CN102328899A - Method for manufacturing cavities of different depths - Google Patents
Method for manufacturing cavities of different depths Download PDFInfo
- Publication number
- CN102328899A CN102328899A CN201110223477A CN201110223477A CN102328899A CN 102328899 A CN102328899 A CN 102328899A CN 201110223477 A CN201110223477 A CN 201110223477A CN 201110223477 A CN201110223477 A CN 201110223477A CN 102328899 A CN102328899 A CN 102328899A
- Authority
- CN
- China
- Prior art keywords
- substrate
- protective layer
- manufacturing approach
- approach according
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
The invention provides a method for manufacturing cavities of different depths, which comprises the following steps of: providing a substrate, and dividing the substrate into a plurality of areas; forming a substrate protection layer on the substrate; forming a plurality of windows of different sizes and/ or shapes on the substrate protection layer; etching the substrate; respectively forming grooves of different sizes and/ or depths in each area in the substrate; respectively depositing an isolation layer on the surface of the substrate protection layer as well as the side wall and the bottom of the groove; removing the isolation layers on the surface of the substrate protection layer and the bottom of the groove; forming a side wall protection layer on the isolation layer left on the side wall of the groove; continuously etching the groove, and respectively forming the deep grooves of different depths in each area; corroding the deep groove with a wet method; and respectively forming cavities of different depths in the substrates of a plurality of areas. With the method, the cavities of different depths and heights can be realized without adding additional technical steps or photoetching masks. The method has an obvious cost competition advantage and is especially suitable for manufacturing compound sensors with the high integration degree.
Description
Technical field
The present invention relates to MEMS manufacturing technology field, specifically, the present invention relates to a kind of different depth cavity manufacturing method.
Background technology
In a lot of MEMSs (MEMS) and application of sensor, all need adopt the cavity of hollow, how being processed to form these cavitys is committed steps of making the MEMS device.
With sensor application, compound sensor is the important trend of sensor development.So-called compound sensor is exactly integrated a plurality of sensors in a sensor chip.In similar the application, possibly need to form a plurality of cavitys, and the degree of depth that these cavitys need basis needs separately often have nothing in common with each other.Therefore, the difficulty of the cavity of a plurality of different depths of manufacturing or height is just higher in same substrate.
In the prior art in order to form the cavity of the different depth of realizing different application; Generally need to adopt the polylith reticle; And the photoetching and the etching technics of employing multistep, make manufacturing cost significantly rise, so just having weakened integrated compound sensor greatly brings the competitive advantage on the cost.
Summary of the invention
Technical problem to be solved by this invention provides a kind of different depth cavity manufacturing method; Need not increase extra processing step and photo etched mask; With low cost, be fit to the manufacturing of the compound sensor of high integration, and have good precision and reliability.
In order to solve the problems of the technologies described above, the present invention provides a kind of different depth cavity manufacturing method, comprises step:
Substrate is provided, and said substrate is divided into a plurality of zones according to the different depth that forms cavity;
In said substrate, form the substrate protective layer;
On said substrate protective layer, form a plurality of different sizes and/or difform window, until the substrate of exposing the below;
With said substrate protective layer is mask, the said substrate of etching, and each zone in said substrate forms the groove of different size and/or different depth respectively;
At the surface of said substrate protective layer and the sidewall and the deposit separation layer of said groove;
Remove the separation layer of said substrate protective layer surface and said bottom portion of groove, the said separation layer formation side wall protective layer that keeps at the sidewall of said groove;
With said substrate protective layer and said side wall protective layer is mask, continues the said groove of etching, forms the deep trouth of different depth respectively in each zone;
Adopt the wet etching method to corrode said deep trouth, form the cavity that zones of different has different depth respectively in the substrate inside in said a plurality of zones.
Alternatively,, formation also comprises step after having the cavity of different depth:
Between the side wall protective layer of said groove, fill up packing material, said cavity is sealed.
Alternatively, said substrate is a silicon.
Alternatively, said substrate protective layer is that mode through thermal response forms.
Alternatively, said substrate protective layer comprises silica, silicon nitride, silicon oxynitride or polysilicon.
Alternatively, said substrate protective layer also comprises metal simple-substance, alloy, metal oxide or metal nitride.
Alternatively, the size of said window and/or shape are adjustable according to actual needs.
Alternatively, the size of the size of said groove and/or the degree of depth and said window and/or shape have relevance.
Alternatively, said separation layer forms through CVD method, atomic layer deposition method or thermal reaction method.
Alternatively, the separation layer of the bottom of the surface of said substrate protective layer and said groove is removed through returning carving technology.
Alternatively, the size of the size of said deep trouth and/or the degree of depth and said window and/or shape have relevance.
Alternatively, said wet etching method adopts anisotropic etching process, forms the cavity with different depth respectively in said substrate inside.
Alternatively, said substrate is the silicon in (111) crystal orientation.
Alternatively, the solution of said wet etching is KOH and/or TMAH.
Alternatively, the shape of said cavity and/or the degree of depth are arbitrarily.
The technology of alternatively, said cavity being sealed is sedimentation, bonding method or galvanoplastic.
Alternatively, the part that covers on the said substrate protective layer of said packing material need be removed or keep.
Alternatively, said cavity is also comprised step after sealing:
Deposit or spin coating one back-up coat on the said packing material that covers said substrate protective layer.
Compared with prior art, the present invention has the following advantages:
The present invention need not add extra processing step and photo etched mask, just can realize the cavity of different depth and height, has tangible cost competitive advantage, especially is fit to the manufacturing of the compound sensor of high integration, and has good precision and reliability.
Description of drawings
Above-mentioned and other characteristic, character and advantage of the present invention will become more obvious through the description below in conjunction with accompanying drawing and embodiment, wherein:
Fig. 1 is the flow chart of the different depth cavity manufacturing method of one embodiment of the invention;
Fig. 2 to Fig. 8 is the cross-sectional view of manufacture process of the different depth cavity of one embodiment of the invention;
Fig. 9 fills up packing material for one embodiment of the invention between the side wall protective layer of groove, the cross-sectional view that cavity is sealed;
Figure 10 is the cross-sectional view that follow-up technology discharges frame for movement of passing through of one embodiment of the invention.
The specific embodiment
Below in conjunction with specific embodiment and accompanying drawing the present invention is described further; Set forth more details in the following description so that make much of the present invention; But the present invention obviously can implement with multiple this description ground alternate manner that is different from; Those skilled in the art can do similar popularization, deduction according to practical situations under the situation of intension of the present invention, therefore should be with content constraints protection scope of the present invention of this specific embodiment.
Fig. 1 is the flow chart of the different depth cavity manufacturing method of one embodiment of the invention.As shown in the figure, the flow process of this manufacturing approach can comprise:
Execution in step S101 provides substrate, and substrate is divided into a plurality of zones according to the different depth that forms cavity;
Execution in step S102 forms the substrate protective layer in substrate;
Execution in step S103 forms a plurality of different sizes and/or difform window, until the substrate of exposing the below on the substrate protective layer;
Execution in step S104 is a mask with the substrate protective layer, the etching substrate, and each zone in substrate forms the groove of different size and/or different depth respectively;
Execution in step S105 is at the surface of substrate protective layer and the sidewall and the deposit separation layer of groove;
Execution in step S106 removes the separation layer of substrate protective layer surface and bottom portion of groove, the separation layer formation side wall protective layer that only keeps at the sidewall of groove;
Execution in step S107 is a mask with substrate protective layer and side wall protective layer, continues etched recesses, forms the deep trouth of different depth respectively in each zone;
Execution in step S108 adopts wet etching method corrosion deep trouth, forms the cavity that zones of different has different depth respectively in the substrate inside in a plurality of zones.
Fig. 2 to Fig. 8 is the cross-sectional view of manufacture process of the different depth cavity of one embodiment of the invention.It should be noted that these and follow-up other accompanying drawing all only as an example, it is not to be to draw according to the condition of equal proportion, and should not limit as the protection domain formation to the actual requirement of the present invention with this.
As shown in Figure 2, substrate 001 is provided, its different depth according to cavity to be formed is divided into a plurality of zones, for example three zones, left, center, right shown in the figure.
As shown in Figure 3, in substrate 001, form substrate protective layer 002.The substrate protective layer 002 that forms can be that the mode through thermal response (like thermal oxide) forms.For example, when substrate 001 is silicon, on base silicon, adopt thermal oxide to realize the growth of silicon oxide layer.This substrate protective layer 002 also can for silicon nitride, silicon oxynitride or polysilicon at interior material, even can also be the conductive material of metal simple-substance, alloy, metal oxide or metal nitride and so on.The characteristic of substrate protective layer 002 is the damage that the substrate 001 below can in follow-up technology, protecting is not processed.
As shown in Figure 4, on substrate protective layer 002, form a plurality of different sizes and/or difform window 003,004,005, until the substrate 001 of exposing the below.In the present embodiment, the size of window 003 (area) minimum, window 004 takes second place, window 005 maximum.The size of this window 003,004,005 and/or shape are adjustable (adjustable) according to actual needs.
As shown in Figure 5, be mask with substrate protective layer 002, etching substrate 001 forms the groove 006,007,008 of each regional different size and/or different depth respectively in three zones, the left, center, right in substrate 001.The size and/or the shape of the size of groove 006,007,008 and/or the degree of depth and window 003,004,005 have relevance.Usually, window size is more little, and the depth of groove of etching is shallow more, and vice versa.So the groove 006,007 that above-mentioned steps forms and 008 the degree of depth are deepened gradually.
As shown in Figure 6, through for example CVD method, atomic layer deposition method or thermal reaction method, at the surface of substrate protective layer 002 and the sidewall and the deposit separation layer (not indicating) of groove 006,007,008.
Then, adopt the separation layer of the bottom for example return surface that carving technology removes substrate protective layer 002 and groove 006,007,008, only the sidewall at groove 006,007,008 retains above-mentioned separation layer, and formation side wall protective layer 009 is as shown in Figure 6.
As shown in Figure 7, be mask with substrate protective layer 002 with side wall protective layer 009, continue etched recesses 006,007,008, in three zones, left, center, right, form the deep trouth 010,011,012 of different size and/or different depth respectively.Similarly, the size of deep trouth 010,011,012 and/or the degree of depth also have relevance with the size and/or the shape of window 003,004,005, and resulting deep trouth 010,011 and 012 size become greatly gradually, the degree of depth is deepened gradually.
As shown in Figure 8; Adopt wet etching method corrosion deep trouth 010,011,012; Trizonal substrate 001 inside forms the cavity 013,014,015 that zones of different has different depth and/or height respectively in the left, center, right, and their shape and/or the degree of depth in fact can be arbitrarily.
In the present embodiment, can pay the utmost attention to the anisotropic etching process of employing.The silicon that for example can adopt (111) crystal orientation adopts to comprise that the etchant solution of KOH or TMAH forms cavity 013,014,015 in substrate 001 as substrate 001 then.Well-known, above-mentioned etchant solution has for the silicon materials of (111) crystal face compares the much lower corrosion rate of other faces.
So far, the manufacture process of the different depth cavity of one embodiment of the invention can come to an end.But the present invention can also seal cavity 013,014,015.Fig. 9 fills up packing material for one embodiment of the invention between the side wall protective layer of groove, the cross-sectional view that cavity is sealed.As shown in Figure 9, have the cavity 013,014 of different depth in formation shown in Figure 8, after 015, can also between the side wall protective layer 009 of groove 006,007,008, fill up packing material 016, cavity 013,014,015 is sealed.Its concrete sealing process can be sedimentation, bonding method or galvanoplastic, and this can select according to actual needs.
At last, the present invention can also discharge frame for movement through follow-up technology.Figure 10 is the cross-sectional view that follow-up technology discharges frame for movement of passing through of one embodiment of the invention.Shown in figure 10, show a kind of structure that part-structure is released into cantilever beam at this.Through above cavity 015, producing isolation channel 017, form releasing structure, thereby can above cavity 015, form cantilever beam or cantilever portion.
It is pointed out that at this present invention has only shown the formation of several cavitys in an embodiment, does not relate to the concrete purposes of above-mentioned cavity.According to the application of reality, can in above-mentioned implementation process, add specific technology, to reach the purpose that realizes specific function.For example, in order to realize the application of pressure sensor, need above cavity, make at interior sensing module such as the pressure drag unit; Also for example, in order to realize the application of acceleration transducer, also need be above cantilever beam of realizing or cantilever portion workmanship piece etc.But these are not restriction contents of the present invention.
The present invention need not add extra processing step and photo etched mask, just can realize the cavity of different depth and height, has tangible cost competitive advantage, especially is fit to the manufacturing of the compound sensor of high integration, and has good precision and reliability.
Though the present invention with preferred embodiment openly as above, it is not to be used for limiting the present invention, and any those skilled in the art are not breaking away from the spirit and scope of the present invention, can make possible change and modification.Therefore, every content that does not break away from technical scheme of the present invention, according to technical spirit of the present invention to any modification, equivalent variations and modification that above embodiment did, within the protection domain that all falls into claim of the present invention and defined.
Claims (18)
1. different depth cavity manufacturing method comprises step:
Substrate is provided, and said substrate is divided into a plurality of zones according to the different depth that forms cavity;
In said substrate, form the substrate protective layer;
On said substrate protective layer, form a plurality of different sizes and/or difform window, until the substrate of exposing the below;
With said substrate protective layer is mask, the said substrate of etching, and each zone in said substrate forms the groove of different size and/or different depth respectively;
At the surface of said substrate protective layer and the sidewall and the deposit separation layer of said groove;
Remove the separation layer of said substrate protective layer surface and said bottom portion of groove, the said separation layer formation side wall protective layer that keeps at the sidewall of said groove;
With said substrate protective layer and said side wall protective layer is mask, continues the said groove of etching, forms the deep trouth of different depth respectively in each zone;
Adopt the wet etching method to corrode said deep trouth, form the cavity that zones of different has different depth respectively in the substrate inside in said a plurality of zones.
2. manufacturing approach according to claim 1 is characterized in that, after formation has the cavity of different depth, also comprises step:
Between the side wall protective layer of said groove, fill up packing material, said cavity is sealed.
3. manufacturing approach according to claim 1 and 2 is characterized in that, said substrate is a silicon.
4. manufacturing approach according to claim 3 is characterized in that, said substrate protective layer is that the mode through thermal response forms.
5. manufacturing approach according to claim 3 is characterized in that, said substrate protective layer comprises silica, silicon nitride, silicon oxynitride or polysilicon.
6. manufacturing approach according to claim 5 is characterized in that, said substrate protective layer also comprises metal simple-substance, alloy, metal oxide or metal nitride.
7. manufacturing approach according to claim 6 is characterized in that, the size of said window and/or shape are adjustable according to actual needs.
8. manufacturing approach according to claim 7 is characterized in that, the size and/or the shape of the size of said groove and/or the degree of depth and said window have relevance.
9. manufacturing approach according to claim 8 is characterized in that, said separation layer forms through CVD method, atomic layer deposition method or thermal reaction method.
10. manufacturing approach according to claim 9 is characterized in that, the separation layer of the surface of said substrate protective layer and the bottom of said groove is removed through returning carving technology.
11. manufacturing approach according to claim 10 is characterized in that, the size and/or the shape of the size of said deep trouth and/or the degree of depth and said window have relevance.
12. manufacturing approach according to claim 11 is characterized in that, said wet etching method adopts anisotropic etching process, forms the cavity with different depth respectively in said substrate inside.
13. manufacturing approach according to claim 12 is characterized in that, said substrate is the silicon in (111) crystal orientation.
14. manufacturing approach according to claim 13 is characterized in that, the solution of said wet etching is KOH and/or TMAH.
15. manufacturing approach according to claim 14 is characterized in that, the shape of said cavity and/or the degree of depth are arbitrarily.
16. manufacturing approach according to claim 15 is characterized in that, the technology that said cavity is sealed is sedimentation, bonding method or galvanoplastic.
17. manufacturing approach according to claim 16 is characterized in that, the part that said packing material covers on the said substrate protective layer need be removed or keep.
18. manufacturing approach according to claim 17 is characterized in that, also comprises step after said cavity is sealed:
Deposit or spin coating one back-up coat on the said packing material that covers said substrate protective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110223477A CN102328899A (en) | 2011-08-05 | 2011-08-05 | Method for manufacturing cavities of different depths |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110223477A CN102328899A (en) | 2011-08-05 | 2011-08-05 | Method for manufacturing cavities of different depths |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102328899A true CN102328899A (en) | 2012-01-25 |
Family
ID=45480897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110223477A Pending CN102328899A (en) | 2011-08-05 | 2011-08-05 | Method for manufacturing cavities of different depths |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102328899A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102602881A (en) * | 2012-04-01 | 2012-07-25 | 杭州士兰集成电路有限公司 | Method for forming multiple silicon trenches on MEMS (Micro Electro Mechanical Systems) sealing-cap silicon chip and etching mask structure thereof |
| WO2013023446A1 (en) * | 2011-08-12 | 2013-02-21 | 上海先进半导体制造股份有限公司 | Cavity manufacturing method |
| CN102942157A (en) * | 2012-10-12 | 2013-02-27 | 上海大学 | Flow sensor manufacturing method by the way of positive corrosion |
| CN103373700A (en) * | 2012-04-17 | 2013-10-30 | 英飞凌科技股份有限公司 | Methods for producing a cavity within a semiconductor substrate |
| CN103510088A (en) * | 2012-06-29 | 2014-01-15 | 中国科学院微电子研究所 | Solid-state hole array and manufacturing method thereof |
| US9136160B2 (en) | 2012-06-29 | 2015-09-15 | Institute of Microelectronics, Chinese Academy of Sciences | Solid hole array and method for forming the same |
| WO2015161641A1 (en) * | 2014-04-25 | 2015-10-29 | 上海先进半导体制造股份有限公司 | Composite cavity and forming method therefor |
| CN105174201A (en) * | 2015-06-24 | 2015-12-23 | 上海芯赫科技有限公司 | MEMS (Micro-Electro-Mechanical System) integrated composite sensor and machining method thereof |
| CN106840469A (en) * | 2015-12-04 | 2017-06-13 | 上海新微技术研发中心有限公司 | Pressure sensor integrated with multiple gears and manufacturing method thereof |
| CN113776721A (en) * | 2021-09-07 | 2021-12-10 | 上海韦尔半导体股份有限公司 | Sensor integrated chip and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1454835A (en) * | 2003-04-11 | 2003-11-12 | 中国电子科技集团公司第十三研究所 | Method of manufacturing monolithic integration of movable micro physical construction on monocrystalline silicon substrate |
| JP2009111642A (en) * | 2007-10-29 | 2009-05-21 | Yamaha Corp | Fine concave forming method and method for manufacturing condenser microphone |
| CN101559916A (en) * | 2009-04-28 | 2009-10-21 | 北京大学 | Method for preparing masking microstructure |
-
2011
- 2011-08-05 CN CN201110223477A patent/CN102328899A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1454835A (en) * | 2003-04-11 | 2003-11-12 | 中国电子科技集团公司第十三研究所 | Method of manufacturing monolithic integration of movable micro physical construction on monocrystalline silicon substrate |
| JP2009111642A (en) * | 2007-10-29 | 2009-05-21 | Yamaha Corp | Fine concave forming method and method for manufacturing condenser microphone |
| CN101559916A (en) * | 2009-04-28 | 2009-10-21 | 北京大学 | Method for preparing masking microstructure |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013023446A1 (en) * | 2011-08-12 | 2013-02-21 | 上海先进半导体制造股份有限公司 | Cavity manufacturing method |
| CN102602881A (en) * | 2012-04-01 | 2012-07-25 | 杭州士兰集成电路有限公司 | Method for forming multiple silicon trenches on MEMS (Micro Electro Mechanical Systems) sealing-cap silicon chip and etching mask structure thereof |
| US10513431B2 (en) | 2012-04-01 | 2019-12-24 | Hangzhou Silan Integrated Circuit Co., Ltd | Multiple silicon trenches forming method for MEMS sealing cap wafer and etching mask structure thereof |
| WO2013149547A1 (en) * | 2012-04-01 | 2013-10-10 | 杭州士兰集成电路有限公司 | Multi-silicon trench forming method and etching mask structure thereof for mems sealing cap silicon chip |
| US10081541B2 (en) | 2012-04-01 | 2018-09-25 | Hangzhou Silan Integrated Circuit Co., Ltd | Multiple silicon trenches forming method for MEMS sealing cap wafer and etching mask structure thereof |
| CN102602881B (en) * | 2012-04-01 | 2014-04-09 | 杭州士兰集成电路有限公司 | Method for forming multiple silicon trenches on MEMS (Micro Electro Mechanical Systems) sealing-cap silicon chip and etching mask structure thereof |
| CN103373700A (en) * | 2012-04-17 | 2013-10-30 | 英飞凌科技股份有限公司 | Methods for producing a cavity within a semiconductor substrate |
| US9708182B2 (en) | 2012-04-17 | 2017-07-18 | Infineon Technologies Ag | Methods for producing a cavity within a semiconductor substrate |
| US9139427B2 (en) | 2012-04-17 | 2015-09-22 | Infineon Technologies Ag | Methods for producing a cavity within a semiconductor substrate |
| CN103510088B (en) * | 2012-06-29 | 2015-11-11 | 中国科学院微电子研究所 | Solid-state hole array and preparation method thereof |
| US9136160B2 (en) | 2012-06-29 | 2015-09-15 | Institute of Microelectronics, Chinese Academy of Sciences | Solid hole array and method for forming the same |
| CN103510088A (en) * | 2012-06-29 | 2014-01-15 | 中国科学院微电子研究所 | Solid-state hole array and manufacturing method thereof |
| CN102942157A (en) * | 2012-10-12 | 2013-02-27 | 上海大学 | Flow sensor manufacturing method by the way of positive corrosion |
| WO2015161641A1 (en) * | 2014-04-25 | 2015-10-29 | 上海先进半导体制造股份有限公司 | Composite cavity and forming method therefor |
| US10035701B2 (en) | 2014-04-25 | 2018-07-31 | Advanced Semiconductor Manufacturing Co. Ltd. | Composite cavity and forming method thereof |
| CN105174201A (en) * | 2015-06-24 | 2015-12-23 | 上海芯赫科技有限公司 | MEMS (Micro-Electro-Mechanical System) integrated composite sensor and machining method thereof |
| CN105174201B (en) * | 2015-06-24 | 2017-10-10 | 上海芯赫科技有限公司 | A kind of MEMS integrated compound sensors and its processing method |
| CN106840469A (en) * | 2015-12-04 | 2017-06-13 | 上海新微技术研发中心有限公司 | Pressure sensor integrated with multiple gears and manufacturing method thereof |
| CN113776721A (en) * | 2021-09-07 | 2021-12-10 | 上海韦尔半导体股份有限公司 | Sensor integrated chip and manufacturing method thereof |
| CN113776721B (en) * | 2021-09-07 | 2024-06-07 | 上海韦尔半导体股份有限公司 | Sensor integrated chip and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102328899A (en) | Method for manufacturing cavities of different depths | |
| JP6298216B2 (en) | Suspended membrane for capacitive pressure sensor | |
| CN102285633B (en) | Composite integrated sensor structure and manufacturing method thereof | |
| US9139427B2 (en) | Methods for producing a cavity within a semiconductor substrate | |
| CN102502479B (en) | Composite integrated sensor structure and manufacture method thereof | |
| CN101559916B (en) | Method for preparing masking microstructure | |
| CN103979481B (en) | MEMS aluminium germanium bonding structure and manufacture method thereof | |
| CN100477162C (en) | Wafer cutting method | |
| US20150008541A1 (en) | Mems pressure sensors and fabrication method thereof | |
| CN102539033B (en) | The method for making of pressure sensor for micro electro-mechanical system | |
| CN103035489A (en) | Method for precisely controlling thinning of wafer | |
| CN104991086A (en) | Method for machining MEMS acceleration sensor and acceleration sensor | |
| CN105174201A (en) | MEMS (Micro-Electro-Mechanical System) integrated composite sensor and machining method thereof | |
| CN105621342A (en) | MEMS release auxiliary structure and preparation method thereof | |
| CN103439032A (en) | Processing method of silicon micro resonator | |
| CN105021328A (en) | Piezoresistive pressure sensor compatible with CMOS process and preparation method of piezoresistive pressure sensor | |
| CN102285637A (en) | Cavity manufacturing method with side wall protection | |
| KR100732698B1 (en) | A method for fabricating a micro structures with multi thickness | |
| CN102328900A (en) | Cavity manufacturing method | |
| CN117069053A (en) | Semiconductor device and method for manufacturing the same | |
| CN105628054B (en) | Inertial sensor and preparation method thereof | |
| CN103395736A (en) | MEMS glass size bonding structure and manufacturing method thereof | |
| EP3682210B1 (en) | Capacitive pressure sensors and other devices having a suspended membrane and having rounded corners at an anchor edge | |
| US8652867B2 (en) | Micrometer-scale grid structure based on single crystal silicon and method of manufacturing the same | |
| CN106379858A (en) | Manufacturing method of micro-electromechanical device, micro-electromechanical device and micro-electromechanical device base structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120125 |