CN102290340A - Method and device for changing trigger voltage of electrostatic protection device - Google Patents

Method and device for changing trigger voltage of electrostatic protection device Download PDF

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Publication number
CN102290340A
CN102290340A CN2011102046190A CN201110204619A CN102290340A CN 102290340 A CN102290340 A CN 102290340A CN 2011102046190 A CN2011102046190 A CN 2011102046190A CN 201110204619 A CN201110204619 A CN 201110204619A CN 102290340 A CN102290340 A CN 102290340A
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CN
China
Prior art keywords
drain electrode
electrostatic protection
trigger voltage
doping
dopant type
Prior art date
Application number
CN2011102046190A
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Chinese (zh)
Inventor
姜一波
杜寰
曾传滨
王立新
Original Assignee
中国科学院微电子研究所
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Publication date
Application filed by 中国科学院微电子研究所 filed Critical 中国科学院微电子研究所
Priority to CN2011102046190A priority Critical patent/CN102290340A/en
Publication of CN102290340A publication Critical patent/CN102290340A/en

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Abstract

The invention discloses a method for changing the trigger voltage of an electrostatic protection device, comprising the following step of doping and injecting in a drain electrode of the electrostatic protection device, wherein the type of the impurity injected by the drain electrode is same or contrary with the type of the impurity of the drain electrode. The invention also discloses a device for changing the trigger voltage of the electrostatic protection device. According to the method and the device for changing the trigger voltage of the electrostatic protection device, trigger voltage can be effectively reduced, and the electrostatic protection device can be suitable for the electrostatic protection of small-size low-voltage circuits. Meanwhile, the capacitance of the electrostatic protection device is reduced while the trigger voltage is increased, and the electrostatic protection capability of the electrostatic protection device is hardly affected.

Description

A kind of method and device that changes the electrostatic protection device trigger voltage

Technical field

The present invention relates to electronic device electrostatic protection field, be specifically related to a kind of method and device that changes the electrostatic protection device trigger voltage.

Background technology

Static all exists at nature constantly, when the electrostatic charge of the external environment condition of chip or chip internal accumulation, the pin by chip flows into or when flowing out chip internal, electric current (peak value can reach several amperes) or voltage that moment produces, will damage integrated circuit, chip functions was lost efficacy.Electrostatic defending for electronics manufacturer still be for the consumer cost all very high.When people's physical efficiency felt that static exists, the static of its generation had reached tens thousand of volts, was enough to damage the electronic devices and components of the overwhelming majority.So designing qualified electrostatic protection is the justice that should have of all industrialization electronic devices.

Summary of the invention

The objective of the invention is to, the static that solves existence now provides a kind of method and device that changes the electrostatic protection device trigger voltage to the problem that electronic devices and components damage.

From an aspect a kind of method that changes the electrostatic protection device trigger voltage provided by the invention, the drain electrode that the is included in electrostatic protection device injection of mixing; The dopant type that described drain electrode doping is injected is identical or opposite with the drain electrode dopant type.

Further, mix the dopant type injected when identical with the dopant type that drains when described drain electrode, the doping scope covers whole drain electrode doping injection region.

Further, mix the dopant type injected when opposite with the dopant type that drains when described drain electrode, the doping scope does not need to cover whole drain electrode doping injection region.

Further, the impurity of described drain electrode doping injection is positioned at the below or the side of drain electrode.

From another aspect, the invention provides a kind of device that changes the electrostatic protection device trigger voltage, comprising: the drain electrode of described electrostatic protection device is provided with drain electrode doping injection region;

The dopant type that described drain electrode doping injection region is injected is identical or opposite with the drain electrode dopant type.

Further, when the dopant type of injecting when described drain electrode doping injection region was identical with the dopant type that drains, the doping scope covered whole drain electrode doping injection region.

Further, when the dopant type of injecting when described drain electrode doping injection region was opposite with the dopant type that drains, the doping scope did not need to cover whole drain electrode doping injection region.

Further, described drain electrode doping injection region is positioned at the below or the side of drain electrode.

A kind of method and device that changes the electrostatic protection device trigger voltage provided by the invention by the PN junction both sides concentration of change drain electrode doping injection region, thereby changed its puncture voltage, also changed the moment that its parasitic BJT opens.Can effectively reduce trigger voltage, make electrostatic protection device can be applicable to the electrostatic defending of small size low voltage circuit.Also can when increase trigger voltage, reduce the electric capacity of electrostatic protection device, and not influence the antistatic capacity of electrostatic protection device substantially.

Description of drawings

A kind of structural representation that changes the device of electrostatic protection device trigger voltage that Fig. 1 provides for the embodiment of the invention;

A kind of schematic top plan view that changes the device of electrostatic protection device trigger voltage that Fig. 2 provides for the embodiment of the invention.

Embodiment

NMOS/PMOS pipe in NMOS/PMOS or cascaded NMOS/PMOS(series connection)

During as electrostatic protection device, according to single side abrupt junction puncture voltage formula , silicon dielectric capacitance rate , maximum field , the unit electron charge All can be approximately constant, Concentration for the low-doped side of single side abrupt junction.As seen, the NMOS/PMOS pipe of NMOS/PMOS or cascaded NMOS/PMOS(series connection) variation of the PN junction both sides concentration of drain electrode doping injection region has changed its puncture voltage and has changed, and has also changed the moment that its parasitic BJT opens.So reduce or improved the NMOS/PMOS pipe of NMOS/PMOS or cascaded NMOS/PMOS(series connection) trigger voltage during as electrostatic protection device.

The method of change electrostatic protection device trigger voltage provided by the invention, by below drain electrode or the side mix dopant type and drain electrode impurity identical or opposite impurity, change the PN junction both sides concentration that drains.The scope that the drain electrode doping is injected does not need to cover whole drain electrode doping injection region when dopant type is opposite with drain electrode impurity.Optionally inject and the opposite impurity of drain electrode impurity, can well be when reducing the device trigger voltage, bigger increase does not appear in control capacitance.The scope that the drain electrode doping is injected is when dopant type is identical with drain electrode impurity, and the doping scope covers whole drain electrode doping injection region, and when suitably improving the device trigger voltage, device capacitor reduces and the electrostatic defending performance does not have obviously to reduce.

A kind of device that changes the electrostatic protection device trigger voltage provided by the invention; be provided with drain electrode doping injection region by below draining at electrostatic protection device or side; and at drain electrode doping injection region injection and the identical or opposite impurity of drain electrode dopant type, thereby change drain electrode PN junction both sides concentration.When the dopant type that drain electrode doping injection region is injected is opposite with drain electrode impurity, do not need to cover whole drain electrode doping injection region.Optionally inject and the opposite impurity of drain electrode impurity, can well be when reducing the device trigger voltage, bigger increase does not appear in control capacitance.When the dopant type that drain electrode doping injection region is injected was identical with drain electrode impurity, the doping scope covered whole drain electrode doping injection region, and when suitably improving the device trigger voltage, device capacitor reduces and the electrostatic defending performance does not obviously reduce.

In order to make purpose of the present invention, it is more clear that technical scheme and advantage are described, and the grounded-grid NMOS with electrostatic protection device cascaded ggNMOS(series connection manages below) be that example is illustrated a kind of change electrostatic protection device of the present invention trigger voltage method.

As shown in Figure 1 and Figure 2, an electrostatic protection structure grounded-grid NMOS of electrostatic protection device cascaded ggNMOS(series connection pipe) by P type substrate 14, be positioned at N+ heavy doping injection 11 and the metal connection 15 that P type extension 13 on the P type substrate 14, polysilicon gate 12, autoregistration by polysilicon gate 12 form and form.Grounded-grid NMOS in electrostatic protection device cascaded ggNMOS(series connection manages) drain and carry out p type impurity injection formation drain electrode doping injection 10, the puncture voltage of the PN junctions of N+ heavy doping injection 11 and drain electrode doping injection 10 formation is less than the puncture voltage of N+ heavy doping injection 11 with the PN junction of P type extension 13 formation.Thus, tangible reduction has appearred to the trigger voltage grounded-grid NMOS pipe of connecting as electrostatic protection device cascaded ggNMOS() in injection 10 because drain electrode is mixed.

Fig. 2 is the grounded-grid NMOS pipe of electrostatic protection device cascaded ggNMOS(shown in Figure 1 series connection) the complete vertical view of electrostatic protection structure.P type drain electrode doping is injected 10 and is illustrated in figure 2 as zonal injection.Optionally the drain electrode that forms at some local of drain electrode is mixed and is injected 10, is reducing trigger voltage that parasitic BJT opens simultaneously, and the increase of control capacitance does not influence the antistatic capacity of electrostatic protection device.

A kind of method and device that changes the electrostatic protection device trigger voltage provided by the invention; by below drain electrode or the side mix the dopant type and the identical or opposite impurity of impurity that drains; the PN junction both sides concentration of drain electrode doping injection region is changed; thereby changed its puncture voltage, also changed the moment that its parasitic BJT opens.Can effectively reduce trigger voltage, make electrostatic protection device can be applicable to the electrostatic defending of small size low voltage circuit.Also can when increase trigger voltage, reduce the electric capacity of electrostatic protection device, and not influence the antistatic capacity of electrostatic protection device substantially.

The foregoing description is a preferred implementation of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under spirit of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.

Claims (8)

1. a method that changes the electrostatic protection device trigger voltage is characterized in that, comprising:
In the drain electrode of the electrostatic protection device injection of mixing;
The dopant type that described drain electrode doping is injected is identical or opposite with the drain electrode dopant type.
2. a kind of method that changes the electrostatic protection device trigger voltage as claimed in claim 1 is characterized in that, also comprises:
Mix the dopant type injected when identical with the dopant type that drains when described drain electrode, and the doping scope covers whole drain electrode doping injection region.
3. a kind of method that changes the electrostatic protection device trigger voltage as claimed in claim 1 is characterized in that, also comprises:
Mix the dopant type injected when opposite with the dopant type that drains when described drain electrode, and the doping scope does not need to cover whole drain electrode doping injection region.
4. as each described a kind of method that changes the electrostatic protection device trigger voltage of claim 1-3, it is characterized in that:
The impurity that described drain electrode doping is injected is positioned at the below or the side of drain electrode.
5. device that changes the electrostatic protection device trigger voltage is characterized in that:
The drain electrode of described electrostatic protection device is provided with drain electrode doping injection region;
The dopant type that described drain electrode doping injection region is injected is identical or opposite with the drain electrode dopant type.
6. a kind of device that changes the electrostatic protection device trigger voltage as claimed in claim 5 is characterized in that:
When the dopant type of injecting when described drain electrode doping injection region was identical with the dopant type that drains, the doping scope covered whole drain electrode doping injection region.
7. a kind of device that changes the electrostatic protection device trigger voltage as claimed in claim 5 is characterized in that:
When the dopant type of injecting when described drain electrode doping injection region was opposite with the dopant type that drains, the doping scope did not need to cover whole drain electrode doping injection region.
8. as each described a kind of device that changes the electrostatic protection device trigger voltage of claim 5-7, it is characterized in that:
Described drain electrode doping injection region is positioned at the below or the side of drain electrode.
CN2011102046190A 2011-07-21 2011-07-21 Method and device for changing trigger voltage of electrostatic protection device CN102290340A (en)

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CN2011102046190A CN102290340A (en) 2011-07-21 2011-07-21 Method and device for changing trigger voltage of electrostatic protection device

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102646601A (en) * 2012-04-19 2012-08-22 中国科学院微电子研究所 Semiconductor structure and manufacturing method thereof
CN103367362A (en) * 2012-04-09 2013-10-23 上海华虹Nec电子有限公司 One-way conductive pressure device and manufacturing method thereof
CN105097795A (en) * 2014-05-04 2015-11-25 无锡华润上华半导体有限公司 Semiconductor device possessing electrostatic discharge (ESD) protection structure

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US20030067040A1 (en) * 2001-10-08 2003-04-10 Winbond Electronics Corp. ESD protection devices and methods to reduce trigger voltage
CN1630079A (en) * 2003-12-15 2005-06-22 三星电子株式会社 Electrostatic discharge protection device and manufacturing method thereof
US20050275027A1 (en) * 2003-09-09 2005-12-15 Micrel, Incorporated ESD protection for integrated circuits
CN101017822A (en) * 2006-02-08 2007-08-15 精工电子有限公司 Semiconductor device
CN101630683A (en) * 2008-07-15 2010-01-20 中芯国际集成电路制造(上海)有限公司 Integrated electrostatic discharge device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030067040A1 (en) * 2001-10-08 2003-04-10 Winbond Electronics Corp. ESD protection devices and methods to reduce trigger voltage
US20050275027A1 (en) * 2003-09-09 2005-12-15 Micrel, Incorporated ESD protection for integrated circuits
CN1630079A (en) * 2003-12-15 2005-06-22 三星电子株式会社 Electrostatic discharge protection device and manufacturing method thereof
CN101017822A (en) * 2006-02-08 2007-08-15 精工电子有限公司 Semiconductor device
CN101630683A (en) * 2008-07-15 2010-01-20 中芯国际集成电路制造(上海)有限公司 Integrated electrostatic discharge device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103367362A (en) * 2012-04-09 2013-10-23 上海华虹Nec电子有限公司 One-way conductive pressure device and manufacturing method thereof
CN103367362B (en) * 2012-04-09 2016-06-08 上海华虹宏力半导体制造有限公司 A kind of one-way conductive pressure device and manufacture method thereof
CN102646601A (en) * 2012-04-19 2012-08-22 中国科学院微电子研究所 Semiconductor structure and manufacturing method thereof
CN102646601B (en) * 2012-04-19 2016-09-28 北京燕东微电子有限公司 A kind of semiconductor structure and manufacture method thereof
CN105097795A (en) * 2014-05-04 2015-11-25 无锡华润上华半导体有限公司 Semiconductor device possessing electrostatic discharge (ESD) protection structure
CN105097795B (en) * 2014-05-04 2018-03-16 无锡华润上华科技有限公司 Has the semiconductor devices of esd protection structure
US9953970B2 (en) 2014-05-04 2018-04-24 Csmc Technologies Fab1 Co., Ltd. Semiconductor device having ESD protection structure

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Application publication date: 20111221