CN102942157A - Flow sensor manufacturing method by the way of positive corrosion - Google Patents
Flow sensor manufacturing method by the way of positive corrosion Download PDFInfo
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- CN102942157A CN102942157A CN2012103846376A CN201210384637A CN102942157A CN 102942157 A CN102942157 A CN 102942157A CN 2012103846376 A CN2012103846376 A CN 2012103846376A CN 201210384637 A CN201210384637 A CN 201210384637A CN 102942157 A CN102942157 A CN 102942157A
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Abstract
The invention relates to a flow sensor manufacturing method by the way of positive corrosion. According to the method, a groove for production of cavity is formed on the front of a substrate by using a reactive ion etching method. The thickness of the substrate above the cavity is determined by the depth of the groove, then a barrier layer is deposited on the surfaces of the substrate and the sidewall and the bottom of the groove, the barrier layer on the surfaces of the substrate and the bottom of the groove is selectively removed, a sidewall protecting layer is formed on the sidewall of the groove, and the sidewall protective layer is taken as a masking to continuously etch groove to form a deep groove. By using a wet etching method to etch deep grooves, a cavity is formed in the interior of the substrate, then a metal-containing heating device and a metal-containing temperature measuring device are manufactured within a front specific area, and the protective layer is deposited. So the thickness controllable silicon substrate cavity under the specific area where the heating device and the temperature measuring device are located is obtained with high efficiency and low cost.
Description
Technical field
The present invention relates to MEMS (MEMS) manufacturing technology field, specifically, the present invention relates to a kind of method that adopts the front etch mode to make flow sensor.
Background technology
In the structure of some and temperature correlation semiconductor transducer, sometimes need to be on the unsettled film of a thinner thickness at sensor, the thinner thickness of unsettled film, after encapsulation, the substrate of sensor below does not directly contact with the pedestal of encapsulation, but unsettled and air or vacuum contact reach and reduce the purpose that ambient temperature is disturbed.
From the application facet of the sensor, the thickness of the precision of sensor and device below backing material is closely related.In order to realize higher temperature measurement accuracy and short response time, need to make the film thickness of unsettled top thinner, reach and reduce vertically heat conduction of device; Certainly need also on the other hand to consider thinner substrate to the supporting role of device that thickness is thicker, sensor construction is more firm, therefore finally need to consider the factor of above-mentioned several respects, selected suitable surface layer film thickness.
For semiconductor technology, the technique of current most sensors all needs the technique at the back side, and these techniques are current main flows, yet but incompatible with the semiconductor technology of routine, therefore need to adopt the sensor machining production line of customization characteristics, increased production cost.And it is also very high to obtain the difficulty of accurate surface silicon thickness by back side etching process.In, batch more semiconductor factory the inside processing large in size, in the sheet between the uniformity of device, sheet the reproducibility problems of device just more appear.Adopt preparation method of the present invention, can solve the above problems well, the quality of the sensor that produces is obviously higher.
The present invention relates to a kind of manufacture method of flow sensor, have the repeatability of device between the uniformity, sheet of device in the good sheet, be fit to large batch of production.
Summary of the invention
The object of the invention is to provides a kind of method that adopts the front etch mode to make flow sensor for the defective that prior art exists, can be compatible with the semiconductor fabrication process of routine, and simplified manufacturing technique reduces production costs.
For solving the problems of the technologies described above, the present invention adopts following technical proposals: a kind of method that adopts the front etch mode to make flow sensor, and it is characterized in that: manufacturing technology steps is as follows:
1) get a silicon substrate, there is the one deck of covering separation layer this silicon substrate top, adopts the dry etching method to be formed for making the groove of cavity in described silicon substrate;
2) in the surface of described substrate and sidewall and the bottom barrier layer of described groove;
3) barrier layer of the bottom of the surface of the described substrate of removal and described groove is at the sidewall formation side wall protective layer of described groove;
4) take described side wall protective layer as mask, continue the described groove of etching, form deep trouth;
5) adopt the wet etching method to corrode described deep trouth, form cavity in the inside of described substrate;
6) between the side wall protective layer of described groove, fill up isolation and/or packing material, form plug structure, described cavity is isolated from the outside;
7) with the flattening surface of described substrate;
8) deposit electrothermal layer on described silicon substrate;
9) described electrothermal layer is done graphically to form heater, temperature measuring equipment and electrode at described silicon substrate;
10) deposit protective layer on described substrate, described protective layer covers described heater and described temperature measuring equipment.
Alternatively, described method also is included in deposition insulating layer before the groove that form to make cavity.
Alternatively, described substrate is the silicon in (111) crystal orientation.
Alternatively, the shape of described groove and/or the degree of depth are adjustable according to actual needs.
Alternatively, described barrier layer forms by CVD method or atomic layer deposition method.
Alternatively, remove by returning carving technology on the barrier layer of the bottom of the surface of described substrate and described groove.
Alternatively, the degree of depth of described deep trouth is 0.1～10um.
Alternatively, described wet etching method adopts anisotropic etching process to form cavity in the inside of described substrate.
Alternatively, the solution of described wet etching is KOH and/or TMAH.
Alternatively, the shape of described cavity and/or the degree of depth are arbitrarily.
Alternatively, between the side wall protective layer of described groove, fill isolation and/or packing material by CVD method or atomic layer deposition method.
Alternatively, described isolation and/or packing material are individual layer or sandwich construction.
Alternatively, described flatening process comprises chemically mechanical polishing and/or returns and carve.
Alternatively, described electrothermal layer is metallic material.
Alternatively, described electrothermal layer is structure individual layer or multilayer.
Alternatively, described metallic material is temperature resistance material.
Alternatively, described temperature resistance material comprises platinum or gold.
Alternatively, shape, layout, line size, thickness and the number of turns of described heater and described temperature measuring equipment are adjustable according to different needs.
Alternatively, described protective layer is structure individual layer or multilayer.
The present invention compared with prior art has following apparent outstanding substantive distinguishing features and significantly technological progress:
Air flow sensor manufacture method provided by the invention be adopt front etch, with the technique of conventional semiconductor technology compatibility, on general semiconductor production line, can realize large-scale manufacturing, have the advantages such as practicality, economy, high-performance.
Description of drawings
Fig. 1 is the structural representation of a flow sensor of the present invention.
Fig. 2 is A-A place profile among Fig. 1.
Fig. 3～16th, the structural representation that each program of flow sensor manufacture process shown in Figure 1 manifests.
The specific embodiment
Details are as follows by reference to the accompanying drawings for the preferred embodiments of the present invention:
Fig. 1 is the floor map of the temperature resistance sensor construction of one embodiment of the invention manufacturing.In the plane of the shown sensor construction of Fig. 1, comprise groove 002, heating unit 003, temperature measuring unit 004 and the cavity 010 that forms cavity in substrate 001.For the structure of this temperature resistance sensor is described better, above-mentioned sensor is done cross-sectional view in the A-A direction, as shown in Figure 2.
The cross-sectional view of the A-A direction that Fig. 2 is temperature shown in Figure 1 resistance sensor construction in the figure.As can be seen from Fig. 2; heating unit 003 and temperature measuring unit 004 are formed on the basilar memebrane with certain thickness, and film is unsettled above cavity 010, and shown in the number in the figure 006 is packing material; label 108 and 008 is respectively top layer protective layer and groove side wall protective layer, and label 009 is separation layer.
Those skilled in the art will appreciate that above-mentioned distribution by temperature resistance sensor construction illustrated in figures 1 and 2 is graphic schematically.It is also understood that at this it can be arbitrarily carries out arranging and adjusting of position to the inside unit of temperature resistance sensor construction as required, all is within the protection domain of the present patent application.In addition, also all can adjust arbitrarily as required for the shape that relates to heating unit, temperature measuring unit among the present invention and/or size.
Be described further below in conjunction with the manufacture process of specific embodiments and the drawings to the temperature resistance sensor of the embodiment of the invention.
Fig. 3 to Figure 16 is the cross-sectional view that the temperature of one embodiment of the present of invention hinders the manufacture process of sensor.It should be noted that these and follow-up other accompanying drawing all only as example, it is not to be to draw according to the condition of equal proportion, and should not be construed as limiting as the protection domain to actual requirement of the present invention with this.
This employing front etch mode is made the method for flow sensor, and manufacturing technology steps is as follows:
1) as shown in Figure 3, get a silicon base 001, the one deck of covering separation layer 100 is arranged above this substrate, this separation layer can be oxide, nitride etc.In this substrate 001 take silicon (Si) as example, but the base material that the present invention can adopt obviously is not limited to this, those skilled in the art can carry out mutually deserved adjustment according to the actual needs.
As shown in Figure 4, etching substrate 001 is formed for making the groove 002 of cavity in substrate 001, and the shape of its middle slot 002 and/or the degree of depth are adjustable (adjustable) according to actual needs.And from top view (not shown), the projection of groove 002 can make polygon (containing rectangle), also can be circular, also can be other shapes obviously, is not giving unnecessary details at this.
2) as shown in Figure 5, for example utilize CVD method on the surface of separation layer 100 and sidewall and deposit one deck barrier layer, bottom 101 of groove 002, also can adopt replacing such as methods such as atomic layer deposition methods of other, but the barrier layer of deposit 101 don't fail to cover the sidewall of groove 002.Therefore, those skilled in the art will appreciate which kind of deposition process of concrete employing depends on that can this kind method cover the sidewall of groove 002 well.
3) as shown in Figure 6, the barrier layer 101 of the bottom by returning surface that carving technology removes separation layer 100 fully and groove 002, the bottom that particularly will expose groove 002 is namely removed the barrier layer 101 of bottom fully.This barrier layer 101 is attached to the side wall protective layer that not removed part on the sidewall then becomes groove 002 in groove 002.
4) as shown in Figure 7; adopt etching technics; take side wall protective layer 101 as mask, continue etching groove 002, form deep trouth 102; the degree of depth of this deep trouth 102 can be 0.1～100um; in this process, because side wall protective layer 101 exists as the hard mask in the etching process, protect other zones; therefore, the etching condition of selection needs preferably etching selection ratio.
5) as shown in Figure 8, adopt wet etching method corrosion deep trouth 102, form cavity 010 in the inside of substrate 001.For example, select silicon as substrate, adopt KOH and/or the wet etching solution such as NaOH and/or EPW and/or TMAH that anisotropic (selectively) corrosion is carried out in substrate 001 during section's chamber etching within it, the cavity 010 of section's formation within it.Those skilled in the art can preferably adopt anisotropic etching process according to the actual needs, can certainly be other forms of corrosion.It should be noted that the cavity 010 that shows is the rectangle of rule in the cross section here, yet, it may be noted that at this, view only is in order to express easily, and the shape of the actual cavity that obtains 010 and/or the degree of depth are arbitrarily, and is closely-related with etching process, substrate and other aspects.The shape and/or the degree of depth that it should be appreciated by those skilled in the art cavity 010 are not restriction content of the present invention.
6) as shown in Figure 9; preferably between the side wall protective layer 101 of groove 002, fill up isolation and/or packing material 103 by techniques such as CVD method or atomic layer deposition methods; the for example polysilicon of individual layer or multilayer, silica; silicon nitride etc.; cavity 010 is isolated from the outside, utilizes simultaneously the heat-insulating material such as silica can reduce heat conduction between some specific region.
7) after filling is finished, as shown in figure 10, planarization is done on substrate 001 surface.
8) deposit electrothermal layer on silicon substrate 001.
9) by graphical, form all kinds of figures of metallic material at separation layer 100.The metallic material 107 of surperficial first deposit one deck on the barrier layer 100 after planarization, this layer material can be individual layer also can be multilayer, the metallic material that deposits is characterised in that can be as the material of electric calorifie installation in the situation of energising, and along with the variation of temperature, material list reveals resistivity along with the characteristic of variations in temperature.Metallic material can be Pt isothermal resistance material.Then, be formed for making the figure of heating unit, temperature measuring unit and electrode by semiconductor lithography and dry etching technology.Sectional view only is schematic diagram at this shown in Figure 11 a, is illustrated in the substrate to form not only to comprise and yet comprise temperature measuring unit 004 etc. by heating unit 003; As example, the top view of Figure 11 a as shown in figure 15.Can see, form heating unit 003 and temperature measuring unit 004 at separation layer, comprise in addition electrode 020.Need to explicitly point out at this, the heating unit that the present invention relates to and the shape of temperature measuring unit, layout, line size, thickness and the number of turns do not limit content of the present invention, can adjust according to different needs.
Shown in Figure 11 b, graphically also can the realizing by the following method of metal material.The surface on the barrier layer 100 after planarization is deposit one deck containing phosphorus silicon glassy layer (PSG) and one deck silicon nitride layer (Si successively
3N
4); Then, be formed for making the window of heating unit, temperature measuring unit and electrode by semiconductor lithography and dry etching technology.Accurately controlling under the prerequisite of etching time, utilizing a kind of buffer oxide silicon etch solution (BOE) formation such as the window 106 of Figure 12; Deposit Pt material as shown in figure 13, the final structure that forms as shown in figure 14 of method of peeling off by wet chemistry at last, the top view that it is corresponding such as Figure 15.Such as Figure 13, the detailed process that wet chemistry is peeled off is after the Pt deposit, utilize BOE with PSG together with the Si that is grown on the PSG
3N
4Come along with Pt and to remove.Need to explicitly point out at this, the materials at two layers and the corrosive liquid that are used to form window among the present invention obviously are not limited to above-mentioned PSG, Si
3N
4And BOE, its key is that selected corrosive liquid will have the selective of height to selected materials at two layers, namely corrode 104 layers and but do not corrode 105 layers, and selected corrosive liquid has isotropic etching characteristic to 104 materials, so those skilled in the art can carry out mutually deserved adjustment according to the actual needs.
10) deposition protective layer 108 can be the structure of individual layer or multilayer, as shown in figure 16.
On the basis of the structure that Figure 16 obtains, can encapsulate.Because sensor cluster will directly contact with the substrate of encapsulation by preferably substrate of thermal conductivity, therefore, the temperature of sensor will be subject to the interference of ambient temperature, so, to introduce ambient noise to the measurement of flow and temperature, cause the inaccurate of measurement, therefore just need sensor device unsettled.
Claims (12)
1. method that adopts the front etch mode to make flow sensor, it is characterized in that: manufacturing technology steps is as follows:
1) get a silicon substrate (001), there is one deck separation layer (100) of covering this silicon substrate (001) top; Adopt the dry etching method in described silicon substrate, to be formed for making the groove of cavity;
2) in the surface of described silicon substrate (001) and sidewall and the bottom barrier layer of described groove (002);
3) remove the barrier layer of the bottom of the surface of described silicon substrate (001) and described groove (002), form side wall protective layer (008) at the sidewall of described groove (002);
4) take described side wall protective layer (008) as mask, continue the described groove of etching (002), form deep trouth (102);
5) adopt the wet etching method to corrode described deep trouth (102), form cavity (010) in the inside of described silicon substrate (001);
6) between the side wall protective layer (008) of described groove (002), fill up isolation and/or packing material (006), form plug structure, described cavity (010) is isolated from the outside;
7) with the flattening surface of described silicon substrate (001);
8) at the upper deposit electrothermal layer of described silicon substrate (001);
9) described electrothermal layer is done graphically to form heater (003), temperature measuring equipment (004) and electrode (020) at described silicon substrate (001);
10) at the upper deposit protective layer (108) of described silicon substrate (001), described protective layer (108) covers described heater (003) and described temperature measuring equipment (004).
2. employing front etch mode according to claim 1 is made the method for flow sensor, it is characterized in that: the barrier layer described step 2) forms groove (002) deposition insulating layer before of making cavity (010).
3. employing front etch mode according to claim 1 is made the method for flow sensor, it is characterized in that: described silicon substrate is the silicon in (111) crystal orientation.
4. employing front etch mode according to claim 1 is made the method for flow sensor, it is characterized in that: the barrier layer described step 2) forms by CVD method or atomic layer deposition method.
5. employing front etch mode according to claim 1 is made the method for flow sensor, it is characterized in that: remove by returning carving technology on the barrier layer of the bottom of the surface of silicon substrate and described groove (002) in the described step 3).
6. employing front etch mode according to claim 1 is made the method for flow sensor, it is characterized in that: the degree of depth of deep trouth in the described step 4) (102) is 0.1～10um.
7. employing front etch mode according to claim 1 is made the method for flow sensor, it is characterized in that: the wet etching method in the described step 5) adopts anisotropic etching process to form cavity (010) in the inside of described silicon substrate (001); The used etchant solution of described wet etching is KOH and/or TMAH.
8. the employing front etch mode described in is according to claim 1 made the method for flow sensor, it is characterized in that: the filling isolation in the described step 6) and/or packing material are to fill isolation and/or packing material (006) by CVD method or atomic layer deposition method between the side wall protective layer (008) of described groove (002); Described isolation and/or packing material (006) are individual layer or sandwich construction.
9. the employing front etch mode described in is according to claim 1 made the method for flow sensor, it is characterized in that: the flatening process in the described step 7) comprises chemically mechanical polishing and/or returns and carve.
10. the employing front etch mode described in is according to claim 1 made the method for flow sensor, and it is characterized in that: described electrothermal layer is metallic material; Described electrothermal layer is structure individual layer or multilayer; Described metallic material is temperature resistance material.
11. employing front etch mode according to claim 10 is made the method for flow sensor, it is characterized in that: described temperature resistance material comprises platinum or gold.
12. employing front etch mode according to claim 1 is made the method for flow sensor, it is characterized in that: the protective layer in the described step 10) (108) is structure individual layer or multilayer.
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Cited By (5)
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| CN111247090A (en) * | 2017-09-15 | 2020-06-05 | 伯金公司 | Method for manufacturing micro-machined channel |
| CN112484800A (en) * | 2020-11-24 | 2021-03-12 | 中国科学院上海微系统与信息技术研究所 | Thermal reactor type gas mass flow sensor and preparation method thereof |
| CN112501593A (en) * | 2020-10-29 | 2021-03-16 | 长芯科技(上海)有限公司 | Manufacturing method of flow sensor chip |
| CN113654600A (en) * | 2021-07-23 | 2021-11-16 | 无锡莱斯能特科技有限公司 | Manufacturing method of flow sensor |
| CN114684777A (en) * | 2020-12-30 | 2022-07-01 | 上海新微技术研发中心有限公司 | Manufacturing method of MEMS (micro-electromechanical systems) thermal bubble printing head heating structure |
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Application publication date: 20130227 |