CN102336391B - For the manufacture of method and the sensor device of the sensor device of pressure drag - Google Patents
For the manufacture of method and the sensor device of the sensor device of pressure drag Download PDFInfo
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- CN102336391B CN102336391B CN201110167456.3A CN201110167456A CN102336391B CN 102336391 B CN102336391 B CN 102336391B CN 201110167456 A CN201110167456 A CN 201110167456A CN 102336391 B CN102336391 B CN 102336391B
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000011159 matrix material Substances 0.000 claims abstract description 40
- 230000000694 effects Effects 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000004020 conductor Substances 0.000 claims description 28
- 238000009413 insulation Methods 0.000 claims description 20
- 238000009417 prefabrication Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 230000001133 acceleration Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
Abstract
The present invention relates to the method for a kind of sensor device for the manufacture of the pressure drag for inertial sensor (10), this sensor device has mass elements (12), matrix part (14) and connects the arm (16) playing pressure drag effect of this mass elements (12) and matrix part (14).In addition, the present invention relates to a kind of sensor device (10) of corresponding pressure drag and a kind of corresponding inertial sensor.
Description
Technical field
The present invention relates to a kind of method of the sensor device for the manufacture of the pressure drag for inertial sensor, this sensor device has mass elements, matrix part and connects the arm playing pressure drag effect of this mass elements and matrix part.The invention still further relates to a kind of sensor device of corresponding pressure drag and corresponding inertial sensor.
Background technology
Disclose the sensor device-so-called beam structure of the pressure drag of the acceleration transducer for inertial sensor such as pressure drag-.This beam structure has mass elements (so-called " quality of vibration induction "), matrix part and connects the arm (crossbeam (denBiegebalken)) of pressure drag of this mass elements and matrix part.
The acceleration transducer with the pressure drag of this sensor device of known type is general, corresponding mass elements effect acceleration between mass elements and the matrix part fixing this device at sensor internal structuring doping and be configured to cause mechanical stress in the arm of so-called crossbeam.The mechanical stress formed at this in the structure of arm is measured by piezoresistive effect.The impedance of the pressure drag structure of this arm connects with full electric bridge usually carries out electroanalysis, is namely such as connected in Wheatstone bridge circuit.The mechanical stress tried to achieve can when the quality of mass elements is known for determining acceleration co-pending.
The sensor device (beam structure) of this pressure drag for inertial sensor such as rotational-rate sensor and acceleration transducer can construct based on common semiconductor base.But at this, the sensor device great majority of the arm having mass elements, matrix part and connect this mass elements and matrix part carry out manufacturing based on SOI technology (SOI: silicon-on-insulator technology) and can not be integrated in the manufacture process of integrated circuit (IC) of the electronic circuit device of this sensor.
Summary of the invention
The present invention proposes a kind of method of the sensor device for the manufacture of the pressure drag for inertial sensor for this reason, this sensor device has mass elements, matrix part and connects the arm playing pressure drag effect of this mass elements and matrix part, manufactures by means of following steps:
-prefabrication be made up of the semiconductor base covered with electric insulation layer is provided, the region that this semiconductor base has doped region and undoped region or adulterates in another form, wherein said prefabrication has two regions, one of these two subregions spaced apart from each other respectively with doped region, two regions
-manufacture two breach through electric insulation layer, wherein the first breach to be arranged in the Part I region of doped region and the second breach is arranged in the Part II region of doped region,
-manufacture through the first breach until the first contact of doped region, through the second breach until the second contact of doped region and the conductor circuit at least extending to the region of Part II overlying regions from the first contact on electric insulation layer, and
-separate described two regions by the material removal of local, except arm remaining between two regions, wherein said arm have be made up of dopant material between the Nei Liangge subregion, region of conductor circuit contact pin, conductor circuit itself and described layer the band stayed between conductor circuit and contact pin.By The inventive process provides following advantage, namely the method can be implemented fairly simplely and can be integrated in the manufacture process of the integrated circuit of the electronic circuit device of this sensor.Following manufacturing step is set by the present invention: (a) provides the prefabrication be made up of the semiconductor base covered with electric insulation layer, the region that this semiconductor base has doped region and undoped region or adulterates in another form, wherein said prefabrication has two regions, one of these two subregions spaced apart from each other respectively with doped region, two regions, b () manufactures two breach through electric insulation layer, wherein the first breach to be arranged in the Part I region of doped region and the second breach is arranged in the Part II region of doped region, c () manufactures through the first breach until the first contact of doped region, through the second breach until the second contact of doped region and the conductor circuit at least extending to the region of Part II overlying regions from the first contact on electric insulation layer, and (d) separate described two regions by the material removal of local, except arm remaining between two regions, wherein said arm has the contact pin be made up of dopant material between the Nei Liangge subregion, region of conductor circuit, the band stayed between conductor circuit and contact pin of conductor circuit itself and described layer.
The result of described manufacture method is the sensor device of the pressure drag defined for inertial sensor, it has the arm playing pressure drag effect of mass elements, matrix part and quality of connection element and matrix part, and these assemblies of wherein said sensor device are made up of common semiconductor base.This semiconductor base has doped region, this doped region extends to mass elements as contact pin from matrix part and is provided with the layer of electric insulation, and on this layer, described conductor circuit extends to mass elements and wherein said doped region and conductor circuit carry out electrical contact by means of the first contact mutually by the first breach mass elements from matrix part equally.The scope of described sensor device is especially less than 100 μm.An arm of this device but multiple arms of preferred this device are connected in bridge circuit (such as Wheatstone bridge) in the inside of inertial sensor.
Propose in preferred design of the present invention, carry out material removal by means of at least one etching process.The material of the local of separating step is removed and such as can be realized by mask etch method.Especially hide the region of arm, mass elements and the matrix part produced by means of mask in mask etch method.Described etching is preferably dry ecthing, especially remove material, support dry ecthing that is isoionic, aerochemistry, this dry ecthing is especially industrially used in semiconductor technology, micro-structural technique and Display Technique.This concept that spoken language also uses " plasma etching ".Thus, " chemical dry ecthing " method (CDE) is referred to particularly.As etching gas, people preferably or use the fluorine of non-diluted, or use fluoro-inert gas-mixture.Very common etching gas is sulfur hexafluoride (SF
6).
Especially the combination formed by means of anisotropy and isotropic etching process realizes material and removes.This is such as ditching process (Trenchprozess) and pure SF
6the combination that etching is formed.At this, ditching process is the process of the ion(ic) etching of reaction.
At this, " anisotropic etching " is interpreted as the engraving method of micro-technique, wherein along the etching of the degree of depth obviously faster than the etching of side.
According to the favourable design regulation by method of the present invention, first partly semiconductor base is carried out on one side adulterating and on the surface of this side, being provided with electric insulation layer subsequently to manufacture prefabrication.This manufacture can easily realize with standards body.
According to another favourable design regulation of the present invention, described electric insulation layer is dielectric layer.
According to another favourable design regulation of the present invention, described semiconductor base is the substrate without sacrifice layer (opfenschichtfrei).Especially specify, described semiconductor base is silicon base.
Especially specify, the arm matrix Linear between described two subregions extends.
Specify in another preferred design of the present invention, in the first region by mass elements together structuring in separating step namely in step (d).
In addition, the present invention relates to a kind of sensor device of the pressure drag for inertial sensor, especially according to the sensor device that method noted earlier manufactures, it has the arm playing pressure drag effect of mass elements, matrix part and quality of connection element and matrix part, wherein said sensor device is the sensor device be made up of common semiconductor base and this semiconductor base has doped region, this doped region extends to mass elements as contact pin from matrix part and is provided with electric insulation layer, extends to mass elements equally at this layer of upper conductor circuit from matrix part.At this, doped region and conductor circuit pass through the mutual electrical contact of the first breach in mass elements by means of the first contact.
Finally, the invention still further relates to a kind of inertial sensor, this inertial sensor have at least one foregoing pressure drag sensor device and as the line unit being configured to integrated circuit on the common semiconductor base of matrix.This line unit preferably includes bridge circuit, connects the structure of pressure drag in this bridge circuit, namely the contact pin of sensor device.The matrix part of this sensor device is a part for matrix.
Accompanying drawing explanation
The present invention is explained in detail below according to the description implementing flexible program.Accompanying drawing illustrates:
Fig. 1 is the provided top view with the prefabrication of the semiconductor base with doped region,
Fig. 2 be Fig. 1 there is two contacts extending to doped region and the prefabrication from the conductor circuit of drawing of first described contact,
Fig. 3 is the sensor device except the pressure drag of remaining arm after two regions separating prefabrication,
Fig. 4 is the sectional view along Fig. 2 lines A-A of Fig. 3 in other words,
Fig. 5 is the sectional view of the lines B-B along Fig. 3, and
Fig. 6 is the sectional view of the lines C-C along Fig. 3.
Detailed description of the invention
Fig. 1 shows the structure step by step of the sensor device 10 for the pressure drag of inertial sensor respectively with top view to 3.The sensor device 10 completed in figure 3 has mass elements 12, matrix part 14 and connects the arm 16 playing pressure drag effect of this mass elements 12 and matrix part 14.Fig. 4 shows the sectional view of the shown in Figure 3 device 10 made in three of this device 10 different sections to 6.
Fig. 1 shows the prefabrication (semi-finished product) 18 provided of the sensor device 10 with semiconductor base 20, this semiconductor base has doped region 22 and surrounds the region not having the region 24 of adulterating to adulterate in another form in other words of this doped region 22 at least in part, and wherein this region of adulterating in another form has the another kind of doping way being different from doped region.Described semiconductor base 20 is preferably configured as silicon base.The layer 26 covering the electric insulation on the surface of described semiconductor base 20 not shown in the top view of Fig. 1 to 3, but especially can be seen in the sectional view of Fig. 4.The region 22 of described doping does not extend to the bottom of semiconductor base 20 in this embodiment, but is surrounded by the region 24 of adulterating in another form in other words of not adulterating in region rearward.Described doped region 22 is the region shown in superincumbent accompanying drawing region from the first area 28(of prefabrication 18 here) to extend to second area 30(be the region shown in accompanying drawing region below here).
Now, manufacture two breach 32,34 by the layer 26 of electric insulation in method step below manufacture method, wherein the first breach 32 to be arranged in the Part I region 36 of doped region 22 and the second breach 34 is arranged in the Part II region 38 of doped region 22.Described two subregions 36,38 are mutually opposing end regions of doped region 22, and wherein said Part I region 36 is arranged in the inside of the first area 28 of prefabrication 18 and Part II region 38 is arranged in the inside of the second area 30 of prefabrication 18.Described breach such as can be manufactured by means of mask by known engraving method.
Manufacture the first contact 40 reaching doped region 22 from the first breach 32 subsequently, in addition manufacture the second contact 42 reaching doped region 22 from the second breach 34 equally, and manufacture on the layer 26 of electric insulation and to extend to region above Part II region 38 from the first contact 40 and in the inside of second area 30 by the conductor circuit 44 that this region extends out.At this, described contact 40,42 and conductor circuit 44 are made of metal and preferably make by means of gas phase separation (CVD or PVC such as sprays).The first end section 46 of described conductor circuit 44 contacts the first contact 40 in first area 28, the second end section 48-as the second contact 42-when sensor device 10 is made as contact area 50,52 for its electrical connection.
The result of foregoing two method steps is shown in Figure 2.Accompanying drawing shows the top view of the square prefabrication 18 with the rectangle doped region 22 extending to second area 30 from first area 28 microsclerly, arranges one of two subregions 36,38 with contact 40,42 in the end segments of this doped region respectively.The interlude of described conductor circuit 44 extends in the shortest path between the longitudinal axis of rectangle doped region 22 is with the first and second regions 28,30 with its longitudinal axes parallel between two subregions 36,38, and end segments 46,48 respectively with the longitudinal axis perpendicular angular degree of rectangle doped region 22 extend.
In the method step subsequently of manufacture method, described two regions 28,30 are removed by material and are separated from each other, except arm 16 remaining between two regions 28,30.The band 56(stayed between conductor circuit 44 and contact pin 54 that is own and insulating barrier 26 is shown in Figure 5 by contact pin 54, conductor circuit 44 for described arm 16) form, wherein this contact pin is made up of the dopant material in conductor circuit 44 region between two subregions 36,38.The combination that the material of the material in the boundary region of prefabrication 18 between two regions 28,30 is removed by means of anisotropy and isotropic etching process realizes.
In the silicon base here used, namely by means of anisotropy and the etching of isotropic silicon (such as ditching process and pure SF
6etching) realize by base material-in IC process in order to manufacture the jockey of inertial sensor (sensor device 10 also belongs to this inertial sensor) and contact pin 54 that highly doped-silicon is made.
The top view of the device 10 that Fig. 3 has shown.The quality (mass elements 12) obtaining the vibration induction supported movingly is positioned on arm 16.On the opposite side of this arm 16, this arm is mechanically anchored in (this matrix part is connected with substrate/matrix one) on matrix part 14.The doping of described contact pin 54 be configured to planar and by Metal Contact above in contact 40,42.The described insulating barrier 26-being configured to dielectric layer as said-draw in the top view of Fig. 1 to 3 for clarity.
Described contact area 50 and 52 realizes electrical contact.Shown perforation is used for the elimination carried out by means of silicon etching process recited above.
Fig. 4 shows sensor device at (cross section A-A) of matrix part 14, (section B-B) of arm 16 and mass elements 12(C-C to 6) region in three cross sections.
At this, Fig. 4 shows matrix part (namely a part for matrix) 14, its doped region 22 with semiconductor base 20 and the region 24 not having doping or adulterate in another form, and the insulating barrier 26 on the surface with breach 34.Described breach 34 is passed by contact 42, and this contact defines the first contact area 50.In addition, the second end section 48 of described conductor circuit 44 is positioned on identical height on the insulation layer 26, and this end segments defines the second contact area 52.
Fig. 5 shows arm 16, its have be made up of the semi-conducting material adulterating contact pin 54, insulating barrier 26 remaining band 56 and can be used as the metallic conductor circuit 44 in " loop ".Matrix 60 is positioned at below it.
Finally, Fig. 6 shows mass elements 12 and the matrix 60 arranged apart with mass elements 12.
Thereby, it is possible to by means of mentioned manufacture method based on the very little inertial sensor of the unsteady flow principle manufacturing structure of pressure drag.
At this, the sensor size of described sensor device and axis can be selected be less than 100 μm of length of sides.In addition, this manufacture process can be fully integratible in the semiconductor processes for the manufacture of sensor electronics.
Claims (9)
1. for the manufacture of the method for the sensor device (10) of the pressure drag for inertial sensor, this sensor device has mass elements (12), matrix part (14) and connects the arm (16) playing pressure drag effect of this mass elements (12) and matrix part (14), manufactures by means of following steps:
-prefabrication (18) be made up of the semiconductor base (20) covered with electric insulation layer (26) is provided, the region (24) that this semiconductor base has doped region (22) and undoped region or adulterates in another form, wherein said prefabrication (18) has two regions (28,30), one of two subregions spaced apart from each other (36,38) respectively with doped region (22), these two regions
-manufacture two breach (32,34) through electric insulation layer (26), wherein the first breach (32) to be arranged in the Part I region (36) of doped region (22) and the second breach (34) is arranged in the Part II region (38) of doped region (22)
-manufacture through the first breach (32) until first contact (40) of doped region (22), through the second breach (34) until second contact (42) of doped region (22) and the conductor circuit (44) in region at least extending to top, Part II region (38) from the first contact (40) on electric insulation layer (26), and
-separate described two regions (28,30) by the material removal of local, except arm (16) remaining between two regions (28,30), wherein said arm (16) have be made up of dopant material between the Nei Liangge subregion, region (36,38) of conductor circuit (44) contact pin (54), conductor circuit (44) itself and described layer (26) the band (56) stayed between conductor circuit (44) and contact pin (54).
2. by method according to claim 1, it is characterized in that, by means of at least one etching process, especially remove to realize material by means of the combination be made up of anisotropy and isotropic etching process.
3., by the method described in claim 1 or 2, it is characterized in that, first partly semiconductor base (20) carried out adulterating on one side to provide prefabrication (18) and on the surface of this side, be provided with electric insulation layer (26) subsequently.
4., by the method described in claim 1 or 2, it is characterized in that, described electric insulation layer (26) is dielectric layer.
5., by the method described in claim 1 or 2, it is characterized in that, described semiconductor base (20) is the substrate without sacrifice layer.
6., by the method described in claim 1 or 2, it is characterized in that, described semiconductor base (20) is silicon base.
7. by the method described in claim 1 or 2, it is characterized in that, arm (16) substantial linear between two subregions (36,38) extends.
8., by method described in claim 1 or 2, it is characterized in that, in separating step in first area (28) by mass elements (12) structuring together.
9. for the sensor device (10) of the pressure drag of inertial sensor, its method according to claim 1 and 2 manufactures, it has mass elements (12), the arm (16) playing pressure drag effect of matrix part (14) and quality of connection element (12) and matrix part (14), wherein said sensor device (10) is the sensor device be made up of common semiconductor base (20), and this semiconductor base (20) has doped region (24), this doped region extends to mass elements (12) as contact pin (54) from matrix part (14) and is provided with electric insulation layer (26), conductor line (44) extends to mass elements (12) from matrix part (14) equally on the electrically insulating layer, and wherein doped region (22) and conductor circuit (44) by means of the first contact (40) by the electrical contact mutually of the first breach (32) in mass elements (12).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010030345.3A DE102010030345B4 (en) | 2010-06-22 | 2010-06-22 | Method for producing a piezoresistive sensor arrangement and sensor arrangement |
| DE102010030345.3 | 2010-06-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102336391A CN102336391A (en) | 2012-02-01 |
| CN102336391B true CN102336391B (en) | 2015-12-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110167456.3A Active CN102336391B (en) | 2010-06-22 | 2011-06-21 | For the manufacture of method and the sensor device of the sensor device of pressure drag |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102336391B (en) |
| DE (1) | DE102010030345B4 (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6211540B1 (en) * | 1997-10-16 | 2001-04-03 | Seiko Instruments Inc. | Semiconductor strain sensor and scanning probe microscope using the semiconductor strain sensor |
| US6389899B1 (en) * | 1998-06-09 | 2002-05-21 | The Board Of Trustees Of The Leland Stanford Junior University | In-plane micromachined accelerometer and bridge circuit having same |
| CN1566961A (en) * | 2003-07-09 | 2005-01-19 | 友达光电股份有限公司 | Semiconductor acceleration sensing equipment |
| CN1808122A (en) * | 2005-01-20 | 2006-07-26 | 冲电气工业株式会社 | Acceleration sensor with redundant contact holes |
| CN101005097A (en) * | 2006-01-17 | 2007-07-25 | 台达电子工业股份有限公司 | Semiconductor pressure resistance type sensor and its operation method |
| CN101692099A (en) * | 2009-10-16 | 2010-04-07 | 中国人民解放军国防科学技术大学 | Piezoresistive double-shaft micro-accelerometer with on-chip zero offset compensation and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010002994A1 (en) | 2010-03-18 | 2011-09-22 | Robert Bosch Gmbh | Piezoresistive micromechanical sensor component and corresponding measuring method |
-
2010
- 2010-06-22 DE DE102010030345.3A patent/DE102010030345B4/en active Active
-
2011
- 2011-06-21 CN CN201110167456.3A patent/CN102336391B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6211540B1 (en) * | 1997-10-16 | 2001-04-03 | Seiko Instruments Inc. | Semiconductor strain sensor and scanning probe microscope using the semiconductor strain sensor |
| US6389899B1 (en) * | 1998-06-09 | 2002-05-21 | The Board Of Trustees Of The Leland Stanford Junior University | In-plane micromachined accelerometer and bridge circuit having same |
| CN1566961A (en) * | 2003-07-09 | 2005-01-19 | 友达光电股份有限公司 | Semiconductor acceleration sensing equipment |
| CN1808122A (en) * | 2005-01-20 | 2006-07-26 | 冲电气工业株式会社 | Acceleration sensor with redundant contact holes |
| CN101005097A (en) * | 2006-01-17 | 2007-07-25 | 台达电子工业股份有限公司 | Semiconductor pressure resistance type sensor and its operation method |
| CN101692099A (en) * | 2009-10-16 | 2010-04-07 | 中国人民解放军国防科学技术大学 | Piezoresistive double-shaft micro-accelerometer with on-chip zero offset compensation and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102336391A (en) | 2012-02-01 |
| DE102010030345A1 (en) | 2011-12-22 |
| DE102010030345B4 (en) | 2019-05-09 |
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