短调整参考单元阈值电压的时间,降低测试成本。 [0012] The present invention solves the technical problem of providing a reference cell threshold voltage adjusting method, apparatus and a test system capable of greatly reducing the cell threshold voltage adjustment reference time, reduce testing costs.

[0013] 为了解决上述问题,本发明公开了一种参考单元阈值电压的调整装置,包括位于非易失存储器芯片内部的控制状态机、编程装置和校验装置;其中, [0013] In order to solve the above problems, the present invention discloses a device for adjusting the reference cell threshold voltages, the memory chip includes a non-control state machine, the programming device and verification means; wherein,

[0014] 所述控制状态机,包括: [0014] The control state machine, comprising:

[0015] 接收模块,用于接收来自测试机台的参考单元信息;及 [0015] a receiving module for receiving the reference cell information from the test station; and

[0016] 控制模块,用于根据所述参考单元信息,控制所述编程装置和校验装置工作; [0016] The control module, and means for checking device operating according to the reference cell information, controlling the program;

[0017] 所述编程装置,用于对当前参考单元进行编程操作; The [0017] programmed means for operating the current program reference cells;

[0018] 所述校验装置,用于对当前参考单元进行校验操作,并将校验结果反馈给所述控制状态机; [0018] The checking means for checking a current reference operate unit, and the check result to the control state machine;

[0019] 所述控制状态机还包括: [0019] The control state machine further comprises:

[0020] 判断模块,用于判断所述校验结果是否符合预置条件,若是,则结束当前参考单元的调整,否则,通知所述控制模块,对当前参考单元继续执行控制操作。 [0020] determination means for determining whether the check result satisfies a preset condition, and if yes, ending the current reference adjustment means, otherwise, notifying the control module, the reference unit performs a control operation to continue on the current.

[0021] 优选的,所述编程装置包括多个第一使能端,所述校验装置包括多个第二使能端; [0021] Preferably, said programming means comprises a plurality of enabling a first end, a second plurality of said checking means comprises an enable terminal;

[0022] 所述控制模块,用于根据所述参考单元信息,通过所述第一使能端控制所述编程装置工作,以及,通过所述第二使能端控制所述校验装置工作。 [0022] The control module is configured according to the reference cell information, by said first enable terminal of the control means programming work, and, by the second enable terminal of the control means of the calibration work.

[0023] 优选的,所述装置还包括:外部参考输入通路,用于产生目标电流; [0023] Preferably, the apparatus further comprising: an external reference input channel, for generating a target current;

[0024] 所述校验装置,用于测量当前参考单元的电流,判断该测量电流是否小于所述目标电流,并将判断结果作为校验结果反馈给所述控制状态机; [0024] The verification means for measuring a current present reference cell, it is determined whether the measured current is less than the target current, and the determination result as the check result to the control state machine;

[0025] 所述预置条件为,所述校验结果为真。 [0025] The preset condition, the check is true.

[0026] 优选的,所述接收模块,还用于接收来自测试机台的参考单元状态查询信息; [0026] Preferably, the receiving module is further configured to receive a reference cell from the test machine state query information;

[0027] 所述控制状态机还包括: [0027] The control state machine further comprises:

[0028] 状态输出模块,用于根据参考单元状态查询信息,输出相应参考单元的调整状态。 [0028] The status output module, configured to query the status information of the reference cell, the corresponding reference output adjustment unit.

[0029] 优选的,所述调整状态包括:正在操作、操作结束和操作失败。 [0029] Preferably, the adjustment state comprises: is operating, the operation ends, and the operation fails.

[0030] 另一方面,本发明还公开了一种测试系统,包括测试机台,以及前述的参考单元阈值电压的调整装置; [0030] another aspect, the present invention also discloses a test system comprising a testing apparatus, and the adjusting means of the reference cell threshold voltages;

[0031] 其中,所述测试机台,用于将非易失存储器芯片的参考单元信息发送至所述接收模块。 [0031] wherein said testing apparatus, means for transmitting the reference information to the nonvolatile memory chip receiving module.

[0032] 另一方面,本发明还公开了一种参考单元阈值电压的调整方法,所述方法在非易失存储器芯片内部执行,包括: [0032] another aspect, the present invention also discloses a method for adjusting the reference cell threshold voltage, the method executed in the internal nonvolatile memory chip, comprising:

[0033] 接收来自测试机台的参考单元信息; [0033] receiving the reference cell information from the test machine;

[0034] 根据所述参考单元信息,产生第一控制信号和第二控制信号; [0034] according to the reference cell information, generates a first control signal and a second control signal;

[0035] 依据所述第一控制信号,对当前参考单元进行编程操作; [0035] According to the first control signal, the current reference cell programming operation;

[0036] 依据所述第二控制信号,对当前参考单元进行校验操作,得到校验结果; [0036] According to the second control signal, the current reference operate unit check, the check result is obtained;

[0037] 判断所述校验结果是否符合预置条件,若是,则当前参考单元调整完毕,否则,对当前参考单元继续执行编程操作。 [0037] It is determined whether the check result satisfies a preset condition, and if yes, the current reference cell is adjusted, otherwise, the current reference cell program operation continues.

[0038] 优选的,所述第一控制信号为第一使能信号,以及,所述第二控制信号为第二使能信号。 [0038] Preferably, the first control signal is a first enable signal, and a second control signal for the second enable signal.

[0039] 优选的,所述方法还包括:[0040] 接收外部输入的目标电流; [0039] Preferably, the method further comprises: [0040] receiving an externally input target current;

[0041] 所述校验步骤为,测量当前参考单元的电流,判断该测量电流是否小于所述目标电流,以该判断结果作为校验结果; [0041] The steps of the check, the current reference cell current measurement, it is determined whether the measured current is less than the target current determination result as to the check result;

[0042] 所述预置条件为,所述校验结果为真。 [0042] The preset condition, the check is true.

[0043] 优选的,所述方法还包括: [0043] Preferably, the method further comprising:

[0044] 接收来自测试机台的参考单元状态查询信息; [0044] received from the reference unit state machine testing query information;

[0045] 根据参考单元状态查询信息,输出相应参考单元的调整状态。 [0045] The reference cell state inquiry information, to adjust the output state of the respective reference cells.

[0046] 优选的,所述调整状态包括:正在操作、操作结束和操作失败。 [0046] Preferably, the adjustment state comprises: is operating, the operation ends, and the operation fails.

[0047] 与现有技术相比,本发明具有以下优点: [0047] Compared with the prior art, the present invention has the following advantages:

[0048] 本发明在非易失存储器芯片内部进行参考单元阈值电压的调整,具体而言,只需复用芯片内部的电压脉冲和电压,即可控制芯片内部的编程装置和校验装置正常工作;而芯片内部电压的下电到上电只需μ s数量级的切换时间,即可提供测试机台以稳定的电压,因而相对于现有技术的ms数量级的切换时间,本发明能够大大降低参考单元阈值电压的调整时间; [0048] The present invention, reference is made to adjust the threshold value of the cell voltage within the non-volatile memory chips, specifically, only the multiplexing means and the checking means programming voltage pulses and the voltage work inside the chip, to the interior of the control chip ; the lower chip internal voltage electrical power to the switching time on the order of only μ s, the test can provide a stable voltage machine, and thus with respect to the switching time of the order of ms prior art, the present invention can greatly reduce the reference cell threshold voltage adjustment time;

[0049] 再者,相对于现有技术一个测试通道的局限性,只能一一对芯片中的参考单元进行串行调整,本发明无需芯片与外部的测试通道,可以在非易失存储器芯片内部对多个参考单元进行并行调整,因而,能够进一步降低芯片中参考单元测试的整体时间,从而降低测试成本。 [0049] Further, the limitations of the prior art with respect to a test channel, only eleven pairs chip serial adjustment reference cell, the present invention does not require the test chip and the external channel in the nonvolatile memory chip can be a plurality of internal parallel adjustment reference cells, thus further reducing the overall test time chip reference cell, thereby reducing the test cost.

附图说明 BRIEF DESCRIPTION

[0050] 图1是现有技术一种参考单元阈值电压的调整方法流程图; [0050] FIG. 1 is a prior art method of one kind of reference cell threshold voltage adjusting a flow chart;

[0051] 图2是本发明一种参考单元阈值电压的调整装置实施例的结构图; [0051] FIG. 2 is a block diagram of the present invention with reference to one kind of embodiment of the adjusting device of the embodiment of cell threshold voltage;

[0052] 图3是本发明一种参考单元阈值电压的调整装置示例; [0052] FIG. 3 is an example of the present invention, apparatus for adjusting a reference cell threshold voltages;

[0053] 图4是本发明一种测试系统实施例的结构图; [0053] FIG 4 is a configuration diagram of an embodiment of the present invention A test system;

[0054] 图5是本发明一种参考单元阈值电压的调整方法实施例的流程图。 [0054] FIG. 5 is a flowchart present invention provides a method of adjusting the reference cell threshold voltages of the embodiment.

具体实施方式 Detailed ways

[0055] 为使本发明的上述目的、特征和优点能够更加明显易懂,下面结合附图和具体实施方式对本发明作进一步详细的说明。 [0055] For the above-described objects, features and advantages of the invention more apparent, the accompanying drawings and the following specific embodiments of the present invention will be further described in detail.

[0056] 本发明实施例的核心构思之一在于,在非易失存储器芯片内部进行参考单元阈值电压的调整;由于非易失存储器芯片内部电压的下电到上电只需μs数量级的时间,即可提供测试机台以稳定的电压,因而能够降低参考单元阈值电压的调整时间。 [0056] One embodiment of the core concept of the present invention that the adjustment value for the reference cell threshold voltage in the internal nonvolatile memory chips; since the non-volatile memory chip internal voltage electric power only to the order of μs time, providing a test machine to a stable voltage, it is possible to reduce the adjusting time of the reference cell threshold voltage.

[0057] 参照图2,示出了本发明一种参考单元阈值电压的调整装置实施例的结构图,具体可以包括位于非易失存储器芯片内部的控制状态机201、编程装置202和校验装置203 ;其中, [0057] Referring to Figure 2, there is shown a block diagram of the present invention with reference to one kind of embodiment of the cell threshold voltage adjusting apparatus in embodiment, it may include a specific non-volatile memory chip control state machine 201, the programming device 202 and the verification means 203; wherein,

[0058] 所述控制状态机201,具体可以包括: [0058] The control state machine 201, specifically comprising:

[0059] 接收模块211,用于接收来自测试机台的参考单元信息;及 [0059] The receiving module 211 for receiving the reference cell information from the test station; and

[0060] 控制模块212,用于根据所述参考单元信息,控制所述编程装置202和校验装置203工作;[0061] 所述编程装置202,用于对当前参考单元进行编程操作; [0060] The control module 212, according to the reference cell information, said program control means 202 and 203 work checking means; [0061] The programming means 202, for the current reference cell programming operation;

[0062] 所述校验装置203,用于对当前参考单元进行校验操作,并将校验结果反馈给所述控制状态机; [0062] The checking means 203 for checking the current reference operate unit, and the check result to the control state machine;

[0063] 所述控制状态机201还可以包括: [0063] The control state machine 201 may further comprise:

[0064] 判断模块213,用于判断所述校验结果是否符合预置条件,若是,则结束当前参考单元的调整,否则,通知所述控制模块212,对当前参考单元继续执行控制操作。 [0064] The determining module 213 for determining whether the check result satisfies a preset condition, and if yes, ending the current reference adjustment means, otherwise, notifying the control module 212 controls the operation of the reference cell current continues.

[0065] 本发明的调整装置可以应用在各种非易失存储器芯片的测试过程中,例如,Flash芯片,EEPROM芯片等,下面仅仅以Flash芯片为例进行说明,其它非易失存储器芯片请参照即可。 [0065] The adjusting device according to the present invention can be used in various non-volatile memory chip testing process, for example, Flash chips, EEPROM chip, just below the Flash chip as an example, other non-volatile memory chips, refer to It can be.

[0066] 在实际中,用户可通过测试机台,以指令的形式输入所述参考单元信息;假设当前Flash芯片中包括128个参考单元,编号分别为:0,1,2,...,127,则所述参考单元信息中可以是上述参考单元编号的任意组合,例如,{参考单元O}、{参考单元O,参考单元50,参考单元100}等,其中,集合符号{}中的内容代表所述参考单元信息。 [0066] In practice, the user can test the machine, in the form of instruction information input into said reference cell; assumed that the current Flash chip 128 comprises a reference cell numbers were: 0,1,2, ..., 127, the information in the reference cell can be any combination of the above unit number of the reference, e.g., reference cell {O}, {O reference cell, reference cell 50, reference cell 100}, etc., wherein the set of symbols {} representing the contents of the reference cell information.

[0067] 本发明中,所述控制状态机201主要有两个功能,一是测试机台接口功能,接收来自测试机台的参考单元信息;二是控制功能,也即,根据所述参考单元信息。 [0067] In the present invention, the control state machine 201 has two main functions, one test machine interface function, receives the reference cell information from the test station; Second control function, i.e. according to the reference cell information. 控制编程装置202和校验装置203工作,自动完成参考单元阈值电压的调整。 Programming the control device 203 and the work of checking means 202, automatically adjust the value of the reference cell threshold voltage.

[0068] 具体而言,所述控制状态机201能够控制编程装置202的所有操作,以及,校验装置203的所有操作。 [0068] Specifically, the control state machine 201 can be programmed to control the operation of all devices of all operations, and a calibration device 202 203.

[0069] 在具体实现中,可以基于使能信号实现上述控制;例如,在所述编程装置202中设置多个第一使能(Enable)端A,其中,每个第一使能端A对应一个编程操作;这样,对于该第一使能端A,当其有效时,即是启动相应的编程操作,当其无效时,即是结束相应的编程操作;因此,控制模块212可以通过控制所有的第一使能端A,以控制编程装置202的所有操作。 [0069] In a specific implementation, the enable signal can be realized based on the control; for example, a first plurality of enable (Enable) terminal A, wherein each of the first enable terminal A corresponding to the programming device 202 a programming operation; Thus, for the first enable terminal a, when it is active, that is, to start the respective programming operation, when it is inactive, i.e., is the end of a respective program operation; therefore, the control module 212 can control all a first enable terminal a, programmed to control all operations of the apparatus 202.

[0070] 同理,也可以在所述校验装置203中设置多个第二使能端B,其中,每个第二使能端B对应一个校验操作;控制模块212可以通过控制所有的第二使能端B,以控制校验装置203的所有操作。 [0070] Similarly, the check may be provided in a plurality of second means 203 enable terminal B, wherein each of the second enable terminal B corresponding to a verification operation; control module 212 may control all by a second enable terminal B, to control the operation of all the calibration device 203.

[0071] 为使本领域技术人员更好地理解本发明,以下通过具体的示例说明本发明的调整过程,具体可以包括: [0071] to enable those skilled in the art better understand the present invention, the following description of the present invention, the adjustment process through specific examples, specifically comprising:

[0072] 步骤S1、接收模块211接收来自测试机台的参考单元信息{参考单元0}; [0072] step S1, the receiving module 211 receives a reference cell information from the testing machine reference cell {0};

[0073] 在实际中,可采用地址位表示Flash芯片中参考单元,例如,采用7位数据表示128个参考单元,采用6位数据表示64个参考单元,等等;这样,所述编程装置202和校验装置203即可根据具体的地址位得知操作对象。 [0073] In practice, the address bits may be used in the reference cell represents the Flash chip, e.g., with 7-bit data representing the reference cell 128, a six-digit data represents the reference unit 64, and the like; so, the programming device 202 and checking that the operation target device 203 according to the specific address bits.

[0074] 步骤S2、控制模块212控制所述编程装置202,针对参考单元O进行编程操作; [0074] Step S2, the control module 212 controls the programming device 202, a programming operation for a reference unit O;

[0075] 举例来说,在启动所述编程操作时,控制模块212可以通过有效第一使能端Al,使得编程装置202对参考单元的漏极端(drain)施加幅值为4V、宽度为2μ s的电压脉冲,以及,通过有效第一使能端A2,对使得编程装置202对参考单元的栅极端(gate)施加9.5V的电压,等等。 [0075] For example, when starting the program operation, the control module 212 may enable a first end by effectively Al, such that the programming drain terminal apparatus 202 pairs (Drain) reference cell amplitude 4V is applied, a width of 2μ s voltage pulses, and by a first effective enable terminal A2, a voltage of 9.5V is applied to the programming device 202 such that the gate terminal (gate) reference cells, and the like.

[0076] 在结束所述编程操作时,控制模块212可以通过无效第一使能端Al,关断漏极端的电压,以及,通过无效第一使能端A2,使得栅极端的电压变为0,等等。 [0076] At the end of the programming operation, the control module 212 may enable a first end by invalid Al, off the drain terminal voltage, and a first enable terminal invalid by A2, so that the gate terminal voltage becomes 0 ,and many more. [0077] 步骤S3、控制模块212控制所述校验装置203,针对参考单元O进行校验操作,将校验结果反馈给所述控制状态机; [0077] Step S3, the control module 212 controls the checking means 203 performs a verify operation for a reference O unit, the verification result to the control state machine;

[0078] 举例来说,在启动整个校验操作时,控制模块212可以通过有效第二使能端BI,使得校验装置203对参考单元的漏极端施加IV电压,以及,通过有效第二使能端B2,对使得校验装置203对参考单元的栅极端施加7V的电压,等等。 [0078] For example, when starting the validation operation, control module 212 may be enabled by a second end of the BI effectively, so that the drain terminal of the calibration device 203 of the reference voltage applying unit IV, and by effectively making the second enable terminal B2, a voltage 7V applied to the calibration device 203 such that the gate terminal of the reference cell, and the like.

[0079] 在步骤间的切换时,步骤S2涉及到电压的下电:漏极端4V — 0,栅极端9.5V — O ;步骤S3涉及到电压的上电:漏极端O — IV,栅极端O — 7V ;其中,符号一代表电压的变化过程。 [0079] When switching between the steps, the step S2 is related to the voltage: the drain terminal 4V - 0, the gate terminal of 9.5V - O; in step S3 relates to the power voltage: the drain terminal O - IV, the gate terminal O - 7V; wherein the symbols representative of a voltage change process.

[0080] 由于芯片内部具有电压脉冲和电压,故本发明只需复用这些电压脉冲和电压,SP可使得编程装置202和校验装置203正常工作;而芯片内部电压的下电到上电只需μ s数量级的时间,即可提供测试机台以稳定的电压,因而相对于现有技术的ms数量级的切换时间,本发明能够大大降低参考单元阈值电压的调整时间。 [0080] Since the internal voltage and a voltage pulse, so that the present invention only multiplex these voltage pulses and the voltage, SP programming device 203 may be such that normal operation and checking means 202; the lower chip internal voltage electric power only to the μ s for an order of time, to provide a test machine at a stable voltage, and thus with respect to the switching time of the order of ms prior art, the present invention can greatly reduce the adjustment time of the reference cell threshold voltage.

[0081] 在校验装置203对参考单元的漏极端和栅极端施加电压后,所述校验装置203的工作过程可以为,测量当前参考单元的电流,判断该测量电流Iref是否小于目标电流ITH,并将判断结果作为校验结果反馈给所述控制状态机;也即,此种情况下所述校验结果可以包括:真和伪。 [0081] After application of the drain voltage and gate terminals checking means of the reference unit 203, during operation the check device 203 may, measure the current of the reference cell current, it determines whether the measured current is less than the target current Iref ITH , and the judgment result as the check result to the control state machine; That is, in this case the check result may include: a pseudo and true.

[0082] 参照图3,在本发明的一种示例中,所述目标电流Ith可以源自外部参考输入通路3A,也即,外部参考输入通路3A接校验装置203的输入端。 [0082] Referring to FIG 3, in one example of the present invention, the target current Ith may be derived from the external reference input channel 3A, i.e., an external reference input connected to an input terminal 3A passage checking device 203.

[0083] 步骤S4、判断模块213判断所述校验结果是否符合预置条件,若是,则结束当前参考单元的调整,否则,通知所述控制模块212,对当前参考单元继续执行控制操作。 [0083] Step S4, the determining module 213 determines whether the check result satisfies a preset condition, and if yes, ending the current reference adjustment means, otherwise, notifying the control module 212 controls the operation of the reference cell current continues.

[0084] 对应上例,在所述校验结果为真时,符合预置条件,控制状态机201即可结束当前参考单元的调整;在所述校验结果为假时,则继续控制所述编程装置202和校验装置203,针对当前参考单元进行工作。 [0084] corresponding to the embodiment, the check result is true, meet the preset condition, the control state machine 201 to the end of the current reference adjustment unit; when the check result is false, then control continues to the programming device 202 and the verification apparatus 203, the reference for the current work unit.

[0085] 在本发明的一种优选实施例中,在用户对某参考单元的调整状态存在需求时,还可以通过测试机台向Flash芯片发送查询指令。 [0085] In one preferred embodiment of the present invention, when there is a need for a user to adjust a state of the reference cell may also be instructions to send a query by Flash chip testing machine.

[0086] 例如,在所述查询指令为参考单元状态查询信息时,所述接收模块211,还可用于接收来自测试机台的参考单元状态查询信息; [0086] For example, the reference cell state query information, the receiving module 211, may also receive a reference cell from the test machine state information in the query is a query instruction;

[0087] 此时,所述控制状态机201还可以包括: [0087] At this time, the control state machine 201 may further comprise:

[0088] 状态输出模块,用于根据参考单元状态查询信息,输出相应参考单元的调整状态。 [0088] The status output module, configured to query the status information of the reference cell, the corresponding reference output adjustment unit.

[0089] 在实际中,所述状态输出模块可以采用数据位的输出值组合表示某参考单元的各种调整状态,例如,00代表正在操作,01代表操作结束,以及,10代表操作失败等,而测试机台可以通过读操作获取这些调整状态,本发明对具体的输出方式不加以限制。 [0089] In practice, the state of the output value of the output module may employ a combination of various adjustment data bits represent the status of a reference cell, e.g., 00 is operating on behalf of the end 01 is operating, and 10 represents the operation fails and the like, and test equipment may be acquired by reading the state of operation of these adjustments, according to the present invention, specific output mode is not limited thereto.

[0090] 参照图4,示出了本发明一种测试系统的实施例,具体可以包括: [0090] Referring to Figure 4, illustrates a test system according to embodiments of the present invention specifically include:

[0091] 探针台401和测试机台402,待测试芯片403安装在探针台401中,通过探针台401与测试机台402相连;及 [0091] The probe station 401 and test equipment 402, 403 to be mounted on the test chip probe station 401, station 401 is connected through the probe 402 and the test machine; and

[0092] 参考单元阈值电压的调整装置404,其位于待测试芯片403内部; [0092] The value of the reference cell threshold voltage adjustment means 404, 403 located inside the chip to be tested;

[0093] 其中,所述测试机台402,可通过探针台401向待测芯片403发送测试指令,所述测试指令可以包括参考单元信息等; [0093] wherein the 402 test machine, a probe station 401 can send instructions to the test chip under test 403, test instructions may include the reference cell information;

[0094] 进一步,所述参考单元阈值电压的调整装置404具体可以包括:控制状态机4041、编程装置4042和校验装置4043 ; [0094] Further, the reference cell threshold voltage adjusting means 404 may include: a control state machine 4041, 4042 and programming means checking means 4043;

[0095] 其中,所述控制状态机4041,具体可以包括: [0095] wherein the control state machine 4041 may specifically include:

[0096] 接收模块40411,用于接收来自测试机台402的参考单元信息;及 [0096] 40411 receiving module for receiving the reference cell information from the test station 402; and

[0097] 控制模块40412,用于根据所述参考单元信息,控制所述编程装置4042和校验装置4043工作; [0097] The control module 40412, a working device 4043 and checking means 4042 according to the reference cell information, controlling the program;

[0098] 所述编程装置4042,用于对当前参考单元进行编程操作; [0098] The programming means 4042, for the current reference cell programming operation;

[0099] 所述校验装置4043,用于对当前参考单元进行校验操作,并将校验结果反馈给所述控制状态机; [0099] The verification means 4043, the reference for the current unit operation check, and the check result to the control state machine;

[0100] 所述控制状态机4041还可以包括: [0100] The control state machine 4041 may further comprises:

[0101] 判断模块40413,用于判断所述校验结果是否符合预置条件,若是,则结束当前参考单元的调整,否则,通知所述控制模块40412,对当前参考单元继续执行控制操作。 [0101] 40413 determination module, configured to determine whether the check result satisfies a preset condition, and if yes, ending the current reference adjustment means, otherwise, notifying the control module 40412, the reference current control operation unit continues execution.

[0102] 在实际中,所述待测试芯片403可以为Flash芯片、EEPROM芯片等非易失存储器 [0102] In practice, the chip 403 may be tested as Flash memory chips, EEPROM chip nonvolatile

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[0103] 具体的,所述编程装置4042可以包括多个第一使能端,所述校验装置4043可以包括多个第二使能端; [0103] Specifically, the programming device 4042 may include a plurality of a first enable terminal, the check means 4043 may comprise a plurality of a second enable terminal;

[0104] 此时,所述控制模块40412,则可用于根据所述参考单元信息,通过所述第一使能端控制所述编程装置4042工作,以及,通过所述第二使能端控制所述校验装置4043工作。 [0104] At this time, the control module 40412 can be used according to the reference cell information, by the end of the first enable control of the working programming means 4042, and, by the end of the second enable control of the said checking means 4043 work.

[0105] 优选的,所述参考单元阈值电压的调整装置404还可以包括:外部参考输入通路,用于产生目标电流; [0105] Preferably, the reference cell threshold voltage adjustment device 404 may further comprises: an external reference input channel, for generating a target current;

[0106] 相应地,所述校验装置4043,则用于测量当前参考单元的电流,判断该测量电流是否小于所述目标电流,并将判断结果作为校验结果反馈给所述控制状态机; [0106] Accordingly, the check means 4043, the current measuring unit is a reference current for determining whether the measured current is less than the target current, and the determination result as the check result to the control state machine;

[0107] 此时的预置条件为,所述校验结果为真。 [0107] At this preset condition, the check is true.

[0108] 在用户对某参考单元的调整状态存在需求时,还可以通过测试机台402向待测芯片403的发送查询指令,而待测芯片403中的参考单元阈值电压的调整装置404可以向测试机台402反馈相应的操作状态信息:正在操作、操作结束和操作失败等等。 [0108] When there is a need for a user to adjust a state of the reference cell, may also send a query to the chip under test instruction 403, the testing machine by adjusting means 402 of the reference cell threshold voltage of the chip under test may be 404 to 403 test machine 402 corresponding operation state information feedback: is operating, the operation ends, and the operation fails and the like.

[0109] 例如,所述查询指令为参考单元状态查询信息时,所述接收模块40411,还可用于接收来自测试机台402的参考单元状态查询信息; [0109] For example, the query instruction is the reference cell state query information, the receiving module 40411, may also be used to receive a query from the reference information unit 402 of the status of the test machine;

[0110] 此时,所述控制状态机4041还可以包括: [0110] At this time, the control state machine 4041 may further comprises:

[0111] 状态输出模块,用于根据所述参考单元状态查询信息,输出相应参考单元的调整状态。 [0111] status output module, configured to query status information from the reference cell, the corresponding reference output adjustment unit.

[0112] 与前述装置实施例相应,本发明还公开了一种参考单元阈值电压的调整方法,所述方法在非易失存储器芯片内部执行,参照图5,具体可以包括: [0112] Example embodiments of the device corresponding to the present invention also discloses a method for adjusting the reference cell threshold voltage, the method is performed in the internal nonvolatile memory chips, with reference to FIG. 5, may include:

[0113] 步骤501、接收来自测试机台的参考单元信息; [0113] Step 501, receiving the reference cell information from the test machine;

[0114] 步骤502、根据所述参考单元信息,产生第一控制信号和第二控制信号; [0114] Step 502, according to the reference cell information, generates a first control signal and a second control signal;

[0115] 步骤503、依据所述第一控制信号,对当前参考单元进行编程操作; [0115] Step 503, according to the first control signal, the current reference cell programming operation;

[0116] 步骤504、依据所述第二控制信号,对当前参考单元进行校验操作,得到校验结果; [0116] Step 504, according to the second control signal, the current reference operate unit check, the check result is obtained;

[0117] 在实际中,所述第一控制信号应能够控制各种编程操作,具体地,可采用第一使能信号来使能各种编程操作;同理,可采用第二使能信号来使能各种校验操作。 [0117] In practice, the first control signal should be programmed to control various operations, in particular, the first enable signal may be used to enable various programming operations; Similarly, the second enable signal may be used enable various verification operation. [0118] 步骤505、判断所述校验结果是否符合预置条件,若是,则当前参考单元调整完毕,否则,返回步骤503对当前参考单元继续执行编程操作。 [0118] Step 505 determines whether the check result satisfies a preset condition, and if yes, the current reference cell is adjusted, otherwise, return to step 503 to continue the current reference cell program operation is performed.

[0119] 在本发明的一种优选实施例中,所述调整方法还可以包括如下步骤: [0119] In one preferred embodiment of the present invention, the adjusting method may further comprise the steps of:

[0120] 接收外部输入的目标电流; [0120] receiving an externally input target current;

[0121] 此时,所述步骤504的执行过程可以为,测量当前参考单元的电流,判断该测量电流是否小于所述目标电流,以该判断结果作为校验结果; Execution [0121] In this case, step 504 may, measure the current of the current reference cell, it is determined whether the measured current is less than the target current determination result as to the check result;

[0122] 所述步骤505中的预置条件则可以为,所述校验结果为真。 [0122] The preset condition may be that the step 505, the check is true.

[0123] 针对用户对某参考单元的调整状态的需求,在本发明的另一种优选实施例中,所述调整方法还可以包括: [0123] For a user needs to adjust the state of the reference cell, in another preferred embodiment of the present invention, the adjustment method may further comprise:

[0124] 接收来自测试机台的参考单元状态查询信息; [0124] received from the reference unit state machine testing query information;

[0125] 根据参考单元状态查询信息,输出相应参考单元的调整状态。 [0125] The reference cell state inquiry information, to adjust the output state of the respective reference cells.

[0126] 其中,所述调整状态可以包括:正在操作、操作结束和操作失败,等等。 [0126] wherein the adjustment state may include: being operated, and operation end operation fails, and the like.

[0127] 本发明具有如下优点: [0127] The present invention has the following advantages:

[0128] 1、在非易失存储器芯片内部进行参考单元阈值电压的调整;由于非易失存储器芯片内部电压的下电到上电只需μ s数量级的时间,即可提供测试机台以稳定的电压,因而能够降低参考单元阈值电压的调整时间。 [0128] 1, the adjustment value for the reference cell threshold voltage in the internal nonvolatile memory chips; since the non-volatile memory chip internal voltage electrical power to the order of only μ s of time, to provide a stable test machine voltage, it is possible to reduce the adjusting time of the reference cell threshold voltage.

[0129] 2、由于一个非易失存储器芯片上只有一个测试通道,现有技术只能一一对芯片中的参考单元进行串行调整,而本发明无需芯片与外部的测试通道,可以在非易失存储器芯片内部对多个参考单元进行并行地调整,因而,能够进一步降低芯片中参考单元测试的整体时间。 [0129] 2, since only one test channel on a non-volatile memory chip, the prior art only eleven pairs chip serial adjustment reference cell, and the present invention does not require the test chip and the external channel can be in a non- volatile memory chip in parallel to a plurality of reference cells adjusted, therefore, possible to further reduce the overall chip time reference unit tests.

[0130] 本说明书中的各个实施例均采用递进的方式描述,每个实施例重点说明的都是与其他实施例的不同之处,各个实施例之间相同相似的部分互相参见即可。 [0130] In the present specification, various embodiments are described in a progressive way, differences from the embodiment and the other embodiments each of which emphasizes embodiment, various portions of the same embodiment of similarity between the embodiments refer to each other. 对于方法实施例而言,由于其与装置实施例基本相似,所以描述的比较简单,相关之处参见装置实施例的部分说明即可。 For Example, since they are substantially similar to the embodiment of the device, it is relatively simple description, see the relevant section of the embodiment of a device can be described.

[0131] 以上对本发明所提供的一种参考单元阈值电压的调整方法、装置和一种测试系统,进行了详细介绍,本文中应用了具体个例对本发明的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本发明的方法及其核心思想;同时,对于本领域的一般技术人员,依据本发明的思想,在具体实施方式及应用范围上均会有改变之处,综上所述,本说明书内容不应理解为对本发明的限制。 [0131] a method of adjusting the reference cell above the present invention provides a threshold voltage, device and a test system, described in detail herein through specific examples of the principles and embodiments of the invention are set forth above described embodiment merely used to help understanding the method and core ideas of the present invention; Meanwhile, those of ordinary skill in the art, according to the idea of ​​the present invention, in the embodiments and application scopes modification that the heald the content of the specification should not be construed as limiting the present invention.

Claims (11)

1.一种参考单元阈值电压的调整装置,其特征在于,包括位于非易失存储器芯片内部的控制状态机、编程装置和校验装置;其中, 所述控制状态机,包括: 接收模块,用于接收来自测试机台的参考单元信息'及控制模块,用于根据所述参考单元信息,控制所述编程装置和校验装置工作; 所述编程装置,用于对当前参考单元进行编程操作; 所述校验装置,用于对当前参考单元进行校验操作,并将校验结果反馈给所述控制状态机; 所述控制状态机还包括: 判断模块,用于判断所述校验结果是否符合预置条件,若是,则结束当前参考单元的调整,否则,通知所述控制模块,对当前参考单元继续执行控制操作。 An adjusting device reference cell threshold voltages, wherein the internal chip nonvolatile memory comprises a control state machine, the programming device and verification means; wherein the control state machine, comprising: a receiving module, with means to receive the reference information 'and a control module from the test equipment, and means for checking device operating according to the reference cell information, the controlling program; said programming means for programming the current reference operate unit; the checking means for checking a current reference operate unit, and the check result to the control state machine; the control state machine further comprises: determining means for determining whether the check result meet the preset condition, and if yes, ending the current reference adjustment means, otherwise, notifying the control module, the reference unit performs a control operation to continue on the current.
2.如权利要求1所述的装置,其特征在于,所述编程装置包括多个第一使能端,所述校验装置包括多个第二使能端; 所述控制模块,用于根据所述参考单元信息,通过所述第一使能端控制所述编程装置工作,以及,通过所述第二使能端控制所述校验装置工作。 2. The apparatus according to claim 1, characterized in that said programming means comprises a first plurality of enable terminal, the check means comprises a plurality of second enable terminal; wherein the control module for the reference cell information, by said first enable terminal of the control means programming work, and, by the second enable terminal of the control means of the calibration work.
3.如权利要求1或2所述的装置,还包括:外部参考输入通路,用于产生目标电流; 所述校验装置,用于测量当前参考单元的电流,判断该测量电流是否小于所述目标电流,并将判断结果作为校验结果反馈给所述控制状态机;` 所述预置条件为,所述校验结果为真。 3. The apparatus of claim 1 or claim 2, further comprising: an external reference input channel, for generating a target current; the check means, for measuring a current present reference cell, it is determined whether the measured current is less than the target current, and the determination result as the check result to the control state machine; `the preset condition, the check is true.
4.如权利要求1或2所述的装置,其特征在于,所述接收模块,还用于接收来自测试机台的参考单元状态查询信息; 所述控制状态机还包括: 状态输出模块,用于根据参考单元状态查询信息,输出相应参考单元的调整状态。 4. The apparatus of claim 1 or claim 2, wherein the receiving module is further configured to receive a reference cell from the test machine state inquiry information; and the control state machine further comprising: a status output module, with Referring to the query information based on cell state, the output adjustment of the corresponding reference cell.
5.如权利要求4所述的装置,其特征在于,所述调整状态包括:正在操作、操作结束和操作失败。 5. The apparatus according to claim 4, wherein said adjustment state comprises: is operating, the operation ends, and the operation fails.
6.一种测试系统,其特征在于,包括测试机台,以及前述I至2中任一项所述的参考单元阈值电压的调整装置; 其中,所述测试机台,用于将非易失存储器芯片的参考单元信息发送至所述接收模块。 A test system comprising a test machine, and I to the adjustment device as claimed in any one of a second reference cell threshold voltage; wherein said testing apparatus for non- reference cell information is transmitted to the memory chip receiving module.
7.—种参考单元阈值电压的调整方法,其特征在于,所述方法在非易失存储器芯片内部执行,包括: 接收来自测试机台的参考单元信息; 根据所述参考单元信息,产生第一控制信号和第二控制信号; 依据所述第一控制信号,对当前参考单元进行编程操作; 依据所述第二控制信号,对当前参考单元进行校验操作,得到校验结果; 判断所述校验结果是否符合预置条件,若是,则当前参考单元调整完毕,否则,对当前参考单元继续执行编程操作。 7.- method for adjusting the value of the reference cell threshold voltage, wherein said method is performed internal nonvolatile memory chip, comprising: receiving the reference cell information from the test equipment; according to the reference cell information, generating a first control signal and a second control signal; according to the first control signal, the current reference cell program operation; according to the second control signal, the current reference operate unit check, the check result obtained; determining the correction test results conform to preset conditions, and if so, the current reference unit adjustment is completed, otherwise, continue with the programming operation for the current reference unit.
8.如权利要求7所述的方法,其特征在于,所述第一控制信号为第一使能信号,以及,所述第二控制信号为第二使能信号。 8. The method according to claim 7, wherein said first control signal is a first enable signal, and a second control signal for the second enable signal.
9.如权利要求7或8所述的方法,其特征在于,还包括:接收外部输入的目标电流; 所述校验步骤为,测量当前参考单元的电流,判断该测量电流是否小于所述目标电流,以该判断结果作为校验结果; 所述预置条件为,所述校验结果为真。 9. The method according to claim 78, characterized in that, further comprising: receiving an externally input target current; the check step, the current reference cell current measurement, determines whether the measured current is less than the target current, as a result of determination to the check result; as the preset condition, the check is true.
10.如权利要求7或8所述的方法,其特征在于,还包括: 接收来自测试机台的参考单元状态查询信息; 根据参考单元状态查询信息,输出相应参考单元的调整状态。 10. The method according to claim 78, characterized in that, further comprising: receiving from a test reference cell state machine query information; query information from the reference cell state, the output adjustment of the corresponding reference cell.
11.如权利要求10所述的方法,其特征在于,所述调整状态包括:正在操作、操作结束和操作失败。 11. The method according to claim 10, wherein said adjustment state comprises: is operating, the operation ends, and the operation fails. ` `
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