CN102270632A - 高压发光二极管及其制造方法 - Google Patents

高压发光二极管及其制造方法 Download PDF

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CN102270632A
CN102270632A CN2011102021598A CN201110202159A CN102270632A CN 102270632 A CN102270632 A CN 102270632A CN 2011102021598 A CN2011102021598 A CN 2011102021598A CN 201110202159 A CN201110202159 A CN 201110202159A CN 102270632 A CN102270632 A CN 102270632A
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high pressure
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chip
ceramic substrate
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CN102270632B (zh
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吉爱华
汪英杰
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Shandong core Optoelectronics Technology Co., Ltd.
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INNER MONGOLIA HUAYAN XINGUANG TECHNOLOGY Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires

Abstract

高压发光二极管及其制造方法,包括陶瓷基板、蓝光芯片、绿光芯片和红光芯片,其特征在于:高压发光二极管结构,是在正方形陶瓷基板上,中间加工一个正方形凹形槽和一个桥式电阻槽,首先在桥式电阻槽中先焊上桥式电阻,然后用自动固晶机将4个电压为47V至55V的高压蓝光芯片、4个电压为47V至55V高压绿光芯片、6个电压为32V至37V的高压红光芯片,用高导热绝缘胶粘贴在正方形凹形槽里,固化后,用自动焊线机将所述的4个蓝光芯片、4个绿光芯片和6个红光芯片上焊上金线,即将4个高压蓝光芯片串联、4个高压绿光芯片串联、6个高压红光芯片串联,然后再并联在一起,两端分别连在电极上,将6301硅胶均匀搅拌后,涂在正方形凹形槽里,胶量稍微鼓包溢出,然后迅速送入烘箱固化,就得到散热效果好、制作成本低、适合大批量生产的高压发光二极管。

Description

高压发光二极管及其制造方法
技术领域
本发明涉及一种发光二极管。
背景技术
发光二极管的用途越来越广,从原来的指示灯,正在向家用照明发展,其节能环保效果显著。
由于现有的二极管,采用低压芯片,工作电压3V左右,1W二极管电流350毫安,电流大了,散热问题难以解决,为使热迅速散出,往往是加大铝基板的尺寸和面积,这又增加了其成本,成本高的,现在普通老百姓买不起,影响其推广。
二极管散热问题,是一个当今世界难题,如何减少二极管工作时热量,提高光效,如何降低成本,成为当今大家最为关心的问题。
发明内容
本发明的目的是提供一种为散热效果好、制作成本低、适合大批量生产的高压发光二极管。
本发明的目的是这样实现的:
高压发光二极管,包括陶瓷基板、蓝光芯片、绿光芯片和红光芯片,其特征在于:高压发光二极管结构,是在正方形陶瓷基板上,中间加工一个正方形凹形槽和一个桥式电阻槽,首先在桥式电阻槽中先焊上桥式电阻,然后用自动固晶机将4个电压为47V至55V的高压蓝光芯片、4个电压为47V至55V高压绿光芯片、6个电压为32V至37V的高压红光芯片,用高导热绝缘胶粘贴在正方形凹形槽里,固化后,用自动焊线机将所述的4个蓝光芯片、4个绿光芯片和6个红光芯片上焊上金线,即将4个高压蓝光芯片串联、4个高压绿光芯片串联、6个高压红光芯片串联,然后再并联在一起后,两端分别连在电极上,将6301硅胶均匀搅拌后,涂在正方形凹形槽里,胶量稍微鼓包溢出,然后迅速送入烘箱固化,就得到本发明高压发光二极管。
另外,所述陶瓷基板是边长为16mm的正方形,其厚度为1mm至2mm。
另外,所述正方形凹形槽的边长是8mm,深度为0.3mm至0.9mm。
另外,所述高压蓝光芯片的电压为47V至55V,波长为470hm至475nm。
另外,所述高压绿光芯片的电压为47V至55V,波长为520nm至525nm。
另外,优选的结构是,所述高压红光芯片的电压为32V至37V,波长为610nm至615nm。
发明效果
本发明高压发光二极管与低压二极管相比有二大明显竞争优势:第一,在同样输出功率下,高压发光二极管所需的驱动电流大大低于低压二极管。如以台湾晶元光电生产的高压蓝光1W二极管为例,它的正向压降高达50V,也即它只需20mA驱动电流就可以输出1W功率,而普通正向压降为3V的1W二极管,需要350mA驱动电流才能输出1W功率,因此同样输出功率的高压发光二极管在工作时耗散的功率要远低于低压二极管,这意味着散热铝外壳的成本可大大降低。
第二,本发明高压发光二极管可以大幅降低AC至DC转换效率损失。本发明以12W输出功率为例,将正向压降为50V的1W蓝光高压发光二极管,4个串联,正向压降为50V的1W绿光高压发光二极管,4个串联,正向压降为35V的1W红光高压发光二极管,6个串联,然后并联在一起,连接在桥式电阻的两端,就可以工作了。但假如采用正向压降为3V的1W低压二极管,即便12个串在一起正向压降也不过36V,也就是说需要从220V AC市电降压到36VDC。我们知道,输入和输出压差越低,AC到DC的转换效率就越高,可见本发明高压发光二极管,变压器的效率就可以得到大大提高,从而可大幅降低AC至DC转换时的功率损失,这一热耗减少又可进一步降低散热外壳的成本。
因此,如采用高压发光二极管来开发二极管通用照明产品,总体功耗可以大大降低,从而大幅降低对散热外壳的设计要求,如可以用更薄更轻的铝外壳即可满足二极管灯具的散热需求,由于散热铝外壳的成本是二极管照明灯具的主要成本组成部分之一,铝外壳成本有效降低也意味着整体二极管照明灯具成本的有效降低。
由此可见,高压发光二极管可以带来二极管照明灯具成本和重量的有效降低,但其更重要的意义是大幅降低了对散热系统的设计要求,从而有力扫清了二极管照明灯具进入室内照明市场的最大技术障碍。因此,高压发光二极管将主导未来的二极管通用照明灯具市场。
附图说明
图1是表示本发明的电路原理图。
图2是表示本发明的陶瓷基板加工示意图。
图3是表示本发明的陶瓷基板上焊接桥式电阻示意图。
图4是表示本发明的固晶示意图。
图5是表示本发明的焊线示意图。
图6是表示本发明的封装成品示意图。
其中:1是陶瓷基板,2是内凹槽,3是外电极,4是桥式电阻,5是桥式电阻槽,6是高压芯片,7是蓝光芯片,8蓝光芯片正极,9蓝光芯片负极,10是绿光芯片,11是绿光芯片正极,12是绿光芯片负极,13是红光芯片,14是红光芯片正极,15是红光芯片负极,16是金线,17是6301硅胶。
具体实施方式
实施例:
下面,结合附图对本发明做详细说明。
先加工陶瓷基板:
图1是表示本发明的原理图,依据原理图1,陶瓷基板1为正方形,边长为16mm,按常规工艺在陶瓷基板1上加工边长为8mm的内凹槽2,在陶瓷基板1上留出桥式电阻槽5的位置,按原理图1的要求,在陶瓷基板1上做上外电极3及其引线,然后将桥式电阻4焊接在桥式电阻槽5中,桥式电阻4的焊接工作在万级厂房里完成。
高电压芯片的固晶:
用自动固晶机将4个1W的高压蓝光芯片7,用高导热绝缘胶将蓝光芯片7粘接在边长为8mm的内凹槽2里。
用自动固晶机将4个1W的高压绿光芯片10,用高导热绝缘胶将绿光芯片10粘接在边长为8mm的内凹槽2里。
用自动固晶机将1W的6个高压红光芯片13,用高导热绝缘胶将红光芯片13粘接在边长为8mm的内凹槽2里。
送入烘箱中,烘箱温度为145℃-155℃,固化,时间为55分至65分钟,至完全固化。
高电压芯片焊线:
将固晶的高电压1W芯片,用自动焊线机焊上金线16,金线16的规格为30微米,金线16的纯度为99.9999%。焊线方式为4个高压蓝光芯片7串联、4个高压绿光芯片10串联、6个高压红光芯片13串联,然后并联在一起后,两端分别连在外电极3上。
注胶:
将道康宁品牌的6301硅胶17的A组分和B组分,按1∶1的比例搅拌均匀后,用点胶机涂在正方形内凹槽2里,胶量稍微鼓包溢出,然后迅速送入烘箱固化,,烘箱的温度是155℃-165℃,固化时间55分钟至65分钟,就完成了高压发光二极管的制造方法。
另外,所述正方形陶瓷基板的边长是16mm,厚度为1mm至2mm。
另外,所述正方形凹形槽的边长8mm,深度为0.3mm至0.9mm。
另外,所述高压蓝光芯片的电压为47V至55V,波长为470nm至475nm。
另外,所述高压绿光芯片的电压为47V至55V,波长为520nm至525nm。
另外,所述高压红光芯片的电压为32V至37V,波长为610nm至615nm。
本发明所用的陶瓷基板也可以是长方形的。
本发明,采用高压发光二极管后,从根本上解决了二极管的散热问题,提高了光效,降低了成本,使用寿命也有了较大提高。同时该发明的生产工艺简单,适于大批量的生产。
本发明中所使用的蓝光芯片、绿光芯片和红光芯片产品是台湾晶圆光电生产的。

Claims (7)

1.高压发光二极管,包括陶瓷基板、蓝光芯片、绿光芯片和红光芯片,其特征在于:高压发光二极管结构,是在边长正方形陶瓷基板上,中间加工一个正方形凹形槽和一个桥式电阻槽,首先在桥式电阻槽中先焊上桥式电阻,然后用自动固晶机将4个电压为47V至55V的高压蓝光芯片、4个电压为47V至55V高压绿光芯片、6个电压为32V至37V的高压红光芯片,用高导热绝缘胶粘贴在正方形凹形槽里,固化后,用自动焊线机将所述的4个蓝光芯片、4个绿光芯片和6个红光芯片上焊上金线,即将4个高压蓝光芯片串联、4个高压绿光芯片串联、6个高压红光芯片串联,然后再并联在一起后,两端分别连在电极上,将6301硅胶均匀搅拌后,涂在正方形凹形槽里,胶量稍微鼓包溢出,然后迅速送入烘箱固化,烘箱的温度是155℃-165℃,固化时间55分钟至65分钟,就得到高压发光二极管。
2.根据权利要求1所述的高压发光二极管,其特征在于:所述正方形陶瓷基板的厚度为1mm至2mm。
3.根据权利要求1所述的高压发光二极管,其特征在于,所述正方形凹形槽的深度为.03mm至0.9mm。
4.根据权利要求1所述的高压发光二极管,其特征在于:所述高压蓝光芯片的电压为47V至55V,波长为470nm至475nm。
5.根据权利要求1所述的高压发光二极管,其特征在于:所述高压绿光芯片的电压为47V至55V,波长为520nm至525nm。
6.根据权利要求1所述的高压发光二极管,其特征在于:所述高压红光芯片的电压为32V至37V,波长为610nm至615nm。
7.一种如权利要求1所述的高压发光二极管的制造方法,其特征是:
a、加工陶瓷基板:
陶瓷基板为正方形,常规工艺加工内凹槽,留出桥式电阻槽的位置,在陶瓷基板上做上外电极及其引线线,然后将桥式电阻焊接在陶瓷基板的桥式电阻槽中,桥式电阻的焊接工作在万级厂房里完成;
b、高电压芯片的固晶:
用自动固晶机将4个的高压蓝光芯片,用高导热绝缘胶将蓝光芯片粘接在陶瓷基板的内凹槽里;
用自动固晶机将4个的高压绿光芯片,用高导热绝缘胶将蓝光芯片粘接在陶瓷基板的内凹槽里;
用自动固晶机将6个高压红光芯片,用高导热绝缘胶将红光芯片粘接在陶瓷基板的内凹槽里;
送入烘箱中,固化,烘箱温度为145℃至155℃,时间为55分至65分钟,使其完全固化;
c、高电压芯片焊线:
将步骤b中固晶的高电压芯片,用自动焊线机焊上金线,金线规格为30微米,纯度为99.9999%的,焊线方式为4个高压蓝光芯片串联、4个高压绿光芯片串联、6个高压红光芯片串联,然后并联在一起后,两端分别连在电极上;
d、注胶:
将道康宁6301硅胶A组分和B组分,按1∶1的比例倒出,搅拌均匀后,用点胶机涂在正方形凹形槽里,待胶量稍微鼓包溢出,迅速送入烘箱固化,烘箱的温度是155℃至165℃,固化时间1小时,即完成了本发明高压发光二极管的制造方法。
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CN102891140A (zh) * 2012-09-13 2013-01-23 惠州雷曼光电科技有限公司 Led晶片及功率型led
CN106328638A (zh) * 2016-10-31 2017-01-11 佛山市中昊光电科技有限公司 一种cob光源

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