CN102303268A - Ultra smooth non-destructive nano grinding method for soft and fragile film - Google Patents
Ultra smooth non-destructive nano grinding method for soft and fragile film Download PDFInfo
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- CN102303268A CN102303268A CN201110281924A CN201110281924A CN102303268A CN 102303268 A CN102303268 A CN 102303268A CN 201110281924 A CN201110281924 A CN 201110281924A CN 201110281924 A CN201110281924 A CN 201110281924A CN 102303268 A CN102303268 A CN 102303268A
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Abstract
The invention discloses an ultra smooth non-destructive nano grinding method for a soft and fragile film, belongs to the technical field of ultra precise machining of soft and fragile crystals and films, and in particular relates to a nano grinding method for a soft and fragile semiconductor crystal and a film. The method is characterized in that: superfine diamond powder of No.10,000 to No.300,000 is used as and abrasive, and ceramic is used as a bonding agent in the nano grinding method. The grinding liquid is deionized water, the removal rate of a material is 1 to 20mum/min, the revolving speed of a man shaft is 1,600 to 2,400r/min, and the revolving speed of a workpiece is 50 to 200r/min. The nano hardness value of the proper soft and fragile crystal and the film is 0.1 to 2GPa, and the soft and fragile crystal and the film with thickness of over 500 nanometers can be machined. The method has the advantage of realizing the ultra smooth non-destructive nano grinding effect of the soft and fragile crystal and the film.
Description
Technical field
The invention belongs to soft crisp crystal and film Ultraprecision Machining field, the nanometer grinding processing method of particularly soft crisp semiconductor crystal and film.
Background technology
Fast development along with Infrared Focal plane Array Technologies; The requirement of the soft crisp crystal of the third generation that the semiconductor industry bound pair is emerging and flatness, surface quality and the integrality of film is more and more higher; Superfine grinding has special advantages owing to having at aspects such as flatness, material removing rate, low costs; Therefore in the ultraprecise processing of emerging soft crisp semiconductor crystal of the third generation and film, obtain increasing attention, and the nanometer grinding technique more and more becomes the development trend and the direction of superfine grinding.But, the present report that rarely has the soft thin and brittle film semiconductor ultraprecise processing of third generation aspect in the world; And for the processing of soft crisp semiconductor crystal, also main what adopt is the processing method of traditional free abrasive grinding-polishing-chemical attack.The free abrasive that this processing method adopts embeds the finished surface of soft crisp crystal easily, in case embed, will be difficult to remove; Even remove, also can stay manufacturing deficiencies such as pit, microplasticity distortion and little cut at finished surface.Though chemical attack can be removed the damage layer that finished surface stays, and can stay the corrosion ditch, thereby reduce the military service performance of soft crisp semiconductor optoelectronic element.On the other hand, this traditional grinding-polishing processing method causes the soft crisp semiconductor crystal surface failure of rock of the third generation, cut easily, collapses manufacturing deficiencies such as limit.The deficiency that has aspects such as success rate is low, percent defective is high, long processing time, cost height when processing soft crisp crystal and film in this way.And along with the soft crisp crystal of the third generation and film in the fast development aspect military affairs, national defence, Aeronautics and Astronautics, astrophysics, the high sophisticated technology; Present traditional processing method can not satisfy emerging soft crisp semiconductor crystal of the third generation and film for the harsh quality of finished surface and the requirement of integrality aspect, reach the undamaged requirement of nano level ultra-smooth like the processed workpiece surface.
Summary of the invention
The purpose of this invention is to provide a kind of soft thin and brittle film ultra-smooth not damaged nanometer grinding processing method; Adopt pottery as bond; The ultra-fine diamond powder is as abrasive material; Deionized water is as grinding fluid; Realize the purpose of soft crisp crystal and the grinding of film ultra-smooth not damaged nanometer; Solve and adopt the free abrasive that traditional free abrasive grinding-polishing-the chemical attack processing method causes easily to embed, collapse manufacturing deficiencies such as limit, fragmentation, little cut at present, thereby obtain soft crisp crystal and the undamaged nanoprocessing effect of film ultra-smooth.
Technical scheme of the present invention is to adopt the ultra-fine diamond powder of #10000-#300000 as abrasive material, adopts a kind of nanometer method for grinding of pottery as bond.Grinding fluid is a deionized water, and the clearance of material is 1-20 μ m/min, and the speed of mainshaft is 1600-2400r/min, and workpiece rotational frequency is 50-200r/min.The soft crisp crystal that is fit to and the nano hardness value of film are 0.1-2GPa, and can process thickness is above soft crisp crystal and film of 500nm.Realized the processing effect of the ultra-smooth not damaged nanometer grinding of soft crisp crystal and film.
The nano hardness value of workpiece is 0.1-2GPa.Nano hardness is at soft crisp crystal of the emerging semiconductor of the third generation of this scope and film; Has lower stacking fault energy; Under the inducing of the tangential force of nanometer grinding of the present invention; The realization nanometer layer is moved easily; Nanometer layer realizes nano-crystallization then; Realize that soft crisp crystal and film change software strategy into software-hardware strategy under nanoscale, thereby realize the evenly processing effect of the nanometer grinding of removal.
The thickness of workpiece is more than the 500nm.When the thickness of soft crisp crystal and film workpiece reaches 500nm when above, the removal amount of hundreds of nanometers can be arranged.For the clearance of the nanometer grinding of minimum 1 μ m/min, be easier to obtain the undamaged processing effect of ultra-smooth like this.
Grinding fluid is a deionized water.Because soft crisp crystal of the third generation and film are II-VI family chemicals mostly, this compound is poisonous when high-temperature gasification.And nanometer grinding meeting causes that temperature rises, and therefore lowers the temperature with deionized water, prevents gasification.On the other hand, this aspect need not any chemical liquids, and only is to use deionized water, environmental protection more, and processing cost reduces greatly.
Speed of grinding wheel spindle is 1600-2400r/min during the nanometer grinding, and the clearance of material is 1-20 μ m/min, and workpiece rotational frequency is 50-200r/min.For the air spindle ultraprecise grinding machine that the nanometer grinding is adopted, the present invention adopts the face grinding method.Employing is made grinding tool based on the cup-shaped ceramic bond diamond emery wheel of workpiece spinning process principle.The big plane of general air spindle high planarization ultraprecise grinding machine is 1600-2400r/min in the speed of mainshaft, and workpiece rotational frequency is 50-200r/min, when material removing rate is 1-20 μ m/min, obtains the processing effect of the undamaged nanometer grinding of ultra-smooth more easily.
The abrasive material of nanometer abrasive grinding wheel is a diamond, and granularity is #10000-#300000.The ultra-fine diamond powder abrasive material of this particle size range can obtain several nanometers even undamaged inferior nano surface grinding effect.Granularity is low is not easy to obtain the effect of nanometer grinding, and granularity is too high, and bond is participated in grinding easily, and processing effect can descend on the contrary.
The bond of nanometer abrasive grinding wheel is a vitrified bond, contains three kinds or four kinds in carborundum, silica, cerium oxide, aluminium oxide, titanium oxide, zirconia, lanthana, the neodymia, and granularity and diamond abrasive granularity are complementary.A kind of fining agent and dispersant in sodium chloride, potassium chloride, potassium chloride, the magnesium chloride as vitrified bond.Because the prior resin bond for the ultra-fine diamond abrasive material, can not provide enough holds, be cost only to sacrifice porosity, higher hold is provided.But like this, cause workpiece burn easily and lose processing effect.Therefore, the pottery that employing of the present invention and diamond powder are complementary is as bond, thereby higher hold is provided, and obtains good nanometer ground effect.Above-mentioned selected pottery is the ceramic powder that industrial quarters is generally used, and obtains high-quality and ceramic powder cheaply more easily.On the other hand, when these ceramic materials provide enough hold in the nanometer grinding, very high porosity can also be arranged, thereby in time take away heat and the abrasive dust that produces in the nanometer grinding, obtain good nanometer ground effect.Vitrified bond has higher pyroconductivity with respect to resinoid bond, can take away the heat that produces in the nanometer grinding quickly, thereby obtains the undamaged nanometer grinding of ultra-smooth effect.Sodium chloride, potassium chloride, potassium chloride, magnesium chloride help suppressing growing up of ceramic crystalline grain in the sintering process, obtain the uniform vitrified bond microstructure of refinement, thereby guarantee that bond can provide efficiently hold and porosity uniformly.Because the cubical contraction of different potteries in sintering process is different, therefore selects the different pottery of 3-4 kind to help obtaining higher uniform porosity.
Effect of the present invention and benefit are to adopt ultra-fine diamond grinding wheel of vitrified bond to make the nanometer grinding tool, and material removing rate is 1-20 μ m/min.The processing method of this nanometer grinding can the induced nano hardness number be that the soft crisp semiconductor crystal of the third generation and the film of 0.1-2GPa realizes that under the tangential force effect nanometer layer moves; Realize nano-crystallization then; Material changes software strategy into software-hardware strategy under nanoscale, thereby realizes the method that nanoscale is evenly removed.Grinding fluid adopts deionized water during the nanometer grinding, and environmental friendliness cuts down finished cost simultaneously.On the other hand, the vitrified bond that is adopted has also obtained high porosity except the high hold for the ultra-fine diamond powder can be provided, and can take away the heat and the abrasive dust that produce in the nanometer grinding better.Simultaneously, the pyroconductivity of this vitrified bond is higher with respect to the prior resin bond, more easily the heat that produces in the grinding is taken away, thereby is reduced the temperature of workpiece, has realized the processing effect of the ultra-smooth not damaged nanometer grinding of soft crisp crystal and film.
The specific embodiment
Be described in detail the specific embodiment of the present invention below in conjunction with technical scheme.
Adopt #12000 ultra-fine diamond powder, corresponding diamond diameter is 900nm, as the ultra-fine diamond abrasive material.Carborundum, aluminium oxide, the silica of #12000 are mixed according to 40: 30: 30 ratio of weight ratio; Add weight ratio then and be 1% sodium chloride as fining agent and dispersant, the internal diameter that adopts the method for normal temperature machinery cold-press moulding to be pressed into 56 long 18mm, wide 3mm, high 5mm is that 342mm, external diameter are the arc fritter of 345mm.With these arc fritters; At room temperature evenly be warmed up to the 480-500 degree with 5 degree per minutes; Be incubated 30-50 minute; Evenly be warmed up to the 600-620 degree with 3-5 degree per minute then; Evenly be warmed up to the 660-680 degree with 1-3 degree per minute at last; Be incubated 100-150 minute, naturally cool to room temperature, get final product thermal sintering.
The little tooth of arc of these thermal sinterings is fixed and be distributed in the groove at stainless steel edge of 350mm with high strength glue, and this stainless steel insert produces VG401 MKII ultraprecise grinding machine according to Japanese Okamoto and manufactures and designs.After the process experiment of dynamic balancing is qualified, can be installed on the VG401 MKII ultraprecise grinding machine.
Workpiece adopts Hg
0.22Cd
0.78The soft thin and brittle film of Te (111), substrate is Cd
0.96Zn
0.04Te (111).The diameter of this film is 15mm, and thickness is 20 μ m, and the thickness of substrate is 0.5mm.This film-substrate is pasted on 5 cun commercial silicon chip surfaces with paraffin, adopts vacuum cup to be adsorbed in automatically on the ceramic vacuum sucker.
Grinding fluid during the nanometer grinding is a deionized water.The speed of mainshaft is 2000r/min, and rotating speed of table is 120r/min, and material removing rate is 8 μ m/min.Be 2min process time, and tarry matter 30s lifts the nanometer abrasive grinding wheel then, and the nanometer grinding finishes.
5 cun silicon chips are unloaded from vacuum cup,, take off the film-substrate after the processing, film is rinsed well, dry up with compressed air then, be put under the ZYGO white light noncontact surface topographic apparatus fo and carry out roughness concentration with deionized water again with paraffin dissolving.The surface roughness Ra of the film that obtains is 1.7nm, and the PV value is 13.1nm, and processing effect has reached nano level super-smooth surface requirement.
The film that will have substrate adopts improved Tripod technology to be prepared into the high-resolution-ration transmission electric-lens sample; In Gatan 691 type precision ion polishing systems, carry out the experiment of ion milling; The ion bombardment energy of ion milling is 2.5keV; The inclination angle of ion gun is 4 degree; The attenuate time is 20-40min, till interference fringe appears in the thin district that speckles with organic gel that will observe.
The high-resolution-ration transmission electric-lens experiment is carried out under FEI Tecnai F20 transmission electron microscope, so that obtain sub-surface damage layer atomic lattice dot matrix.The voltage of operation is 200kV.Show and combination SEAD collection of illustrative plates that through the high-resolution-ration transmission electric-lens displaing micro picture SEAD collection of illustrative plates demonstrates perfect single crystal lattice diffraction spot, the high-resolution-ration transmission electric-lens photo also demonstrates perfect atomic lattice dot matrix.Therefore, obtained the undamaged nanometer grinding of ultra-smooth surface.
Claims (1)
1. soft thin and brittle film ultra-smooth not damaged nanometer grinding processing method; Adopt pottery as bond, the ultra-fine diamond powder is as abrasive material, and deionized water is as grinding fluid; Realize the purpose of soft crisp crystal and the grinding of film ultra-smooth not damaged nanometer, it is characterized in that:
(1) the nano hardness value of workpiece is 0.1-2GPa;
(2) thickness of workpiece is more than the 500nm;
(3) grinding fluid is a deionized water;
(4) speed of grinding wheel spindle is 1600-2400r/min during the nanometer grinding, and the clearance of material is 1-20 μ m/min, and workpiece rotational frequency is 50-200r/min;
(5) abrasive material of nanometer abrasive grinding wheel is a diamond, and granularity is #10000-#300000;
(6) bond of nanometer abrasive grinding wheel is a vitrified bond, contains three kinds or four kinds in carborundum, silica, cerium oxide, aluminium oxide, titanium oxide, zirconia, lanthana, the neodymia, and granularity and diamond abrasive granularity are complementary; A kind of fining agent and dispersant in sodium chloride, potassium chloride, potassium chloride, the magnesium chloride as vitrified bond.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102658529A (en) * | 2012-05-09 | 2012-09-12 | 大连理工大学 | Method for preparing nano particles by nano grinding through superfine abrasive particles |
| CN104589224A (en) * | 2015-01-26 | 2015-05-06 | 湖南大学 | Soft-brittle material processing abrasive tool as well as manufacturing method thereof and method for processing soft-brittle material |
| CN105817976A (en) * | 2016-03-23 | 2016-08-03 | 大连理工大学 | Efficient ultraprecise grinding method for nanometer depth damaged layer |
| CN114032068A (en) * | 2021-11-16 | 2022-02-11 | 河南联合精密材料股份有限公司 | Diamond composite abrasive for grinding and polishing and preparation method thereof |
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| US4600469A (en) * | 1984-12-21 | 1986-07-15 | Honeywell Inc. | Method for polishing detector material |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102658529A (en) * | 2012-05-09 | 2012-09-12 | 大连理工大学 | Method for preparing nano particles by nano grinding through superfine abrasive particles |
| CN104589224A (en) * | 2015-01-26 | 2015-05-06 | 湖南大学 | Soft-brittle material processing abrasive tool as well as manufacturing method thereof and method for processing soft-brittle material |
| CN105817976A (en) * | 2016-03-23 | 2016-08-03 | 大连理工大学 | Efficient ultraprecise grinding method for nanometer depth damaged layer |
| CN114032068A (en) * | 2021-11-16 | 2022-02-11 | 河南联合精密材料股份有限公司 | Diamond composite abrasive for grinding and polishing and preparation method thereof |
| CN114032068B (en) * | 2021-11-16 | 2022-12-16 | 河南联合精密材料股份有限公司 | Diamond composite abrasive for grinding and polishing and preparation method thereof |
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Application publication date: 20120104 |