CN102172575A - Piezoelectric micro machining energy transducer - Google Patents
Piezoelectric micro machining energy transducer Download PDFInfo
- Publication number
- CN102172575A CN102172575A CN2011100587303A CN201110058730A CN102172575A CN 102172575 A CN102172575 A CN 102172575A CN 2011100587303 A CN2011100587303 A CN 2011100587303A CN 201110058730 A CN201110058730 A CN 201110058730A CN 102172575 A CN102172575 A CN 102172575A
- Authority
- CN
- China
- Prior art keywords
- piezoelectric layer
- pmut
- transducer
- piezoelectric
- vibrating membrane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Transducers For Ultrasonic Waves (AREA)
Abstract
The invention relates to a piezoelectric micro machining energy transducer, which comprises a pore cavity and a vibrating membrane on the surface of the pore cavity, wherein the vibrating membrane consists of a piezoelectric layer (2), an upper electrode (3) on the upper surface of the piezoelectric layer (2) and a lower electrode (4) on the lower surface of the piezoelectric layer (2); and furthermore, the vibrating membrane protrudes outwards relative to the pore cavity. A single piezoelectric layer dome structure is adopted in the piezoelectric micro machining energy transducer, so that the electromechanical conversion efficiency and the product performance are greatly improved; meanwhile, the production process is simpler and more reliable.
Description
Technical field
The present invention relates to microelectric technique, be specifically related to a kind of piezoelectricity processing transducer that declines, especially be applied in the medical electronics.
Background technology
Piezoelectric micromachined ultrasonic transducer (pMUT) integrate piezoelectricity thin/thick film technology and silicon micromachining technology, utilize the beam mode of vibrating diaphragm to transmit and receive ultrasonic wave.At present, tradition pMUT elementary cell, structure as shown in Figure 1, truncated rectangular pyramids shape vestibule is provided with vibrating membrane, this vibrating membrane can equivalence be the double-layer plate of a peripheral binding constraint substantially, one deck is that piezoelectric layer 2(upper and lower surface respectively is provided with top electrode 3 and bottom electrode 4), one deck is that silicon substrate 1 extends to the silicon elastic layer under the piezoelectric layer 2.The mechanical-electric coupling performance of pMUT vibrating diaphragm is by the size decision of material properties, vibrating diaphragm thickness and the vibrating diaphragm of vibrating diaphragm, and these parameters can be controlled by micro fabrication.For improving the performance of pMUT unit, a lot of scholars have done a large amount of work at aspects such as structural design and processing technologys, but do not obtain gratifying effect, still do not having commercial traditional transducers performance excellent aspect sensitivity and the mechanical-electric coupling efficient based on the transducer of pMUT.Optimal design can make the performance of transducer get a promotion, but its effect is limited.For satisfying the application in medical imaging field, the operating frequency of transducer need reach the MHz magnitude, generally can meet the demands by the size that reduces vibrating diaphragm, but this can reduce the efficient of transducer again.
Mainly there is the problem of two aspects in existing pMUT structure, the one, configuration aspects, usually vibration film mainly is made up of two parts, be piezoelectric layer and non-piezoelectric layer, when transducer is worked, non-piezoelectric layer will occupy the only about half of energy of total kinetic energy, because non-piezoelectric layer does not have piezo-electric effect kinetic energy can not be converted into electric energy, so this part energy has just been fallen by full consumption, the 2nd, process aspect, because piezoelectric layer, the proportionate relationship between the thickness of non-piezoelectric layer and both thickness and the electromechanical coupling factor of transducer, resonant frequency is contacted directly, so in little process, must be controlled very accurately, yet with regard to present technology, also be had certain difficulty the accurate control of both thickness.These unfavorable factors have influenced the performance of transducer to a certain extent.
Summary of the invention
The technical issues that need to address of the present invention are, how a kind of piezoelectricity processing transducer that declines is provided, and can promote properties of product significantly, satisfy the application in fields such as medical imaging.
The technology of the present invention problem solves like this: make up a kind of piezoelectricity processing transducer that declines, comprise vestibule and surface vibration film thereof, described vibrating membrane only is made of the top electrode of piezoelectric layer and upper surface thereof and the bottom electrode of lower surface, that is: single-piezoelectric layer and do not comprise the silicon elastic layer.
According to the piezoelectricity provided by the invention processing transducer that declines, the described relatively vestibule of described vibrating membrane is to outer lug, that is: dome.
According to the piezoelectricity provided by the invention processing transducer that declines, described transducer comprises one or more pMUT unit, and each pMUT unit comprises a corresponding vestibule and surface vibration film thereof.
According to the piezoelectricity provided by the invention processing transducer that declines, it is circular that the cross section of described vestibule includes, but are not limited to, and the longitudinal section is a truncated rectangular pyramids shape.
The piezoelectricity provided by the invention processing transducer that declines adopts single-piezoelectric layer dome type pMUT structure, compares with existing pMUT structure, has following three main advantages in aspect:
1, structural behaviour aspect, 1. owing to be the single-piezoelectric layer diaphragm structure, so most of kinetic energy can convert electric energy to by piezo-electric effect, the electromechanical conversion efficiency of unit is expected to get a promotion; 2. dome replaces flat-top, and breaking through dome is traditional thinking of defective, has promoted properties of product on the contrary;
2, process aspect, the thickness that only needs here accurately to control piezoelectric layer gets final product, thus the complexity of the technology that reduces to a certain extent;
3,, verify that further the present invention's more traditional pMUT structure on the mechanical-electric coupling performance compared remarkable lifting by emulation and test.
Description of drawings
Further the present invention is described in detail below in conjunction with the drawings and specific embodiments.
Fig. 1 is the structural representation of traditional pMUT unit;
Fig. 2 is a single-piezoelectric layer dome type pMUT cellular construction schematic diagram of the present invention;
Fig. 3 is the vibrating membrane structural representation of pMUT shown in Figure 2 unit;
Fig. 4 is traditional pMUT structure vibrating diaphragm center displacement diagram;
Fig. 5 is a single-piezoelectric layer dome type pMUT structure vibrating diaphragm of the present invention center displacement diagram;
Fig. 6 is traditional pMUT structure effective electro-mechanical couple factor figure
Fig. 7 is single-piezoelectric layer dome type pMUT structure effective electro-mechanical couple factor figure of the present invention;
Fig. 8 is a single-piezoelectric layer dome type pMUT structural impedance curve map of the present invention;
Fig. 9 is a single-piezoelectric layer dome type pMUT structure simulation resultant impedance curve map of the present invention;
Figure 10 is a single-piezoelectric layer dome type pMUT structural experiment resultant impedance curve map of the present invention.
The specific embodiment
At first, basic structure of the present invention is described:
Shown in Fig. 2 and 3, single-piezoelectric layer dome type pMUT of the present invention compares with traditional pMUT unit the unit, and its vibration is touched does not have the silicon elastic layer, and replaces the piezoelectric layer 2 of flat-top with dome.Piezoelectric layer 2 surfaces still are provided with top electrode 3 and bottom electrode 4.
Second step, in conjunction with software emulation and the detailed comparative illustration of test performance advantage of the present invention, following structure one corresponding traditional pMUT structure and structure two corresponding single-piezoelectric layer dome type pMUT structures of the present invention:
The excitation of ㈠ DC voltage is the displacement situation at vibrating diaphragm center down
As shown in Figure 4, for structure one, when PZT(suggestion provides corresponding Chinese)/the Si(suggestion provides corresponding Chinese) ratio when being about 2.4, the displacement of vibrating diaphragm center reaches maximum, yet, as shown in FIG., this maximum point is subjected to the influence of PZT and Si thickness easily, unless in the technology of reality, can accurately control the thickness of each layer vibrating diaphragm, otherwise, be difficult to obtain the optimum vibration performance of vibrating diaphragm.As shown in Figure 5, for structure two, when prebuckling curvature was 1.7 times of PZT film thickness, vibrating diaphragm center displacement maximum only needed the thickness of the PZT of control preferably just can well hold the performance of structure in the manufacturing process of reality.In addition, when vibrating diaphragm thickness was suitable, structure two can produce bigger vibration displacement, structure one, and the thickness of PZT piezoelectric layer and Si substrate is respectively 10
, 4
The time, the maximum displacement at vibrating diaphragm center is 1.9
, and structure two, the PZT piezoelectric layer thickness is 13.6
, prebuckling curvature h is 23
The time, vibrating diaphragm center maximum displacement reaches 3.8
(＞1.9
).
The ㈡ effective electro-mechanical couple factor
By structure is carried out model analysis, obtain resonant frequency fr and anti-resonance frequency fa, and utilize formula
Calculate effective electro-mechanical couple factor
, the square root of mechanical energy that lossless, non-loaded piezoelectric vibrator stores when mechanical resonance that effective electro-mechanical couple factor is defined as and the ratio of whole energy of storage, effective electro-mechanical couple factor can well reflect the mechanical-electric coupling performance of oscillator.As shown in Figure 6, to structure one, the thickness of PZT piezoelectric layer and Si substrate is respectively 6
, 8
The time, effective electro-mechanical couple factor is 6.43%; As shown in Figure 7, structure two, PZT piezoelectric layer thickness are 13.6
, prebuckling curvature h is 44
The time, effective electro-mechanical couple factor is 15.06%(＞6.43%).As seen for the suitable vibrating diaphragm of thickness, the mechanical-electric coupling performance of the single-piezoelectric layer dome type pMUT structure that the present invention proposes is better than conventional pMUT structure.
㈢ is at the emulation and the result of the test of specific product example
For further verifying above-mentioned simulation result, adopt the PMN-PT monocrystalline piezoelectric material to make single-piezoelectric layer dome type pMUT construction unit, piezoelectric layer thickness is 15
, piezoelectric layer center curvature curvature is 13.4
1. simulation result
Adopt the accurate electric impedance analyzer of Agilent 4294A to record the impedance curve of unit, as shown in Figure 9, wherein: unit resonance frequency fr and anti-resonance frequency fa are respectively 145KHz, 150KHz, and what 200KHz was later is overtone frequency.In the humorous response analysis of ANSYS, the selecting frequency scope is 130KHz-170KHz, and the load step was 300 steps, and per step is spaced apart 200Hz.
2. result of the test
Measured result as shown in figure 10, contrast is found, simulation result and experimental result have uniformity preferably, the mechanical-electric coupling performance of unit is a little less than the result in the experiment test in the simulation calculation, this is likely that difference on the polarization condition causes, what import in the emulation is the parameter of monocrystalline bulk, and the monocrystalline bulk is to polarize under the condition of 10KV/cm usually, and the thin layer monocrystalline is to polarize under the condition of 93KV/cm in the experiment, so this is better than the monocrystalline bulk with regard to the performance that has caused the thin layer monocrystalline.
The above only is preferred embodiment of the present invention, and all equalizations of being done according to claim scope of the present invention change and modify, and all should belong to the covering scope of claim of the present invention.
Claims (3)
1. piezoelectricity processing transducer that declines comprises vestibule and surface vibration film thereof, it is characterized in that, described vibrating membrane only is made of the top electrode (3) of piezoelectric layer (2) and upper surface thereof and the bottom electrode (4) of lower surface.
2. according to the described piezoelectricity of the claim 1 processing transducer that declines, it is characterized in that the described relatively vestibule of described vibrating membrane is to outer lug.
3. according to claim 1 or the 2 described piezoelectricity processing transducer that declines, it is characterized in that described transducer comprises one or more unit, each unit comprises a corresponding vestibule and surface vibration film thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100587303A CN102172575A (en) | 2011-03-11 | 2011-03-11 | Piezoelectric micro machining energy transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100587303A CN102172575A (en) | 2011-03-11 | 2011-03-11 | Piezoelectric micro machining energy transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102172575A true CN102172575A (en) | 2011-09-07 |
Family
ID=44515927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100587303A Pending CN102172575A (en) | 2011-03-11 | 2011-03-11 | Piezoelectric micro machining energy transducer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102172575A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107920313A (en) * | 2016-08-27 | 2018-04-17 | 深圳市诺维创科技有限公司 | A kind of miniature piezoelectric ultrasonic transducer and preparation method thereof |
| CN108311361A (en) * | 2018-03-26 | 2018-07-24 | 浙江大学 | Micro electronmechanical piezoelectric supersonic wave transducer with the modality-specific vibration shape |
| CN108433744A (en) * | 2018-04-23 | 2018-08-24 | 中国科学院苏州生物医学工程技术研究所 | Ultrasonic transducer, ultrasonic probe, ultrasonic probe and ultrasonic hydrophone |
| CN109905824A (en) * | 2018-11-30 | 2019-06-18 | 美律电子(深圳)有限公司 | Loudspeaker structure |
| CN111644362A (en) * | 2020-06-12 | 2020-09-11 | 西安交通大学 | Embedded arched thin film driven PMUT unit and preparation method thereof |
| CN113245175A (en) * | 2021-06-21 | 2021-08-13 | 苏州晶方半导体科技股份有限公司 | Piezoelectric micromechanical ultrasonic transducer and manufacturing method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19726355A1 (en) * | 1997-06-21 | 1999-04-15 | Univ Ilmenau Tech | Micromechanical resonance structure |
| JP2001352111A (en) * | 2000-06-05 | 2001-12-21 | Matsushita Electric Ind Co Ltd | Film type piezoelectric ceramic element and its manufacturing method |
| US20030141783A1 (en) * | 2001-01-24 | 2003-07-31 | Koninklijke Philips Electronics, N.V. | Array of ultrasound transducers |
| US20030205947A1 (en) * | 2002-05-01 | 2003-11-06 | Klee Mareike Katharine | Ultrasonic membrane transducer for an ultrasonic diagnostic probe |
| CN201079775Y (en) * | 2007-07-25 | 2008-07-02 | 中国科学院声学研究所 | Silicon micro-piezoelectricity ultrasonic transducer |
| CN101712028A (en) * | 2009-11-13 | 2010-05-26 | 中国科学院声学研究所 | Thin-film ultrasonic transducer and preparation method thereof |
| CN101844130A (en) * | 2010-05-14 | 2010-09-29 | 中国科学技术大学 | Array silicon micro-ultrasonic transducer and manufacturing method thereof |
-
2011
- 2011-03-11 CN CN2011100587303A patent/CN102172575A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19726355A1 (en) * | 1997-06-21 | 1999-04-15 | Univ Ilmenau Tech | Micromechanical resonance structure |
| JP2001352111A (en) * | 2000-06-05 | 2001-12-21 | Matsushita Electric Ind Co Ltd | Film type piezoelectric ceramic element and its manufacturing method |
| US20030141783A1 (en) * | 2001-01-24 | 2003-07-31 | Koninklijke Philips Electronics, N.V. | Array of ultrasound transducers |
| US20030205947A1 (en) * | 2002-05-01 | 2003-11-06 | Klee Mareike Katharine | Ultrasonic membrane transducer for an ultrasonic diagnostic probe |
| CN201079775Y (en) * | 2007-07-25 | 2008-07-02 | 中国科学院声学研究所 | Silicon micro-piezoelectricity ultrasonic transducer |
| CN101712028A (en) * | 2009-11-13 | 2010-05-26 | 中国科学院声学研究所 | Thin-film ultrasonic transducer and preparation method thereof |
| CN101844130A (en) * | 2010-05-14 | 2010-09-29 | 中国科学技术大学 | Array silicon micro-ultrasonic transducer and manufacturing method thereof |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107920313A (en) * | 2016-08-27 | 2018-04-17 | 深圳市诺维创科技有限公司 | A kind of miniature piezoelectric ultrasonic transducer and preparation method thereof |
| CN108311361A (en) * | 2018-03-26 | 2018-07-24 | 浙江大学 | Micro electronmechanical piezoelectric supersonic wave transducer with the modality-specific vibration shape |
| CN108433744A (en) * | 2018-04-23 | 2018-08-24 | 中国科学院苏州生物医学工程技术研究所 | Ultrasonic transducer, ultrasonic probe, ultrasonic probe and ultrasonic hydrophone |
| CN108433744B (en) * | 2018-04-23 | 2023-11-28 | 中国科学院苏州生物医学工程技术研究所 | Ultrasonic transducer, ultrasonic probe and ultrasonic hydrophone |
| CN109905824A (en) * | 2018-11-30 | 2019-06-18 | 美律电子(深圳)有限公司 | Loudspeaker structure |
| CN109905824B (en) * | 2018-11-30 | 2022-01-11 | 美律电子(深圳)有限公司 | Loudspeaker structure |
| CN111644362A (en) * | 2020-06-12 | 2020-09-11 | 西安交通大学 | Embedded arched thin film driven PMUT unit and preparation method thereof |
| CN113245175A (en) * | 2021-06-21 | 2021-08-13 | 苏州晶方半导体科技股份有限公司 | Piezoelectric micromechanical ultrasonic transducer and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102172575A (en) | Piezoelectric micro machining energy transducer | |
| CN105375818B (en) | Hyperbolic arm type piezoelectricity-Electromagnetic heating power generator | |
| CN106876576B (en) | A kind of piezo-electricity composite material and preparation method thereof based on scissoring vibration | |
| CN103199736A (en) | Composite structure piezoelectric energy collector driven by cantilever | |
| CN102570368B (en) | Traveling wave type piezoelectric material vibration anti-icing/deicing device based on in-plane or out-of-plane mode and deicing method | |
| CN110508474B (en) | Hybrid drive MUT unit structure and parametric excitation method thereof | |
| US20110234048A1 (en) | Apparatus for generating electricity | |
| CN106198724A (en) | A kind of novel multistable ultrasound detection sensor | |
| CN103872946B (en) | Linear multiple degrees of freedom low-frequency vibration energy collecting device vibration pick-up structure | |
| CN201063346Y (en) | Sensing vibration diaphragm for dual polarization partitioning electrode | |
| CN103000801A (en) | Energy converter and energy conversion module | |
| CN102983781B (en) | Piezoelectric vibratory energy harvester | |
| CN101272109A (en) | Broad-band piezoelectricity oscillating generating set | |
| CN101718235A (en) | Synthetic jet actuator with double films, single chamber and single spout | |
| CN109365253A (en) | A kind of PMNT PZT (piezoelectric transducer) for ultrasonic deicing | |
| CN104393164A (en) | 1-1-3 piezoelectric composite material and manufacturing method thereof | |
| CN202023723U (en) | Piezoelectric ceramic type fuel pump | |
| CN205620362U (en) | A piezoelectric transducer for encouraging and receive non - disperse supersound guided wave | |
| Liu et al. | AlN Checker-mode Resonators with Routing Structures | |
| CN209476645U (en) | A kind of light-duty sandwich transducer based on PMNT piezoelectric material | |
| CN109984771A (en) | A kind of ultrasound transducer probe and ultrasonic imaging device | |
| CN110350079A (en) | A kind of piezoelectric element and preparation method thereof and ultrasonic sensor | |
| CN206077677U (en) | A kind of miniature piezoelectric ultrasonic transducer | |
| CN206077678U (en) | A kind of miniature piezoelectric ultrasonic transducer | |
| CN211240077U (en) | Piezoelectric feedback module and device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110907 |