CN101562220A - Process for manufacturing amorphous silicon thin film solar cell - Google Patents
Process for manufacturing amorphous silicon thin film solar cell Download PDFInfo
- Publication number
- CN101562220A CN101562220A CNA2009100650916A CN200910065091A CN101562220A CN 101562220 A CN101562220 A CN 101562220A CN A2009100650916 A CNA2009100650916 A CN A2009100650916A CN 200910065091 A CN200910065091 A CN 200910065091A CN 101562220 A CN101562220 A CN 101562220A
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- Prior art keywords
- sih
- amorphous silicon
- silicon film
- film solar
- preparation
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Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000010409 thin film Substances 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 title abstract description 7
- 239000010408 film Substances 0.000 claims abstract description 32
- 238000002360 preparation method Methods 0.000 claims abstract description 26
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims description 45
- 230000008021 deposition Effects 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 11
- 238000005984 hydrogenation reaction Methods 0.000 claims description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 3
- 238000010790 dilution Methods 0.000 abstract description 2
- 239000012895 dilution Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000004936 stimulating effect Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a process for manufacturing an amorphous silicon thin film solar cell, which belongs to the field of semiconductors. The process comprises the following steps: (a) preparing a p-type silicon-carbon film; (b) preparing a buffer layer; (c) preparing an intrinsic layer; and (d) preparing an n layer. In the preparation of each layer, the band gap width, the a P layer with high conductivity and an interface with low defect concentration are obtained by controlling the dilution ratio of H2 and other process parameters, thus the conversion efficiency of the cell is greatly improved, and the attenuating effect of the cell is reduced.
Description
One. technical field
The present invention relates to a kind of manufacturing process of solar cell, particularly a kind of manufacturing process of amorphous silicon film solar battery belongs to semiconductor applications.
Two. background technology
The demand of world energy sources makes the solar cell technology obtain swift and violent development, the technology of the ripe main flow of existing market is based on monocrystalline silicon and polycrystalline silicon solar cell, but because the environmental problem that exists in the cost limit that the shortage of silicon materials causes and the production crystalline silicon process, advantage such as amorphous silicon film solar battery has that consumptive material is few, environmental friendliness, cost decline space are bigger, research and production unit one after another with amorphous silicon solar cell as research and development principal direction
The structure of amorphous silicon solar cell is based on the p-i-n type, and the subject matter of amorphous silicon solar cell existence at present is how to improve transformation efficiency and reduce photic attenuating effect.Amorphous p layer has very big decisive role as Window layer, doped layer to overcoming the above problems.P section bar material as Window layer needs to approach as much as possible (about 20nm) to improve its transmitance, needs high conductivity again to reduce the series resistance of battery as doped layer.Amorphous silicon film solar battery adopts p type non-crystal silicon carbon (p-a-SiC:H) as Window layer mostly, and its conductivity is lower (about 10
-5The S/cm magnitude); There is lattice mismatch issue in the p/i heterojunction boundary, causes that the boundary defect attitude increases, and has increased the compound of charge carrier.In addition, photic decline (S-W) effect of amorphous silicon material makes the performance of amorphous solar cell instability, has reduced the photoelectric conversion efficiency of amorphous silicon membrane battery.
Three. summary of the invention
The present invention is for providing a kind of thin film solar cell manufacturing process with higher transformation efficiency and low photic attenuating effect.
The thin film solar cell manufacturing process of the present invention for providing adopts the electric capacity flat-plate type plasma reinforced chemical vapor deposition, is the substrate deposition amorphous silicon membrane with the transparent conducting glass, comprises step: (a) preparation p type silicon carbon film, and technological parameter is:
Feed B
2H
6, SiH
4, CH
4, H
2Gas, 160 ℃～240 ℃ of depositing temperatures, power density 0.15W/cm
2～0.5W/cm
2, hydrogen thinner ratio R (R=H
2/ SiH
4) being 100: 1-1.3, silane and methane flow are than 10: 1-1.6, deposition pressure are 80-120pa
(b) preparation resilient coating, technological parameter is:
Feed SiH
4, H
2Gas, wherein H
2/ SiH
4＞40,160 ℃～240 ℃ of depositing temperatures, power density 0.15W/cm
2～0.5W/cm
2, deposition pressure is 80-120pa.
(c) preparation hydrogenation non crystal silicon film technological parameter is:
Feed SiH
4, H
2Gas, wherein H
2/ SiH
4.＜20,160 ℃～240 ℃ of depositing temperatures, power density 0.15W/cm
2～0.5W/cm
2, deposition pressure is 100-150pa.
(d) preparation n type hydrogenation non crystal silicon film, technological parameter is:
Feed PH
3, SiH
4, H
2Gas, wherein H
2/ SiH
4.＞40,160 ℃～240 ℃ of depositing temperatures, power density 0.15W/cm
2～0.5W/cm
2, deposition pressure is 110-160pa.
(e) preparation aluminium back reflector, technological parameter is:
On silicon thin film, adopt physical vapour deposition (PVD) or sputtering method to prepare the aluminium back reflector.Step (b) can realize in same settling chamber with step (a); Step (b) and step (c) can realize that step (b) is continuous to aura between the step (c) at same chamber.Step (a) and (b) (c) power density (d) is 0.35W/cm
2, the depositing temperature of step (a) and (b) (c), (d) is 180 ℃～230 ℃, step (a) and (b) (c) (d) circulate and once form binode laminated cell structure.
Adopt this technology to make thin film solar cell, resilient coating preparation under the higher hydrogen dilution, with respect to amorphous silicon, bandwidth increases, and magnetic tape trailer narrows down, and structurally ordered property also obviously increases.Be applied to the resilient coating of battery, can improve the p/i interface of battery, reduce defect state, can improve the open circuit voltage and the photoelectric conversion efficiency of battery.The stability that the method for employing p type silicon carbon material and silicon thin film resilient coating prepares battery is good, conversion efficiency is higher, and photic attenuating effect is little.
Four. embodiment
Adopt multi-cavity chamber depositing system, dispose vacuum acquiring system, the power supply stimulating frequency adopts 13.56MHz, is substrate with the tin ash electro-conductive glass, must the process conditions deposit obtain amorphous silicon membrane.
Embodiment 1:
Preparation unijunction amorphous silicon film solar battery in the dull and stereotyped appearance formula plasma reinforced chemical vapor deposition system of multi-cavity chamber.Settling chamber's vacuum is evacuated to vacuum degree is higher than 1 * 10
-5Pa, depositing temperature are heated to 190 ℃, and radio-frequency power adopts 0.4W/cm
2P layer silicon carbon film is at the preparation of p chamber, hydrogen thinner ratio R=100: 1.1 (R=H
2/ SiH
4), silane and methane flow were than 10: 1, and the thickness that deposition pressure 100pa prepares film is about 20nm.After the silicon carbon layer of preparation boron-doping is finished, substrate is transferred to the I chamber, resilient coating and amorphous silicon hydride intrinsic layer prepare in same chamber, and buffer layer deposition adopts highly diluted to compare R
1=50 (R
1=H
2/ SiH
4) prepare the not silicon buffer layer of carbon dope, 190 ℃ of depositing temperatures, radio-frequency power adopts 0.35W/cm
2, deposition pressure 100pa, thickness 20nm under the situation that the plasma aura does not go out, regulates silane concentration, adopts low hydrogen thinner ratio R
2=16, (R
2=H
2/ SiH
4) preparation intrinsic i type hydrogenation non crystal silicon film, deposition pressure is 110pa, other technological parameter is constant, thickness is about 450nm.The n type hydrogenation non crystal silicon film of phosphorus is mixed in preparation in the n chamber, feeds PH
3, SiH
4, H
2Gas, wherein H
2/ SiH
4=50, depositing temperature 180, power density 0.35W/cm
2, deposition pressure is 140pa, thickness is 30nm.On the n layer, adopt the mode sputtering aluminum back electrode of magnetron sputtering again, obtain the unijunction amorphous silicon film solar battery.
Embodiment 2:
With the transparent conducting glass is substrate, earlier glass substrate is preheating to 180 ℃, sends into multi-cavity chamber dull and stereotyped appearance formula plasma reinforced chemical vapor deposition system, preparation unijunction amorphous silicon film solar battery.Settling chamber's vacuum is evacuated to vacuum degree is higher than 1 * 10
-5Pa, depositing temperature are heated to 190 ℃, and radio-frequency power adopts 0.4W/cm
2P layer nano-silicone wire/carbon is at the preparation of p chamber, hydrogen thinner ratio R=100: 1.1 (R=H
2/ SiH
4), silane and methane flow were than 10: 1, and the thickness that deposition pressure 100pa prepares film is about 20nm.After the silicon carbon layer of preparation boron-doping is finished, substrate is transferred to another chamber, resilient coating and amorphous silicon hydride intrinsic layer prepare in same chamber, and buffer layer deposition adopts highly diluted to compare R
1=50 (R
1=H
2/ SiH
4) prepare the not silicon buffer layer of carbon dope, 190 ℃ of depositing temperatures, radio-frequency power adopts 0.35W/cm
2, deposition pressure 100pa, thickness 20nm under the situation that the plasma aura does not go out, regulates silane concentration, adopts low hydrogen thinner ratio R
2=16, (R
2=H
2/ SiH
4) preparation intrinsic i type hydrogenation non crystal silicon film, deposition pressure is 110pa, other technological parameter is constant, thickness is about 280nm.The n type hydrogenation non crystal silicon film of phosphorus is mixed in preparation in the n chamber, feeds PH
3, SiH
4, H
2Gas, wherein [H
2]/[SiH
4.=50, depositing temperature 180, power density 0.35W/cm
2, deposition pressure is 140pa, thickness is 30nm, finishes a wherein knot noncrystal membrane solar cell.Above-mentioned battery is reentered the P settling chamber, settling chamber's vacuum is evacuated to vacuum degree is higher than 1 * 10
-5Pa, depositing temperature are heated to 190 ℃, and radio-frequency power adopts 0.4W/cm
2P layer nano-silicone wire/carbon is at the preparation of p chamber, hydrogen thinner ratio R=100: 1.1 (R=H
2/ SiH
4), silane and methane flow were than 10: 1, and the thickness that deposition pressure 100pa prepares film is about 20nm.After the silicon carbon layer of preparation boron-doping is finished, substrate is transferred to another chamber, resilient coating and amorphous silicon hydride intrinsic layer prepare in same chamber, and buffer layer deposition adopts highly diluted to compare R
1=50 (R
1=H
2/ SiH
4) prepare the not silicon buffer layer of carbon dope, power supply stimulating frequency 13.56MHz, 190 ℃ of depositing temperatures, radio-frequency power adopts 0.35W/cm
2, deposition pressure 100pa, thickness 20nm under the situation that the plasma aura does not go out, regulates silane concentration, adopts low hydrogen thinner ratio R
2=16, (R
2=H
2/ SiH
4) preparation intrinsic i type hydrogenation non crystal silicon film, deposition pressure is 110pa, other technological parameter is constant, thickness is about 480nm.The n type hydrogenation non crystal silicon film of phosphorus is mixed in preparation in the n chamber, feeds PH
3, SiH
4, H
2Gas, wherein H
2/ SiH
4=50, depositing temperature 180, power density 0.35W/cm
2, deposition pressure is 140pa, thickness is 30nm.On the n layer, adopt the mode sputtering aluminum back electrode of magnetron sputtering again, obtain binode lamination amorphous silicon film solar battery.
The amorphous silicon film solar battery that utilizes this technology to make, the unijunction conversion efficiency reaches more than 8%, and the conversion efficiency of binode lamination reaches more than 11%, and photo attenuation about 10% after tested, is far smaller than present 20% average level.
Claims (6)
1. the manufacturing process of an amorphous silicon film solar battery adopts the electric capacity flat-plate type plasma reinforced chemical vapor deposition, is the substrate deposition amorphous silicon membrane with the transparent conducting glass, may further comprise the steps:
(a) preparation p type silicon carbon film, technological parameter is:
Feed B
2H
6, SiH
4, CH
4, H
2Gas, 160 ℃～240 ℃ of depositing temperatures, power density 0.15W/cm
2～0.5W/cm
2, hydrogen thinner ratio R (R=H
2/ SiH
4) being 100: 1-1.3, silane and methane flow are than 10: 1-1.6, deposition pressure are 80-120pa
(b) preparation resilient coating, technological parameter is: "
Feed SiH
4, H
2Gas, wherein H
2/ SiH
4.＞40,160 ℃～240 ℃ of depositing temperatures, power density 0.15W/cm
2～0.5W/cm
2, deposition pressure is 80-120pa.
(c) preparation hydrogenation non crystal silicon film, technological parameter is:
Feed SiH
4, H
2Gas, wherein H
2/ SiH
4.＜20,160 ℃～240 ℃ of depositing temperatures, power density 0.15W/cm
2～0.5W/cm
2, deposition pressure is 100-150pa.
(d) preparation n type hydrogenation non crystal silicon film, technological parameter is:
Feed PH
3, SiH
4, H
2Gas, wherein H
2/ SiH
4.＞40,160 ℃～240 ℃ of depositing temperatures, power density 0.15W/cm
2～0.5W/cm
2, deposition pressure is 110-160pa.
(e) preparation aluminium back reflector
On silicon thin film, adopt physical vapour deposition (PVD) or sputtering method to prepare the aluminium back reflector.
2. the manufacturing process of amorphous silicon film solar battery according to claim 1 is characterized in that: step (b) can realize in same settling chamber with step (a).
3. the manufacturing process of amorphous silicon film solar battery according to claim 1 is characterized in that step (b) and step (c) can realize that step (b) is continuous to aura between the step (c) at same chamber.
4. the manufacturing process of amorphous silicon film solar battery according to claim 1, it is characterized in that: step (a) and (b) (c) power density (d) is 0.35W/cm
2
5. the manufacturing process of amorphous silicon film solar battery according to claim 1, it is characterized in that: step (a) and (b) (c) depositing temperature (d) is 180 ℃～230 ℃.
6. the manufacturing process of amorphous silicon film solar battery according to claim 1 is characterized in that: step (a) and (b) (c) (d) circulate and form binode laminated cell structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100650916A CN101562220B (en) | 2009-05-22 | 2009-05-22 | Process for manufacturing amorphous silicon thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100650916A CN101562220B (en) | 2009-05-22 | 2009-05-22 | Process for manufacturing amorphous silicon thin film solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101562220A true CN101562220A (en) | 2009-10-21 |
| CN101562220B CN101562220B (en) | 2010-10-06 |
Family
ID=41220927
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100650916A Expired - Fee Related CN101562220B (en) | 2009-05-22 | 2009-05-22 | Process for manufacturing amorphous silicon thin film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101562220B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101800268A (en) * | 2010-03-03 | 2010-08-11 | 中国科学院半导体研究所 | Method for modifying performance of amorphous solar cell |
| CN101807613A (en) * | 2010-03-29 | 2010-08-18 | 哈尔滨工业大学 | Amorphous silicon solar cell with three-dimensional photonic crystal serving as back reflecting layer and manufacturing method thereof |
| CN102097541A (en) * | 2010-11-02 | 2011-06-15 | 南开大学 | Method for enhancing efficiency of industrial single-chamber deposited amorphous silicon-based solar cell |
| CN102169925A (en) * | 2011-03-21 | 2011-08-31 | 牡丹江旭阳太阳能科技有限公司 | Method for manufacturing buffer layer of amorphous silicon thin-film solar cell |
| CN102185038A (en) * | 2011-04-21 | 2011-09-14 | 杭州天裕光能科技有限公司 | Method for improving weak light response of amorphous silicon film battery |
| CN102280527A (en) * | 2011-08-03 | 2011-12-14 | 牡丹江旭阳太阳能科技有限公司 | Method for manufacturing thin film solar cell by virtue of high-speed deposition |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148294A (en) * | 2011-03-21 | 2011-08-10 | 牡丹江旭阳太阳能科技有限公司 | Method for preparing amorphous silicon thin-film solar cell with n layer and protection window layers |
-
2009
- 2009-05-22 CN CN2009100650916A patent/CN101562220B/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101800268A (en) * | 2010-03-03 | 2010-08-11 | 中国科学院半导体研究所 | Method for modifying performance of amorphous solar cell |
| CN101800268B (en) * | 2010-03-03 | 2012-05-23 | 中国科学院半导体研究所 | A method for improving the performance of amorphous silicon solar cells |
| CN101807613A (en) * | 2010-03-29 | 2010-08-18 | 哈尔滨工业大学 | Amorphous silicon solar cell with three-dimensional photonic crystal serving as back reflecting layer and manufacturing method thereof |
| CN101807613B (en) * | 2010-03-29 | 2011-05-25 | 哈尔滨工业大学 | Amorphous silicon solar cell with three-dimensional photonic crystal as back reflection layer and preparation method thereof |
| CN102097541A (en) * | 2010-11-02 | 2011-06-15 | 南开大学 | Method for enhancing efficiency of industrial single-chamber deposited amorphous silicon-based solar cell |
| CN102097541B (en) * | 2010-11-02 | 2012-12-12 | 南开大学 | Method for enhancing efficiency of industrial single-chamber deposited amorphous silicon-based solar cell |
| CN102169925A (en) * | 2011-03-21 | 2011-08-31 | 牡丹江旭阳太阳能科技有限公司 | Method for manufacturing buffer layer of amorphous silicon thin-film solar cell |
| CN102169925B (en) * | 2011-03-21 | 2012-10-10 | 牡丹江旭阳太阳能科技有限公司 | Method for manufacturing buffer layer of amorphous silicon thin-film solar cell |
| CN102185038A (en) * | 2011-04-21 | 2011-09-14 | 杭州天裕光能科技有限公司 | Method for improving weak light response of amorphous silicon film battery |
| CN102280527A (en) * | 2011-08-03 | 2011-12-14 | 牡丹江旭阳太阳能科技有限公司 | Method for manufacturing thin film solar cell by virtue of high-speed deposition |
| CN102280527B (en) * | 2011-08-03 | 2013-09-11 | 牡丹江旭阳太阳能科技有限公司 | Method for manufacturing thin film solar cell by virtue of high-speed deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101562220B (en) | 2010-10-06 |
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Inventor after: Wang Hui Inventor after: Zhao Chunqing Inventor after: Zhao Wenjun Inventor after: Qin Xiaohai Inventor after: Sun Fuhe Inventor after: Ren Yongping Inventor after: Wang Enzhong Inventor after: Zhang Wenqing Inventor after: Hu Juntian Inventor before: Sun Fuhe Inventor before: Ren Yongping Inventor before: Wang Enzhong Inventor before: Wang Hui Inventor before: Hu Juntian Inventor before: Zhang Wenqing Inventor before: Qin Xiaohai |
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