CN101005097A - Semiconductor pressure resistance type sensor and its operation method - Google Patents
Semiconductor pressure resistance type sensor and its operation method Download PDFInfo
- Publication number
- CN101005097A CN101005097A CN 200610005063 CN200610005063A CN101005097A CN 101005097 A CN101005097 A CN 101005097A CN 200610005063 CN200610005063 CN 200610005063 CN 200610005063 A CN200610005063 A CN 200610005063A CN 101005097 A CN101005097 A CN 101005097A
- Authority
- CN
- China
- Prior art keywords
- type sensor
- pressure resistance
- resistance type
- voltage
- semiconductor pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
Being connected to a circuit electrically, the piezoresistance sensor of semiconductor includes basis material of semiconductor, at least a piezoresistance module, and a conducting material layer. Basis material of semiconductor includes a suspensory membrane, and a basis material. Basis material is nearly setup to circumference of the suspensory membrane. Being setup inside the suspensory membrane, the piezoresistance module is connected to circuit electrically. Conductive material layer is connected to the suspensory membrane electrically.
Description
Technical field
The present invention relates to a kind of semiconductor transducer, particularly relate to a kind of semiconductor pressure resistance type sensor and method of operation thereof.
Background technology
Pressure sensor is widely used in each field, and wherein the principle of pressure measurement includes pressure resistance type (piezoresistive type), piezoelectric type (piezoelectric type) and condenser type (capacitive type) according to the difference of application and demand.Wherein, piezoresistive transducer has advantages such as high output voltage and high sensitivity, and it utilizes effect that the resistance value of material can change with stress as measuring principle.
Please refer to shown in Figure 1, generalized section for a kind of known semiconductor pressure resistance type sensor 1, semiconductor pressure resistance type sensor 1 comprises semiconductor base material 10, a pressure drag assembly 11 and a circuit 12, and wherein semiconductor substrate 10 (for example single crystal silicon substrate) comprises an outstanding film (diaphram) 101 and a base material (base) 102.Base material 102 is in order to the two ends of fixing outstanding film 101, and pressure drag assembly 11 is arranged in the outstanding film 101, in order to the sensing component as semiconductor pressure resistance type sensor 1.Circuit 12 electrically connects with pressure drag assembly 11, and circuit 12 for example comprises a CMOS (Complementary Metal Oxide Semiconductor) (MOS), bridge circuit, amplifying circuit or logical circuit etc., in order to receive and to handle the signal that pressure drag assembly 11 is exported.
Semiconductor substrate 10 can be a n-N-type semiconductor N, and again by diffusion or ion implantation technology forms a p-type pressure drag assembly 11, in this, semiconductor substrate 10 forms a p-n junction (junction) with the face that connects of pressure drag assembly 11.As shown in Figure 1, the two ends of pressure drag assembly 11 can be respectively with a p+ type in be connected (interconnect) assembly 13 and electrically connect, 12 in circuit one of offers by being covered in one of semiconductor substrate 10 surfaces insulating barrier 14 that coupling assembling 13 electrically connects in opening 141 and the p+ type.
From the above, when applying a voltage V in semiconductor pressure resistance type sensor 1, below p-type pressure drag assembly 11, form negative space charge (negative space charge), this negative space charge can float in time, and cause the resistance value of pressure drag assembly 11 to change in time, and then make pressure drag assembly 11 output signals drift about in time (drift).In addition, because of insulating barrier 14 materials that cover pressure drag assembly 11 can fetter some positive surface charge, owing to the positive surface charge phenomenon that the resistance value that makes pressure drag assembly 11 changes in time that also can float in time is more serious, and then reduce the accuracy of pressure drag assembly 11 output signals.
For solving above-mentioned problem, as shown in Figure 2, known techniques forms a n+ type doped region 15 on semiconductor substrate 10, imposing an appropriate voltage in n+ type doped region 15 again makes p-n junction form reverse bias (reverse bias), thereby the restriction electric current is in pressure drag assembly 11 inside, thereby improves due to leakage current and reduce the phenomenon of the accuracy of semiconductor pressure resistance type sensor 1 measurement.Yet, in the manufacturing process of generally commonly using p-type pressure drag assembly 11, on n-N-type semiconductor N base material 10, form n+ type doped region 15 and need to increase extra process and for example light shield, doping and thermal diffusion etc. of cost.
In view of this, how to provide a kind of operation simple and can effectively improve the phenomenon that the resistance value of pressure drag assembly changes in time, real is one of important topic.
Summary of the invention
Therefore,, the invention provides a kind of semiconductor pressure resistance type sensor and method of operation thereof, reduce manufacturing cost, and effectively improve the accuracy of semiconductor pressure resistance type sensor measurement by simple and easy process for addressing the above problem.
According to purpose of the present invention, propose an another kind of semiconductor pressure resistance type sensor and a circuit and electrically connect, it comprises semiconductor base material, at least one pressure drag assembly and a conductive material layer.Semiconductor substrate comprises an outstanding film and a base material, and base material is adjacent to outstanding film periphery; The pressure drag assembly is arranged in the outstanding film, and electrically connects with circuit; Conductive material layer and outstanding film electrically connect.
According to another object of the present invention, propose an a kind of semiconductor pressure resistance type sensor system and a circuit and electrically connect, it comprises semiconductor base material, at least one pressure drag assembly, an insulating barrier and a shielding layer.Semiconductor substrate comprises an outstanding film and a base material, and base material is adjacent to outstanding film periphery; The pressure drag assembly is arranged in the outstanding film, and electrically connects with circuit; Insulating barrier is arranged on the semiconductor substrate and covers the pressure drag assembly; Shielding layer is arranged on the insulating barrier, and covers the insulating barrier to small part, and electrically connects with outstanding film.
For reaching above-mentioned purpose, comprise the following steps: to apply one first voltage in circuit and apply one second voltage according to the method for operation of a kind of semiconductor pressure resistance type sensor of the present invention in conductive material layer, when wherein the value that cuts the second voltage gained when first voltage was less than the conducting voltage between pressure drag assembly and the outstanding film, one of pressure drag assembly and outstanding film connect face and just can form a reverse bias or make this connect not conducting of face.
For reaching above-mentioned purpose, method of operation according to the present invention's another kind of semiconductor pressure resistance type sensor comprises the following steps: to apply one first voltage in circuit, apply one second voltage in conductive material layer and apply a tertiary voltage in shielding layer, when wherein the value that cuts the second voltage gained when first voltage was less than the conducting voltage between pressure drag assembly and the outstanding film, one of pressure drag assembly and outstanding film connect face and just can form a reverse bias or make this connect not conducting of face.In addition, tertiary voltage is in order to stablize one of this pressure drag assembly top surface potential
For reaching above-mentioned purpose, comprise the following steps: to apply one first voltage in circuit and apply one second voltage according to the method for operation of another semiconductor pressure resistance type sensor of the present invention in shielding layer, wherein, the value that cuts the second voltage gained when first voltage is during less than the conducting voltage between pressure drag assembly and the outstanding film, and one of pressure drag assembly and outstanding film connect face and just can form a reverse bias or make this connect not conducting of face.
From the above, utilize the outstanding film electric connection of a conductive material layer or a shielding layer and semiconductor substrate because of a kind of semiconductor pressure resistance type sensor of foundation the present invention and method of operation system thereof, wherein conductive material layer with cover series of strata and constituted by conductive material and nonisulated material respectively, with this semiconductor pressure resistance type sensor framework in a circuit, by putting on conductive material layer or shielding layer appropriate voltage, make the face that connects of pressure drag assembly and outstanding film form a reverse bias or make this connect not conducting of face, so limit electric current in the pressure drag assembly, and then improve the phenomenon that pressure drag assembly output signal drifts about in time.Compare with known techniques, the present invention does not need on semiconductor substrate to form the semiconductor doping district with pressure drag assembly different types, so the step of effectively simplifying working process reduces manufacturing cost, and then improves the accuracy of semiconductor pressure resistance type sensor measurement.
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Description of drawings
Fig. 1 and Fig. 2 are a kind of generalized section of known semiconductor pressure resistance type sensor.
Fig. 3 A and Fig. 3 B are the generalized section according to a kind of semiconductor pressure resistance type sensor of first embodiment of the invention.
Fig. 4 A and Fig. 4 B are the generalized section according to a kind of semiconductor pressure resistance type sensor of second embodiment of the invention.
Fig. 5 A and Fig. 5 B are the generalized section according to a kind of semiconductor pressure resistance type sensor of third embodiment of the invention.
Embodiment
Hereinafter with reference to correlative type, semiconductor pressure resistance type sensor and method of operation thereof according to preferred embodiment of the present invention are described, wherein identical assembly will be illustrated with identical reference marks.
First embodiment
Please be simultaneously with reference to Fig. 3 A and Fig. 3 B, according to a kind of semiconductor pressure resistance type sensor 2 of first embodiment of the invention, it comprises semiconductor base material 20, an insulating barrier 23, at least one pressure drag assembly 21, at least one interior coupling assembling 24 and a conductive material layer 22.A semiconductor pressure resistance type sensor 2 and a circuit 3 electrically connect, and circuit 3 for example is a bridge circuit or a temperature-compensation circuit.
Insulating barrier 23 is arranged on the semiconductor substrate 20 and covers pressure drag assembly 21.The material of insulating barrier 23 for example is silica (silicon oxide), silicon nitride (silicon nitride), silicon oxynitride (silicon oxynitride) etc. or its combination.
The semiconductor pressure resistance type sensor 2 of present embodiment more comprises at least one interior coupling assembling 24, shown in Fig. 3 A and Fig. 3 B, semiconductor pressure resistance type sensor 2 included at least one interior coupling assemblings 24 for example are coupling assembling 241 and one second interior coupling assemblings 242 in one first, it is electrically connected at the two ends of pressure drag assembly 21 respectively, wherein pressure drag assembly 21 electrically connects by coupling assembling in first 241 and circuit 3, and for example coupling assembling 241 can be used for being connected (figure is demonstration) with other assembly in the bridge circuit in first.And insulating barrier 23 makes coupling assembling 241 electric connections in circuit 3 and first by offering an opening 231.In the present embodiment, interior coupling assembling 24 for example is a p+ type semiconductor layer.
As shown in Figure 3A, conductive material layer 22 is arranged on the insulating barrier 23, and conductive material layer 22 and outstanding film 201 are directly contacted to electrically connect, and is original base material dopant level (N-) and hang film 201.The mode that conductive material layer 22 contacts with outstanding film 201 can be ohmic contact (ohmic contact) or Schottky contacts (Schottky contact).
Perhaps, shown in Fig. 3 B, the zone of conductive material layer 22 contacts is highly doped matter concentration district (p+) 25.P type doped region 25 between conductive material layer 22 and outstanding film 201, conductive material layer 22 is arranged in the outstanding film 201 relatively, and forms ohmic contact or Schottky contacts by the opening 232 of insulating barrier 23 with conductive material layer 22.P type doped region 25 used p type dopants are high-dopant concentration, so be p+ type doped region.What this need pay special attention to be, this p+ type doped region 25 does not need to add extra operation to be reached, and can be in forming carries out simultaneously in the operation of coupling assembling 24.
No matter be Fig. 3 A or the semiconductor pressure resistance type sensor 2 of Fig. 3 B, all can see through the suitable current potential that a voltage V1+ controls outstanding film (N-) 201 that applies, make the unlikely drift in time of current potential of outstanding film (N-) 201, wherein voltage V1+ can be bridge circuit voltage (ex.VB+) or other voltage that is higher than transducer bridge-type circuit voltage (ex. is from the Vs+ of temperature-compensation circuit) of pressure drag assembly 21, make the face that connects of pressure drag assembly 21 and outstanding film 201 form a reverse bias (reverse bias) or make P-N tie not conducting (across the voltage of PN junction less than conducting voltage), electric current can be limited in inner and outstanding film 201 current potentials of may command of resistor assembly, further, see through topology layout design like this and arrangement, can reach the purpose of floating when improving piezoresistive transducer 2 output signals.
Second embodiment
Please be simultaneously with reference to Fig. 4 A and Fig. 4 B, according to a kind of semiconductor pressure resistance type sensor 4 of second embodiment of the invention, it comprises semiconductor base material 20, an insulating barrier 23, at least one pressure drag assembly 21, at least one interior coupling assembling 24 and a shielding layer (Shield layer) 26.A semiconductor pressure resistance type sensor 4 and a circuit 3 electrically connect, and circuit 3 for example is a bridge circuit or a temperature-compensation circuit.In the present embodiment, architectural feature, material, set-up mode, annexation and the function of semiconductor substrate 20, pressure drag assembly 21, interior coupling assembling 24, insulating barrier 23 and circuit 3 is all as described in first embodiment, so repeat no more.
The difference of the present embodiment and first embodiment is that shielding layer 26 is arranged on the insulating barrier 23, and covers to the semiconductor pressure resistance type sensor 4 of the present embodiment of small part and do not have conductive material layer 22, but has Duoed a shielding layer 26 than first embodiment.Shielding layer 26 is arranged on the insulating barrier 23, and cover to the insulating barrier 23 of small part and with outstanding film 201 and electrically connect, more detailed theory, insulating barrier 23 is offered an opening 232,26 of shielding layers directly contact to electrically connect by opening 232 and outstanding film 201, and outstanding film 201 is original base material dopant level (N-), shown in Fig. 4 A.The mode that shielding layer 26 contacts with outstanding film 201 can be ohmic contact (ohmic contact) or Schottky contacts (Schottkycontact).The material of shielding layer 26 is nonisulated material, and its thermal coefficient of expansion (thermalcoefficient of expansion preferably is between-15ppm/ ℃ to+15ppm/ ℃ TCE).
Perhaps, shown in Fig. 4 B, the zone of shielding layer 26 contacts is highly doped matter concentration district (p+) 25.P type doped region 25 between shielding layer 26 and outstanding film 201, shielding layer 26 is arranged in the outstanding film 201 relatively, and forms ohmic contact or Schottky contacts by the opening 232 of insulating barrier 23 with shielding layer 26.P type doped region 25 used p type dopants are high-dopant concentration, so be p+ type doped region.What this need pay special attention to be, this p+ type doped region 25 does not need to add extra operation to be reached, and can be in forming carries out simultaneously in the operation of coupling assembling 24.
No matter be Fig. 4 A or the semiconductor pressure resistance type sensor 4 of Fig. 4 B, all can see through the suitable current potential that a voltage V2+ controls outstanding film (N-) 201 that applies, make the unlikely drift of current potential of outstanding film (N-) 201.In addition, suitably cover through the pressure drag assembly 21 of shielding layer 26, and apply voltage V2+,, make the unlikely drift in time of surface potential to stablize the surface potential of pressure drag assembly 21 tops with insulating barrier 23 belows.Wherein voltage V2+ can be bridge circuit voltage (as VB+) or other voltage that is higher than transducer bridge-type circuit voltage (Vs+ of Tathagata self-temperature compensating circuit) of pressure drag assembly 21, make the face that connects of pressure drag assembly 21 and outstanding film 201 form a reverse bias (reverse bias) or make P-N tie not conducting (across the voltage of PN junction less than conducting voltage), electric current can be limited in inner and outstanding film 201 current potentials of may command of resistor assembly, further, see through topology layout design like this and arrangement, can reach the purpose of floating when improving piezoresistive transducer 4 output signals.
The 3rd embodiment
Please be simultaneously with reference to Fig. 5 A and Fig. 5 B, according to a kind of semiconductor pressure resistance type sensor 5 of third embodiment of the invention, it comprises semiconductor base material 20, an insulating barrier 23, at least one pressure drag assembly 21, at least one interior coupling assembling 24, a conductive material layer 22 and a shielding layer (Shield layer) 26.A semiconductor pressure resistance type sensor 5 and a circuit 3 electrically connect, and circuit 3 for example is a bridge circuit or a temperature-compensation circuit.Shown in Fig. 5 B, semiconductor pressure resistance type sensor 2 more comprise a p type doped region 25 be arranged at 22 and outstanding film 201 between, in the present embodiment, p type doped region 25 relative 22 is arranged in the outstanding film 201, and form ohmic contact or Schottky contacts by the opening 232 of insulating barrier 23 and 22, wherein p type doped region 25 is a high-dopant concentration, i.e. p+ type doped region.In the present embodiment, architectural feature, material, set-up mode, annexation and the function of semiconductor substrate 20, pressure drag assembly 21, interior coupling assembling 24, insulating barrier 23 and circuit 3 is all as described in first embodiment, so repeat no more.
The difference of present embodiment and first and second embodiment is that the semiconductor pressure resistance type sensor 5 of present embodiment has conductive material layer 22 and shielding layer 26 simultaneously.Conductive material layer 22 is arranged on the insulating barrier 23, and conductive material layer 22 and outstanding film 201 are directly contacted to electrically connect, and is original base material dopant level (N-) and hang film 201.The mode that conductive material layer 22 contacts with outstanding film 201 can be ohmic contact (ohmic contact) or Schottky contacts (Schottky contact), shown in Fig. 5 A.In addition, the semiconductor pressure resistance type sensor 5 of present embodiment comprises that more a shielding layer 26 is arranged on the insulating barrier 23, and cover insulating barrier 23 to small part, wherein the material of shielding layer 26 is nonisulated material, and its thermal coefficient of expansion (thermalcoefficient of expansion, TCE) preferably be between-15ppm/ ℃ to+15ppm/ ℃, to avoid shielding layer 26 to cross ambassador's semiconductor pressure resistance type sensor 5 because of thermal expansion coefficient difference bigger output at zero point (offset) and thermal gauge lattice (as TCO) are arranged, also can avoid the generation of mechanical hysteresis (mechanical hysteresis) phenomenon with semiconductor substrate 20.In this, as shown in Figure 5, shielding layer 26 is not conducted with conductive material layer 22, but according to the design of circuit, shielding layer 26 also can electrically connect mutually with conductive material layer 22.
Perhaps, shown in Fig. 5 B, the zone of conductive material layer 22 contacts is highly doped matter concentration district (p+) 25.P type doped region 25 between conductive material layer 22 and outstanding film 201, conductive material layer 22 is arranged in the outstanding film 201 relatively, and forms ohmic contact or Schottky contacts by the opening 232 of insulating barrier 23 with conductive material layer 22.P type doped region 25 used p type dopants are high-dopant concentration, so be p+ type doped region.What this need pay special attention to be, this p+ type doped region 25 does not need to add extra operation to be reached, and can be in forming carries out simultaneously in the operation of coupling assembling 24.
No matter be Fig. 5 A or the semiconductor pressure resistance type sensor 5 of Fig. 5 B, all can see through the suitable current potential that a voltage V4+ controls outstanding film (N-) 201 that applies, make the unlikely drift of current potential of outstanding film (N-) 201.In addition, suitably cover through the pressure drag assembly 21 of shielding layer 26, and apply voltage V3+,, make the unlikely drift in time of surface potential to stablize the surface potential of pressure drag assembly 21 tops with insulating barrier 23 belows.Wherein voltage V3+, V4+ can be bridge circuit voltage (ex.VB+) or other voltage that is higher than transducer bridge-type circuit voltage (ex. is from the Vs+ of temperature-compensation circuit) of pressure drag assembly 21, make the pressure drag assembly 21 and the face that connects of outstanding film 201 form a reverse bias (reverse bias) or make P-N tie not conducting (connecing the voltage of face less than conducting voltage) across PN, electric current can be limited in inner and outstanding film 201 current potentials of may command of resistor assembly, further, see through topology layout design like this and arrangement, can reach the purpose of floating when improving piezoresistive transducer 5 output signals.
Method of operation according to a kind of semiconductor pressure resistance type sensor of preferred embodiment of the present invention, it is applied to the semiconductor pressure resistance type sensor 2 shown in Fig. 3 A and Fig. 3 B, method of operation comprises the following steps: to apply a voltage V1 in conductive material layer 22 and apply a voltage V0 in circuit 3, the value that cuts voltage V1 gained as voltage V0 is during less than the conducting voltage between pressure drag assembly 21 and the outstanding film 201, pressure drag assembly 21 just can form reverse bias or make P-N tie not conducting with the face that connects of outstanding film 201, and then reach electric current is limited in pressure drag assembly 21 inside, can reach the purpose of floating when improving piezoresistive transducer 2 output signals.Wherein, voltage V0 or voltage V1 can be the bridge circuit of connection semiconductor pressure resistance type sensor 2 or the voltage of temperature-compensation circuit, or are higher than the voltage of bridge circuit or temperature-compensation circuit.
Method of operation according to another semiconductor pressure resistance type sensor of preferred embodiment of the present invention, it is applied to the semiconductor pressure resistance type sensor 4 shown in Fig. 4 A and Fig. 4 B, method of operation comprises the following steps: to apply a voltage V2 in shielding layer 26 and apply a voltage V0 in circuit 3, the value that cuts voltage V1 gained as voltage V0 is during less than the conducting voltage between pressure drag assembly 21 and the outstanding film 201, pressure drag assembly 21 just can form reverse bias or make P-N tie not conducting with the face that connects of outstanding film 201, utilize the voltage V2 that puts on shielding layer 26 to stablize the surface potential of pressure drag assembly 21 tops simultaneously, and then reach electric current is limited in pressure drag assembly 21 inside, can reach the purpose of floating when improving piezoresistive transducer 4 output signals.Wherein voltage V0 or voltage V2 for example are the voltage of bridge circuit or temperature-compensation circuit, or are higher than the voltage of bridge circuit or temperature-compensation circuit.
Method of operation according to the another kind of semiconductor pressure resistance type sensor of preferred embodiment of the present invention, it is applied to the semiconductor pressure resistance type sensor 5 shown in Fig. 5 A and Fig. 5 B, method of operation comprises the following steps: to apply a voltage V4 in conductive material layer 22, apply a voltage V0 in circuit 3 and apply a voltage V3 in shielding layer 26, the value that cuts voltage V4 gained as voltage V0 is during less than the conducting voltage between pressure drag assembly 21 and the outstanding film 201, pressure drag assembly 21 just can form reverse bias or make P-N tie not conducting with the face that connects of outstanding film 201, and then reach electric current is limited in pressure drag assembly 21 inside, can reach the purpose of floating when improving piezoresistive transducer 5 output signals.Wherein voltage V0, voltage V3 or voltage V4 for example are the voltage of bridge circuit or temperature-compensation circuit, or are higher than the voltage of bridge circuit or temperature-compensation circuit.
In sum, semiconductor pressure resistance type sensor and method of operation thereof because of foundation the present invention, it utilizes the outstanding film of a conductive material layer or a shielding layer and semiconductor substrate to electrically connect, wherein conductive material layer and shielding layer are made of conductive material and nonisulated material respectively, with this semiconductor pressure resistance type sensor framework in a circuit, by putting on conductive material layer or shielding layer appropriate voltage, make it and put on the conducting voltage that voltage difference on the circuit is lower than pressure drag assembly and outstanding film, so pressure drag assembly and outstanding the connecing not conducting of face of film and limit electric current in the pressure drag assembly, and then improve the phenomenon that pressure drag assembly output signal drifts about in time.Compare with known techniques, the present invention does not need on semiconductor substrate to form the semiconductor doping district with pressure drag assembly different types, so the step of effectively simplifying working process reduces manufacturing cost, and then improves the accuracy of semiconductor pressure resistance type sensor measurement.
The above only is an illustrative, but not is restricted person.Any spirit and category that does not break away from the present invention, and to its equivalent modifications of carrying out or change, all should be contained in the attached claims in back.
Claims (20)
1, a kind of semiconductor pressure resistance type sensor electrically connects with a circuit, and this semiconductor pressure resistance type sensor comprises:
The semiconductor base material comprises an outstanding film and a base material, and this base material is adjacent to this outstanding film periphery;
At least one pressure drag assembly is arranged in this outstanding film, and electrically connects with this circuit; And
One conductive material layer electrically connects with this outstanding film.
2, semiconductor pressure resistance type sensor according to claim 1 more comprises a p type doped region, is arranged in this outstanding film, and contacts with this conductive material layer.
3, as the semiconductor pressure resistance type sensor as described in the claim 2, wherein this conductive material layer and this p type doped region form ohmic contact or Schottky contacts.
4, semiconductor pressure resistance type sensor according to claim 1, wherein this conductive material layer forms ohmic contact or Schottky contacts with this outstanding film.
5, semiconductor pressure resistance type sensor according to claim 1 more comprises an insulating barrier, is arranged on this semiconductor substrate and covers this pressure drag assembly.
6, as the semiconductor pressure resistance type sensor as described in the claim 5, wherein this insulating barrier comprises silica (silicon oxide), silicon nitride (silicon nitride), silicon oxynitride (silicon oxynitride) etc. or its combination.
7, as the semiconductor pressure resistance type sensor as described in the claim 5, more comprise a shielding layer, be arranged on this insulating barrier, and cover this insulating barrier, and this shielding layer and this conductive material layer electrically connect to small part.
8, a kind of semiconductor pressure resistance type sensor electrically connects with a circuit, and this semiconductor pressure resistance type sensor comprises:
The semiconductor base material comprises an outstanding film and a base material, and this base material is adjacent to this outstanding film periphery;
At least one pressure drag assembly is arranged in this outstanding film, and electrically connects with this circuit;
One insulating barrier is arranged on this semiconductor substrate and covers this pressure drag assembly; And
One shielding layer is arranged on this insulating barrier, and covers this insulating barrier to small part, and electrically connects with this outstanding film.
9, as the semiconductor pressure resistance type sensor as described in the claim 8, more comprise a p type doped region, be arranged in this outstanding film, and contact with this shielding layer.
10, as the semiconductor pressure resistance type sensor as described in the claim 9, wherein this shielding layer and this p type doped region form ohmic contact or Schottky contacts.
11, as the semiconductor pressure resistance type sensor as described in the claim 8, wherein this shielding layer with should form ohmic contact or Schottky contacts by outstanding film.
12, as the semiconductor pressure resistance type sensor as described in the claim 8, wherein the material of this shielding layer is nonisulated material.
13, as the semiconductor pressure resistance type sensor as described in claim 7 or 8, wherein the thermal coefficient of expansion of this shielding layer is between-15ppm/ ℃ to+15ppm/ ℃.
14, as the semiconductor pressure resistance type sensor as described in claim 1 or 8, more comprise at least one in coupling assembling, electrically connect with this circuit and this pressure drag assembly.
15, as the semiconductor pressure resistance type sensor as described in claim 1 or 8, should outstanding film be n type doped region wherein, this pressure drag assembly is a p type doped region.
16, as the semiconductor pressure resistance type sensor as described in claim 1 or 8, wherein this pressure drag assembly and this circuit electrically connect, and this circuit is a bridge circuit or a temperature-compensation circuit.
17, as the semiconductor pressure resistance type sensor as described in claim 1 or 8, wherein this insulating barrier comprises silica (silicon oxide), silicon nitride (silicon nitride), silicon oxynitride (silicon oxynitride) etc. or its combination.
18, a kind of method of operation of semiconductor pressure resistance type sensor is applied to comprise the following steps: as the semiconductor pressure resistance type sensor as described in claim 1 or 7
Apply one first voltage in this circuit; And
Apply one second voltage in this conductive material layer;
Wherein when value that this first voltage cuts this second voltage gained less than this pressure drag assembly and should outstanding film between a conducting voltage time, this pressure drag assembly with one of should outstanding film connect face and just can form a reverse bias or make this connect not conducting of face.
19, as the method for operation as described in the claim 18, more comprise: apply a tertiary voltage in this shielding layer, this tertiary voltage is in order to stablize one of this pressure drag assembly top surface potential.
20, a kind of method of operation of semiconductor pressure resistance type sensor is applied to comprise the following steps: as the semiconductor pressure resistance type sensor as described in the claim 8
Apply one first voltage in this circuit; And
Apply one second voltage in this shielding layer;
Wherein when value that this first voltage cuts this second voltage gained less than this pressure drag assembly and should outstanding film between a conducting voltage time, this pressure drag assembly with one of should outstanding film connect face and just can form a reverse bias or make this connect not conducting of face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610005063 CN101005097A (en) | 2006-01-17 | 2006-01-17 | Semiconductor pressure resistance type sensor and its operation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610005063 CN101005097A (en) | 2006-01-17 | 2006-01-17 | Semiconductor pressure resistance type sensor and its operation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101005097A true CN101005097A (en) | 2007-07-25 |
Family
ID=38704103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610005063 Pending CN101005097A (en) | 2006-01-17 | 2006-01-17 | Semiconductor pressure resistance type sensor and its operation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101005097A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102336391A (en) * | 2010-06-22 | 2012-02-01 | 罗伯特·博世有限公司 | Method for manufacturing piezoresistive sensor device and sensor device |
| CN104280182A (en) * | 2013-07-02 | 2015-01-14 | 阿尔卑斯电气株式会社 | Physical quantity sensor |
| CN110330675A (en) * | 2019-06-19 | 2019-10-15 | 天津市职业大学 | A kind of preparation method of pressure-sensitive film, pressure-sensitive film and pressure sensor |
| CN117030078A (en) * | 2023-08-10 | 2023-11-10 | 无锡胜脉电子有限公司 | Silicon force sensitive chip and preparation method and packaging method thereof |
-
2006
- 2006-01-17 CN CN 200610005063 patent/CN101005097A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102336391A (en) * | 2010-06-22 | 2012-02-01 | 罗伯特·博世有限公司 | Method for manufacturing piezoresistive sensor device and sensor device |
| CN102336391B (en) * | 2010-06-22 | 2015-12-16 | 罗伯特·博世有限公司 | For the manufacture of method and the sensor device of the sensor device of pressure drag |
| CN104280182A (en) * | 2013-07-02 | 2015-01-14 | 阿尔卑斯电气株式会社 | Physical quantity sensor |
| CN104280182B (en) * | 2013-07-02 | 2017-01-04 | 阿尔卑斯电气株式会社 | Physical quantity transducer |
| CN110330675A (en) * | 2019-06-19 | 2019-10-15 | 天津市职业大学 | A kind of preparation method of pressure-sensitive film, pressure-sensitive film and pressure sensor |
| CN117030078A (en) * | 2023-08-10 | 2023-11-10 | 无锡胜脉电子有限公司 | Silicon force sensitive chip and preparation method and packaging method thereof |
| CN117030078B (en) * | 2023-08-10 | 2024-03-15 | 无锡胜脉电子有限公司 | Silicon force sensitive chip and preparation method and packaging method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102235925B (en) | There is capacitance pressure transducer, and the manufacture method thereof of vertical electric feedthrough | |
| CN101349602B (en) | High doping point electrode SOI piezoresistance type pressure sensor and manufacturing method thereof | |
| US10955304B2 (en) | N-implant electrical shield for piezo-resistor sensor | |
| JP3344138B2 (en) | Semiconductor composite sensor | |
| WO2012080811A1 (en) | Semiconductor pressure sensor | |
| CN102770743A (en) | Pressure sensor | |
| CN107316838B (en) | Array substrate, manufacturing method, touch display panel and touch display device | |
| CN104755895A (en) | Pressure sensor comprising a cover layer | |
| US10558286B2 (en) | Array substrate, touch display panel, and touch display device thereof | |
| JP5853169B2 (en) | Semiconductor pressure sensor | |
| CN103344374A (en) | Hidden-type MEMS pressure sensor sensitive chip and manufacturing method thereof | |
| CN105742334A (en) | Organic electroluminescence display device and display apparatus | |
| CN116026501B (en) | Pressure sensor and manufacturing method thereof | |
| CN101005097A (en) | Semiconductor pressure resistance type sensor and its operation method | |
| CN112880883A (en) | Pressure sensor and method for manufacturing the same | |
| CN104870960A (en) | Sensor comprising a substrate | |
| CN208045494U (en) | Fingerprint Identification sensor and fingerprint identification device | |
| US6933582B2 (en) | Semiconductor sensor having a diffused resistor | |
| CN101694409A (en) | Method for manufacturing all-silica pressure chips of SOI oil pressure sensor | |
| US20120125113A1 (en) | Pressure transducer having structure for monitoring surface charge | |
| CN216410458U (en) | Pressure sensor | |
| CN2938404Y (en) | Test device for measuring PN junction current | |
| JP2012127792A (en) | Semiconductor pressure sensor | |
| CN201259453Y (en) | SOI pressure resistant pressure sensor for high-doped point electrode | |
| JP2019002781A (en) | Pressure sensor and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20070725 |