CN102169925B - Method for manufacturing buffer layer of amorphous silicon thin-film solar cell - Google Patents
Method for manufacturing buffer layer of amorphous silicon thin-film solar cell Download PDFInfo
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- CN102169925B CN102169925B CN201110067243A CN201110067243A CN102169925B CN 102169925 B CN102169925 B CN 102169925B CN 201110067243 A CN201110067243 A CN 201110067243A CN 201110067243 A CN201110067243 A CN 201110067243A CN 102169925 B CN102169925 B CN 102169925B
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- China
- Prior art keywords
- layer
- deposition
- resilient coating
- flow
- amorphous silicon
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 10
- 239000010409 thin film Substances 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000011521 glass Substances 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 26
- 230000008021 deposition Effects 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 21
- 238000002360 preparation method Methods 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 23
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 9
- 230000007704 transition Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 229910052796 boron Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a method for manufacturing a buffer layer of an amorphous silicon thin-film solar cell, relating to the technical field of semiconductors. The method is characterized in that: in the process of depositing a p-i-n layer on a TCO glass (i.e., transparent conductive oxide coated glass), a rectangular wave-shaped buffer layer is formed between a p layer and an i layer through changing the flow-rate ratio of deposited gas; and at the same time of increasing the open-circuit voltage, better transition between the p layer and the i layer is realized, the cell efficiency is prevented from being lowered caused by the reason that boron atoms in the p are dispersed into the i layer.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to a kind of preparation method of amorphous silicon thin-film solar cell resilient coating.
Background technology
Single chamber PECVD (plasma reinforced chemical vapour deposition method) deposition technique is compared with multi-cavity chamber PECVD deposition technique; Equipment cost can reduce significantly; But also there is a defective in single chamber deposition technique, is exactly the transition problem between each rete, than being easier to exist cross pollution.
In deposition of amorphous silicon films solar cell p-i-n layer, the resilient coating that between p layer and i layer, adds one deck carbon containing is to realize that the transition between the double-layer films is a way popular in the amorphous silicon membrane battery process.Though but resilient coating in the past can improve the band gap of window, increase the open circuit voltage and the fill factor, curve factor of battery, can not stop the boron atom in the p layer in the i layer, to spread fully, thereby cause the conversion efficiency of battery to reduce.
Summary of the invention
Technical problem to be solved by this invention is: a kind of preparation method that can prevent to spread in the i layer owing to the boron atom in the p layer amorphous silicon thin-film solar cell resilient coating that causes battery efficiency decline is provided.
Technical solution of the present invention is: it is in the process of TCO deposition on glass p-i-n layer, through changing the flow-rate ratio of deposition gases, between p layer and i layer, forms the resilient coating of one deck square wave shape, may further comprise the steps:
A, deposition p layer, at pressure 10 ~ 50 Pa, in the vacuum chamber that temperature is 200 ~ 220 ℃, radio freqnency generator frequency 13.56 ~ 40.68MHz, power 250 ~ 300W feeds SiH4, H by flow-rate ratio 2:5:4:4 ~ 6
2, CH
4, TMB gas, 25 ~ 34 liters/minute of flow velocitys, 50 ~ 70 seconds feeding time;
B, formation square wave shape resilient coating, alternately feeding flow-rate ratio by the cycle is 4:40:1 ~ 3 and 4:40:
1/
3~
1/
2SiH
4, H
2, CH
4Gas, 30 ~ 45 liters/minute of flow velocitys, to buffer layer thickness be 4 ~ 6nm;
C, deposition i layer and n layer.
Technique effect of the present invention is: this method goes up in the process of deposition p-i-n layer at TCO glass (being the transparent conductive oxide coated glass); Through changing the flow-rate ratio of deposition gases; Between p layer and i layer, form the resilient coating of one deck square wave shape; When improving open circuit voltage, realized better transitional between p layer and the i layer, prevented that boron atom in the p layer from spread and cause battery efficiency decline in the i layer.
Embodiment
This method is in the process of TCO deposition on glass p-i-n layer; Through changing the flow-rate ratio of deposition gases; Between p layer and i layer, form the resilient coating of one deck square wave shape; When improving open circuit voltage, realized better transitional between p layer and the i layer, prevented that the boron atom in the p layer from spreading in the i layer.May further comprise the steps:
A, deposition p layer, at pressure 10 ~ 50 Pa, in the vacuum chamber that temperature is 200 ~ 220 ℃, radio freqnency generator frequency 13.56 ~ 40.68MHz, power 250 ~ 300W feeds SiH4, H by flow-rate ratio 2:5:4:4 ~ 6
2, CH
4, TMB (trimethyl borine) gas, 25 ~ 34 liters/minute of flow velocitys, 50 ~ 70 seconds feeding time;
B, formation square wave shape resilient coating after the P layer has deposited, are closed TMB gas intake valve, and alternately feeding flow-rate ratio by the cycle is 4:40:1 ~ 3 and 4:40:
1/
3~
1/
2SiH
4, H
2, CH
4Gas, 30 ~ 45 liters/minute of flow velocitys, to buffer layer thickness be 4 ~ 6nm; About 60 seconds of time, the last resilient coating that between p layer and i layer, forms one deck square wave shape is when improving open circuit voltage; Realized better transitional between p layer and the i layer, prevented that the boron atom in the p layer from spreading in the i layer;
C, close CH
4Gas trap continues deposition i layer and n layer.
10 seconds feeding cycles of said step b.
The buffer layer thickness of said step b deposition is 4nm.
Between p layer and i layer, form the resilient coating of one deck square wave shape, compare with resilient coating in the past, p course i layer transition effect is better, has more effectively avoided spreading in the i layer owing to the boron atom in the p layer decline of the battery efficiency that causes.
The buffer layer thickness of deposition is 4 ~ 6nm; In this thickness, the open circuit voltage and the fill factor, curve factor of battery rise along with the adding of resilient coating, but when thickness delimits above one; Open circuit voltage can become downward trend with fill factor, curve factor, and the thickness of 4nm is more suitable.
Embodiment 1:
In the vacuum tightness chamber, chamber pressure is controlled at 30 Pa, reaction temperature is heated to 220 ℃, and the frequency of radio freqnency generator is 40.68MHz, and power is 250W.Feed SiH4, H
2, CH
4, TMB gas, flow velocity is 34 liters/minute, the ratio of four kinds of gases is followed successively by 2:5:4:6, the gas feeding time is 70 seconds, at TCO glass surface deposition p layer.
After the P layer has deposited, close TMB gas intake valve, continue to feed SiH
4, H
2, CH
4Gas, flow velocity are 45 liters/minute, wherein SiH
4, H
2, CH
4Ratio be 4:40:1, after 10 seconds the adjustment flow-rate ratio be 4:40:
1/
3, once more ratio is adjusted back 4:40:1 after 10 seconds, by that analogy, alternately change SiH
4And CH
4Flow-rate ratio, feeding the gas time is 60 seconds, the last resilient coating that between p layer and i layer, forms one deck square wave shape when improving open circuit voltage, has been realized better transitional between p layer and the i layer, has prevented that the boron atom in the p layer from spreading in the i layer.
When buffer layer deposition arrives certain thickness, close CH
4Gas trap, deposition i layer and n layer.
Embodiment 2
In the PECVD reaction chamber, in the vacuum tightness chamber, chamber pressure is controlled at 20 Pa, reaction temperature is heated to 220 ℃, and the frequency of radio freqnency generator is 40.68MHz, and power is 300W.Feed SiH4, H
2, CH
4, TMB gas, flow velocity is 30 liters/minute, the ratio of four kinds of gases is followed successively by 2:5:4:6, the gas feeding time is 70 seconds, at TCO glass surface deposition p layer.
After the P layer has deposited, close TMB gas intake valve, continue to feed SiH
4, H
2, CH
4Gas, flow velocity are 50 liters/minute, wherein SiH
4, H
2, CH
4Ratio be 4:40:3, after 10 seconds the adjustment flow-rate ratio be 4:40:
1/
2, once more ratio is adjusted back 4:40:3 after 10 seconds, by that analogy, alternately change SiH
4And CH
4Flow-rate ratio, feeding the gas time is 60 seconds, the last resilient coating that between p layer and i layer, forms one deck square wave shape when improving open circuit voltage, has been realized better transitional between p layer and the i layer, has prevented that the boron atom in the p layer from spreading in the i layer.
When buffer layer deposition arrives certain thickness, close CH
4Gas trap, deposition i layer and n layer.
Claims (3)
1. the preparation method of an amorphous silicon thin-film solar cell resilient coating; It is characterized in that, in the process of TCO deposition on glass p-i-n layer, through changing the flow-rate ratio of deposition gases; Between p layer and i layer, form the resilient coating of one deck square wave shape, may further comprise the steps:
A, deposition p layer, at pressure 10 ~ 50 Pa, in the vacuum chamber that temperature is 200 ~ 220 ℃, radio freqnency generator frequency 13.56 ~ 40.68MHz, power 250 ~ 300W feeds SiH4, H by flow-rate ratio 2:5:4:4 ~ 6
2, CH
4, TMB gas, 25 ~ 34 liters/minute of flow velocitys, 50 ~ 70 seconds feeding time;
B, formation square wave shape resilient coating, alternately feeding flow-rate ratio by the cycle is 4:40:1 ~ 3 and 4:40:
1/
3~
1/
2SiH
4, H
2, CH
4Gas, 30 ~ 45 liters/minute of flow velocitys, to buffer layer thickness be 4 ~ 6nm;
C, deposition i layer and n layer.
2. the preparation method of amorphous silicon thin-film solar cell resilient coating as claimed in claim 1 is characterized in that, the feeding cycle of said step b is 10 seconds.
3. the preparation method of amorphous silicon thin-film solar cell resilient coating as claimed in claim 1 is characterized in that, the buffer layer thickness of said step b deposition is 4nm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110067243A CN102169925B (en) | 2011-03-21 | 2011-03-21 | Method for manufacturing buffer layer of amorphous silicon thin-film solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110067243A CN102169925B (en) | 2011-03-21 | 2011-03-21 | Method for manufacturing buffer layer of amorphous silicon thin-film solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN102169925A CN102169925A (en) | 2011-08-31 |
| CN102169925B true CN102169925B (en) | 2012-10-10 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109509807B (en) * | 2018-12-04 | 2020-06-16 | 江苏爱康能源研究院有限公司 | Emitter structure of crystalline silicon heterojunction solar cell and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001152323A (en) * | 1999-11-29 | 2001-06-05 | Canon Inc | Method of manufacturing for transparent electrode and photovoltaic element |
| JP4215694B2 (en) * | 2004-08-23 | 2009-01-28 | シャープ株式会社 | Photoelectric conversion device and manufacturing method thereof |
| CN101562220A (en) * | 2009-05-22 | 2009-10-21 | 河南新能光伏有限公司 | Process for manufacturing amorphous silicon thin film solar cell |
-
2011
- 2011-03-21 CN CN201110067243A patent/CN102169925B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001152323A (en) * | 1999-11-29 | 2001-06-05 | Canon Inc | Method of manufacturing for transparent electrode and photovoltaic element |
| JP4215694B2 (en) * | 2004-08-23 | 2009-01-28 | シャープ株式会社 | Photoelectric conversion device and manufacturing method thereof |
| CN101562220A (en) * | 2009-05-22 | 2009-10-21 | 河南新能光伏有限公司 | Process for manufacturing amorphous silicon thin film solar cell |
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| CN102169925A (en) | 2011-08-31 |
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Address after: 157000 Heilongjiang Province, Mudanjiang City Road, Yangming District Yumin Lotus Road East Patentee after: Mudanjiang Xuyang Technology Co.,Ltd. Address before: Park on the Russian trade processing Yumin Road, Yangming District lotus road 157000 east of Heilongjiang city of Mudanjiang Province Patentee before: MUDANJIANG XUYANG SOLAR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20211110 Address after: 102200 201, floor 2, No. 2, yard 91, shashun Road, Changping District, Beijing Patentee after: Beijing Yuanda Xinda Technology Co.,Ltd. Address before: 157000 Yumin Road South Lianhua North Road East, Yangming District, Mudanjiang City, Heilongjiang Province Patentee before: Mudanjiang Xuyang Technology Co.,Ltd. |
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Granted publication date: 20121010 |