CN105742334A - Organic electroluminescence display device and display apparatus - Google Patents
Organic electroluminescence display device and display apparatus Download PDFInfo
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- CN105742334A CN105742334A CN201610286737.3A CN201610286737A CN105742334A CN 105742334 A CN105742334 A CN 105742334A CN 201610286737 A CN201610286737 A CN 201610286737A CN 105742334 A CN105742334 A CN 105742334A
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Abstract
The invention relates to an organic electroluminescence display device and a display apparatus. The display device comprises a substrate, a transistor circuit layer and a light emitting device layer, wherein the transistor circuit layer and the light emitting device layer are successively arranged at the first side of the substrate in a thickness direction. The surface of the substrate is provided with a pressure sensing area. The organic electroluminescence display device further comprises a pressure-sensitive resistance layer which is arranged at the pressure sensing area. The pressure-sensitive resistance layer which is arranged at the pressure sensing area is connected with two conductor structures at two area boundaries, thereby respectively forming a first connecting end and a second connecting end of a first pressure-sensitive resistor of the pressure sensing area. The first connecting end and the second connecting end of the first pressure-sensitive resistor are used for connecting with a pressure detecting circuit so that the pressure detecting circuit acquires a pressure sensing signal according to an electric signal between two ends of the first pressure-sensitive resistor. According to the organic electroluminescence display device and the display apparatus, the pressure sensor can be integrated in the display device, thereby satisfying application requirements in multiple aspects of 3D touch control, bending testing, etc.
Description
Technical field
The present invention relates to Display Technique field, especially relate to a kind of organic elctroluminescent device and display device.
Background technology
At present, CMOS-OLED (ComplementaryMetalOxideSemiconductor-OrganicLight-Emitti ngDiode) display device is in development, its core is to adopt CMOS technology to make OLED display device on a silicon substrate, the CMOS-OLED display device produced has resolution advantages of higher, it is possible to be applied to the display of microdevice.
For many-sided application demands such as 3D touch-control, curved detection, CMOS-OLED display device needs integrated pressure detection function.To this, the common way of prior art is to attach pressure transducer and the protective layer of stratiform in the bottom surface of the device made or end face, thus can be the certain thickness of device increase.Simultaneously, although by integrated for pressure transducer to the reduction being beneficial to thickness of detector in the middle of CMOS-OLED display device, but there is presently no corresponding implementation.
Summary of the invention
For defect of the prior art, the present invention provides a kind of organic elctroluminescent device and display device, it is possible to is integrated in display device by pressure transducer, meets many-sided application demands such as 3D touch-control, curved detection.
First aspect, organic elctroluminescent device provided by the invention includes underlay substrate, and through-thickness is successively set on the transistor circuit layer of the first side and the light emitting device layer of described underlay substrate, it is characterized in that, the surface of described underlay substrate is provided with at least one pressure-sensing region；Described organic elctroluminescent device also includes the varistor layer being arranged at least one pressure-sensing region described；
The varistor layer being arranged on arbitrary described pressure-sensing region connects two conductor structures respectively at two zone boundaries place, to form the first link and second link of first varistor in this pressure-sensing region respectively；
First link of described first varistor and the second link are for Bonding pressure testing circuit respectively, so that described pressure detection circuit obtains pressure sensor signal according to the signal of telecommunication at the two ends of described first varistor.
Optionally, described underlay substrate is formed by semi-conducting material；Piezoresistive material processing technology that described varistor layer is carried out at least one pressure-sensing region described by described underlay substrate and formed.
Optionally, described conductor structure is processed by the conductorization that described underlay substrate is carried out in corresponding region and is formed.
Optionally, described varistor layer is additionally arranged at least one the pressure reference region on the surface of described underlay substrate；At least side in described pressure reference region is provided with supporting construction；Described supporting construction undertakes pressure experienced on its thickness direction for replacing the varistor layer in described pressure reference region；
The varistor layer being arranged on arbitrary described pressure reference region connects two conductor structures respectively at two zone boundaries place, to form the first link and second link of second varistor in this pressure reference region；
First link of described second varistor and the second link are for connecting described pressure detection circuit respectively, so that described pressure detection circuit using the signal of telecommunication at the two ends of described second varistor as benchmark, obtain pressure sensor signal according to the signal of telecommunication at the two ends of described first varistor.
Optionally, described pressure-sensing region is arranged at the surface of the second side of described underlay substrate；Described pressure reference region is arranged at the surface of the first side of described underlay substrate.
Optionally, described pressure-sensing region and described pressure reference region are arranged at the surface of the first side of described underlay substrate；It is additionally provided with dielectric spacer layer between described varistor layer and described transistor circuit layer；First link of described first varistor and the first link of described second varistor connect in described transistor circuit layer for connecting the conductor fig of default bias voltage each through the via in described dielectric spacer layer.
Optionally, the form with transistor circuit of at least part of circuit structure in described pressure detection circuit is arranged in described transistor circuit layer；Second link of described first varistor and the second link of described second varistor are to be connected to the pressure detection circuit in described transistor circuit layer in the way of interlevel via.
Optionally, the pressure detection circuit in described transistor circuit layer includes the first transistor, transistor seconds, third transistor and electric capacity；Wherein,
The grid of described the first transistor connects scan signal, source electrode and second link connecting described first varistor in drain electrode, and another connects the first end of described electric capacity；
The grid of described transistor seconds connects the second scanning signal, source electrode and second link connecting described second varistor in drain electrode, and another connects the first end of described electric capacity；
The grid of described third transistor connects described second scanning signal, source electrode and a connection reset bias voltage in drain electrode, and another connects the second end of described electric capacity.
Optionally, described pressure reference region is arranged on outside the territory, effective display area of described organic elctroluminescent device.
Second aspect, display device provided by the invention includes any of the above-described described organic elctroluminescent device.
In organic elctroluminescent device provided by the invention and display device, underlay substrate has pressure-sensing region, based on the varistor layer in pressure-sensing region and the pressure detection circuit that is connected with the first varistor in this varistor layer, the change in resistance of the first varistor in varistor layer can be determined according to the output of pressure detection circuit, and then determine the pressure size suffered by pressure-sensing region, it is achieved the detection of pressure.Owing to varistor layer is integrated in display device by the present invention, thus varistor layer can adopt the processing technology identical with transistor circuit layer and light emitting device layer to be formed so that the thickness of device is less, and the fabrication cycle of device entirety is also comparatively short.Further, owing to varistor layer is connected with pressure detection circuit by the conductor structure at zone boundary place, relative to sandwich structure namely in the mode of the upper surface of varistor, lower surface extraction link, it is possible to reduce the thickness of device further.
Accompanying drawing explanation
Can be more clearly understood from inventive feature information and advantage by reference accompanying drawing, accompanying drawing is schematic and should not be construed as and the present invention is carried out any restriction, in the accompanying drawings:
Fig. 1 illustrates the generalized section according to organic elctroluminescent device one embodiment of the present invention；
Fig. 2 illustrates a kind of set-up mode schematic diagram of pressure-sensing region, pressure reference region, pressure detection circuit in organic elctroluminescent device one embodiment of the present invention；
Fig. 3 illustrates the another kind of set-up mode schematic diagram of pressure-sensing region, pressure reference region, pressure detection circuit in organic elctroluminescent device one embodiment of the present invention；
Fig. 4 illustrates that in organic elctroluminescent device one embodiment of the present invention, the one in pressure-sensing region and pressure reference region arranges position view；
Fig. 5 illustrates the waveform diagram of scan signal in organic elctroluminescent device one embodiment of the present invention, the second scanning signal, primary nodal point and secondary nodal point；
Accompanying drawing labelling:
1-underlay substrate；The varistor layer in 2-pressure-sensing region；3-transistor circuit layer；For connecting the conductor fig of default bias voltage in 31-transistor circuit layer；4-light emitting device layer；51, the conductor structure at the zone boundary place in 52-pressure-sensing region；6-pressure detection circuit；The varistor layer in 7-pressure reference region；81, the conductor structure at the zone boundary place in 82-pressure reference region；9-supporting construction.
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
One embodiment of the invention provides a kind of organic elctroluminescent device, as shown in Figure 1, 2, this display device includes underlay substrate 1 and through-thickness is successively set on the transistor circuit layer 3 of the first side and the light emitting device layer 4 of underlay substrate 1, and underlay substrate 1 is provided with a pressure-sensing region on the surface of the first side；This display device also includes the varistor layer 2 (for illustrative clarity, the setting area of not clear and definite varistor layer 2 in Fig. 1) being arranged on this pressure-sensing region；The varistor layer 2 being arranged on this pressure-sensing region connects two conductor structures 51,52 respectively at two zone boundaries place, to form the first link and second link of first varistor in this pressure-sensing region respectively；First link of this first varistor and the second link are for Bonding pressure testing circuit respectively, so that pressure detection circuit 6 obtains pressure sensor signal according to the signal of telecommunication at the two ends of the first varistor.
Wherein, what conductor structure 51 was formed is the first link of the first varistor, and what conductor structure 52 was formed is the second link of the first varistor.
It will be appreciated that light emitting device layer refers to Rotating fields that can be luminous under the driving of voltage or electric current herein, and transistor circuit layer refers to the Rotating fields providing the transistor circuit of voltage or electric current to be formed for light emitting device layer herein.
In the organic elctroluminescent device that the present embodiment provides, underlay substrate 1 has pressure-sensing region, based on the varistor layer 2 in pressure-sensing region and the pressure detection circuit 6 that is connected with the first varistor in this varistor layer 2, the change in resistance of the first varistor in varistor layer 2 can be determined according to the output of pressure detection circuit 6, and then determine the pressure size suffered by pressure-sensing region, it is achieved the detection of pressure.Owing to varistor layer 2 is integrated in display device by the present invention, thus varistor layer 2 can adopt the processing technology identical with transistor circuit layer 3 and light emitting device layer 4 to be formed so that the thickness of device is less, and the fabrication cycle of device entirety is also comparatively short.Additionally, due to varistor layer 2 is connected with pressure detection circuit 6 by the conductor structure 51,52 at zone boundary place, relative to sandwich structure namely in the mode of the upper surface of varistor, lower surface extraction link, it is possible to reduce the thickness of device further.
In the specific implementation, the underlay substrate 1 in the present embodiment can be formed by semi-conducting material, piezoresistive material processing technology that the underlay substrate 1 that varistor layer 2 can be formed by semi-conducting material carries out in pressure-sensing region and formed.Wherein, piezoresistive material processing technology can adopt various ways, can select according to practical situation when practical application, for instance, is gently adulterated in the pressure-sensing region on the surface of underlay substrate 1, to form varistor layer 2.Owing to forming required varistor layer 2 on the underlay substrate 1 that semi-conducting material is formed here, it is thus advantageous to the reduction of display device thickness.
In the specific implementation, for the underlay substrate 1 adopting semi-conducting material to be formed, conductor structure can be processed by the conductorization that underlay substrate 1 is carried out in corresponding region and be formed.Wherein, conductorization processes can adopt various ways, can select according to practical situation when practical application, for instance, the zone boundary place in pressure-sensing region in underlay substrate 1 is carried out heavy doping, with the conductor structure 51,52 that formation is connected with varistor layer 2.Form conductor structure 51,52 owing to here semi-conducting material to be carried out conductor process, therefore do not increase the electrical connection of the first varistor and the pressure detection circuit 6 realizing in varistor layer 2 on the basis of thickness.
Will be understood that, although the quantity in pressure-sensing region is one in the present embodiment, but in some alternative embodiments, the quantity in pressure-sensing region need not necessarily be one, can also being such as two, three etc., concrete quantity can be arranged as required to.nullSuch as，As shown in Figure 3，When the quantity in pressure-sensing region is two，Each pressure-sensing region is provided with varistor layer 2，And the varistor layer 2 in each pressure-sensing region connects two conductor structures 51 respectively at two zone boundaries place、52，The conductor structure 52 of the varistor layer 2 being positioned at left side can be connected with the conductor structure 51 of the varistor layer 2 on right side，So that two varistor layers 2 are connected，Then the conductor structure 51 of the varistor layer 2 in left side is as the first link of varistor after series connection、The conductor structure 52 of the varistor layer 2 on right side is connected with pressure detection circuit 6 as the second link of varistor after series connection，To realize the pressure detecting of the display device to larger area，Its technical scheme also is able to the basic object reaching to be integrated in display device by pressure transducer，Therefore also should fall within protection scope of the present invention.
Will be understood that, although pressure-sensing region is arranged on the surface of the first side of underlay substrate 1 in the present embodiment, that is, pressure-sensing region and transistor circuit layer 3, light emitting device layer 4 is arranged on the same side of underlay substrate 1, but in some alternative embodiments, pressure-sensing region can also be arranged on the surface of the second side at underlay substrate 1, namely pressure-sensing region and transistor circuit layer 3 and light emitting device layer 4 are arranged on the not homonymy of underlay substrate 1, such as, as shown in Figure 4, the varistor layer 2 in pressure-sensing region and the OLED formed by transistor circuit layer 3 and light emitting device layer 4 lay respectively at the both sides of underlay substrate 1, its technical scheme also is able to the basic object reaching to be integrated in display device by pressure transducer, therefore also should fall within protection scope of the present invention.
Will be understood that, although pressure-sensing region is arranged on the territory, effective display area of underlay substrate 1 in the present embodiment, in some alternative embodiments, it is also possible to pressure-sensing region is arranged on outside the territory, effective display area (ActiveArea, AA) on underlay substrate 1 with reference to Fig. 3.For pressure-sensing region being arranged on the display device outside territory, effective display area; the pressure extruding to territory, effective display area can be reduced; be conducive to the service life of prolonged display part; its technical scheme also is able to the basic object reaching to be integrated in display device by pressure transducer, therefore also should fall within protection scope of the present invention.
Another embodiment of the present invention provides a kind of organic elctroluminescent device, the present embodiment is on the basis of above-described embodiment, the mode with reference to varistor that arranges is adopted to eliminate owing to the first varistor changes produced pressure detecting error i.e. temperature drift because of the change of temperature, to improve the precision of pressure detecting.With reference to Fig. 2, above-mentioned the mode with reference to varistor is set particularly as follows:
The surface of underlay substrate 1 has multiple pressure reference region, being provided with the varistor layer 7 that pressure-sensitive resistive layer 2 adopts identical processing technology to make with in pressure-sensing region in pressure reference region, at least side in each pressure reference region is provided with supporting construction 9；Supporting construction 9 undertakes pressure experienced on its thickness direction for replacing the varistor layer 7 in this pressure reference region；The varistor layer 7 being arranged on arbitrary pressure reference region connects two conductor structures 81,82 respectively at two zone boundaries place, to form the first link and second link of second varistor in this pressure reference region；The series connection of the second varistor in each pressure reference region is realized by the first link and the second link, the varistor the first link at two ends formed after series connection and the second link are for Bonding pressure testing circuit 6, so that the signal of telecommunication at the two ends of varistor that pressure detection circuit 6 is formed after being connected by each second varistor is as benchmark, obtain pressure sensor signal according to the signal of telecommunication at the two ends of the first varistor.
Wherein, the conductor structure 81,82 in pressure reference region can adopt the processing technology that the conductor structure 51,52 with pressure-sensing region is identical to be formed.
Will be understood that, for ensureing that supporting construction 9 can replace the varistor layer 7 in this pressure reference region to undertake pressure experienced on its thickness direction, the upper surface of the varistor layer 7 that the position of supporting construction 9 upper surface should be not less than in pressure reference region, the lower surface of supporting construction 9 can flush with the lower surface of the varistor layer 7 in pressure reference region, it is also possible to lower than the lower surface of the varistor layer 7 in pressure reference region.The position of supporting construction 9 should be arranged on outside pressure reference region, certainly it can not apart from pressure reference region too far, and arrange multiple as far as possible, multiple supporting constructions 9 can adopt encloses the surrounding being located at pressure reference region, can also be arranged between adjacent pressure reference region, to ensure its supporting role.
The display device provided due to the present embodiment also includes pressure reference region and supporting construction 9, when there being pressure to be applied on display device, support due to supporting construction 9, the second varistor in pressure reference region can be avoided to be squeezed, the resistance that thus can keep the second varistor is constant, and then the signal of telecommunication at the two ends of varistor formed after being connected by each second varistor is as reference, the interference of the environmental factorss such as temperature can be avoided when carrying out pressure detecting according to the signal of telecommunication at the first varistor two ends, improve the precision of pressure detecting.
In the present embodiment, pressure reference region is arranged on outside the territory, effective display area of described organic elctroluminescent device, to reduce the extruding that pressure reference region is subject to.Certainly; in some alternative embodiments; pressure reference region not necessarily need be arranged on outside territory, effective display area; when pressure reference region is arranged within territory, effective display area; its technical scheme also can reach the basic object being integrated in display device by pressure transducer, therefore also should fall within protection scope of the present invention.
In the specific implementation, the material of supporting construction 9 can select as required, and the present embodiment does not limit, for instance adopts the polystyrene of high rigidity.
Will be understood that, the signal of telecommunication for the two ends of the varistor formed after ensureing the series connection of each second varistor of pressure has reference value, in pressure reference region, the second varistor is with the first varistor in pressure-sensing region except processing technology is identical, also should ensure that the gross area of the gross area of the first varistor and the second varistor is identical as far as possible.Additionally, although the quantity in pressure reference region is multiple in the present embodiment, but when practical application, the quantity in pressure reference region may also be only one, as long as the processing technology of its second varistor and area are not corresponding identical with the processing technology of the first varistor in pressure detecting region and Line Integral so that it is have reference value.
In the specific implementation, pressure reference region and pressure-sensing region are specifically located at which side of underlay substrate 1 can be configured as required, and the present embodiment does not limit, and the optional set-up mode of two of which is:
(1) pressure reference region may be provided at the surface of the first side of underlay substrate 1, pressure-sensing region may be provided at the surface of the second side of underlay substrate 1, i.e. pressure reference region and transistor circuit layer 3, light emitting device layer 4 is arranged on the same side of underlay substrate 1, and pressure-sensing region is arranged on the back side of underlay substrate 1, so more supporting construction 9 can be set in the first side of underlay substrate 1, reduce the stress deformation that display device produces due to pressing, simultaneously when the second side of underlay substrate 1 is applied pressure, can reduce in the pressure reference region on the first side by the second pressure-sensitive impact, improve accuracy in detection；
(2) pressure-sensing region and pressure reference region are arranged at the surface of the first side of underlay substrate 1, varistor layer 2 in such pressure-sensing region and the varistor layer 7 in pressure reference region can be that same layer is formed, owing to can pass through to make in one-time process, therefore there is the advantage reducing technological process, shortening fabrication cycle.
Plant set-up mode for (2nd), dielectric spacer layer can be provided with between the varistor layer 2 in pressure-sensing region and the varistor layer 7 in pressure reference region and described transistor circuit layer 3, to realize the isolation between pressure detecting and luminescence display；Meanwhile, the first link of the first varistor and the first link of the second varistor connect in transistor circuit layer 3 for connecting the conductor fig 31 of default bias voltage each through the via in dielectric spacer layer.Default bias voltage is provided here with the first link that the original structure in display device is the first varistor and the second varistor, and the mode connected by via is by integrated to display device for the part connecting line of pressure detection circuit 6, there is the advantage reducing materials and operation.Wherein, default bias voltage can be the running voltage of varistor.
Set-up mode is planted for (2nd), at least part of circuit structure in pressure detection circuit 6 can be arranged in transistor circuit layer 3 with the form of transistor circuit, and wherein the second link of the first varistor and the second link of the second varistor can be connected to the pressure detection circuit 6 in transistor circuit layer 3 in the way of interlevel via.Here, the part-structure of pressure detection circuit 6 is integrated in transistor circuit layer 3, it is made to combine with original circuit structure of transistor circuit layer 3, and, the mode connected by via realizes the connection between the second link and the pressure detection circuit 6 of the first varistor and the second varistor, has the advantage reducing materials and operation.
In the specific implementation, no matter pressure reference region and pressure-sensing region are arranged on which side of underlay substrate 1, all do not affect the concrete structure of pressure detection circuit 6, the concrete structure of pressure detection circuit 6 can select as required, the present embodiment does not limit, as long as its two end signals that can realize according to the first varistor and the second varistor obtain pressure signal, introduce the optional structure of one therein below with reference to Fig. 3:
Pressure detection circuit 6 includes the first transistor T1, transistor seconds T2, third transistor T3 and electric capacity CS, wherein:
The grid of the first transistor T1 connects scan signal S1, source electrode and second link connecting the first varistor in drain electrode, and another connects first end of electric capacity CS；
The grid of transistor seconds T2 connects the second scanning signal S2, source electrode and second link connecting the second varistor in drain electrode, and another connects first end of electric capacity CS；
The grid of third transistor T3 connects the second scanning signal S2, source electrode and a connection reset bias voltage in drain electrode, and another connects second end of electric capacity CS.
Owing to the grid of transistor seconds T2 and the grid of third transistor T3 are all connected with the second scanning signal S2, therefore opening or closing of transistor seconds T2 and third transistor T3 is to synchronize.Here, using first end of electric capacity CS and the first transistor T1, transistor seconds T2 connection node as primary nodal point A, using the connection node of second end of electric capacity CS and third transistor T3 as secondary nodal point B, and for periodic scan signal S1, the S2 shown in Fig. 5, the Cleaning Principle of pressure detection circuit 6 is illustrated:
In each cycle T, pressure detection circuit 6 can experience the following four stage:
First stage t1: when a cycle starts, two scannings signal S1, S2 are inactive level signal low level, and three transistors are in off state, and the voltage signal of primary nodal point A and secondary nodal point B is 0；
Second stage t2: when the second scanning signal S2 is changed into significant level signal-high level, transistor seconds T2 and third transistor T3 all opens, electric capacity CS is charged by the second link of the second varistor, making the output voltage V0 of the voltage of primary nodal point A and the second varistor identical, secondary nodal point B set is 0 by the reset bias voltage that third transistor T3 connects simultaneously；
Phase III t3: when the second scanning signal S2 all becomes inactive level signal, the voltage of primary nodal point A and secondary nodal point B remains unchanged；
Fourth stage t4: when scan signal S1 becomes significant level signal, the first transistor T1 opens, electric capacity CS is charged by the second link of the first varistor, make the output voltage V1 of the voltage of primary nodal point A and the first varistor identical, now namely the voltage of secondary nodal point B by the difference (V1-V0) between 0 output voltage being changed into the first varistor and the output voltage of the second varistor, can determine that the pressure size suffered by display device thus according to this difference (V1-V0).
When the environmental factorss such as temperature change, first varistor and the second varistor all can change, and due to when display device is under pressure, second varistor will not be squeezed due to the supporting role of supporting construction 9, therefore the change of its resistance is only because what the environmental factorss such as temperature caused, and the change in resistance of the first varistor causes jointly due to the environmental factorss such as temperature and stress, the impact that can the environmental factorss such as temperature be caused hence with the mathematic interpolation pressure between output voltage and the output voltage of the second varistor of the first varistor eliminates, improve the accuracy of pressure detecting.
In the specific implementation, scan signal S1 and the second scanning signal S2 can be generated by the timing control unit arranged inside display device, can also by outside display device arrange timing control unit generate, no matter as long as which kind of mode its can realize to three transistors be turned on and off be controlled.
In the specific implementation, the gate metal layer in transistor circuit layer can be utilized as connecting the conductor fig 31 presetting bias voltage, now, as shown in Figure 2, one the 4th transistor T4 can also be set, being connected by the grid of the outfan of each pressure detection circuit 6 and secondary nodal point B and the four transistor T4, and in the source electrode of the 4th transistor T4 or drain electrode connects running voltage, source electrode or another in drain electrode are as outfan.When gated sweep signal is accessed OLED display device by the mode adopting progressive scan, the 4th transistor T4 can export the pressure signal that every a line grid line correspondence position detects, thus obtaining the pressure distribution situation of whole OLED display device.
Second aspect, the present invention provides a kind of display device, and this display device includes any of the above organic elctroluminescent device.
In the specific implementation, display device here can be: any product with display function or the parts such as display floater, Electronic Paper, mobile phone, panel computer, television set, display, notebook computer, DPF, navigator.
It should be noted that, in this article, the relational terms of such as first and second or the like is used merely to separate an entity or operation with another entity or operating space, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " includes ", " comprising " or its any other variant are intended to comprising of nonexcludability, so that include the process of a series of key element, method, article or equipment not only include those key elements, but also include other key elements being not expressly set out, or also include the key element intrinsic for this process, method, article or equipment.When there is no more restriction, statement " including ... " key element limited, it is not excluded that there is also other identical element in including the process of described key element, method, article or equipment.Term " on ", the orientation of the instruction such as D score or position relationship be based on orientation shown in the drawings or position relationship, it is for only for ease of the description present invention and simplifies description, rather than instruction or hint indication device or element must have specific orientation, with specific azimuth configuration and operation, be therefore not considered as limiting the invention.Unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, for instance, it is possible to it is fixing connection, it is also possible to be removably connect, or connect integratedly；Can be mechanically connected, it is also possible to be electrical connection；Can be joined directly together, it is also possible to be indirectly connected to by intermediary, it is possible to be the connection of two element internals.For the ordinary skill in the art, it is possible to understand above-mentioned term concrete meaning in the present invention as the case may be.
In the description of the present invention, describe a large amount of detail.Although it is understood that, embodiments of the invention can be put into practice when not having these details.In some instances, known method, structure and technology it are not shown specifically, in order to do not obscure the understanding of this description.Similarly, it is to be understood that, one or more in order to what simplify that disclosure helping understands in each inventive aspect, herein above in the description of the exemplary embodiment of the present invention, each feature of the present invention is grouped together in single embodiment, figure or descriptions thereof sometimes.
Last it is noted that various embodiments above is only in order to illustrate technical scheme, it is not intended to limit；Although the present invention being described in detail with reference to foregoing embodiments, it will be understood by those within the art that: the technical scheme described in foregoing embodiments still can be modified by it, or wherein some or all of technical characteristic is carried out equivalent replacement；And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme, it all should be encompassed in the middle of the scope of description of the present invention.
Claims (10)
1. an organic elctroluminescent device, including underlay substrate, and through-thickness is successively set on the transistor circuit layer of the first side and the light emitting device layer of described underlay substrate, it is characterised in that the surface of described underlay substrate is provided with at least one pressure-sensing region；Described organic elctroluminescent device also includes the varistor layer being arranged at least one pressure-sensing region described；
The varistor layer being arranged on arbitrary described pressure-sensing region connects two conductor structures respectively at two zone boundaries place, to form the first link and second link of first varistor in this pressure-sensing region respectively；
First link of described first varistor and the second link are for Bonding pressure testing circuit respectively, so that described pressure detection circuit obtains pressure sensor signal according to the signal of telecommunication at the two ends of described first varistor.
2. display device according to claim 1, it is characterised in that described underlay substrate is formed by semi-conducting material；Piezoresistive material processing technology that described varistor layer is carried out at least one pressure-sensing region described by described underlay substrate and formed.
3. display device according to claim 2, it is characterised in that described conductor structure is processed by the conductorization that described underlay substrate is carried out in corresponding region and formed.
4. according to the arbitrary described display device of claim 1-3, it is characterised in that described varistor layer is additionally arranged at least one the pressure reference region on the surface of described underlay substrate；At least side in described pressure reference region is provided with supporting construction；Described supporting construction undertakes pressure experienced on its thickness direction for replacing the varistor layer in described pressure reference region；
The varistor layer being arranged on arbitrary described pressure reference region connects two conductor structures respectively at two zone boundaries place, to form the first link and second link of second varistor in this pressure reference region；
First link of described second varistor and the second link are for connecting described pressure detection circuit respectively, so that described pressure detection circuit using the signal of telecommunication at the two ends of described second varistor as benchmark, obtain pressure sensor signal according to the signal of telecommunication at the two ends of described first varistor.
5. display device according to claim 4, it is characterised in that described pressure-sensing region is arranged at the surface of the second side of described underlay substrate；Described pressure reference region is arranged at the surface of the first side of described underlay substrate.
6. display device according to claim 4, it is characterised in that described pressure-sensing region and described pressure reference region are arranged at the surface of the first side of described underlay substrate；It is additionally provided with dielectric spacer layer between described varistor layer and described transistor circuit layer；First link of described first varistor and the first link of described second varistor connect in described transistor circuit layer for connecting the conductor fig of default bias voltage each through the via in described dielectric spacer layer.
7. display device according to claim 6, it is characterised in that the form with transistor circuit of at least part of circuit structure in described pressure detection circuit is arranged in described transistor circuit layer；Second link of described first varistor and the second link of described second varistor are to be connected to the pressure detection circuit in described transistor circuit layer in the way of interlevel via.
8. display device according to claim 7, it is characterised in that the pressure detection circuit in described transistor circuit layer includes the first transistor, transistor seconds, third transistor and electric capacity；Wherein,
The grid of described the first transistor connects scan signal, source electrode and second link connecting described first varistor in drain electrode, and another connects the first end of described electric capacity；
The grid of described transistor seconds connects the second scanning signal, source electrode and second link connecting described second varistor in drain electrode, and another connects the first end of described electric capacity；
The grid of described third transistor connects described second scanning signal, source electrode and a connection reset bias voltage in drain electrode, and another connects the second end of described electric capacity.
9. display device according to claim 4, it is characterised in that described pressure reference region is arranged on outside the territory, effective display area of described organic elctroluminescent device.
10. a display device, it is characterised in that include organic elctroluminescent device as in one of claimed in any of claims 1 to 9.
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Application publication date: 20160706 |