CN102180436A - Semiconductor device and manufacturing method of the same - Google Patents

Semiconductor device and manufacturing method of the same Download PDF

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Publication number
CN102180436A
CN102180436A CN2011100582901A CN201110058290A CN102180436A CN 102180436 A CN102180436 A CN 102180436A CN 2011100582901 A CN2011100582901 A CN 2011100582901A CN 201110058290 A CN201110058290 A CN 201110058290A CN 102180436 A CN102180436 A CN 102180436A
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China
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wiring layer
sensor
wiring
dielectric film
semiconductor devices
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藤井哲夫
杉浦和彦
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

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Abstract

A semiconductor device includes: a sensor element (10) having a plate shape with a surface and including a sensor structure (15 to 17) disposed in a surface portion of the sensor element (10); and a plate-shaped cap element (20) bonded to the surface of the sensor element (10). The cap element (20) has a wiring pattern portion (23 to 25) facing the sensor element (10). The wiring pattern portion (23 to 25) connects an outer periphery of the surface of the sensor element (10) and the sensor structure (15 to 17) so that the sensor structure (15 to 17) is electrically coupled with an external element via the outer periphery. The sensor element (10) does not have a complicated multi-layered structure, so that the sensor element (10) is simplified. Further, the dimensions of the device are reduced.

Description

Semiconductor devices and manufacture method thereof
The application be that July 1, application number in 2008 are 200810128483.8 the applying date, denomination of invention divides an application for the application of " semiconductor devices and manufacture method thereof ".
Technical field
The present invention relates to the manufacture method of a kind of semiconductor devices and a kind of semiconductor devices.
Background technology
With regard to conventional, the someone has proposed a kind of semiconductor dynamic quantity sensor, it comprises moveable part and the standing part with beam texture, and it detects dynamic amount (for example, referring to Patent Document 1 to 3) such as acceleration, yaw rate, vibration etc. by detecting changes in capacitance between (for example) moveable part and the standing part.In each of document 1 to 3, all show a kind of semiconductor dynamic quantity sensor, wherein on multilayer SOI substrate, form separately moveable part with beam texture and standing part, and forms the wiring of connection various piece by polysilicon etc. as the sensing part.
In patent documentation 4, a kind of semiconductor dynamic quantity sensor has been proposed, it can avoid water or foreign substance to enter into this moveable part by adopting the cap member to cover moveable part.In the semiconductor dynamic quantity sensor shown in the patent documentation 4, cap with a large amount of through holes member is provided, and directly carry out the lead-in wire bonding, thereby adopt the substitute of lead-in wire as wiring layer to the wire bond pads that is arranged on the SOI substrate that is formed with moveable part and standing part.
In patent documentation 5, proposed a kind of semiconductor dynamic quantity sensor, it has by constituting the SOI substrate and being provided with another SOI substrate of stacked formation on the silicon layer that movable part grades and being provided with the structure that the silicon layer of signal processing circuit obtains by annular projection.In patent documentation 6, another example of annular projection has been proposed.In having the sensor of this structure, provide wiring layer from signal processing circuit, so that signal processing circuit is connected with external electric, and with the outside that wiring layer extracts annular projection across, make itself and annular projection insulation simultaneously.
Patent documentation 1:JP-H9-129898A
Patent documentation 2:JP-H11-295336A
Patent documentation 3:JP-H6-123628A
Patent documentation 4:JP-2004-333133A
Patent documentation 5:JP-2004-311951A
Patent documentation 6:JP-H11-94506A
Yet, the problem of each in patent documentation 1 to 3 in the technology of explanation is, owing to form the wiring layer that constitutes by polysilicon layer on the same substrate of sensing part being formed with, thereby complicate fabrication process, and then reduced the yield rate of the semiconductor dynamic quantity sensor of manufacturing.
With regard to patent documentation 4 described technology, must form a large amount of holes that extends through the cap member.Yet, owing to use bonding tool that bonding wire is connected to wire bond pads, thereby should form the large scale through hole, contact with the sidewall surfaces of through hole to avoid described instrument.This has caused following problem: the semiconductor chip that is formed with semiconductor dynamic quantity sensor has the large chip size.
With regard to patent documentation 5 described technology, owing to wiring layer intersects with annular projection, thereby should adopt insulator layer that projection and wiring layer are isolated, thereby make their electrically insulated from one another.This has caused the baroque problem of semiconductor dynamic quantity sensor.
Therefore, require to simplify the structure of the sensor in the semiconductor devices, and reduce chip size.
Summary of the invention
In view of the above problems, the purpose of this invention is to provide a kind of semiconductor devices.Another object of the present invention provides a kind of manufacture method of semiconductor devices.
According to a first aspect of the invention, a kind of semiconductor devices comprises: have the tabular sensor element on surface, it comprises the sensor construction in the surface portion that is arranged on this sensor element; And the tabular cap element that is attached to the surface of sensor element.Described cap element has the wiring pattern part in the face of sensor element; And described wiring pattern partly connects the outer ledge and the sensor construction on the surface of sensor element, thereby makes sensor construction by described outer ledge and outer member electric coupling.
In above-mentioned device, owing to wiring pattern partly is arranged in the cap element, so described sensor element does not have complex multilayered structures.Therefore, simplified the structure of described sensor element.In addition, also reduced described size of devices.
According to a second aspect of the invention, a kind of semiconductor devices comprises: first chip, have tabular first chip of first surface, and it comprises the IC circuit part in the first surface part that is arranged on this first chip; And tabular second chip with second surface, it comprises the 2nd IC circuit part in the second surface part that is arranged on this second chip.Described first chip also comprises the first wiring pattern part, and this first wiring pattern partly comprises first dielectric film, first wiring layer, second dielectric film and second wiring layer.First dielectric film is arranged on the IC circuit part.On first dielectric film, first wiring layer is carried out composition, and itself and an IC circuit part are coupled.Second dielectric film is arranged on first wiring layer.Second dielectric film has first opening, thereby first wiring layer is exposed from second dielectric film by first opening.On first wiring layer that the second wiring layer setting is to expose in first opening.Described second chip comprises the second wiring pattern part, and this second wiring pattern partly comprises the 3rd dielectric film, the 3rd wiring layer, the 4th dielectric film and the 4th wiring layer.The 3rd dielectric film is arranged on the 2nd IC circuit part.On the 3rd dielectric film, the 3rd wiring layer is carried out composition, and itself and the 2nd IC circuit part are coupled.The 4th dielectric film is arranged on the 3rd wiring layer.The 4th dielectric film has second opening, thereby the 3rd wiring layer is exposed from described the 4th dielectric film by described second opening.The 4th wiring layer is arranged on the 3rd wiring layer that exposes from second opening.The surface of first chip is in the face of the surface of second chip.Second wiring pattern the 4th wiring layer partly of second wiring layer and second chip of first wiring pattern part of first chip is bonded to each other.
Each wiring pattern partly is arranged on the relevant chip, thereby described wiring pattern part is not arranged in the corresponding circuit part.Therefore, simplify the structure of each circuit part, also reduced size of devices.
According to a third aspect of the invention we, a kind of manufacture method of semiconductor devices comprises: preparation has the tabular sensor element on surface, and forms sensor construction in the surface portion of sensor element; Preparation has the tabular cap element of wiring pattern part, and wiring pattern is partly carried out composition, so that it is combined with sensor element: utilize the wiring pattern part that the outer ledge on the surface of sensor element is connected to sensor construction; And the cap element is combined with sensor element, so that wiring pattern partly is connected to sensor construction.
In said method, owing to sensor construction only is arranged in the sensor element, so sensor element does not have complicated wire structures.Therefore, simplified the step that forms sensor element.In addition, owing in the cap element, formed the wiring pattern part, therefore also simplified the formation step of cap element.Therefore, simplify the manufacture method of semiconductor devices, and improved the yield rate of device.
According to a forth aspect of the invention, a kind of manufacture method of semiconductor devices comprises: preparation has a plurality of sensor wafers that have the tabular sensor element on surface separately, forms sensor construction in the surface portion of each sensor element; Preparation has the cap wafer of a plurality of tabular cap elements, each cap element has the wiring pattern part that will combine with corresponding sensor element, and each wiring pattern is partly carried out composition, so that connect the outer ledge and corresponding sensor construction of corresponding sensor element; Sensor wafer is combined, so that each wiring pattern partly is connected to corresponding sensor construction with the cap wafer; And cap wafer and sensor wafer be divided into a plurality of sensor chips.
In said method, simplified and formed the step of sensor element, and simplified the step that forms the cap element.Therefore, simplify the manufacture method of semiconductor devices, and improved the yield rate of described device.In addition, a plurality of sensor chips have been formed simultaneously.
According to a fifth aspect of the invention, a kind of manufacture method of semiconductor devices comprises: preparation has tabular first chip on surface, in the surface portion of first chip, form an IC circuit part, and on an IC circuit part, form the first wiring pattern part, described first wiring pattern partly comprises first dielectric film, first wiring layer, second dielectric film and second wiring layer, wherein on an IC circuit part, form first dielectric film, on first dielectric film, first wiring layer is carried out composition, so that make it be connected to an IC circuit part, second dielectric film is formed on described first wiring layer and has first opening, so that expose first wiring layer, and second wiring layer is formed on first wiring layer that exposes from second dielectric film by described opening by described first opening; Preparation has tabular second chip on surface, in the surface portion of second chip, form the 2nd IC circuit part, and on the 2nd IC circuit part, form the second wiring pattern part, described second wiring pattern partly comprises the 3rd dielectric film, the 3rd wiring layer, the 4th dielectric film and the 4th wiring layer, wherein on the 2nd IC circuit part, form the 3rd dielectric film, on the 3rd dielectric film, the 3rd wiring layer is carried out composition, so that make it be connected to the 2nd IC circuit part, the 4th dielectric film is formed on described the 3rd wiring layer and has second opening, so that expose the 3rd wiring layer, and the 4th wiring layer is formed on the 3rd wiring layer that exposes from the 4th dielectric film by second opening by described second opening; Make the surface of the surface of first chip, and second wiring layer of first wiring pattern part of first chip is combined with the 4th wiring layer of second wiring pattern part of second chip in the face of second chip.
Each wiring pattern partly is arranged on the relevant chip, thereby described wiring pattern part is not arranged in the corresponding circuit part.Therefore, simplify the structure of each circuit part, also reduced size of devices.In addition, first chip easily is connected to second chip.Therefore, simplified the manufacture method of described device.
Description of drawings
By the detailed description of carrying out below with reference to accompanying drawing, above-mentioned and other purposes, feature and advantage of the present invention will become apparent.In the accompanying drawings:
Fig. 1 is the plane according to the semiconductor dynamic quantity sensor of the first embodiment of the present invention;
Fig. 2 is the sectional view of the sensor shown in Figure 1 of II-II along the line;
Fig. 3 A is the plane of Sensor section, and Fig. 3 B is the plane of cap portion;
Fig. 4 A is that the sectional view of manufacturing according to the step of the Sensor section of the semiconductor dynamic quantity sensor of first embodiment is shown to 4C;
Fig. 5 A is that the sectional view of manufacturing according to the step of the cap portion of the semiconductor dynamic quantity sensor of first embodiment is shown to 5D;
Fig. 6 is the diagrammatic sketch that illustrates in conjunction with according to the manufacturing step of the Sensor section of the semiconductor dynamic quantity sensor of first embodiment and cap portion;
Fig. 7 illustrates the diagrammatic sketch that is formed on a plurality of semiconductor dynamic quantity sensors on the single silicon wafer;
Fig. 8 is the schematic sectional view of semiconductor dynamic quantity sensor according to a second embodiment of the present invention;
Fig. 9 is the schematic sectional view of the semiconductor dynamic quantity sensor of a third embodiment in accordance with the invention;
Figure 10 is the schematic sectional view of the semiconductor dynamic quantity sensor of a fourth embodiment in accordance with the invention;
Figure 11 is the schematic sectional view of semiconductor dynamic quantity sensor according to a fifth embodiment of the invention;
Figure 12 is the schematic sectional view of semiconductor dynamic quantity sensor according to a sixth embodiment of the invention;
Figure 13 is the schematic sectional view of semiconductor dynamic quantity sensor according to a seventh embodiment of the invention;
Figure 14 is the schematic sectional view according to the semiconductor dynamic quantity sensor of the eighth embodiment of the present invention;
Figure 15 is the schematic sectional view according to the semiconductor dynamic quantity sensor of the ninth embodiment of the present invention;
Figure 16 is the schematic sectional view according to the semiconductor dynamic quantity sensor of the tenth embodiment of the present invention;
Figure 17 A is that the sectional view of manufacturing according to the step of the Sensor section of the tenth embodiment is shown to 17C;
Figure 18 is the plane according to the cap portion of the 11st embodiment of the present invention;
Figure 19 is the schematic sectional view according to the semiconductor dynamic quantity sensor of the 12nd embodiment of the present invention;
Figure 20 is the schematic sectional view according to the semiconductor dynamic quantity sensor of the 13rd embodiment of the present invention;
Figure 21 is the schematic sectional view according to the semiconductor devices of the 14th embodiment of the present invention;
Figure 22 is the diagrammatic sketch that the step of making semiconductor devices shown in Figure 21 is shown;
Figure 23 is the schematic sectional view according to the semiconductor devices of the 15th embodiment of the present invention;
Figure 24 is the plane according to the semiconductor dynamic quantity sensor of the 16th embodiment of the present invention;
Figure 25 is the sectional view along the line XXV-XXV of Figure 24;
Figure 26 is the schematic sectional view according to the semiconductor dynamic quantity sensor of the 17th embodiment of the present invention;
Figure 27 is the schematic sectional view according to the semiconductor dynamic quantity sensor of the 18th embodiment of the present invention;
Figure 28 A is the schematic plan view according to the semiconductor dynamic quantity sensor of the 19th embodiment of the present invention, and Figure 28 B is the sectional view along the line XXVIIIB-XXVIIIB of Figure 28 A; And
Figure 29 A is the schematic plan view according to the semiconductor dynamic quantity sensor of the 20th embodiment of the present invention, and Figure 29 B is the sectional view along the line XXIX-XXIX of Figure 29 A.
The specific embodiment
First embodiment
With reference now to accompanying drawing,, will be described hereinafter the first embodiment of the present invention.Semiconductor dynamic quantity sensor as the semiconductor devices shown in hereinafter is that it is used for detecting the acceleration or the angular speed of (for example) vehicle such as the dynamic quantity sensor of acceleration transducer with moveable part or angular-rate sensor (Gyro sensor).In described semiconductor devices, adopt cap protection such as IC or LSI integrated circuit, have the semiconductor dynamic quantity sensor (acceleration transducer, angular-rate sensor (Gyro sensor) etc.) and the MEM oscillator of moveable part.Described device is applicable to acceleration transducer or angular-rate sensor (Gyro sensor).
Fig. 1 is the plane according to the semiconductor dynamic quantity sensor of first embodiment.Fig. 2 is the sectional view of the sensor shown in Figure 11 of II-II along the line.Fig. 3 A is the plane of Sensor section 10, and Fig. 3 B is the plane of cap portion 20, shows wherein Sensor section 10 and cap portion 20 planes respect to one another separately.In Fig. 3 B, first dielectric film 22 and second dielectric film 24 have been omitted.Hereinafter will be referring to figs. 1 to the structure of 3 explanation semiconductor dynamic quantity sensors.
As shown in Figure 2, semiconductor dynamic quantity sensor comprises stacked tabular Sensor section 10 and tabular cap portion 20 mutually.
Sensor section 10 is provided with the sensing part that is used to detect such as the physical quantity of acceleration.Sensor section 10 comprises the SOI substrate that has first silicon layer 11, second silicon layer 12 and place the insulating barrier 13 between silicon layer 11 and 12, and is arranged on the wiring layer 14 on first silicon layer 11.For in silicon layer 11 and 12 each, for example, adopt n type single crystal silicon.For insulating barrier 13, for example, adopt SiO2.For wiring layer 14, for example, adopt Al.
The sensing part is set having the surface and constitute in the surface layer part on surface of tabular first silicon layer 11 of SOI substrate.Particularly, as shown in Figure 1, first silicon layer 11 is formed with travelling electrode standing part 15, travelling electrode part 16, fixed electrode part 17, coupling part 18 and periphery 19.
It is block that each travelling electrode standing part 15 is, and be arranged on two positions on the insulating barrier 13.Travelling electrode part 16 is arranged between these travelling electrode standing parts 15.As shown in Figure 3A, travelling electrode part 16 comprise the straight line portion 16a that connects travelling electrode standing part 15, separately perpendicular to elastic part 16b and the strip shaped electric poles part 16c of straight line portion 16a.As the result who travelling electrode 16 is arranged between the travelling electrode standing part 15, travelling electrode 16 is in the state that floats on second silicon layer 12.
Strip fixed electrode part 17 is arranged on relative with the electrode part 16c of the travelling electrode part 16 separately position on the insulating barrier 13.Although electrode part 16c shown in the present embodiment and fixed electrode part 17 quantitatively are minimum of a value separately, but in actual conditions, according to the electrode part 16c of the bigger quantity of comb structure setting and the fixed electrode part 17 of bigger quantity, to constitute comb electrodes, that is capacitor.
Adopt this structure, when semiconductor dynamic quantity sensor receives acceleration (or angular speed) from the outside, the elastic part 16b of travelling electrode part 16 shrinks, thereby the electrode part 16c of travelling electrode part 16 is moved with respect to the direction of the fixed electrode part 17 that is in a fixed position along the straight line portion 16a extension of travelling electrode part 16.Therefore, comprise the capacitance of the capacitor of fixed electrode part 17 and electrode part 16c, can obtain the acceleration or the angular speed that receive by semiconductor dynamic quantity sensor by detection.Travelling electrode standing part 15, travelling electrode part 16 and the fixed electrode part 17 that will constitute comb structure hereinafter separately are called sensor construction.
Coupling part 18 is as the terminal that semiconductor dynamic quantity sensor is connected with external electric.As shown in Figure 2, owing on first silicon layer 11, wiring layer 14 is set, therefore can semiconductor dynamic quantity sensor be connected with external electric by wiring layer 14.
As shown in Figure 3A, periphery 19 is arranged to around the sensor as aforementioned structure once, also once around coupling part 18.Will readily appreciate that, even not fully around coupling part 18 1 times the time, also do not have operational issue.That is to say, isolated zone that is provided with sensor construction and the zone that is provided with the coupling part 18 that is connected with the outside by periphery 19.
On the other hand, cap portion 20 has avoided water or foreign substance to enter into above-mentioned sensor construction, and it is made of silicon substrate 21, first dielectric film 22, first wiring layer 23, second dielectric film 24 and second wiring layer 25.First dielectric film 22 can be made of identical materials or different materials with second dielectric film 24.First wiring layer 23 and second wiring layer 25 are this situation equally.First wiring layer 23, second dielectric film 24 and second wiring layer 25 are corresponding to the wiring pattern part.
Silicon substrate 21 has recessed portion 21a, and wherein tetragonal side surface is recessed towards its opposite side surface.When cap portion 20 and Sensor section 10 were overlapped, recessed portion 21a exposed coupling part 18 from silicon substrate 21.
On silicon substrate 21 and Sensor section 10 facing surfaces, form first dielectric film 22.First dielectric film 22 makes first wiring layer 23 insulated from each other with silicon substrate 21.First wiring layer 23 is carried out composition, and it is arranged on first dielectric film 22.
On first wiring layer 23, form second dielectric film 24, so that cover first wiring layer 23.In the middle of second dielectric film 24, form opening in the appropriate section relative with fixed electrode part 17, travelling electrode standing part 15 and coupling part 18.
Second wiring layer 25 is carried out composition, and it is arranged on second dielectric film 24 that is provided with opening thus.That is to say that second wiring layer 25 comprises the wiring portion 25a of the fixed electrode part 17, travelling electrode standing part 15 and the coupling part 18 that are attached to Sensor section 10 and the hermetic unit 25b that is attached to the periphery 19 of Sensor section 10.Hermetic unit 25b is arranged to cross (traverse) first wiring layer 23.In other words, hermetic unit 25b is arranged to cross over (span over) first wiring layer 23.
In having second wiring layer 25 of such wire structures, wiring portion 25a and hermetic unit 25b are identical apart from the corresponding height on the surface of silicon substrate 21.
In the present embodiment, in a side surface of silicon substrate 21, recessed portion 21a is set, thereby does not provide and second wiring layer 25 corresponding with respect to the periphery 19 of recessed portion 21a.Correspondingly, second wiring layer 25 is arranged at least once around the sensor construction of Sensor section 10.
As mentioned above, in the opening portion of second dielectric film 24, first wiring layer 23 is electrically connected with the wiring portion 25a of second wiring layer 25.On the other hand, in the not opening portion of second dielectric film 24, that is, and in the relative zone of second dielectric film 24 and periphery 19, on second dielectric film 24, form the hermetic unit 25b of second wiring layer 25, thereby make first wiring layer 23 and hermetic unit 25b insulation.That is to say, a kind of like this wiring configuration can be provided, wherein first wiring layer 23 and hermetic unit 25b are intersected with each other, and cross periphery 19 coupling part 18 is electrically connected with the fixed electrode part 17 of sensor unit 10 and each in the travelling electrode standing part 15.
For top first dielectric film of mentioning respectively 22 and second dielectric film 24, for example, adopt SiO 2Or Si 3N 4For first wiring layer 23 and second wiring layer 25, for example, adopt Al or polysilicon.
Then, by second wiring layer 25 of cap portion 20 firmly being attached to the periphery 19 of Sensor section 10 such as the method for direct combination.Therefore, provide a kind of structure as shown in Figure 2, wherein by second silicon layer 12, insulating barrier 13 and the periphery 19 of sensor unit 10 and by second wiring layer 25 of cap portion 20, hermetic unit 25b, second dielectric film 24 and first dielectric film, the 22 seal sensor structures of second wiring layer 25.
That is to say,, can avoid water or foreign substance to enter into seal cavity by the seal sensor structure.There is following situation: found time in described space; And described space is contained such as N 2Or the inert gas of He, perhaps contain air.In the present embodiment, described space is a vacuum.
In addition, as shown in Figure 1, be arranged on recessed portion 21a in the silicon substrate 21 of cap portion 20 exposes Sensor section 10 from silicon substrate 21 coupling part 18.As shown in Figure 2, bonding wire 31 is bonded to from the coupling part 18 that silicon substrate 21 exposes, so that semiconductor dynamic quantity sensor is electrically connected to the outside.Above be to explanation according to the general structure of the semiconductor dynamic quantity sensor of present embodiment.
Next, explanation is made the method for above-mentioned semiconductor dynamic quantity sensor.Below hypothesis forms a plurality of Sensor sections 10 on single silicon wafer.Fig. 4 A is that the sectional view of manufacturing according to the step of the Sensor section 10 of the semiconductor dynamic quantity sensor of present embodiment is shown to 4C.
At first, in the step shown in Fig. 4 A, preparation SOI substrate.Particularly, use silicon single crystal wafer as second silicon layer 12, it is forming the SiO of thickness in the scope of 0.1 to 2 μ m as support base on support base 2Film is as insulating barrier 13.In addition, will be attached to SiO as the silicon layer of first silicon layer 11 by the wafer associated methods 2On the film, prepare the SOI substrate thus.
In the present embodiment, use resistivity at N type (100) silicon layer in the scope of 0.02 Ω cm of 0.001 Ω cm for example as first silicon layer 11.Use resistivity at N type (100) silicon substrate in the scope of 10 Ω cm of 0.001 Ω cm for example as second silicon layer 12.
Monocrystalline substrate of mentioning respectively above and silicon layer can also have P-type conduction.Not only can use (100) type as crystalline orientation, can also use other orientations that adopt usually as crystalline orientation.Can easily understand, can also form the SOI substrate as silicon by adopting CVD method etc. not only to deposit the polysilicon that monocrystalline silicon but also deposition contain the impurity of high concentration.Except silicon substrate, can also adopt glass substrate, metal, pottery, other semi-conducting materials etc.Each thickness in first and second silicon layers 11 and 12 can be set to the value in the scope of 500 μ m arbitrarily at 1 μ m.
In the step shown in Fig. 4 B, for example, by the CVD method form on first silicon layer 11 of SOI substrate thickness at the Al layer of 0.1 μ m in the scope of 2 μ m as wiring layer 14.In this case, on the whole surface of first silicon layer 11, form wiring layer 14.
Next, in the step shown in Fig. 4 C, by forming groove in photoetching/etching step each in the wiring layer 14 and first silicon layer 11, to form fixed electrode part 17, travelling electrode standing part 15, periphery 19 and coupling part 18.In this case, form travelling electrode part 16 by utilizing gas phase or liquid phase HF (hydrogen fluoride) etchant to remove first silicon layer 11 as the part of travelling electrode part 16 and the insulating barrier 13 between second silicon layer 12.By above-mentioned steps, finish the Sensor section 10 of semiconductor dynamic quantity sensor.
Next, explanation is made the method for cap portion 20.Below hypothesis forms a plurality of cap portions 20 on single silicon wafer.Fig. 5 A is that the sectional view of manufacturing according to the step of the cap portion 20 of the semiconductor dynamic quantity sensor of present embodiment is shown to 5D.
At first, in the step shown in Fig. 5 A, preparation resistivity for example is the monocrystalline substrate 21 of the so-called silicon wafer of conduct that is oriented to (100) face of 0.01 Ω cm.On silicon substrate 21, form thickness at the Si of 1 μ m in the scope of 2 μ m 3N 4Film is as first dielectric film 22.Can form Si by LPCVD method or plasma CVD method 3N 4Film.
In the step shown in Fig. 5 B, forming thickness on first dielectric film 22 at the Al layer of 0.1 μ m in the scope of 2 μ m, and it is being carried out composition, to form first wiring layer 23 by photoetching/etching step.Can also utilize by the aperture masking that constitutes such as stainless metal and use so-called mask vapour deposition process.
In the step shown in Fig. 5 C, forming thickness on first wiring layer 23 and first dielectric film 22 at the SiO of 0.5 μ m in the scope of 4 μ m 2Film is as second dielectric film 24.Second dielectric film 24 formed have fully, on entire wafer, planarization is carried out on the surface of second dielectric film 24 by the CMP method greater than the thickness of first wiring layer 23.Second dielectric film 24 is not carried out planarization, can on the whole surface that will in next step, form, form the fully second thick wiring layer 25, by the CMP method planarization is carried out on the whole surface of second wiring layer 25, by photoetching/etching step second wiring layer 25 is carried out composition then.By to SiO 2Film carries out composition, the SiO in fixed electrode part 17, travelling electrode standing part 15 and the coupling part 18 of facing Sensor section 10 2Form the opening portion 24a that exposes first wiring layer 23 in the appropriate section of film.Opening portion 24a needn't necessarily be formed on just on the position relative with the fixed electrode part 17 of Sensor section 10, travelling electrode standing part 15 and coupling part 18, and it also can be formed on the position with lucky relative position deviation.Opening portion 24a provides contact between first wiring layer 23 and second wiring layer 25 that will form in next step.At this moment, in an identical manner part removed second dielectric film 24 at least corresponding to the part of the electrode part 16c of travelling electrode part 16.This be for the electrode part 16c that makes travelling electrode part 16 unlikely and cap portion 20 come in contact.
In the step shown in Fig. 5 D, by forming the Al layer and it being carried out the method for composition or forms separately wiring portion 25a and hermetic unit 25b as second wiring layer 25 by the method that adopts mask.Therefore, connect the wiring portion 25a and first wiring layer 23 of second wiring layer 25, to conduct electricity in the part that opening portion 24a is provided at second dielectric film 24.
In this case, wiring portion 25a and hermetic unit 25b are formed make wiring portion 25a and hermetic unit 25b equate apart from the height on the surface of silicon substrate 21.As required, hermetic unit 25b can be that electricity is floated, and perhaps can be under the predetermined potential (for example earth potential).By above-mentioned steps, finished the cap portion 20 of semiconductor dynamic quantity sensor.Can also adopt glass substrate, metal, pottery or silicon substrate 21 other semi-conducting materials in addition substrate as cap portion 20.
Next, as shown in Figure 6, Sensor section 10 and cap portion 20 are bonded to each other.Particularly, make the wiring layer 14 of Sensor section 10 and second wiring layer 25 of cap portion 20 have relativeness, encourage their surfaces separately by utilizing argon ion etc. to carry out sputter in a vacuum, under the temperature in the scope of room temperature to 500 ℃, make wiring layer 14 and 25 firm combinations by so-called direct combined techniques then, shown in JP-H10-92702 A.In this way, make the hermetic unit 25b combination of the periphery 19 and the cap portion 20 of Sensor section 10, with the seal sensor structure.On the other hand, by fixed electrode part 17, travelling electrode standing part 15 and the coupling part 18 of Sensor section 10 being attached to the wiring portion 25a of cap portion 25, can be electrically connected the sensor construction and the coupling part 18 of Sensor section 10.
In the present embodiment, make Sensor section 10 and cap portion 20 combinations by aforesaid direct combination.Yet, also can carry out and be welded to connect etc. by for example on second wiring layer 25 of the wiring layer 14 of Sensor section 10 and cap portion 20, forming the metal level that constitutes by Ni, Cu, Au etc.Perhaps, can also use electroconductive binder that connection is provided, be welded to connect to replace carrying out such as silver paste.According to described method, under the situation of above-mentioned direct combination, wiring portion 25a and hermetic unit 25b must equate apart from the height on the surface of silicon substrate 21 in second wiring layer 25 of cap portion 20.Yet, use be welded to connect or the situation of electroconductive binder under, scolder or adhesive play a part to regulate the corresponding height of wiring portion 25a and hermetic unit 25b, thereby wiring portion 25a and hermetic unit 25b are not necessarily equal apart from the height on the surface of silicon substrate 21.That is to say, under use is welded to connect situation with electroconductive binder, can be by cap portion 20 being pressed in seal sensor structure on the Sensor section 10.
As mentioned above, on corresponding silicon wafer, form Sensor section 10 and cap portion 20, make them stacked mutually then.Therefore, as shown in Figure 7, on wafer 40, form a plurality of semiconductor dynamic quantity sensors.Therefore, by cutting wafer shown in Figure 7 40, wafer 40 can be divided, on the basis of each chip so that independently semiconductor dynamic quantity sensor to be provided via cutting into small pieces.
It should be noted, under actual conditions, on wafer 40, form Sensor section 10 and cap portion 20, make to comprise a hundreds of semiconductor dynamic quantity sensor therein, the final wafer 40 of on the basis of each chip, dividing.On the other hand, as shown in Figure 6, can also be by forming Sensor section 10 and cap portion 20 discretely, and make independently Sensor section 10 and independently cap portion 20 in conjunction with making semiconductor dynamic quantity sensor.
After this, each semiconductor dynamic quantity sensor is installed on the (not shown) such as circuit board, and, output to the outside of semiconductor dynamic quantity sensor with the signal of telecommunication that allows in sensor construction, to produce according to physical quantity to coupling part 18 and the circuit (not shown) bonding that goes between.
As mentioned above, present embodiment is characterised in that on the surface of the cap portion 20 of the semiconductor dynamic quantity sensor relative with Sensor section 10 sandwich construction is set that it comprises first dielectric film 22, first wiring layer 23, second dielectric film 24 and second wiring layer 25.This has eliminated the necessity that complicated wiring layer is set in the Sensor section 10 that is provided with as sensing sensor construction partly, realized the simplification of the structure of Sensor section 10, has realized the simplification of the structure of semiconductor dynamic quantity sensor thus.
By the cap portion 20 with wiring layer is provided, and make it play a part seal, there is no need and make, nor need again to provide sandwich construction for Sensor section 10 to Sensor section 10 provides the step of wiring layer to become.Therefore, can simplify the manufacture process of Sensor section 10, and simplify the manufacture process of whole semiconductor dynamic quantity sensor.Can improve the yield rate of semiconductor dynamic quantity sensor like this, and reduce cost.
In addition, constituting the wiring portion 25a of second wiring layer 25 and hermetic unit 25b separately equates apart from the height on the surface of silicon substrate 21.This allows by wiring portion 25a coupling part 18 and sensor construction to be electrically connected by only making Sensor section 10 and cap portion 20 combinations, and this also allows by hermetic unit 25b seal sensor structure.
In addition, recessed portion 21a is set in cap portion 20, so that coupling part 18 from wherein exposing Sensor section 10.This layout can be used in the instrument of carrying out the lead-in wire bonding and avoid coming in contact with cap portion 20, can also be implemented easily into the lead-in wire bonding of coupling part 18.Therefore, there is no need to be cap portion 20 be provided for the going between through hole of bonding.Can avoid the increase of the size of cap portion 20 like this, realize reducing of chip size thus.
Second embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of first embodiment.In the first above-mentioned embodiment,, the Sensor section 10 of semiconductor dynamic quantity sensor is used to realize and the outside coupling part that is electrically connected 18 for providing.Present embodiment has the feature structure that permission is connected with external electric from cap portion 20.
Fig. 8 is the schematic sectional view according to the semiconductor dynamic quantity sensor of present embodiment.As shown in the figure, provide a kind of like this structure, the coupling part 18 of Sensor section 10 shown in Figure 2 wherein is not provided, 10 of Sensor sections have the part of being surrounded by periphery 19.On the other hand, cap portion 20 has the structure identical with first embodiment.
Therefore, as shown in Figure 8, the size of Sensor section 10 that is not provided with coupling part 18 is less than the size of Sensor section shown in Figure 2.When the sensor construction of the hermetic unit 25b seal sensor part 10 of passing through cap portion 20, exposed the wiring portion 25a of the cap portion 20 of the coupling part 18 that is attached to Sensor section shown in Figure 2 10.
In the present embodiment, the wiring portion 25a of (promptly not sealed) that employing exposes in Sensor section 10 is as pad.As shown in Figure 8, bonding wire 31 is connected to the wiring portion 25a that is exposed, so that semiconductor dynamic quantity sensor is connected with external electric.
In this way, the wiring portion 25a of cap portion 20 can be connected to the outside.In this case, the size of Sensor section 10 is less than the size among first embodiment, and the size of cap portion 20 then remains unchanged.This has realized the reducing of size of semiconductor dynamic quantity sensor shown in Figure 2.In addition, in the present embodiment, in Sensor section 10, be provided at the recessed portion 21a in the silicon substrate 21 that is arranged on cap portion 20 among first embodiment.In independent assembling but not under the situation of wafer to wafer assembling, can also remove recessed portion 21a.
The 3rd embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of second embodiment.Fig. 9 is the schematic sectional view according to the semiconductor dynamic quantity sensor of present embodiment.Present embodiment has a kind of like this structure, wherein on first silicon layer 11 in Sensor section shown in Figure 8 10 wiring layer 14 is not set, and with the wiring portion 25a of second wiring layer 25 of cap portion 20 and first silicon layer 11 that hermetic unit 25b is directly connected to Sensor section 10.Particularly, in first silicon layer 11, use P type silicon and adopt under the situation of Al layer as second wiring layer 25, the resistivity of silicon in the scope of 0.01 to 1 Ω cm, thereby compare easier formation Ohmic contact with utilizing N type silicon.Correspondingly, can adopt P type silicon with relatively low concentration.
When cap portion 20 is attached to the Sensor section 10 with such structure, can at room temperature the Al layer directly be attached on the silicon layer.In this case, can eliminate the necessity of steps such as heat treatment, thereby simplify manufacture process.
In addition,, therefore can omit the step of making wiring layer 14, and simplify the structure of Sensor section 10 because Sensor section 10 needn't be provided with wiring layer 14.
The 4th embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of first embodiment.Present embodiment is characterised in that in semiconductor dynamic quantity sensor, and the IC circuit part especially is set in cap portion 20.
Figure 10 is the schematic sectional view according to the semiconductor dynamic quantity sensor of present embodiment.As shown in the figure, the silicon substrate 21 that constitutes cap portion 20 with the surperficial facing surfaces that is provided with dielectric film 22 on IC circuit 50 is set.
IC circuit part 50 is provided with circuit, for example is used to amplify the amplifying circuit and the mathematical operation circuit that is used for carrying out based on this signal mathematical operation that are equivalent to by the signal of Sensor section 10 detected physical quantitys.In the manufacture process of cap portion 20, especially before comprising the multilayer wiring of first wiring layer 23, formation forms IC circuit part 50.
To go between and 32 be connected to IC circuit part 50.For example, lead-in wire is connected to the coupling part 18 of Sensor section 10, is connected to and is arranged on the semiconductor dynamic quantity sensor circuit external, or the like.Therefore, can be implemented in the structure that IC circuit part 50 is set in the cap portion 20.
The 5th embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of the 4th embodiment.Figure 11 is the schematic sectional view according to the semiconductor dynamic quantity sensor of present embodiment.As shown in the figure, the silicon substrate 21 of cap portion 20 with Sensor section 10 facing surfaces on IC circuit part 50 is set.
Then, form first dielectric film 22, comprise the surface of the silicon substrate 21 of IC circuit part 50, and form first wiring layer 23, second dielectric film 24 and second wiring layer 25 thereon successively with covering.In this case, in first dielectric film 22, unshowned opening is set, and can adopts so-called IC chip manufacturing method.In addition, form the wiring layer of IC chip by Al or Cu, thereby can also use multiple wiring layer.Between the IC circuit 50 and first wiring layer 23, provide electrical connection by opening.
This structure of cap portion 20 is carried out the step that first dielectric film 22 is set allow to be provided with IC circuit part 50 on the surface of silicon substrate 21 after immediately.In addition, will not go between and 32 be connected to IC circuit part 50.In this way, can simplify the step of manufacturing according to the cap portion 20 of the 4th embodiment.
The 6th embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of the 3rd embodiment.Figure 12 is the schematic sectional view that illustrates according to the semiconductor dynamic quantity sensor of present embodiment.As shown in the figure, cap portion 20 is attached to the Sensor section 10 that is not provided with coupling part 18.The silicon substrate 21 of cap portion 20 with Sensor section 10 facing surfaces on IC circuit part 50 is set.
In this way, can be implemented in the structure that IC circuit part 50 is set in the structure shown in Figure 9.This is equally applicable to structure shown in Figure 8.In this case, as shown in figure 10, IC circuit part 50 is set in structure shown in Figure 8.
The 7th embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of first embodiment.Figure 13 is the schematic sectional view according to the semiconductor dynamic quantity sensor of present embodiment.As shown in the figure, a plurality of coupling parts 18 are set in Sensor section 10.
In the present embodiment, except unidirectional coupling part 18 shown in Figure 2, also provide two-way coupling part 18.This allows to connect lead-in wire 31 from Sensor section 10 along a plurality of directions.In this case, in cap portion 20, form first wiring layer 23 in Sensor section 10, so that cross over the periphery 19 of Sensor section 10 along the direction that coupling part 18 is set.And in the present embodiment, the wiring portion 25a of second wiring layer 25 and hermetic unit 25b equate apart from the height on the surface of silicon substrate 21.
Therefore, can in Sensor section 10, coupling part 18 be set along a plurality of directions.Present embodiment can also be applied to second embodiment shown in Figure 8, and coupling part 18 be set along a plurality of directions.Can also form around whole sensor part 10 periphery once, and be connected to the inside that periphery 19 shields periphery 19 by the (not shown) that will go between.
And in the present embodiment, can be implemented in the structure that IC circuit part 50 is set in the cap portion 20 according to the mode identical with the 5th embodiment with (for example) the 4th.
The 8th embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of the 7th embodiment.Figure 14 is the schematic sectional view according to the semiconductor dynamic quantity sensor of present embodiment.As shown in the figure, the silicon substrate 21 of cap portion 20 with Sensor section 10 facing surfaces in recessed portion 21a is set.
In by hermetic unit 25b region surrounded, recessed portion 21a is set.Particularly, in institute's region surrounded, in the zone of the silicon substrate 21 beyond the part that combines wiring portion 25a and Sensor section 10, that is, in the silicon substrate 21 relative, form recessed portion 21a with second silicon layer 12 of Sensor section 10.Also in the zone relative of silicon substrate 21, recessed portion 21a is set with travelling electrode part 16.
Recessed portion 21a has reduced the influence of electricity that the sensor construction that is arranged in the Sensor section 10 receives from cap portion 20 or machinery contact etc.Therefore, in structure shown in Figure 14, three recessed portion 21a are set in silicon substrate 21.Yet it is just enough in the zone relative with the travelling electrode part 16 that detects physical quantity recessed portion 21a to be set at least.Therefore, can in the silicon substrate 21 of cap portion 20, recessed portion 21a be set, and reduce influence from silicon substrate 21 to sensor construction.
For example, can also provide IC circuit part 50 shown in Figure 10 for said structure shown in Figure 14.Perhaps, can also realize Fig. 8 and structure shown in Figure 9 by the coupling part 18 of removing Sensor section 10.
The 9th embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of first embodiment.Present embodiment is characterised in that the periphery 19 with the silicon substrate 21 of cap portion 20 and Sensor section 10 is set to be under the identical electromotive force.
Figure 15 is the schematic sectional view according to the semiconductor dynamic quantity sensor of present embodiment.As shown in the figure, in the appropriate section that constitutes the first relative dielectric film 22 of periphery cap portion 20 and the office, outer edge that is arranged on first silicon layer 11 19 and second dielectric film 24 separately, opening portion 22a and opening portion 24a are set.In opening portion 22a and 24a, form conduction contact part 26 and 27 respectively.
Be formed on conduction contact part 26 among the opening portion 22a of first dielectric film 22 corresponding to first conduction contact part.Be formed on conduction contact part 27 among the opening portion 24a of second dielectric film 24 corresponding to second conduction contact part.
Conduction contact part 26 plays a part to be electrically connected the silicon substrate 21 and first wiring layer 23.Conduction contact part 27 plays a part to be electrically connected the wiring portion 25a of first wiring layer 23 and second wiring layer 25.By such structure, make the periphery 19 of silicon substrate 21, conduction contact part 26, first wiring layer 23, conduction contact part 27, wiring portion 25a, wiring layer 14 and first silicon layer 11 be in conduction state, and it is set to be under the identical electromotive force.
In this structure, these conduction contact parts 26 and 27 are set along the whole periphery 19 that is arranged on the peripheral edge portion of first silicon layer 11.Yet, also conduction contact part 26 and 27 can be set along the part of periphery 19.
On the other hand, can second silicon layer 12 be connected to the electromotive force of second silicon layer 12 that Sensor section 10 is set on the lead frame by for example utilizing silver paste etc.
Therefore provide the conduction contact part 26 and 27 that is electrically connected periphery 19 and silicon substrate 21 by wiring layer, can be implemented as the structure that semiconductor physical quantity sensor provides shielding construction for cap portion 20.
It should be noted, can also in semiconductor dynamic quantity sensor shown in Figure 15, be implemented in the content that has realized among second to the 8th embodiment.
The tenth embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of the 9th embodiment.Present embodiment is characterised in that the periphery 19 that makes first silicon layer 11 in Sensor section 10 is electrically connected with second silicon layer 12.
Figure 16 is the schematic sectional view according to the semiconductor dynamic quantity sensor of present embodiment.Semiconductor physical quantity sensor shown in Figure 16 has the structure that realizes by the substrate contact portion 11a that is provided for for the periphery 19 of structure shown in Figure 15 and the insulating barrier 13 between second silicon layer 12 periphery 19 and second silicon layer 12 are electrically connected.Substrate contact portion 11a is for example formed by polysilicon.
Can be along the whole periphery 19 that is arranged in first silicon layer 11, perhaps the part along periphery 19 forms substrate contact portion 11a.
Next, with the manufacture method of explanation according to the Sensor section 10 of present embodiment.Figure 17 A is that the sectional view of manufacturing according to the step of the Sensor section 10 of present embodiment is shown to 17C.
At first, in the step shown in Figure 17 A, the preparation support base is as second silicon layer 12, and formation thickness is the SiO of 0.1 μ m to 2 μ m on support base 2Film is as insulating barrier 13.Then, by photoetching/etching step, the opening portion 13a that exposes second silicon layer 12 is set in the zone of the insulating barrier 13 that periphery 19 is set.
Next, in the step shown in Figure 17 B, be 3 μ m to the polysilicon layer of 100 μ m as first silicon layer 11 by for example CVD method deposit thickness on insulating barrier 13.Forming in the process of polysilicon layer,, P, As, B etc. can obtain to have high concentration and low-resistance DOPOS doped polycrystalline silicon as impurity by being provided simultaneously by the CVD method.In this way, form substrate contact portion 11a among the opening portion 13a in being arranged on insulating barrier 13, and form first silicon layer 11.Then, on first silicon layer 11, form wiring layer 14 according to the mode identical with the step shown in Fig. 4 B.
Afterwards, in the step shown in Figure 17 C,, in first silicon layer 11, form periphery 19 and sensor construction by carrying out and the identical step of step shown in Fig. 4 C.In this way, can obtain to have the substrate contact portion 11a that is arranged between the periphery 19 and second silicon layer 12, and the structure that the periphery 19 and second silicon layer 12 are electrically connected, Sensor section 10 finished thus according to present embodiment.
Therefore be arranged to therebetweenly by the substrate contact portion 11a that will be electrically connected the periphery 19 and second silicon layer 12, second silicon layer 12 can be set to be under the electromotive force identical, and can form shielding construction with the silicon substrate 21 of cap portion 20.Owing to allowing second silicon layer 12 to reduce, therefore can obtain the shield effectiveness higher than structure shown in Figure 15 from externalities.In described manufacture method, forming by the CVD method under the situation of polysilicon layer, when under the higher temperature in 900 ℃ to 1200 ℃ the scope for example, forming polysilicon layer, can form the part that form substrate contact portion 11a by monocrystalline silicon by epitaxial growth.
The 11 embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of the 9th and the tenth embodiment.In above-mentioned structure, conduction contact part 26 and 27 are set along the whole periphery 19 of the peripheral edge portion that is positioned at first silicon layer 11 or along the part of periphery 19 according to the 9th and the tenth embodiment.Yet, can also take wherein to be provided with the structure of conduction contact part at a place.
Figure 18 is the plane according to the cap portion 20 of present embodiment.As shown in the figure, only the place in hermetic unit 25b is provided with conduction contact part 28.Also such conduction contact part 28 can be set in many places.Therefore, can conduction contact part 28 be set individually a position.
The 12 embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of the 6th embodiment.Present embodiment is characterised in that the Sensor section 10 that utilizes the projection setting to be attached to cap portion 20.
Figure 19 is the schematic sectional view according to the semiconductor dynamic quantity sensor of present embodiment.As shown in the figure, be provided for the projection 60 that (chou closes) installed in upside-down mounting on the coupling part in Sensor section 10 18.More specifically, on the wiring layer that constitutes by Al 14 of coupling part 18, projection 60 is set.In Sensor section 10, form a plurality of projections 60.
Form thickness at the cap portion 20 in the scope of 100 μ m of 10 μ m for example.On the other hand, form the projection 60 that is higher than cap portion 20 with respect to Sensor section 10.For example, form the Au ball as projection 60.Can also form the projection 60 that constitutes by Cu.
On projection 60, upside-down mounting mounting circuit boards 70.Because projection 60 is higher than cap portion 20 with respect to Sensor section 10, therefore can be in conjunction with flat circuit board 70.When the height of projection 60 is set to for example about 30 μ m, can realize that small-scale upside-down mounting installs (chou closes).
Although form IC circuit part 50 in cap portion 20, cap portion 20 needn't be provided with IC circuit part 50.
Following formation projection 60.Preparation SOI substrate, and on first silicon layer 11, form wiring layer 14.Then, on wiring layer 14, form resist, and it is carried out composition, to expose the zone of the wiring layer 14 that will form projection 60.After this, for example, carry out Cu with respect to the upper surface of resist and electroplate, remove resist then.As a result, projection 60 stayed on the zone of wiring layer 14 that resist has opening.In this way, can form projection 60.
Then, after forming projection 60, as mentioned above, cap portion 20 is attached to Sensor section 10.After this, prepare circuit board 70, and its upside-down mounting is installed on the Sensor section 10, finished sensor shown in Figure 19 thus by projection 60.
Therefore by for Sensor section 10 provides projection, circuit board 70 upside-down mountings can be installed on the Sensor section 10, and can further realize sandwich construction.
The 13 embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of the 12 embodiment.In above-mentioned the 12 embodiment, projection 60 formed with respect to Sensor section 10 be higher than cap portion 20.In the present embodiment, on the contrary, projection 60 formed be lower than cap portion 20.
Figure 20 is the schematic sectional view according to the semiconductor dynamic quantity sensor of present embodiment.As shown in the figure, projection 60 is formed with respect to Sensor section 10 be lower than cap portion 20.On the other hand, circuit board 70 with cap portion 20 facing surfaces in form sunk part 71.Therefore, even when being installed in circuit board 70 upside-down mountings on the Sensor section 10, cap portion 20 is included in the sunk part 71 in the circuit board 71.Therefore, can under the situation of contact cap part 20 not, circuit board 70 be installed on the Sensor section 10.
Sunk part 71 in the circuit board 70 also passes circuit board 70 and extends.In this case, this is equivalent in circuit board 70 opening is set.Yet,, therefore can make circuit board 70 avoid contacting according to mode same as described above with cap portion 20 because cap portion 20 is included in the opening.
Therefore, even when projection 60 is lower than cap portion 20 with respect to Sensor section 10, also can circuit board 70 upside-down mountings be installed on the Sensor section 10 by sunk part 71 or opening are set in circuit board 70.
The 14 embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of each embodiment.Present embodiment is characterised in that the chips incorporate that makes two to have corresponding wiring pattern part, to constitute semiconductor devices.
Figure 21 is the schematic sectional view according to the semiconductor devices of present embodiment.As shown in the figure, semiconductor devices comprises first chip 80 and second chip 90 that is bonded to each other.
First chip 80 with surface has tabular profile, and has the IC circuit part 81 in the superficial layer that is arranged on described surface.First chip 80 has wiring pattern part 82, and its structure is identical with wiring pattern part shown in Figure 2.
Particularly, on an IC circuit part 81, form first dielectric film 83.On first dielectric film 83, first wiring layer 84 that will be connected to an IC part 81 is carried out composition.In addition, on first wiring layer 84, form second dielectric film 85 with the opening portion 85a that exposes first wiring layer 84.On first wiring layer 84 that exposes from opening portion 85a, form second wiring layer 86.Although not shown in Figure 21, wiring pattern part 82 is electrically connected to an IC circuit part 81.
Similarly, second chip 90 with surface has tabular profile, and has the 2nd IC circuit part 91 in the surface layer part that is arranged on described surface.Second chip 90 also has the wiring pattern part 92 that is formed on the 2nd IC circuit part 91, and its structure is identical with above-mentioned wiring pattern part 82.
Particularly, on the 2nd IC circuit part 91, form first dielectric film 93.On first dielectric film 93, first wiring layer 94 that will be connected to the 2nd IC part 91 is carried out composition.In addition, on first wiring layer 94, form second dielectric film 95 that is provided with the opening 95a that exposes first wiring layer 94.On first wiring layer 94 that exposes from opening portion 95a, form second wiring layer 96.Will readily appreciate that, wiring pattern part 92 is electrically connected to the 2nd IC circuit part 91.
Make the surface of first chip 80 and the surface of second chip 90 have the orientation that faces with each other, and second wiring layer 96 of the wiring pattern part 92 of second wiring layer 86 of wiring pattern part 82 of first chip 80 and second chip 90 is bonded to each other.
The size of first chip 80 is less than the size of second chip 90, thereby second wiring layer 96 of second chip 90 is come out from first chip 80.Bonding wire 31 is connected to second wiring layer 96 that is exposed, so that semiconductor devices is connected with external electric.
Following manufacturing has the semiconductor devices of this structure.As shown in figure 22, preparation is formed with first chip 80 of an IC circuit part 81 and wiring pattern part 82, and second chip 90 that is formed with the 2nd IC circuit part 91 and wiring pattern part 92.
In first chip 80, the height of second wiring layer 86 equal surperficial identical with respect to first chip 80 on any position.Similarly, in second chip 90, the height of second wiring layer 96 is equal surperficial identical with respect to second chip 90 on any position also.
Chip 80 and 90 shown in Figure 22 all forms under wafer state.In the wafer that is formed with the first a large amount of chips 80, in being set, the various piece of bonding wire forms through hole.
Then, at room temperature in conjunction with wafer independently.At this moment, second wiring layer 96 of the wiring pattern part 92 of second wiring layer 86 of wiring pattern part 82 of first chip 80 and second chip 90 is bonded to each other.After this, cut and divide each wafer, finish each semiconductor devices shown in Figure 21 thus by cutting into small pieces.
Therefore, by for each chip 80 and 90 provides corresponding wiring pattern part 82 and 92, and make independently that wiring pattern part 82 and 92 is bonded to each other, can form each semiconductor devices.In this case, owing to there is no need to be provided with complicated wiring pattern in each circuit part 81 and 91, the area that therefore can avoid circuit part 81 and 91 to occupy increases, and avoids each the size in chip 80 and 90 to increase thus.In addition, owing to only combine the wiring pattern part 82 and 92 of chip 80 independently and 90, therefore can simplify the manufacture process of semiconductor devices.
The 15 embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of the 14 embodiment.Present embodiment is characterised in that wiring pattern part 82 and 92 is provided with corresponding hermetic unit.
Figure 23 is the schematic sectional view according to the semiconductor devices of present embodiment.As shown in the figure, in first chip 80, on second dielectric film 85 of wiring pattern part 82, form hermetic unit 86a.Shown in Fig. 3 B, hermetic unit 86a has the annular shape that an end is connected with its other end.On second dielectric film 85, form hermetic unit 86a, thereby make itself and first wiring layer, 84 electric insulations, and have the height identical with second wiring layer 86.
Similarly, in second chip 90, also on second dielectric film 95, form the hermetic unit 96a identical with above-mentioned hermetic unit 86a.
Make independently second wiring layer 86 and 96 combinations, and make independently hermetic unit 86a and 96a combination, to seal by hermetic unit 86a and 96a, first dielectric film 83 and 93 and second dielectric film 85 and 95 spaces that limit.
Therefore by providing ring packing part 86a and the 96a that has equal height with second wiring layer 86 and 96 for wiring pattern part 82 and 92 independently; can avoid the entering of steam, moisture, ion etc., and can protect seal cavity not to be subjected to externalities from the outside.
Because seal cavity is not subjected to from externalities, for example, therefore the influence of temperature etc. can avoid the variation of the characteristic of circuit part 81 independently and 91.
The 16 embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of each embodiment.In each above-mentioned embodiment, the semiconductor dynamic quantity sensor or the semiconductor devices of the acceleration on the direction that detects the surface that is parallel to Sensor section 10 is shown by way of example.In the present embodiment, on the contrary, with the semiconductor dynamic quantity sensor of the acceleration of explanation detection of vertical on the direction on the surface of Sensor section 10.
Figure 24 is the plane according to the semiconductor dynamic quantity sensor of present embodiment.Figure 25 is the sectional view along the line XXV-XXV of Figure 24.Although in the plane of Figure 24, mainly show Sensor section 10, also show the part of first wiring layer 23 of cap portion 20 therein.
As shown in figure 24, by periphery 19 around the zone of Sensor section 10 in beam part 100 and travelling electrode 110 are set.As shown in figure 25, by SiO 2Deng each beam part 100 of formation on the insulating barrier 13 that constitutes.Be etched into tabular profile shown in Figure 24 by a part and form moveable part 110 first silicon layer 11.Moveable part 110 makes its side surface be connected to beam part 100.Travelling electrode 110 is provided with a large amount of through hole 111.On travelling electrode 110, stay wiring layer 14.
Remove the insulating barrier 13 between the travelling electrode 110 and second silicon layer 12, thereby make travelling electrode 110 be in the state of floating on second silicon layer 12.That is to say, forming the bottom slit of height under the travelling electrode 110 corresponding to the thickness of the insulating barrier 13 between the travelling electrode 110 and second silicon layer 12.On the other hand, between second dielectric film 24 of wiring layer on the travelling electrode 110 14 and cap portion 24, form the top slit of height corresponding to the thickness of second wiring layer 25.Therefore, travelling electrode 110 is as can be along arrow indicated direction shown in Figure 25, i.e. the axle that moves along the direction perpendicular to the surface of Sensor section 10.Below will be called the Z axle perpendicular to the direction on the surface of Sensor section 10.
Hermetic unit 25b by being attached to periphery 19 is around beam part 100 and travelling electrode 110, and it is arranged in the seal cavity.
In addition, cap portion 20 has first wiring layer 23, and it is formed on when cap portion 20 is bonded to each other with Sensor section 10 position relative with travelling electrode 110.First wiring layer 23 is clipped between first dielectric film 22 and second dielectric film 24.Use first wiring layer 23 as upper electrode (fixed electrode) and use travelling electrode 110 to form capacitor as lower electrode.
In this semiconductor devices, when Z-direction is vibrated, detect the variation of the distance between first wiring layer 23 and the travelling electrode 110 at travelling electrode 110.More specifically, the wiring layer 14 on the detection travelling electrode 110 and the variation of the distance between first wiring layer 23.That is to say that the electric capacity of the capacitor that changes by the variation that detects with distance obtains the acceleration on the Z-direction.
For example, can form travelling electrode 110 by the manufacture method identical with travelling electrode part shown in Figure 1 16.Present embodiment shows and all forms the beam part 100 with thickness identical with first silicon layer 11 of SOI substrate.Yet, also can reduce the thickness of each beam part 100 as required.In this case, importantly be precisely defined to ripple disable the slit between the travelling electrode 110 and first wiring layer 23, it is used to detect the electric capacity on the Z-direction.Present embodiment uses CVD multilayer sedimentation, sputtering method etc., and this allows to form all has the beam part 100 of precise thickness.
As mentioned above, can use the part conduct of first wiring layer 23 of cap portion 20 to be used for the fixed electrode of the sensor of sense acceleration, and can detect the acceleration on the Z-direction.In addition, can pass through hermetic unit 25b sealed beam part 100 and travelling electrode 110.This can be avoided travelling electrode 110 to be subjected to externalities, and improves the degree of accuracy of acceleration detection.
The 17 embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of the 16 embodiment.Figure 26 is the schematic sectional view according to the semiconductor dynamic quantity sensor of present embodiment.As shown in the figure, in the present embodiment, remove wiring layer 14 from travelling electrode 110 tops.Therefore, form the top slit of height corresponding to the combination thickness of second wiring layer 25 and the wiring layer 14 removed from travelling electrode 110 tops.Therefore, compare with the situation that forms wiring layer 14 on travelling electrode 110, the slit between second dielectric film 24 and the travelling electrode 110 is vertically wideer.Therefore, can avoid contacting with second dielectric film 24 along the travelling electrode 110 that Z-direction moves.
In addition, also remove wiring layer 14 from periphery 19 tops.Therefore, remove the part that is not attached to cap portion 20 of wiring layer 14 from first silicon layer 11.In other words, the wiring portion 25a of second wiring layer 25 that is attached to cap portion 20 of wiring layer 14 and the part of hermetic unit 25b only are set on first silicon layer 11.
Therefore, making Sensor section 10 and cap portion 20 form wiring layer 14 in conjunction with the zone of the first required silicon layer 11, can reduce the influence of the difference of the thermal coefficient of expansion between silicon and the metal by only.
The 18 embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of the 17 embodiment.Figure 27 is the schematic sectional view according to the semiconductor dynamic quantity sensor of present embodiment.As shown in the figure, in the present embodiment, in the zone of second dielectric film 24 relative, form counterelectrode 25c with travelling electrode 110.With the wiring portion 25a while, on second dielectric film 24, form counterelectrode 25c as second wiring layer 25.By the opening portion 24a that is arranged in second dielectric film 24 counterelectrode 25c is electrically connected to first wiring layer 23.
For example, counterelectrode 25c is formed by Al and polysilicon.Wiring layer 14 is also formed by Al and polysilicon.
In the present embodiment, remove wiring layer 14, thereby form the top slit of height corresponding to the thickness of the wiring layer of removing from travelling electrode 110 14 from travelling electrode 100.By the acceleration on the variation detection Z-direction that detects the distance between travelling electrode 110 and the counterelectrode 25c.
Therefore, by on second dielectric film 24, counterelectrode 25c being set, the distance between travelling electrode 110 and the counterelectrode 25c is reduced to than using first wiring layer 23 as the little value of the situation of fixed electrode.Therefore, the output area of detected value is broadened.
The 19 embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of the 19 embodiment.Figure 28 A is the schematic plan view according to the semiconductor dynamic quantity sensor of present embodiment.Figure 28 B is the sectional view along the line C-C of Figure 28 A.In Figure 28 A and 28B, only show periphery 19 and moveable part 110, omitted miscellaneous part.
Shown in Figure 28 A, in the present embodiment, two positions, promptly the side surface 112 of travelling electrode 110 and itself and side surface 112 opposite side surfaces 113 are provided with beam part 100.Independently beam part 100 connects the periphery 19 and the travelling electrode 110 that will be positioned on the reciprocal side.Therefore, shown in Figure 28 B, in the middle of equal two side surfaces 114 and 115 perpendicular to the side surface 112 of travelling electrode 110 and 113, the side surface 114 of travelling electrode 110 is more farther from beam part 100 than side surface 115, and mobile range is big, and then the mobile range than side surface 114 is little more to approach the side surface 115 of beam part 110.In this case, the beam part is twisted along moving direction.
Shown in Figure 28 B, cap portion 20 has first wiring layer 23 as fixed electrode, with its division and be arranged in the respective regions of the travelling electrode 110 relative with side surface 114 and side surface 115.
Therefore, when Z-direction moved, a sidesway of its adjacent side surfaces 114 was to first wiring layer 23 at travelling electrode 110, and a side adjacent with side surface 115 of travelling electrode 110 then moves away from first wiring layer 23.On the contrary, when a side of the adjacent side surfaces 114 of travelling electrode 110 moved away from first wiring layer 23, a sidesway of the adjacent side surfaces 115 of travelling electrode 110 was to first wiring layer 23.By detecting the changes in capacitance between the mobile travelling electrode 110 and first wiring layer 23, can detect the acceleration on the Z-direction.
Under situation shown in Figure 28, wiring layer 14 is not set in travelling electrode 110.Yet, will recognize easily, also wiring layer 14 can be set therein.As shown in figure 27, also can divide counterelectrode 25c and it is arranged on the respective side of travelling electrode 110 of adjacent side surfaces 114 in the cap portion 20 and side surface 115.
As mentioned above, also can provide and be connected the beam part 100 of working as travelling electrode 110 and detect acceleration on the Z-direction by two side surfaces 112 and 113 for travelling electrode 110.
The 20 embodiment
In the present embodiment, with only explanation and the part different according to the semiconductor devices of the 18 embodiment.Figure 29 A is the schematic plan view according to the semiconductor dynamic quantity sensor of present embodiment.Figure 29 B is the sectional view along the line D-D of Figure 29 A.In Figure 29 A and 29B, only show periphery 19 and travelling electrode 110, omitted miscellaneous part.
Shown in Figure 29 A, on a side of the adjacent side surfaces 115 of travelling electrode 110, provide two through holes 116 that will be provided with along direction perpendicular to side surface 115.Place the part between the through hole 116 to be used as beam part 110.Beam part 110 is parts of first silicon layer 11, and is fixed to second silicon layer 12 by insulating barrier 13.Correspondingly, by distortion beam part 100, allow the adjacent side surfaces 114 of travelling electrode 110 and 115 respective side to move along Z-direction.
Therefore, according to the mode identical with the 19 embodiment, the variation of the distance between one side of the adjacent side surfaces 114 by detecting first wiring layer 23 and travelling electrode 110, and the variation of the distance between the side of the adjacent side surfaces 115 of first wiring layer 23 and travelling electrode 110 detects the acceleration on the Z-direction.
As shown in figure 24, a large amount of through hole 111 can also be set in travelling electrode 110.Can also detect the variation of the distance between each in the side of counterelectrode 25c shown in Figure 27 and adjacent side surfaces 114 and 115, rather than the variation of the distance between in the side of first wiring layer 23 and adjacent side surfaces 114 and 115 each.
Therefore, by beam part being set in the scope that is provided at travelling electrode 110 and making the structure of its distortion, can detect the acceleration on the Z-direction.
Other embodiment
In each of the foregoing description, show the semiconductor devices that is provided with hermetic unit 25b.Yet hermetic unit 25b is used for seal sensor structure 15 to 17, therefore it need not be arranged in the semiconductor devices.In other words, semiconductor devices can also have the structure that is not provided with hermetic unit 25b.
In each of the foregoing description, n type single crystal silicon is used for the silicon layer 11 of Sensor section 10 and each of 12.Yet, for example, also can adopt N +Type monocrystalline silicon.Although silicon substrate 21 of Shi Yonging and each in silicon layer 11 and 12 all have high concentration before this, but also can use by foreign ion being injected into the substrate that obtains in low concentration substrate and the low concentration layer and layer, perhaps use separately the concentration by utilizing its entire portion of raisings such as gaseous impurities diffusion method or only improve substrate that its surperficial concentration obtains and layer.
In each of the foregoing description, silicon substrate 21 is used for cap portion 20.Yet, also may use insulating materials such as glass.This has eliminated the necessity of first dielectric film 22, allows first wiring layer 23 is formed directly on the insulating materials.
First wiring layer 23 can also be formed by DOPOS doped polycrystalline silicon.In addition, DOPOS doped polycrystalline silicon can also be used for second wiring layer 25.Under the situation of using polysilicon, tie in conjunction with forming silicon one silicon by room temperature, thereby improve mechanical strength and stability.In this case, can be only on the bonding welding pad part of bonding that is used to go between, form the Al layer.For further simplification, can on the bonding welding pad part, form Al, Au and Cu printed layers by ink-jet method, silk screen print method etc., and carry out heat treatment as required, with raising adhesive force, and with respect to described zone execution lead-in wire bonding.
In the 12 embodiment, projection 60 is set in Sensor section 10.Yet, can also carry out upside-down mounting with respect to cap portion 20 (chou closes) is installed.In this case, can further reduce to be applied to stress on the Sensor section 10 from the outside.
In the 12 and 13 embodiment, in the face of on the side of Sensor section 10 IC circuit part 50 is set at cap portion 20.Yet, also can promptly, IC circuit part 50 be set on the side with circuit board 70 being attached on the relative side, the side of Sensor section 10 with cap portion 20.
In the 14 and 15 embodiment, show and have the related circuit part 81 that only is formed in its surperficial surface layer part and 91 chip 80 and 90.Yet they are exemplary, also can with the surface layer part of above-mentioned surperficial facing surfaces in circuit part is set.In this case, can be arranged on two lip-deep related circuit parts with suitable connection of 90 electrode by extending through chip 80.
Not only the travelling electrode 110 that moves along Z-direction shown in the 16 to the 20 embodiment each can be used for acceleration transducer, but also can be (in this case used as the drive electrode of Gyro sensor, detecting electrode is as being parallel to the electrode that substrate with broach shape moves), perhaps used as the detecting electrode of Gyro sensor (in this case, travelling electrode 110 is as being parallel to the electrode that substrate with broach shape moves).
In the above-described embodiments, illustrated and be used to separately detect on the Z-direction or at each acceleration transducer perpendicular to the acceleration on the direction of Z-direction.Yet, also can make double-axel acceleration sensor, the acceleration transducer that wherein will be used to detect the acceleration transducer of the acceleration on the Z-direction and be used for the acceleration of detection of vertical on the direction of Z-direction is integrated in single chip.Similarly, also can will can detect respectively along Z axle, integrated on single chip perpendicular to the sensor of the acceleration of the Y-axis of X-axis and Z axle along X-axis and edge.In this case, can be by hermetic unit 25b separately around each of the acceleration transducer that is used for detecting each acceleration on axially, perhaps can be by single hermetic unit 25b around all acceleration transducers.
Although describe the present invention with reference to its preferred embodiment, should be understood that, the invention is not restricted to described preferred embodiment and structure.The present invention is intended to contain various modifications and equivalents.In addition, although described various combination and structure are preferred, other comprise more or less or only combination of elements and structure be also within the spirit and scope of the present invention.

Claims (15)

1. semiconductor devices comprises:
Tabular sensor element (10) with surface, it comprises sensor construction (15 to 17) in the surface portion that is arranged on this sensor element (10), around the periphery (19) of described sensor construction (15 to 17); And
Be attached to the tabular cap element (20) on the described surface of described sensor element (10), wherein:
Described cap element (20) has the wiring pattern part (23 to 25) in the face of described sensor element (10);
Described wiring pattern part (23 to 25) comprising: be formed on first wiring layer (23) on described cap element (20) and Sensor section (10) facing surfaces; Be arranged on first dielectric film (24) on described first wiring layer (23); And second wiring layer (25) that comprises wiring portion (25a) and hermetic unit (25b), described wiring portion (25a) is arranged on described first wiring layer (23) that exposes from described first dielectric film (24), and described hermetic unit (25b) has ring-type and in the face of described periphery (19);
Described hermetic unit (25b) is arranged on described first dielectric film (24), thereby makes described hermetic unit (25b) and described first wiring layer (23) electric insulation;
Described hermetic unit (25b) is attached to described periphery (19), thereby described sensor construction (15 to 17) is sealed and is contained in the space that is limited by described cap element (20) and described sensor element (10);
Described wiring portion (25a) and described sensor construction (15 to 17) coupling; And
Described wiring portion (25a) is also exposed from described space, thereby makes described sensor construction (15 to 17) and described outer member coupling.
2. semiconductor devices comprises:
Tabular sensor element (10) with surface, it comprises the sensor construction (15 to 17) in the surface portion that is arranged on this sensor element (10), the periphery (19) that centers on described sensor construction (15 to 17) and the coupling part (18) that is used to be connected to outer member, and described coupling part (18) are arranged on the outside of described periphery (19); And
Be attached to the tabular cap element (20) on the described surface of described sensor element (10), wherein:
Described cap element (20) has the wiring pattern part (23 to 25) in the face of described sensor element (10);
Described wiring pattern part (23 to 25) comprising: be formed on first wiring layer (23) on described cap element (20) and Sensor section (10) facing surfaces; Be arranged on first dielectric film (24) on described first wiring layer (23); And second wiring layer (25) that comprises wiring portion (25a) and hermetic unit (25b), described wiring portion (25a) is arranged on described first wiring layer (23) that exposes from described first dielectric film (24), and described hermetic unit (25b) has ring-type and in the face of described periphery (19); Described hermetic unit (25b) is arranged on described first dielectric film (24), thereby makes described hermetic unit (25b) and described first wiring layer (23) electric insulation;
Described hermetic unit (25b) is attached to described periphery (19), thereby described sensor construction (15 to 17) is sealed and is contained in the space that is limited by described cap element (20) and described sensor element (10);
Described wiring portion (25a) and described sensor construction (15 to 17) coupling; And
Described wiring portion (25a) also is coupled with described coupling part (18), thereby makes described sensor construction (15 to 17) by described coupling part (18) and described wiring portion (25a) and described outer member coupling.
3. semiconductor devices according to claim 1 and 2, wherein:
Described first dielectric film (24) has first opening (24a), and described opening surface is to described sensor construction (15 to 17), thereby described first wiring layer (23) is exposed from described first dielectric film (24) in described first opening (24a).
4. semiconductor devices according to claim 2, wherein:
Described coupling part (18) will go between (31) be connected to described outer member.
5. semiconductor devices according to claim 1, wherein:
Described wiring portion (25a) contact is used to connect the lead-in wire (31) of described outer member, thereby makes described sensor construction (15 to 17) by described wiring portion (25a) and described lead-in wire (31) and described outer member coupling.
6. semiconductor devices according to claim 2 also comprises:
Be used for the projection (60) that flip-chip is installed, wherein:
Described projection (60) is attached to described coupling part (18).
7. semiconductor devices according to claim 1 and 2, wherein:
Described cap element (20) also comprises in the surface portion that is arranged on described cap element (20) and back to the IC circuit part (50) of described sensor element (10).
8. semiconductor devices according to claim 1 and 2, wherein:
Described cap element (20) also comprises in the surface portion that is arranged on described cap element (20) and faces the IC circuit part (50) of described sensor element (10).
9. semiconductor devices according to claim 2, wherein:
Described first dielectric film (24) also has another first opening (24a), and it faces described sensor construction (15 to 17), thereby described first wiring layer (23) is exposed from described first dielectric film (24) in described another first opening (24a);
Described second wiring layer (25) also comprises another wiring portion (25a), and it is arranged on described first wiring layer (23) that exposes from described first dielectric film (24) in described another first opening (24a);
Make described another wiring portion (25a) and described sensor construction (15 to 17) coupling;
Also make described another wiring portion (25a) and described coupling part (18) coupling; And
Make described wiring portion (25a) point to a direction different with described another wiring portion (25a).
10. semiconductor devices according to claim 1 and 2, wherein:
Described cap element (20) also comprises recessed portion (21a), and it faces described sensor construction (15 to 17) at least, and is not arranged on the described wiring portion (25a).
11. semiconductor devices according to claim 1 and 2, wherein:
Described cap element (20) has silicon substrate (21), is positioned at second dielectric film (22) and first conduction contact part (26) on the described silicon substrate (21);
Described second dielectric film (22) has second opening (22a), so that expose described silicon substrate (21) by described second opening (22a);
Described first conduction contact part (26) is arranged in described second opening (22a), and is electrically connected described silicon substrate (21) and described first wiring layer (23);
Described wiring pattern part (23 to 25) also comprises second conduction contact part (27), and it is arranged in described first opening (24a);
Described second conduction contact part (27) is electrically connected described first wiring layer (23) and described hermetic unit (25b); And
Described silicon substrate (21) is electrically connected the described periphery (19) of described sensor element (10) by described first conduction contact part (26), described first wiring layer (23), described second conduction contact part (27) and described hermetic unit (25b).
12. semiconductor devices according to claim 11, wherein:
Described sensor element (10) has the SOI substrate that comprises first silicon layer (11), second silicon layer (12) and insulating barrier (13);
Described sensor construction (15 to 17) is arranged in described first silicon layer (11);
Described insulating barrier (13) is clipped between described first silicon layer (11) and described second silicon layer (12);
Described periphery (19) is arranged in described first silicon layer (11);
Described insulating barrier (13) has the 3rd opening that substrate contact portion (11a) wherein is set; And
Described substrate contact portion (11a) is arranged between described periphery (19) and described second silicon layer (12), to be electrically connected described periphery (19) and described second silicon layer (12).
13. semiconductor devices according to claim 12, wherein:
Described sensor element (10) has the 3rd wiring layer (14) that is positioned on described first silicon layer (11); And
Described cap element (20) is attached to described the 3rd wiring layer (14).
14. semiconductor devices according to claim 1 and 2, wherein:
Described sensor construction (15 to 17) comprises the travelling electrode (110) that can move in described sensor element (10);
Described first wiring layer (23) is in the face of described travelling electrode (110); And
Described sensor element (10) detects the variable in distance between described first wiring layer (23) and the described travelling electrode (110), thus the acceleration of described sensor element (10) detection of vertical on the direction on the surface of described sensor element (10).
15. semiconductor devices according to claim 14, wherein:
Described wiring pattern part (23 to 25) also comprises counterelectrode (25c);
Described counterelectrode (25c) is arranged on described first dielectric film (24), and in the face of described travelling electrode (110); And
Described sensor element (10) detects the variable in distance between described travelling electrode (110) and the described counterelectrode (25c), and it is corresponding to the variable in distance between described first wiring layer (23) and the described travelling electrode (110).
CN2011100582901A 2007-07-02 2008-07-01 Semiconductor device and manufacturing method of the same Pending CN102180436A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103917482A (en) * 2011-10-31 2014-07-09 意法半导体股份有限公司 Micro -electro -mechanical device with buried conductive regions, and manufacturing process thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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JP5314979B2 (en) * 2008-09-22 2013-10-16 アルプス電気株式会社 MEMS sensor
WO2010032820A1 (en) * 2008-09-22 2010-03-25 アルプス電気株式会社 Mems sensor
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JP5237733B2 (en) * 2008-09-22 2013-07-17 アルプス電気株式会社 MEMS sensor
JP4858547B2 (en) * 2009-01-09 2012-01-18 株式会社デンソー Semiconductor device and manufacturing method thereof
JP5191927B2 (en) * 2009-02-26 2013-05-08 アルプス電気株式会社 MEMS sensor and manufacturing method thereof
JPWO2010104064A1 (en) * 2009-03-13 2012-09-13 アルプス電気株式会社 MEMS sensor
JP5255536B2 (en) * 2009-08-10 2013-08-07 アルプス電気株式会社 MEMS sensor
WO2011111541A1 (en) * 2010-03-09 2011-09-15 アルプス電気株式会社 Mems sensor
JP5299353B2 (en) * 2010-05-20 2013-09-25 株式会社デンソー Semiconductor device
JP5527015B2 (en) 2010-05-26 2014-06-18 セイコーエプソン株式会社 Element structure, inertial sensor, electronic equipment
DE102010063471B4 (en) * 2010-12-20 2019-01-24 Robert Bosch Gmbh Microelectromechanical element
CN103121658B (en) * 2011-11-21 2015-10-28 水木智芯科技（北京）有限公司 The silicon epitaxy manufacture method of capacitive triaxial micro gyroscope
JP5874609B2 (en) * 2012-03-27 2016-03-02 株式会社デンソー Semiconductor device and manufacturing method thereof
US9040355B2 (en) * 2012-07-11 2015-05-26 Freescale Semiconductor, Inc. Sensor package and method of forming same
CN105307092B (en) 2015-12-04 2018-03-23 歌尔股份有限公司 MEMS microphone, the integrated morphology of environmental sensor and manufacture method
EP3385762A1 (en) * 2017-04-03 2018-10-10 Indigo Diabetes N.V. Optical assembly with hermetically sealed cover cap

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1194506A (en) * 1997-06-19 1999-04-09 St Microelectron Srl Sensor
KR20010057139A (en) * 1999-12-18 2001-07-04 이형도 Method for hermetic packaging in microsensors
US6479320B1 (en) * 2000-02-02 2002-11-12 Raytheon Company Vacuum package fabrication of microelectromechanical system devices with integrated circuit components
CN1598596A (en) * 2003-09-16 2005-03-23 日立金属株式会社 Acceleration sensor
WO2007061059A1 (en) * 2005-11-25 2007-05-31 Matsushita Electric Works, Ltd. Sensor device and method for manufacturing same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1194506A (en) * 1997-06-19 1999-04-09 St Microelectron Srl Sensor
KR20010057139A (en) * 1999-12-18 2001-07-04 이형도 Method for hermetic packaging in microsensors
US6479320B1 (en) * 2000-02-02 2002-11-12 Raytheon Company Vacuum package fabrication of microelectromechanical system devices with integrated circuit components
CN1598596A (en) * 2003-09-16 2005-03-23 日立金属株式会社 Acceleration sensor
WO2007061059A1 (en) * 2005-11-25 2007-05-31 Matsushita Electric Works, Ltd. Sensor device and method for manufacturing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103917482A (en) * 2011-10-31 2014-07-09 意法半导体股份有限公司 Micro -electro -mechanical device with buried conductive regions, and manufacturing process thereof
US9388038B2 (en) 2011-10-31 2016-07-12 Stmicroelectronics S.R.L. Micro-electro-mechanical device with buried conductive regions, and manufacturing process thereof
CN103917482B (en) * 2011-10-31 2017-06-23 意法半导体股份有限公司 Micro electro mechanical device and its manufacturing process with the conductive region buried

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Application publication date: 20110914