CN102208513B - 发光半导体器件及其制造方法 - Google Patents

发光半导体器件及其制造方法 Download PDF

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Publication number
CN102208513B
CN102208513B CN201110073883.5A CN201110073883A CN102208513B CN 102208513 B CN102208513 B CN 102208513B CN 201110073883 A CN201110073883 A CN 201110073883A CN 102208513 B CN102208513 B CN 102208513B
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CN
China
Prior art keywords
layer
semiconductor device
protective layer
plating
reflection layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110073883.5A
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English (en)
Chinese (zh)
Other versions
CN102208513A (zh
Inventor
平尾直树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
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Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN102208513A publication Critical patent/CN102208513A/zh
Application granted granted Critical
Publication of CN102208513B publication Critical patent/CN102208513B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01933—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01935—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/942—Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
CN201110073883.5A 2010-03-30 2011-03-23 发光半导体器件及其制造方法 Expired - Fee Related CN102208513B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010078239A JP5845557B2 (ja) 2010-03-30 2010-03-30 半導体発光素子の製造方法
JP2010-078239 2010-03-30

Publications (2)

Publication Number Publication Date
CN102208513A CN102208513A (zh) 2011-10-05
CN102208513B true CN102208513B (zh) 2016-06-22

Family

ID=44697251

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110073883.5A Expired - Fee Related CN102208513B (zh) 2010-03-30 2011-03-23 发光半导体器件及其制造方法

Country Status (3)

Country Link
US (2) US20110241047A1 (https=)
JP (1) JP5845557B2 (https=)
CN (1) CN102208513B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5845557B2 (ja) 2010-03-30 2016-01-20 ソニー株式会社 半導体発光素子の製造方法
KR101125025B1 (ko) 2010-07-23 2012-03-27 엘지이노텍 주식회사 발광소자 및 그 제조방법
TW201414012A (zh) * 2012-09-26 2014-04-01 Chi Mei Lighting Tech Corp 發光裝置及其製作方法
JP6208051B2 (ja) * 2014-03-06 2017-10-04 大同特殊鋼株式会社 点光源発光ダイオード
CN105226160A (zh) * 2015-09-01 2016-01-06 中国科学院半导体研究所 化学镀银制作氮化镓基发光二极管反射镜金属层的方法
CN106057993B (zh) * 2016-08-18 2019-07-23 厦门市三安光电科技有限公司 一种薄膜垂直发光组件及其制作方法
JP6824501B2 (ja) * 2017-02-08 2021-02-03 ウシオ電機株式会社 半導体発光素子
CN111200046B (zh) * 2020-01-13 2022-06-03 广东省半导体产业技术研究院 Led芯片结构及其制作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100361324C (zh) * 2003-08-25 2008-01-09 三星电子株式会社 氮化物基发光器件及其制造方法
CN100565949C (zh) * 2005-09-16 2009-12-02 昭和电工株式会社 氮化物半导体发光器件的制造方法

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US1627900A (en) * 1926-08-23 1927-05-10 Eastman Kodak Co Process of coating aluminum surfaces
JP2003168823A (ja) * 2001-09-18 2003-06-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
TWI243488B (en) 2003-02-26 2005-11-11 Osram Opto Semiconductors Gmbh Electrical contact-area for optoelectronic semiconductor-chip and its production method
US7452803B2 (en) * 2004-08-12 2008-11-18 Megica Corporation Method for fabricating chip structure
EP1804301B1 (en) * 2004-10-19 2017-01-11 Nichia Corporation Semiconductor element
US7479663B2 (en) * 2005-09-12 2009-01-20 Showa Denko K.K. Gallium nitride-based semiconductor light emitting device and process for its production
JP4819453B2 (ja) * 2005-09-12 2011-11-24 昭和電工株式会社 窒化ガリウム系半導体発光素子およびその製造方法
US7939351B2 (en) * 2005-09-16 2011-05-10 Showa Denko K.K. Production method for nitride semiconductor light emitting device
KR100640496B1 (ko) * 2005-11-23 2006-11-01 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자
JP2007157852A (ja) * 2005-12-01 2007-06-21 Sony Corp 半導体発光素子およびその製造方法
US7781247B2 (en) * 2006-10-26 2010-08-24 SemiLEDs Optoelectronics Co., Ltd. Method for producing Group III-Group V vertical light-emitting diodes
JP4367531B2 (ja) * 2007-06-06 2009-11-18 ソニー株式会社 発光素子における電極構造の形成方法、及び、積層構造体の形成方法
TWI350563B (en) * 2007-07-10 2011-10-11 Delta Electronics Inc Manufacturing method of light emitting diode apparatus
JP5310371B2 (ja) * 2009-08-10 2013-10-09 ソニー株式会社 半導体発光素子及びその製造方法
JP5845557B2 (ja) 2010-03-30 2016-01-20 ソニー株式会社 半導体発光素子の製造方法
JP5740901B2 (ja) 2010-10-15 2015-07-01 ソニー株式会社 発光装置および表示装置
JP6328497B2 (ja) 2014-06-17 2018-05-23 ソニーセミコンダクタソリューションズ株式会社 半導体発光素子、パッケージ素子、および発光パネル装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100361324C (zh) * 2003-08-25 2008-01-09 三星电子株式会社 氮化物基发光器件及其制造方法
CN100565949C (zh) * 2005-09-16 2009-12-02 昭和电工株式会社 氮化物半导体发光器件的制造方法

Also Published As

Publication number Publication date
US20110241047A1 (en) 2011-10-06
US11335830B2 (en) 2022-05-17
JP5845557B2 (ja) 2016-01-20
JP2011211015A (ja) 2011-10-20
US20170345973A1 (en) 2017-11-30
CN102208513A (zh) 2011-10-05

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