CN102232241B - 离子植入控制的激发气体注入 - Google Patents

离子植入控制的激发气体注入 Download PDF

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Publication number
CN102232241B
CN102232241B CN200980148112.9A CN200980148112A CN102232241B CN 102232241 B CN102232241 B CN 102232241B CN 200980148112 A CN200980148112 A CN 200980148112A CN 102232241 B CN102232241 B CN 102232241B
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CN
China
Prior art keywords
ion
source
gas
processing chamber
ion source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200980148112.9A
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English (en)
Chinese (zh)
Other versions
CN102232241A (zh
Inventor
具本雄
维克多·M·本夫尼斯特
克里斯多福·A·罗兰德
奎格·R·钱尼
法兰克·辛克莱
奈尔·J·巴森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN102232241A publication Critical patent/CN102232241A/zh
Application granted granted Critical
Publication of CN102232241B publication Critical patent/CN102232241B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
CN200980148112.9A 2008-12-04 2009-12-03 离子植入控制的激发气体注入 Expired - Fee Related CN102232241B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/328,096 US8501624B2 (en) 2008-12-04 2008-12-04 Excited gas injection for ion implant control
US12/328,096 2008-12-04
PCT/US2009/066549 WO2010065718A2 (en) 2008-12-04 2009-12-03 Excited gas injection for ion implant control

Publications (2)

Publication Number Publication Date
CN102232241A CN102232241A (zh) 2011-11-02
CN102232241B true CN102232241B (zh) 2014-05-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980148112.9A Expired - Fee Related CN102232241B (zh) 2008-12-04 2009-12-03 离子植入控制的激发气体注入

Country Status (6)

Country Link
US (2) US8501624B2 (https=)
JP (1) JP2012511104A (https=)
KR (1) KR20110103992A (https=)
CN (1) CN102232241B (https=)
TW (1) TWI479531B (https=)
WO (1) WO2010065718A2 (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
CA2653581A1 (en) * 2009-02-11 2010-08-11 Kenneth Scott Alexander Butcher Migration and plasma enhanced chemical vapour deposition
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8999798B2 (en) * 2009-12-17 2015-04-07 Applied Materials, Inc. Methods for forming NMOS EPI layers
US8742373B2 (en) 2010-12-10 2014-06-03 Varian Semiconductor Equipment Associates, Inc. Method of ionization
US8664622B2 (en) 2012-04-11 2014-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. System and method of ion beam source for semiconductor ion implantation
US20130305988A1 (en) * 2012-05-18 2013-11-21 Axcelis Technologies, Inc. Inline Capacitive Ignition of Inductively Coupled Plasma Ion Source
US9396902B2 (en) * 2012-05-22 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Gallium ION source and materials therefore
US9530615B2 (en) * 2012-08-07 2016-12-27 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source
US8933630B2 (en) * 2012-12-19 2015-01-13 Taiwan Semiconductor Manufacturing Co., Ltd. Arc chamber with multiple cathodes for an ion source
JP2014157758A (ja) * 2013-02-18 2014-08-28 Sumitomo Heavy Ind Ltd マイクロ波イオン源及びその起動方法
US8759788B1 (en) * 2013-03-11 2014-06-24 Varian Semiconductor Equipment Associates, Inc. Ion source
HK1220287A1 (zh) 2013-03-15 2017-04-28 Glenn Lane Family Limited Liability Limited Partnership 可调节的质量分辨孔
JP6336719B2 (ja) * 2013-07-16 2018-06-06 株式会社ディスコ プラズマエッチング装置
US9524849B2 (en) * 2013-07-18 2016-12-20 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system
US9018111B2 (en) * 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
DE102014205695B4 (de) * 2014-03-27 2016-01-28 Christof-Herbert Diener Niederdruckplasmaanlage mit sequentieller Steuerung
WO2015171335A1 (en) * 2014-05-06 2015-11-12 Applied Materials, Inc. Directional treatment for multi-dimensional device processing
US9275866B2 (en) * 2014-05-15 2016-03-01 International Business Machines Corporation Gas cluster reactor for anisotropic film growth
US9887067B2 (en) * 2014-12-03 2018-02-06 Varian Semiconductor Equipment Associates, Inc. Boron implanting using a co-gas
CN106498360B (zh) * 2015-09-06 2019-01-25 中芯国际集成电路制造(上海)有限公司 离子形成容器以及离子源
CN109075041B (zh) * 2016-04-05 2022-12-06 瓦里安半导体设备公司 将加工物质与掺杂剂植入工件的方法及用于工件的设备
US9899193B1 (en) * 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
US10256069B2 (en) * 2016-11-24 2019-04-09 Axcelis Technologies, Inc. Phosphorous trifluoride co-gas for carbon implants
US9978554B1 (en) * 2017-01-26 2018-05-22 Varian Semiconductor Equipment Associates, Inc. Dual cathode ion source
US10636645B2 (en) * 2018-04-20 2020-04-28 Perkinelmer Health Sciences Canada, Inc. Dual chamber electron impact and chemical ionization source
JP6837088B2 (ja) * 2019-02-14 2021-03-03 日本電子株式会社 イオンビーム電流測定装置、試料作成装置及びイオンビーム電流算出方法
CN110379698A (zh) * 2019-07-29 2019-10-25 上海集成电路研发中心有限公司 一种具有双离化室的离子源
CN114600222B (zh) * 2019-09-20 2025-09-09 恩特格里斯公司 用于离子植入的等离子体浸渍方法
US11515131B2 (en) * 2019-12-06 2022-11-29 The Charles Stark Draper Laboratory Inc. System for focused deposition of atomic vapors
US12154753B2 (en) * 2021-09-13 2024-11-26 Applied Materials, Inc. Device to control uniformity of extracted ion beam
CN115602513B (zh) * 2021-09-15 2023-08-29 和舰芯片制造(苏州)股份有限公司 用于离子植入机的气体有效利用率的监测方法及系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050082001A1 (en) * 2003-09-25 2005-04-21 Seiko Epson Corporation Cleaning method and cleaning device

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2017070A (en) * 1932-12-19 1935-10-15 Du Pont Plastic composition
US5107170A (en) * 1988-10-18 1992-04-21 Nissin Electric Co., Ltd. Ion source having auxillary ion chamber
JPH088243B2 (ja) * 1989-12-13 1996-01-29 三菱電機株式会社 表面クリーニング装置及びその方法
JPH05314940A (ja) 1992-05-08 1993-11-26 Hitachi Ltd イオンビ−ム応用装置のイオン源
JPH06187936A (ja) * 1992-12-16 1994-07-08 Shimadzu Corp 負イオン源
US5517084A (en) * 1994-07-26 1996-05-14 The Regents, University Of California Selective ion source
JP3319285B2 (ja) * 1996-06-05 2002-08-26 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JP3368790B2 (ja) 1997-02-20 2003-01-20 日新電機株式会社 イオン源装置
JP2002503031A (ja) 1998-02-09 2002-01-29 アプライド マテリアルズ インコーポレイテッド 種密度を個別制御するプラズマアシスト処理チャンバ
US6124675A (en) * 1998-06-01 2000-09-26 University Of Montreal Metastable atom bombardment source
US6095085A (en) * 1998-08-20 2000-08-01 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
JP4029495B2 (ja) * 1998-09-16 2008-01-09 日新イオン機器株式会社 イオン源
JP4116210B2 (ja) * 1999-12-09 2008-07-09 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー イオン注入方法および装置
US6656282B2 (en) * 2001-10-11 2003-12-02 Moohan Co., Ltd. Atomic layer deposition apparatus and process using remote plasma
US6805779B2 (en) * 2003-03-21 2004-10-19 Zond, Inc. Plasma generation using multi-step ionization
US7820981B2 (en) * 2003-12-12 2010-10-26 Semequip, Inc. Method and apparatus for extending equipment uptime in ion implantation
US7791047B2 (en) * 2003-12-12 2010-09-07 Semequip, Inc. Method and apparatus for extracting ions from an ion source for use in ion implantation
US7750575B2 (en) * 2004-04-07 2010-07-06 Zond, Inc. High density plasma source
JP2005322668A (ja) 2004-05-06 2005-11-17 Renesas Technology Corp 成膜装置および成膜方法
JP5536981B2 (ja) * 2004-12-20 2014-07-02 パーサー、ケネス、エイチ． 低エネルギー／高電流リボン・ビーム注入装置におけるビーム中和の改善
JP4781711B2 (ja) * 2005-05-12 2011-09-28 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
TW200718802A (en) 2005-08-02 2007-05-16 Massachusetts Inst Technology Method of using NF3 for removing surface deposits
JP4622972B2 (ja) * 2006-09-12 2011-02-02 セイコーエプソン株式会社 プラズマ処理装置およびプラズマ処理方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050082001A1 (en) * 2003-09-25 2005-04-21 Seiko Epson Corporation Cleaning method and cleaning device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开平6-187936A 1994.07.08

Also Published As

Publication number Publication date
TW201029042A (en) 2010-08-01
US20100140077A1 (en) 2010-06-10
TWI479531B (zh) 2015-04-01
WO2010065718A3 (en) 2010-08-19
US20130313443A1 (en) 2013-11-28
KR20110103992A (ko) 2011-09-21
US9018829B2 (en) 2015-04-28
CN102232241A (zh) 2011-11-02
WO2010065718A2 (en) 2010-06-10
US8501624B2 (en) 2013-08-06
JP2012511104A (ja) 2012-05-17

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