CN102339897A - Manufacturing method for new-generation silicon-based solar cell - Google Patents
Manufacturing method for new-generation silicon-based solar cell Download PDFInfo
- Publication number
- CN102339897A CN102339897A CN2010106191127A CN201010619112A CN102339897A CN 102339897 A CN102339897 A CN 102339897A CN 2010106191127 A CN2010106191127 A CN 2010106191127A CN 201010619112 A CN201010619112 A CN 201010619112A CN 102339897 A CN102339897 A CN 102339897A
- Authority
- CN
- China
- Prior art keywords
- silicon nitride
- dipping
- solar cell
- substrate
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a manufacturing method for a new-generation silicon-based solar cell. The manufacturing process comprises the following steps of: 1) cleaning 3-4N polysilicon serving as a substrate; 2) dipping in a closed environment in the protection of argon and forming a p-type first semiconductor layer on the surface of the substrate; 3) taking the dipping sheet out, annealing by stages, cooling to room temperature, and diffusing to manufacture a junction by using POCl3 as a diffusing source at high temperature; 4) cleaning and depositing a silicon nitride antireflective film; 5) sintering on the silicon nitride antireflective film to form an ohm contact electrode and performing silk-screen printing to form a back field electrode; and 6) encapsulating and testing. The manufacturing process has the advantages that: the polysilicon with relatively low purity serves as the substrate and the p-type layer is formed by dipping in the melted silicon liquid at high temperature, so that the processes of ingot casting, slicing, manufacturing wool and the like are avoided, the procedures are saved, consumption is reduced and efficiency is improved; process stability is high; environmental pollution is avoided; repeatability, consistency and yield of products are high; and important significance for large-scale production is achieved.
Description
Technical field:
The present invention relates to a kind of semiconductor device, more specifically to a kind of silica-based solar cell manufacture method of new generation.
Background technology:
Solar energy is a kind of cleaning, pollution-free, inexhaustible natural energy resources, is that electric energy is the important technology basis that utilizes solar energy on a large scale with solar energy converting.Being subjected to the influence of silicon materials price and the expensive preparation process of silicon solar cell at present, is the comparison difficulty if will further reduce the silicon solar cell cost.Under common situation, expect that from silicon the manufacturing process of solar cell is to be made into the silicon chip that the square silicon ingot that is easy to cut into slices is cut into manufacturing solar cells then to polysilicon through ingot casting.Ingot casting is a process that energy consumption is higher, the time spent is long in this technology; Reach more than 60 hours; And because tangent line has certain diameter dimension, every silicon chip slice loss thickness at least 180 μ m cause above half silicon material loss in slicing processes; Be difficult to avoid the breakage of silicon chip simultaneously, cause the double increase of cost.In order to reduce cost, shortened process, we have invented silicon solar cell manufacture method of new generation.Once can dip in and get several thousand, need 0.2-0.6 second, material savings at every turn and the thick advantage that can make area battery for the substrate of 1-2 millimeter is arranged.
Summary of the invention:
The objective of the invention is to provide that a kind of technology is simple to the prior art weak point, high efficiency, silica-based solar cell manufacture method of new generation that production cost is low.
The objective of the invention is to realize through following measure: a kind of silica-based solar cell manufacture method of new generation is characterized in that step is following:
(1) substrate cleaning: getting the 3-4N polysilicon is substrate, the P＜0.2ppmWt of its 3-4N polysilicon, B＜0.2ppmWt in-situ high temperature cleaning, and said high temperature is 1350～1400 ℃;
(2) in the closed environment of argon shield, dip in sheet: dipping in liquid is 6-7N polycrystalline silicon liquid 1420～1450 ℃ of molten conditions, B＜0.2ppmWt; Be contained in the high-purity quartz crucible; Dipping in liquid temp when dipping in sheet, to be controlled at 1420 ℃, time be 0.2～0.6 second, and substrate surface forms p type first semiconductor layer;
(3) dip in the cool to room temperature of annealing stage by stage after sheet takes out, carry out the diffusion system knot of n type semiconductor layer, the diffusion system is become: under hot conditions, use POCl
3Make to diffuse to form on the p type layer of diffuse source to step 2 the n type layer of 100～300 nanometers, hot conditions is 950 ℃ of optimum values in 900～1000 ℃, and the diffusion duration is 30-45 minute, and optimum value is 35 minutes;
(4) taking out the silicon chip with p-n junction character cleans; Remove the impurity of edge deposit; Carry out the deposit of silicon nitride antireflective coating again, the deposit of silicon nitride antireflective coating: under 200～300 ℃ of temperature, adopt PECVD with silane and high-purity ammonia as reacting gas deposited silicon nitride SiN
xAntireflective coating, said silane is with volumetric concentration 10% nitrogen dilution;
(5) at silicon nitride SiN
xCarry out sintering according to electrode design pattern silk screen printing silver slurry on the antireflective coating, silver atoms burns silicon nitride film and emitter forms Ohm contact electrode, and silk screen printing simultaneously forms back of the body field plate.
(6) solar cell is encapsulated with battery efficiency test.
Compared with prior art; The silica-based solar cell manufacture method of new generation that the present invention proposes; Have following advantage: 1) the present invention is a kind of low cost, high efficiency, is easy to the manufacture craft and the manufacture method of the polysilicon solar cell of industrialization, has very large impetus for the development of solar cell.2) polysilicon that uses relative low-purity forms p type layer through in the molten silicon liquid of high temperature, dipping in sheet, thereby has avoided technologies such as ingot casting, section and making herbs into wool as substrate, has not only saved the time but also has reduced consumption, has improved efficient greatly.3) the techniques save energy that the present invention adopted, technology stability is good, does not have problem of environmental pollution, and makes repeatability, the high conformity of product, and rate of finished products is high, and is significant to large-scale production.
Embodiment:
The present invention specifically implements by following step:
1. selecting the 3-4N polysilicon for use is substrate, the P＜0.2ppmWt of its 3-4N polysilicon, B＜0.2ppmWt, and the in-situ high temperature cleaning, said high temperature is 1350～1400 ℃, makes it remain on this temperature.
2. in the closed environment of argon shield, dip in sheet: dipping in liquid is 6-7N polycrystalline silicon liquid 1420～1450 ℃ of molten conditions, B＜0.2ppmWt; Be contained in the high-purity quartz crucible; Dipping in liquid temp when dipping in sheet, to be controlled at 1420 ℃, time be 0.2～0.6 second, and substrate surface forms light dope large tracts of land p type first semiconductor layer.
3. dip in the cool to room temperature of annealing stage by stage after sheet takes out, be incubated 6 minutes at 1350 ℃, 1250 ℃ are incubated 6 minutes, and 900 ℃ are incubated 6 minutes, and 300 ℃ are incubated 6 minutes, arrive room temperature then; The diffusion system knot that carries out the n type semiconductor layer that continues: under hot conditions, use POCl
3Make to diffuse to form on the p type layer of diffuse source to step 2 the n type layer of 100～300 nanometers, hot conditions is 900-1000 ℃, shows that through result of the test optimum value is 950 ℃, spreads duration 30-45 minute, and optimum value is 35 minutes.In diffusion system knot process, can mix the atmosphere that forms through control reacting gas, impurity gas, protection gas and diluent gas and form the doped n type semiconductor layer down, make it reach controllable resistivity.
(4) take out silicon chip and clean, remove the impurity of edge deposit, carry out the deposit of silicon nitride antireflective coating again with p-n junction character, under 200～300 ℃ of temperature, adopt PECVD with silane and high-purity ammonia as reacting gas deposited silicon nitride SiN
xAntireflective coating, said silane is with volumetric concentration 10% nitrogen dilution.This step has the passivation protection effect to solar cell surface, reduces the recombination velocity of the few son in surface, can significantly improve the conversion efficiency of solar energy, meanwhile makes it reach best antireflective effect through control film light refractive index and thickness.
(5) at silicon nitride SiN
xCarry out sintering according to electrode design pattern silk screen printing silver slurry on the antireflective coating, silver atoms burns silicon nitride film and emitter forms Ohm contact electrode, and silk screen printing simultaneously forms back of the body field plate.
(6) solar cell is encapsulated with battery efficiency test.
Embodiment 1
Polysilicon substrate to 3-4N level purity carries out high-temperature process at 1380 ℃.Make the silicon liquid temp in the crucible reduce to 1420 ℃ through heating in medium frequency, in the closed environment of high-purity argon gas＞99.999% protection, dip in sheet, dipping in the time of getting was 0.4 second.Cool off insulation annealing then, be incubated 6 minutes at 1350 ℃, 1250 ℃ are incubated 6 minutes, and 900 ℃ are incubated 6 minutes, and 300 ℃ are incubated 6 minutes, then cool to room temperature.Under 950 ℃ of high temperature with POCl
3Make diffuse source silicon chip is spread, form n type layer.Then silicon chip is cleaned, remove the impurity of edge deposit, carry out the deposit of silicon nitride antireflective coating again.280 ℃ with PECVD with silane and high-purity ammonia as reacting gas deposited silicon nitride antireflection layer.Detect through test, the solar cell transformation efficiency of making is 16.36%.
Embodiment 2
Condition is with embodiment 1, and the polysilicon substrate of 3-4N level purity is carried out high-temperature process at 1395 ℃.Silicon liquid temp in the crucible is reduced to 1420 ℃, and dipping in the time of getting was 0.5 second.Be incubated 6 minutes at 1350 ℃, 1250 ℃ are incubated 6 minutes, and 900 ℃ are incubated 6 minutes, and 300 ℃ are incubated 6 minutes, then cool to room temperature.Under 950 ℃ of high temperature with POCl
3Make diffuse source silicon chip is spread, form n type layer.Silicon chip is cleaned, behind the impurity of removal edge deposit, carry out the deposit of silicon nitride antireflective coating.At 300 ℃ with PECVD method deposited silicon nitride antireflection layer.Detect through test, the solar cell transformation efficiency of making is 16.29%.
The foregoing description is not construed as limiting the invention, and all employings are equal to the technical scheme that form obtained of replacement or equivalent transformation, all drop within protection scope of the present invention.
Claims (1)
1. silica-based solar cell manufacture method of new generation is characterized in that step is following:
(1) substrate cleaning: getting the 3-4N polysilicon is substrate, the P＜0.2ppmWt of its 3-4N polysilicon, B＜0.2ppmWt in-situ high temperature cleaning, and said high temperature is 1350～1400 ℃;
(2) in the closed environment of argon shield, dip in sheet: dipping in liquid is 6-7N polycrystalline silicon liquid 1420～1450 ℃ of molten conditions, B＜0.2ppmWt; Be contained in the high-purity quartz crucible; Dipping in liquid temp when dipping in sheet, to be controlled at 1420 ℃, time be 0.2～0.6 second, and substrate surface forms p type first semiconductor layer;
(3) dip in the cool to room temperature of annealing stage by stage after sheet takes out, carry out the diffusion system knot of n type semiconductor layer, the diffusion system is become: under hot conditions, use POCl
3Make to diffuse to form on the p type layer of diffuse source to step 2 the n type layer of 100～300 nanometers, hot conditions is 950 ℃ of optimum values in 900～1000 ℃, and the diffusion duration is 30-45 minute, and optimum value is 35 minutes;
(4) taking out the silicon chip with p-n junction character cleans; Remove the impurity of edge deposit; Carry out the deposit of silicon nitride antireflective coating again, the deposit of silicon nitride antireflective coating: under 200～300 ℃ of temperature, adopt PECVD with silane and high-purity ammonia as reacting gas deposited silicon nitride SiN
xAntireflective coating, said silane is with volumetric concentration 10% nitrogen dilution;
(5) at silicon nitride SiN
xCarry out sintering according to electrode design pattern silk screen printing silver slurry on the antireflective coating, silver atoms burns silicon nitride film and emitter forms Ohm contact electrode, and silk screen printing simultaneously forms back of the body field plate;
(6) solar cell is encapsulated with battery efficiency test.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106191127A CN102339897A (en) | 2010-12-29 | 2010-12-29 | Manufacturing method for new-generation silicon-based solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106191127A CN102339897A (en) | 2010-12-29 | 2010-12-29 | Manufacturing method for new-generation silicon-based solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102339897A true CN102339897A (en) | 2012-02-01 |
Family
ID=45515511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010106191127A Pending CN102339897A (en) | 2010-12-29 | 2010-12-29 | Manufacturing method for new-generation silicon-based solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102339897A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762228A (en) * | 2016-03-03 | 2016-07-13 | 黄淮学院 | Novel solar cell preparation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101055904A (en) * | 2006-12-31 | 2007-10-17 | 高文秀 | Making method of dipping multi-crystal silicon solar battery p-n junction |
| CN101101936A (en) * | 2007-07-10 | 2008-01-09 | 中电电气（南京）光伏有限公司 | Making method for selective transmission node crystal silicon solar battery |
| CN101179100A (en) * | 2007-01-17 | 2008-05-14 | 江苏林洋新能源有限公司 | Manufacturing method of large area low bending flexure ultra-thin type double face lighting solar cell |
-
2010
- 2010-12-29 CN CN2010106191127A patent/CN102339897A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101055904A (en) * | 2006-12-31 | 2007-10-17 | 高文秀 | Making method of dipping multi-crystal silicon solar battery p-n junction |
| CN101179100A (en) * | 2007-01-17 | 2008-05-14 | 江苏林洋新能源有限公司 | Manufacturing method of large area low bending flexure ultra-thin type double face lighting solar cell |
| CN101101936A (en) * | 2007-07-10 | 2008-01-09 | 中电电气（南京）光伏有限公司 | Making method for selective transmission node crystal silicon solar battery |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762228A (en) * | 2016-03-03 | 2016-07-13 | 黄淮学院 | Novel solar cell preparation method |
| CN105762228B (en) * | 2016-03-03 | 2017-05-10 | 黄淮学院 | Novel solar cell preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100334744C (en) | Silicon solar battery structure and making method | |
| CN201699033U (en) | Two-sided illuminated crystalline silicon solar battery | |
| CN105895738A (en) | Passivated contact N-type solar cell, preparation method, assembly and system | |
| CN101820007B (en) | High-conversion rate silicon and thin film compound type multijunction PIN solar cell and manufacturing method thereof | |
| CN101369612A (en) | Production method for implementing selective emitter solar battery | |
| CN101414647A (en) | Diffusion method for high-efficiency solar battery local depth junction | |
| CN102751371B (en) | Solar thin film battery and manufacturing method thereof | |
| CN103500774B (en) | A kind of method utilizing P-type silicon ball to prepare local back surface field as boron source | |
| CN101692467A (en) | Method for manufacturing high efficient two-sided P-shaped crystalline silicon solar cell based on silk-screen printing technique | |
| CN106711239A (en) | Preparation method of PERC solar battery and PERC solar battery | |
| CN102403369A (en) | Passivation dielectric film for solar cell | |
| CN102842646A (en) | Preparation method of interdigitated back-contact battery based on N-type substrate | |
| CN102534547A (en) | Preparation process for gradient antireflection silicon nitride thin film of crystalline silicon solar cell | |
| CN103456837A (en) | Method for manufacturing solar cell with local back surface field passivation | |
| CN103346214B (en) | A kind of silica-based radial homogeneity heterojunction solar cell and preparation method thereof | |
| CN103632934A (en) | Boron diffusion method of N type silicon chip, crystalline silicon solar cell and manufacturing method of crystalline silicon solar cell | |
| TW201528538A (en) | Low-cost back-contact cell production method suitable for mass production | |
| CN102709389B (en) | Method for preparing double-faced back contact solar cell | |
| CN103367513A (en) | Polycrystalline silicon thin film solar cell and preparation method thereof | |
| CN103117331A (en) | N-type heterojunction solar cell and manufacturing method thereof | |
| CN101894871B (en) | High-conversion rate silicon crystal and thin film compound type unijunction PIN (Positive Intrinsic-Negative) solar battery and manufacturing method thereof | |
| Raval et al. | Industrial silicon solar cells | |
| CN102306664A (en) | Solar battery with black silicon structure on emitter and preparation method of solar battery | |
| CN204067375U (en) | A kind of N-type local aluminium back of the body crystal silicon solar energy battery | |
| CN202585426U (en) | Crystalline silicon solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120201 |