CN102185055A - Light-emitting diode and manufacturing method thereof - Google Patents
Light-emitting diode and manufacturing method thereof Download PDFInfo
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- CN102185055A CN102185055A CN 201110108388 CN201110108388A CN102185055A CN 102185055 A CN102185055 A CN 102185055A CN 201110108388 CN201110108388 CN 201110108388 CN 201110108388 A CN201110108388 A CN 201110108388A CN 102185055 A CN102185055 A CN 102185055A
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Abstract
The invention discloses a light-emitting diode and a manufacturing method thereof. The light-emitting diode comprises a substrate, a buffering layer, a non-doped layer, an n type semiconductor layer, an active layer, a p type semiconductor layer, a current diffusion layer, a first insertion layer and/or a second insertion layer, wherein the buffering layer, the non-doped layer, the n type semiconductor layer, the active layer, the p type semiconductor layer and the current diffusion layer are positioned on the substrate; the first insertion layer is arranged in the n type semiconductor layer; and the second insertion layer is arranged between the n type semiconductor layer and the active layer. The first insertion layer and the second insertion layer consist of at least one layer of non-doped AlxInyGa1-x-yN layer and/or at least one layer of Si-doped AlxInyGa1-x-yN layer, wherein x and y are more than or equal to 0 and less than 0.2. When current is injected into an n type area, the insertion layers play a role of buffering to prevent electrons from diffusing into a p type area, so the conformity efficiency of the electrons and holes is improved and then the illumination brightness of the light-emitting diode is improved. In addition, the insertion layers can achieve the effect similar to charging and discharging, so the anti-static ability of materials is effectively improved.
Description
Technical field
The present invention relates to the semiconductor light emitting field, particularly relate to a kind of light-emitting diode and manufacture method thereof.
Background technology
Light-emitting diode (LED, Light Emitting Diode) is applied to various fields owing to have long, advantage such as power consumption is low of life-span, especially day by day significantly improves along with its illumination performance index, and LED is commonly used for light-emitting device at lighting field.Wherein, be the III-V compound semiconductor of representative with gallium nitride (GaN) because have that band gap is wide, luminous efficiency is high, characteristics such as electronics saturation drift velocity height, chemical property are stable, in field of optoelectronic devices such as high brightness blue light-emitting diode, blue lasers huge application potential is arranged, caused people's extensive concern.At present, general LED structure has adopted at p type semiconductor layer (normally p type nitride such as p type gallium nitride) direct growth current-diffusion layer (Spreading layer) afterwards, for example indium gallium nitride layer (InGaN layer) or indium tin oxide layer (ITO layer), traditional gallium nitride based LED can be because the distribution of the low current in the p type semiconductor layer meet with inhomogeneous light radiation.General, this shortcoming can be overcome by the interdigitated electrode arrays of translucent contact layer or device transverse current.
Yet, in traditional LED structural design, because the high relatively resistance of p type nitride itself caused the dispersion of its electric current to have jam, electric current mainly concentrate on can not be effectively luminous p type electrode under, thereby caused the decline of luminous inhomogeneous and luminous efficiency.The solution of current main proposition is the current-diffusion layer (as ITO or Ni/Au) of deposit transparent on p type nitride for this reason, so that electric current is diffused into the light-emitting zone outside the electrode as much as possible; Perhaps, the direct gallium nitride of growing n-type on p section bar material form the structure of tunnel junction with the high conductivity of utilizing the n type, but this is not obtained desirable effect.
The CN101694858A patent has proposed a kind of LED epitaxial structure and manufacture method thereof, and this structure is inserted by plain Al in the middle of luminescent layer and p type nitride layer
xIn
yGa
1-x-yN layer and p type Al
xIn
yGa
1-x-yThe insert layer that the n layer alternately constitutes has played protective effect for the ESD barrier propterty of material, and do not reduced other performances of material, but obvious effects is not played in its even diffusion for electric current.
The CN101183642A patent has proposed a kind of preparation method of p-GaN low resistance ohmic contact, this method is used the top layer of p-InGaN/p-AlGaN superlattice layer as p-GaN, with the reduction contact resistance, but this method does not play desirable effect for the even diffusion of electric current yet.
Summary of the invention
The invention provides a kind of light-emitting diode and manufacture method thereof, improving the opposing electrostatic capacity of material, and improve the efficient that electric current dispersed uniform and electronics inject.
For solving the problems of the technologies described above, the invention provides a kind of light-emitting diode, comprising: substrate; And be positioned at the resilient coating on the described substrate, non-layer, n type semiconductor layer, active layer, p type semiconductor layer and the current-diffusion layer mixed; Also comprise first insert layer that is arranged at described n type semiconductor layer inside and/or be arranged at second insert layer between described n type semiconductor layer and the active layer that wherein, described first insert layer and second insert layer are by the non-doped with Al of one deck at least
xIn
yGa
1-x-yThe N layer and/or at least one deck mix the Al of Si
xIn
yGa
1-x-yThe N layer constitutes, 0≤x＜0.2,0≤y＜0.2.
Optionally, in described light-emitting diode, described first insert layer is by non-doped with Al more than two
xIn
yGa
1-x-yN layer and mix the Al of Si more than two
xIn
yGa
1-x-yThe N layer alternately constitutes.
Optionally, in described light-emitting diode, described second insert layer is by non-doped with Al more than two
xIn
yGa
1-x-yN layer and mix the Al of Si more than two
xIn
yGa
1-x-yThe N layer alternately constitutes.
Optionally, in described light-emitting diode, also comprise: the degree of depth extends to the opening of described n type semiconductor layer; Be formed at the n type electrode in the described opening, described n type semiconductor layer is electrically connected with a power cathode by described n type electrode; Be formed at the p type electrode on the described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by described p type electrode.
Optionally, in described light-emitting diode, also comprise: be formed at described substrate away from the lip-deep n type of described n type semiconductor layer electrode, described n type semiconductor layer is electrically connected with a power cathode by described n type electrode; Be formed at the p type electrode on the described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by described p type electrode.
Accordingly, the present invention also provides a kind of method for manufacturing light-emitting, comprising: a substrate is provided; On described substrate, form resilient coating, non-layer, n type semiconductor layer, active layer, p type semiconductor layer and the current-diffusion layer mixed; Method for manufacturing light-emitting is included in also that described n type semiconductor layer is inner to be formed first insert layer and/or form second insert layer between described n type semiconductor layer and active layer, and wherein, described first insert layer and second insert layer are by the non-doped with Al of one deck at least
xIn
yGa
1-x-yThe N layer and/or at least one deck mix the Al of Si
xIn
yGa
1-x-yLayer constitutes, 0≤x＜0.2,0≤y＜0.2.
Optionally, in described method for manufacturing light-emitting, described first insert layer is by non-doped with Al more than two
xIn
yGa
1-x-yN layer and mix the Al of Si more than two
xIn
yGa
1-x-yThe N layer alternately constitutes.
Optionally, in described method for manufacturing light-emitting, described second insert layer is by non-doped with Al more than two
xIn
yGa
1-x-yN layer and mix the Al of Si more than two
xIn
yGa
1-x-yThe N layer alternately constitutes.
Optionally, in described method for manufacturing light-emitting, also comprise: form the opening that the degree of depth extends to described n type semiconductor layer; Form n type electrode in described opening, described n type semiconductor layer is electrically connected with a power cathode by described n type electrode; Form p type electrode on described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by described p type electrode.
Optionally, in described method for manufacturing light-emitting, also comprise: form n type electrode at described substrate on away from the surface of described n type semiconductor layer, described n type semiconductor layer is electrically connected with a power cathode by described n type electrode; Form p type electrode on described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by described p type electrode.
Compared with prior art, light-emitting diode of the present invention also comprises first insert layer that is arranged at n type semiconductor layer inside and/or is arranged at second insert layer between n type semiconductor layer and the active layer, wherein, described first insert layer and second insert layer are by the non-doped with Al of one deck at least
xIn
yGa
1-x-yThe N layer and/or at least one deck mix the Al of Si
xIn
yGa
1-x-yThe N layer constitutes, wherein 0≤x＜0.2,0≤y＜0.2.When n type zone electric current injected, described insert layer can play the effect of buffering, prevents that electrons spread from arriving p type zone, improved the efficient that meets in electronics and hole, thereby improved the luminosity of light-emitting diode; In addition, described insert layer can form the similar effect that discharges and recharges, thereby effectively raises the ability of material opposing static.
Description of drawings
Fig. 1 is the light-emitting diode structure schematic diagram of the embodiment of the invention one;
Fig. 2 A is the schematic diagram of first insert layer of light-emitting diode shown in Figure 1;
Fig. 2 B is the schematic diagram of second insert layer of light-emitting diode shown in Figure 1
Fig. 3 is the light-emitting diode structure schematic diagram of the embodiment of the invention two;
Fig. 4 is the light-emitting diode structure schematic diagram of the embodiment of the invention three.
Embodiment
Core concept of the present invention is, a kind of light-emitting diode and manufacture method thereof are provided, and described light-emitting diode comprises substrate and is positioned at the resilient coating on the described substrate, non-layer, n type semiconductor layer, active layer, p type semiconductor layer and the current-diffusion layer mixed; In addition, described light-emitting diode also comprises first insert layer that is arranged at described n type semiconductor layer inside and/or is arranged at second insert layer between described n type semiconductor layer and the active layer, wherein, described first insert layer and second insert layer are by the non-doped with Al of one deck at least
xIn
yGa
1-x-yThe N layer and/or at least one deck mix the Al of Si
xIn
yGa
1-x-yThe N layer constitutes, 0≤x＜0.2,0≤y＜0.2.When n type zone electric current injected, described insert layer can play the effect of buffering, prevents that electrons spread from arriving p type zone, improved the efficient that meets in electronics and hole, thereby improved the luminosity of light-emitting diode; In addition, described insert layer can form the similar effect that discharges and recharges, thereby effectively raises the ability of material opposing static.
Below in conjunction with the drawings and specific embodiments light-emitting diode and the manufacture method thereof that the present invention proposes is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only be used for conveniently, the purpose of the aid illustration embodiment of the invention lucidly.
Embodiment one
In the present embodiment, described light-emitting diode is provided with first insert layer in n type semiconductor layer inside, and, between described n type semiconductor layer and active layer, be provided with second insert layer.
Please refer to Fig. 1, Fig. 2 A and Fig. 2 B, wherein, Fig. 1 is the light-emitting diode structure schematic diagram of the embodiment of the invention one, and Fig. 2 A is the schematic diagram of first insert layer of light-emitting diode shown in Figure 1, and Fig. 2 B is the schematic diagram of second insert layer of light-emitting diode shown in Figure 1.
As shown in Figure 1, be example with gallium nitrate based blue light diode, described light-emitting diode comprises: substrate 100; Be positioned at the resilient coating 110 on the described substrate 100, non-layer 120, n type semiconductor layer 130, active layer 160, p type semiconductor layer 170 and the current-diffusion layer 180 mixed successively; In addition, described light-emitting diode also comprises first insert layer 140 that is arranged at described n type semiconductor layer 130 inside and is arranged at second insert layer 150 between described n type semiconductor layer 130 and the active layer 160.Wherein, described first insert layer 140 and second insert layer 150 are by the non-doped with Al of one deck at least
xIn
yGa
1-x-yThe N layer and/or at least one deck mix the Al of Si
xIn
yGa
1-x-yThe N layer constitutes, wherein, and 0≤x＜0.2,0≤y＜0.2.
Wherein, described first insert layer 140 is by non-doped with Al more than two
xIn
yGa
1-x-yN layer 141 and mix the Al of Si more than two
xIn
yGa
1-x-yN layer 142 alternately constitutes.
Wherein, described second insert layer 150 is by non-doped with Al more than two
xIn
yGa
1-x-yN layer 151 and mix the Al of Si more than two
xIn
yGa
1-x-yN layer 152 alternately constitutes.
Shown in Fig. 2 A and Fig. 2 B, first insert layer 140 and second insert layer 150 are preferably by two-layer non-doped with Al
xIn
yGa
1-x-yN layer and the two-layer Al that mixes Si
xIn
yGa
1-x-yThe N layer formation that overlaps mutually, this setting can obtain comparatively desirable effect, also can avoid the number of plies too much to increase production cost simultaneously.Wherein, non-doped with Al
xIn
yGa
1-x-y N layer 141 is mixed the Al of Si near the 2nd n type semiconductor layer 132
xIn
yGa
1-x-yN layer 142 is near a n type semiconductor layer 131; Non-doped with Al
xIn
yGa
1-x-yN layer 151 is mixed the Al of Si near active layer 160
xIn
yGa
1-x-yN layer 152 is near the 2nd n type semiconductor layer 132.
Further, the gross thickness of first insert layer 140 and second insert layer 150 is respectively 10～600nm, it is set to above-mentioned thickness, in that guarantee not can owing to first insert layer or second insert layer be too thin and when can not effectively improve the electric current diffusion effect, can guarantee again can be not influenced when electronics injects.Certainly, in other specific embodiments of the present invention, the thickness of described first insert layer 140 and second insert layer 150 also can slightly adjust according to the requirement on devices of reality.
Need to prove that first insert layer 140 can be by non-doped with Al more than two
xIn
yGa
1-x-yN layer 141 and mix the Al of Si more than two
xIn
yGa
1-x-yAlternately constituting of N layer 142 rule, that is, and Al
xIn
yGa
1-x-y N layer 141 and the Al that mixes Si
xIn
yGa
1-x-yThe thickness of N layer 142 is equal, and, a plurality of Al that mix Si
xIn
yGa
1-x-ySi doping content in the N layer 142 is identical.Perhaps, described first insert layer 140 also can be by non-doped with Al more than two
xIn
yGa
1-x-yN layer 141 and mix the Al of Si more than two
xIn
yGa
1-x-y N layer 142 erratic alternately formation, that is, and Al
xIn
yGa
1-x-y N layer 141 and the Al that mixes Si
xIn
yGa
1-x-yUnequal and/or a plurality of Al that mix Si of the thickness of N layer 142
xIn
yGa
1-x-ySi doping content between the N layer 142 is different.Equally, second insert layer 150 also can be done above-mentioned conversion, does not repeat them here.
In the present embodiment, as shown in Figure 1, described light-emitting diode is the light-emitting diode of horizontal structure (being also referred to as L shaped structure), and described light-emitting diode also comprises: the degree of depth extend to n type semiconductor layer 130 opening, be formed at the n type electrode 191 in the opening and be formed at p type electrode 192 on the current-diffusion layer 180.In the present embodiment, described opening runs through a n type semiconductor layer 131 of current-diffusion layer 180, p type semiconductor layer 170, active layer 160, second insert layer 150 and part, described n type semiconductor layer 130 can be electrically connected with power cathode by n type electrode 191, and described p type semiconductor layer 170 can be electrically connected with positive source by p type electrode 192.
In other embodiments of the invention, described light-emitting diode also can be the light-emitting diode of vertical stratification, and described light-emitting diode also comprises: be formed at described substrate away from described n type semiconductor layer lip-deep n type electrode and the p type electrode that is formed at described current-diffusion layer top.Described n type semiconductor layer is electrically connected with power cathode by n type electrode; Described p type semiconductor layer is electrically connected with positive source by p type electrode.Described light-emitting diode is used for when luminous, with p type electrode be connected to positive source, n type electrode is connected to power cathode, the active layer in the LED core is luminous under the function of current.
Accordingly, present embodiment also provides a kind of method for manufacturing light-emitting, comprises the steps:
At first, provide a substrate.Described substrate 100 can be nonconducting Sapphire Substrate, or gallium nitride substrate or silicon carbide substrates or silicon substrate.
Then, on described substrate 100, form resilient coating 110, non-layer 120, n type semiconductor layer 130, active layer 160, p type semiconductor layer 170 and the current-diffusion layer 180 mixed.Especially, in the process in forming described n type semiconductor layer 130, in described n type semiconductor layer 130 inner first insert layers 140 that form.For example, form a n type semiconductor layer 131 earlier, form first insert layer 140 afterwards, and then form the 2nd n type semiconductor layer 132, a described n type semiconductor layer 131 is identical with the material of the 2nd n type semiconductor layer 132, and both constitute n type semiconductor layer 130 jointly.
Further, can utilize metal organic chemical vapor deposition (MOCVD) technology to form resilient coating 110, non-layer 120, n type semiconductor layer 130, first insert layer 140, second insert layer 150, active layer 160, p type semiconductor layer 170 and the current-diffusion layer 180 mixed.Preferable, can in same chamber, finish above-mentioned technology, only need to change different programs (feeding different gas, control gaseous flow), above-mentioned purpose can be realized, and production capacity can be improved.Those skilled in the art can adjust reacting gas and every technological parameter accordingly according to the actual conditions of metallo-organic compound chemical vapour deposition (CVD) board, do not repeat them here, but those skilled in the art should know.
In the present embodiment, after forming described current-diffusion layer 180, utilize the method for photoetching and etching, form the opening that the degree of depth extends to a n type semiconductor layer 131; Then, in opening, form n type electrode 191, described n type semiconductor layer 130 is electrically connected with power cathode by n type electrode 191, and on current-diffusion layer 180, form p type electrode 192, described p type semiconductor layer 170 is electrically connected with positive source by p type electrode 192, finally, can form the light-emitting diode of horizontal structure shown in Figure 1.
In another specific embodiment of the present invention, after forming current-diffusion layer, can form n type electrode on away from the surface of n type semiconductor layer at described substrate, and above described current-diffusion layer, form p type electrode.Wherein, described n type semiconductor layer is electrically connected with power cathode by n type electrode, and the p type semiconductor layer is electrically connected with positive source by p type electrode, and is final, can form the light-emitting diode of vertical stratification.
Embodiment two
The difference of present embodiment and embodiment one is that described light-emitting diode only is provided with first insert layer in n type semiconductor layer inside.
Specifically please refer to Fig. 3, it is the light-emitting diode structure schematic diagram of the embodiment of the invention two.Described light-emitting diode comprises: substrate 200; Be positioned at the resilient coating 210 on the described substrate 200, non-layer 220, n type semiconductor layer 230, active layer 260, p type semiconductor layer 270 and the current-diffusion layer 280 mixed successively; In addition, described light-emitting diode also comprises first insert layer 240 that is arranged at described n type semiconductor layer 230 inside, and wherein, described first insert layer 240 is by the non-doped with Al of one deck at least
xIn
yGa
1-x-yThe N layer and/or at least one deck mix the Al of Si
xIn
yGa
1-x-yThe N layer constitutes, wherein, and 0≤x＜0.2,0≤y＜0.2.When n type zone electric current injected, described first insert layer 240 can play the effect of buffering, prevents that electrons spread from arriving p type zone, improved the efficient that meets in electronics and hole, thereby improved the luminosity of light-emitting diode; In addition, described first insert layer 240 can form the similar effect that discharges and recharges, thereby effectively raises the ability of material opposing static.
In the present embodiment, in the process in forming described n type semiconductor layer 230, in described n type semiconductor layer 230 inner first insert layers 240 that form.For example, form a n type semiconductor layer 231 earlier, form first insert layer 240 afterwards, and then form the 2nd n type semiconductor layer 232, a described n type semiconductor layer 231 is identical with the material of the 2nd n type semiconductor layer 232, and both constitute n type semiconductor layer 230 jointly.
Embodiment three
The difference of present embodiment and embodiment one is that described light-emitting diode only is provided with second insert layer between n type semiconductor layer and active layer.
Described light-emitting diode comprises: substrate; Be positioned at the resilient coating on the described substrate, non-layer, n type semiconductor layer, active layer, p type semiconductor layer and the current-diffusion layer mixed successively; In addition, described light-emitting diode also comprises second insert layer that is arranged between n type semiconductor layer and the active layer, and described second insert layer is by the non-doped with Al of one deck at least
xIn
yGa
1-x-yThe N layer and/or at least one deck mix the Al of Si
xIn
yGa
1-x-yThe N layer constitutes, wherein, and 0≤x＜0.2,0≤y＜0.2.When n type zone electric current injected, described second insert layer can play the effect of buffering, prevents that electrons spread from arriving p type zone, improved the efficient that meets in electronics and hole, thereby improved the luminosity of light-emitting diode; In addition, described second insert layer can form the similar effect that discharges and recharges, thereby effectively raises the ability of material opposing static.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. light-emitting diode comprises:
Substrate; And
Be positioned at the resilient coating on the described substrate, non-layer, n type semiconductor layer, active layer, p type semiconductor layer and the current-diffusion layer mixed;
It is characterized in that, also comprise first insert layer that is arranged at described n type semiconductor layer inside and/or be arranged at second insert layer between described n type semiconductor layer and the active layer that wherein, described first insert layer and second insert layer are by the non-doped with Al of one deck at least
xIn
yGa
1-x-yThe N layer and/or at least one deck mix the Al of Si
xIn
yGa
1-x-yThe N layer constitutes, 0≤x＜0.2,0≤y＜0.2.
2. light-emitting diode as claimed in claim 1 is characterized in that, described first insert layer is by non-doped with Al more than two
xIn
yGa
1-x-yN layer and mix the Al of Si more than two
xIn
yGa
1-x-yThe N layer alternately constitutes.
3. light-emitting diode as claimed in claim 1 is characterized in that, described second insert layer is by non-doped with Al more than two
xIn
yGa
1-x-yN layer and mix the Al of Si more than two
xIn
yGa
1-x-yThe N layer alternately constitutes.
4. as each described light-emitting diode in the claim 1 to 3, it is characterized in that, also comprise:
The degree of depth extends to the opening of described n type semiconductor layer;
Be formed at the n type electrode in the described opening, described n type semiconductor layer is electrically connected with a power cathode by described n type electrode;
Be formed at the p type electrode on the described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by described p type electrode.
5. as each described light-emitting diode in the claim 1 to 3, it is characterized in that, also comprise:
Be formed at described substrate away from the lip-deep n type of described n type semiconductor layer electrode, described n type semiconductor layer is electrically connected with a power cathode by described n type electrode;
Be formed at the p type electrode on the described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by described p type electrode.
6. method for manufacturing light-emitting comprises:
One substrate is provided;
On described substrate, form resilient coating, non-layer, n type semiconductor layer, active layer, p type semiconductor layer and the current-diffusion layer mixed;
It is characterized in that, be included in also that described n type semiconductor layer is inner to be formed first insert layer and/or form second insert layer between described n type semiconductor layer and active layer, wherein, described first insert layer and second insert layer are by the non-doped with Al of one deck at least
xIn
yGa
1-x-yThe N layer and/or at least one deck mix the Al of Si
xIn
yGa
1-x-yThe N layer constitutes, 0≤x＜0.2,0≤y＜0.2.
7. method for manufacturing light-emitting as claimed in claim 6 is characterized in that, described first insert layer is by non-doped with Al more than two
xIn
yGa
1-x-yN layer and mix the Al of Si more than two
xIn
yGa
1-x-yThe N layer alternately constitutes.
8. method for manufacturing light-emitting as claimed in claim 6 is characterized in that, described second insert layer is by non-doped with Al more than two
xIn
yGa
1-x-yN layer and mix the Al of Si more than two
xIn
yGa
1-x-yThe N layer alternately constitutes.
9. as each described method for manufacturing light-emitting in the claim 6 to 8, it is characterized in that, also comprise:
Form the opening that the degree of depth extends to described n type semiconductor layer;
Form n type electrode in described opening, described n type semiconductor layer is electrically connected with a power cathode by described n type electrode;
Form p type electrode on described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by described p type electrode.
10. as each described method for manufacturing light-emitting in the claim 6 to 8, it is characterized in that, also comprise:
Form n type electrode at described substrate on away from the surface of described n type semiconductor layer, described n type semiconductor layer is electrically connected with a power cathode by described n type electrode;
Form p type electrode on described current-diffusion layer, described p type semiconductor layer is electrically connected with a positive source by described p type electrode.
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| CN 201110108388 CN102185055A (en) | 2011-04-28 | 2011-04-28 | Light-emitting diode and manufacturing method thereof |
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| CN103258927A (en) * | 2013-05-16 | 2013-08-21 | 合肥彩虹蓝光科技有限公司 | GaN based extension structure for improving antistatic capacity of LED and growing method of GaN based extension structure |
| CN103337571A (en) * | 2013-06-07 | 2013-10-02 | 合肥彩虹蓝光科技有限公司 | Epitaxial structure for improving wavelength concentration in GaN-based epitaxial wafer and growth method of epitaxial structure |
| CN104900775A (en) * | 2014-03-06 | 2015-09-09 | 比亚迪股份有限公司 | LED structure and formation method thereof |
| CN108447952A (en) * | 2018-03-26 | 2018-08-24 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN109817775A (en) * | 2017-11-22 | 2019-05-28 | 晶元光电股份有限公司 | Semiconductor element |
| CN110233190A (en) * | 2014-04-25 | 2019-09-13 | 首尔伟傲世有限公司 | Luminaire |
| CN111403563A (en) * | 2020-03-27 | 2020-07-10 | 厦门乾照光电股份有限公司 | Light-emitting diode with PIPN structure and preparation method thereof |
| CN114464709A (en) * | 2022-04-13 | 2022-05-10 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
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Application publication date: 20110914 |