CN102254833A - 发光二极管封装制程 - Google Patents

发光二极管封装制程 Download PDF

Info

Publication number
CN102254833A
CN102254833A CN2010101738132A CN201010173813A CN102254833A CN 102254833 A CN102254833 A CN 102254833A CN 2010101738132 A CN2010101738132 A CN 2010101738132A CN 201010173813 A CN201010173813 A CN 201010173813A CN 102254833 A CN102254833 A CN 102254833A
Authority
CN
China
Prior art keywords
emitting diode
light
substrate
encapsulation procedure
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010101738132A
Other languages
English (en)
Inventor
林升柏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Original Assignee
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rongchuang Energy Technology Co ltd, Zhanjing Technology Shenzhen Co Ltd filed Critical Rongchuang Energy Technology Co ltd
Priority to CN2010101738132A priority Critical patent/CN102254833A/zh
Publication of CN102254833A publication Critical patent/CN102254833A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Led Device Packages (AREA)

Abstract

本发明涉及一种发光二极管的封装制程，其系采用玻璃作为发光二极管封装的材质，以压缩成型的方式将玻璃直接形成于封装基板上形成封装层。如此，不但可以避免黄化和碎裂以及封装层与承载基板接合处产生应力而分离的问题，更可以避免二极管晶片以及打线区域接触液化玻璃材料造成破坏，同时简化制程。藉此，可以有效地提高高功率发光二极管封装结构的产能及良率。

Description

发光二极管封装制程
技术领域
本发明涉及一种封装制程，特别是发光二极管封装制程。
背景技术
现在，高功率的发光二极管(Light Emitting Diode，LED)因其能够更好地提高能源效率和提供更好的照明效果开始被广泛应用到很多领域。现有的高功率发光二极管是以增加电流的方式来提高其发光效率，而随着电流的提高，局部热量会过度升高，从而影响高功率发光二极管的性能与寿命，这就使高功率发光二极管的封装不同于一般发光二极管的封装，增加了难度。
一般发光二极管封装结构，其封装胶体大都使用环氧树脂或硅氧烷。图1为现有技术的半导体元件封装结构的剖面示意图。此半导体元件10结构的封装是采用模压制程使透明封胶材料11(环氧树脂或硅氧烷)覆盖晶粒12、金属导线13和薄膜基板14上，从而达到防湿气与保护的效果。但环氧树脂在高温下容易产生黄化以及碎裂，会降低发光组件的寿命且不适合使用在高功率发光二极管封装上。为了改善上述的问题，有现有技术利用硅树脂作为封装层的材料以改善黄化以及碎裂问题，但硅树脂用于封装时，特别是高功率产品封装时，往往因为硅树脂热膨胀系数与承载基板的差异，造成封装层与承载基板接合处产生应力，使得封装层与基板容易剥落。因此，有现有技术将玻璃材质运用在发光二极管封装上，特别是高功率发光二极管封装。
然而，利用玻璃材质作为发光二极管封装材料时，由于玻璃的熔点高，当液化的玻璃直接注入封装基板时，会造成发光二极管晶片以及打线遭受破坏，因此现有的制程无法直接将玻璃形成于封装板上，而需要先模铸并冷却后方能黏合于封装基板上。但如此一来会造成封装制程复杂，需多道制程方能完成。
发明内容
有鉴于此，本发明旨在提供适用于高功率发光二极管的封装制程。
一种发光二极管的封装制程，包括以下步骤：提供一基板，该基板具有若干反射杯；形成电路结构于基板上，该电路结构包含一正电极以及一负电极；将若干发光二极管晶片电性连结于电路结构；利用压缩成型的技术，在反射杯上形成玻璃封装层并将发光二极管晶片封装在反射杯内。
与现有技术相比，本发明实施方式提供的发光二极管封装制程，采用压缩成型技术并利用玻璃作为发光二极管封装材料，避免了高温下黄化和碎裂等问题，同时简化了封装制程。
下面参照附图，结合具体实施例对本发明作进一步的描述。
附图说明
图1为现有技术的元件封装结构的剖面示意图。
图2至图6C为本发明第一实施例发光二极管的封装制程的步骤示意图。
图7为本发明第二实施例发光二极管封装制程得到的发光二极管封装结构示意图。
图8为本发明第三实施例发光二极管封装制程得到的发光二极管封装结构示意图。
图9为本发明第四实施例发光二极管封装制程得到的发光二极管封装结构示意图。
图10为本发明第五实施例发光二极管封装制程得到的发光二极管封装结构示意图。
主要元件符号说明
半导体元件               10
透明封胶材料             11
晶粒                     12
金属导线                      13
薄膜基板                      14
基板                          20
反射杯                        21
上表面                        22
电路结构                      30
正电极                        31
负电极                        32
发光二极管晶片                41
凹陷                          50
液态玻璃                      51
模具                          52
台阶                          53
玻璃封装层                    54、61、62
氮气                          55
荧光层                        71
萤光粉                        72
反射层                        81
具体实施方式
以下，将结合附图及实施例对本技术方案的发光二极管的封装制程进行详细说明。
图2为本发明第一实施例发光二极管的封装制程的步骤流程图。请同时参考图3，首先提供一基板20，基板20的上表面22上有若干反射杯21，基板20和反射杯21可为一体结构，材料为陶瓷或者硅。
如图4所示，在基板20上形成电路结构30，该电路结构30包含一正电极31以及一负电极32。该电路结构30可通过机械、蚀刻或激光加工技术在基板20上钻孔后，再利用溅镀、电镀、电铸或蒸镀的方式形成。该电路结构30也可以是热电分离的结构，即热能与电能的传递路径彼此不同。
如图5所示，将若干发光二极管晶片41电性连接于电路结构30中并设置在反射杯21内。此电性连接的步骤可以采用覆晶、共晶或者固晶打线的方式完成。在本实施例中，是采用覆晶方式将若干发光二极管晶片41电性连接于电路结构30中。
图6A至6C是形成玻璃封装层的压缩成型步骤的示意图。如图6A所示，将完成上述电性连接步骤的基板20翻转，使基板20的上表面22朝向填充有液态玻璃51的模具52。模具52上对应每一反射杯21设有一凹陷50，凹陷50内凸设有一台阶53。液态玻璃51填充在凹陷50内并覆盖台阶53。如图6B所示，将基板20向下移动，使反射杯21浸入液态玻璃51材料中，直到反射杯21的顶部被台阶53顶住，此时基板21已不能再向下移动，由此保障模具52中的液态玻璃51未与发光二极管晶片41接触，从而避免发光二极管晶片41以及电路结构30等其他区域接触液态玻璃51造成破坏。当然在其他实施例中模具52内也可不用形成台阶53而采用其他方法，例如控制基板20的位移距离以保障发光二极管晶片41与液态玻璃51相间隔，或者设置模具52内的液态玻璃51的量，使基板20与模具52相抵靠时，液态玻璃51仍与发光二极管晶片41相间隔。请参图6C，待液态玻璃51固化形成固态的玻璃封装层54后，使玻璃封装层54与模具52分离，从而完成此封装过程。本实施例中，玻璃封装层54呈圆顶形。在此压缩成型过程中，还可将氮气55注入基板20与模具52之间或者在氮气55的环境下进行压缩成型的过程，由此，可以避免空气中的水气或氧化因子等进入发光二极管封装结构内，造成发光二极管晶片41寿命减少或封装良率不佳。同时，氮气55也可以由惰性气体替代，例如：氦(He)、氖(Ne)、氩(Ar)、氪(Kr)、氙(Xe)或氡(Rn)等。
图7为本发明第二实施例发光二极管封装制程得到的发光二极管封装结构示意图。相较于第一实施例，本实施例通过改变模具52的凹陷50的深度和底面形状，使盛装液态玻璃51的凹陷50的底面呈平坦状，从而使形成的玻璃封装层61呈平板状。
图8为本发明第三实施例发光二极管封装制程得到的发光二极管封装结构示意图。本实施例在第二实施例封装的过程中，在压缩成型过程之后在玻璃封装层61的表面形成一层荧光层71，从而可改变发出光的光特性。所述萤光层71包含萤光转换材料，其中萤光转换材料可以为石榴石基荧光粉、硅酸盐基荧光粉、原硅酸盐基荧光粉、硫化物基荧光粉、硫代镓酸盐基荧光粉和氮化物基荧光粉。
图9为本发明第四实施例发光二极管封装制程得到的发光二极管封装结构示意图。本实施例在第二实施例封装的过程中，在压缩成型步骤之前，在液态玻璃中加入萤光粉72，使萤光粉72悬浮于液态玻璃中，加入此步骤后再进行后续步骤。当液态玻璃固化形成固态的玻璃封装层62后由于内部萤光粉72的加入使玻璃封装层62具有萤光转换的特性。同样的，本实施例中的萤光粉72可以为石榴石基荧光粉、硅酸盐基荧光粉、原硅酸盐基荧光粉、硫化物基荧光粉、硫代镓酸盐基荧光粉和氮化物基荧光粉。
图10为本发明第五实施例发光二极管封装制程得到的发光二极管封装结构示意图。本实施例在封装过程中，提供基板20时即在基板20的反射杯21的表面形成一层金属或者非金属的反射层81，从而增加反射效率。
在本发明上述各个实施例中，封装层玻璃材料可为二氧化硅(SiO2)或硅酸钠(NaO·nSiO2(n＞0))，其中硅酸钠的熔点较二氧化硅低，因此较不易破坏封装结构内的各元件。
本发明的技术内容及技术特点已揭露如上，然而本领域技术人员仍可能基于本发明的教示及揭示而作出种种不背离本发明精神的替换及修饰。因此，本发明的保护范围应不限于实施例所揭示的内容，而应包括各种不背离本发明的替换及修饰，并为所附的权利要求所涵盖。

Claims (10)

1.一种发光二极管的封装制程，包括以下步骤：
提供一基板，该基板具有若干反射杯；
形成电路结构于基板上，该电路结构包含一正电极以及一负电极；
将若干发光二极管晶片电性连结于电路结构；以及
利用压缩成型技术，在反射杯上形成玻璃封装层并将发光二极管晶片封装在反射杯内。
2.如权利要求1所述的发光二极管的封装制程，其特征在于：在所述反射杯的表面形成反射层。
3.如权利要求1所述的发光二极管的封装制程，其特征在于：所述电路结构是利用机械、蚀刻或激光加工技术在基板上钻孔后，再利用溅镀、电镀、电铸或蒸镀的方式形成于基板上。
4.如权利要求1所述的发光二极管的封装制程，其特征在于：在压缩成型过程中，提供一盛装液态玻璃的模具，并使所述反射杯浸入液态玻璃，液态玻璃冷却后形成所述玻璃封装层。
5.如权利要求4所述的发光二极管的封装制程，其特征在于：在压缩成型过程中，所述液态玻璃与发光二极管晶片相间隔。
6.如权利要求5所述的发光二极管的封装制程，其特征在于：所述模具设有若干凹陷，凹陷内设有用于抵靠反射杯的台阶，所述液态玻璃盛装在凹陷内并覆盖所述台阶。
7.如权利要求4所述的发光二极管的封装制程，其特征在于：压缩成型的过程在氮气或惰性气体的环境下实施或者将氮气或惰性气体注入基板与模具之间。
8.如权利要求1所述的发光二极管的封装制程，其特征在于：在所述玻璃封装层表面形成荧光层。
9.如权利要求1所述的发光二极管的封装制程，其特征在于：在所述玻璃封装层中包含萤光转换材料。
10.如权利要求1所述的发光二极管的封装制程，其特征在于：所述玻璃封装层的材料为二氧化硅(SiO2)或硅酸钠(NaO·nSiO2(n＞0))。
CN2010101738132A 2010-05-17 2010-05-17 发光二极管封装制程 Pending CN102254833A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010101738132A CN102254833A (zh) 2010-05-17 2010-05-17 发光二极管封装制程

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010101738132A CN102254833A (zh) 2010-05-17 2010-05-17 发光二极管封装制程

Publications (1)

Publication Number Publication Date
CN102254833A true CN102254833A (zh) 2011-11-23

Family

ID=44982004

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010101738132A Pending CN102254833A (zh) 2010-05-17 2010-05-17 发光二极管封装制程

Country Status (1)

Country Link
CN (1) CN102254833A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103311400A (zh) * 2012-03-15 2013-09-18 展晶科技(深圳)有限公司 发光二极管封装结构的制造方法
CN103367599A (zh) * 2012-04-03 2013-10-23 展晶科技(深圳)有限公司 发光二极管封装结构的制造方法
CN107331719A (zh) * 2016-04-27 2017-11-07 南茂科技股份有限公司 光电芯片封装体及光电芯片封装制程

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2861742Y (zh) * 2005-06-22 2007-01-24 重庆万道光电科技有限公司 一种led灯多透镜集合透镜
JP2008060428A (ja) * 2006-08-31 2008-03-13 Nichia Chem Ind Ltd 発光装置およびその製造方法
CN201141564Y (zh) * 2007-12-05 2008-10-29 王元成 一种采用水晶玻璃封装的led

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2861742Y (zh) * 2005-06-22 2007-01-24 重庆万道光电科技有限公司 一种led灯多透镜集合透镜
JP2008060428A (ja) * 2006-08-31 2008-03-13 Nichia Chem Ind Ltd 発光装置およびその製造方法
CN201141564Y (zh) * 2007-12-05 2008-10-29 王元成 一种采用水晶玻璃封装的led

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103311400A (zh) * 2012-03-15 2013-09-18 展晶科技(深圳)有限公司 发光二极管封装结构的制造方法
CN103367599A (zh) * 2012-04-03 2013-10-23 展晶科技(深圳)有限公司 发光二极管封装结构的制造方法
CN107331719A (zh) * 2016-04-27 2017-11-07 南茂科技股份有限公司 光电芯片封装体及光电芯片封装制程

Similar Documents

Publication Publication Date Title
JP4979299B2 (ja) 光学装置及びその製造方法
CN102290524B (zh) 一种led器件及其led模组器件
US20080169480A1 (en) Optoelectronic device package and packaging method thereof
CN108054254B (zh) 半导体发光结构及半导体封装结构
US20120025243A1 (en) Led package and method for manufacturing the same
US9559276B2 (en) LED metal substrate package and method of manufacturing same
CN102194801A (zh) 正向发光的发光二极管封装结构及其形成方法
US8883533B2 (en) Method for manufacturing light emitting diode package
KR101310107B1 (ko) Ｕｖｌｅｄ 소자용 봉지재, 그를 이용한 ｕｖｌｅｄ 소자 및 그의 제조 방법
CN103236490A (zh) Led倒装芯片封装器件、其制造方法及使用其的封装结构
CN101834256B (zh) 发光器件封装
CN102254833A (zh) 发光二极管封装制程
CN101777549B (zh) 化合物半导体元件的封装模块结构及其制造方法
CN102760822A (zh) 发光二极管封装结构及其制造方法
TWI407598B (zh) 發光二極體封裝製程
TWI528596B (zh) 發光二極體封裝結構及其製造方法
JP2009135543A (ja) 発光装置の製造方法
TWI412163B (zh) 發光二極體封裝結構及其製造方法
CN102610586A (zh) 封装载板
CN104979441A (zh) 一种led芯片及其制作方法及led显示装置
TW201208132A (en) Method for manufacturing LED
Cao et al. Silicon-based system in packaging for light emitting diodes
CN101510579B (zh) 发光元件及其制作方法
CN103325934A (zh) 发光二极管封装结构及其制造方法
CN103022275B (zh) 发光二极管的封装方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20111123