CN102214553A - Wafer end surface cleaning method - Google Patents
Wafer end surface cleaning method Download PDFInfo
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- CN102214553A CN102214553A CN2011101331614A CN201110133161A CN102214553A CN 102214553 A CN102214553 A CN 102214553A CN 2011101331614 A CN2011101331614 A CN 2011101331614A CN 201110133161 A CN201110133161 A CN 201110133161A CN 102214553 A CN102214553 A CN 102214553A
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- cleaning
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- anchor clamps
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Abstract
The invention discloses an end surface cleaning method of a semiconductor wafer. Compared with the soak cleaning method, the method does not need a large amount of chemical agent to immerse the whole wafer to get rid of the pollutant, instead creatively provides that the medicament droplets, by the surface tension, adhered in a cleaning clamp slit are used to clean the wafer end surface. Each cleaning process only needs microliter of cleaning fluid, which greatly reduces the dosage of the cleaning liquid, and reduces the cleaning cost and the discharge amount of the waste liquid in the cleaning process.
Description
Technical field
The present invention relates to a kind of cleaning side's method of semiconductor crystal wafer, particularly a kind of cleaning method to the semiconductor crystal wafer end face.
Background technology
Along with the progress of integrated circuit fabrication process, the cleanliness factor requirement to crystal column surface in the wafer processing is more and more higher, and a spot of pollutant just might cause the decline of expensive wafer quality even scrap.The source of pollutant is a lot of in the wafer manufacture process, and, pollute the wafer end face easily.To contaminated end face in the wafer manufacture process, traditional treatment method is cleaned whole being immersed in chemical agent or the pure water of wafer.Chemical agent that this process consumption is a large amount of and pure water increase the wafer manufacturing cost, challenge the requirement of energy-saving and emission-reduction simultaneously.If can clean contaminated end face pointedly, can reduce the consumption of cleaning fluid widely, save a large amount of costs, reach the effect of energy-saving and emission-reduction.
Summary of the invention
Technical problem to be solved provides a kind of new cleaning method, cleans to the wafer end face of needs cleaning rather than to wafer integral body, can reduce chemical agent and pure water consumption effectively.At the deficiency of cleaning technique in the past, the present invention has designed a kind of brand-new cleaning technique, adopts a kind of special cleaning anchor clamps that the wafer end face is carried out controlled cleaning, has avoided indistinction ground that wafer is carried out integral body and has cleaned.Chemical agent and pure water that whole process expends calculate with microlitre, have improved the burden that the discharging waste liquid of this technical process causes natural environment widely.
In order to address the above problem, the present invention has designed following technical scheme:
Designed special cleaning anchor clamps 1, its side has a slit 2, and inside has liquid output pipe road 3 and liquids recovery pipeline 4, wafer end face 5 and be adsorbed in the anchor clamps slit and the cleaning agent drop 6 of wafer end.At first soup is cleaned in output, and this moment, soup relied on the surface tension of liquid to form drop can not flow out attached to the slit place, the end face of wafer is contacted with drop and rotates and can carry out washing and cleaning operation.Can clean the end face elder generation with medicament of whole wafer according to cleaning model, the back is cleaned with pure water.Owing to only contaminated wafer end face is positioned cleaning, chemical agent that consumes in the whole process and pure water amount only for the 100-200 microlitre/time, compared to medicament and pure water to be upgraded to traditional soaking and washing method of consumption unit, the utilance that has improved resource widely with clean accuracy.Measure according to material object, final cleannes can reach the lower limit 0.5X10 that ICP-MS detects
9Atoms/cm
2, once to clean and can remove 80% pollutant, 3 cleanings almost can be removed the pollutant more than 90%.Wherein, metal pollutant comprises: Li, Be, Na, Mg, Al, K, V, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, Y, Ag, Cd, Ba, Pb, Bi, Ce.
Description of drawings
The wafer end face that Fig. 1 does not import cleaning fluid cleans schematic diagram
The wafer end face that Fig. 2 imports cleaning fluid cleans schematic diagram
Clean anchor clamps-1, slit-2, liquid output pipe road-3, liquids recovery pipeline-4, wafer end face-5, cleaning agent drop-6
Embodiment:
The present invention adopts following concrete mode that the semiconductor crystal wafer end face is cleaned:
Choose the semiconductor crystal wafer that needs operation;
With manipulator wafer being positioned over above-below direction moves on freely the lifter; Lifter descends, and wafer is arranged on the disk body of revolution supporting wafer freely; Adjusting mechanism is aimed at the disk body center of circle to the wafer center of circle with one heart; Three runners that wafer rotation and drive are fixed on the disk body downside rotate together; Adjusting mechanism makes wafer maintenance level, rotates with one heart with one heart;
Utilize 1 pair of wafer end face 5 of cleaning anchor clamps to clean; The structure of described cleaning anchor clamps is that the side has a slit 2, and inside has liquid output pipe road 3 and liquids recovery pipeline 4, and wherein the liquid output pipe road is used for output and cleans soup or pure water, and the liquids recovery pipeline is used to reclaim the waste liquid after the cleaning; During use, wafer constantly rotates, and computer is by adjusting the distance of cleaning anchor clamps slit and wafer end face, and the cleaning agent drop 6 in having only the wafer end face when making the wafer rotation and cleaning anchor clamps side slit contacts.The cleaning agent drop can not lose from cleaning the chuck side surface current attached to wafer end face and slit place under surface tension effects.The wafer end face with cleaning agent clean finish after, medicament is reclaimed and switches to pure water output, to the cleaning that tries again of wafer end face;
This mode can be carried out the end face cleaning to the wafer of various conventional shape sizes; Cleaning fluid in the whole cleaning process can be changed in real time.Output/the yield of the rotary speed of wafer, cleaning anchor clamps slit and wafer end face distance, cleaning agent and pure water is by computer control.Cleaning process can be selected from touch-screen menus, or selects for use from touch-screen input wait.
Claims (5)
1. semiconductor crystal wafer end face cleaning method is characterized in that adopting following steps:
(1) manipulator is positioned over above-below direction to wafer and moves on freely the lifter; Lifter descends, and wafer is arranged on the disk body of revolution supporting wafer freely; Adjusting mechanism is aimed at the disk body center of circle to the wafer center of circle with one heart; Three runners that wafer rotation and drive are fixed on the disk body downside rotate together; Adjusting mechanism makes wafer maintenance level, rotates with one heart with one heart;
(2) clean anchor clamps output cleaning agent, the wafer end face is cleaned;
(3) the wafer end face with cleaning agent clean finish after, medicament is reclaimed and switches to pure water output, to the cleaning that tries again of wafer end face.
The structure of described cleaning anchor clamps is that the side has a slit, and inside has liquid output pipe road and liquids recovery pipeline, and wherein the liquid output pipe road is used to export fresh cleaning soup or pure water, and the liquids recovery pipeline is used for reclaiming cleaning back waste liquid; Clean anchor clamps slit and wafer end face distance by adjusting during use, the cleaning agent drop in having only the wafer end face when making the wafer rotation and cleaning anchor clamps side slit contacts.
2. the method for claim 1, it is characterized in that: the cleaning agent in the step (2) is the drop form, and can not lose from cleaning the chuck side surface current attached to the slit place under surface tension effects.
3. method as claimed in claim 2 is characterized in that: clean anchor clamps slit and wafer end face distance by adjusting, have only the wafer end face to contact with the cleaning drop when making the wafer rotation.
4. method as claimed in claim 3 is characterized in that: the wafer to various conventional shape sizes can carry out the end face cleaning; Cleaning fluid in the whole cleaning process can be changed in real time.
5. as any described method among the claim 1-4, it is characterized in that: the output/yield of the rotary speed of wafer, cleaning anchor clamps slit and wafer end face distance, cleaning agent or pure water is by computer control; Menu can be selected from touch-screen, or selects for use from touch-screen input wait.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101331614A CN102214553A (en) | 2011-05-23 | 2011-05-23 | Wafer end surface cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101331614A CN102214553A (en) | 2011-05-23 | 2011-05-23 | Wafer end surface cleaning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102214553A true CN102214553A (en) | 2011-10-12 |
Family
ID=44745815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101331614A Pending CN102214553A (en) | 2011-05-23 | 2011-05-23 | Wafer end surface cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102214553A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109501015A (en) * | 2017-09-14 | 2019-03-22 | 株式会社迪思科 | Cutting apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003045788A (en) * | 2001-08-02 | 2003-02-14 | Tokyo Electron Ltd | Wafer processing method and apparatus |
| CN1481580A (en) * | 2000-12-15 | 2004-03-10 | K��C���Ƽ���ʽ���� | Appts for cleaning edges of wafers |
| CN1794420A (en) * | 2004-09-30 | 2006-06-28 | 兰姆研究有限公司 | Apparatus and method for processing a substrate |
| CN1864243A (en) * | 2003-10-08 | 2006-11-15 | 施蒂格哈马技术股份公司 | Device and method for cleaning the edges of substrates |
-
2011
- 2011-05-23 CN CN2011101331614A patent/CN102214553A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1481580A (en) * | 2000-12-15 | 2004-03-10 | K��C���Ƽ���ʽ���� | Appts for cleaning edges of wafers |
| JP2003045788A (en) * | 2001-08-02 | 2003-02-14 | Tokyo Electron Ltd | Wafer processing method and apparatus |
| CN1864243A (en) * | 2003-10-08 | 2006-11-15 | 施蒂格哈马技术股份公司 | Device and method for cleaning the edges of substrates |
| CN1794420A (en) * | 2004-09-30 | 2006-06-28 | 兰姆研究有限公司 | Apparatus and method for processing a substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109501015A (en) * | 2017-09-14 | 2019-03-22 | 株式会社迪思科 | Cutting apparatus |
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| DD01 | Delivery of document by public notice |
Addressee: Ye Weiqing Document name: the First Notification of an Office Action |
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| DD01 | Delivery of document by public notice |
Addressee: Ye Weiqing Document name: Notification that Application Deemed to be Withdrawn |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111012 |