CN102246285A - Resin paste for die bonding, method for producing semiconductor device, and semiconductor device - Google Patents

Resin paste for die bonding, method for producing semiconductor device, and semiconductor device Download PDF

Info

Publication number
CN102246285A
CN102246285A CN2009801502835A CN200980150283A CN102246285A CN 102246285 A CN102246285 A CN 102246285A CN 2009801502835 A CN2009801502835 A CN 2009801502835A CN 200980150283 A CN200980150283 A CN 200980150283A CN 102246285 A CN102246285 A CN 102246285A
Authority
CN
China
Prior art keywords
resin
semiconductor device
chip
die bonding
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2009801502835A
Other languages
Chinese (zh)
Inventor
森修一
杉浦良史
片山阳二
横地精吾
押小路萌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of CN102246285A publication Critical patent/CN102246285A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/72—Polyisocyanates or polyisothiocyanates
    • C08G18/74—Polyisocyanates or polyisothiocyanates cyclic
    • C08G18/76—Polyisocyanates or polyisothiocyanates cyclic aromatic
    • C08G18/7657—Polyisocyanates or polyisothiocyanates cyclic aromatic containing two or more aromatic rings
    • C08G18/7664—Polyisocyanates or polyisothiocyanates cyclic aromatic containing two or more aromatic rings containing alkylene polyphenyl groups
    • C08G18/7671—Polyisocyanates or polyisothiocyanates cyclic aromatic containing two or more aromatic rings containing alkylene polyphenyl groups containing only one alkylene bisphenyl group
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08—Processes
    • C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/2805—Compounds having only one group containing active hydrogen
    • C08G18/2815—Monohydroxy compounds
    • C08G18/282—Alkanols, cycloalkanols or arylalkanols including terpenealcohols
    • C08G18/2825—Alkanols, cycloalkanols or arylalkanols including terpenealcohols having at least 6 carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/48—Polyethers
    • C08G18/4854—Polyethers containing oxyalkylene groups having four carbon atoms in the alkylene group
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83856—Pre-cured adhesive, i.e. B-stage adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01011—Sodium [Na]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Abstract

The present invention relates to a resin paste for die bonding, which comprises a polyurethane imide resin represented by general formula (I), a thermosetting resin, a filler, and a solvent for printing, wherein the amount of the thermosetting resin added is 250 to 500 parts by mass relative to 100 parts by mass of the polyurethane imide resin. [In the formula, R<1> represents a bivalent organic group containing an aromatic ring or an aliphatic ring; R<2> represents a bivalent organic group having a molecular weight of 100 to 10,000; R<3> represents a tetravalent organic group containing at least 4 carbon atoms; and n and m independently represent an integer of 1 to 100].

Description

The manufacture method of resin paste for die bonding material, semiconductor device and semiconductor device
Technical field
The present invention relates to manufacture method and the semiconductor device of a kind of chip join (die bonding) with resin thickener, semiconductor device, more specifically, the resin paste for die bonding material that relates to a kind of grafting material (chip join material) as semiconductor element such as IC, LSI and holding componentss such as lead frame or insulating properties support substrate, and the manufacture method and the semiconductor device that use the semiconductor device of this thickener.
Background technology
All the time, as the grafting material of IC or LSI and lead frame, known have Au-Si eutectic alloy, scolding tin or silver to stick with paste etc.In addition, the chip join that also proposed to use the bonding film of specific polyimide resin in the past, adds electroconductive stuffing or inorganic filler in specific polyimide resin is with bonding film (referring to patent documentation 1～3).
The prior art document
Patent documentation
Patent documentation 1: Japanese kokai publication hei 07-228697 communique
Patent documentation 2: Japanese kokai publication hei 06-145639 communique
Patent documentation 3: Japanese kokai publication hei 06-264035 communique
Summary of the invention
The problem that invention will solve
Above-mentioned Au-Si eutectic alloy is though because modulus of elasticity is big, therefore when being applied to jumbo chip, there are crackly problem in its thermal endurance and moisture-proof height.In addition, the Au-Si eutectic alloy also has expensive shortcoming.On the other hand, though scolding tin is cheap, its poor heat resistance, and its modulus of elasticity and Au-Si eutectic alloy are high equally, are difficult to be applicable to jumbo chip.
To this, silver is stuck with paste low price, and moisture-proof height, modulus of elasticity are lower than Au-Si eutectic alloy and scolding tin, and have the thermal endurance applicable to 350 ℃ of hot pressing mould assembly wire-bonded degree.Therefore, the silver paste is the main flow of chip join material at present.Yet, highly integrated along with IC, LSI, chip is also maximizing, and is therefore sticking with paste with silver when engaging IC or LSI and lead frame, is difficult to the silver paste spread out on whole of chip be coated with.
In addition,, just be extensive use of the insulating properties support substrate along with the miniaturization and the lightweight of encapsulation in recent years, and, in order to reduce manufacturing cost, use the high print process of production to provide the method for chip join material just to receive publicity.In this case, if want expeditiously the bonding film of record in the above-mentioned patent documentation 1～3 to be supplied with and pasted on the insulating properties support substrate, then need in advance its cutting (or die-cut) to be become die size, and then paste bonding film.
Bonding film is cut into die size, is pasted on the method for substrate again, the sticker that need be used for enhancing productivity.In addition, bonding film is carried out die-cut, the method that a plurality of chips are pasted together causes the waste of bonding film easily again.Further,, therefore paste on the surface of bonding film concavo-convex morely, and when pasting bonding film, produce the space, cause reliability to descend easily because the major part of insulating properties support substrate is at the inner internal layer distribution that forms of substrate.
In addition, on substrate, form the chip join material in advance, again semiconductor chip is pasted method thereon, be before pasting semiconductor chip, with the dry semi-solid preparation (B stageization) of chip join material that is coated on the substrate, then semiconductor chip is carried out pressing with it, and in 180 ℃ baking oven for example with chip join material cured 1 hour, solidify as the back.Usually, be to be put into one by one in support etc. with the substrate after the chip join material B stageization, temporarily take care of.Yet, recently, consider that requirement is directly overlapping operates the substrate after the chip join material B stageization from the summary viewpoint of process management.Overlapping substrate is temporarily taken care of at ambient temperature, and in the operation of pasting semiconductor chip, transports substrate one by one by absorption.Yet, after B stageization, have under the situation of chip join material of viscosity (adherence), when direct overlapping the keeping, the weight of substrate is used as loading and applies, and causes substrate to be pasted each other, can't transport substrate one by one by adsorbing.In addition, after substrate is pasted each other,,, therefore the possibility of reliability decrease is arranged because thickness, the surface roughness of chip join material have all produced variation even it is peeled.Thus, the substrate after the B stageization directly during overlapping the operation, need to reduce viscosity, thereby even apply certain loading at ambient temperature, substrate can not pasted each other yet.
The present invention carries out in light of this situation, provide a kind of after resin thickener B stageization even its objective is, substrate is directly overlapping each other, as also can be easy to peel resin paste for die bonding material has promptly fully reduced the resin paste for die bonding material of viscosity under the B stage condition.In addition, the object of the invention is to provide a kind of manufacture method and semiconductor device that uses said chip to engage the semiconductor device of using the resin thickener.
The method of dealing with problems
To achieve these goals, the invention provides a kind of resin paste for die bonding material, it contains following general formula (I) represented imide-urethane resin, thermosetting resin, filler and printing ink solvent, and the use level of thermosetting resin is 250～500 mass parts with respect to the described imide-urethane resin of 100 mass parts.
Figure BPA00001388895900031
[in the formula, R 1Expression contains the divalent organic group of aromatic ring or aliphat ring, R 2The expression molecular weight is 100～10000 divalent organic group, R 3Expression contains 4 valency organic groups of 4 above carbon atoms, and n and m represent 1～100 integer independently of one another.]
According to this resin paste for die bonding material, by containing the represented imide-urethane resin of above-mentioned general formula (I) simultaneously, and thermosetting resin, filler and printing ink solvent, and, the thermosetting resin that cooperates prescribed limit can play the viscosity under the abundant reduction B stage condition, and after direct each other overlapping keeping the with substrate, peel easily, thereby can be used in the effect of subsequent handling.In addition,, paste the substrate of semiconductor chip at a lower temperature, can supply with at an easy rate by print process and be coated with for needs according to resin paste for die bonding material with above-mentioned formation.
In resin paste for die bonding material of the present invention, filler preferably contains the spherical silicon dioxide particulate.Thus, can further reduce viscosity under the B stage condition.
The present invention also provides a kind of manufacture method of semiconductor device, and its resin paste for die bonding material that comprises the invention described above is coated on the substrate, forms painting process of filming and the semiconductor-chip-mounting operation of carrying semiconductor chip on above-mentioned filming.
Manufacture method according to this semiconductor device, owing to used the resin paste for die bonding material of the invention described above, therefore can under lower temperature, semiconductor chip be sticked on the substrate, and can obtain having the semiconductor device of excellent heat resistance and die bonding.
In addition, the manufacture method of semiconductor device of the present invention preferably behind above-mentioned painting process, further comprises above-mentioned filming is carried out drying so that the drying process of its B stageization, and in above-mentioned semiconductor-chip-mounting operation, on above-mentioned the filming after the B stageization, carry semiconductor chip.
Because resin paste for die bonding material of the present invention can obtain sufficient thermal endurance and die bonding under the B stage condition, therefore, by comprising above-mentioned drying process, can obtain the more excellent semiconductor device of reliability.
The present invention further provides a kind of semiconductor device of manufacture method gained of the semiconductor device by the invention described above.This semiconductor device owing to use the resin paste for die bonding material of the invention described above to paste semiconductor chip on substrate, therefore can obtain excellent thermal endurance and die bonding.
The invention effect
According to the present invention, can provide a kind of and paste the resin paste for die bonding material that the substrate of semiconductor chip can be supplied with at an easy rate and be coated with by print process at a lower temperature for needs.In addition, resin paste for die bonding material of the present invention has thermal endurance, use easily, and low stress and low-temperature adhesion excellence.Further because the viscosity under the B stage condition fully reduces, therefore, can be after B stageization with direct overlapping keeping of substrate, thereby the easy of process management when helping semiconductor device to assemble.Resin paste for die bonding material of the present invention can be used as the chip join purposes and is used for insulating properties support substrate or copper lead frames such as organic substrate aptly, in addition, can also be used for 42 alloy lead wire frames.Further,, can provide a kind of manufacture method of semiconductor device of the resin paste for die bonding material that uses the invention described above according to the present invention, and the semiconductor device of making by this manufacture method.
Description of drawings
[Fig. 1] is the pattern sectional view of a kind of execution mode of expression semiconductor device of the present invention.
Embodiment
Below, preferred implementation of the present invention is elaborated.
Resin paste for die bonding material of the present invention (below, only be called " resin thickener " sometimes) contains the represented imide-urethane resin of (A) following general formula (I) (below, be sometimes referred to as " (A) composition ").
[changing 2]
Figure BPA00001388895900051
[in the formula, R 1Expression contains the divalent organic group of aromatic ring or aliphat ring, R 2The expression molecular weight is 100～10000 divalent organic group, R 3Expression contains 4 valency organic groups of 4 above carbon atoms, and n and m represent 1～100 integer independently of one another.]
In addition, resin thickener of the present invention contains above-mentioned (A) composition, and (B) thermosetting resin (below, be sometimes referred to as " (B) composition "), (C) filler (below, be sometimes referred to as " (C) composition ") and (D) printing ink solvent (below, be sometimes referred to as " (D) composition ").Below, each composition is elaborated.
(A) imide-urethane resin is the represented resin of above-mentioned general formula (I).Herein, in the above-mentioned general formula (I), R 1The represented divalent organic group that contains aromatic ring or aliphat ring is preferably the vulcabond residue, and more preferably comprises the represented structure of following general formula (II) of 10～100mol%.
In addition, as remaining vulcabond residue, can enumerate following formula.
They can use a kind, perhaps will be used in combination more than 2 kinds.
R in the above-mentioned general formula (I) 2Represented molecular weight is 100～10000 divalent organic group, is preferably diol residue.Diol residue, for example group of deriving for glycol such as polybutadiene diol, polyisoprene glycol, PCDL, PTMEG, polyester-diol, polycaprolactone glycol, silicone glycols.R 2The structure that is formed by the represented repetitive of following general formula (III) that more preferably comprises 10～100mol% is as diol residue.
[changing 5]
-(CH 2-CH 2-CH 2-CH 2-O)- (III)
In addition, as remaining diol residue, can enumerate and have following formula:
[changing 6]
-(CH 2-CH(CH 3)-O)-、
-(CH 2-CH 2-O)-、
-(CH 2-CH 2-CH 2-CH 2-O)-、
-(CH 2-CH (CH 3)-O) a-(CH 2-CH 2-O) b-(copolymer of a/b=9～1/1～9mol%),
-[CO-(CH 2) 4-CO-O-(CH 2) 2-O]-、
-[CO-(CH 2) 4-CO-O-(CH 2) 2-O-(CH 2) 2-O]-、
-[CO-(CH 2) 4-CO-O-CH 2-CH(CH 3)-O]-、
-[CO-(CH 2) 4-CO-O-(CH 2) 4-O]-、
-[CO-(CH 2) 4-CO-O-(CH 2) 6-O]-、
-[CO-(CH 2) 4-CO-O-CH 2-C(CH 3) 2-O]-、
-[CO-(CH 2) 8-CO-O-(CH 2) 6-O]-、
-[CO-(CH 2) 5-O]-、
-[CO-O-(CH 2) 6-O]-、
-R 4-(Si (CH 3) 2-O)-R 4-(R 4For carbon number 1～10 organic group)
Structure Deng repetitive.They can use a kind, perhaps will be used in combination more than 2 kinds.Their weight average molecular weight is preferably 100～10000, and more preferably 500～5000.
R in the above-mentioned general formula (I) 3The represented 4 valency organic groups that contain 4 above carbon atoms are preferably the tetracarboxylic anhydride residue, and it can enumerate following formula:
[changing 7]
Figure BPA00001388895900071
Represented respectively group.They can use a kind, perhaps will be used in combination more than 2 kinds.R 3The tetracarboxylic anhydride residue that more preferably contains 4～27 carbon atoms more preferably contains the tetracarboxylic anhydride residue of 4～20 carbon atoms, and is preferably the tetracarboxylic anhydride residue that contains 6～18 carbon atoms especially.
In addition, n in the above-mentioned general formula (I) and m must be 1～100 integer independently of one another, and 1～50 integer more preferably.
(A) imide-urethane resin can be synthetic by conventional methods such as solution polymerization process.For example, when using solution polymerization process, vulcabond and glycol are dissolved in the solvent of the imide-urethane resin that solubilized generates, for example in the N-N-methyl-2-2-pyrrolidone N-(NMP) etc., make them react 1 hour～5 hours the synthesis of polyurethane oligomer down at 70 ℃～180 ℃.Then, add the tetracarboxylic dianhydride, reacted 1 hour～10 hours down, just can obtain the nmp solution of imide-urethane resin at 70 ℃～180 ℃.Then, can according to circumstances further add monohydric alcohol, oxime, amine, isocyanates, acid anhydrides etc., continue reaction, the end of imide-urethane resin is modified.In addition, when synthetic, can also make water, alcohol, tertiary amine etc. as catalyst.
The imide-urethane resin solution of gained can also be according to purpose, by the separation imide-urethane resins such as reprecipitation method that make water.About the vulcabond of formation urethane oligomer and the ratio of components of glycol, preferably make diol component become 0.1～1.0mol with respect to the 1.0mol vulcabond.About the urethane oligomer of formation imide-urethane resin and tetracarboxylic dianhydride's ratio of components, preferably make the tetracarboxylic dianhydride become 0.1～2.0mol with respect to the 1.0mol urethane oligomer.
(A) imide-urethane resin among the present invention, it is by being that the weight average molecular weight of the polystyrene conversion measured of the gel permeation chromatography of solvent is preferably 5000～500000 with the oxolane, and more preferably 10000～100000.When weight average molecular weight less than 5000 the time, have the tendency of mechanical strength of resin step-down, and if it surpasses 500000, the tendency of dissolving resin variation is then arranged.
The use level of (A) composition in the resin thickener is a benchmark with the solid constituent total amount in the resin thickener, is preferably 10～50 quality %.If this use level surpasses 50 quality %, the tendency that then has curable to descend, and if its less than 10 quality %, the tendency of the die bonding decline under the B stage condition is then arranged.
As the thermosetting resin of (B) composition, for example, can preferably enumerate epoxy resin.In addition, as (B) composition, can also use to comprise epoxy resin, phenolic resins or in molecule, have the compound of phenolic hydroxyl group and the resin compound of curing accelerator.By containing (B) thermosetting resin, the resin thickener can obtain high reliability after solidifying simultaneously with encapsulant.
Epoxy resin is the material that contains at least 2 epoxy radicals at molecule, and considers the epoxy resin of the glycidol ether type of preferred phenol from the viewpoint of curable, solidfied material characteristic.As this resin, can enumerate the condensation product of bisphenol-A, bisphenol-A D, bisphenol S, Bisphenol F or halogenation bisphenol-A and chloropropylene oxide, the glycidol ether of phenol novolac resin, the glycidol ether of cresols novolac resin, the glycidol ether of bisphenol-A phenolic varnish gum.They can use a kind separately, perhaps will be used in combination more than 2 kinds.
Phenolic resins is the material that has at least 2 phenolic hydroxyl groups in molecule, for example, can enumerate phenol novolac resin, cresols novolac resin, bisphenol-A phenolic varnish gum, poly-to vinylphenol, phenol aralkyl resin.They can use a kind separately, perhaps will be used in combination more than 2 kinds.
In resin thickener of the present invention, consider that from the viewpoint of the curable of cured film and reliability (B) thermosetting resin is preferably with epoxy resin and phenolic resins or have the compound of phenolic hydroxyl group and use in molecule.
(B) in the composition, have the use level of the compound of phenolic hydroxyl group about phenolic resins or in molecule,, be preferably 1～150 mass parts, 20～120 mass parts more preferably, and 50～100 mass parts more preferably with respect to 100 mass parts epoxy resin.
Resin thickener of the present invention is considered from the viewpoint of the curable of further raising epoxy resin, can contain epoxy resin and curing accelerator simultaneously.As curing accelerator,, just be not particularly limited as long as can be used for cured epoxy resin.As this curing accelerator, for example, can enumerate imidazoles, cyanoguanidine derivative, dicarboxyl acid dihydrazide, triphenylphosphine, tetraphenylphosphoniphenolate tetraphenyl borate salts, 2-ethyl-4-methylimidazole-tetraphenyl borate salts, 1,8-diazabicyclo (5,4,0) endecatylene-7-tetraphenyl borate salts.They can use a kind separately, perhaps will be used in combination more than 2 kinds.
(B) in the composition,,, be preferably 0.5～50 mass parts with respect to 100 mass parts epoxy resin about the use level of curing accelerator, and 1～10 mass parts more preferably.If this use level surpasses 50 mass parts, the possibility of the keeping stability decreases of resin thickener is arranged then.
In addition, as (B) thermosetting resin, can also use the imide compound that in 1 molecule, has at least 2 thermosetting imide bases.As the example of this compound, can enumerate adjacent dimaleimide benzene, a dimaleimide benzene, to dimaleimide benzene, 1,4-two (to the maleimide cumyl) benzene, 1,4-two (a maleimide cumyl) benzene etc.They can use a kind separately, perhaps will be used in combination more than 2 kinds.In addition, as imide compound, the also preferred represented imide compound of following general formula (IV)～(VI) that uses.
Figure BPA00001388895900091
Figure BPA00001388895900101
In the above-mentioned formula (IV)～(VI), X and Y represent independently of one another-O-,-CH 2-,-CF 2-,-SO 2-,-S-,-CO-,-C (CH 3) 2-or-C (CF 3) 2-, R 11, R 12, R 13, R 14, R 15, R 16, R 17And R 18Represent hydrogen atom, low alkyl group, lower alkoxy, fluorine atom, chlorine atom or bromine atoms independently of one another, D represents to have the dicarboxylic acid residue of ethene unsaturated double-bond, and p represents 0～4 integer.
About the use level of (B) thermosetting resin, with respect to 100 mass parts (A) composition, be necessary for 250～500 mass parts, be preferably 260～450 mass parts, and 260～370 mass parts more preferably.If this use level is in the scope of 250～500 mass parts, then the flexibility excellence can fully reduce the viscosity of B stage condition, and can improve the wafer shear strength when heating.
As the filler of (C) composition, for example, can enumerate conductivity (metal) fillers such as silver powder, bronze, copper powder; Inorganic substances fillers such as silicon dioxide, aluminium oxide, titanium oxide, glass, iron oxide, pottery etc.By containing (C) filler, required thixotropy in the time of can giving printing to the resin thickener.
In filler, conductivity (metal) fillers such as silver powder, bronze, copper powder can add in order to give conductivity, conductivity of heat or thixotropy to bonding agent.In addition, inorganic substances fillers such as silicon dioxide, aluminium oxide, titanium oxide, glass, iron oxide, pottery can add for bonding agent being given low heat expansion, low hydroscopicity, thixotropy.They can use a kind separately, perhaps will be used in combination more than 2 kinds.
In addition, the filler as the electric reliability that improves semiconductor device can also add inorganic ion exchanger.As inorganic ion exchanger, when in hot water, extracting the thickener solidfied material, the ion that can confirm in the aqueous solution to be extracted, for example Na +, K +, Cl -, F -, RCOO -, Br -The material of plasma seizure effect is effective.As the example of this ion exchanger, can enumerate natural minerals such as the natural zeolite of producing, zeolites, Emathlite, dolomite, hydrotalcite, artificial synthetic synthetic zeolite etc.
These electroconductive stuffings or inorganic substances filler can use a kind separately respectively, perhaps will be used in combination more than 2 kinds.In addition, in the scope of not damaging rerum natura, can also using with mixing more than a kind of inorganic substances filler more than a kind with electroconductive stuffing.
In resin thickener of the present invention, consider from the viewpoint that improves printing, further lowers viscosity, as (C) composition, preferably contain the spherical silicon dioxide particulate.
The average grain diameter of spherical silicon dioxide particulate is preferably 50nm～2000nm, 100nm～1000nm more preferably, and 200nm～800nm more preferably.
(C) use level of filler with respect to 100 mass parts (A) composition, is preferably 1～200 mass parts, 30～170 mass parts more preferably, and be preferably 60～140 mass parts especially.The use level of this filler is considered from the viewpoint of the resin thickener being given sufficient thixotropy (for example, thixotropic index: more than 1.5), is preferably more than 1 mass parts.Further, the use level of this filler, consider from the viewpoint of printing and cementability, be preferably below 200 mass parts, if and use level surpasses 200 mass parts, then the modulus of elasticity of solidfied material uprises, and the result has the stress of chip join material to relax the ability step-down, the possibility that the installation reliability of semiconductor device descends.
About the mixing of (C) filler and mixing, dispersion machine appropriate combination such as common mixer, mixing and kneading machine, three-roller, ball mill can be carried out.
As the printing ink solvent of (D) composition, preferably from can be with (C) uniform filling selecting the mixing or solvent that disperses.In addition, consider that printing the time prevents solvent evaporates, preferably selecting boiling point is solvent more than 100 ℃.By using (D) printing ink solvent, can carry out the adjustment of resin paste viscosity.
As above-mentioned printing ink solvent, for example, can enumerate the N-N-methyl-2-2-pyrrolidone N-, diethylene glycol dimethyl ether (being also referred to as diethylene glycol dimethyl ether), triethylene glycol dimethyl ether (being also referred to as triglyme), diethylene glycol diethyl ether, 2-(2-methoxy ethoxy) ethanol, gamma-butyrolacton, isophorone, carbitol, the carbitol acetic acid esters, 1,3-dimethyl-2-imidazolone, acetate 2-(2-butoxy ethyoxyl) ethyl ester, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxanes, cyclohexanone, methyl phenyl ethers anisole, in addition, can also enumerate based on solvent as the petroleum distillate of printing ink solvent.They can use a kind separately, perhaps will be used in combination more than 2 kinds.
About the use level of above-mentioned (D) printing ink solvent, preferably make the solid constituent of resin thickener become 30～90 quality %, more preferably become 35～75 quality %, and especially preferably become 40～60 quality %.If above-mentioned solid constituent is more than the 30 quality %, then the viewpoint that suppresses change of shape from reducing based on the dried volume of thickener considers it is preferred, if and it is below the 90 quality %, then consider it is preferred from the flowability of raising thickener and the viewpoint of printing operation.
In the printing of resin thickener, when significantly producing bubble, space, it is effective adding additives such as defoamer, foamicide, foam inhibitor in above-mentioned (D) printing ink solvent.Their addition presses down the viewpoint of bubble effect and considers from performance, be benchmark with the total amount of (D) printing ink solvent and additive, is preferably more than the 0.01 quality %, and considers from the viewpoint of the viscosity stability of cementability, thickener, is preferably below the 10 quality %.
In addition, in order to improve bonding force, can in the resin thickener, suitably add the homopolymers of butadiene or copolymer, silane coupler, titanium is that coupling agent, nonionic are that surfactant, fluorine are surfactant, silicon-type additive etc. with carboxylic end group.
Homopolymers or copolymer as butadiene with carboxylic end group, for example, can enumerate as on main chain, having imported the aqueous polybutadiene of low-molecular-weight of acrylonitrile and having had " Hycer CTBN-2009 * 162 ", " CTBN-1300 * 31 ", " CTBN-1300 * 8 ", " CTBN-1300 * 13 ", " CTBNX-1300 * 9 " (all being that Ube Industries, Ltd makes) of carboxylic acid group endways; As " NISSO-PB-C-2000 " (the Tso Tat Co., Ltd., Japan's manufacturing) of the aqueous polybutadiene of low-molecular-weight with carboxylic acid group etc.They can use a kind separately, perhaps will be used in combination more than 2 kinds.
The thixotropic index of resin thickener is preferably 1.0～8.0.If the thixotropic index of resin thickener is more than 1.0, the generation of hanging of the thickener that can suppress to supply with and be coated with by print process etc. is then arranged and keeps the tendency of printing shape well.Further, if this thixotropic index is below 8.0, the tendency of generation of " defective " or the scratch (カ ス レ) etc. of the thickener that can suppress to supply with and be coated with by print process is arranged then.
The viscosity of resin thickener (25 ℃) is preferably 1～1000Pas.If the viscosity of resin thickener is 1～1000Pas, then consider to be fit to from the viewpoint of printing operation.In addition, the viscosity of resin thickener, preferably suitably adjust according to the kind of print process, for example, as this situation that in mask open portion, is provided with mesh etc. such as screen printing plate, consider the passing property of mesh portion, preferably be adjusted into the scope of 1～100Pas, when being stencil etc., preferably be adjusted into the scope of 20～500Pas.In addition, when finding more remaining space in dried thickener, it is effective that viscosity is adjusted to below the 150Pas.
Above-mentioned viscosity is to use E type rotation viscometer, the numerical value when measuring under 25 ℃, revolution are the condition of 0.5rpm.Thixotropic index, be defined as and use E type rotation viscometer, numerical value when measuring under 25 ℃, revolution are the condition of 1rpm is with the ratio (thixotropic index=(viscosity under the 1rpm)/(viscosity under the 10rpm)) that at 25 ℃, revolution is the numerical value when measuring under the condition of 10rpm.
The resin paste for die bonding material of gained, can be on lead frames such as 42 alloy lead wire frames or copper lead frame by print process, perhaps polyimide resin, epoxy resin, polyimides are on the plastic films such as resin, and then base materials such as glass nonwoven fabrics dippings polyimide resin, epoxy resin, polyimides be plastics such as resin and solidify on the material of gained, perhaps supply with on the ceramic holding components such as aluminium oxide and coating, and carry out B stageization.Thus, can obtain having the support substrate of B stage bonding agent.Have on the support substrate of B stage bonding agent at this, paste semiconductor element (chip) and heating such as IC, LSI, thereby chip is engaged with support substrate.Then, by making the operation of solidifying behind the resin thickener, chip is carried on support substrate.The back curing of this resin thickener under the not in-problem situation, can be carried out when the back curing process of encapsulant in assembly process is installed together.
The manufacture method of semiconductor device of the present invention, at least comprise the resin thickener is coated on painting process that formation is filmed on the substrate and the semiconductor-chip-mounting operation of carrying semiconductor chip on this is filmed, and preferably behind painting process, further comprise dry described filming, carry out the drying process of B stageization, more specifically, comprise each above-mentioned operation.In addition, semiconductor device of the present invention is to make by the manufacture method that comprises above each operation.
Said chip engages and contains solvent with the resin thickener, but when being used for the manufacture method of semiconductor device, make most of solvent evaporates owing in drying process, carrying out B stageization, therefore the space that can assemble out in the chip join layer is few, and has the semiconductor device of good installation reliability.
On the other hand, after by print process supply and coating resin thickener, if package reliability is not had influence, then can also not carry out dry semi-solid preparation, directly paste semiconductor element, heating engages chip with support substrate then.
Therefore, the manufacture method of another kind of semiconductor device of the present invention, be included in the said chip joint resin thickener of coating ormal weight on the substrate, carry each operation of semiconductor chip on the resin thickener, another kind of semiconductor device of the present invention is to make by the manufacture method that comprises above each operation.
Herein, Fig. 1 is the pattern sectional view of a kind of execution mode of expression semiconductor device of the present invention (the memory substrate of BOC structure).In semiconductor device shown in Figure 1 100, semiconductor chips 2 such as IC chip, by by the formed bonding agent 4 of resin paste for die bonding material of the present invention, bonding with substrate 6 with solder ball 8.Herein, solder ball 8 is formed on the surface of substrate 6 on the formed circuit layer 14.In addition, on circuit layer 14, form resist layer 16.Thus, semiconductor device 100, the splicing ear with semiconductor chip 2 is electrically connected with substrate 6 by lines such as metal wire 10, and then the structure that seals by sealing resin 12.
Below, preferred implementation of the present invention is described, but the present invention is not restricted to this.
Embodiment 1
Below, based on embodiment and comparative example, the present invention is made more specific description.
(embodiment 1～3 and comparative example 1～3)
1-Methyl-2-Pyrrolidone (below, be called " NMP ") in, under nitrogen atmosphere, make diphenyl methane-4,4 '-vulcabond (1.0mol), diphenyl methane-2,4 '-vulcabond (1.0mol) and weight average molecular weight are 1000 polytetramethylene glycol (0.8mol) 100 ℃ of reactions 1 hour down, then, to wherein adding 4, the two phthalic anhydrides (1.0mol) of 4 '-oxygen, NMP (60.0mol) further stirred 3 hours down at 100 ℃.Then, add benzylalcohol (0.49mol) again, stirred 1 hour down, finish reaction at 100 ℃.The solution of gained is joined in the water of vigorous stirring, filters the sediment generated, with its in a vacuum, 80 ℃ dry 8 hours down, obtain the imide-urethane resin.Use GPC to measure the imide-urethane resin of gained, the result is with polystyrene conversion, Mw=93700, Mn=38800.In addition, the imide-urethane resin of gained is counted 40 quality % with solid component concentration be dissolved in the carbitol acetic acid esters (CA), obtain the imide-urethane resin solution.
In addition, prepare 14.1 mass parts cresols phenolic resin varnish type epoxy resin (trade names: YDCN-702S, Dongdu changes into (strain) and makes, epoxide equivalent is 200), 9.9 mass parts bisphenol-A phenolic varnish gum (trade names: VH-4170, big Japanese ink chemical industry (strain) is made, and the OH equivalent is 118) carbitol acetic acid esters (36 mass parts) solution.Further, prepare tetraphenylphosphoniphenolate tetraphenyl borate salts (trade name: TPPK respectively, Tokyo changes into industry (strain) and makes), aerosil (trade name: AEROSIL 380, Japan AEROSIL (strain) makes, block silicon dioxide microparticle) and silicon dioxide (trade name: SO-C2, Admatechs (strain) makes, the spherical silicon dioxide particulate, average grain diameter is 500nm).
With these materials, become the ratio shown in the following table 1 with the solid constituent mass ratio, join and carry out mixingly in the mixing and kneading machine, below 5Torr, carry out mixing 1 hour of deaeration then, obtain the resin paste for die bonding material of embodiment 1～3 and comparative example 1～3.In addition, what the use level of the carbitol acetic acid esters (CA) in the table 1 was represented is, in the imide-urethane resin solution, and in the carbitol acetate solution of epoxy resin and phenolic resins, as the amount of the contained carbitol acetic acid esters of solvent.
In addition, as the characteristic of this resin thickener, estimate for the adhibit quality (viscosity) behind pressing resist-coating substrate under the B stage condition.The evaluation method of adhibit quality is as described below.The resin thickener of making in embodiment and the comparative example is coated on evaluation with on the substrate, and heat drying is 1 hour in 110 ℃ baking oven, forms film (the chip join layer) of B stage condition.Estimating with substrate herein, is the substrate of going up coating solder resist AUS-308 (big Japanese ink manufacturing) at MCL-E679F substrate (Hitachi Chemical Co., Ltd.'s manufacturing).Then, on the chip join layer with the evaluation substrate of 10mm * 12mm, on 30 ℃ heat dish with 60 seconds of loading pressing of 5kgf.After the pressing it is spun upside down, whether the substrate of observing that side of pressing drops.It the results are shown in table 1.In addition, in the table 1, " A " expression pressing metacoxal plate is not pasted and situation about dropping, and " B " expression pressing metacoxal plate keeps the situation of pasting.
Further, as the characteristic of this resin thickener, pressing semiconductor chip, wafer shear strength when solidifying the heating under 250 ℃ afterwards behind the mensuration thickener.The assay method of wafer shear strength is as described below during heating.The resin thickener of making in embodiment and the comparative example is printed on the 42 alloy lead wire frames, and drying is 60 minutes in 110 ℃ baking oven.Then, on 200 ℃ heat dish, with the silicon (thickness is 0.5mm) of loading pressing 5 * 5mm in 1 second on the resin thickener of 5kgf, and heating 60 minutes in 180 ℃ baking oven, make its curing.Use automatic bonding force testing machine (trade name: serie-4000, デ イ ジ society makes), measure its shear strength (kgf/ chip) under 250 ℃.It the results are shown in table 1.
[table 1]
Figure BPA00001388895900151
*After the B stageization,, produced crackle though viscosity reduces, can't pressing.
As shown in Table 1, resin thickener of the present invention (embodiment 1～3), after B stageization, at ambient temperature, viscosity fully reduces, and compares with resin thickener (comparative example 1～3) in the past, can transport under the state of direct overlapping substrate.In addition, resin thickener of the present invention, after solidified pressing chip and back, shear strength and had high die bonding power and thermal endurance also than in the past resin thickener height during heating under 250 ℃.
Symbol description
2 is that semiconductor chip, 4 is that bonding agent, 6 is that substrate, 8 is that solder ball, 10 is that line, 12 is that sealing resin, 100 is a semiconductor device.

Claims (5)

1. resin paste for die bonding material, it contains following general formula (I) represented imide-urethane resin, thermosetting resin, filler and printing ink solvent, and the use level of described thermosetting resin is 250～500 mass parts with respect to the described imide-urethane resin of 100 mass parts
Figure FPA00001388895800011
In the formula, R 1Expression contains the divalent organic group of aromatic ring or aliphat ring, R 2The expression molecular weight is 100～10000 divalent organic group, R 3Expression contains 4 valency organic groups of 4 above carbon atoms, and n and m represent 1～100 integer independently of one another.
2. resin paste for die bonding material as claimed in claim 1, wherein said filler contains the spherical silicon dioxide particulate.
3. the manufacture method of a semiconductor device, it comprises claim 1 or 2 described resin paste for die bonding material is coated on the substrate, forms the painting process of filming; With the semiconductor-chip-mounting operation of on described filming, carrying semiconductor chip.
4. the manufacture method of semiconductor device as claimed in claim 3, behind described painting process, further comprise described filming carried out drying so that the drying process of its B stageization, and in described semiconductor-chip-mounting operation, on described the filming after the B stageization, carry semiconductor chip.
5. semiconductor device by the manufacture method gained of claim 3 or 4 described semiconductor devices.
CN2009801502835A 2008-12-17 2009-07-24 Resin paste for die bonding, method for producing semiconductor device, and semiconductor device Pending CN102246285A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008321123 2008-12-17
JP2008-321123 2008-12-17
PCT/JP2009/063283 WO2010070947A1 (en) 2008-12-17 2009-07-24 Resin paste for die bonding, method for producing semiconductor device, and semiconductor device

Publications (1)

Publication Number Publication Date
CN102246285A true CN102246285A (en) 2011-11-16

Family

ID=42268625

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801502835A Pending CN102246285A (en) 2008-12-17 2009-07-24 Resin paste for die bonding, method for producing semiconductor device, and semiconductor device

Country Status (6)

Country Link
JP (1) JPWO2010070947A1 (en)
KR (1) KR20110050561A (en)
CN (1) CN102246285A (en)
SG (1) SG172144A1 (en)
TW (1) TW201026806A (en)
WO (1) WO2010070947A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101906248B (en) * 2010-07-08 2012-06-06 浙江大学 High compression-strength rigid-enhancement type hard polyurethane foaming plastic and preparation method thereof
JP5564405B2 (en) * 2010-11-04 2014-07-30 株式会社カネカ Bonding sheet
JP5741809B2 (en) * 2011-02-22 2015-07-01 三菱マテリアル株式会社 Bonding paste and method for bonding semiconductor element and substrate
KR102012788B1 (en) 2015-09-23 2019-08-21 주식회사 엘지화학 Adhesive film, preparation method of semiconductor device, and semiconductor device
JP6388680B2 (en) * 2017-03-11 2018-09-12 日揮触媒化成株式会社 Manufacturing method of die attach paste for mounting semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006129630A1 (en) * 2005-05-31 2006-12-07 Sumitomo Bakelite Co., Ltd. Encapsulating resin composition for preapplication, semiconductor device made with the same, and process for producing the same
WO2008041646A1 (en) * 2006-10-04 2008-04-10 Hitachi Chemical Company, Ltd. Resin paste for die bonding, method for manufacturing semiconductor device, and semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4604682B2 (en) * 2004-01-08 2011-01-05 日立化成工業株式会社 Polyurethaneimide resin and adhesive composition using the same
JP2006241174A (en) * 2005-02-07 2006-09-14 Hitachi Chem Co Ltd Film-formed adhesive for die-bonding, and adhesive sheet and semi-conductor device by using the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006129630A1 (en) * 2005-05-31 2006-12-07 Sumitomo Bakelite Co., Ltd. Encapsulating resin composition for preapplication, semiconductor device made with the same, and process for producing the same
WO2008041646A1 (en) * 2006-10-04 2008-04-10 Hitachi Chemical Company, Ltd. Resin paste for die bonding, method for manufacturing semiconductor device, and semiconductor device

Also Published As

Publication number Publication date
WO2010070947A1 (en) 2010-06-24
SG172144A1 (en) 2011-07-28
KR20110050561A (en) 2011-05-13
TW201026806A (en) 2010-07-16
JPWO2010070947A1 (en) 2012-05-24

Similar Documents

Publication Publication Date Title
CN101365765B (en) Adhesive composition, filmy adhesive, adhesive sheet, and semiconductor device made with the same
KR100970312B1 (en) Resin paste for die bonding and its use
CN101523587B (en) Resin paste for die bonding, method for manufacturing semiconductor device, and semiconductor device
JP3723483B2 (en) Electronic component equipment
TWI741212B (en) Resin composition, resin film, semiconductor laminate, semiconductor laminate manufacturing method, and semiconductor device manufacturing method
US20090111925A1 (en) Thermal interface materials, methods of production and uses thereof
CN102687257A (en) Semiconductor device, method for manufacturing semiconductor device, and semiconductor wafer provided with adhesive layer
US10717806B2 (en) Packaging material and film
WO2008053590A1 (en) Liquid resin composition, semiconductor wafer with adhesive layer, semiconductor element with adhesive layer, semiconductor package, method for manufacturing semiconductor element, and method for manufacturing semiconductor package
CN102246285A (en) Resin paste for die bonding, method for producing semiconductor device, and semiconductor device
TW201009021A (en) Resin composition
JP3723461B2 (en) Electronic component equipment
TWI748126B (en) Resin composition, resin film, semiconductor laminate, semiconductor laminate manufacturing method, and semiconductor device manufacturing method
CN102272908A (en) Resin paste for die bonding, process for producing semiconductor device using the resin paste, and semiconductor device
JP2012180442A (en) Adhesive film and semiconductor apparatus having the same
JP5332183B2 (en) Adhesive composition, film adhesive, adhesive sheet and semiconductor device
TW201402747A (en) Semiconductor device and method for manufacturing semiconductor device
JP2017122159A (en) Adhesive film and method for producing the same, and adhesive composition used in the same
JP3444237B2 (en) Liquid epoxy resin composition for semiconductor encapsulation and semiconductor device
JP2008112972A (en) Resin paste for die bonding, method for manufacturing semiconductor device, and semiconductor device
JP2011159899A (en) Adhesive film for semiconductor and semiconductor device using the same
TWI534169B (en) Die bonding agent
JPH0883815A (en) Compound semiconductor device
JP2016190963A (en) Adhesive film for semiconductor, dicing tape-integrated adhesive film for semiconductor, and semiconductor device
SG182978A1 (en) Liquid resin composition, semiconductor chip with an adhesive layer, method of producing such materials, and semiconductor devices

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20111116

WD01 Invention patent application deemed withdrawn after publication