CN102203956A - 用于柔性光电和显示设备中的集电器系统和制造方法 - Google Patents

用于柔性光电和显示设备中的集电器系统和制造方法 Download PDF

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CN102203956A
CN102203956A CN2009801318339A CN200980131833A CN102203956A CN 102203956 A CN102203956 A CN 102203956A CN 2009801318339 A CN2009801318339 A CN 2009801318339A CN 200980131833 A CN200980131833 A CN 200980131833A CN 102203956 A CN102203956 A CN 102203956A
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加文·塔洛克
约翰·德西尔维斯特罗
达米恩·米利肯
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Abstract

公开了用于制造光电设备的导体组件，包括：若干电传导丝状物；若干基本透明的丝状物；其中，该传导和透明的丝状物连接在一起，以形成一个柔性的网状结构。也公开了被制造成包括该导体组件的光电设备或子组件。

Description

用于柔性光电和显示设备中的集电器系统和制造方法
技术领域
本发明涉及用于包括显示设备的光电设备中的基本透明的集电器系统。这样的设备可以包括但不局限于，诸如太阳能电池之类的光伏设备，或诸如那些用于将水分解为氢气和氧气之类的光催化设备，或电致变色视窗或显示器，或LCD或OLED(有机发光二极管)显示器。
背景技术
在诸如太阳能电池，或更具体地，染料敏化太阳能电池之类的任何光电设备中，至少一个电极都需要在紫外线-可见光-红外线波长范围中的电传导率和光学透明性这两个特性。理想地，高传导率(例如，银)应与高透射率(例如＞95％)结合。然而，几乎所有的实用的透明传导性材料在这两个必要参数之间表现出相反的关系，那么对于任何具体应用来说，必须在这两个标准之间达到折中。用于这样的光电设备的设计典型地喜欢更低的传导率，以获得更高的光学透射率，并确保适当的高传导率的集电通路(“指状物”)在一起间隔得足够近，以最小化通过更低传导率的透明导体的电压损耗。
有持续的需要去为光电设备提供替代的或改进的导体布置和制造技术。
发明内容
在第一方面中，本发明提供了一种用于制造光电设备的导体组件，包括：若干电传导性丝状物；若干基本透明的丝状物；其中连接所述传导性和透明的丝状物连接在一起，以形成柔性的网状结构。
在大规模的光电设备生产中，可能在专用的生产线上制造这样的导体组件，并以卷的形式送到随后的生产工序，比如，以使卷对卷处理便利。所述透明的丝状物在随后的工艺中用来保持导体组件的结构。当制作成光电化学设备时，所述透明的丝状物不会阻挡光线进入电池，因此最大化了所获取的光和电池的性能。
所述网状结构可能为网状物的形式。
所述传导性丝状物可能主要排列在第一方向上；而所述透明的丝状物主要排列在第二方向上。
所述第一方向和所述第二方向可能基本相互直交。
所述导体可能由包括铜、钛、钢、不锈钢；锡、铂、铅、铁、锰铜、康铜、银、金、铝、钨、镍、钼，及其合金中的任一项的材料构成，所述合金包括黄铜。
所述基本透明的丝状物可能由诸如包括聚对苯二甲酸乙二醇酯或聚萘二甲酸乙二醇酯的聚酯、聚酰胺、包括聚丙烯的聚烯烃、聚醚酮、聚醚醚酮聚芳砜、聚醚砜、聚苯砜、聚氯乙烯或氟化聚合物之类的聚合物构成。
在第二方面中，本发明提供了一种用于制造光电设备的子组件，包括：柔性的、基本透明的衬底；根据本发明的第一方面的导体组件；和与所述衬底和所述导体组件相连的一层透明电传导性材料。
所述导体可能至少部分嵌入所述衬底中。
所述导体可能用粘合剂粘贴到所述衬底。
所述导体可能是各向异性网状物的一部分。
所述导体组件的所述导体可能置于所述透明电传导性材料和所述衬底之间。
所述透明电传导性材料可能包括碳纳米管、掺锡氧化铟(ITO)、掺氟氧化锡(FTO)、掺杂或改性的氧化锡或氧化锌、聚(3，4-乙撑二氧噻吩)(PEDOT)、聚(3，4-乙撑二氧噻吩)聚(苯乙烯磺酸)(PEDOT:PSS)、聚(3，4-乙撑二氧噻吩)-四甲基丙烯酸酯(PEDOT:TMA)、聚苯胺或聚吡咯中的任一项。
在第三方面中，本发明提供了一种制造用于制造光电设备的子组件的方法，包括步骤：提供根据本发明的第一方面的导体组件；提供柔性且基本透明的衬底；和将所述导体组件和所述衬底相连。
所述将所述导体组件和所述衬底相连的步骤可能包括将所述导体组件至少部分嵌入柔性衬底中的步骤。
嵌入导体组件的步骤可能包含热处理。
所述将所述导体组件和所述衬底相连的步骤可能包含使用粘合剂。
所述导体组件可能从一卷中展开且所述子组件在连续的卷工艺中形成。
所述方法可能还包括将一层透明电传导性材料与所述衬底相连的步骤。
可能通过印刷或喷射工艺敷所述透明电传导性材料。
在第四方面中，本发明提供了一种柔性光电设备，使用根据本发明的第三方面的子组件来制造。
附图说明
现在将仅通过实例，根据附图来描述本发明的实施方式，其中：
图1是根据用于制造光电设备的本发明的一个实施方式的子组件的横断面视图；
图2是图1的子组件的俯视图；
图3A到3H是根据发明的其他实施方式的子组件的横断面图；
图4是根据本发明的一个实施方式的导体组件的示意图。
具体实施方式
参照图1，示出了用于制造光电设备的子组件10，包括由诸如聚对苯二甲酸乙二醇酯(PET)之类的聚合物膜形成的柔性的、透明的衬底101，钛丝形式的若干柔性导体100和诸如碳纳米管的非常薄的膜之类的一层透明电传导性材料102。
图2描绘了图1的子组件的平面视图并突出了一些重要的尺寸。导体100(在这里现在称为“指状物”)有“指状物”宽度W(201)和“指状物”间的间距S(202)。高透射率传导层102被置于“指状物”(100)之间。进一步由置于“指状物”之间的高透射率导体的两个参数来表示透明的集电器的特征：高透射率导体的透射率(T)和高透射率导体的薄层电阻(γ)。还进一步由“指状物”自身的两个参数来表示透明的集电器的特征：各“指状物”的横断面面积(A)和“指状物”材料的电阻率(ρ)。
在连续的卷对卷工艺中制造子组件10。衬底101从一卷上展开。当此发生时，从卷轴上展开若干铜丝，以按预定间距互相平行地敷于衬底。在铜丝上应用高温和压力，以引起衬底材料的一些局部熔化。导体变得部分嵌入衬底中，其提供了一定程度的机械强度。之后，通过印刷工艺敷上那层透明材料。
在这个实施方式中，导体由铜形成。在其他实施方式中，可以使用不同的材料。应从具有优选地＜500nΩm(例如，钛，和诸如不锈钢之类的各种合金)；更优选地＜200nΩm(例如，锡、铂、铅、铁，和诸如锰铜和康铜之类的各种合金)的；最优选地＜100nΩm(例如，银、铜、金、铝、钨、镍、钼，和诸如黄铜之类的各种合金)的电阻率ρ的材料中选取“指状物”材料。由于在经由“指状物”的电子传输期间所减少的损耗，更低电阻率的材料导致设备效率更高。也必须注意选择与系统的其他部件有合适的化学相容性的材料。
“指状物”材料应当形成所需的尺寸以使它们的横断面面积A为：优选地25μm2＜A＜25000μm2；更优选地500μm2＜A＜10000μm2；最优选地1000μm2＜A＜5000μm2。横断面面积太小的“指状物”是非常细小的，在生产期间难以使用，并使生产更昂贵。横断面面积太大的“指状物”会致使总体设备厚度太大，导致设备效率更低。注意虽然示出高传导性元件(图1中的100)为圆形的横断面，这些元件的形状不必仅被局限于圆柱形的形状，比如，可以包括椭圆形的、正方形的、矩形的或任何其他的横断面外形。
应当选取高透射率导体薄层102电阻γ以使：优选地5ohm/square＜γ＜10000ohm/square；更优选地100ohm/square＜γ＜5000ohm/square；最优选地250ohm/square＜γ＜1000ohm/square。具有低薄层电阻的透明导体要么是高的材料或生产成本的，要么是低透射率的。然而，由于向或从“指状物”传输电子的电阻损耗，太高的透明导体薄层电阻值会降低设备性能。
应当选取高透射率导体的透射率T以使：优选地T＞80％；更优选地T＞85％；最优选地T＞90％。更高透射率的透明导体提高设备效率，因为它们允许更大量的光线通过。必须注意确保透明导体和其他的设备组成部分之间的化学相容性。
在这个实施方式中，高透射率导体材料基于碳纳米管的薄膜。在其他的实施方式中，合适的高透射率导体材料包括，例如：掺锡氧化铟(ITO)、掺氟氧化锡(FTO)、其他掺杂或改性的氧化锡或氧化锌、聚(3，4-乙撑二氧噻吩)(PEDOT)、聚(3，4-乙撑二氧噻吩)-聚(苯乙烯磺酸)(PEDOT:PSS)、聚(3，4-乙撑二氧噻吩)-四甲基丙烯酸酯(PEDOT:TMA)、聚苯胺或聚吡咯的适当尺寸的颗粒层。使用例如：PEDOT、PEDOT:PSS、PEDOT:TMA或碳，适当材料的非密集纳米线、纳米纤维或纳米管阵列也可以起到高透射率导体的作用。
“指状物”应当间隔开S以使：优选地0.05mm＜S＜10mm；更优选地0.25mm＜S＜5mm；最优选地0.5mm＜S＜2mm。“指状物”的间距太近，会由于阻挡太多的入射光而降低设备的性能，而且出现成本和制造问题。“指状物”的间距太远，会由于在向或从“指状物”传输电子期间增加电阻损耗而降低设备的性能。
可以通过多种不同的技术将“指状物”合并到一个设备里。例如，可以使用合适配制的导电墨水，结合任何普遍使用的卷对卷或网适应性印刷技术，包括但不限于：轮转丝网印刷、凹版印刷或柔性版印刷，在适合的衬底上形成“指状物”图案。
参照图4，可以以导体组件形式提供传导性“指状物”，该导体组件是以诸如各向异性的编织网状物300之类的网状结构的形式，其中以期望的传导方向来排列传导性丝状物301。与传导性丝状物301直交地排列透明丝状物302，透明丝状物302由高透明但非传导性的材料构成。合适的材料包括聚合物，诸如包括聚对苯二甲酸乙二(醇)酯或聚萘二甲酸乙二(醇)酯的聚酯纤维、聚酰胺、包括聚丙烯的聚烯烃、聚醚酮、聚醚醚酮聚芳砜、聚醚砜、聚苯砜、聚氯乙烯、氟化聚合物或提供期望的机械的和光学的特性，和对于设备接触的任何溶液有足够的耐化学性的任何聚合物或共聚物。
图4的网状物300沿着传导性丝状物301的方向单一方向地传导电流。然而，这样的各向异性网状物不需要使传导性/不透明的和非传导性/透明的丝状物为相同的间距或横断面，或以1∶1的网状物编织，或使在期望传导方向上的每一丝状物都是传导性/不透明的材料。如果需要在升高的温度下，可以经由辊子(roller)把一卷这样的各向异性网状物展开并接合到一卷展开的衬底，以形成任何必需的嵌入且将各向异性网状物接合到衬底。
可以编织或分层网状物，并可以通过热处理和/或粘合剂在结点处连接。可以在编织后整平该网状物，诸如通过使该网状物经过一对压延辊(calandering roller)，可选地加热该压延辊，为了在金属-聚合物的交叉结点处使金属线部分地嵌入至聚合物链(strand)中。
该网状物可以部分嵌入至衬底中。取决于聚合物纤维和衬底(或顶层，如果衬底是层压板的话)相比较的熔化点，会产生不同情况。如果聚合物纤维的熔化或软化点基本高于衬底(或顶层，如果衬底是层压板的话)的熔化或软化点，聚合物纤维将会，与金属纤维一起，部分嵌入衬底中(或顶层中，如果衬底是层压板的话)而基本不变形。如果，另一方面，聚合物纤维的熔化或软化点基本低于衬底(或顶层，如果衬底是层压板的话)的熔化或软化点，只有金属纤维会基本嵌入衬底中(或顶层中，如果衬底是层压板的话)，且聚合物纤维会完全或部分熔化并基本变形，而不会达到大程度地嵌入衬底中(或顶层中，如果衬底是层压板的话)。在本发明的优选的实施方式中，聚合物纤维的熔化或软化点基本高于衬底(或顶层，如果衬底是层压板的话)的熔化或软化点。
参考图3A到3H，在其他的实施方式中，可以以其他方式敷高透射率传导材料：在“指状物”形成图案/沉积/嵌入/键合/等等之前，直接敷于衬底；就诸如各向异性网状物之类合适地独立的且预留间隔的“指状物”来说，在将“指状物”嵌入和/或键合到衬底之前，敷于“指状物”之间，要么仅在“指状物”之间，同时在“指状物”之间和在“指状物”的一侧之上，要么包起“指状物”，或其他方式；在形成图案/沉积/嵌入/键合/等等之后，敷在“指状物”之上，要么仅在“指状物”之间，或同时在“指状物”之间和“指状物”的顶部之上，要么包起“指状物”外露的部分，或其他方式；或者上述的任意组合。
在本实施方式中，其中现在公开的透明的各向异性传导性集电器是用于染料敏化太阳能电池(DSC)中的，它们可以使用在阳极上，阴极上，或设备的两侧上。
当使用在阳极，设备的所谓的“工作电极(WE)”侧上时，其中电子从光激敏化组成部分释放至介孔纳米结构的台架中，该介孔纳米结构的台架可能需要适当的低温处理以使其与所选的透明的各向异性传导性集电器和衬底材料相容。这样的低温处理可以通过，例如，利用分散在具有低温活性化互连作用剂的合适的低温可处理介质中的，适当的纳米高带隙半导体氧化物(例如，TiO2，ZnO，NB2O5等。)来实现。这样的材料和工艺在现有技术中是已知的。
当使用在阴极，设备的所谓的“相反电极(CE)”侧上时，其中电子从外部电路返回到设备，并经由电催化剂(electrocatalytic agent)与来自电解质的氧化的氧化还原类物(redox species)再结合，电催化剂可能需要适当的低温处理，以使其与所选的透明的各向异性传导性集电器和衬底材料相容。这样的低温工艺可以，例如，通过把透明的各向异性传导性集电器，例如通过喷射、滚涂、浸润、浸涂或液滴涂布等，来涂覆上适当的电催化剂化学前体的薄膜，结合对这些前体的适合的低温处理，以产生期望的电催化剂的形状和形态。一个实例就是：在低温下，通过合适的诸如硼氢化钠之类的还原剂，将六氯铂酸化学还原，以形成纳米铂簇电催化剂。也可以，例如，通过诸如铂、PEDOT、PEDOT:PSS、PEDOT:TMA或碳的溅射涂膜之类的物理气相沉积(PVD)来沉积电催化剂。进一步地，可以，例如，通过对PEDOT、PEDOT:PSS、PEDOT:TMA、碳或铂的合适的分散剂(dispersed formulation)进行刮片(doctor blading)、液滴涂布、旋涂等来涂覆或沉积电催化剂。
在一些实施方式中，网状物自身也可起衬底的作用。
在利用网状物的一些实施方式中，该网状物与透明电传导性层不相连。
这个公开利用染料敏化太阳能电池作为光电设备的例子，但这个发明的应用领域更加广泛，并且这个特定的例子的使用不会指示出本发明仅应用于染料敏化太阳能电池。本发明的实施方式可能应用于薄膜技术，碲化镉(CdTe)、铜铟硒/铜铟镓硒(CIS/CIGS)、非晶硅(α-Si)；硅基技术；和有机光伏。
注意虽然已示出高传导性元件(100)为圆形的横断面，不必限制这些元件的形状为圆柱形形状，且可能包括，比如椭圆形的、正方形的、矩形的、或任何其他的横断面外形。

Claims (20)

1.一种用于制造光电设备的导体组件，包括：
若干电传导性丝状物；
若干基本透明的丝状物；
其中，所述传导性和透明的丝状物连接在一起，以形成柔性的网状结构。
2.根据权利要求1所述的导体组件，其中所述网状结构为网状物的形式。
3.根据权利要求1或2所述的导体组件，其中所述传导性丝状物主要排列在第一方向上；而所述透明的丝状物主要排列在第二方向上。
4.根据权利要求3所述的导体组件，其中所述第一方向和所述第二方向基本相互直交。
5.根据上述任一项权利要求所述的导体组件，其中所述导体由包括铜、钛、钢、不锈钢；锡、铂、铅、铁、锰铜、康铜、银、金、铝、钨、镍、钼，及其合金中的任一项的材料构成，所述合金包括黄铜。
6.根据上述任一项权利要求所述的导体组件，其中所述基本透明的丝状物由诸如包括聚对苯二甲酸乙二醇酯或聚萘二甲酸乙二醇酯的聚酯、聚酰胺、包括聚丙烯的聚烯烃、聚醚酮、聚醚醚酮聚芳砜、聚醚砜、聚苯砜、聚氯乙烯或氟化聚合物之类的聚合物构成。
7.一种用于制造光电设备的子组件，包括：
柔性的、基本透明的衬底；
根据权利要求1至6中任一项所述的导体组件；和
一层透明电传导性材料，所述透明电传导性材料与所述衬底和所述导体组件相连。
8.根据权利要求7所述的子组件，其中所述导体至少部分嵌入所述衬底中。
9.根据权利要求7所述的子组件，其中所述导体用粘合剂粘贴到所述衬底。
10.根据权利要求7至9中任一项所述的子组件，其中所述导体是各向异性网状物的一部分。
11.根据权利要求7至10中任一项所述的子组件，其中所述导体组件的所述导体置于所述透明电传导性材料和所述衬底之间。
12.根据权利要求7至11中任一项所述的子组件，其中所述透明电传导性材料包括碳纳米管、掺锡氧化铟、掺氟氧化锡、掺杂或改性的氧化锡或氧化锌、聚(3，4-乙撑二氧噻吩)(PEDOT)、聚(3，4-乙撑二氧噻吩)-聚(苯乙烯磺酸)(PEDOT:PSS)、聚(3，4-乙撑二氧噻吩)-四甲基丙烯酸酯(PEDOT:TMA)、聚苯胺或聚吡咯中的任一项。
13.一种制造用于制造光电设备的子组件的方法，包括步骤：
提供根据权利要求1至6中任一项所述的导体组件；
提供柔性且基本透明的衬底；和
将所述导体组件和所述衬底相连。
14.根据权利要求13所述的方法，其中所述将所述导体组件和所述衬底相连的步骤包括将所述导体组件至少部分嵌入柔性衬底中的步骤。
15.根据权利要求14所述的方法，其中嵌入所述导体组件的步骤包含热处理。
16.根据权利要求13所述的方法，其中所述将所述导体组件和所述衬底相连的步骤包含使用粘合剂。
17.根据权利要求13至16中任一项所述的方法，其中所述导体组件从一卷中展开且所述子组件在连续的卷工艺中形成。
18.根据权利要求13至17中任一项所述的方法，还包括将一层透明电传导性材料与所述衬底相连的步骤。
19.根据权利要求18所述的方法，其中通过印刷或喷射工艺敷所述透明电传导性材料。
20.一种柔性光电设备，使用根据权利要求13至19中的任一项所述的子组件来制造。
CN2009801318339A 2008-08-12 2009-08-12 用于柔性光电和显示设备中的集电器系统和制造方法 Pending CN102203956A (zh)

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US7022910B2 (en) * 2002-03-29 2006-04-04 Konarka Technologies, Inc. Photovoltaic cells utilizing mesh electrodes
SE0103740D0 (sv) * 2001-11-08 2001-11-08 Forskarpatent I Vaest Ab Photovoltaic element and production methods
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US6936761B2 (en) * 2003-03-29 2005-08-30 Nanosolar, Inc. Transparent electrode, optoelectronic apparatus and devices
JP2005142090A (ja) * 2003-11-07 2005-06-02 Ngk Spark Plug Co Ltd 色素増感型太陽電池
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Application publication date: 20110928