CN101694858A - LED epitaxy structure and manufacturing method thereof - Google Patents
LED epitaxy structure and manufacturing method thereof Download PDFInfo
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- CN101694858A CN101694858A CN200910201681A CN200910201681A CN101694858A CN 101694858 A CN101694858 A CN 101694858A CN 200910201681 A CN200910201681 A CN 200910201681A CN 200910201681 A CN200910201681 A CN 200910201681A CN 101694858 A CN101694858 A CN 101694858A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000407 epitaxy Methods 0.000 title abstract 4
- 150000004767 nitrides Chemical class 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 24
- 229910002601 GaN Inorganic materials 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000003780 insertion Methods 0.000 abstract 2
- 230000037431 insertion Effects 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 14
- 230000008021 deposition Effects 0.000 description 14
- 239000012535 impurity Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 5
- 229910017083 AlN Inorganic materials 0.000 description 4
- -1 InGaN (InGaN) Chemical compound 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Abstract
The invention discloses an LED epitaxy structure which comprises a substrate layer, a buffer layer, an undoped nitride layer, an n-type nitride layer, a luminescent layer, an insertion layer and a p-type nitride layer from the bottom up, wherein the insertion layer is alternatively formed by an undoped AlxInyGa1-x-yN layer and a p-type AlxInyGa1-x-yN layer, wherein x is not less than 0 but less than 0.3, y is not less than 0 but less than 0.4, and x plus y is not more than 0.5. The invention also discloses a manufacturing method of the LED epitaxy structure. By the invention, the ESD protective property of the LED epitaxy structure can be effectively improved.
Description
Technical field
The present invention relates to a kind of nitride semiconductor photogenerator and manufacture method thereof, particularly relate to a kind of LED epitaxial structure and manufacture method thereof.
Background technology
The typical case of nitride semiconductor photogenerator is represented as light-emitting diode (LED).Traditional LED epitaxial structure comprises as shown in Figure 1 from the bottom to top:
Resilient coating 2 is generally gallium nitride (GaN) or aluminium nitride (AlN), and thickness for example is 25nm more than 10nm;
Plain nitride layer 3 is generally gallium nitride, aluminium gallium nitride alloy (AlGaN) or its combination in any, and thickness is between 1.5～3.5 μ m;
N type nitride layer 4 is generally gallium nitride, aluminium nitride, InGaN (InGaN), indium nitride aluminium or aluminum indium nitride gallium (AlInGaN), wherein is doped with n type impurity such as silicon, germanium (Ge) etc., and thickness is between 1.0～3.5 μ m;
P type nitride layer 6 is generally gallium nitride, aluminium nitride, InGaN (InGaN), indium nitride aluminium or aluminum indium nitride gallium (AlInGaN), wherein is doped with p type impurity such as magnesium (Mg) etc., and thickness for example is 150nm more than 50nm.
The manufacturing process of above-mentioned LED epitaxial structure is:
The 1st step, go up deposit one deck resilient coating 2 (for example being gallium nitride) at substrate layer 1 (for example being sapphire), deposition thickness is 25nm;
The 2nd step, the plain nitride layer 3 of deposit one deck on resilient coating 2 (for example being gallium nitride), deposition thickness is 2 μ m;
The 3rd step, deposit one deck n type nitride layer 4 on plain nitride layer 3 (for example for being doped with the gallium nitride of silicon), deposition thickness is 3 μ m;
In the 4th step, deposit one deck luminescent layer 5 on n type nitride layer 4 particularly is alternating deposition barrier layer 51 and potential well layer 52.If deposit one deck barrier layer 51 and potential well layer 52 as one-period, are then needed to repeat this cycle 4～15 times, could form luminescent layer 5.
The 5th step, deposit one deck p type nitride layer 6 on luminescent layer 5 (for example for being doped with the gallium nitride of magnesium), deposition thickness is more than 100nm, and deposition temperature for example is 950 ℃ more than 900 ℃.
Depositing technics in above-mentioned the 1st～5 step is metal organic chemical vapor deposition (MOCVD).
The LED product, all can be subjected to static and threaten as growing epitaxial structure, manufacturing chip, diced chip, packaged chip etc. in each step of producing.Based on the LED of PN junction structure, produce charge inducing in case be subjected to electrostatic induction influence, on two electrodes of the PN junction of LED, will form high voltage.When the maximum bearing value of voltage above LED, electrostatic charge can discharge between two electrodes of the PN junction of LED in extremely short moment (nanosecond rank), caused LED internal electrically conductive layer, luminescent layer electric leakage and even short circuit.
The method of protection ESD (ElectroStatic discharge, static discharge) mainly contains at present: improve the quality of LED epitaxial structure, increase the electric current dispersion layer or add Zener diode in the LED epitaxial structure.For example Chinese invention patent prospectus CN101335313 (open day on December 31st, 2008) discloses and has a kind ofly inserted plain nitride layer or insert plain nitride layer in the middle of n type nitride layer between n type nitride layer and luminescent layer, formed new LED epitaxial structure is equivalent to increase an electric capacity, thereby improves the ESD barrier propterty.
Summary of the invention
Technical problem to be solved by this invention provides a kind of LED epitaxial structure, and this structure can improve the ESD barrier propterty.
For solving the problems of the technologies described above, LED epitaxial structure of the present invention comprises from bottom to top: substrate layer, resilient coating, plain nitride layer, n type nitride layer, luminescent layer, insert layer, p type nitride layer; Described insert layer is by plain Al
xIn
yGa
1-x-yN layer and p type Al
xIn
yGa
1-x-yThe N layer alternately constitutes; Wherein, 0≤x＜0.3,0≤y＜0.4, x+y≤0.5.
The manufacture method of above-mentioned LED epitaxial structure is: deposit resilient coating, plain nitride layer, n type nitride layer, luminescent layer, insert layer, p type nitride layer on substrate layer successively; The technology of wherein deposit insert layer is:
The 1st step, the plain Al of first deposit one deck
xIn
yGa
1-x-yThe N layer;
The 2nd step, deposit one deck p type Al again
xIn
yGa
1-x-yThe N layer;
In the 3rd step, stop or repeating the above-mentioned the 1st～2 going on foot;
In above-mentioned the 1st～3 step, the temperature of each deposit is 550～900 ℃.
The present invention has increased by an insert layer at the LED epitaxial structure between luminescent layer (multi-layer quantum well structure) and p type nitride layer, this insert layer has lower deposition temperature during fabrication, thus can block from luminescent layer or more the dislocation of lower floor to vertical spread.During deposit p type nitride, this insert layer can also stop the p type impurity luminescent layer diffusion downwards of p type nitride layer on this insert layer.Because above-mentioned two aspect effects, this insert layer can help the LED epitaxial structure effectively to improve the ESD barrier propterty.Test is found, has increased the LED epitaxial structure of this insert layer, and it is more than ESD yield to 90%.
Description of drawings
Fig. 1 is the schematic diagram of existing LED epitaxial structure;
Fig. 2 is the schematic diagram of the multi-layer quantum well structure of luminescent layer among Fig. 1;
Fig. 3 is the schematic diagram of LED epitaxial structure of the present invention;
Fig. 4 is a kind of structural representation of insert layer among Fig. 3;
Fig. 5 is the another kind of structural representation of insert layer among Fig. 3.
Description of reference numerals among the figure:
1 is substrate layer; 2 is resilient coating;
3 is plain nitride layer; 4 is n type nitride layer;
5 is luminescent layer; 51 is barrier layer;
52 is potential well layer; 6 is p type nitride layer;
7 is insert layer; 71 is plain Al
xIn
yGa
1-x-yThe N layer;
72 is p type Al
xIn
yGa
1-x-yThe N layer.
Embodiment
See also Fig. 3, LED epitaxial structure of the present invention comprises from bottom to top:
Resilient coating 2 is generally gallium nitride (GaN) or aluminium nitride (AlN), and thickness for example is 25nm more than 10nm;
Plain nitride layer 3 is generally gallium nitride, aluminium gallium nitride alloy (AlGaN) or its combination in any, and thickness is between 1.5～3.5 μ m;
N type nitride layer 4 is generally gallium nitride, aluminium nitride, InGaN (InGaN), indium nitride aluminium or aluminum indium nitride gallium (AlInGaN), wherein is doped with n type impurity such as silicon, germanium (Ge) etc., and thickness is between 1.0～3.5 μ m;
Insert layer 7 is by plain Al
xIn
yGa
1-x-yN layer and p type Al
xIn
yGa
1-x-yThe N layer alternately constitutes, 0≤x＜0.3,0≤y＜0.4 wherein, x+y≤0.5.Al
xIn
yGa
1-x-yDoped p type impurity magnesium normally among the N.
See also Fig. 4, insert layer 7 comprises that one deck is positioned at the plain Al of below
xIn
yGa
1-x-y N layer 71 and one deck are positioned at the p type Al of top
xIn
yGa
1-x-yN layer 72.This is insert layer 7 the simplest structures.This moment plain Al
xIn
yGa
1-x-y N layer 71 and p type Al
xIn
yGa
1-x-yThe thickness of N layer 72 is all less than 100nm.
See also Fig. 5, insert layer 7 can be the plain Al of multilayer
xIn
yGa
1-x-y N layer 71 and multilayer p type Al
xIn
yGa
1-x-y N layer 72 alternately constitutes plain Al
xIn
yGa
1-x-y N layer 71 and p type Al
xIn
yGa
1-x-yThe number of plies of N layer 72 is identical.That contact with luminescent layer 5 is plain Al all the time
xIn
yGa
1-x-y N layer 71, that contact with p type nitride layer 6 is p type Al all the time
xIn
yGa
1-x-yN layer 72.This moment all plain Al
xIn
yGa
1-x-y N layer 71 and p type Al
xIn
yGa
1-x-yThe thickness of N layer 72 is all less than 100nm, and under the preferable case all less than 10nm.
When x=0 and y=0, Al
xIn
yGa
1-x-yN is a gallium nitride.
When x=0 and y ≠ 0, Al
xIn
yGa
1-x-yN is InGaN (In
yGa
1-yN, 0＜y＜0.4).
When y=0 and x ≠ 0, Al
xIn
yGa
1-x-yN is aluminium gallium nitride alloy (Al
xGa
1-xN, 0＜x＜0.3).
When x ≠ 0 and y ≠ 0, Al
xIn
yGa
1-x-yN is aluminum indium nitride gallium (Al
xIn
yGa
1-x-yN, 0＜x＜0.3,0＜y＜0.4, x+y≤0.5).
P type nitride layer 6 is generally gallium nitride, aluminium nitride, InGaN (InGaN), indium nitride aluminium or aluminum indium nitride gallium (AlInGaN), wherein is doped with p type impurity (for example magnesium) etc., and thickness for example is 150nm more than 50nm.
The manufacture method of LED epitaxial structure of the present invention comprises the steps:
The 1st step, go up deposit one deck resilient coating 2 (for example being gallium nitride) at substrate layer 1 (for example being sapphire), deposition thickness is 25nm;
The 2nd step, the plain nitride layer 3 of deposit one deck on resilient coating 2 (for example being gallium nitride), deposition thickness is 2 μ m;
The 3rd step, deposit one deck n type nitride layer 4 on plain nitride layer 3 (for example for being doped with the gallium nitride of silicon), deposition thickness is 3 μ m;
In the 4th step, deposit one deck luminescent layer 5 on n type nitride layer 4 particularly is alternating deposition barrier layer 51 and potential well layer 52.If deposit one deck barrier layer 51 and potential well layer 52 as one-period, are then needed to repeat this cycle 4～15 times, could form luminescent layer 5.
In the 5th step, deposit one deck insert layer 7 on luminescent layer 5 particularly is the plain Al of alternating deposition
xIn
yGa
1-x-y N layer 71 and p type Al
xIn
yGa
1-x-yN layer 72.At least deposit one deck Al
xIn
yGa
1-x-y N layer 71 and one deck p type Al
xIn
yGa
1-x-y N layer 72 also can the deposit multilayer Al
xIn
yGa
1-x-y N layer 71 and multilayer p type Al
xIn
yGa
1-x-y N layer 72, that contact with luminescent layer 5 is plain Al all the time
xIn
yGa
1-x-y N layer 71, that contact with p type nitride layer 6 is p type Al all the time
xIn
yGa
1-x-yN layer 72.Pay particular attention in this step process: each deposit Al
xIn
yGa
1-x-yThe temperature of N layer 71,72 is all between 550～900 ℃.With lower temperature deposit Al
xIn
yGa
1-x-y N layer 71,72 formed insert layer 7 can stop effectively luminescent layer 5 or more the dislocation of lower floor to vertical spread.
The 6th step, deposit one deck p type nitride layer 6 (for example being magnesium-doped gallium nitride) on insert layer 7, deposition thickness is more than 50nm, and deposition temperature for example is 950 ℃ more than 900 ℃.Because the existence of insert layer 7, this step process are when deposit p type nitride layer 6, the diffusion downwards of p type impurity can be inserted into 7 on layer and stop, and can not be diffused into luminescent layer 5 or lower floor more.
Depositing technics in above-mentioned the 1st～6 step is metal organic chemical vapor deposition (MOCVD).
More than the material, thickness, technology, parameter etc. of each embodiment be signal, any change or the modification done under the prerequisite of not violating inventive concept and spirit all should be regarded as within protection scope of the present invention.
Claims (7)
1. a LED epitaxial structure is characterized in that, comprises from bottom to top: substrate layer, resilient coating, plain nitride layer, n type nitride layer, luminescent layer, insert layer, p type nitride layer; Described insert layer is by plain Al
xIn
yGa
1-x-yN layer and p type Al
xIn
yGa
1-x-yThe N layer alternately constitutes; Wherein, 0≤x＜0.3,0≤y＜0.4, x+y≤0.5.
2. LED epitaxial structure according to claim 1 is characterized in that,
When x=0 and y=0, Al
xIn
yGa
1-x-yN is a gallium nitride;
When x=0 and y ≠ 0, Al
xIn
yGa
1-x-yN is an InGaN;
When y=0 and x ≠ 0, Al
xIn
yGa
1-x-yN is an aluminium gallium nitride alloy;
When x ≠ 0 and y ≠ 0, Al
xIn
yGa
1-x-yN is the aluminum indium nitride gallium.
3. LED epitaxial structure according to claim 2 is characterized in that, described insert layer is positioned at the plain Al of below by one deck
xIn
yGa
1-x-yN layer and one deck are positioned at the p type Al of top
xIn
yGa
1-x-yThe N layer constitutes.
4. LED epitaxial structure according to claim 2 is characterized in that, described insert layer is by the plain Al of multilayer
xIn
yGa
1-x-yN layer and multilayer p type Al
xIn
yGa
1-x-yThe N layer alternately constitutes, and that contact with luminescent layer is plain Al all the time
xIn
yGa
1-x-yThe N layer, that contact with p type nitride layer is p type Al all the time
xIn
yGa
1-x-yThe N layer.
5. according to claim 3 or 4 described LED epitaxial structures, it is characterized in that all plain Al
xIn
yGa
1-x-yN layer and p type Al
xIn
yGa
1-x-yThe thickness of N layer is all less than 100nm.
6. the manufacture method of LED epitaxial structure as claimed in claim 1 is characterized in that, successively deposit resilient coating, plain nitride layer, n type nitride layer, luminescent layer, insert layer, p type nitride layer on substrate layer; The technology of wherein deposit insert layer is:
The 1st step, the plain Al of first deposit one deck
xIn
yGa
1-x-yThe N layer;
The 2nd step, deposit one deck p type Al again
xIn
yGa
1-x-yThe N layer;
In the 3rd step, stop or repeating the above-mentioned the 1st～2 going on foot;
In above-mentioned the 1st～3 step, the temperature of each deposit is 550～900 ℃.
7. the manufacture method of LED epitaxial structure according to claim 6 is characterized in that, described method all adopts metal organic chemical vapor deposition technology in the 1st～3 step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102016817A CN101694858B (en) | 2009-10-15 | 2009-10-15 | LED epitaxy structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102016817A CN101694858B (en) | 2009-10-15 | 2009-10-15 | LED epitaxy structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101694858A true CN101694858A (en) | 2010-04-14 |
| CN101694858B CN101694858B (en) | 2012-06-06 |
Family
ID=42093811
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102016817A Expired - Fee Related CN101694858B (en) | 2009-10-15 | 2009-10-15 | LED epitaxy structure and manufacturing method thereof |
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| Country | Link |
|---|---|
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185055A (en) * | 2011-04-28 | 2011-09-14 | 映瑞光电科技(上海)有限公司 | Light-emitting diode and manufacturing method thereof |
| CN102185054A (en) * | 2011-04-02 | 2011-09-14 | 映瑞光电科技(上海)有限公司 | Light-emitting diode (LED) and manufacturing method thereof |
| CN102185053A (en) * | 2011-04-02 | 2011-09-14 | 映瑞光电科技(上海)有限公司 | Light-emitting diode and manufacturing method thereof |
| CN102185063A (en) * | 2011-04-15 | 2011-09-14 | 映瑞光电科技(上海)有限公司 | Light-emitting diode and manufacturing method thereof |
| WO2022099599A1 (en) * | 2020-11-13 | 2022-05-19 | 苏州晶湛半导体有限公司 | Led device, led structure and preparation method therefor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1499651A (en) * | 2002-11-05 | 2004-05-26 | 炬鑫科技股份有限公司 | Method for manufacturing white light LED and illuminator |
-
2009
- 2009-10-15 CN CN2009102016817A patent/CN101694858B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185054A (en) * | 2011-04-02 | 2011-09-14 | 映瑞光电科技(上海)有限公司 | Light-emitting diode (LED) and manufacturing method thereof |
| CN102185053A (en) * | 2011-04-02 | 2011-09-14 | 映瑞光电科技(上海)有限公司 | Light-emitting diode and manufacturing method thereof |
| CN102185063A (en) * | 2011-04-15 | 2011-09-14 | 映瑞光电科技(上海)有限公司 | Light-emitting diode and manufacturing method thereof |
| CN102185055A (en) * | 2011-04-28 | 2011-09-14 | 映瑞光电科技(上海)有限公司 | Light-emitting diode and manufacturing method thereof |
| WO2022099599A1 (en) * | 2020-11-13 | 2022-05-19 | 苏州晶湛半导体有限公司 | Led device, led structure and preparation method therefor |
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| Publication number | Publication date |
|---|---|
| CN101694858B (en) | 2012-06-06 |
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