CN102270967A - On-chip harmonic absorption circuit for power amplifier - Google Patents
On-chip harmonic absorption circuit for power amplifier Download PDFInfo
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- CN102270967A CN102270967A CN2010101910330A CN201010191033A CN102270967A CN 102270967 A CN102270967 A CN 102270967A CN 2010101910330 A CN2010101910330 A CN 2010101910330A CN 201010191033 A CN201010191033 A CN 201010191033A CN 102270967 A CN102270967 A CN 102270967A
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- power amplifier
- absorption circuit
- circuit
- mmic
- harmonic wave
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Abstract
The invention discloses an on-chip harmonic absorption circuit for a power amplifier, which belongs to the technical field of communication and is applied to a radio frequency power amplifier circuit. The absorption circuit is separated from a monolithic microwave integrated circuit (MMIC) and designed based on an MMIC process, and consists of a bonding PAD, a metal-insulator-metal (MIM) capacitor, a grounding through hole and a bonded gold wire which are provided by a process library and connected in series, wherein the gold wire and the MMIC are taped out and bonded; and the two ends of the gold wire are bonded to an MMIC output PAD and an absorption circuit PAD respectively. The absorption circuit is connected in parallel with the output end of the MMIC by the gold wire. A resonance point is generated by the series-wound components in the absorption circuit to absorb harmonic components generated when the MMIC works. The on-chip harmonic absorption circuit for the power amplifier effectively absorbs harmonics generated in a working band by flexibly controlling the length of the gold wire to improve the linearity of the amplifier circuit.
Description
Technical field
The present invention relates to communication technical field, particularly relate to harmonic wave absorption circuit in a kind of radio-frequency power amplifier sheet.
Background technology
Along with the develop rapidly of wireless communication technology, wireless transceiver progressively improves at the performance requirement of aspects such as power consumption, efficient, volume.Power amplifier is as the afterbody in the transmitter, and the power of its consumption accounts for the ratio more than 60% in whole transceiver, have a strong impact on systematic function.In addition, when the signal of power amplifier is increased to a certain degree, power amplifier produces a series of harmonic waves because of being operated in the inelastic region, and in order to make power output big as far as possible, the power amplifier operating state that adopts causes the harmonic component of its output very big near the saturation region at present, if most of harmonic wave turns back to power amplifier, the power amplifier operating state will be changed, reliability decrease, suppressing harmonic wave becomes the important measures that improve linearity of radio-frequency power amplifier.
Usually, the afterbody of radio-frequency power amplifier adopts the AB power-like amplifier, because of its power efficiency can satisfy the requirement of these systems again than the category-A power amplifier height and the linearity, thereby has obtained extensive use.Yet because the influence of nonlinear distortion, the harmonic distortion of AB power-like amplifier becomes more serious.
Summary of the invention
Under large-signal, produce the problem of harmonic distortion at radio-frequency power amplifier in the prior art, the invention provides harmonic wave absorbing structure in a kind of power amplifier sheet, can improve the harmonic distortion of power amplifier significantly, improve the linearity of circuit.
Harmonic wave absorption circuit in a kind of power amplifier sheet of the present invention comprises: Chuan Lian pressure welding spun gold, pressure welding PAD, MIM electric capacity and grounding through hole successively.
Harmonic wave absorption circuit in the power amplifier sheet of the present invention, the adjustable in length of described pressure welding spun gold.
Harmonic wave absorption circuit in the power amplifier sheet of the present invention, described spun gold one end is connected with pressure welding PAD in the described interior absorption circuit, and the other end is connected with the output PAD of power amplifier.
The beneficial effect of technical scheme provided by the invention is: the present invention realizes the harmonic wave that produces in the working band is absorbed effectively by the flexible control to spun gold length.Adopt harmonic wave absorption circuit of the present invention, the flexible change of the inductance value that brings by the spun gold length variations produces required resonance point, the effective harmonic components that produces in the absorption band, the linearity of raising amplifier circuit.
Description of drawings
Fig. 1 is the circuit diagram of the interior harmonic wave absorption circuit of power amplifier sheet of the embodiment of the invention;
Fig. 2 is the equivalent circuit diagram of the interior harmonic wave absorption circuit of power amplifier sheet of the embodiment of the invention;
The curve chart that Fig. 3 changes with input power for the power amplifier harmonic power that does not adopt of the present invention interior harmonic wave absorption circuit;
Fig. 4 is that the frequency response curve of harmonic wave absorption circuit also is the resonance point distribution map in the power amplifier sheet of the present invention;
Fig. 5 adopts the change curve of the power amplifier harmonic output power of harmonic wave absorption circuit in the power amplifier sheet of the present invention with input power;
Fig. 6 is the curve chart of the series resonance point of harmonic wave absorption circuit structure in the power amplifier sheet of the present invention with pressure welding spun gold length variations.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, embodiment of the present invention is described further in detail below in conjunction with accompanying drawing.
Harmonic wave absorption circuit 101 in the sheet of a kind of radio-frequency power amplifier provided by the invention, comprise two parts, the one, pressure welding PAD104, MIM electric capacity 105 and grounding through hole 106 in the sheet, these several Xiang Junke select from existing device technology storehouse, the 2nd, the pressure welding spun gold of finishing after the chip flow 103, because gold utensil has good non-oxidizability, therefore become the gauge wire material of pressure welding bonding.The output PAD102 that spun gold 103 two ends are bonded to power amplifier 107 respectively go up and the pressure welding PAD104 of absorption circuit on, harmonic wave absorption circuit 101 in the sheet that final formation is in series by spun gold 103, pressure welding PAD104, MIM electric capacity 105 and grounding through hole 106.Connect by spun gold 103, make harmonic wave absorption circuit 101 and power amplifier 107 in the sheet, and then be connected with the outer output matching circuit 108 of sheet.Produce the series resonance point by the element in the harmonic wave absorption circuit 101 in the sheet, the harmonic components that produces when coming absorbed power amplifier MMIC work.Because power amplifier MMIC circuit is worked in certain frequency band range, though series resonance can effectively absorb the harmonic wave of its resonance point correspondence, and can reduce near the harmonic components of this frequency, but series resonance can only produce a resonance point, have some parasitic factors in the actual test environment, especially the output of circuit coupling realizes on pcb board, so skew takes place each resonance point easily and cause harmonic wave to change.In order to realize the effective absorption to harmonic wave, the resonance point that series resonance absorbs network should be designed to adjustable when reality is tested.Adopt the method for the invention, the flexible change of the inductance value that brings by the length variations of spun gold 103 produces required resonance point, the effective harmonic components that produces in the absorption band, the linearity of raising amplifier circuit.
Utilize the radio-frequency power amplifier of institute of the present invention harmonic wave absorption circuit to be mainly used in the front end transmitter in the wireless communication system, will amplify, send antenna to and launch through the signal after the frequency conversion.
In embodiments of the present invention, harmonic wave absorption circuit 101 utilizes the form composition that grounding through hole 106, MIM electric capacity 105, pressure welding PAD104 and pressure welding spun gold 103 in the sheet are connected successively.This branch road is parallel on the PAD102 of radio-frequency power amplifier 107 outputs, by the resonance point that produces in the series arm, the harmonic components that comes the absorbed power amplifier to produce.Simultaneously,, thereby improved the flexibility ratio that harmonic wave absorbs, effectively suppressed the harmonic components that produces in the working band because the spun gold adjustable in length can change resonance point flexibly.
Describe the present invention below with reference to the accompanying drawings and in conjunction with the embodiments in detail.
As shown in Figure 1, the harmonic wave absorption circuit is 101 parts shown in the figure in the sheet of the radio-frequency power amplifier of the embodiment of the invention, the interior MIM electric capacity 105 of absorption circuit PAD104, sheet and the grounding through hole 106 that have comprised series connection, and the pressure welding spun gold 103 of connecting with absorption circuit PAD104.The two ends of pressure welding spun gold are bonded to respectively on MMIC output PAD102 and the absorption circuit PAD104.
The equivalent circuit diagram of harmonic wave absorption circuit can be with reference to Fig. 2 in this sheet, also be, absorption circuit pressure welding PAD104 equivalence for the C1 among Fig. 2 (owing to signal the pairing microstrip line inductance value of double layer of metal up and down of process very little, to simplify the analysis, ignore microstrip line herein), its capacitance can directly be provided by the technology library model; Grounding through hole 106 is by the part shown in 201 among Fig. 2, also promptly the series connection of an equivalent inductance L2 and desirable ground connection comes equivalent substitute, and its inductance value is also directly provided by corresponding model in the technology library; In addition, about pressure welding spun gold 103, to simplify the analysis, can come equivalent substitute by an inductance element here, also be the L1 among Fig. 2, and during side circuit emulation, the complex model that can select to be suitable for carries out simulation analysis by software.Thus, the series resonance point of harmonic wave absorption circuit then can be drawn by this equivalence circuit in the sheet.Specifically, the impedance Z of this equivalence circuit can be expressed as formula (1):
Wherein:
w＝2πf (2)
According to the principle of series resonance, when impedance Z was minimum, corresponding frequency f was series resonance frequency.
Fig. 3 be the present invention selected compare do not adopt harmonic wave loop in this sheet the time radio-frequency power amplifier that designs secondary, triple-frequency harmonics power output with the change curve of input power.As can be seen, the triple-frequency harmonics of this circuit is relatively poor, has been issued to-2dBm in-5.6dBm input power, has surpassed the second harmonic power output, therefore, harmonic wave absorption circuit in the sheet can be designed to mainly absorb triple-frequency harmonics.
Fig. 4 be in this sheet the harmonic wave loop under certain spun gold length, the S21 curve that utilizes simulation software to obtain, wherein, the frequency range between f1 and the f2 is the working band of radio-frequency power amplifier, 3f1 and 3f2 then are the triple-frequency harmonics frequency band ranges of working band correspondence.As can be seen, the harmonic wave absorption circuit is under certain spun gold length in the sheet of design, and its series resonance point drops in the triple-frequency harmonics frequency band range of working band.And during actual test, also can be according to actual needs, series resonance point is designed near working band frequency.
Fig. 5 adopts in the sheet that the present invention proposes behind the harmonic wave absorption circuit, and the secondary of radio-frequency power amplifier, triple-frequency harmonics power output are with the change curve of input power.By Fig. 3 and Fig. 5 more as can be seen, adopt this harmonic wave absorption circuit after, under same input power, the triple-frequency harmonics that produces in the circuit can be reduced 20dB, to second harmonic the certain absorption effect be arranged also simultaneously.
Fig. 6 is the pressure welding spun gold that adopts 3 kinds of different lengths, the series resonance frequency of harmonic wave absorption circuit in the sheet that obtains, wherein spun gold length is spaced apart 25 μ m, as can be seen, the variation of spun gold length, can change series resonance frequency easily, and variable is limited on the spun gold length, adjust the size of harmonic wave in the circuit neatly.
In sum, by the above embodiment of the present invention, harmonic wave absorption circuit in the sheet of the radio-frequency power amplifier that provides can reduce secondary, triple-frequency harmonics power output significantly, improves the harmonic distortion of circuit.The effect that can reach comprises at least: the mode that adopts pressure welding PAD in the sheet, electric capacity and ground hole series connection, model data in the calling technological storehouse easily, be used for emulation comparatively exactly, the part of manual operation only is the pressure welding spun gold, and variable is controlled at very little scope; The adjustable length of spun gold, the variation of the inductance composition of corresponding spun gold can change series resonance frequency neatly, the convenient adjusting because the parasitic factor of circuit causes the variation of the harmonic wave that the skew of resonance point causes; The harmonic wave absorption circuit is parallel to the output of radio-frequency power amplifier in the sheet of series connection form by the pressure welding spun gold, by the harmonic frequency that produces harmonic components is absorbed, greatly reduce secondary, the triple-frequency harmonics power output of circuit, improved the linearity of circuit.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. the interior harmonic wave absorption circuit of power amplifier sheet is characterized in that, comprising:
Chuan Lian spun gold, pressure welding PAD, MIM electric capacity and grounding through hole successively.
2. harmonic wave absorption circuit in the power amplifier sheet according to claim 1 is characterized in that the adjustable in length of described spun gold.
3. harmonic wave absorption circuit in the power amplifier sheet according to claim 1 is characterized in that, described spun gold one end is connected with pressure welding PAD in the described interior absorption circuit, and the other end is connected with the output PAD of power amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101910330A CN102270967A (en) | 2010-06-03 | 2010-06-03 | On-chip harmonic absorption circuit for power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101910330A CN102270967A (en) | 2010-06-03 | 2010-06-03 | On-chip harmonic absorption circuit for power amplifier |
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| Publication Number | Publication Date |
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| CN102270967A true CN102270967A (en) | 2011-12-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN2010101910330A Pending CN102270967A (en) | 2010-06-03 | 2010-06-03 | On-chip harmonic absorption circuit for power amplifier |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868858A (en) * | 2015-05-15 | 2015-08-26 | 四川龙瑞微电子有限公司 | Microwave power amplification device with adjustable attenuation amplitude |
| CN104868860A (en) * | 2015-05-15 | 2015-08-26 | 四川龙瑞微电子有限公司 | Microwave power amplifier capable of inhibiting harmonic waves |
| CN104868863A (en) * | 2015-05-15 | 2015-08-26 | 四川龙瑞微电子有限公司 | Adjustable microwave power amplifying device |
| CN104868857A (en) * | 2015-05-15 | 2015-08-26 | 四川龙瑞微电子有限公司 | Microwave power amplifying device |
| CN107370460A (en) * | 2017-07-12 | 2017-11-21 | 深圳国民飞骧科技有限公司 | A kind of circuit structure and method for improving radio-frequency power amplifier harmonic inhibition capability |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5051706A (en) * | 1988-11-09 | 1991-09-24 | Kabushiki Kaisha Toshiba | High frequency power amplifier circuit |
| CN201336573Y (en) * | 2009-01-16 | 2009-10-28 | 山东雷奇电器有限公司 | Harmonic wave suppression device for traction network |
-
2010
- 2010-06-03 CN CN2010101910330A patent/CN102270967A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5051706A (en) * | 1988-11-09 | 1991-09-24 | Kabushiki Kaisha Toshiba | High frequency power amplifier circuit |
| CN201336573Y (en) * | 2009-01-16 | 2009-10-28 | 山东雷奇电器有限公司 | Harmonic wave suppression device for traction network |
Non-Patent Citations (1)
| Title |
|---|
| 张胜利等: "光探测器芯片的高频特性测量", 《中国激光》, vol. 31, no. 7, 31 July 2004 (2004-07-31) * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868858A (en) * | 2015-05-15 | 2015-08-26 | 四川龙瑞微电子有限公司 | Microwave power amplification device with adjustable attenuation amplitude |
| CN104868860A (en) * | 2015-05-15 | 2015-08-26 | 四川龙瑞微电子有限公司 | Microwave power amplifier capable of inhibiting harmonic waves |
| CN104868863A (en) * | 2015-05-15 | 2015-08-26 | 四川龙瑞微电子有限公司 | Adjustable microwave power amplifying device |
| CN104868857A (en) * | 2015-05-15 | 2015-08-26 | 四川龙瑞微电子有限公司 | Microwave power amplifying device |
| CN104868857B (en) * | 2015-05-15 | 2017-12-29 | 四川龙瑞微电子有限公司 | Microwave power amplifying device |
| CN107370460A (en) * | 2017-07-12 | 2017-11-21 | 深圳国民飞骧科技有限公司 | A kind of circuit structure and method for improving radio-frequency power amplifier harmonic inhibition capability |
| CN107370460B (en) * | 2017-07-12 | 2021-07-27 | 深圳飞骧科技有限公司 | Circuit structure and method for improving harmonic suppression capability of radio frequency power amplifier |
| US11139783B2 (en) | 2017-07-12 | 2021-10-05 | Lansus Technologies Inc | Circuit structure and method for improving harmonic suppression capability of radio frequency power amplifier |
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Application publication date: 20111207 |