CN102270591B - One-step die-bonding process of two semiconductor chips - Google Patents
One-step die-bonding process of two semiconductor chips Download PDFInfo
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- CN102270591B CN102270591B CN 201110213819 CN201110213819A CN102270591B CN 102270591 B CN102270591 B CN 102270591B CN 201110213819 CN201110213819 CN 201110213819 CN 201110213819 A CN201110213819 A CN 201110213819A CN 102270591 B CN102270591 B CN 102270591B
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Abstract
The invention discloses a one-step die-bonding process of two semiconductor chips. The process comprises the following steps of: (a) extruding the shape of the solder by using a solder by use of a die-bonding head which has a die-bonding surface with a size larger than that of an assembly of the two semiconductor chips in parallel arrangement, and then placing the first chip on the solder and pressing down to form the welded joint between the chip and a substrate; and (b) placing the second chip on the solder and pressing down to form the welded joint of the chip and the substrate. The solder which has a required shape and size for the two chips is formed by use of the single large die-bonding head, and the larger the press-bonding head, the more perfect the shape of the solder; and the action of welding the first chip and the action of welding the second chip are performed in sequence, so that the solder has a relatively perfect shape and a small slope, which facilitates follow-up operations. Besides, the device-changing time is saved.
Description
Technical field
The present invention relates to the semiconductor packaging field, particularly relate to one-step die-bonding process of two semiconductor chips.
Background technology
In semiconductor chip welding encapsulation technology field, at first with pressing die head scolding tin is pressed into uniform thickness and shape, then chip is attached on the scolding tin and welds again.Pressing die head is used for regulating evenness, thickness and the width of the scolding tin between chip and the substrate.
The stamping technique that the dual semiconductor chip sheet of at present welding arranged side by side being arranged welds employing is to adopt two different pressing die head to carry out.Extrude the tin shape that the first chip needs with the first pressing die head, then place the first chip on tin and press down and form the first chip and weld with substrate; Go to extrude the needed tin shape of the second chip with the second pressing die head, then place the second chip on tin and press down and form the second chip and weld with substrate.Owing to be two chips of welding, so extrude respectively two needed scolding tin shape sizes of chip with twice, then carry out at twice the action of welding chip.
Because pressing die head is less, moulded section is poorer, and the shape of the twice each pressing mold tin formation of pressing mold is very little, so the tin shape of two chip intersections is very imperfect, may cause tin to overflow beyond substrate.For example, when extruding the required scolding tin shape of the second chip, the second pressing die head can be pressed onto the border of the first pressing die head, cause easily herein twice formed scolding tin of pressing mold to link together and form backflow, thereby cause two chips middle higher, the lower chip in both sides tilts, thereby causes in next flow process the bonding equipment vision system correctly not to be familiar with, thus the problem that can not carry out the bonding wire operation.
Summary of the invention
The object of the invention is to avoid weak point of the prior art and a kind of one-step die-bonding process of two semiconductor chips is provided, its saving changes the machine time, and the shape of tin that pressing mold forms is more perfect.
Purpose of the present invention realizes by following technical measures.
One-step die-bonding process of two semiconductor chips, step comprises:
(a) with the die pressing surface size surpass dual chip side by side the pressing die head of size extrude the tin shape, then place the first chip on tin and press down and form chip and weld with substrate;
(b) place the second chip on tin and press down and form chip and weld with substrate.
Be provided with around the die pressing surface of described pressing die head and consist of rectangular four perimeter rows air drains.
The degree of depth of described die pressing surface is 0.04mm, and the degree of depth of described perimeter rows air drain is 0.16mm.
The diagonal of described perimeter rows air drain is provided with the cross bleed groove.
Described cross bleed groove is identical with the degree of depth and the width of described perimeter rows air drain.
The degree of depth of described cross bleed groove is less than the degree of depth of described perimeter rows air drain.
The present invention extrudes two needed scolding tin shape sizes of chip with single larger pressing die head, pressing die head is larger, the shape that extrudes tin is more perfect, then weld successively the action of the first chip and the second chip, can form the shape of more perfect tin, and gradient is less, is beneficial to subsequent job; Save the machine time that changes simultaneously.
Embodiment
The invention will be further described with the following Examples.
One-step die-bonding process of two semiconductor chips, step comprises:
(a) with the die pressing surface size surpass dual chip side by side the pressing die head of size extrude the tin shape, then place the first chip on tin and press down and form chip and weld with substrate;
(b) place the second chip on tin and press down and form chip and weld with substrate.
Owing to be two chips of welding, so extrude two needed scolding tin shape sizes of chip with single larger pressing die head, then divide the action of carrying out successively welding chip, but do not carry out the pressing mold action.Can form the shape of more perfect tin, and gradient is less, is beneficial to subsequent job.
And saving changes the machine time, and the shape of tin that pressing mold forms is more perfect, solves chip and tilts to be conducive to follow-up bonding wire operation.
Be provided with around the die pressing surface of described pressing die head and consist of rectangular four perimeter rows air drains.
The degree of depth of described die pressing surface is 0.04mm, and the degree of depth of described perimeter rows air drain is 0.16mm.
The diagonal of described perimeter rows air drain is provided with the cross bleed groove.
Described cross bleed groove is identical with the degree of depth and the width of described perimeter rows air drain.
The degree of depth of described cross bleed groove is less than the degree of depth of described perimeter rows air drain.
Should be noted that at last; above embodiment only is used for technical scheme of the present invention being described but not limiting the scope of the invention; although with reference to preferred embodiment the present invention has been done detailed description; those of ordinary skill in the art is to be understood that; can make amendment or be equal to replacement technical scheme of the present invention, and not break away from essence and the scope of technical solution of the present invention.
Claims (4)
1. one-step die-bonding process of two semiconductor chips, it is characterized in that: step comprises:
(a) with the die pressing surface size surpass dual chip side by side the pressing die head of size extrude the tin shape, then place the first chip on tin and press down and form chip and weld with substrate;
(b) place the second chip on tin and press down and form chip and weld with substrate;
Be provided with around the die pressing surface of described pressing die head and consist of rectangular four perimeter rows air drains;
The degree of depth of described die pressing surface is 0.04mm, and the degree of depth of described perimeter rows air drain is 0.16mm.
2. one-step die-bonding process of two semiconductor chips according to claim 1, it is characterized in that: the diagonal of described perimeter rows air drain is provided with the cross bleed groove.
3. one-step die-bonding process of two semiconductor chips according to claim 2, it is characterized in that: described cross bleed groove is identical with the degree of depth and the width of described perimeter rows air drain.
4. one-step die-bonding process of two semiconductor chips according to claim 2, it is characterized in that: the degree of depth of described cross bleed groove is less than the degree of depth of described perimeter rows air drain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110213819 CN102270591B (en) | 2011-07-29 | 2011-07-29 | One-step die-bonding process of two semiconductor chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110213819 CN102270591B (en) | 2011-07-29 | 2011-07-29 | One-step die-bonding process of two semiconductor chips |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102270591A CN102270591A (en) | 2011-12-07 |
| CN102270591B true CN102270591B (en) | 2013-04-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201110213819 Active CN102270591B (en) | 2011-07-29 | 2011-07-29 | One-step die-bonding process of two semiconductor chips |
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| CN (1) | CN102270591B (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3929287A1 (en) * | 1989-09-04 | 1991-03-21 | Interlot Gmbh | METHOD AND DEVICE FOR PRODUCING SOLDER BARS WITH A COPPER PART |
| JP2004296886A (en) * | 2003-03-27 | 2004-10-21 | Shinko Electric Ind Co Ltd | Down set working device and method for lead frame, and lead frame |
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| CN102270591A (en) | 2011-12-07 |
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