JP5656975B2 - 光電デバイスおよびその製造方法 - Google Patents
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- JP5656975B2 JP5656975B2 JP2012507172A JP2012507172A JP5656975B2 JP 5656975 B2 JP5656975 B2 JP 5656975B2 JP 2012507172 A JP2012507172 A JP 2012507172A JP 2012507172 A JP2012507172 A JP 2012507172A JP 5656975 B2 JP5656975 B2 JP 5656975B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/18—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
- Composite Materials (AREA)
Description
- 第1の電極と第2の電極との間に光電活性材料(optoelectric active material)の層を設けるステップと、
- パターン化電気絶縁層構造を前記電極の少なくとも1つに設けるステップであって、パターン化電気絶縁層が開口部を有するステップと、
- 前記開口部に電解液を提供するステップと、
- 金属層を前記開口部に電解液から電気めっきにより堆積させるステップと
を含む、光電デバイスを製造するための方法であって、
電解液がイオン液体により形成されることを特徴とする方法が提供される。
20 導電層
22 第1の電極、第1の部分
24 第2の部分
32 第2の電極、カソード、前記電極の少なくとも1つ
40 基板
60 パターン化電気絶縁層構造、電気絶縁層構造
62 開口部
70 イオン液体、電解液
72 電池
74 補助電極
80 金属層、金属構造
90 バリア層構造
110 光電活性材料のさらなる層、光起電力層、エレクトロクロミック層
120 さらなる導電層、金属層
122 第1のさらなる電極
124 部分
132 第2のさらなる電極
Claims (11)
- −第1の電極と第2の電極との間に光電活性材料の層を設けるステップ(S1)と、
−パターン化電気絶縁層構造を前記電極の少なくとも1つの上に設けるステップであって、前記パターン化電気絶縁層が開口部を有するステップ(S2)と、
−前記開口部に電解液を提供するステップ(S3)と、
−金属層を前記開口部に前記電解液から電気めっきにより堆積させるステップ(S4)とを含む、光電デバイスを製造するための方法であって、
前記電解液がイオン液体により形成されることを特徴とする方法。 - 前記パターン化電気絶縁層構造は、第1バリア層構造である、請求項1に記載の方法。
- 前記パターン化電気絶縁層構造は、シャドウマスクにより規定されることを特徴とする、請求項1または2に記載の方法。
- 前記パターン化電気絶縁層構造は、印刷技法で規定される、請求項1に記載の方法。
- 第2バリア層構造が、前記金属層の上部上に付与される、請求項1または2に記載の方法。
- 第1のさらなる電極と第2のさらなる電極との間に挟まれる光電活性材料のさらなる層が設けられ、前記第1のさらなる電極が、前記金属層が設けられる前記パターン化電気絶縁層構造上に付与される、請求項1に記載の方法。
- −第1の電極(22)と第2の電極(32)との間の光電活性材料の層(10)と、
−前記電極の少なくとも1つ(32)の上にあり、開口部(62)を有するパターン化電気絶縁層構造(60)と、
−前記パターン化電気絶縁層構造(60)の上にあり、前記パターン化電気絶縁層の前記開口部(62)を通って前記電極の前記少なくとも1つ(32)に延在し、それによって、前記電極の前記少なくとも1つ(32)に直接接触する金属構造(80)と
を含み、
前記金属構造(80)は、イオン液体を用いる電気めっきにより形成されたことを特徴とする光電デバイス。 - 光電活性材料のさらなる層(110)が第3の電極(122)と第4の電極(132)との間にある積層体を含み、前記積層体(110、132、122)が、前記金属構造(80)が設けられる前記パターン化電気絶縁層構造(60)上に配置される、請求項7に記載の光電デバイス。
- 光電活性材料の前記層(10)および光電活性材料の前記さらなる層(110)の両方が、発光層である、請求項8に記載の光電デバイス。
- 光電活性材料の前記層(10)が発光層であり、光電活性材料の前記さらなる層(110)が光起電力層である、請求項8に記載の光電デバイス。
- 光電活性材料の前記層(10)が発光層であり、光電活性材料の前記さらなる層(110)がエレクトロクロミック層である、請求項8に記載の光電デバイス。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09158618A EP2244317A1 (en) | 2009-04-23 | 2009-04-23 | Optoelectric device and method for manufacturing the same |
| EP09158618.0 | 2009-04-23 | ||
| PCT/NL2010/050221 WO2010123362A1 (en) | 2009-04-23 | 2010-04-23 | Optoelectric device and method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012524973A JP2012524973A (ja) | 2012-10-18 |
| JP5656975B2 true JP5656975B2 (ja) | 2015-01-21 |
Family
ID=40849043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012507172A Expired - Fee Related JP5656975B2 (ja) | 2009-04-23 | 2010-04-23 | 光電デバイスおよびその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20120074454A1 (ja) |
| EP (2) | EP2244317A1 (ja) |
| JP (1) | JP5656975B2 (ja) |
| KR (1) | KR20120028887A (ja) |
| CN (1) | CN102439751B (ja) |
| WO (1) | WO2010123362A1 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0920986D0 (en) * | 2009-12-01 | 2010-01-13 | Lumicure Ltd | Substrate patterning |
| DE102012222760A1 (de) * | 2012-12-11 | 2014-06-12 | Osram Opto Semiconductors Gmbh | Abdunkelbare spiegelvorrichtung |
| KR101407590B1 (ko) * | 2012-11-19 | 2014-06-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
| KR102651543B1 (ko) * | 2015-12-10 | 2024-03-28 | 삼성전자주식회사 | 광 전자 장치와 이를 포함하는 스마트 윈도우 |
| GB2547029B (en) * | 2016-02-05 | 2019-11-06 | Cambridge Display Tech Ltd | Methods of manufacturing electrodes by in-situ electrodeposition and devices comprising said electrodes |
| WO2017133104A1 (zh) * | 2016-02-06 | 2017-08-10 | 无锡威迪变色玻璃有限公司 | 电致变色结构及其形成方法 |
| CN108615751A (zh) * | 2018-05-30 | 2018-10-02 | 信利光电股份有限公司 | 一种显示模组 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6844957B2 (en) * | 2000-11-29 | 2005-01-18 | International Business Machines Corporation | Three level stacked reflective display |
| DE10258712B4 (de) * | 2002-12-12 | 2005-03-17 | Samsung SDI Co., Ltd., Suwon | Bauelement für ein Aktiv-Matrix-OLED-Display mit integrierter Energieerzeugung |
| US6975067B2 (en) * | 2002-12-19 | 2005-12-13 | 3M Innovative Properties Company | Organic electroluminescent device and encapsulation method |
| US6812637B2 (en) * | 2003-03-13 | 2004-11-02 | Eastman Kodak Company | OLED display with auxiliary electrode |
| US7250728B2 (en) * | 2004-04-21 | 2007-07-31 | Au Optronics | Bottom and top emission OLED pixel structure |
| JP4027914B2 (ja) * | 2004-05-21 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 照明装置及びそれを用いた機器 |
| EP1932194A2 (en) * | 2005-09-28 | 2008-06-18 | Koninklijke Philips Electronics N.V. | A large area organic diode device and a method of manufacturing it |
| US20070131949A1 (en) * | 2005-12-12 | 2007-06-14 | General Electric Company | Color tunable light-emitting devices and method of making the same |
| US20070132371A1 (en) * | 2005-12-12 | 2007-06-14 | General Electric Company | Color tunable light-emitting devices and method of making the same |
| KR100732849B1 (ko) * | 2005-12-21 | 2007-06-27 | 삼성에스디아이 주식회사 | 유기 발광 표시장치 |
| GB2437112B (en) * | 2006-04-11 | 2011-04-13 | Nicholas Jim Stone | A method of making an electrical device |
| EP1876657A1 (en) * | 2006-07-07 | 2008-01-09 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Process for making patterned conductive layers |
| DE102007004509A1 (de) * | 2006-11-23 | 2008-05-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Beleuchtungselement und Verfahren zu seiner Herstellung |
| EP1983592A1 (en) * | 2007-04-17 | 2008-10-22 | Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO | Method for manufacturing an electrode |
| EP1983079A1 (en) * | 2007-04-17 | 2008-10-22 | Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO | Barrier layer and method for making the same |
| JP2009081298A (ja) * | 2007-09-26 | 2009-04-16 | Fujifilm Corp | 撮像素子及び撮像装置 |
| US20090079345A1 (en) * | 2007-09-26 | 2009-03-26 | Fujifilm Corporation | Light emitting/receiving element |
-
2009
- 2009-04-23 EP EP09158618A patent/EP2244317A1/en not_active Withdrawn
-
2010
- 2010-04-23 EP EP10718308.9A patent/EP2422383B1/en not_active Not-in-force
- 2010-04-23 US US13/265,855 patent/US20120074454A1/en not_active Abandoned
- 2010-04-23 KR KR1020117027970A patent/KR20120028887A/ko not_active Abandoned
- 2010-04-23 JP JP2012507172A patent/JP5656975B2/ja not_active Expired - Fee Related
- 2010-04-23 WO PCT/NL2010/050221 patent/WO2010123362A1/en not_active Ceased
- 2010-04-23 CN CN201080022739.2A patent/CN102439751B/zh not_active Expired - Fee Related
-
2014
- 2014-03-18 US US14/218,276 patent/US20140197424A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012524973A (ja) | 2012-10-18 |
| EP2422383B1 (en) | 2016-11-30 |
| CN102439751B (zh) | 2016-01-06 |
| EP2422383A1 (en) | 2012-02-29 |
| US20120074454A1 (en) | 2012-03-29 |
| US20140197424A1 (en) | 2014-07-17 |
| KR20120028887A (ko) | 2012-03-23 |
| CN102439751A (zh) | 2012-05-02 |
| EP2244317A1 (en) | 2010-10-27 |
| WO2010123362A1 (en) | 2010-10-28 |
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