CN102221761A - 硅基液晶器件及其制作方法 - Google Patents
硅基液晶器件及其制作方法 Download PDFInfo
- Publication number
- CN102221761A CN102221761A CN2010101548369A CN201010154836A CN102221761A CN 102221761 A CN102221761 A CN 102221761A CN 2010101548369 A CN2010101548369 A CN 2010101548369A CN 201010154836 A CN201010154836 A CN 201010154836A CN 102221761 A CN102221761 A CN 102221761A
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- China
- Prior art keywords
- dielectric layer
- liquid crystal
- pole plate
- silicon
- switching transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- G02F1/13685—Top gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (16)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010154836.9A CN102221761B (zh) | 2010-04-16 | 2010-04-16 | 硅基液晶器件及其制作方法 |
US13/081,471 US8681283B2 (en) | 2010-04-16 | 2011-04-06 | Method and resulting capacitor structure for liquid crystal on silicon display devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010154836.9A CN102221761B (zh) | 2010-04-16 | 2010-04-16 | 硅基液晶器件及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102221761A true CN102221761A (zh) | 2011-10-19 |
CN102221761B CN102221761B (zh) | 2014-04-02 |
Family
ID=44778351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010154836.9A Active CN102221761B (zh) | 2010-04-16 | 2010-04-16 | 硅基液晶器件及其制作方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8681283B2 (zh) |
CN (1) | CN102221761B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103323989A (zh) * | 2013-06-27 | 2013-09-25 | 南京中电熊猫液晶显示科技有限公司 | 一种显示器 |
CN103545246A (zh) * | 2012-07-12 | 2014-01-29 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9958726B2 (en) | 2015-02-25 | 2018-05-01 | Omnivision Technologies, Inc. | Highly-reflective liquid crystal on silicon panel comprising a continuous reflective coating covering pixel electrodes and an inter-pixel coating |
JP6593416B2 (ja) * | 2017-10-23 | 2019-10-23 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
US10761385B2 (en) | 2017-12-22 | 2020-09-01 | Omnivision Technologies, Inc. | Liquid crystal on silicon panel having less diffraction |
US10739646B1 (en) * | 2019-04-30 | 2020-08-11 | Omnivision Technologies, Inc. | Liquid crystal on silicon device mirror metal process |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1985004023A1 (en) * | 1984-03-08 | 1985-09-12 | Vidium, Inc. | Light valve display device having integrated driving circuits |
EP0763765A1 (en) * | 1995-09-14 | 1997-03-19 | Canon Kabushiki Kaisha | Display unit |
CN1202682A (zh) * | 1997-06-05 | 1998-12-23 | 精工爱普生株式会社 | 液晶屏用基板、液晶屏及使用它的电子装置 |
US5926240A (en) * | 1996-01-29 | 1999-07-20 | Hitachi, Ltd. | Liquid crystal display apparatus comprise a silicon nitride dielectric film with thickness in a range of 80mm-170mm and disposes between a reflective pixel elect and LC layer |
EP1012660A1 (en) * | 1997-08-12 | 2000-06-28 | Thomson Consumer Electronics, Inc. | High capacitance mirror driver cell |
CN1435718A (zh) * | 2002-01-30 | 2003-08-13 | 联华电子股份有限公司 | 反射式液晶背板的结构与制作方法 |
US20040169798A1 (en) * | 2003-02-28 | 2004-09-02 | Takayuki Iwasa | Reflective liquid crystal display |
CN101196655A (zh) * | 2006-12-04 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶显示器单元及其形成方法 |
US7567308B2 (en) * | 2004-11-30 | 2009-07-28 | Victor Company Of Japan, Ltd. | Reflective active matrix liquid crystal display and apparatus |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2814161B2 (ja) * | 1992-04-28 | 1998-10-22 | 株式会社半導体エネルギー研究所 | アクティブマトリクス表示装置およびその駆動方法 |
JPH08306926A (ja) * | 1995-05-07 | 1996-11-22 | Semiconductor Energy Lab Co Ltd | 液晶電気光学装置 |
JPH0926603A (ja) * | 1995-05-08 | 1997-01-28 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JPH09281508A (ja) * | 1996-04-12 | 1997-10-31 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその作製方法 |
US7388633B2 (en) * | 2002-12-13 | 2008-06-17 | Victor Company Of Japan, Limited | Reflective liquid crystal display |
-
2010
- 2010-04-16 CN CN201010154836.9A patent/CN102221761B/zh active Active
-
2011
- 2011-04-06 US US13/081,471 patent/US8681283B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1985004023A1 (en) * | 1984-03-08 | 1985-09-12 | Vidium, Inc. | Light valve display device having integrated driving circuits |
EP0763765A1 (en) * | 1995-09-14 | 1997-03-19 | Canon Kabushiki Kaisha | Display unit |
US5926240A (en) * | 1996-01-29 | 1999-07-20 | Hitachi, Ltd. | Liquid crystal display apparatus comprise a silicon nitride dielectric film with thickness in a range of 80mm-170mm and disposes between a reflective pixel elect and LC layer |
CN1202682A (zh) * | 1997-06-05 | 1998-12-23 | 精工爱普生株式会社 | 液晶屏用基板、液晶屏及使用它的电子装置 |
EP1012660A1 (en) * | 1997-08-12 | 2000-06-28 | Thomson Consumer Electronics, Inc. | High capacitance mirror driver cell |
CN1435718A (zh) * | 2002-01-30 | 2003-08-13 | 联华电子股份有限公司 | 反射式液晶背板的结构与制作方法 |
US20040169798A1 (en) * | 2003-02-28 | 2004-09-02 | Takayuki Iwasa | Reflective liquid crystal display |
US7567308B2 (en) * | 2004-11-30 | 2009-07-28 | Victor Company Of Japan, Ltd. | Reflective active matrix liquid crystal display and apparatus |
CN101196655A (zh) * | 2006-12-04 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶显示器单元及其形成方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103545246A (zh) * | 2012-07-12 | 2014-01-29 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
CN103545246B (zh) * | 2012-07-12 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
CN103323989A (zh) * | 2013-06-27 | 2013-09-25 | 南京中电熊猫液晶显示科技有限公司 | 一种显示器 |
CN103323989B (zh) * | 2013-06-27 | 2016-03-16 | 南京中电熊猫液晶显示科技有限公司 | 一种显示器 |
Also Published As
Publication number | Publication date |
---|---|
US8681283B2 (en) | 2014-03-25 |
CN102221761B (zh) | 2014-04-02 |
US20120081649A1 (en) | 2012-04-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121116 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121116 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |