CN102237474A - White light-emitting diode (LED) - Google Patents
White light-emitting diode (LED) Download PDFInfo
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- CN102237474A CN102237474A CN2010101660621A CN201010166062A CN102237474A CN 102237474 A CN102237474 A CN 102237474A CN 2010101660621 A CN2010101660621 A CN 2010101660621A CN 201010166062 A CN201010166062 A CN 201010166062A CN 102237474 A CN102237474 A CN 102237474A
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Abstract
The invention discloses a white light-emitting diode (LED). The white LED comprises an LED chip, a cup-shaped chip base, fluorescent powder and a package material and is characterized in that: the fluorescent powder and the package material are mixed and distributed in a layered mode; the mixture of the fluorescent powder and the package material comprises scattering substances; the more than 2 layers are formed; a first layer adjacent to the chip has the scattering substance and the fluorescent powder which have low density; a second layer adjacent to the first layer has the scattering substance and the fluorescent powder which have high density; the density of the scattering substance and the fluorescent powder on a third layer is lower than that of the second layer; and the density of the scattering substance and the fluorescent powder on each of the subsequent layers becomes lower gradually. The LED emits light at high uniformity, the lighting effect is enhanced by 20 percent, the light emitting angle is wide, the appearance of the LED is similar to that of the conventional electronic fluorescent lamp, and the light ray is soft.
Description
Technical field
The present invention relates to the LED lighting technical field, relate in particular to the configuration in LED of fluorescent material and scatterer.
Background technology
Under the background that the worry of current global energy shortage raises once again, energy savings is the important problem that we shall face future, at lighting field, the application of LED luminous product is just attracting common people's sight, LED is as a kind of novel green light source product, must be developing tendency in future, it be the novel illumination light source epoch of representative that 21st century will enter with LED.
China LED industry is started in the seventies in 20th century.Through 30 years of development, Chinese LED industry has begun to take shape the encapsulation of preparation, led chip of the production that comprises the LED epitaxial wafer, led chip and the LED product comparatively integrated industrial chain in being applied in.Under the promotion of " national semiconductor lighting engineering ", formed seven in Shanghai, Dalian, Nanchang, Xiamen, Shenzhen, Yangzhou and Shijiazhuang national semiconductor lighting engineering industry base.The Yangtze River Delta, Pearl River Delta, Fujian triangle and northern area then become the gathering ground of Chinese LED industry development.
At present, Chinese semiconductor lighting industry development is become better, and the development of extension chip enterprise is especially rapid, the encapsulation scope of the enterprise continues to continue to increase rapidly, the application of throwing light on obtains bigger progress.The Chinese LED application product output value surpassed 30,000,000,000 yuan in 2007, had become application product production and exported countrys the biggest in the world such as LED full color display, solar LED, Landscape Lighting, and emerging semiconductor lighting industry forms.Domesticly formed certain characteristic at lighting field, wherein outdoor lighting is with fastest developing speed, and existing last hundred tame LED enterprises have also built tens model paths, but still shows backwardness aspect the indoor universal illumination market.
White light LEDs is because its color rendering color rendering and light naturalness enjoy favor well, and white light LEDs generally adopts two kinds of methods to form.First kind is to utilize " blue light technology " to cooperate with fluorescent material to form white light; Second kind is multiple monochromatic light mixed method.These two kinds of methods all can successfully produce white light parts.The system that first method produces white light excites chip light emitting and fluorescent material to be packaged together, and when fluorescent material is subjected to send after blue-light excited Chip Packaging that the white light second method adopts different color light together, mixes producing white light by each coloured light.
Second method complex structure cost height; Now generally adopt first method, it is that phosphor powder layer is set above Lamp cup that traditional LED white light transforms, or phosphor powder layer is close to the chip coating.
The tradition transform mode is poor efficiency, and the light that part is sent reenters led chip, thereby and the radiant energy of loss from stoke shift further improve chip temperature. reduce illumination effect greatly.
Summary of the invention
The technical problem to be solved in the present invention is to obtain equal white light with low energy consumption; Minimizing improves chip light emitting efficient because of the stoke shift radiation reduces chip temperature.
White light LEDs technical scheme of the present invention is that white light LEDs comprises led chip, cup-shaped chip pad, fluorescent material and encapsulating material, it is characterized in that fluorescent material mixes and layered arrangement with encapsulating material.
Fluorescent material of the present invention with also contain scatterer during encapsulating material mixes, can so that chip emission light in encapsulating material repeatedly excitated fluorescent powder improve conversion ratio, the conversion of light and scattering all can adapt to the actual product application need from without on the aspect, be excited on the different angles, obtain equal white light.
The present invention for ground floor on has density little scatterer and fluorescent material greater than 2 next-door neighbours on the chips in described number of plies amount, cause and on the encapsulating material surface, inspire light quite uniformly, wherein contain a large amount of blue lights and first light that is converted, the second layer is right after ground floor, scatterer and fluorescent material that maximal density is arranged, the 3rd layer of scatterer and phosphor's density are little than the second layer, and each layer scatterer and phosphor's density diminish gradually afterwards.Big more from the chip distance, the possibility of the change of team is just more little, because the fluorescent material particulate of upper strata material is less.
Scatterer and phosphor's density ratio are that each layer scatterer and phosphor's density are half and successively decrease after 1: 4 second layer on ground floor of the present invention and the second layer.
The mass ratio of ground floor encapsulating material of the present invention, scatterer, fluorescent material is 100: 4: 1.
Scatterer of the present invention is nanometer Al
2O
3, SiO
2With the CaO particle. described fluorescent material is that this area fluorescent material commonly used is joined type according to led chip and selected for use.
Led chip of the present invention is a GaN base chip.GaN is the compound of stabilizer pole, is again hard materials with high melting point, and fusing point is about 1700 ℃, and GaN has high degree of ionization, is the highest (0.5 or 0.43) in III-V compounds of group.Under atmospheric pressure, the GaN crystal generally is a hexagonal wurtzite structure.It has 4 atoms in no born of the same parents, atomic volume is approximately half of GaAs.Because its hardness height is again a kind of good coating protection material.
Encapsulating material of the present invention is epoxy resin or organosilicon.
Beneficial effect of the present invention:
(1) exactly because the scatterer of light inside and transformational substance distribute with laminar in three dimensions, and material density progressively reduces from lower to upper between layer and the layer, adds the reflex of radiant light, guarantees that light sends highly uniform light.
(2) compare with the encapsulation technology of traditional " transformational substance is too pressed close to chip ", this new technology can improve 20% light efficiency.
(3) overlook (15 ° to-15 °) from top to bottom, present light and progressively weaken, maximum intensity only is between 25 ° to 45 °, and the maximum angle of light is no more than 180 °.
(4) light in one's power the zone be in one's power several times of common LED encapsulation technology, so light obviously increases for people's comfort level in the technology of the present invention, dazzling light also significantly reduces.
(5) the multilayer encapsulation can make LED overall dimension reach several centimetres, causes to produce the surface LED bulb similar to the CFL electricity-saving lamp.
Embodiment
Implementation column 1
Epoxy resin, nanometer Al
2O
3, fluorescent material mass ratio be to mix the Lamp cup be coated on GaN chip at 100: 4: 1, obtain the ground floor conversion coating, next-door neighbour's second layer: the mass ratio of encapsulating material, scatterer, fluorescent material is 25: 4: 1; The 3rd layer: the mass ratio of encapsulating material, scatterer, fluorescent material is 50: 4: 1; Bed thickness 0.3cm, encapsulation is fixing, obtains the LED lamp.
Implementation column 2
Epoxy resin, nanometer SiO
2, fluorescent material mass ratio be to mix the Lamp cup be coated on GaN chip at 100: 4: 1, obtain the ground floor conversion coating, next-door neighbour's second layer: the mass ratio of encapsulating material, scatterer, fluorescent material is 25: 4: 1; The 3rd layer: the mass ratio of encapsulating material, scatterer, fluorescent material is 50: 4: 1; Bed thickness 0.4cm, encapsulation is fixing, obtains the LED lamp.
Implementation column 3
The mass ratio of epoxy resin, nanometer CaO, fluorescent material is to mix the Lamp cup be coated on GaN chip at 100: 4: 1, obtains the ground floor conversion coating, and next-door neighbour's second layer: the mass ratio of encapsulating material, scatterer, fluorescent material is 25: 4: 1; The 3rd layer: the mass ratio of encapsulating material, scatterer, fluorescent material is 50: 4: 1; Bed thickness 0.5cm, encapsulation is fixing, obtains the LED lamp.
Implementation column 4
Organosilicon, nanometer Al
2O
3, fluorescent material mass ratio be to mix the Lamp cup be coated on GaN chip at 100: 4: 1, obtain the ground floor conversion coating, next-door neighbour's second layer: the mass ratio of encapsulating material, scatterer, fluorescent material is 25: 4: 1; The 3rd layer: the mass ratio of encapsulating material, scatterer, fluorescent material is 50: 4: 1; Bed thickness 0.7cm, encapsulation is fixing, obtains the LED lamp.
Implementation column 5
Organosilicon, nanometer SiO
2, fluorescent material mass ratio be to mix the Lamp cup be coated on GaN chip at 100: 4: 1, obtain the ground floor conversion coating, next-door neighbour's second layer: the mass ratio of encapsulating material, scatterer, fluorescent material is 25: 4: 1; The 3rd layer: the mass ratio of encapsulating material, scatterer, fluorescent material is 50: 4: 1; Bed thickness 0.8cm, encapsulation is fixing, obtains the LED lamp.
Implementation column 6
The mass ratio of organosilicon, nanometer CaO, fluorescent material is to mix the Lamp cup be coated on GaN chip at 100: 4: 1, obtains the ground floor conversion coating, and next-door neighbour's second layer: the mass ratio of encapsulating material, scatterer, fluorescent material is 25: 4: 1; The 3rd layer: the mass ratio of encapsulating material, scatterer, fluorescent material is 50: 4: 1; Bed thickness 1.0cm, encapsulation is fixing, obtains the LED lamp.
Claims (10)
1. a white light LEDs comprises led chip, cup-shaped chip pad, fluorescent material and encapsulating material, it is characterized in that fluorescent material mixes and layered arrangement with encapsulating material.
2. white light LEDs as claimed in claim 1 also contains scatterer in it is characterized in that described fluorescent material and encapsulating material mixing.
3. white light LEDs as claimed in claim 2 is characterized in that described number of plies amount greater than 2, and described layer thickness is 0.3-1.0cm.
4. white light LEDs as claimed in claim 3, it is characterized in that being close to little scatterer of density and fluorescent material are arranged on the ground floor on the chip, the second layer is right after ground floor, scatterer and fluorescent material that maximal density is arranged, the 3rd layer of scatterer and phosphor's density are little than the second layer, and each layer scatterer and phosphor's density diminish gradually afterwards.
5. white light LEDs as claimed in claim 4 is characterized in that scatterer and phosphor's density ratio are 1: 4 on described ground floor and the second layer.
6. white light LEDs as claimed in claim 5, it is characterized in that each layer scatterer and phosphor's density are half after the described second layer successively decreases.
7. white light LEDs as claimed in claim 6, the mass ratio that it is characterized in that described ground floor encapsulating material, scatterer, fluorescent material is 100: 4: 1.
8. white light LEDs as claimed in claim 7 is characterized in that described scatterer is for being nanometer Al2O3, SiO2 and CaO particle.
9. as the described white light LEDs of claim 1-8, it is characterized in that described led chip is a GaN base chip.
10. as the described white light LEDs of claim 1-8, it is characterized in that described encapsulating material is epoxy resin or organosilicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101660621A CN102237474A (en) | 2010-05-07 | 2010-05-07 | White light-emitting diode (LED) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101660621A CN102237474A (en) | 2010-05-07 | 2010-05-07 | White light-emitting diode (LED) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102237474A true CN102237474A (en) | 2011-11-09 |
Family
ID=44887908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101660621A Pending CN102237474A (en) | 2010-05-07 | 2010-05-07 | White light-emitting diode (LED) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102237474A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103219453A (en) * | 2013-04-03 | 2013-07-24 | 杭州杭科光电股份有限公司 | Low-attenuation light emitting diode (LED) |
| US9075293B2 (en) | 2011-12-04 | 2015-07-07 | Appotronics Corporation Limited | Illumination device, projecting device and lighting device |
| CN106784256A (en) * | 2017-02-22 | 2017-05-31 | 广州硅能照明有限公司 | The COB method for packing and its structure of a kind of improving extraction efficiency |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004179644A (en) * | 2002-11-12 | 2004-06-24 | Nichia Chem Ind Ltd | Phosphor lamination and light source using the same |
| WO2005067068A1 (en) * | 2004-01-02 | 2005-07-21 | Mediana Electronics Co., Ltd. | White led device comprising dual-mold and manufacturing method for the same |
| CN101369614A (en) * | 2007-08-17 | 2009-02-18 | 刘胜 | Packaging structure and method for high power white light LED |
| US20090065791A1 (en) * | 2007-09-06 | 2009-03-12 | Jui-Kang Yen | White light led with multiple encapsulation layers |
| EP2270884A1 (en) * | 2009-06-30 | 2011-01-05 | Acpa Energy Conversion Devices Co.,Ltd. | Wavelength conversion device for LED's or solar cells |
-
2010
- 2010-05-07 CN CN2010101660621A patent/CN102237474A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004179644A (en) * | 2002-11-12 | 2004-06-24 | Nichia Chem Ind Ltd | Phosphor lamination and light source using the same |
| WO2005067068A1 (en) * | 2004-01-02 | 2005-07-21 | Mediana Electronics Co., Ltd. | White led device comprising dual-mold and manufacturing method for the same |
| CN101369614A (en) * | 2007-08-17 | 2009-02-18 | 刘胜 | Packaging structure and method for high power white light LED |
| US20090065791A1 (en) * | 2007-09-06 | 2009-03-12 | Jui-Kang Yen | White light led with multiple encapsulation layers |
| EP2270884A1 (en) * | 2009-06-30 | 2011-01-05 | Acpa Energy Conversion Devices Co.,Ltd. | Wavelength conversion device for LED's or solar cells |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9075293B2 (en) | 2011-12-04 | 2015-07-07 | Appotronics Corporation Limited | Illumination device, projecting device and lighting device |
| CN103219453A (en) * | 2013-04-03 | 2013-07-24 | 杭州杭科光电股份有限公司 | Low-attenuation light emitting diode (LED) |
| CN106784256A (en) * | 2017-02-22 | 2017-05-31 | 广州硅能照明有限公司 | The COB method for packing and its structure of a kind of improving extraction efficiency |
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Application publication date: 20111109 |