CN102184821A - Method for manufacturing grid of millimeter-wave traveling wave tube - Google Patents

Method for manufacturing grid of millimeter-wave traveling wave tube Download PDF

Info

Publication number
CN102184821A
CN102184821A CN2011100905560A CN201110090556A CN102184821A CN 102184821 A CN102184821 A CN 102184821A CN 2011100905560 A CN2011100905560 A CN 2011100905560A CN 201110090556 A CN201110090556 A CN 201110090556A CN 102184821 A CN102184821 A CN 102184821A
Authority
CN
China
Prior art keywords
aperture plate
grid
wave tube
traveling wave
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011100905560A
Other languages
Chinese (zh)
Other versions
CN102184821B (en
Inventor
吴亚琴
刘洋
朱军方
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing Sanle Electronic Information Industry Group Co Ltd
Original Assignee
Nanjing Sanle Electronic Information Industry Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing Sanle Electronic Information Industry Group Co Ltd filed Critical Nanjing Sanle Electronic Information Industry Group Co Ltd
Priority to CN 201110090556 priority Critical patent/CN102184821B/en
Publication of CN102184821A publication Critical patent/CN102184821A/en
Application granted granted Critical
Publication of CN102184821B publication Critical patent/CN102184821B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Plasma Technology (AREA)

Abstract

The invention discloses a method for manufacturing a grid of a millimeter-wave traveling wave tube. The method comprises the following steps of: firstly etching to obtain a planar grid with a required shape on a grid substrate by applying a photoetching technology, then, processing and forming the planar grid by a special spherical forming mold to obtain a spherical-crown-shaped grid, finally polishing the grid to obtain the grid of the millimeter-wave traveling wave tube. The method for manufacturing the grid of the millimeter-wave traveling wave tube, provided by the invention, has the advantages of strong maneuverability and reasonable technical design, and can be used for processing and manufacturing small-size, thin and complexly-shaped spherical grids with special size requirement; the grid manufactured with the method disclosed by the invention has the advantages of no burrs on the surface, low fire striking probability, high qualification rate, stable performances and very important application value.

Description

A kind of preparation method of aperture plate of millimeter wave traveling wave tube
 
Technical field
The present invention designs a kind of preparation method of travelling wave tube part, is specifically related to the preparation method of the aperture plate of a kind of millimeter wave or miniaturization grid-control TWT.
Background technology
Travelling wave tube is the microwave tube that a kind of speed of annotating by the modulation electronics realizes enlarging function, the characteristics of travelling wave tube are bandwidths, gain is high, dynamic range is big and noise is low, travelling wave tube frequency bandwidth (poor/centre frequency of frequency band height two ends frequency) can reach more than 100%, gain is in 25~70 decibels of scopes, the noise factor of low-noise traveling-wave tube is minimum to reach 1~2 decibel, and therefore modern travelling wave tube has become radar, electronic countermeasures, trunking traffic, satellite communication, the live telecast satellite, navigation, remote sensing, remote control, the important microwave electronic device of electronic equipments such as remote measurement.Millimeter wave traveling wave tube has that bandwidth is wide, wave beam is narrow, propagates the characteristics such as climatic influences are little, size Xiao Yi miniaturization that are subjected to, wherein aperture plate is the strength member of millimeter wave traveling wave tube, but the processing method of existing sphere aperture plate is a lathe to be struck out the sphere blank and uses the spark machined aperture plate again, the aperture plate that this method prepares is jagged mostly big, the shortcoming that the concentricity of wheel and symmetry are difficult to guarantee, and the aperture plate size of millimeter wave or miniaturization grid-control TWT is too little, spoke is many, almost can't adopt spark machined.And because the frock design is unreasonable, often cause the incorrect or grid silk fracture of radius of curvature of aperture plate spherical crown during the moulding of prior art aperture plate sphere, qualification rate is lower; And the aperture plate that prior art for preparing obtains is because surperficial burr is many, and aperture plate sparking probability is bigger, the travelling wave tube quality instability of assembling.
Summary of the invention
Goal of the invention: the objective of the invention is provides a kind of strong operability in order to solve the deficiencies in the prior art, and technological design is reasonable, and the energy preparation size is little, wire-grid structure is complicated, and the preparation method of the aperture plate of surperficial carrot-free millimeter wave traveling wave tube.
Technical scheme: in order to realize above purpose, the technical solution used in the present invention is:
A kind of preparation method of aperture plate of millimeter wave traveling wave tube, it may further comprise the steps:
(a) according to the size of the required aperture plate size design of reality plane aperture plate, according to plane aperture plate selection of dimension aperture plate base material, remove the contaminant particles of aperture plate substrate surface, on the aperture plate base material, apply photoresist with rotation mode, under vacuum state, cure on 85 ~ 120 ℃ of hot plates then and (removed the photoresist partial solvent in 30 ~ 60 seconds, strengthen its adhesion, discharge the stress in the photoresist film, prevent that photoresist from staining equipment), then with the photoresist on mask plate and the raster graphic aligning aperture plate base material, use optics mask aligner (high-pressure mercury lamp then, the light that it produced is ultraviolet light) exposure, exposure back is adopted to revolve and is covered the submergence mode and develop, thereby removes non-polymeric photoresist, and the back hard baking on 100 ~ 200 ℃ of hot plates of developing (can evaporate the solvent of photoresist the inside in 1 to 2 minute fully; Post bake is to improve the ability of photoresist at ion injection or etching protection lower surface; Further strengthen the adhesion between photoresist and the substrate surface; Further reduce standing wave effect), hard baking back adopts reactive ion method or inductive couple plasma method to carry out etching, removes the photoresist of substrate surface after the etching, can obtain the plane aperture plate of raster graphic on base material, and is standby;
(b) get the plane aperture plate that step (a) obtains and carry out the sphere moulding process, at first lower cavity die (1) and copper base (2) are packed in the pedestal (3), the plane aperture plate is placed on the copper base (2) then, and upper cavity die (4) is pressed on the aperture plate, and be placed on after compressing with housing screw (5) and be heated to 320 ℃ on the electric furnace, move on the hydraulic press rapidly after then punch (6) being put into upper cavity die (4), punch (6) top is applied the pressure of 2 ~ 5Mpa, and pressurize unloaded frock after 1 to 2 minute, turning aperture plate cylindrical, and, obtain lattice with chromic acid removal copper base, standby;
(c) get the lattice that step (b) obtains, carrying out electrobrightening handles, at first aperture plate being put into concentration is that 20% sodium hydroxide solution boils grease and the oxide of removing the aperture plate surface in 30 to 40 minutes, after taking out then aperture plate was immersed chromic acid 8 ~ 12 seconds, take out aperture plate then and be immersed in the ferrous metal fused mass of removing the aperture plate surface in water-ammonia water-hydrogen peroxide solution that ratio is 1:1:1 in 5 to 8 minutes, take out aperture plate then at H 2PO 4-H 2SO 4-NiSO 4-H 2In the system solution of O, with 16 to 20 volts of voltages, 20 to 50 ℃ of polishings of temperature 2 to 15 seconds were immersed aperture plate chromic acid 2 to 5 seconds after the polishing again, dehydration at last, and oven dry is promptly.
As preferred version, the preparation method of the aperture plate of above-described millimeter wave traveling wave tube, the described aperture plate base material of step (a) is molybdenum or molybdenum rhenium, thickness can be 0.03 ~ 0.1mm, can effectively reduce the grid temperature, reduces the electronics emission of grid.
As preferred version, the preparation method of the aperture plate of above-described millimeter wave traveling wave tube, the described photoresist of step (a) is linear phenolic resin (phenolic aldehyde formaldehyde) positive photoresist, the thickness of coating can be 0.5 ~ 1.5 μ m.
As preferred version, the preparation method of the aperture plate of above-described millimeter wave traveling wave tube, the used developer solution of step (a) development is a Tetramethylammonium hydroxide.
As preferred version, the preparation method of the aperture plate of above-described millimeter wave traveling wave tube, step (a) adopts optical lithography machine contact exposure (being the direct and photoresist layer contact exposure of mask plate), perhaps adopts projection exposure (using the lens gathered light to realize exposure between mask plate and the photoresist).
As preferred version, the preparation method of the aperture plate of above-described millimeter wave traveling wave tube, step (b) place the copper base hydrogen-burning stove 850 ℃ of annealing in hydrogen atmosphere annealing in process 20 minutes before frock is installed earlier, can reduce the hardness of copper base like this.The present invention designs the special tooling of aperture plate sphere moulding in step (b), and the pressure of the present invention during to the moulding of aperture plate spherical crown screens, because the too small aperture plate of pressure does not reach required spherical crown height, but pressure is excessive, spherical crown is yielding, the present invention is 2 ~ 5Mpa through the optimal pressure range that preferably obtains the sphere moulding, more preferably 4.5 ~ 5Mpa, and pressurize can obtain good sphere aperture plate in 1 minute, and the aperture plate straight flange after the moulding is smooth, grid silk non-cracking, the radius of curvature accuracy height of aperture plate spherical crown, performance is good, oval spherical crown phenomenon when the prior art moulding not occurring, and qualification rate promotes more than 1 times.
As preferred version, the preparation method of the aperture plate of above-described millimeter wave traveling wave tube, the described H of step (c) 3PO 4-H 2SO 4-NiSO 4-H 2The system solution of O consists of: H 3PO 4400 ~ 450ml, H 2SO 4150 ~ 200ml, NiSO 440 ~ 60g, H 2O150 ~ 200ml.
The present invention adopts the mode of voltage stabilizing that spherical aperture plate is carried out polishing, according to R= ΡL/S, (Ρ represents the coefficient of material, and L represents the distance of aperture plate apart from anode, and S represents the area of aperture plate), U=IR, I is proportional to S,
Be under the constant situation of other factors, the aperture plate area is big more, electric current is big more, the big grid silk of electric current quantity of heat production is big, the present invention is 16 to 20 volts by the optimum voltage scope of a large amount of experiment screening aperture plate electrobrightenings, experimental result shows, when voltage during less than 16 volts, the burr on aperture plate surface can not fully be removed, and the polishing effect of aperture plate is poor, appoint the right sparking hidden danger that exists, but voltage is during greater than 20 volts, and electric current is excessive, and thin grid silk blows easily, therefore the optimum voltage of electrobrightening aperture plate of the present invention is 16 ~ 20 volts, preferred 18 volts.
Polishing time is relevant with the aperture plate surplus, and the present invention has simultaneously carried out preferably polishing time, because polishing time is oversize, etching extent is too big, the grid silk is easily broken, but polishing time is too short, does not reach the effect of polishing equally, the present invention through a large amount of experiments relatively, filtering out best polishing time is 2 ~ 15 seconds, is more preferably 4 to 5 seconds, fully deburring, the polishing effect of aperture plate is good, and can not damage the grid silk.
Polish temperature also influences the key factor of polishing effect simultaneously, because polish temperature is low excessively, the aperture plate surface finish is inhomogeneous, piebald can appear in the aperture plate surface when serious, but temperature is too high, polishes too violent, the bubble that produces makes the surface of aperture plate produce pit, influence the performance of aperture plate, the best polish temperature that the present invention selects aperture plate through a large amount of testing sieves is 25 ~ 50 ℃, is more preferably 30 to 45 ℃.
Electrolytic polishing liquid provided by the invention; phosphoric acid is main component in the component; it not only plays dissolution but also can form phosphate coating on the aperture plate surface in polishing process; avoid the surface that excessive dissolution takes place thereby can play, and the stickiness that the generation that can suppress to corrode can increase solution simultaneously again make the surface form the effect of mucous layer.
Sulfuric acid helps to improve the conductivity of electropolishing liquid in the component, improves dispersibility and anodic current efficiency, and sulfuric acid helps the dissolving leveling of metal surface, the roughness and the quality of finish on improvement surface.And the molybdenum trisulfate in the component helps to improve the conductive capability of polishing fluid and the effect of buffering corrosion, and the proportioning of above each component determines that through the orthogonal experiment screening polishing effect is good in molybdenum gate screen electrobrightening process.
Beneficial effect: the preparation method of the aperture plate of millimeter wave traveling wave tube provided by the invention compared with prior art has the following advantages:
1, the preparation method of the aperture plate of millimeter wave traveling wave tube provided by the invention, workable, technological design is reasonable, at first use the plane aperture plate that photoetching technique etching on the aperture plate base material obtains required shape, adopt special-purpose sphere mould that plane aperture plate machine-shaping is obtained lattice then, the sphere aperture plate amount of tension after the moulding is little, straight flange is smooth, grid silk non-cracking, the radius of curvature accuracy height of aperture plate spherical crown, performance is good; Adopt preferred version at last again, aperture plate is carried out polishing, can effectively remove the burr on aperture plate surface, reduce the sparking probability of aperture plate, improve the performance of aperture plate.
2, the preparation method of the aperture plate of millimeter wave traveling wave tube provided by the invention, can the processing and preparing size little, the sphere aperture plate that material is thin, aperture plate is complex-shaped, have the special size requirement, as: grid, honeycomb grid, hole grid etc., the aperture plate for preparing can assemble the travelling wave tube of millimeter wave or miniaturization, has important use and is worth.
Description of drawings
The structural representation of used moulds of industrial equipment when Fig. 1 is aperture plate sphere moulding of the present invention.
The structural representation of the dispersion shape aperture plate of the millimeter wave traveling wave tube that Fig. 2 prepares for method of the present invention.
The structural representation of 20 aperture plates such as branch such as grade of the millimeter wave traveling wave tube that Fig. 3 prepares for method of the present invention.
Embodiment:
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment only is used to the present invention is described and is not used in and limit the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
The preparation of the aperture plate of embodiment 1 millimeter wave traveling wave tube
(a) size of design plane aperture plate, according to plane aperture plate selection of dimension thickness is the aperture plate molybdenum base material of 0.06mm, remove the contaminant particles of aperture plate molybdenum substrate surface, at aperture plate molybdenum substrate surface with rotation mode (500 rev/mins of low speed rotation, drip glue, 3000 rev/mins are quickened rotation, whirl coating, solvent flashing) coating thickness is the linear phenolic resin positive photoresist of 1 μ m, under vacuum state, cured 30 seconds on 110 ℃ of hot plates then, then with the photoresist on mask plate and the dispersion shape raster graphic aligning aperture plate molybdenum base material, use optics mask aligner (high-pressure mercury lamp) projection exposure to handle then, the employing of exposure back is revolved the submergence mode of covering and (is sprayed enough developer solutions to substrate surface, and formation puddle shape makes the mobile maintenance of developer solution lower, to reduce the variation of edge developing rate, base material is fixed or slowly rotation, adopts repeatedly to revolve and covers developer solution: apply for the first time, kept 10 ~ 30 seconds, remove; Apply for the second time, keep, remove, dry with the deionized water rinsing rotation at last) develop (the used developer solution that develops is a Tetramethylammonium hydroxide), thereby remove non-polymeric photoresist, on 150 ℃ of hot plates, dried by the fire 2 minutes firmly after developing, hard baking back adopts the inductive couple plasma method to carry out etching, remove remaining photoresist on the molybdenum substrate surface after the etching, obtain the plane aperture plate of dispersion shape, standby;
(b) as shown in Figure 1, get the plane aperture plate that step (a) obtains and carry out the sphere moulding process, at first copper base (2) is placed hydrogen-burning stove 850 ℃ of annealing in hydrogen atmosphere annealing in process 20 minutes, then lower cavity die (1) and copper base (2) are packed in the pedestal (3), the plane aperture plate is placed on the copper base (2) then, and upper cavity die (4) is pressed on the aperture plate, and be placed on after compressing with housing screw (5) and be heated to 320 ℃ on the electric furnace, move on the hydraulic press rapidly after then punch (6) being put into upper cavity die (4), punch (6) top is applied the pressure of 4.5Mpa, and pressurize unloaded frock after 1 minute, turning aperture plate cylindrical, and, obtain lattice with chromic acid removal copper base (2), standby;
(c) get the lattice that step (b) obtains, carrying out electrobrightening handles, at first aperture plate being put into concentration is that 20% sodium hydroxide solution boils grease and the oxide of removing the aperture plate surface in 30 minutes, after taking out then aperture plate was immersed chromic acid 10 seconds, take out aperture plate then and be immersed in the ferrous metal fused mass of removing the aperture plate surface in water-ammonia water-hydrogen peroxide solution that ratio is 1:1:1 in 8 minutes, take out aperture plate then at H 2PO 4-H 2SO 4-NiSO 4-H 2In the system solution of O, with 18 volts of voltages, 35 ℃ of polishings of temperature 4 seconds were immersed aperture plate chromic acid 2 seconds after the polishing again, dehydration at last, and it is 0.06mm that oven dry promptly gets thickness, the sphere aperture plate of the millimeter wave traveling wave tube of the no burr dispersion shape in surface, structure is as shown in Figure 2.
The described H of above step (c) 3PO 4-H 2SO 4-NiSO 4-H 2The system solution of O consists of: H 3PO 4450ml, H 2SO 4200ml, NiSO 460g, H 2O 200ml.
The preparation of the aperture plate of embodiment 2 millimeter wave traveling wave tubes
(a) size of design plane aperture plate, according to plane aperture plate selection of dimension thickness is the aperture plate molybdenum rhenium base material of 0.08mm, remove the contaminant particles of aperture plate molybdenum rhenium substrate surface, be coated with (500 rev/mins of low speed rotation at aperture plate molybdenum substrate surface with rotation mode, drip glue, 3000 rev/mins are quickened rotation, whirl coating, solvent flashing) covers the linear phenolic resin positive photoresist that thickness is 0.6 μ m, under vacuum state, cured 30 seconds on 120 ℃ of hot plates then, then branch raster graphics such as mask plate and 20 are aimed at the photoresist on the aperture plate molybdenum base material, use optics mask aligner (high-pressure mercury lamp) projection exposure to handle then, the employing of exposure back is revolved the submergence mode of covering and (is sprayed enough developer solutions to substrate surface, and formation puddle shape makes the mobile maintenance of developer solution lower, to reduce the variation of edge developing rate, base material is fixed or slowly rotation, adopts repeatedly to revolve and covers developer solution: apply for the first time, kept 10 ~ 30 seconds, remove; Apply for the second time, keep, remove, dry with the deionized water rinsing rotation at last) develop (the used developer solution that develops is a Tetramethylammonium hydroxide), thereby remove non-polymeric photoresist, on 200 ℃ of hot plates, dried by the fire 1 minute firmly after developing, hard baking back adopts the inductive couple plasma method to carry out etching, remove remaining photoresist on the molybdenum rhenium substrate surface after the etching, obtain the plane aperture plate of 20 shapes such as branch such as grade, standby;
(b) get the plane aperture plate that step (a) obtains and carry out the sphere moulding process, at first lower cavity die (1) and copper base (2) are packed in the pedestal (3), the plane aperture plate is placed on the copper base (2) then, and upper cavity die (4) is pressed on the aperture plate, and be placed on after compressing with housing screw (5) and be heated to 320 ℃ on the electric furnace, move on the hydraulic press rapidly after then punch (6) being put into upper cavity die (4), punch (6) top is applied the pressure of 3Mpa, and pressurize unloaded frock after 2 minutes, turning aperture plate cylindrical, and, obtain lattice with chromic acid removal copper base (2), standby;
(c) get the lattice that step (b) obtains, carrying out electrobrightening handles, at first aperture plate being put into concentration is that 20% sodium hydroxide solution boils grease and the oxide of removing the aperture plate surface in 40 minutes, after taking out then aperture plate was immersed chromic acid 8 seconds, take out aperture plate then and be immersed in the ferrous metal fused mass of removing the aperture plate surface in water-ammonia water-hydrogen peroxide solution that ratio is 1:1:1 in 6 minutes, take out aperture plate then at H 2PO 4-H 2SO 4-NiSO 4-H 2In the system solution of O, with 20 volts of voltages, 50 ℃ of polishings of temperature 6 seconds were immersed aperture plate chromic acid 4 seconds after the polishing again, dehydration at last, and oven dry promptly gets 20 five equilibriums, and thickness is 0.08mm, the sphere aperture plate of surperficial carrot-free millimeter wave traveling wave tube, structure is as shown in Figure 3.
The described H of above step (c) 3PO 4-H 2SO 4-NiSO 4-H 2The system solution of O consists of: H 3PO 4400ml, H 2SO 4150ml, NiSO 440g, H 2O 150ml.
The aperture plate of the millimeter wave traveling wave tube for preparing through method provided by the invention, the precision height, stable performance, the electronics emission of the millimeter wave traveling wave tube grid that assembling obtains is low, and aperture plate sparking probability is low, good stability.
The above only is a preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.

Claims (7)

1. the preparation method of the aperture plate of a millimeter wave traveling wave tube is characterized in that, it may further comprise the steps:
(a) size of design plane aperture plate, according to plane aperture plate selection of dimension aperture plate base material, remove the contaminant particles of aperture plate substrate surface, on the aperture plate base material, apply photoresist with rotation mode, under vacuum state, cured 30 ~ 60 seconds on 85 ~ 120 ℃ of hot plates then, then with the photoresist on mask plate and the raster graphic aligning aperture plate base material, use the optics photo-etching machine exposal then, exposure back is adopted to revolve and is covered the submergence mode and develop, thereby removes non-polymeric photoresist, the back hard baking 1 to 2 minute on 100 ~ 200 ℃ of hot plates of developing, hard baking back adopts reactive ion method or inductive couple plasma method to carry out etching, remove photoresist after the etching, obtain the plane aperture plate, standby;
(b) get the plane aperture plate that step (a) obtains and carry out the sphere moulding process, at first lower cavity die (1) and copper base (2) are packed in the pedestal (3), the plane aperture plate is placed on the copper base (2) then, and upper cavity die (4) is pressed on the aperture plate, and be placed on after compressing with housing screw (5) and be heated to 320 ℃ on the electric furnace, move on the hydraulic press rapidly after then punch (6) being put into upper cavity die (4), punch (6) top is applied the pressure of 2 ~ 5Mpa, and pressurize unloaded frock after 1 to 2 minute, turning aperture plate cylindrical, and, obtain lattice with chromic acid removal copper base (2), standby;
(c) get the lattice that step (b) obtains, carrying out electrobrightening handles, at first aperture plate being put into concentration is that 20% sodium hydroxide solution boils grease and the oxide of removing the aperture plate surface in 30 to 40 minutes, after taking out then aperture plate was immersed chromic acid 8 ~ 12 seconds, take out aperture plate then and be immersed in the ferrous metal fused mass of removing the aperture plate surface in water-ammonia water-hydrogen peroxide solution that ratio is 1:1:1 in 5 to 8 minutes, take out aperture plate then at H 2PO 4-H 2SO 4-NiSO 4-H 2In the system solution of O, with 16 to 20 volts of voltages, 25 to 50 ℃ of polishings of temperature 2 to 15 seconds were immersed aperture plate chromic acid 2 to 5 seconds after the polishing again, dehydration at last, and oven dry is promptly.
2. the preparation method of the aperture plate of millimeter wave traveling wave tube according to claim 1 is characterized in that, the described aperture plate base material of step (a) is molybdenum or molybdenum rhenium, and thickness is 0.03 ~ 0.1mm.
3. the preparation method of the aperture plate of millimeter wave traveling wave tube according to claim 1 is characterized in that, the described photoresist of step (a) is the linear phenolic resin positive photoresist, thickness 0.5 ~ 1.5 μ m of coating.
4. the preparation method of the aperture plate of millimeter wave traveling wave tube according to claim 1 is characterized in that, the used developer solution of step (a) development is a Tetramethylammonium hydroxide.
5. the preparation method of the aperture plate of millimeter wave traveling wave tube according to claim 1 is characterized in that, step (a) adopts optical lithography machine contact exposure or projection exposure.
6. the preparation method of the aperture plate of millimeter wave traveling wave tube according to claim 1 is characterized in that, step (b) places copper base (2) hydrogen-burning stove 850 ℃ of annealing in hydrogen atmosphere annealing in process 20 minutes before frock is installed earlier.
7. the preparation method of the aperture plate of millimeter wave traveling wave tube according to claim 1 is characterized in that, the described H of step (c) 3PO 4-H 2SO 4-NiSO 4-H 2The system solution of O consists of: H 3PO 4400 ~ 450ml, H 2SO 4150 ~ 200ml, NiSO 440 ~ 60g, H 2O150 ~ 200ml.
CN 201110090556 2011-04-12 2011-04-12 Method for manufacturing grid of millimeter-wave traveling wave tube Expired - Fee Related CN102184821B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201110090556 CN102184821B (en) 2011-04-12 2011-04-12 Method for manufacturing grid of millimeter-wave traveling wave tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201110090556 CN102184821B (en) 2011-04-12 2011-04-12 Method for manufacturing grid of millimeter-wave traveling wave tube

Publications (2)

Publication Number Publication Date
CN102184821A true CN102184821A (en) 2011-09-14
CN102184821B CN102184821B (en) 2013-04-17

Family

ID=44570979

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201110090556 Expired - Fee Related CN102184821B (en) 2011-04-12 2011-04-12 Method for manufacturing grid of millimeter-wave traveling wave tube

Country Status (1)

Country Link
CN (1) CN102184821B (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103531414A (en) * 2013-10-14 2014-01-22 南京三乐电子信息产业集团有限公司 Picosecond pulse laser cutting preparation method for grid-control traveling wave tube grid mesh
CN103854936A (en) * 2012-12-07 2014-06-11 中国科学院电子学研究所 Method for manufacturing rectangular comb-shaped slow wave structure
CN103901236A (en) * 2014-03-06 2014-07-02 广东工业大学 Hyperfine electrodeless metal wire grid mesh packaging ring
CN106298401A (en) * 2016-08-31 2017-01-04 安徽华东光电技术研究所 Tool die for forming spherical grid and spherical grid forming method
CN106847651A (en) * 2016-07-11 2017-06-13 安徽华东光电技术研究所 A kind of Electronic Control aperture plate and preparation method based on molybdenum base bottom
CN108796503A (en) * 2018-06-12 2018-11-13 睿惢思工业科技(苏州)有限公司 A kind of manufacture craft of speaker net
CN110919304A (en) * 2020-01-09 2020-03-27 安徽华东光电技术研究所有限公司 Method for processing grid of vacuum microwave oscillation source
CN110931330A (en) * 2019-12-23 2020-03-27 安徽华东光电技术研究所有限公司 Preparation process of honeycomb spherical grid mesh

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101864559A (en) * 2010-04-26 2010-10-20 南京三乐电子信息产业集团有限公司 Grid mesh magnetron sputtering hafnium evaporation method
CN101864590A (en) * 2010-04-26 2010-10-20 南京三乐电子信息产业集团有限公司 Electrolytic solution used for molybdenum gate screen electrolytic polishing and preparation method and application thereof
CN101985202A (en) * 2010-11-01 2011-03-16 安徽华东光电技术研究所 Manufacturing process of multi-beam traveling wave tube grid

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101864559A (en) * 2010-04-26 2010-10-20 南京三乐电子信息产业集团有限公司 Grid mesh magnetron sputtering hafnium evaporation method
CN101864590A (en) * 2010-04-26 2010-10-20 南京三乐电子信息产业集团有限公司 Electrolytic solution used for molybdenum gate screen electrolytic polishing and preparation method and application thereof
CN101985202A (en) * 2010-11-01 2011-03-16 安徽华东光电技术研究所 Manufacturing process of multi-beam traveling wave tube grid

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103854936A (en) * 2012-12-07 2014-06-11 中国科学院电子学研究所 Method for manufacturing rectangular comb-shaped slow wave structure
CN103854936B (en) * 2012-12-07 2017-08-25 中国科学院电子学研究所 A kind of manufacture method of rectangle comb-type slow wave structure
CN103531414A (en) * 2013-10-14 2014-01-22 南京三乐电子信息产业集团有限公司 Picosecond pulse laser cutting preparation method for grid-control traveling wave tube grid mesh
CN103531414B (en) * 2013-10-14 2016-03-02 南京三乐电子信息产业集团有限公司 A kind of picosecond pulse laser cutting preparation method of grid-control TWT aperture plate
CN103901236A (en) * 2014-03-06 2014-07-02 广东工业大学 Hyperfine electrodeless metal wire grid mesh packaging ring
CN103901236B (en) * 2014-03-06 2016-04-20 广东工业大学 A kind of hyperfine electrodeless metallic filaments grid mesh packaging ring
CN106847651A (en) * 2016-07-11 2017-06-13 安徽华东光电技术研究所 A kind of Electronic Control aperture plate and preparation method based on molybdenum base bottom
CN106298401A (en) * 2016-08-31 2017-01-04 安徽华东光电技术研究所 Tool die for forming spherical grid and spherical grid forming method
CN108796503A (en) * 2018-06-12 2018-11-13 睿惢思工业科技(苏州)有限公司 A kind of manufacture craft of speaker net
CN110931330A (en) * 2019-12-23 2020-03-27 安徽华东光电技术研究所有限公司 Preparation process of honeycomb spherical grid mesh
CN110919304A (en) * 2020-01-09 2020-03-27 安徽华东光电技术研究所有限公司 Method for processing grid of vacuum microwave oscillation source
CN110919304B (en) * 2020-01-09 2021-07-06 安徽华东光电技术研究所有限公司 Method for processing grid of vacuum microwave oscillation source

Also Published As

Publication number Publication date
CN102184821B (en) 2013-04-17

Similar Documents

Publication Publication Date Title
CN102184821B (en) Method for manufacturing grid of millimeter-wave traveling wave tube
US10363687B2 (en) Mold and method for manufacturing the same
CN102795591B (en) Method for reducing metal secondary electron yield by utilizing regular array structure
JP2006111525A (en) Method for fine structuring of plate glass base body
JPS58157975A (en) Plasma etching method
CN101625971A (en) Method for etching class-III nitride by using photo-assisted oxidation wet method
Lueck et al. Microfabrication of diamond-based slow-wave circuits for mm-wave and THz vacuum electronic sources
CN111039253B (en) Groove composite multi-protrusion structure and preparation process thereof
JP2014043068A (en) Fine pattern forming roll
CN106654060B (en) Production method, black film and the luminescent device of black film
Starodubov et al. A novel approach to microfabrication of planar microstrip meander-line slow wave structures for millimeter-band TWT
Yang et al. Nanofabrication techniques used for suppressing multipactor in space applications
CN102054641B (en) Manufacture process of grid-control TWT grid and mold-pressing grinding tool thereof
US11699594B2 (en) Preparation method for accurate pattern of integrated circuit
CN101752210A (en) Reduce the residual charge method of plasma etching industrial
CN201160337Y (en) Apparatus for transmitting plasma
CN105699429A (en) Micron-order semiconductor sensor and preparation method thereof
CN112289665A (en) Ultrathin refractory metal grid mesh of field emission cathode and preparation method thereof
CN106226851B (en) Micro-lens array and manufacturing method thereof
CN117672838A (en) Ion etching method of substrate
CN118206070A (en) Manufacturing and wet sharpening method for high-aspect-ratio silicon nano cone array
CN112289664A (en) Terahertz vacuum electronic device cold cathode grid and preparation method thereof
JPWO2008099517A1 (en) Microlens mold, microlens and manufacturing method thereof
JPS60119053A (en) Formation of high-luminance ion beam
CN115831721A (en) Hard mask etching method based on side wall protection

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130417