CN102298275B - 一种显影方法 - Google Patents
一种显影方法 Download PDFInfo
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- CN102298275B CN102298275B CN2010102180570A CN201010218057A CN102298275B CN 102298275 B CN102298275 B CN 102298275B CN 2010102180570 A CN2010102180570 A CN 2010102180570A CN 201010218057 A CN201010218057 A CN 201010218057A CN 102298275 B CN102298275 B CN 102298275B
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 238000005507 spraying Methods 0.000 claims abstract description 3
- 238000011161 development Methods 0.000 claims description 35
- 239000007788 liquid Substances 0.000 claims description 34
- 239000013078 crystal Substances 0.000 claims description 23
- 239000007921 spray Substances 0.000 claims description 23
- 238000005516 engineering process Methods 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 230000003068 static effect Effects 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 13
- 238000004140 cleaning Methods 0.000 abstract description 10
- 238000005530 etching Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012822 chemical development Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
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Claims (26)
Priority Applications (1)
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CN2010102180570A CN102298275B (zh) | 2010-06-23 | 2010-06-23 | 一种显影方法 |
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CN2010102180570A CN102298275B (zh) | 2010-06-23 | 2010-06-23 | 一种显影方法 |
Publications (2)
Publication Number | Publication Date |
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CN102298275A CN102298275A (zh) | 2011-12-28 |
CN102298275B true CN102298275B (zh) | 2012-10-31 |
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CN2010102180570A Active CN102298275B (zh) | 2010-06-23 | 2010-06-23 | 一种显影方法 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104570626A (zh) * | 2013-10-28 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 一种改善光掩膜关键尺寸均匀性和针孔缺陷率的方法 |
CN105312184B (zh) * | 2015-12-07 | 2018-05-11 | 中国科学院宁波材料技术与工程研究所 | 一种对工件进行打磨-喷涂的自动生产方法 |
CN107479341A (zh) * | 2017-09-13 | 2017-12-15 | 武汉新芯集成电路制造有限公司 | 一种减少刻蚀阻挡层残留的显影方法 |
CN112327584B (zh) * | 2020-10-29 | 2025-03-18 | 中国科学院微电子研究所 | 光刻显影的方法 |
CN112965347B (zh) * | 2020-11-12 | 2023-11-03 | 重庆康佳光电科技有限公司 | 晶圆显影装置、方法和晶圆 |
CN112650032A (zh) * | 2020-12-25 | 2021-04-13 | 上海华力微电子有限公司 | 一种改善光刻显影t型缺陷的方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995015516A1 (fr) * | 1993-12-02 | 1995-06-08 | Nippon Steel Corporation | Appareil de revelation par liquide d'images latentes electrostatiques |
JP2770338B2 (ja) * | 1988-08-30 | 1998-07-02 | ソニー株式会社 | 現像方法 |
CN101387835A (zh) * | 2007-09-13 | 2009-03-18 | 株式会社迅动 | 基板处理装置及基板处理方法 |
CN101393401A (zh) * | 2007-09-17 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | 光刻工艺的显影方法 |
CN101391254A (zh) * | 2007-09-17 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | 晶片清洗方法 |
CN101609269A (zh) * | 2008-06-17 | 2009-12-23 | 东京毅力科创株式会社 | 显影处理方法和显影处理装置 |
-
2010
- 2010-06-23 CN CN2010102180570A patent/CN102298275B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2770338B2 (ja) * | 1988-08-30 | 1998-07-02 | ソニー株式会社 | 現像方法 |
WO1995015516A1 (fr) * | 1993-12-02 | 1995-06-08 | Nippon Steel Corporation | Appareil de revelation par liquide d'images latentes electrostatiques |
CN101387835A (zh) * | 2007-09-13 | 2009-03-18 | 株式会社迅动 | 基板处理装置及基板处理方法 |
CN101393401A (zh) * | 2007-09-17 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | 光刻工艺的显影方法 |
CN101391254A (zh) * | 2007-09-17 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | 晶片清洗方法 |
CN101609269A (zh) * | 2008-06-17 | 2009-12-23 | 东京毅力科创株式会社 | 显影处理方法和显影处理装置 |
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CN102298275A (zh) | 2011-12-28 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20130107 |
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Effective date of registration: 20130107 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |