CN102193010A - Film-type probe unit and manufacturing method thereof - Google Patents

Film-type probe unit and manufacturing method thereof Download PDF

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Publication number
CN102193010A
CN102193010A CN2011100309948A CN201110030994A CN102193010A CN 102193010 A CN102193010 A CN 102193010A CN 2011100309948 A CN2011100309948 A CN 2011100309948A CN 201110030994 A CN201110030994 A CN 201110030994A CN 102193010 A CN102193010 A CN 102193010A
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China
Prior art keywords
contact
probe unit
type probe
wire
membranous type
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Pending
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CN2011100309948A
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Chinese (zh)
Inventor
金宪敏
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Kodi S Co Ltd
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Kodi S Co Ltd
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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The invention relates to a film-type probe unit and a method for manufacturing the same, specifically to a film-type probe unit comprising a probe plate that is formed solely with the same pitch as the electrodes of the object to be tested and showing excellent contact performance though the electrodes have a micron distance therebetween and a method for manufacturing the same. The film-type probe unit comprises: a probe plate provided with patterning leads formed on an insulation film, wherein part of the patterning leads can be contacted with the object to be tested as contacts; and a main body block, wherein the probe plate is arranged on the bottom of the main body block. The contacts are formed in two or more rows.

Description

Membranous type probe unit and manufacture method thereof
Background technology
1. invention field
The present invention relates to membranous type probe unit and manufacture method thereof, more specifically, even relate to membranous type probe unit and the manufacture method thereof that comprises the probe card that forms separately with the spacing identical and when electrode has the micro-meter scale spacing, still show fabulous contact performance with the electrode of object to be tested.
2. prior art
Generally, the process of manufacturing panel display apparatus or semiconductor device relates to some electrical testings.
For panel display apparatus, this process is included between thin film transistor (TFT) (TFT) substrate and the color filter substrate element process of injecting liquid crystal, belt is engaged automatically (TAB) integrated circuit (IC) and chip for driving is attached to the module process of element and framework is installed in instrumentation on the module, wherein before module process element is carried out electrical testing.
More specifically, before the process of the electrode that forms on the pad that TAB IC is attached to element (being object to be tested), test by the electrode that test signal is applied to the element that is electrically connected to TAB IC temporarily, and if element by the test then carry out module process.
Probe unit is used to carry out this electrical testing.Conventional probe unit comprise the electrode of the electrode of main body block, Connection Element and TAB IC sheet, be electrically connected to sheet TAB IC, flexible PCB, be electrically connected to the printed circuit board (PCB) of flexible PCB etc.
Particularly, conventional probe unit is applied to the electrode that temporarily is located in object to be tested and the sheet between the TAB IC with electric signal, and object to be tested and TAB IC interconnect the most at last.The sheet that folder is established can improve contact performance, but often causes the loss of electric signal, makes the electric signal that is applied may not be sent to electrode fully.In addition, the problem at manufacture view is must make sheet and sheet separately to have the micro-meter scale spacing.
In order to overcome this problem, applicant of the present invention proposes Korean Patent No.720378.With reference to figure 1, improved probe unit 1 comprises main body block 10, TAB IC 20 and flexible PCB 40.Supporting member 30 is attached to the one side of TAB IC 20, makes the contact on TAB IC 20 one side can flexibly press to the electrode of object to be tested.The printed circuit board (PCB) (not shown) is electrically connected to an end of flexible PCB 40.Thereby probe unit 1 does not have sheet.In other words, TAB IC 20 is directly contacted with the electrode of object to be tested.As a result, might overcome the problems referred to above.
With reference to figure 2, TAB IC 20 has the patterning lead-in wire 23 that is formed on the dielectric film 21, and some patterning lead-in wires 23 are as the contact 23a that will contact with the electrode of object to be tested.Flexible PCB is provided with connector 24 and the chip for driving 22 that is used to be electrically connected.Obviously, contact 23a and electrode are in contact with one another one to one.
Fig. 3 illustrates the contact 23a of the TAB IC 20 that contacts with the pad 50 of object L to be tested.As shown in the figure, as can be seen, the centre in the contact region, each contact 23a is the electrode 51 of contact pad 50 (referring to amplifying circle) substantially accurately.
Yet, the right part in the contact region, the centre of contact 23a out of true ground contact electrode 51 and the left side of deviating electrode 51 (referring to the amplification circle of right part).
Equally, the left part in the contact region, the centre of contact 23a out of true ground contact electrode 51 and the right side of deviating electrode 51 (referring to the amplification circle of left part).
The spacing P1 of the contact 23a that this reason behind is TAB IC is less than the spacing P2 of the electrode of the pad 50 of object to be tested (P2>P1).
This phenomenon takes place inevitably.When test is finished and implement module process, the contact of TAB IC by be positioned at contact on the pad and carry out hot pressing and be electrically connected to pad.In this case, expand in the spacing that applies hot back contact.Therefore, if the spacing of contact is initial identical with the electrode separation of pad, then the spacing of contact makes the spacing of contact depart from the electrode separation of pad owing to the heat that applies for connection expands.Consider the expansion of electrode separation, make the spacing of contact form electrode separation less than pad.
Thereby, when the TAB IC with little electrode separation is directly contacted with the pad of object to be tested, existing problems aspect contact performance.That is, because the spacing of the contact of formed TAB IC is different with the spacing of the pad electrode of object to be tested, so the contact performance deterioration makes contacting one to one between the contact be difficult to realize TAB IC and the pad electrode.
In order to address this problem, the method for the electrode separation of the TAB IC that proposed to have a mind to expand.For example, with reference to figure 4, clamp this dielectric film in the relative both sides of the dielectric film with contact 123a and be pulled outwardly so that contact 123a expansion by clip G.
If have a mind to expand the electrode separation of TAB IC, then the spacing P3 of expanding contact 123a is with contact (referring to Fig. 5) one to one on pad.That is, not only in the middle of the contact region but also in its right side and left side, each contact 123a contact (justifying referring to amplifying) with the center of the electrode 51 of pad.
In other words, the spacing of contact 123a is expanded, and makes can become spacing P3 identical or basic identical (P2=P3) with the contact of the electrode separation P2 of pad.
Yet still the problem of Cun Zaiing is to be difficult to obtain the accurate expansion of the contact spacing of TAB IC to desired spacing.
Summary of the invention
The present invention is to address the above problem in design, and one aspect of the present invention provides membranous type probe unit and manufacture method thereof, even it comprises the probe card that forms separately with the spacing identical with the electrode of object to be tested and still show fabulous contact performance when electrode has the micro-meter scale spacing.
According to an aspect, the membranous type probe unit comprises: probe card, and it has the patterning that is formed on the dielectric film and goes between to allow some patternings lead-in wires to come as the contact and tested object is contacted; And main body block, this probe card is arranged on the bottom of this main body block.The contact forms two row or multirows more.
Each row contact can alternately form.
Other regional area of the comparable patterning lead-in wire of the area of contact is greatly with the contact performance of raising with object.
Can insulate in patterning lead-in wire other zone except that the contact.
The one side of dielectric film can be provided with the chip for driving that is used for driven object.
Chip for driving can be installed in and will be attached on the TAB IC of finished product of object.
Some patterning lead-in wires can be formed on the back side of contact one side formed thereon in order to avoid pass through between the contact.
The patterning lead-in wire that is formed on the back side can be connected to the contact via passing the film formed hole of insulation.
According to another aspect, the method for making the membranous type probe unit comprises: form the patterning lead-in wire on dielectric film; Make except that will with the patterning lead wire insulation the contact that the electrode of object to be tested contacts; Be installed in by the chip for driving that will be used for driven object and make probe card on the dielectric film; And probe card is fixed on the main body block.
Chip for driving can be installed in and will be attached on the TAB IC of finished product of object.
The spacing of contact can be identical with the spacing of the electrode of object.
The contact can form two row or multirows more.
Each row contact can alternately form.
Some patterning lead-in wires can be formed on the back side of contact one side formed thereon in order to avoid pass through between the contact.
The patterning lead-in wire that is formed on the back side can be connected to the contact via passing the film formed hole of insulation.
The accompanying drawing summary
According to the following description of the exemplary embodiment that provides in conjunction with appended accompanying drawing, above and other aspect of the present invention, feature and advantage will become apparent, wherein:
Fig. 1 to 5 illustrates conventional membranous type probe unit and manufacture method thereof; And
Fig. 6 to 10 illustrates membranous type probe unit and the manufacture method thereof according to exemplary embodiment of the present invention.
Embodiment
Be described referring now to the exemplary embodiment of accompanying drawing invention.
With reference to figure 6, membranous type probe unit according to exemplary embodiment comprises probe card, this probe card is exclusively used in test and makes separately rather than belt that aftertreatment (for example, expansion etc.) is attached to the finished product of object to be tested engages (TAB) integrated circuit (IC) automatically.
The method of making probe card 220 is included in and forms patterning lead-in wire 222 on the dielectric film 221, and some of them patterning lead-in wire 222 is used as contact 222a to contact with the pad 50 of object to be tested.In this embodiment, each top of patterning lead-in wire 222 is as contact 222a.Certainly, contact 222a is formed have the spacing identical with the electrode 51a of object.Then, the patterning lead-in wire 222 except that the 222a of contact is insulated.At last, probe card 220 is fixed to main body block 10 (referring to Fig. 1).In order to improve contact performance, the area of contact 222a is bigger than other zone of patterning lead-in wire 222.
In addition, probe card 220 can have the chip for driving that will be installed on the TAB IC of embedding, and the TAB IC that chip for driving perhaps is installed can be connected to the rear end of probe card 220.
With reference to figure 7 and 8, can have contact 323a, the 323b that form two row according to the probe card 320 of an embodiment.In this case, contact 323a, 323b alternately arrange, and make the lead pattern 323 that will be connected to the first row contact 323a not disturb the second row contact 323b.Perhaps, can have the triplex row of forming or the contact of multirow more according to the probe card of this embodiment.
The first column electrode 51a of object to be tested is contacted with the second row contact 323b with the first row contact 323a of probe card 320 respectively with the second column electrode 51b.In this state, come the electricity tested object by apply test signal to it.
With reference to figure 9 and 10, if contact 422a, the 423a of probe card 420 are formed two row, then form the patterning lead-in wire 423 of the first row contact 423a can be between the second row contact 422a process, thereby cause short circuit.In order to prevent short circuit, some patterning lead-in wire 423b are formed on the back side of second row contact 422a one side formed thereon, in order to avoid pass through between the second row contact 422a.
Particularly, the patterning lead-in wire 423 that forms the first row contact 423a is divided at lead pattern 423c on the one side of dielectric film 421 and the lead pattern 423b on the another side of dielectric film 421, and these lead patterns are electrically connected mutually via the hole 111 and 112 of passing dielectric film 421 formation.
According to embodiment, even when the electrode of object to be tested has the micro-meter scale spacing, also can improve contact performance.
In addition, make the probe card identical separately, thereby improve contact performance with the electrode separation of object to be tested.
In addition, even when the electrode of object to be tested has the micro-meter scale spacing, test signal also can put on this and not short circuit fully.
Though in the disclosure, described some embodiment, provide these embodiment in the explanation mode for those of ordinary skills, and can to make various modifications and change and not deviate from the spirit and scope of the present invention be conspicuous.Scope of the present invention should only be limited by claims and its equivalents.

Claims (15)

1. membranous type probe unit comprises:
Probe card has the patterning lead-in wire that is formed on the dielectric film and contacts with object to be tested as the contact to allow some patternings lead-in wires, and described contact forms two and goes or multirow more; And
Main body block, described probe card is arranged on the bottom of described main body block.
2. membranous type probe unit as claimed in claim 1 is characterized in that, described each row contact alternately forms.
3. membranous type probe unit as claimed in claim 1 is characterized in that, the area of described contact than other regional area of patterning lead-in wire greatly to improve the contact performance with described object.
4. membranous type probe unit as claimed in claim 1 is characterized in that, insulate in described patterning lead-in wire other zone except that described contact.
5. membranous type probe unit as claimed in claim 2 is characterized in that the one side of described dielectric film is provided with the chip for driving that is used to drive described object.
6. membranous type probe unit as claimed in claim 1 is characterized in that, described chip for driving is installed in the belt that will be attached to the finished product of described object and engages automatically on (TAB) integrated circuit (IC).
7. membranous type probe unit as claimed in claim 2 is characterized in that, some patterning lead-in wires are formed on the back side of described contact one side formed thereon in order to avoid pass through between described contact.
8. membranous type probe unit as claimed in claim 7 is characterized in that, the patterning lead-in wire that is formed on the described back side is connected to described contact via passing the film formed hole of described insulation.
9. method of making the membranous type probe unit, described method comprises:
On dielectric film, form the patterning lead-in wire;
Make except that will with the patterning lead wire insulation the contact that the electrode of object to be tested contacts;
Be installed on the described dielectric film by the chip for driving that will be used to drive described object and make probe card; And
Described probe card is fixed on the main body block.
10. method as claimed in claim 9 is characterized in that, described chip for driving is installed in the belt that will be attached to finished product and engages automatically on (TAB) integrated circuit (IC).
11. method as claimed in claim 9 is characterized in that, the spacing of described contact is identical with the spacing of the electrode of described object.
12. method as claimed in claim 9 is characterized in that, described contact forms two row or multirows more.
13. method as claimed in claim 9 is characterized in that, described each row contact alternately forms.
14. method as claimed in claim 9 is characterized in that, some patterning lead-in wires are formed on the back side of described contact one side formed thereon in order to avoid pass through between described contact.
15. method as claimed in claim 14 is characterized in that, the patterning lead-in wire that is formed on the described back side is connected to described contact via passing the film formed hole of described insulation.
CN2011100309948A 2010-01-22 2011-01-21 Film-type probe unit and manufacturing method thereof Pending CN102193010A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20100005869 2010-01-22
KR10-2010-0005869 2010-01-22
KR20100007403 2010-01-27
KR10-2010-0007403 2010-01-27

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CN102193010A true CN102193010A (en) 2011-09-21

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CN (1) CN102193010A (en)
TW (1) TWI465727B (en)

Cited By (4)

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CN104360510A (en) * 2014-11-24 2015-02-18 合肥鑫晟光电科技有限公司 Probe block used for detection and detection device thereof
CN104422800A (en) * 2013-09-09 2015-03-18 吉佳蓝科技股份有限公司 Probe unit for testing panel with micro-span array
CN111129090A (en) * 2019-12-18 2020-05-08 武汉华星光电半导体显示技术有限公司 Display panel and test method thereof
CN116990656A (en) * 2023-09-27 2023-11-03 苏州朗之睿电子科技有限公司 Test piece for semiconductor tester and preparation method thereof

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KR101272493B1 (en) 2012-11-08 2013-06-10 주식회사 프로이천 Film type probe card

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JP2004325319A (en) * 2003-04-25 2004-11-18 Toray Eng Co Ltd Probe device
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CN101294984A (en) * 2007-04-27 2008-10-29 日本麦可罗尼克斯股份有限公司 Probe apparatus and detection apparatus
CN101308820A (en) * 2004-04-09 2008-11-19 株式会社瑞萨科技 Manufacturing method of semiconductor integrated circuit device and probe card
JP2009122123A (en) * 2009-03-05 2009-06-04 Yokowo Co Ltd Contact probe

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TW201003880A (en) * 2008-05-30 2010-01-16 Advanced Micro Devices Inc Semiconductor device comprising a chip internal electrical test structure allowing electrical measurements during the fabrication process
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JP2004325319A (en) * 2003-04-25 2004-11-18 Toray Eng Co Ltd Probe device
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CN1654964A (en) * 2005-03-16 2005-08-17 胜华科技股份有限公司 Contact film probe and manufacturing method thereof
CN101294984A (en) * 2007-04-27 2008-10-29 日本麦可罗尼克斯股份有限公司 Probe apparatus and detection apparatus
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Cited By (9)

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Publication number Priority date Publication date Assignee Title
CN104422800A (en) * 2013-09-09 2015-03-18 吉佳蓝科技股份有限公司 Probe unit for testing panel with micro-span array
CN104422800B (en) * 2013-09-09 2017-11-21 宇德曼斯有限公司 For testing the probe unit of the panel with micro- pitch arrays
CN104360510A (en) * 2014-11-24 2015-02-18 合肥鑫晟光电科技有限公司 Probe block used for detection and detection device thereof
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CN111129090A (en) * 2019-12-18 2020-05-08 武汉华星光电半导体显示技术有限公司 Display panel and test method thereof
CN111129090B (en) * 2019-12-18 2022-05-31 武汉华星光电半导体显示技术有限公司 Display panel and test method thereof
US11379062B2 (en) 2019-12-18 2022-07-05 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel and testing method thereof
CN116990656A (en) * 2023-09-27 2023-11-03 苏州朗之睿电子科技有限公司 Test piece for semiconductor tester and preparation method thereof
CN116990656B (en) * 2023-09-27 2023-12-12 苏州朗之睿电子科技有限公司 Test piece for semiconductor tester and preparation method thereof

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TWI465727B (en) 2014-12-21
TW201142306A (en) 2011-12-01
JP2011149938A (en) 2011-08-04

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