CN102236228A - 液晶显示装置及其制造方法 - Google Patents
液晶显示装置及其制造方法 Download PDFInfo
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Abstract
一种液晶显示装置,包括阵列基板、相对基板以及在所述阵列基板和所述相对基板之间的液晶层。所述阵列基板包括:在第一基板上彼此交叉以限定像素区域的栅极线和数据线;与所述栅极线平行的公共线;从所述公共线延伸的第一和第二公共线图案,其中所述数据线位于所述第一和第二公共线图案之间;连接到所述栅极线和数据线的薄膜晶体管;连接到所述薄膜晶体管并位于所述像素区域的像素电极;以及在所述栅极线、公共线以及第一和第二公共线图案下面的无机黑矩阵,其中位于所述第一和第二公共线图案下面的所述无机黑矩阵屏蔽所述数据线。所述相对基板包括在第二基板上的公共电极。
Description
本发明要求2010年5月4日于韩国申请的韩国专利申请10-2010-004218的优先权,通过参考将其全部内容结合于此。
技术领域
本发明涉及一种液晶显示装置,并且更特别地,涉及一种液晶显示装置及其制造方法。
背景技术
直到最近,显示装置还通常使用阴极射线管(CRT)。目前,进行了很多努力和研究来研发诸如液晶显示(LCD)装置、等离子显示面板(PDP)、场发射显示器和电致发光显示器(ELD)等不同类型的平板显示器作为CRT的替代品。在这些平板显示器中,LCD装置具有诸如高分辨率、轻质量、薄厚度、紧凑尺寸和低的电源电压等许多优点。
通常,LCD装置包括两个基板,这两个基板间隔开并彼此相对,在两个基板之间有液晶材料。这两个基板包括彼此相对的电极以便在施加电压时在电极之间产生横跨液晶材料的电场。液晶材料中的液晶分子的取向根据感应电场的强度改变到感应电场的方向,从而改变LCD装置的光透射率。因此,LCD装置通过改变感应电场的强度显示图象。
图1是现有技术的LCD装置的横截面图。
参照图1,LCD装置包括液晶面板10和该液晶面板下方的背光,该液晶面板10包括阵列基板、滤色器基板以及在阵列基板和滤色器基板之间的液晶层50。
阵列基板包括在第一基板1上彼此交叉以限定像素区域P的栅极线(未示出)和数据线4。薄膜晶体管Tr形成在靠近栅极线和数据线4的交叉部分的开关区域TrA中。像素电极24形成在显示区域AA中以充分地显示图象并连接到薄膜晶体管Tr。
薄膜晶体管Tr包括栅极电极11、栅极绝缘层13、半导体层15以及源极电极17和漏极电极19。
钝化层21形成在具有薄膜晶体管Tr的第一基板1上,而像素电极24形成在钝化层21上并连接到漏极电极19。
滤色器基板包括在第二基板2上由黑色树脂制成的黑矩阵32。黑矩阵32屏蔽诸如栅极线、数据线4和薄膜晶体管等非显示元件并暴露像素电极24。
红(R)、绿(G)和蓝(B)滤色器34对应于黑矩阵32的各个开口形成。公共电极36形成在滤色器34和黑矩阵32上。
在LCD装置中,电场的非正态分布发生在由电极和线造成的台阶部分的周围,这将导致液晶分子的非正常操作。因此,在台阶部分周围发生漏光。
黑矩阵32位于非正常操作的液晶分子所在的区域,例如,位于栅极线和数据线4所在的区域,以防止漏光。
此外,黑矩阵32延伸以便黑矩阵32覆盖数据线4及数据线4两侧处的像素电极24部分。
例如,黑矩阵32被构造成具有VAC(视角干扰)边界D以防止VAC缺陷,该VAC缺陷是指根据观察者穿过数据线4和像素电极24之间的分开区域的视角可见到漏光。然而,在这种情况下,孔径比降低。
为了解决这些问题,提出图2所示的结构。参照图2,与像素电极重叠以形成储能电容的公共线6形成在数据线4下方。这种结构起到阻挡穿过数据线4和像素电极24之间的分开区域的漏光的作用,因而防止了VAC缺陷。在这种情况下,黑矩阵32不需要VAC边界(图1中的D),因而提高了孔径比。
然而,在图2的装置中,由于公共线6在数据线4的下方,公共线6和数据线4与作为电介质的栅极绝缘层13形成寄生电容。该寄生电容起电阻器的作用并导致信号延迟和电流消耗增加。因此,可靠性降低,并导致数据线断开。
发明内容
因此,本发明的目的是提供一种液晶显示装置及其制造方法,基本上消除了由现有技术的限制和缺点导致的一个或多个问题。
本发明的优点是提供一种能够提高孔径比和亮度的液晶显示装置及其制造方法。
本发明的附加特征和优点将在下面描述中公开,并且一部分根据描述将是明显的,或者通过实施本发明是可被认识的。本发明的这些和其他优点将能通过这里的书面说明及其权利要求以及说明书附图特别指出的结构认识到和获得。
为了实现这些和其他优点并根据本发明的目的,如同这里所具体表达和广泛描述的,液晶显示装置包括:阵列基板、相对基板以及在该阵列基板和该相对基板之间的液晶层。该阵列基板包括:在第一基板上彼此交叉以限定像素区域的栅极线和数据线,与栅极线平行的公共线,从该公共线延伸的第一和第二公共线图案,其中数据线在第一和第二公共线图案之间,连接到栅极线和数据线的薄膜晶体管,连接到薄膜晶体管并位于像素区域的像素电极,以及位于栅极线、公共线、第一和第二公共线图案下方的无机黑矩阵,其中位于第一和第二公共线图案下方的无机黑矩阵屏蔽数据线。该相对基板包括在第二基板上的公共电极。
另一方面,制造液晶显示装置的方法包括:在第一基板上形成无机黑矩阵,以及在该无机黑矩阵上的栅极线、栅极电极、公共线以及第一和第二公共线图案;在栅极线、栅极电极、公共线以及第一和第二公共线图案上形成栅极绝缘层;在栅极绝缘层上形成有源层、欧姆接触层、数据线以及源极电极和漏极电极,其中数据线在第一和第二公共线图案之间并位于无机黑矩阵上方,并且和与其交叉的栅极线限定像素区域;在源极电极和漏极电极上形成钝化层;在钝化层上形成连接到漏极电极的像素电极。
应该理解的是上述的一般描述和下述的详细描述都是示范性的和说明性的,并且打算提供对所要求的本发明的进一步解释。
附图说明
附图,其被包括来提供对本发明的进一步理解并且被结合到本说明书中且构成本说明书的一部分,说明本发明的实施例并且与说明书一起来解释本发明的原理。
在附图中:
图1是表示现有技术的LCD装置的横截面图;
图2是表示现有技术的具有防止VAC缺陷的结构的LCD装置的横截面图;
图3是表示根据本发明实施例的LCD装置的平面图;
图4是沿着图3中的IV-IV线的横截面图;以及
图5A-5I是表示制造根据本发明实施例的LCD装置的阵列基板的方法的横截面图。
具体实施方式
下面,将更详细地描述本发明的例示性实施例,这些实施例被图解在附图中。
图3是根据本发明实施例的LCD装置的平面图,而图4是沿图3中的IV-IV线的横截面图。
参照图3和4,LCD装置100包括阵列基板、滤色器基板和该阵列基板和该滤色器基板之间的液晶层150。
在阵列基板中,栅极线102和数据线104形成在第一基板上并彼此交叉以限定像素区域P。薄膜晶体管Tr形成在栅极线102和数据线104的交叉部分。薄膜晶体管Tr包括栅极电极111、栅极绝缘层113,、半导体层115以及源极电极117和漏极电极119。
像素电极124形成在像素区域P中,并通过漏极接触孔123连接到薄膜晶体管Tr的漏极电极119。
公共线103以及第一和第二公共线图案106a和106b形成在第一基板101上。公共线103与栅极线102间隔开并与之平行。第一和第二公共线图案106a和106b从公共线103延伸,与数据线104平行且位于数据线104的两侧。
彼此重叠的公共线103和像素电极124分别起到第一存储电极和第二存储电极的作用,形成第一存储电容StgC1。彼此重叠的第一及第二公共线图案106a和106b的每一个和像素电极124分别起到第三存储电极和第四存储电极的作用,形成第二存储电容StgC2。
无机材料制成的无机黑矩阵200形成在栅极线102、数据线104、栅极电极111、公共线103以及第一和第二公共线图案106a和106b下方。
无机黑矩阵200阻挡光穿过数据线104和像素电极124之间的区域。于是可以防止VAC(视角干扰)缺陷。
因此,滤色器基板中的黑矩阵132不需要VAC边界。结果就是能够提高孔径比。
此外,由于无机黑矩阵200形成在数据线104下方,因而不需要对于现有技术所描述的公共电极来防止漏光。这就防止了在数据线104和公共线103之间产生寄生电容。因此,能够防止现有技术中的信号延迟和电流消耗增加。
参照图4,限定形成薄膜晶体管Tr的开关区域TrA和显示图象的显示区域AA。
栅极电极111形成在第一基板101上的开关区域TrA中并从栅极线102延伸。公共线103可位于显示区域AA。
第一和第二公共线图案106a和106b位于像素区域P的最外侧部分并与数据线104平行。
栅极线102、栅极电极111、公共线103、以及第一和第二公共线图案106a和106b可由低电阻材料形成,例如,可由钼(Mo)、铝(Al)、铝合金(例如,AlNd)、铜(Cu)或铜合金形成。
位于第一和第二公共线图案106a和106b下面下方的无机黑矩阵200可对应于在数据线104两侧的第一和第二公共线图案106a和106b之间的区域定位。
无机黑矩阵200起防止穿过数据线104和像素电极124之间的区域的漏光的作用。更详细地,无机黑矩阵200可具有包围显示区域AA的周边部分的形状。
换句话说,无机黑矩阵200对应于栅极线102、薄膜晶体管Tr、数据线104、第一和第二公共线图案106a和106b、以及在数据线104两侧的第一和第二公共线图案106a和106b之间的区域。
栅极绝缘层113形成在栅极线102、公共线103以及第一和第二公共线图案106a和106b上。
半导体层115以及源极电极117和漏极电极119形成在栅极电极111上方的栅极绝缘层113上。数据线104形成在栅极绝缘层113上。
半导体层115包括由本征非晶硅制成的有源层115a和由非本征非晶硅制成的欧姆接触层115b。
栅极电极111、栅极绝缘层113、半导体层115以及源极电极117和漏极电极119形成薄膜晶体管Tr。
像素电极124在第一和第二公共线图案106a和106b上方延伸并与其重叠,以便和它们之间的作为电介质的栅极绝缘层113形成第二存储电容StgC2。
数据线104位于相邻像素区域P之间的边界区域。换句话说,数据线104位于第一和第二公共线图案106a和106b之间,并在第一和第二公共线图案106a和106b之间的无机黑矩阵200上方。
分别与有源层115a和欧姆接触层115b的材料相同的本征非晶硅图案和非本征非晶硅图案形成在数据线104下方。可替换地,本征非晶硅图案和非本征非晶硅图案可以省略。
钝化层121形成在数据线104以及源极电极117和漏极电极119上。钝化层121可由无机绝缘材料制成。
像素电极124形成在钝化层121上,并通过钝化层121中的漏极接触孔123接触漏极电极119。
由有机黑树脂制成的黑矩阵132形成在第二基板102上。黑矩阵132具有网格形状以屏蔽阵列基板的诸如栅极线102、数据线104和薄膜晶体管Tr的非显示元件并暴露像素电极124。黑矩阵132可以称作树脂黑矩阵。
红(R)、绿(G)、蓝(B)滤色器134分别填充树脂黑矩阵132的开口。公共电极136形成在树脂黑矩阵132和滤色器134上。
如上所述,无机黑矩阵200形成在第一和第二公共线图案106a和106b下方,而数据线104对应于第一和第二公共线图案106a和106b之间的区域形成在无机黑矩阵200的上方。于是能够防止VAC缺陷。
因此,树脂黑矩阵132不需要具有现有技术的VAC边界。结果就是能够提高孔径比。
此外,由于无机黑矩阵200形成在数据线104下方,因而不需要对于现有技术所描述的公共电极来防止漏光。这就防止了在数据线104和公共线103之间产生寄生电容。因此,可以防止现有技术中的信号延迟和电流消耗增加。
无机黑矩阵200可由选自包含锗(Ge)、碳化锗(GeC)和硅化锗(GeSi)的锗组中的一种材料制成。
无机黑矩阵200在厚度上可比黑树脂制成的黑矩阵薄。这样就能够防止由于台阶部分导致的摩擦缺陷。更详细地,在使用黑树脂制成的黑矩阵的情况下,因为黑树脂制成的黑矩阵形成得相对较厚,所以导致台阶部分,这样就导致了摩擦缺陷。
黑树脂制成的黑矩阵由于下述原因需要形成得相对较厚。黑矩阵应该具有一定的光密度(OD),光密度由下式(1)表示:OD=-log(Iout/Iin)(其中Iin是入射光量,而Iout是出射光量)。
黑矩阵应该具有大约4.0或更大的光量,并且更优选为具有大约5.0或更大的光量,以便通过抑制颜色混合来提高对比度,并防止由于漏光导致的薄膜晶体管Tr的非正常操作。
然而,黑树脂制成的黑矩阵应该具有大约1μm到大约2μm的厚度以具有4.0或更大的光密度。因此,在黑树脂制成的黑矩阵形成在阵列基板中的情况下,将形成相对大的台阶部分并且将导致摩擦缺陷。此外,额外需要平坦化处理来防止摩擦缺陷。
在本实施例的具有无机黑矩阵200情况下,虽然无机黑矩阵200具有大约到大约的厚度,无机黑矩阵200也具有大约4.0或更大的光密度。优选地,无机黑矩阵具有大约的厚度。因此,和黑树脂制成的黑矩阵相比,无机黑矩阵200能够相对薄地形成以具有同样的光密度。无机黑矩阵200在大约500nm的波长下具有大约5.3的光密度。
上述无机黑矩阵200形成在阵列基板中,并且起到防止像素电极124与线102和104中的每个之间的漏光的作用。于是能够防止VAC缺陷,并且也不需要VAC边界。因此,能够提高孔径比。
此外,无机黑矩阵200可以具有大约E+15Ωcm或更高的电阻率。因此,虽然无机黑矩阵200形成在数据线104下方,在数据线104和无机黑矩阵200之间也不产生寄生电容。因此,能够防止由于寄生电容导致的信号延迟和电流消耗增加。
虽然附图中没有示出,栅极电极111下方的无机黑矩阵200也可以形成为具有大于半导体层115的尺寸的尺寸,以便防止光入射到半导体层115上。在这种情况下,可以省略树脂黑矩阵132。
形成无机黑矩阵200可以不使用额外的光掩模。
参照图5A至5I说明制造本实施例的LCD装置的阵列基板的方法。
图5A-5I是说明制造根据本发明实施例的LCD装置的阵列基板的方法的横截面图。
参照图5A,在基板101上相继形成由无机材料制成的黑矩阵层210和由低电阻材料制成的第一金属层220。
无机材料可选自包含锗(Ge)、碳化锗(GeC)和硅化锗(GeSi)的锗组。用于第一金属层的材料可以是钼(Mo)、铝(Al)、铝合金(例如,AlNd)、铜(Cu)或铜合金。
参照图5B,在第一金属层220上形成光刻胶层(未示出),并将光掩模300放置在该光刻胶上方。然后,执行曝光。光掩模300包括透射部分(TmA)、阻挡部分(BkA)和半透射部分(HTmA),该半透射部分(HTmA)具有高于阻挡部分(BkA)的透射率并低于透射部分(TmA)的透射率的透射率。
阻挡部分(BkA)对应于形成栅极电极(图4中的111)、第一和第二公共线图案(图4中的106a和106b)、栅极线(图3中的102)和公共线(图3中的103)的区域。半透射部分(HTmA)对应于栅极电极111两侧的区域、第一和第二公共线图案106a和106b之间的区域以及第一和第二公共线图案106a和106b外侧的区域。透射部分(TmA)可对应于除了对应于阻挡部分(BkA)和半透射部分(HTmA)的区域之外的区域。
显影曝光的光刻胶层,以形成分别对应于阻挡部分(BkA)和半透射部分(HTmA)的第一和第二光刻胶图案P1和P2。对应于透射部分(TmA)的光刻胶层被除去,以便暴露在其下方的第一金属层220。第二光刻胶图案P2具有小于第一光刻胶图案P1的第一厚度的第二厚度。
参照图5C,利用第一和第二光刻胶图案P1和P2作为蚀刻掩模,通过蚀刻处理除去第一金属层220和黑矩阵层210。于是,形成金属图案220a和在其下方的无机黑矩阵200。
参照图5D,执行灰化处理以除去第二光刻胶图案P2。在该灰化处理中,减小第一光刻胶图案P1的厚度。
参照图5E,利用第二光刻胶图案P2作为蚀刻掩模,通过蚀刻处理除去金属图案220a。于是在无机黑矩阵200上方形成了栅极电极111以及第一和第二公共线图案106a和106b。
如上所述,无机黑矩阵200在形成栅极电极111以及第一和第二公共线图案106a和106b的掩模处理中形成。因此,不需要额外的掩模处理来形成无机黑矩阵200。
虽然没有详细描述,在上述掩模处理中形成栅极线102和公共线103。
参照图5F,在具有栅极电极111以及第一和第二公共线图案106a和106b的基板101上形成栅极绝缘层113。栅极绝缘层113可由无机绝缘材料形成,例如,可由氧化硅(SiO2)或氮化硅(SiNx)形成。
参照图5G,在栅极绝缘层113上相继形成本征非晶硅层(未示出)、非本征非晶硅层(未示出)以及第二金属层(未示出),然后执行掩模处理。掩模处理可包括在第二金属层上形成光刻胶层、曝光、显影、蚀刻和剥离等。通过掩模处理,形成数据线104以及源极电极117和漏极电极119。数据线104和与其交叉的栅极线102限定像素区域P。
干蚀刻暴露在源极电极117和漏极电极119之间的非本征非晶硅层以形成欧姆接触层115b。在掩模处理中,在欧姆接触层115b下方形成本征非晶硅层制成的有源层115a。于是形成了包括有源层115a和欧姆接触层115b的半导体层115。
栅极电极111、栅极绝缘层113、半导体层115以及源极电极117和漏极电极119在开关区域TrA中形成薄膜晶体管Tr。
参照图5H,在具有源极电极117和漏极电极119以及数据线104的基板101上形成钝化层121。图案化钝化层121以形成暴露漏极电极119的漏极接触孔123。钝化层123可由无机绝缘材料或有机绝缘材料制成,无机绝缘材料是例如氧化硅(SiO2)或氮化硅(SiNx),而有机绝缘材料是例如苯并环丁烯(BCB)或光丙烯酸。
参照图5I,在钝化层123上形成透明导电材料层(未示出)。透明导电材料可以是氧化铟锡(ITO)、氧化铟锌(IZO)或氧化铟锡锌(ITZO)。
图案化透明导电层以在像素区域P中形成像素电极124,像素电极124通过漏极接触孔123接触漏极电极119。
通过上述各种处理,制造了阵列基板。将阵列基板和例如滤色器基板的相对基板相结合,液晶层(图4中的150)在阵列基板和相对基板之间,这样就制造了LCD装置。
对于本领域技术人员来说明显的是在不脱离本发明的精神和范围下,可以对本发明作出各种改进和变化。因此,本发明打算覆盖本发明所提供的落在附加的权利要求及其等价物的范围内的改进和变化。
Claims (10)
1.一种液晶显示装置,包括:
阵列基板,所述阵列基板包括:
在第一基板上彼此交叉以限定像素区域的栅极线和数据线;
与所述栅极线平行的公共线;
从所述公共线延伸的第一和第二公共线图案,其中所述数据线位于所述第一和第二公共线图案之间;
连接到所述栅极线和数据线的薄膜晶体管;
连接到所述薄膜晶体管并在所述像素区域中的像素电极;以及
在所述栅极线、公共线以及第一和第二公共线图案下方的无机黑矩阵,其中位于所述第一和第二公共线图案下方的无机黑矩阵屏蔽所述数据线;
所述液晶显示装置还包括:
包括在第二基板上的公共电极的相对基板;以及
在所述阵列基板和所述相对基板之间的液晶层。
2.根据权利要求1所述的装置,其中所述无机黑矩阵由选自包含锗、碳化锗和硅化锗的锗组中的一种材料制成。
3.根据权利要求1所述的装置,其中所述无机黑矩阵具有大约E+15Ωcm或更高的电阻率。
4.根据权利要求1所述的装置,其中所述无机黑矩阵在大约550nm的波长下具有大约5.3的光密度。
6.根据权利要求1所述的装置,其中所述薄膜晶体管包括连接到所述栅极线的栅极电极、栅极绝缘层、半导体层以及源极电极和漏极电极,并且其中所述漏极电极连接到所述像素电极。
7.根据权利要求1所述的装置,其中所述相对基板还包括树脂制成的黑矩阵和填充所述树脂制成的黑矩阵的开口的滤色器。
8.一种制造液晶显示装置的方法,所述方法包括:
在第一基板上形成无机黑矩阵,以及在所述无机黑矩阵上的栅极线、栅极电极、公共线以及第一和第二公共线图案;
在所述栅极线、所述栅极电极、所述公共线以及所述第一和第二公共线图案上形成栅极绝缘层;
在所述栅极绝缘层上形成有源层、欧姆接触层、数据线以及源极电极和漏极电极,其中所述数据线在所述第一和第二公共线图案之间并位于所述无机黑矩阵上方,并且和与其交叉的栅极线限定像素区域;
在所述源极电极和漏极电极上形成钝化层;以及
在所述钝化层上形成连接到所述漏极电极的像素电极。
9.根据权利要求8所述的方法,其中形成所述无机黑矩阵、所述栅极线、所述栅极电极、所述公共线以及所述第一和第二公共线图案是通过一次掩模处理来执行的。
10.根据权利要求8所述的方法,还包括:
在第二机板上形成黑矩阵;以及
形成填充所述黑矩阵的开口的滤色器。
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