CN102176413A - Thin-film transistor forming method and thin-film transistor - Google Patents
Thin-film transistor forming method and thin-film transistor Download PDFInfo
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- CN102176413A CN102176413A CN201110074292XA CN201110074292A CN102176413A CN 102176413 A CN102176413 A CN 102176413A CN 201110074292X A CN201110074292X A CN 201110074292XA CN 201110074292 A CN201110074292 A CN 201110074292A CN 102176413 A CN102176413 A CN 102176413A
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Abstract
The embodiment of the invention discloses a thin-film transistor forming method and a thin-film transistor. The thin-film transistor forming method comprises the following steps after a channel area is formed by etching: dissociating phosphorus-containing gas with a glow discharge device to obtain plasma; and performing plasma treatment on the surface of the channel area formed by etching with the plasma. The invention also provides a thin-film transistor which is characterized in that: phosphorus atoms are doped in the amorphous silicon of the channel area of the thin-film transistor, and a channel protection layer is covered above the channel area. According to the technical scheme provided by the embodiment of the invention, phosphorus atoms are doped and injected into the amorphous silicon of the channel area of the thin-film transistor, and the current carriers in the channel area are obviously increased, thus the on-state current of the thin-film transistor can be effectively increased (by about 30%), and the display quality of TFT-LCD (thin-film transistor-liquid crystal display) products can be obviously improved.
Description
Technical field:
The present invention relates to technical field of liquid crystal display, relate in particular to a kind of thin-film transistor formation method and thin-film transistor.
Background technology:
Thin Film Transistor-LCD (TFT-LCD) has a wide range of applications in the modern life: as the display of mobile phone display screen, computer, the display screen of MP3, MP4 etc.Display frame is even, high-res, nothing is harassed, contrast is high to be one of key request to high-quality TFT-LCD, closely-related therewith is electrical parameter-ON state current (Ion) of TFT, ON state current is as important electrical parameter, display effect to TFT-LCD has very large influence, when ON state current is crossed when low, because undercharge can cause display frame inhomogeneous, contrast descends, display defects such as cross effect, quality generation to TFT-LCD has a strong impact on, simultaneously, also demand requiring to improve the ON state current of thin-film transistor urgently along with market increasing to the TFT-LCD product demand of high-res.
Summary of the invention
For solving the problems of the technologies described above, the object of the present invention is to provide a kind of thin-film transistor formation method and thin-film transistor, with the ON state current of raising thin-film transistor, and then the display quality of raising TFT-LCD product.
For addressing the above problem, the embodiment of the invention provides following technical scheme:
A kind of thin-film transistor formation method after the moulding of channel region etching, comprising:
Utilize glow discharge device that phosphorous gas is dissociated, obtain plasma;
Adopt described plasma that plasma treatment is carried out on the channel region surface that etching forms.
Preferably, described phosphorous gas is: PH
3, or PH
3With H
2, N
2, HN
3, one or more gases among Ar, the He mist.
Preferably, described glow discharge device is carved board for doing.
Preferably, after plasma treatment, also comprise:
Carry out the deposition of channel protective layer, described channel protective layer covers described channel region.
Preferably, adopt chemical vapour deposition (CVD), sputter, evaporation or coating process to form described channel protective layer.
Preferably, described glow discharge device is the chemical vapour deposition (CVD) board.
Preferably, being deposited on of described plasma treatment step and channel protective layer finished in the same equipment or finished in different equipment.
The present invention also provides a kind of thin-film transistor:
Be doped with phosphorus atoms in the amorphous silicon of described thin-film transistor channel region;
Described channel region top is coated with channel protective layer.
Compared with prior art, technique scheme has the following advantages:
The technical scheme that the embodiment of the invention provided, phosphorus atoms has been injected in amorphous silicon doping at thin-film transistor channel region, the quantity of the charge carrier in the described channel region can significantly improve, therefore the ON state current (improving about 30%) of thin-film transistor can be effectively improved, and then the display quality of TFT-LCD product can be significantly improved.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 forms the method flow schematic diagram for the thin-film transistor that embodiment one provides.
Embodiment
The embodiment of the invention provides a kind of thin-film transistor formation method and thin-film transistor, and this scheme can effectively improve the ON state current of thin-film transistor, and then improves the display quality of TFT-LCD product.
Described thin-film transistor formation method after the moulding of channel region etching, comprising:
Utilize glow discharge device that phosphorous gas is dissociated, obtain plasma;
Adopt described plasma that plasma treatment is carried out on the channel region surface that etching forms.
The present invention also provides following a kind of thin-film transistor:
Be doped with phosphorus atoms in the amorphous silicon of described thin-film transistor channel region;
Described channel region top is coated with channel protective layer.
The technical scheme that the embodiment of the invention provided, phosphorus atoms has been injected in amorphous silicon doping at thin-film transistor channel region, the quantity of the charge carrier in the described channel region can significantly improve, therefore the ON state current (improving about 30%) of thin-film transistor can be effectively improved, and then the display quality of TFT-LCD product can be significantly improved.
It more than is the application's core concept, below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that is obtained under the creative work prerequisite.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.
Embodiment one:
As shown in Figure 1, for thin-film transistor provided by the invention forms the method flow schematic diagram, this method specifically may further comprise the steps:
Step S101 carries out the channel region etching;
Step S102 after the moulding of channel region etching, utilizes glow discharge device that phosphorous gas is dissociated, and obtains plasma;
Step S103 adopts described plasma that plasma treatment is carried out on the channel region surface that etching forms.
Wherein, among the described step S102, described phosphorous gas can be PH
3, or PH
3With H
2, N
2, HN
3, one or more gases among Ar, the He mist.
In described step S103, the phosphorus atoms that presents plasmoid is injected into or is doped in the amorphous silicon of channel region, and therefore, the quantity of the charge carrier in the described channel region can significantly improve, and then can effectively improve the ON state current of thin-film transistor.
Usually, the etching of thin film transistor channel is finished by the dried board of carving, so the glow discharge device described in the present embodiment can be to do to carve board.In addition, described glow discharge device can also can produce the device of plasma for other.Above-mentioned plasma treatment step can order be carried out after channel etching, need not more exchange device, has higher efficient.
In addition, above-mentioned thin film transistor channel top can also be provided with the protective layer that directly contacts with raceway groove, and described protective layer carries out covering protection to channel region, therefore, as shown in Figure 1, after above-mentioned steps S103, can also comprise:
Step S104 carries out the deposition of channel protective layer, and described channel protective layer covers described channel region.
Plasma treatment step is carried out before can being arranged on the channel protective layer deposition step.Usually adopt chemical vapour deposition (CVD) (Chemical Vapor Deposition in the prior art; CVD) technology forms described channel protective layer; as: plasma enhanced chemical vapor deposition PECVD), low-pressure chemical vapor deposition (LPCVD) or aumospheric pressure cvd (APCVD) etc.; this step is finished by the chemical vapour deposition (CVD) board usually; therefore; described glow discharge device can also be the chemical vapour deposition (CVD) board; so that need not more exchange device in the follow-up channel protective layer deposition step, enhance productivity.
In addition, described channel protective layer can also form by sputter, evaporation or coating process.The deposition of plasma plasma treatment step and channel protective layer can be finished in same equipment (as the chemical vapour deposition (CVD) board), also can finish in different equipment.
In the thin-film transistor formation method that present embodiment provides, at dissimilar glow discharge device, can be set to it different technological parameters is set, by adjusting the related process parameter, make thin-film transistor in raising self ON state current, do not influence its leakage current.
In the thin-film transistor formation method that present embodiment provides, phosphorus atoms has been injected in amorphous silicon doping at channel region, the quantity of the charge carrier in the described channel region can significantly improve, therefore the ON state current (improving about 30%) of thin-film transistor can be effectively improved, and then the display quality of TFT-LCD product can be significantly improved.
Embodiment two:
Corresponding to the method that provides among the embodiment one, present embodiment provides a kind of application thin-film transistor that this method forms, and is as described below:
Be doped with phosphorus atoms in the amorphous silicon of described thin-film transistor channel region;
Described channel region top is coated with channel protective layer.
Wherein, the phosphorus atoms of channel region can mix by the plasma injection technology and form, and described channel protective layer can form by chemical vapor deposition method.
Because present embodiment is the product embodiments of embodiment one correspondence, its roughly the same the part cross-references get final product, do not repeat them here.
In the thin-film transistor that present embodiment provides, be doped with phosphorus atoms in the amorphous silicon of channel region, the quantity of the charge carrier in the described channel region is higher, so ON state current of described raising thin-film transistor also higher (with respect to existing thin-film transistor high about 30%), when it is applied in the TFT-LCD product, can significantly improve the display quality of TFT-LCD product.
Various piece adopts the mode of going forward one by one to describe in this specification, and what each part stressed all is and the difference of other parts that identical similar part is mutually referring to getting final product between the various piece.To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined herein General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments.Therefore, the present invention will can not be restricted to embodiment illustrated herein, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (8)
1. a thin-film transistor formation method is characterized in that, after the moulding of channel region etching, comprising:
Utilize glow discharge device that phosphorous gas is dissociated, obtain plasma;
Adopt described plasma that plasma treatment is carried out on the channel region surface that etching forms.
2. according to right 1 described thin-film transistor formation method, it is characterized in that:
Described phosphorous gas is: PH
3, or PH
3With H
2, N
2, HN
3, one or more gases among Ar, the He mist.
3. according to right 1 or 2 described thin-film transistor formation methods, it is characterized in that:
Described glow discharge device is carved board for doing.
4. according to right 1 described thin-film transistor formation method, it is characterized in that, after plasma treatment, also comprise:
Carry out the deposition of channel protective layer, described channel protective layer covers described channel region.
5. according to right 4 described thin-film transistor formation methods, it is characterized in that:
Adopt chemical vapour deposition (CVD), sputter, evaporation or coating process to form described channel protective layer.
6. according to right 4 or 5 described thin-film transistor formation methods, it is characterized in that:
Described glow discharge device is the chemical vapour deposition (CVD) board.
7. according to right 4 or 5 described thin-film transistor formation methods, it is characterized in that:
Being deposited on of described plasma treatment step and channel protective layer finished in the same equipment or finished in different equipment.
8. thin-film transistor is characterized in that:
Be doped with phosphorus atoms in the amorphous silicon of described thin-film transistor channel region;
Described channel region top is coated with channel protective layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110074292XA CN102176413A (en) | 2011-03-25 | 2011-03-25 | Thin-film transistor forming method and thin-film transistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110074292XA CN102176413A (en) | 2011-03-25 | 2011-03-25 | Thin-film transistor forming method and thin-film transistor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103824779A (en) * | 2014-02-18 | 2014-05-28 | 北京京东方显示技术有限公司 | Thin film transistor, manufacturing method thereof, TFT (thin film transistor) array substrate and display device |
| CN107275191A (en) * | 2017-06-30 | 2017-10-20 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT) and preparation method, array base palte and display panel |
| WO2019001115A1 (en) * | 2017-06-30 | 2019-01-03 | 京东方科技集团股份有限公司 | Thin-film transistor and manufacturing method therefor, array substrate and display apparatus |
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| CN1401135A (en) * | 2000-06-26 | 2003-03-05 | 皇家菲利浦电子有限公司 | Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same |
| CN1423841A (en) * | 2000-12-21 | 2003-06-11 | 皇家菲利浦电子有限公司 | Thin film transistors |
| CN1702843A (en) * | 2004-05-25 | 2005-11-30 | 三星电子株式会社 | Phosphorous doping methods of manufacturing field effect transistors having multiple stacked channels |
| US20090212289A1 (en) * | 2004-07-27 | 2009-08-27 | Feng-Yuan Gan | Thin film transistor and method for fabricating same |
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| CN1401135A (en) * | 2000-06-26 | 2003-03-05 | 皇家菲利浦电子有限公司 | Bottom gate type thin film transistor, its manufacturing method and liquid crystal display device using the same |
| CN1423841A (en) * | 2000-12-21 | 2003-06-11 | 皇家菲利浦电子有限公司 | Thin film transistors |
| CN1702843A (en) * | 2004-05-25 | 2005-11-30 | 三星电子株式会社 | Phosphorous doping methods of manufacturing field effect transistors having multiple stacked channels |
| US20090212289A1 (en) * | 2004-07-27 | 2009-08-27 | Feng-Yuan Gan | Thin film transistor and method for fabricating same |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103824779A (en) * | 2014-02-18 | 2014-05-28 | 北京京东方显示技术有限公司 | Thin film transistor, manufacturing method thereof, TFT (thin film transistor) array substrate and display device |
| US9711356B2 (en) | 2014-02-18 | 2017-07-18 | Boe Technology Group Co., Ltd. | Method for manufacturing thin-film transistor by implanting ions into channel region for lowering leakage current |
| CN107275191A (en) * | 2017-06-30 | 2017-10-20 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT) and preparation method, array base palte and display panel |
| WO2019001115A1 (en) * | 2017-06-30 | 2019-01-03 | 京东方科技集团股份有限公司 | Thin-film transistor and manufacturing method therefor, array substrate and display apparatus |
| WO2019001018A1 (en) * | 2017-06-30 | 2019-01-03 | 京东方科技集团股份有限公司 | Thin film transistor and preparation method, array substrate and display panel |
| CN107275191B (en) * | 2017-06-30 | 2019-08-27 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT) and preparation method, array substrate and display panel |
| US11217697B2 (en) | 2017-06-30 | 2022-01-04 | Boe Technology Group Co., Ltd. | Thin-film transistor and manufacturing method therefor, array substrate and display device |
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Application publication date: 20110907 |