CN102252777B - Optical fiber temperature detector based on one-dimensional photonic crystal defect mode - Google Patents
Optical fiber temperature detector based on one-dimensional photonic crystal defect mode Download PDFInfo
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- CN102252777B CN102252777B CN201110100781.8A CN201110100781A CN102252777B CN 102252777 B CN102252777 B CN 102252777B CN 201110100781 A CN201110100781 A CN 201110100781A CN 102252777 B CN102252777 B CN 102252777B
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Abstract
The invention discloses an optical fiber temperature detector based on a one-dimensional photonic crystal defect mode. A light source of the detector is positioned on the left side of a first transmission optical fiber; an optical fiber coupler is positioned on the right side of the first transmission optical fiber; a second transmission optical fiber is positioned at the right end of the optical fiber coupler; a one-dimensional photonic crystal is positioned at the right end of the second transmission optical fiber; a third transmission optical fiber is positioned on the left side of the optical fiber coupler and receives detection light which is reflected by the one-dimensional photonic crystal and is transmitted by the second transmission optical fiber and the optical fiber coupler to the third transmission optical fiber; a semiconductor optical power meter is positioned on the left side of the third transmission optical fiber and determines the power of light output by the third transmission optical fiber; the one-dimensional photonic crystal is formed by alternatively arranging silicon and silicon oxide in the laser transmission direction, and the defect mode is introduced into one silicon dielectric layer; and the optical thickness of all dielectric layers is equal and the thickness of the silicon dielectric layer into which the defect mode is introduced is 2 to 3 times the optical thickness of each dielectric layer. The optical fiber temperature detector has a simple structure, and a small volume, and is high in measurement accuracy and low in cost.
Description
Technical field
The present invention relates to a kind of fiber optic temperature detector, be applied to strong-electromagnetic field, inflammable and explosive, longly survey apart from the temperature under the environment based on 1-D photon crystal defective mould.
Background technology
Temperature is one of basic physical amount in the science and technology, also is one of the most general most important parameter in the commercial production.Temperature detection is occupied crucial status in industrial system and the practical applications in modern times.Along with the develop rapidly of Fibre Optical Communication Technology, optical passive component technology increasingly mature, the fiber optic temperature detector has obtained to use widely.Existing fiber optic temperature detector realizes that through the traditional multilayer film of vapor deposition on fibre-optical probe sensitivity and precision that temperature is surveyed are not very high mostly.Research to the fiber optic temperature detector at present mainly concentrates on three aspects: the research of a thermally sensitive semiconductor material, and more semiconductor material is applied to semiconductor-type fiber optic temperature detector; The 2nd, the research of system architecture and modulation technique.In order to overcome the influence of environmental factor, need establish the optical path compensation and the intensity reference of certain form to system.The 3rd, the research of commercialization practicability is promptly from point of practical use, to satisfying particular requirement, being applied to the research and development of the fiber optic temperature detector utility system of specific occasion.But above-mentioned research does not up to the present still solve fiber optic temperature detector long term operation stability and anti-interference problem, and measuring accuracy is poor, and cost is high.
Photonic crystal is a kind of little dielectric structure of periodicity for preparing according to the structural symmetry of natural crystal.The most basic characteristic of photonic crystal has forbidden photon band exactly, and the light of frequency in the forbidden photon band frequency can not be propagated in photonic crystal owing to receive the strong Bragg diffraction of periodic dielectric material.When in complete photonic crystal, introducing defective, a defective mould can appear in the forbidden photon band, and the luminous energy that originally can not in photonic crystal, propagate is propagated in defective, this has just formed photon crystal wave-guide.1-D photon crystal is alternately rearranged in the one dimension direction by two kinds of media with big refringence.When variation of ambient temperature; The refractive index that constitutes two kinds of different mediums of 1-D photon crystal can change along with variation of temperature; And cause the transmission peaks wavelength of defective mould to be subjected to displacement thus, and also can cause that the light transmission of original transmission peaks wavelength descends simultaneously, reflectivity increases.And the existing 1-D photon crystal defective mould that utilizes is realized the device that temperature is surveyed, and all is the discrete bigger device of volume, can not realize that very the multiple spot of zonule is surveyed.
Summary of the invention
The invention discloses a kind of fiber optic temperature detector based on 1-D photon crystal defective mould, it is poor that its purpose is to overcome stability and anti-interference that existing fiber optic temperature detector exists, and measuring accuracy is low, drawbacks such as cost height.The present invention through 1-D photon crystal vapor deposition with defective mould to the fibre-optical probe end face; Thereby had fibre optic temperature sensor miniaturization, long distance, anti-electromagnetic interference (EMI) and the low characteristics of cost, had the characteristics that defective mould 1-D photon crystal temperature detection sensitivity is high, precision is high that contain simultaneously again.Therefore this patent has good application prospects, marketable value.
Technical scheme of the present invention is achieved in that
A kind of fiber optic temperature detector based on 1-D photon crystal defective mould includes detector light source, 1-D photon crystal, fiber coupler, first Transmission Fibers, second Transmission Fibers, the 3rd Transmission Fibers and semiconductor light power meter; It is characterized in that:
A) said detector light source is positioned at first Transmission Fibers left side; And the detection light of outgoing directly is coupled in first Transmission Fibers; Said fiber coupler is positioned at the first Transmission Fibers right side; Survey light and arrive fiber coupler after through first Transmission Fibers, said second Transmission Fibers is positioned at the right-hand member of fiber coupler, and surveys light direct entering second Transmission Fibers after the fiber coupler outgoing; Said 1-D photon crystal is positioned at the second Transmission Fibers right-hand member; And survey light and directly get into 1-D photon crystal by second Transmission Fibers, said the 3rd Transmission Fibers is positioned at the fiber coupler left side, and receives the detection light that transfers to the 3rd Transmission Fibers place by the 1-D photon crystal reflection and via second Transmission Fibers and fiber coupler; Said semiconductor light power meter is positioned at the left side of the 3rd Transmission Fibers, and measures the power of the 3rd Transmission Fibers output light;
B) described 1-D photon crystal is that silicon and silicon dioxide alternately rearrange on the Laser Transmission direction, and one deck silicon dielectric layer is introduced the defective mould therein;
C) except that the silicon dielectric layer of introducing the defective mould, the optical thickness of each dielectric layer equates, and the thickness of the silicon dielectric layer of introducing defective mould is 2-3 times of each dielectric layer optical thickness.
Described 1-D photon crystal is directly to plate through the mode of vacuum evaporation to be attached on the second Transmission Fibers right-hand member end face.
The detection light wavelength that said detector sends is λ=1.55 μ m.
The present invention is based on the fiber optic temperature detector of 1-D photon crystal defective mould; Not only simple in structure, advantages of small volume, and also measuring accuracy is high; Cost is low; 1-D photon crystal is very responsive to temperature, and defective mould is wherein changed by silicon layer thickness to be introduced, and Effect on Detecting with respect to traditional fiber optic temperature detector more accurately and reliably.Need not require efforts in the detection process and adjust complicated light path, also not need manual operation or adjust any parts, the semiconductor light power meter measuring accuracy of use is high, response speed is fast.Can be used to solve the quick measurement and the variation of ambient temperature record of the temperature value under the rugged surroundings such as strong-electromagnetic field, inflammable and explosive, long distance.
Description of drawings
Fig. 1 is the structural representation of 1-D photon crystal;
Fig. 2 is the structural representation of fiber optic temperature detector of the present invention.
1, detector light source, 2, first Transmission Fibers, 3, fiber coupler, 4, second Transmission Fibers, 5,1-D photon crystal, the 6, the 3rd Transmission Fibers, 7, the semiconductor light power meter, 8, silicon dioxide, 9, silicon.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is explained further details.
A kind of fiber optic temperature detector based on 1-D photon crystal defective mould, structure is as shown in Figure 1: include detector light source 1,1-D photon crystal 5, fiber coupler 3, first Transmission Fibers 2, second Transmission Fibers 4, the 3rd Transmission Fibers 6 and semiconductor light power meter 7; Said detector light source 1 is positioned at first Transmission Fibers, 2 left sides; And the detection light of outgoing directly is coupled in first Transmission Fibers; Said fiber coupler 3 is positioned at first Transmission Fibers, 2 right-hand members; Survey light through arriving fiber coupler 3 after first Transmission Fibers, said second Transmission Fibers 4 is positioned at the right side of fiber coupler 3, and detection light directly gets into second Transmission Fibers 4 after fiber coupler 3 outgoing; Said 1-D photon crystal 5 is positioned at second Transmission Fibers, 4 right-hand members; And survey light and directly get into 1-D photon crystal 5 by second Transmission Fibers 4, said the 3rd Transmission Fibers 6 is positioned at fiber coupler 3 left sides, and receives the detection light that transfers to the 3rd Transmission Fibers place by 1-D photon crystal 5 reflections and via second Transmission Fibers 4 and fiber coupler 3; Said semiconductor light power meter 7 is positioned at the left side of the 3rd Transmission Fibers 6, and measures the power of the 3rd Transmission Fibers output light;
The concrete operations step is following:
1, input light
The present invention is because the selected detection wavelength of detector is 1.55 μ m, and the loss of in optical fiber, transmitting is very little, so optical loss can be ignored.
2, operating process
The first step: this detector is placed environment to be measured, when detector is identical with environment temperature, could begin to survey, otherwise measurement data is inaccurate.
Second step: after detector temperature and environmental facies are same; Open detector light source 1; Directly be coupled into behind the laser emitting in first Transmission Fibers 2, arrive fiber coupler 3 from Transmission Fibers then, change over to through laser behind the fiber coupler and continue transmission forward in second Transmission Fibers 4; Laser arrives detecting element 1-D photon crystal 5 through second Transmission Fibers, 4 backs; The detecting element 1-D photon crystal is that directly plating is attached on the right-hand member light output end face of second Transmission Fibers 4, when temperature not simultaneously, the refractive index of silicon 9 and silicon dioxide 8 can change and cause the variation of forbidden band scope in the photonic crystal simultaneously in the 1-D photon crystal; Energy of reflection light after causing detector light source output light through the 1-D photon crystal reflection at last changes, and reflected light returns and get into second Transmission Fibers 4.
The 3rd step: reflected light arrives fiber coupler 3 once more after second Transmission Fibers 4 is returned; Pass fiber coupler 3 then and get into the 3rd Transmission Fibers 6; Last reflected light arrives semiconductor light power meter 7 through the 3rd Transmission Fibers 6, detects luminous power size and output by the semiconductor light power meter.
The 4th step: judge environment temperature according to the Output optical power size.
Silica dioxide medium layer in the above-mentioned 1-D photon crystal and silicon dielectric layer are to export the right side through the mode of vacuum evaporation at second Transmission Fibers, 4 light successively to form photon crystal structure; Vapor deposition is five layers successively; I.e. three layers of silica dioxide medium layer, two-layer silicon dielectric layer, also silica membrane on the vapor deposition of 1-D photon crystal side therein; This structure can prevent the pollution and the oxidation of silicon membrane layer; Be convenient to obtain clean fine and close 1-D photon crystal film, introduce the defective mould therein on one deck silicon dielectric layer, this layer silicon dielectric layer thickness will reach 2-3 times of other each layer thicknesses.
Claims (3)
1. the fiber optic temperature detector based on 1-D photon crystal defective mould includes detector light source, 1-D photon crystal, fiber coupler, first Transmission Fibers, second Transmission Fibers, the 3rd Transmission Fibers and semiconductor light power meter; It is characterized in that:
A) said detector light source is positioned at first Transmission Fibers left side; And the detection light of outgoing directly is coupled in first Transmission Fibers; Said fiber coupler is positioned at the first Transmission Fibers right side; Survey light and arrive fiber coupler after through first Transmission Fibers, said second Transmission Fibers is positioned at the right-hand member of fiber coupler, and surveys light direct entering second Transmission Fibers after the fiber coupler outgoing; Said 1-D photon crystal is positioned at the second Transmission Fibers right-hand member; And survey light and directly get into 1-D photon crystal by second Transmission Fibers, said the 3rd Transmission Fibers is positioned at the fiber coupler left side, and receives the detection light that transfers to the 3rd Transmission Fibers place by the 1-D photon crystal reflection and via second Transmission Fibers and fiber coupler; Said semiconductor light power meter is positioned at the left side of the 3rd Transmission Fibers, and measures the power of the 3rd Transmission Fibers output light;
B) described 1-D photon crystal is that silicon and silicon dioxide alternately rearrange on the Laser Transmission direction, and one deck silicon dielectric layer is introduced the defective mould therein;
C) except that the silicon dielectric layer of introducing the defective mould, the optical thickness of each dielectric layer equates, and the thickness of the silicon dielectric layer of introducing defective mould is 2-3 times of each dielectric layer optical thickness.
2. the fiber optic temperature detector based on 1-D photon crystal defective mould according to claim 1 is characterized in that: described 1-D photon crystal is directly to plate through the mode of vacuum evaporation to be attached on the second Transmission Fibers right-hand member end face.
3. the fiber optic temperature detector based on 1-D photon crystal defective mould according to claim 1 is characterized in that: the detection light wavelength that said detector sends is λ=1.55 μ m.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110100781.8A CN102252777B (en) | 2011-04-21 | 2011-04-21 | Optical fiber temperature detector based on one-dimensional photonic crystal defect mode |
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| CN201110100781.8A CN102252777B (en) | 2011-04-21 | 2011-04-21 | Optical fiber temperature detector based on one-dimensional photonic crystal defect mode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101216354A (en) * | 2008-01-11 | 2008-07-09 | 深圳大学 | Photon crystal optical fibre refractivity temperature sensor and measuring systems |
| CN101458401A (en) * | 2008-12-22 | 2009-06-17 | 中国航天科技集团公司第五研究院第五一○研究所 | Design method for two-channel photon crystal device |
| CN201392311Y (en) * | 2009-04-27 | 2010-01-27 | 浙江大学 | Reflection-type optical fiber biochemistry sensor based on long period optical fiber grating |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7039285B2 (en) * | 2001-12-13 | 2006-05-02 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing photonic crystal, mask, method of manufacturing mask and method of manufacturing optical device |
| EP1708000A4 (en) * | 2004-01-22 | 2007-08-01 | Matsushita Electric Ind Co Ltd | Optical device, and production method for photonic crystal slab |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101216354A (en) * | 2008-01-11 | 2008-07-09 | 深圳大学 | Photon crystal optical fibre refractivity temperature sensor and measuring systems |
| CN101458401A (en) * | 2008-12-22 | 2009-06-17 | 中国航天科技集团公司第五研究院第五一○研究所 | Design method for two-channel photon crystal device |
| CN201392311Y (en) * | 2009-04-27 | 2010-01-27 | 浙江大学 | Reflection-type optical fiber biochemistry sensor based on long period optical fiber grating |
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