CN102237463B - 发光器件及其制造方法、发光器件封装以及发光系统 - Google Patents

发光器件及其制造方法、发光器件封装以及发光系统 Download PDF

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Publication number
CN102237463B
CN102237463B CN201110108213.2A CN201110108213A CN102237463B CN 102237463 B CN102237463 B CN 102237463B CN 201110108213 A CN201110108213 A CN 201110108213A CN 102237463 B CN102237463 B CN 102237463B
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China
Prior art keywords
layer
light emitting
light
semiconductor layer
conductive semiconductor
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Expired - Fee Related
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CN201110108213.2A
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English (en)
Chinese (zh)
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CN102237463A (zh
Inventor
金鲜京
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
CN201110108213.2A 2010-04-23 2011-04-25 发光器件及其制造方法、发光器件封装以及发光系统 Expired - Fee Related CN102237463B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0037944 2010-04-23
KR1020100037944A KR101064020B1 (ko) 2010-04-23 2010-04-23 발광 소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
CN102237463A CN102237463A (zh) 2011-11-09
CN102237463B true CN102237463B (zh) 2016-01-27

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Country Status (6)

Country Link
US (1) US8624283B2 (https=)
EP (1) EP2381490B1 (https=)
JP (1) JP5788210B2 (https=)
KR (1) KR101064020B1 (https=)
CN (1) CN102237463B (https=)
TW (1) TWI513042B (https=)

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US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
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US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
US9847372B2 (en) * 2011-12-01 2017-12-19 Micron Technology, Inc. Solid state transducer devices with separately controlled regions, and associated systems and methods
US9269876B2 (en) 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
US9437783B2 (en) * 2012-05-08 2016-09-06 Cree, Inc. Light emitting diode (LED) contact structures and process for fabricating the same
US9450152B2 (en) 2012-05-29 2016-09-20 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
US10145026B2 (en) 2012-06-04 2018-12-04 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
US9275912B1 (en) 2012-08-30 2016-03-01 Soraa, Inc. Method for quantification of extended defects in gallium-containing nitride crystals
US9299555B1 (en) 2012-09-28 2016-03-29 Soraa, Inc. Ultrapure mineralizers and methods for nitride crystal growth
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US8802471B1 (en) 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9761763B2 (en) 2012-12-21 2017-09-12 Soraa, Inc. Dense-luminescent-materials-coated violet LEDs
TWD156894S (zh) * 2013-02-08 2013-11-01 旭明光電股份有限公司 發光二極體晶片
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
KR102098323B1 (ko) * 2013-09-17 2020-05-26 엘지이노텍 주식회사 발광소자
CN104851947B (zh) * 2015-04-21 2017-11-14 北京邮电大学 一种带有表面糙化透光结构的led芯片及其制作方法
KR102363290B1 (ko) * 2016-06-13 2022-02-16 삼성디스플레이 주식회사 광학 터치 필름, 이를 포함하는 표시 장치 및 그 제조 방법
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
WO2021162727A1 (en) 2020-02-11 2021-08-19 SLT Technologies, Inc Improved group iii nitride substrate, method of making, and method of use
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
FR3115930B1 (fr) * 2020-10-29 2024-03-22 Commissariat Energie Atomique Diode électroluminescente à structure de contact tridimensionnelle, écran d’affichage et procédé de fabrication associé

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TW200701526A (en) * 2005-04-07 2007-01-01 Samsung Electro Mech Vertical group iii-nitride light emitting device and method for manufacturing the same
CN101026212A (zh) * 2006-02-24 2007-08-29 三星电机株式会社 氮化物基半导体发光器件及其制造方法
CN101593805A (zh) * 2006-11-22 2009-12-02 夏普株式会社 氮化物半导体发光器件

Also Published As

Publication number Publication date
EP2381490A2 (en) 2011-10-26
CN102237463A (zh) 2011-11-09
EP2381490B1 (en) 2017-07-05
JP5788210B2 (ja) 2015-09-30
TWI513042B (zh) 2015-12-11
US8624283B2 (en) 2014-01-07
US20110260189A1 (en) 2011-10-27
JP2011233897A (ja) 2011-11-17
KR101064020B1 (ko) 2011-09-08
EP2381490A3 (en) 2014-10-15
TW201214765A (en) 2012-04-01

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C06 Publication
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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
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Effective date of registration: 20210816

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

TR01 Transfer of patent right
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160127