CN102315072A - Plasma processing apparatus and method of plasma processing - Google Patents

Plasma processing apparatus and method of plasma processing Download PDF

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Publication number
CN102315072A
CN102315072A CN2011101892619A CN201110189261A CN102315072A CN 102315072 A CN102315072 A CN 102315072A CN 2011101892619 A CN2011101892619 A CN 2011101892619A CN 201110189261 A CN201110189261 A CN 201110189261A CN 102315072 A CN102315072 A CN 102315072A
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electrode
plasma
interval
mentioned
processing apparatus
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CN2011101892619A
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深谷康太
大野茂
福田正行
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Hitachi High Tech Instruments Co Ltd
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Hitachi High Tech Instruments Co Ltd
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Priority claimed from JP2010262351A external-priority patent/JP2012033457A/en
Application filed by Hitachi High Tech Instruments Co Ltd filed Critical Hitachi High Tech Instruments Co Ltd
Publication of CN102315072A publication Critical patent/CN102315072A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32568Relative arrangement or disposition of electrodes; moving means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32128Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32541Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/3255Material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645Radiofrequency discharges

Abstract

The present invention provides a kind of plasma processing apparatus, and said plasma processing apparatus is easy to begin plasma discharge, perhaps can suppress the unnecessary power consumption that is caused by auxiliary plasma in the Cement Composite Treated by Plasma.The present invention provides a kind of plasma processing apparatus, and said plasma processing apparatus has: the 1st electrode; And above-mentioned the 1st electrode between generate the 2nd electrode of plasma; And above-mentioned the 1st electrode between generate the 3rd electrode of plasma; Gas importing portion, the space between above-mentioned the 1st electrode and the 2nd electrode, and above-mentioned the 1st electrode and the 3rd electrode between the space in import gas; Voltage application portion, between above-mentioned the 1st electrode and above-mentioned the 2nd electrode, and above-mentioned the 1st electrode and above-mentioned the 3rd electrode between apply voltage; The 1st interval change portion or the 2nd is change portion at interval, and said the 1st interval change portion changes the interval between above-mentioned the 1st electrode and the 2nd electrode, and said the 2nd interval change portion changes the interval between above-mentioned the 1st electrode and the 3rd electrode; Control part is controlled the interval change operation of above-mentioned the 1st interval change portion or the 2nd interval change portion and the voltage of above-mentioned voltage application portion and is applied operation.

Description

Plasma processing apparatus and method of plasma processing
Technical field
The present invention relates under atmospheric pressure or near the atmospheric pressure down object being treated irradiation plasma carried out surface-treated plasma processing apparatus and method of plasma processing; For example relate to the metal electrode of epoxy glass substrate and resin etc. are carried out Cement Composite Treated by Plasma, improve the surface-treated plasma processing apparatus and the method for plasma processing of the zygosity and the resin-bonding property of metal.
Background technology
Extensively adopted following method, that is, near atmospheric pressure, down, solid dielectric has been configured at least one side of parallel plate electrode, produced glow discharge plasma applying alternating voltage between electrode.When carrying out surface treatment to object being treated, the plasma that use utilizes said method to produce takes following manner: object being treated is configured on the grounding electrode face the direct plasma mode of direct irradiation plasma; And object being treated is configured on the open surface between parallel plate electrode, utilize the remote plasma mode of long-range supply plasma of air-flow or free radical.
Compare with the remote plasma mode, directly the distance from the plasma zone to object being treated is short in the plasma mode, so can supply to object being treated with electronics, ion and the free radical that high density will be born processing reaction.In addition, near the atmospheric pressure in the following glow discharge since electrode gap lack, so the area of parallel plate electrode is greater than the area of open surface.Because above-mentioned 2 kinds of effects, so direct plasma mode is compared processing reaction speed height with the remote plasma mode and processing area is big.
Directly in the plasma mode, the material of having reported object being treated all can produce the plasma processing apparatus of the planar plasma that can realize handling rapidly when being conductor or insulator.Following technology is disclosed in the patent documentation 1; Promptly; In 2 parallel plate electrodes; Apply between electrode and perpendicular opposed grounding electrode at electric field and to generate plasma, below electric field applies electrode, generate plasma continuously, use the plasma irradiating object being treated that below it, generates with this plasma.
Following technology is disclosed in the patent documentation 2; Promptly; Apply the electrode side with electric field and be adjacent to dispose electrode, after producing auxiliary plasma between above-mentioned 2 electrodes, apply the object being treated irradiation main plasma under the electrode being arranged at electric field as the auxiliary plasma earth electrode.Disclose following content in the patent documentation 2: the area of auxiliary plasma earth electrode is little, and auxiliary plasma earth electrode and the interval that adds between the electric power electrode are short, therefore, can begin and keep discharge with few energy.The something in common of patent documentation 1 and 2 said technology is; Be provided for disposing the grounding electrode of object being treated with electric field with applying electrode contraposition; In addition; Apply the electrode side at electric field supplementary ground electrode is set, apply between electrode and the supplementary ground electrode at electric field and generate auxiliary plasma.
[patent documentation 1] TOHKEMY 2007-237080 communique
[patent documentation 2] Japan special table 2007-525801 communique
Summary of the invention
In the technology of the auxiliary grounding electrode of the described use of background technology, electric field applies the fixed value that is spaced apart regulation between electrode and the supplementary ground electrode, even therefore also can produce auxiliary plasma in the process to object being treated irradiation plasma.The processing of object being treated is mainly born by the plasma that on object being treated, launches, so when the viewpoint of saving electric power and saving the energy was considered, the electric power that is used to keep above-mentioned auxiliary plasma was unnecessary or excessive electric power.
Consumes electric power to the auxiliary plasma in the above-mentioned patent documentation is studied.Judge from representative graph in the patent documentation 1, think since the area of auxiliary plasma for object being treated on area be equal to it about half, so auxiliary plasma accounts for about 1/4~1/2 of wastage in bulk or weight electric power.In the patent documentation 2, auxiliary plasma accounts for about 1/4 of wastage in bulk or weight electric power.
Therefore; The object of the present invention is to provide plasma surface processing device and method of plasma processing; Said plasma surface processing device and method of plasma processing are particularly in the whole planar Cement Composite Treated by Plasma of carrying out to object being treated; That is, when whole of object being treated carried out Cement Composite Treated by Plasma simultaneously, can begin discharge and produce auxiliary plasma with low electric power; Perhaps in the processing of object being treated, need not to produce and keep auxiliary plasma, suppress unwanted power consumption.
The present invention accomplishes in order to solve above-mentioned problem; In plasma processing apparatus; Have the 1st electrode, the 2nd electrode, the 3rd electrode and interval change portion; Said the 2nd electrode and above-mentioned the 1st electrode between generate plasma; Said the 3rd electrode and above-mentioned the 1st electrode between generate plasma; Said interval change portion changes interval or the interval between above-mentioned the 1st electrode and above-mentioned the 3rd electrode between above-mentioned the 1st electrode and above-mentioned the 2nd electrode, and it is different with the interval between above-mentioned the 2nd electrode with above-mentioned the 1st electrode during Cement Composite Treated by Plasma to make when beginning to discharge, or different with the interval between above-mentioned the 3rd electrode with above-mentioned the 1st electrode during Cement Composite Treated by Plasma when beginning to discharge.
According to the present invention, can reduce electric power required when beginning to discharge.Perhaps, can be suppressed at the unwanted power consumption that causes by auxiliary plasma in the Cement Composite Treated by Plasma, object being treated is carried out Cement Composite Treated by Plasma.
Description of drawings
[Fig. 1] is the stereogram of the plasma processing apparatus of the 2nd execution mode of the present invention.
[Fig. 2] is the stereogram of the mode in object being treated when exchange in the plasma processing apparatus of expression the 2nd execution mode of the present invention.
[Fig. 3] is the front cross-sectional view of the plasma processing apparatus of the 1st execution mode of the present invention.
[Fig. 4] is the stereogram of the gas gatherer of the plasma processing apparatus of expression the 1st execution mode of the present invention.
[Fig. 5] is the sectional view of gas importing portion of the plasma processing apparatus of the 1st execution mode of the present invention.
[Fig. 6] is for changing the front cross-sectional view of the mode of electrode gap in the plasma processing apparatus of explanation the 1st execution mode of the present invention.
[Fig. 7] is for changing the front cross-sectional view of the mode of electrode gap in the plasma processing apparatus of explanation the 1st execution mode of the present invention.
[Fig. 8] is the front cross-sectional view of the plasma processing apparatus of the 2nd execution mode of the present invention.
[Fig. 9] is the front cross-sectional view of the plasma processing apparatus of the 3rd execution mode of the present invention.
[Figure 10] is the front cross-sectional view of the plasma processing apparatus of the 4th execution mode of the present invention.
[Figure 11] is the amplification front cross-sectional view of the rotary body that includes grounding electrode of the plasma processing apparatus of the 4th execution mode of the present invention.
[Figure 12] is the front cross-sectional view of the plasma processing apparatus of the 5th execution mode of the present invention.
[Figure 13] is the stereogram of the grounding electrode that is used to explain the 5th execution mode of the present invention.
[Figure 14] is the stereogram of the grounding electrode variation that is used to explain the 5th execution mode of the present invention.
[Figure 15] is the front cross-sectional view of the plasma processing apparatus of the 6th execution mode of the present invention.
[Figure 16] is the amplification front cross-sectional view of the rotary body that includes grounding electrode of the plasma processing apparatus of the 6th execution mode of the present invention.
[Figure 17] is the amplification front cross-sectional view of the variation of the rotary body that includes grounding electrode of the plasma processing apparatus of the 6th execution mode of the present invention.
Symbol description
1 electric field applies electrode; 2 grounding electrodes; 3 grounding electrodes; The 3a grounding electrode; The 3b grounding electrode; The 3c grounding electrode; The 3d grounding electrode; The 4a dielectric; The 4b dielectric; The 4c dielectric; 5 insulators; 6 AC powers; 7a is change portion at interval; 7b is change portion at interval; 8 stands; 9 plasmas zone; 10 gas limiting walls; 11 gas limiting walls; 12 mobile devices; 13 include the rotary body of grounding electrode; The 13a insulator; The 13b rotating shaft; 14 rotary body supporting masses; 15 gas gatherers; 15a gas importing portion; 15b gas limiting wall; 15c gas limiting wall; The 15d gas supply pipe; 20 control parts; 30 object being treateds.
Embodiment
Below use description of drawings execution mode of the present invention.
(the 1st execution mode)
Fig. 1 is the stereogram of the plasma processing apparatus of the 2nd execution mode; Be from the observed figure of front face side; If remove the gas limiting wall 10 among Fig. 1; Then the plasma processing apparatus with the 1st execution mode is identical, so use Fig. 1 that the plasma processing apparatus of the 1st execution mode is described briefly.
Among Fig. 1,1 applies electrode for electric field.2 is the grounding electrode that applies electrode 1 opposite disposed with electric field.30 for the object being treated as the Cement Composite Treated by Plasma object, is loaded on the grounding electrode 2.3 for being arranged at the grounding electrode at grounding electrode 2 two ends with the mode that is independent of grounding electrode 2.
Under the state of Fig. 1, at first make grounding electrode 3 apply electrode 1 near electric field, apply the discharge (plasma discharge) that begins to be used to produce plasma between electrode 1 and the grounding electrode 3 at electric field.Afterwards, make and carry grounding electrode 2 risings that are equipped with object being treated 30, make it apply electrode 1, apply between electrode 1 and the grounding electrode 2 at electric field and produce plasma, object being treated 30 is carried out Cement Composite Treated by Plasma near electric field.After the Cement Composite Treated by Plasma of object being treated 30 finishes, as shown in Figure 2, through untreated object being treated 30a is delivered on the grounding electrode 2, from plasma processing apparatus, take out the object being treated 30 after handling.Need to prove, in this execution mode,, use the plasma that utilizes glow discharge to produce in order to suppress damage to object being treated 30.The stereogram of the mode when Fig. 2 exchanges for the expression object being treated is the plasma processing apparatus of the 2nd execution mode, if remove the gas limiting wall 10 among Fig. 2, then the plasma processing apparatus with the 1st execution mode is identical.
Then, utilize Fig. 3 that the plasma processing apparatus of the 1st execution mode at length is described.
Among Fig. 3,1 is the 1st electrode, is that the electric field that links to each other with an end of AC power 6 applies electrode.Make the other end ground connection of AC power 6.In this execution mode, stationary electric field applies the height of electrode 1.2 is the 2nd electrode, is to apply the grounding electrode that electrode 1 is provided with opposed to each other with electric field.3 is the 3rd electrode, is to be independent of grounding electrode 2 and to apply the grounding electrode that electrode 1 is provided with opposed to each other with electric field.In this execution mode, grounding electrode 3 is set up with the mode adjacent with the both sides of grounding electrode 2, but also can be only at the one-sided grounding electrode 3 that is provided with of grounding electrode 2.
Electric field applies electrode 1, grounding electrode 2, reaches grounding electrode 3 for example for the metal of aluminium (Al) or stainless steel and so on, is the tabular object that is formed by the high material of the conductivity that is commonly referred to as conductor.
30 for the object being treated as the Cement Composite Treated by Plasma object, is loaded on the grounding electrode 2.Object being treated 30 any tabular object for forming by low material that is commonly referred to as insulator of conductivity such as conductor such as metal or glass or their composite material.In this execution mode, suppose that object being treated 30 for example is the low materials of conductivity such as glass, resin.
4a is the dielectric that is arranged on the face of grounding electrode 2 one sides of face and insulator 5 of grounding electrode 2 one sides that electric field applies electrode 1.4b be arranged on grounding electrode 3 top, promptly apply the dielectric on opposed of electrode 1 one sides with the electric field of grounding electrode 3.Object being treated 30 is under the situation of conductors such as metal, dielectric 4b also can be set at grounding electrode 2 above.
Dielectric 4a and dielectric 4b are the tabular object that is formed by insulators such as aluminium oxide, glass or polyimides.In order to realize dielectric barrier discharge, the thickness that preferably makes dielectric 4a and dielectric 4b is 0.1~1mm.
5 for be arranged at do not comprise with 2 opposed of grounding electrodes, electric field applies the insulator around the electrode 1.Insulator 5 is the object that is likewise formed by insulators such as aluminium oxide, glass or polyimides with dielectric 4, and thickness is preferably more than the 10mm.Its reason is, improves electrical insulating property through thickness is increased fully, around insulator 5, does not produce high electric field.As a result, can be only electric field apply electrode 1 and grounding electrode 2, and the space that applies between electrode 1 and the grounding electrode 3 of electric field produce high electric field.
6 apply the high-tension AC power that applies between electrode 1 and the grounding electrode 3 more than the 1kV for applying between electrode 1 and the grounding electrode 2 at electric field, reaching at electric field, are voltage application portion.The frequency of AC power 6 is more than the 1kHz, for example can be the high-frequency of 13.56MHz.The voltage waveform of AC power 6 can be sine wave or square wave and so on impulse wave, perhaps also can carry out the voltage waveform that amplitude modulation obtains to above-mentioned AC wave shape for utilizing impulse wave, and said impulse wave has the repetition rate that is lower than said AC wave shape.AC power 6 applies electrode 1 through electrical lead and electric field and is connected, and applies at AC power 6 and electric field to have the match circuit (not shown) that is used for impedance matching between the electrode 1.Also can make electrode 1 ground connection on the contrary with being connected of Fig. 3, electrode 2 is connected with AC power 6 with electrode 3, but electrode 1 is connected with AC power 6, when making electrode 2, owing to the electrode that is connected with AC power tails off, so preferred with electrode 3 ground connection.
7a is the 1st interval change portion of the height of grounding electrode 2 for a change.Utilize the 1st interval change 7a of portion, can change electric field and apply the interval between electrode 1 and the grounding electrode 2.7b is the 2nd interval change portion of the height of grounding electrode 3 for a change.Utilize the 2nd interval change 7b of portion, can change electric field and apply the interval between electrode 1 and the grounding electrode 3.
At interval the change 7a of portion, 7b are the lowering or hoisting gear of jack of being used to that loading parts are on it gone up in single shaft direction (vertical direction) and going up and down and so on.Utilize this device, can change electric field that the position is fixed apply interval t1 between electrode 1 and the grounding electrode 3, and electric field apply the interval t2 between electrode 1 and the grounding electrode 2.Strictly speaking, as shown in Figure 3 in this execution mode, t1 is below the dielectric 4a and the distance between above the dielectric 4b, and t2 is below the dielectric 4a and the distance between above the grounding electrode 2.When covering above the grounding electrode 2 with dielectric 4b, t2 becomes below the dielectric 4a and the distance between the dielectric 4b.
8 for being used to support change portion 7 and the stand that disposes parts on it at interval.9 space or the electric fields that apply between electrode 1 and the grounding electrode 2 for electric field apply the space between electrode 1 and 3, are the plasma zones that produces plasma.
20 for control the above-mentioned the 1st at interval change portion and the 2nd at interval the intervals of change portion change operation, and above-mentioned voltage application portion apply the control part that constitutes each structural portion of plasma processing apparatus such as voltage-operated.Control part 20 has acceptance from the operating portion (not illustrating) of operator's indication and the display part (not illustrating) of demonstration treatment situation or wrong situation occurred etc.
Then, to describing for generation plasma in plasma zone 9 is used for importing the gas gatherer of handling gas (process gas).Fig. 4 horizontally rotates the state behind 180 degree for expression with the plasma processing apparatus of Fig. 1; Be the figure of the plasma processing apparatus of the 1st execution mode that arrives of unilateral observation from behind, be the stereogram of the gas gatherer 15 of the plasma processing apparatus of representing the 1st execution mode.In Fig. 4,15a is a gas importing portion, and 15b, 15c are the gas limiting wall, and 15d is a gas supply pipe.The end of gas supply pipe 15d is connected with the gas importing 15a of portion, and the other end is connected with processing gas supply source (not illustrating).Fig. 5 represent from the left sides of Fig. 4 to figure.Fig. 5 is the sectional view of gas gatherer 15 of the plasma processing apparatus of the 1st execution mode.Fig. 5 (a) applies the approaching situation of electrode 1 and grounding electrode 2 for electric field, Fig. 5 (b) for electric field apply electrode 1 and grounding electrode 2 away from situation.
In Fig. 5, processing gas is directed to electric field from gas supply pipe 15d through the gas importing 15a of portion and applies the space between electrode 1 and the grounding electrode 2.Handle gas from a side grounding electrode 3, object being treated 30, reach direction that the opposing party's grounding electrode 3 directions arranged side by side intersect, promptly be imported into to the front side from Fig. 1 trailing flank.The formation of handling gas is with helium (He), argon rare gas or nitrogen (N such as (Ar) 2) be main, for object being treated 30 is carried out desired processing such as oxidation and reduction, mix oxygen (O 2), hydrogen (H 2) wait atom after dissociating can become the reactant gas of spike.
Below utilize Fig. 6 that the concrete processing operation of the plasma processing apparatus in the 1st execution mode is described.The processing operation of plasma processing apparatus is controlled through control part 20.Fig. 6 changes the front cross-sectional view of the mode of electrode gap in the plasma processing apparatus of the 1st execution mode for explanation.At first, shown in Fig. 6 (a), below grounding electrode 2 is positioned at, under the state of grounding electrode 3 above being positioned at, uploads at grounding electrode 2 and to put object being treated 30.At this moment, electric field applies interval t1 between electrode 1 and the grounding electrode 3 for enough little interval, begins plasma discharge so that apply between electrode 1 and the grounding electrode 3 at electric field.In addition, the interval t2 that electric field applies between electrode 1 and the grounding electrode 2 is enough big intervals, can not begin plasma discharge so that apply between electrode 1 and the grounding electrode 2 at electric field.Therefore, t1 compares with the interval, and t2 is enough big at interval.Preferably t1 is made as 0.5~2mm, t2>10mm at interval.Afterwards, electric field is applied when applying electric field between electrode 1 and grounding electrode 2 and the grounding electrode 3, apply between electrode 1 and the grounding electrode 3 at electric field and begin plasma discharge, begin to produce plasma.At this moment, the interval t2 that electric field applies between electrode 1 and the grounding electrode 2 is enough big, so that can not begin plasma discharge, therefore, applies between electrode 1 and the grounding electrode 2 at electric field and can not begin plasma discharge.
For the electric power that is used to produce plasma, interelectrode electrostatic capacitance is more little, and interelectrode distance is more little, and it is big more that the electric field when applying electric power becomes, and required electric power becomes more little.That is, the area of grounding electrode is more little, and the distance that applies electrode with electric field is more little, and the electric power that can be used in the generation plasma is more little.But, consider at grounding electrode and upload when putting object being treated, must guarantee electrode area and interelectrode interval to a certain extent.Therefore, in this execution mode, the grounding electrode 3 through being provided for producing plasma respectively with carry the grounding electrode 2 of putting object being treated, can reduce the electric power when producing plasma.
In this execution mode; The electric field of beginning during plasma discharge applies that electrostatic capacitance between electrode and the grounding electrode is approximate to depend on that electric field applies the electrostatic capacitance between electrode 1 and the grounding electrode 3; With compare to reduce at interval the situation (situation of following Fig. 6 (b)) of t2 with t1 equal extent ground; Because electrostatic capacitance is little, uprise so apply the voltage that produces under the situation of alternating current of regulation between to electrode.As a result, even the area of grounding electrode 2 is bigger, also can with small electric power electric field apply begin between electrode 1 and the grounding electrode 3 discharge.
Electric field apply begin between electrode 1 and the grounding electrode 3 discharge after; When for example using argon gas or nitrogen as processing gas; In order not form streamer-discahrge, reduce that electric field is applied the voltage that electrode 1 applies, making voltage is the voltage that can keep the degree of plasma discharge (glow discharge); Shown in Fig. 6 (b), make grounding electrode 2 apply electrode 1 near electric field.In this execution mode, grounding electrode 2 is risen.At this moment, begin plasma discharge in order to apply at electric field between electrode 1 and the grounding electrode 2, making at interval, t2 is enough little interval.Preferred t1=t2.As stated; When dwindling electric field and applying the interval t2 between electrode 1 and the grounding electrode 2; Apply the also unfolded plasma that produces between electrode 1 and the grounding electrode 3 that applies at electric field between electrode 1 and the 2nd grounding electrode 2 at electric field; Under the voltage of the degree that can keep plasma discharge, apply between electrode 1 and the 2nd grounding electrode 2 at electric field and to begin plasma discharge.Upload when putting object being treated 30 at grounding electrode 2, object being treated 30 is utilized the surface treatment of plasma.
Need to prove; When using helium as processing gas; Because it is wide to form the electric field scope of glow discharge,, electric field is not applied the voltage that electrode 1 applies thereby need not regulate so in the electric field scope of glow discharge, begin discharge and can keep plasma discharge.When using argon gas or nitrogen as processing gas; Owing to form the electric field narrow range of glow discharge; So the electric field scope at streamer-discahrge begins discharge; In order in the electric field scope of glow discharge, to keep discharge, after beginning discharge, reduce that electric field is applied the voltage that electrode 1 applies as described above.
After launching discharge on the grounding electrode 2, shown in Fig. 6 (c), grounding electrode 3 is applied electrode 1 away from electric field, the interval t1 that electric field is applied between electrode 1 and the grounding electrode 3 increases.In this execution mode, grounding electrode 3 is descended.Along with increasing t1 at interval, electric field applies the electric field that produces between electrode 1 and the grounding electrode 3 to be reduced.When this electric field descended the value of stipulating, the discharge that electric field applies between electrode 1 and the grounding electrode 3 stopped.As a result, only apply electrode 1 and dispose between the grounding electrode 2 of object being treated 30 and keep discharge at electric field, the consumes electric power under the above-mentioned situation is lower than also and applies the electric power under the situation of keeping discharge between electrode 1 and the grounding electrode 3 at electric field.Promptly; Move Cement Composite Treated by Plasma in sequence according to grounding electrode according to this execution mode; Compare with apply the situation of keeping plasma between electrode and the auxiliary electrode (being grounding electrode 3 in this example) at electric field, can realize the plasma surface treatment of object being treated with small electric power.
After the object being treated Cement Composite Treated by Plasma of 30 completion stipulated times, keep the state shown in Fig. 6 (c), begin the processing of next object being treated 30.As shown in Figure 2, the mode so that the object being treated 30 that will accomplish processing is extruded is transported to next object being treated 30a on the grounding electrode 2.Under the above-mentioned situation, interruptedly do not exist across plasma zone 9,, can keep keeping the required high value of discharge so the electric field that electric field applies between electrode 1 and the grounding electrode 2 does not reduce because object being treated 30 applies electrode 1 with respect to electric field.As a result, in this execution mode,, also can not stop discharge ground and continue Cement Composite Treated by Plasma even under the situation of exchange object being treated 30.
When finishing Cement Composite Treated by Plasma, under the state of Fig. 6 (c), stop to import and handle gas, stop in addition electric field applied between electrode 1 and the grounding electrode 2 and apply electric field, stop plasma discharge.Afterwards, make grounding electrode 3 move to the top, make grounding electrode 2 move to the below, be the state shown in Fig. 6 (a), be used for next Cement Composite Treated by Plasma.
Need to prove, in the above-mentioned explanation shown in Fig. 6 (a), reducing under the state that electric field applies the interval t1 between electrode 1 and the grounding electrode 3; After electric field applies between electrode 1 and the grounding electrode 3 the beginning plasma discharge; Then shown in Fig. 6 (b), make grounding electrode 2 apply electrode 1, apply between electrode 1 and the 2nd grounding electrode 2 at electric field and also produce plasma near electric field; Then shown in Fig. 6 (c); Make grounding electrode 3 apply electrode 1 away from electric field, the interval that electric field is applied between electrode 1 and the grounding electrode 3 increases, and stops electric field and applies the plasma discharge between electrode 1 and the grounding electrode 3; Only apply electrode 1 and dispose between the grounding electrode 2 of object being treated 30 and keep plasma discharge, also can omit the operation shown in Fig. 6 (c) for this reason at electric field.
Omit under the situation of the operation shown in Fig. 6 (c); Can't suppress the unwanted power consumption that produces by auxiliary plasma, but can the stable plasma state when the discharge beginning, in addition; When the discharge beginning, be easy to suppress arc discharge, therefore be easy to suppress damage object being treated.
In addition, at Fig. 6 (a) before, setting makes grounding electrode 2 and grounding electrode 3 all be positioned at the stage of below, in this stage, also can upload at grounding electrode 2 and put object being treated 30.Under the above-mentioned situation, grounding electrode 2 upload put object being treated 30 after, shown in Fig. 6 (a), make grounding electrode 3 move to the top, reduce electric field and apply the interval t1 between electrode 1 and the grounding electrode 3, when applying electric field the importing gas.
In addition, as shown in Figure 7, what also can not change the grounding electrode 2 that disposes object being treated 30 carries out Cement Composite Treated by Plasma to heavens.Under above-mentioned situation, stationary electric field applies the height of electrode 1 and grounding electrode 2.Fig. 7 changes the front cross-sectional view of the mode of electrode gap in the plasma processing apparatus of the 1st execution mode for explanation.At first, shown in Fig. 7 (a), apply under the less state of interval t1 between electrode 1 and the grounding electrode 3, upload at grounding electrode 2 and put object being treated 30 at electric field.At this moment; T1 compares with the interval; The interval t2 that electric field applies between electrode 1 and the grounding electrode 2 is bigger; But at interval t1 be for applying the interval of beginning plasma discharge between the electrode 1 at grounding electrode 3 and electric field, and t2 can apply the interval that begins plasma discharge between the electrode 1 at grounding electrode 2 and electric field for the plasma that applies generation between electrode 1 and the grounding electrode 3 at electric field applies when launching between the electrode 1 at grounding electrode 2 and electric field at interval.
Then, under the state of Fig. 7 (a), apply when applying electric field between electrode 1 and grounding electrode 2 and the grounding electrode 3, apply between electrode 1 and the grounding electrode 3 at electric field at first and begin plasma discharge at electric field.As stated, apply the plasma that produces between electrode 1 and the grounding electrode 3 at electric field and also apply expansion between electrode 1 and the 2nd grounding electrode 2 at electric field, electric field applies between electrode 1 and the 2nd grounding electrode 2 and also produces plasma discharge.Upload under the situation of putting object being treated 30 at grounding electrode 2, object being treated 30 is utilized the surface treatment of plasma.
After launching discharge on the grounding electrode 2, shown in Fig. 7 (b), do not change t2 (t2=t0) at interval, increase t1 at interval, stop electric field and apply the discharge between electrode 1 and the grounding electrode 3.As a result, only apply electrode 1 and dispose between the grounding electrode 2 of object being treated 30 and keep discharge at electric field.Therefore, can suppress the unwanted power consumption that produces by auxiliary plasma.As stated, can omit the change 7a of portion at interval, device is oversimplified.
(the 2nd execution mode)
Then, utilize Fig. 8 that the plasma processing apparatus of the 2nd execution mode is described.Fig. 8 is the front cross-sectional view of the plasma processing apparatus of the 2nd execution mode.In the 2nd execution mode, be to be provided with gas limiting wall 10 with the difference of the 1st execution mode.In addition, identical with the 1st execution mode, therefore omit explanation.
Like Fig. 8 and shown in Figure 1, gas limiting wall 10 surrounds the plasma regional 9 that is formed by electrode 1,2,3 etc.Gas limiting wall 10 is the object that is formed by insulators such as aluminium oxide, glass or polyimides with insulator 5 identically.Thus, apply between electrode 1 and the gas limiting wall 10 at electric field and can not produce high electric field, can suppress to be deployed into generations beyond the object being treated 30 and undesired discharge.Gas limiting wall 10 restriction gases flow out to from plasma zone 9 to be handled outside the space, and the result can import in the plasma zone 9 handling gas effectively.Open the mode in the MIN space of the operation that does not hinder grounding electrode 3 with sky, gas limiting wall 10 is configured in the outside of grounding electrode 3.Therefore, can carry out the processing operation identical with the 1st execution mode.
(the 3rd execution mode)
Then, utilize Fig. 9 that the plasma processing apparatus of the 3rd execution mode is described.Fig. 9 is the front cross-sectional view of the plasma processing apparatus of the 3rd execution mode.In the 3rd execution mode, be to be provided with gas limiting wall 11 with the difference of the 2nd execution mode.In addition, identical with the 2nd execution mode, therefore omit explanation.
Gas limiting wall 11 moves to the direction (horizontal direction) that applies the plane of electrode 1 along electric field through head 12.Of above-mentioned the 1st execution mode, can produce make grounding electrode 2 near electric field apply electrode 1 and grounding electrode 3 away from state.Under above-mentioned state; The plasma processing apparatus of the 1st and the 2nd execution mode imports under the situation of handling gas; Handle gas and be easy in the space that is applied electrode 1 and grounding electrode 3 clampings by the bigger electric field in interval, flow, the processing gas that is not used for the processing of handled object 30 effectively becomes many.In order to address the above problem, grounding electrode 3 is applied away from electric field under the situation of electrode 1, limiting wall 11 is moved to the position that covers grounding electrode 3.At this moment, as shown in Figure 9, the apparent height of preferred handled object 30 is identical with the apparent height of limiting wall 11, and the surface of the surface of handled object 30 and limiting wall 11 is same plane.As a result, the effect of the guide wall of limiting wall 11 performance air-flows, the limit processing gas flow can import in the plasma zone 9 handling gas near the grounding electrode 3 effectively.
Need to prove, make 11 activities of gas limiting wall in the present embodiment, the gas limiting wall is also can inertia under the situation of insulator.Under the above-mentioned situation, in Fig. 9, gas limiting wall 11 is fixed with the state that is inserted into electric field and applies between electrode 1 and the grounding electrode 3.When on grounding electrode 3, producing plasma, grounding electrode 3 is risen and near to the position that applies clamping gas limiting wall 11 between the electrode 1 at grounding electrode 3 and electric field.When only on grounding electrode 2, producing plasma, grounding electrode 3 descends, and applies electrode 1 away from electric field.At this moment, because gas limiting wall 11 does not move, so gas flow path does not enlarge, because gas limiting wall 11 is an insulator, so little to the influence that produces plasma, plasma is maintained on the grounding electrode 2 in addition.
(the 4th execution mode)
In above-mentioned the 3rd execution mode, make the mobile device of movement of objects have a plurality of interval change portions 7 and head 12.Therefore, it is complicated that the structure of plasma processing apparatus becomes, possible aggrandizement apparatus expense.In order to address the above problem; Provide the device realizing the method for following 2 kinds of functions and be used for it with 1 mobile device as the 4th execution mode; Said function comprises that reducing electric field applies the electric field between electrode 1 and the grounding electrode 3, stops the function of unwanted discharge; And limit processing gas flows to the overseas function of plasma slab.
Utilize Figure 10 and Figure 11 that the plasma processing apparatus of the 4th execution mode is described.Figure 10 is the front cross-sectional view of the plasma processing apparatus of the 4th execution mode.Figure 11 is the amplification front cross-sectional view of the rotary body that includes grounding electrode of the plasma processing apparatus of the 4th execution mode.In the 4th execution mode, have the rotary body 13 and the rotary body supporting mass 14 that include grounding electrode and replace grounding electrode 3 and the interval change 7b of portion in the 1st execution mode.In addition, identical with the 1st execution mode.The grounding electrode 3a that the rotary body 13 that includes grounding electrode is included by columned insulator 13a, with the state that departs from a columned part, and the axle 13b of rotary body constitute.Insulator 13a and rotary body supporting mass 14 likewise is made up of any material of performance as the function of insulator with insulator 5, and then grounding electrode 3a and grounding electrode 3 likewise are made up of any material of bringing into play as the function of conductor.In the example of Figure 10, the vertical cross-section of grounding electrode 3a is a rectangle, and is tabular for what extend along the axle 13b direction of rotary body.In addition, rotating shaft 13b is set to apply with electric field the electrode surface almost parallel of electrode 1 or grounding electrode 2.
Likewise be divided into from discharge with the described content of the 1st execution mode and begin, describing handling operation to the stage of the plasma irradiating of object being treated 30.During the discharge beginning, make rotary body 13 rotations, make grounding electrode 3a more apply electrode 1 near electric field than grounding electrode 2.At this moment, set rotary body 13 towards (position of rotation), make grounding electrode 3a apply electrode 1 near electric field.Owing to make grounding electrode 3a apply electrode 1,, begin discharge so apply the high electric field of generation between electrode 1 and the electrode 3a at electric field near electric field.
Then, make and carry the grounding electrode 2 be equipped with object being treated 30 and apply electrode 1, apply between electrode 1 and the grounding electrode 2 at electric field and also produce plasma, with plasma irradiating object being treated 30 near electric field.After making plasma irradiating arrive object being treated 30, rotation rotary body 13, grounding electrode 3a are in the state that applies electrode 1 away from electric field.As stated, apply the interval between electrode 1 and the grounding electrode 3a through increasing electric field, the electric field that electric field applies between electrode 1 and the grounding electrode 3a reduces.As a result, the discharge that applies between electrode 1 and the grounding electrode 3a of electric field stops.Through stopping discharge, can suppress operational processes is not had the unnecessary power consumption of contribution.In addition, even change the position of grounding electrode 3a, the space of handling gas flow does not change yet, and therefore, can supply in the plasma zone 9 handling gas effectively.Need to prove that in this execution mode, insulator 13a is cylindric, as long as but can rotate, can suitably change prism-shaped etc. into.
(the 5th execution mode)
In above-mentioned the 1st execution mode to the 4 execution modes, through the modifier structure, the electric field that electric field reduces or the discharge beginning is required in the time of can causing the discharge beginning increases.The former is caused by following 2 kinds of reasons.So the 1st reason is that for cost degradation uses the low power supply of maximum output power the electric power that applies the when result discharges beginning reduces.The 2nd reason is that in order to handle area widely, for example going up at the fore-and-aft direction (length direction of grounding electrode 3) of Fig. 1 increases the area that electric field applies electrode 1, meanwhile increases the area of grounding electrode 3.On the other hand, the latter uses nitrogen equimolecular property gas to cause as handling gas through not using rare gas such as helium or argon.
Cause when the electric field that electric field reduces or the discharge beginning is required when above-mentioned discharge begins increases that (t1=0.5~2mm) applies at electric field and can not cause between electrode 1 and the grounding electrode 3 that discharge begins with the electrode gap t1 shown in Fig. 6 (a).To the problems referred to above, making electrode gap t1 sometimes is effective less than the countermeasure of the scope of 0.5~2.0mm.When dwindling t1, the electric field that produces between electrode increases.But, on the other hand, also produce following unfavorable condition, that is, be difficult to processing gas is supplied between electrode, or reduce the electrode gap lower limit that can discharge.Electrode gap is 0.05mm when following, is difficult to keep plasma, and the possibility of result causes can't begin and keep discharge.
In order to address the above problem; Provide following electrode structure as the 5th execution mode; Said electrode structure does not rely on the condition that provides in the above-mentioned modifier structure (apply area that electric power, electric field applies electrode 1, and handle gaseous species); And excessively do not dwindle electrode gap, apply at electric field and produce high electric field between electrode 1 and the grounding electrode 3.
Utilize Figure 12 that the plasma processing apparatus of the 5th execution mode is described.Figure 12 is the front cross-sectional view of the plasma processing apparatus of the 5th execution mode.Compare with the 1st execution mode, the grounding electrode 3b that in the 5th execution mode, has convex shape replaces grounding electrode 3.With applying on opposed of electrode 1 one sides of grounding electrode 3b dielectric 4c is being set with electric field.In addition, identical with the 1st execution mode, therefore omit explanation.
4b is same with dielectric, the tabular object of dielectric 4c for constituting by insulators such as aluminium oxide, glass or polyimides, and in order to realize dielectric barrier discharge, its thickness is preferably 0.1~1mm.Through covering the dielectric 4c of projected electrode, be easy to cause glow discharge, can not raise even carry out the electric field of discharge space yet, therefore can under undamaged situation, handle object being treated 30.
Grounding electrode 3b is a convex shape, so compare with the grounding electrode 3 of the 1st~4 execution mode, to apply the opposed area of electrode 1 one sides little with electric field.In addition, for grounding electrode 3b, the front end of bar-shaped grounding electrode 3b forms the convex shape than other parts of fine, applies the opposed part of electrode 1 one sides than other parts of fine with electric field.Therefore, electric field focuses near the protruding front end, and the electric field of writing board shape apply between the electrode 1, cause electric filed enhanced effect.As a result, compare, can between electrode, produce higher electric field with the situation of parallel plate electrode.
Can produce high electric field when projected electrode is attenuated, but when making projected electrode meticulous, be difficult to control the electric field that is used to keep glow discharge.Therefore, suppose protruding front end be shaped as curved surface the time, preferably making curvature is about 10~1000 (1/m).
Shown in figure 13, for grounding electrode 3b, can the columned electrode bar-shaped, for example front end point of many front end points be configured in the both sides of grounding electrode 2 respectively, also can only be configured in the one-sided of grounding electrode 2 with 1.Perhaps, shown in figure 14, grounding electrode 3b also can form the mountain range shape on the top of the cuboid of having fined away.Figure 13 is the stereogram that is used to explain the grounding electrode 3b of the 5th execution mode of the present invention shown in Figure 12; Figure 14 is the stereogram of variation that is used to explain the grounding electrode 3b of the 5th execution mode of the present invention; All omit the record of dielectric 4c, in addition, omit the record that electric field applies electrode 1 grade.
(the 6th execution mode)
Then, utilize Figure 15 to Figure 17 that the plasma processing apparatus of the 6th execution mode is described.Figure 15 is the front cross-sectional view of the plasma processing apparatus of the 6th execution mode.Figure 16 is the amplification front cross-sectional view of the rotary body that includes grounding electrode of the plasma processing apparatus of the 6th execution mode.Figure 17 is the amplification front cross-sectional view of variation of the rotary body that includes grounding electrode of the plasma processing apparatus of the 6th execution mode.In the 6th execution mode, be to be set to include front end with the difference of the 4th execution mode and replace grounding electrode 3a than the grounding electrode 3c or the 3d of the convex shape of other parts of fine.In addition, identical with the 4th execution mode, therefore omit explanation.
Shown in figure 16, the vertical cross-section of grounding electrode 3c is oval, and shown in figure 17, the vertical cross-section of grounding electrode 3d is a triangle, is with electric field and applies the convex shape that electrode 1 an opposed side attenuates.Make grounding electrode 3c or 3d and the electric field of convex shape apply electrode 1 when opposed as stated, cause electric filed enhanced effect.As a result, electric field applies the electric field increase between electrode 1 and grounding electrode 3c or the 3d.Can grounding electrode 3c or 3d be provided with along the rotating shaft 13b of the rotary body that includes grounding electrode 13 continuously, also can as the stick electrode 3b of the Figure 13 in the 5th execution mode, be provided with discretely.
Need to prove, comprise following invention in this specification at least.That is, the 1st invention is a plasma processing apparatus, it is characterized in that having:
The 1st electrode;
The 2nd electrode, and above-mentioned the 1st electrode between produce plasma;
The 3rd electrode, and above-mentioned the 1st electrode between produce plasma;
Gas importing portion, the space between above-mentioned the 1st electrode and above-mentioned the 2nd electrode, and above-mentioned the 1st electrode and above-mentioned the 3rd electrode between the space in import gas; With
Voltage application portion, between above-mentioned the 1st electrode and above-mentioned the 2nd electrode, and above-mentioned the 1st electrode and above-mentioned the 3rd electrode between apply voltage, in above-mentioned plasma processing apparatus, also have:
The 1st interval change portion or the 2nd is change portion at interval, and said the 1st interval change portion changes the interval between above-mentioned the 1st electrode and above-mentioned the 2nd electrode, and said the 2nd interval change portion changes the interval between above-mentioned the 1st electrode and above-mentioned the 3rd electrode; With
Control part is controlled the interval change operation of above-mentioned the 1st interval change portion or above-mentioned the 2nd interval change portion and the voltage of above-mentioned voltage application portion and is applied operation.
When constituting plasma processing apparatus as stated, be easy to begin plasma discharge.
The 2nd invention is like the described plasma processing apparatus of above-mentioned the 1st invention, it is characterized in that,
Have change portion at interval of above-mentioned the 1st interval change portion and the above-mentioned the 2nd,
Above-mentioned the 2nd interval change portion is independent of the above-mentioned the 1st and carries out interval change operation at interval change portion.
When constituting plasma processing apparatus as stated, can be easy to begin plasma discharge, and then, the power consumption in the Cement Composite Treated by Plasma can be suppressed.
The 3rd invention is like the described plasma processing apparatus of above-mentioned the 2nd invention, it is characterized in that,
Upload at above-mentioned the 2nd electrode and to put object being treated,
Above-mentioned control part is controlled as follows: when the beginning plasma generates between above-mentioned the 1st electrode and above-mentioned the 3rd electrode; Make interval between above-mentioned the 1st electrode and above-mentioned the 3rd electrode less than the interval between above-mentioned the 1st electrode and above-mentioned the 2nd electrode; After above-mentioned plasma generates beginning, make interval between above-mentioned the 1st electrode and above-mentioned the 3rd electrode greater than the interval between above-mentioned the 1st electrode and above-mentioned the 2nd electrode.
When constituting plasma processing apparatus as stated, can be easy to begin plasma discharge, and then, the power consumption in the Cement Composite Treated by Plasma can be suppressed.
The 4th invention is like the described plasma processing apparatus of above-mentioned the 2nd invention, it is characterized in that,
Upload at above-mentioned the 2nd electrode and to put object being treated,
Above-mentioned control part is controlled as follows: when the beginning plasma generates between above-mentioned the 1st electrode and above-mentioned the 3rd electrode; Make interval between above-mentioned the 1st electrode and above-mentioned the 3rd electrode less than the interval between above-mentioned the 1st electrode and above-mentioned the 2nd electrode; After above-mentioned plasma generates beginning; Make the interval between above-mentioned the 1st electrode and above-mentioned the 2nd electrode, and the interval between above-mentioned the 1st electrode and above-mentioned the 3rd electrode is roughly the same.
When constituting plasma processing apparatus as stated, can be easy to begin plasma discharge.
The 5th invention is like the described plasma processing apparatus of above-mentioned the 2nd invention, it is characterized in that,
Above-mentioned control part is controlled as follows: make above-mentioned the 3rd electrode near above-mentioned the 1st electrode; Under the state of the interval between above-mentioned the 1st electrode and above-mentioned the 3rd electrode less than the interval between above-mentioned the 1st electrode and above-mentioned the 2nd electrode; Between above-mentioned the 1st electrode and above-mentioned the 2nd electrode, and above-mentioned the 1st electrode and above-mentioned the 3rd electrode between apply voltage; Between above-mentioned the 1st electrode and above-mentioned the 3rd electrode, generate plasma; Under the state that generates this plasma, make above-mentioned the 2nd electrode near above-mentioned the 1st electrode, between above-mentioned the 1st electrode and above-mentioned the 2nd electrode, generate plasma.
When constituting plasma processing apparatus as stated, after generating plasma between the 1st electrode and the 3rd electrode, utilize this plasma, can easily between the 1st electrode and the 2nd electrode, generate plasma.
The 6th invention is like the described plasma processing apparatus of above-mentioned the 5th invention, it is characterized in that,
Above-mentioned control part is controlled as follows: after generating plasma between above-mentioned the 1st electrode and above-mentioned the 2nd electrode; Make above-mentioned the 3rd electrode away from above-mentioned the 1st electrode, make interval between above-mentioned the 1st electrode and above-mentioned the 3rd electrode greater than the interval between above-mentioned the 1st electrode and above-mentioned the 2nd electrode.
When constituting plasma processing apparatus as stated; After generating plasma between the 1st electrode and the 3rd electrode, utilize this plasma, can easily between the 1st electrode and the 2nd electrode, generate plasma; And then; The plasma that between the 1st electrode and the 3rd electrode, generates can be cut down, therefore, the power consumption in the Cement Composite Treated by Plasma can be suppressed.
The 7th invention is like the described plasma processing apparatus of above-mentioned the 1st invention to the 6th invention, it is characterized in that,
Above-mentioned voltage application portion has above-mentioned the 1st electrode, the 2nd electrode and the 3rd electrode, and the 1st palace is connected with AC power, the 2nd electrode and the 3rd electrode grounding.
When constituting plasma processing apparatus as stated, owing to the electrode that is connected with AC power tails off, so apparatus structure is oversimplified.
The 8th invention is like the described plasma processing apparatus of above-mentioned the 1st invention to the 7th invention, it is characterized in that,
Above-mentioned the 2nd electrode and face above-mentioned the 1st electrode contraposition are conductor, and above-mentioned the 3rd electrode and face above-mentioned the 1st electrode contraposition are dielectric.
When constituting plasma processing apparatus as stated, object being treated is under the situation of insulator, can carry out Cement Composite Treated by Plasma effectively.
The 9th invention is like the described plasma processing apparatus of above-mentioned the 1st invention to the 8th invention, it is characterized in that,
The surface area of above-mentioned the 3rd electrode and face above-mentioned the 1st electrode contraposition is less than surface area above-mentioned the 2nd electrode and face above-mentioned the 1st electrode contraposition.
When constituting plasma processing apparatus as stated, can be easy to begin plasma discharge.
The 10th invention is like the described plasma processing apparatus of above-mentioned the 1st invention to the 9th invention, it is characterized in that,
Have the 1st gas limiting wall, said the 1st gas limiting wall surrounds the processing space by above-mentioned the 1st electrode and above-mentioned the 2nd electrode clamping, and restriction gas flows out to outside this processing space.
When constituting plasma processing apparatus as stated, can supply to the plasma zone effectively with handling gas.
The 11st invention is like the described plasma processing apparatus of above-mentioned the 1st invention to the 10th invention, it is characterized in that,
Have the 2nd gas limiting wall, said the 2nd gas limiting wall is between above-mentioned the 1st electrode and above-mentioned the 3rd electrode, and restriction gas flows out to above-mentioned the 3rd electrode side.
When constituting plasma processing apparatus as stated, can supply to the plasma zone effectively with handling gas.
The 12nd invention is like the described plasma processing apparatus of above-mentioned the 11st invention, it is characterized in that,
Have mobile device, said mobile device moves above-mentioned the 2nd gas limiting wall.
When constituting plasma processing apparatus as stated, can be easy to processing gas is limited in the plasma zone.
The 13rd invention is like the described plasma processing apparatus of above-mentioned the 1st invention to the 12nd invention, it is characterized in that,
Be contained in the rotary body of the rotating shaft that constitutes by insulator, have horizontal direction in above-mentioned the 3rd electrode,
Above-mentioned control part makes above-mentioned rotary body rotation through controlling above-mentioned the 2nd interval change portion, changes the interval between above-mentioned the 1st electrode and above-mentioned the 3rd electrode.
When constituting plasma processing apparatus as stated, can realize following 2 kinds of functions: reduce the function that electric field applies electric field between electrode 1 and the grounding electrode 3, stops unwanted discharge with 1 mobile device; And limit processing gas flows to the overseas function of plasma slab.
The 14th invention is like the described plasma processing apparatus of above-mentioned the 1st invention to the 13rd invention, it is characterized in that,
Above-mentioned the 3rd electrode and part above-mentioned the 1st electrode contraposition are convex shape.
When constituting plasma processing apparatus as stated, be easy to begin plasma discharge.
The 15th invention is like the described plasma processing apparatus of above-mentioned the 14th invention, it is characterized in that,
Above-mentioned the 3rd electrode and face above-mentioned the 1st electrode contraposition are dielectric.
When constituting plasma processing apparatus as stated, be easy to stably carry out plasma discharge.
The 16th invention is a method of plasma processing; Be the 1st electrode and and its opposed the 2nd electrode between, and above-mentioned the 1st electrode and and its opposed the 3rd electrode between import gas; Between above-mentioned the 1st electrode and above-mentioned the 2nd electrode, and above-mentioned the 1st electrode and above-mentioned the 3rd electrode between apply voltage; Produce plasma, handle object being treated
It is characterized in that said method of plasma processing carries out following operation:
The 1st plasma generation operation; Under the state of the interval between above-mentioned the 1st electrode and above-mentioned the 3rd electrode less than the interval between above-mentioned the 1st electrode and above-mentioned the 2nd electrode; Applying voltage between above-mentioned the 1st electrode and above-mentioned the 2nd electrode and between above-mentioned the 1st electrode and above-mentioned the 3rd electrode, between above-mentioned the 1st electrode and above-mentioned the 3rd electrode, produce plasma;
Electrode gap changes operation, after above-mentioned the 1st plasma generation operation, makes interval between above-mentioned the 1st electrode and above-mentioned the 3rd electrode greater than the interval between above-mentioned the 1st electrode and above-mentioned the 2nd electrode;
The 2nd plasma generation operation after above-mentioned electrode gap changes operation, produces plasma between above-mentioned the 1st electrode and above-mentioned the 2nd electrode.
When constituting method of plasma processing as stated, be easy to begin plasma discharge.
The 17th invention is a method of plasma processing; Be the 1st electrode and and its opposed the 2nd electrode between, and above-mentioned the 1st electrode and and its opposed the 3rd electrode between import gas; Between above-mentioned the 1st electrode and above-mentioned the 2nd electrode, and above-mentioned the 1st electrode and above-mentioned the 3rd electrode between apply voltage; Produce plasma, handle object being treated
It is characterized in that said method of plasma processing carries out following operation:
The 1st plasma generation operation; Under the state of the interval between above-mentioned the 1st electrode and above-mentioned the 3rd electrode less than the interval between above-mentioned the 1st electrode and above-mentioned the 2nd electrode; Applying voltage between above-mentioned the 1st electrode and above-mentioned the 2nd electrode and between above-mentioned the 1st electrode and above-mentioned the 3rd electrode, between above-mentioned the 1st electrode and above-mentioned the 3rd electrode, produce plasma; With
The 2nd plasma generation operation after above-mentioned the 1st plasma generation operation, is dwindled the interval between above-mentioned the 1st electrode and above-mentioned the 2nd electrode, between above-mentioned the 1st electrode and above-mentioned the 2nd electrode, produces plasma.
When constituting method of plasma processing as stated, be easy to begin plasma discharge.
The 18th invention is like the described method of plasma processing of above-mentioned the 17th invention, it is characterized in that, carries out following electrode gap and changes operation:
After above-mentioned the 2nd plasma generation operation, make interval between above-mentioned the 1st electrode and above-mentioned the 3rd electrode greater than the interval between above-mentioned the 1st electrode and above-mentioned the 2nd electrode.
Have the method for plasma processing that constitutes as stated, can suppress the power consumption in the Cement Composite Treated by Plasma.

Claims (16)

1. plasma processing apparatus is characterized in that having:
The 1st electrode;
And said the 1st electrode between generate the 2nd electrode of plasma;
And said the 1st electrode between generate the 3rd electrode of plasma;
Gas importing portion, the space between said the 1st electrode and said the 2nd electrode, and said the 1st electrode and said the 3rd electrode between the space in import gas; With
Voltage application portion, between said the 1st electrode and said the 2nd electrode, and said the 1st electrode and said the 3rd electrode between apply voltage,
In said plasma processing apparatus, also have:
The 1st interval change portion or the 2nd is change portion at interval, and said the 1st interval change portion changes the interval between said the 1st electrode and said the 2nd electrode, and said the 2nd interval change portion changes the interval between said the 1st electrode and said the 3rd electrode; With
Control part is controlled the interval change operation of said the 1st interval change portion or said the 2nd interval change portion and the voltage of said voltage application portion and is applied operation.
2. plasma processing apparatus as claimed in claim 1 is characterized in that,
Have change portion at interval of said the 1st interval change portion and the said the 2nd,
Said the 2nd interval change portion is independent of the said the 1st and carries out interval change operation at interval change portion.
3. plasma processing apparatus as claimed in claim 2 is characterized in that,
Upload at said the 2nd electrode and to put object being treated,
Said control part is controlled as follows: when the beginning plasma generates between said the 1st electrode and said the 3rd electrode; Make interval between said the 1st electrode and said the 3rd electrode less than the interval between said the 1st electrode and said the 2nd electrode; After said plasma generates beginning, make interval between said the 1st electrode and said the 3rd electrode greater than the interval between said the 1st electrode and said the 2nd electrode.
4. plasma processing apparatus as claimed in claim 2 is characterized in that,
Upload at said the 2nd electrode and to put object being treated,
Said control part is controlled as follows: when the beginning plasma generates between said the 1st electrode and said the 3rd electrode; Make interval between said the 1st electrode and said the 3rd electrode less than the interval between said the 1st electrode and said the 2nd electrode; After said plasma generates beginning, make interval and the interval between said the 1st electrode and said the 3rd electrode between said the 1st electrode and said the 2nd electrode roughly the same.
5. plasma processing apparatus as claimed in claim 2 is characterized in that,
Said control part is controlled as follows: make said the 3rd electrode near said the 1st electrode; Under the state of the interval between said the 1st electrode and said the 3rd electrode less than the interval between said the 1st electrode and said the 2nd electrode; Between said the 1st electrode and said the 2nd electrode, and said the 1st electrode and said the 3rd electrode between apply voltage; Between said the 1st electrode and said the 3rd electrode, generate plasma; Under the state that has generated said plasma, make said the 2nd electrode near said the 1st electrode, between said the 1st electrode and said the 2nd electrode, generate plasma.
6. plasma processing apparatus as claimed in claim 5 is characterized in that,
Said control part is controlled as follows: after generating plasma between said the 1st electrode and said the 2nd electrode; Make said the 3rd electrode away from said the 1st electrode, make interval between said the 1st electrode and said the 3rd electrode greater than the interval between said the 1st electrode and said the 2nd electrode.
7. plasma processing apparatus as claimed in claim 1 is characterized in that,
Said voltage application portion has said the 1st electrode, the 2nd electrode and the 3rd electrode, and wherein the 1st electrode is connected with AC power, the 2nd electrode and the 3rd electrode grounding.
8. plasma processing apparatus as claimed in claim 1 is characterized in that,
Said the 2nd electrode and face said the 1st electrode contraposition are conductor, and said the 3rd electrode and face said the 1st electrode contraposition are dielectric.
9. plasma processing apparatus as claimed in claim 1 is characterized in that,
The surface area of said the 3rd electrode and face said the 1st electrode contraposition is less than surface area said the 2nd electrode and face said the 1st electrode contraposition.
10. plasma processing apparatus as claimed in claim 1 is characterized in that,
Have the 1st gas limiting wall, said the 1st gas limiting wall surrounds the processing space by said the 1st electrode and said the 2nd electrode clamping, and restriction gas flows out to outside the said processing space.
11. plasma processing apparatus as claimed in claim 1 is characterized in that,
Between said the 1st electrode and said the 3rd electrode, have the 2nd gas limiting wall, said the 2nd gas limiting wall restriction gas flows out to said the 3rd electrode side.
12. plasma processing apparatus as claimed in claim 11 is characterized in that,
Have mobile device, said mobile device moves said the 2nd gas limiting wall.
13. plasma processing apparatus as claimed in claim 1 is characterized in that,
Be contained in the rotary body of the rotating shaft that constitutes by insulator, have horizontal direction in said the 3rd electrode,
Said control part makes said rotary body rotation through controlling said the 2nd interval change portion, changes the interval between said the 1st electrode and said the 3rd electrode thus.
14. plasma processing apparatus as claimed in claim 1 is characterized in that,
Said the 3rd electrode and part said the 1st electrode contraposition are convex shape.
15. plasma processing apparatus as claimed in claim 14 is characterized in that,
Said the 3rd electrode and face said the 1st electrode contraposition are dielectric.
16. method of plasma processing; Be the 1st electrode and and its opposed the 2nd electrode between, and said the 1st electrode and and its opposed the 3rd electrode between import gas; Between said the 1st electrode and said the 2nd electrode, and said the 1st electrode and said the 3rd electrode between apply voltage; Produce plasma, handle object being treated
It is characterized in that, carry out following operation:
The 1st plasma generation operation; Under the state of the interval between said the 1st electrode and said the 3rd electrode less than the interval between said the 1st electrode and said the 2nd electrode; Applying voltage between said the 1st electrode and said the 2nd electrode and between said the 1st electrode and said the 3rd electrode, between said the 1st electrode and said the 3rd electrode, produce plasma;
Electrode gap changes operation, after said the 1st plasma generation operation, makes interval between said the 1st electrode and said the 3rd electrode greater than the interval between said the 1st electrode and said the 2nd electrode; With
The 2nd plasma generation operation after said electrode gap changes operation, produces plasma between said the 1st electrode and said the 2nd electrode.
CN2011101892619A 2010-07-02 2011-06-30 Plasma processing apparatus and method of plasma processing Pending CN102315072A (en)

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