CN102169844A - 制造半导体器件的方法、颗粒和半导体器件 - Google Patents

制造半导体器件的方法、颗粒和半导体器件 Download PDF

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CN102169844A
CN102169844A CN2011100403121A CN201110040312A CN102169844A CN 102169844 A CN102169844 A CN 102169844A CN 2011100403121 A CN2011100403121 A CN 2011100403121A CN 201110040312 A CN201110040312 A CN 201110040312A CN 102169844 A CN102169844 A CN 102169844A
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conductive particle
electrode pad
resin
particle
semiconductor device
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CN102169844B (zh
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别宫史浩
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

Abstract

本发明提供了一种制造半导体器件的方法、颗粒和半导体器件。所述方法包括：在绝缘层的表面层中形成电极焊盘；在所述电极焊盘的上方设置导电颗粒，所述导电颗粒的至少一部分表面被热塑性树脂覆盖；以及通过加热所述树脂以使所述树脂软化，然后在所述导电颗粒和所述电极焊盘彼此电连接之后冷却和固化所述树脂，从而使用所述树脂将所述导电颗粒固定到所述电极焊盘的上方，以将所述导电颗粒形成为外部连接端子。

Description

制造半导体器件的方法、颗粒和半导体器件
相关申请的交叉引用
本申请基于日本专利申请No.2010-031461，通过引用，将其内容合并于此。
技术领域
本发明涉及用于制造具有外部连接端子的半导体器件的方法、颗粒和半导体器件。
背景技术
诸如凸块的用于连接到外部的外部连接端子被设置于半导体器件。例如，凸块通常全部由诸如金的金属形成，或者通常形成为所谓的树脂芯凸块，其中，该树脂芯凸块的主形状由树脂形成并且在该树脂的表面上形成导电膜。当形成这些凸块时，需要诸如光刻工艺的多个工艺。
另外，日本特许专利公开No.2007-005587公布了在电极焊盘上设置诸如树脂颗粒的弹性颗粒，以通过形成导电构件来覆盖该弹性颗粒从而形成凸块。在这种方法中，也需要诸如光刻工艺的多个工艺。
如以上所提及的，需要诸如光刻工艺的多个工艺来形成外部连接端子。出于这个原因，形成外部连接端子所需的时间较长，并且制造成本高。
发明内容
在一个实施例中，提供了一种用于制造半导体器件的方法，所述方法包括：在绝缘层的表面层上形成电极焊盘；在所述电极焊盘的上方设置导电颗粒，所述导电颗粒的至少一部分表面被热塑性树脂覆盖；以及通过加热所述树脂以使所述树脂软化，然后在所述导电颗粒和所述电极焊盘彼此电连接之后冷却和固化所述树脂，从而使用所述树脂将所述导电颗粒固定到所述电极焊盘的上方，以将所述导电颗粒形成为外部连接端子。
根据用于制造半导体器件的该方法，其表面被热塑性树脂覆盖的导电颗粒设置在电极焊盘上，并且该树脂被加热并软化，然后在导电颗粒和电极焊盘彼此电连接之后被冷却并固化，由此允许形成外部连接端子。因此，由于形成外部连接端子所需的工艺数量减少，因此形成外部连接端子所需的时间缩短，并且制造成本降低。
在另一个实施例中，提供了一种用于形成半导体器件的外部连接端子的颗粒，所述颗粒包括：导电颗粒；以及用于覆盖所述导电颗粒的至少一部分表面的热塑性树脂。
在又一个实施例中，提供了一种半导体器件，所述半导体器件包括：电极焊盘；导电颗粒，所述导电颗粒设置在所述电极焊盘的上方；以及树脂，所述树脂设置于所述电极焊盘与所述导电颗粒彼此接触的部分中，以将所述导电颗粒固定到所述电极焊盘上。
根据本发明的这些实施例，形成半导体器件的外部连接端子所需的时间缩短，并且制造成本降低。
附图说明
结合附图，根据下面对某些优选实施例的描述，本发明的以上和其它目的、优点和特征将更清楚，在附图中：
图1A和图1B是示出根据第一实施例的用于制造半导体器件的方法的剖视图；
图2是示出根据第一实施例的用于制造半导体器件的方法的剖视图；
图3是示出将树脂覆盖到导电颗粒表面上的方法的示意图；
图4是示出根据第二实施例的用于制造半导体器件的方法的流程图；
图5是用于说明给电极焊盘充电的方法的示意图；
图6是用于说明给电极焊盘充电的方法的原理的示意图；
图7是示出根据第三实施例的用于制造半导体器件的方法的剖视图；
图8是示出根据第四实施例的用于制造半导体器件的方法的剖视图；
图9A和图9B是示出根据第五实施例的用于制造半导体器件的方法的剖视图；
图10A和图10B是示出根据第五实施例的用于制造半导体器件的方法的剖视图。
具体实施方式
现在，在本文中将参照示例性实施例描述本发明。本领域的技术人员将认识到，可以使用本发明的教导完成许多替代实施例，并且本发明不限于为了说明目的而示出的实施例。
下文中，将参照附图描述本发明的实施例。在所有附图中，用类似附图标记表示类似元件，并且将不再重复对其的描述。
图1A和1B和图2是示出根据第一实施例的用于制造半导体器件的方法的剖视图。用于制造半导体器件的该方法包括下列步骤。首先，在绝缘层110的表面层上形成电极焊盘120。接着，在电极焊盘120上设置导电颗粒210。用树脂220覆盖导电颗粒210。树脂220具有热塑性，并且具有如下特性：当被加热至玻璃化转变温度或者熔点时至少一部分表面软化并且当被冷却时其被硬化。接着，通过加热树脂220以软化树脂220、然后在导电颗粒210和电极焊盘120彼此电连接之后冷却并固化树脂220，来使用树脂220将导电颗粒210固定在电极焊盘120上，从而形成作为外部连接端子的导电颗粒210。下文中，将进行详细描述。
首先，如图1A中所示，在衬底100上形成绝缘层110。绝缘层110是绝缘中间层，其位于衬底100上形成的多层互连层的顶层上。接着，通过在绝缘层110上选择性地形成导电膜来形成电极焊盘120。例如，由Al合金形成电极焊盘120。接着，在绝缘层110上以及电极焊盘120上，形成保护性绝缘膜130，例如，氧化硅膜或氮化硅膜或由这些膜形成的多层膜，并且在保护性绝缘膜130中形成位于电极焊盘120上的开口。
接着，在从保护性绝缘膜130的开口暴露的电极焊盘120上设置导电颗粒210。在这种状态下，用树脂220覆盖导电颗粒210的至少一部分表面(或全部表面)。随后将描述形成导电颗粒210的方法和在导电颗粒210的表面上覆盖树脂220的方法。
导电颗粒210可以是诸如Au、Al、Cu或W的单一金属，可以是诸如TiW的复合金属(例如，合金)，并且可以是其的层压膜。另外，树脂220是热塑性树脂，其由例如，聚乙烯、聚丙烯、丙烯酸类树脂、聚苯乙烯、聚氯乙烯、聚乙酸乙烯酯、ABS树脂、AS树脂、聚酰胺、聚碳酸酯、聚缩醛、改性的聚苯醚、聚对苯二甲酸乙二醇酯、和芳香族聚醚酮组成的组中选择的至少一个形成。另外，导电颗粒210的直径例如，等于或大于1μm并且等于或小于50μm，并且在导电颗粒210被覆盖的状态下树脂220的厚度例如，等于或大于0.1μm并且等于或小于10μm。
接着，如图1B中所示，在电极焊盘120向上的情况下，通过在焙烧炉内进行加热、红外回流、或热空气回流等，树脂220被加热至比树脂220的玻璃化转变温度更高的温度。由此，树脂220被软化。经软化的树脂220在重力作用下积聚在电极焊盘120上。由于导电颗粒210的比重高于经软化的树脂220的比重，因此它沉到经软化的树脂220中，并且与电极焊盘120接触。
在这种状态下，将树脂220冷却至等于或低于玻璃化转变温度的温度。由此，树脂220固化，并且在与电极焊盘120接触的情况下，通过树脂220固定导电颗粒210。将树脂220设置于其中电极焊盘120与导电颗粒210彼此接触的部分中。以此方式，导电颗粒210被安装在电极焊盘120上，用作外部连接端子。
此后，如图2中所示，在安装衬底300上安装半导体器件。此时，半导体器件的导电颗粒210连接到安装衬底300的电极310。包括在半导体器件中的电路通过导电颗粒210连接到安装衬底300的电极310。例如，安装衬底300是玻璃衬底，但是其可以是诸如插入物的另一个衬底。
图3是示出将树脂220覆盖在导电颗粒210的至少一部分表面上的方法的示意图。在图3所示的工艺之前，首先，形成导电颗粒210。导电颗粒210大致是球形的，并且使用诸如雾化法、旋转电极法、和机械合金法的机械方法，或者还原金属氧化物或氯化物等化学方法来形成。例如，可以使用雾化法形成导电颗粒210，该雾化法即所谓的气体雾化法，在该方法中，在金属熔融之后，用惰性气体的喷射流喷洒漏斗底部的喷嘴流出的熔融金属，由此将熔融金属碾磨成粉并且将其形成为液滴，然后这些液滴被固化。该方法的特征在于使用了惰性气体，由此通过使用能够控制工艺系统内的氧气浓度的设备，可以使导电颗粒210在其表面上没有氧化物膜。
例如，如图3中所示，将以此方式形成的导电颗粒210连同树脂220一起放置在密封容器400中。在树脂220软化的情况下，通过摇动或振动容器400，在导电颗粒210的表面上覆盖树脂220。例如，当由诸如Al的高活性金属形成导电颗粒210时，可以使用诸如，乙烯-乙烯醇共聚物的具有抗透氧性的树脂来作为树脂220。如以上所提及的，当在排空氧气的环境中分别执行形成导电颗粒210的步骤和将树脂220覆盖到导电颗粒210上的步骤时，抑制了导电颗粒210的表面氧化，由此允许导电颗粒210造成的电阻分量降低。
接下来，将描述本实施例的操作和效果。根据本实施例，在电极焊盘120上设置其表面被覆盖有热塑性树脂220的导电颗粒210，并且将树脂220加热并软化，然后在导电颗粒210和电极焊盘120彼此电连接之后将其冷却和固化，由此允许由导电颗粒210形成外部连接端子。因而，由于形成外部连接端子所需的工艺数量减少，因此形成外部连接端子所需的时间缩短，并且制造成本降低。此外，在该方法中，由于在形成外部连接端子时不需要使用光刻工艺，因此形成外部连接端子所需的时间尤其被缩短，并且制造成本降低。
图4是示出根据第二实施例的用于制造半导体器件的方法的流程图。本实施例与第一实施例相同，不同之处在于，当在电极焊盘120上设置导电颗粒210时使用了充电。
具体来讲，首先，使用诸如(例如)电离装置的设备，将覆盖有树脂220的导电颗粒210的表面充电至第一极性，例如负极性(步骤S10)。当向电极焊盘120施加极性与导电颗粒210的极性相反的电压(例如正极性)时，带电的导电颗粒210分散在绝缘层130上。此时，在电极焊盘120与位于电极焊盘120上的导电颗粒210之间发生电吸引作用。然后，没有位于电极焊盘120上的导电颗粒210被去除。由此，导电颗粒210设置在电极焊盘120上(步骤S20)。此后，通过使用热处理来软化树脂220，从而将导电颗粒210固定在电极焊盘120上(步骤S30)。步骤S30和随后的步骤与第一实施例相同。
图5是用于说明给电极焊盘120充电的方法的示意图，并且图6是用于说明其原理的示意图。如图6中所示，在半导体器件的衬底100中形成二极管140，该二极管140用作用于防止静电击穿的保护性器件。二极管140连接半导体器件的衬底100和电极焊盘120，使得从衬底100朝向电极焊盘120的方向变成正向方向。构造二极管140，使得即使当电极焊盘120连接到电源线和输入/输出线中的任一个时，其也通过二极管140连接到衬底100。
出于这个原因，当平台(stage)500的表面或整个平台都导电时，则半导体器件的衬底100的相反侧变成与平台500接触，如图5中所示，并且在衬底100被真空吸引至平台500的状态下，使用电源520将正电势施加到平台500的表面，可以将具有正极性的电压通过衬底100和二极管140施加到电极焊盘120。
在这种状态下，当被充电成负极性的导电颗粒210分散在衬底100的表面上时，它们在静电力的作用下彼此吸引，并且导电颗粒210被吸附到电极焊盘120上。此时，由于各导电颗粒210彼此排斥，并由此没有彼此吸附，因此一个电极焊盘120上吸引一个导电颗粒210。
由于导电颗粒210的表面被树脂220覆盖，因此通过静电感应执行充电的步骤。出于这个原因，使充电保持更长，并且使树脂220的厚度比由被静电极化的非导电物质产生的颗粒的厚度更小，由此允许其电荷量增加。因此，可以增强对电极焊盘120的吸引力，以及对抗另一个导电颗粒210的排斥力，并且可以更可靠地在一个电极焊盘120上设置一个导电颗粒210。
此后，当施加诸如平台500的振动或倾斜的外力和由气流造成的风力时，不在电极焊盘120上的额外的那些导电颗粒210被从衬底100的表面滚落。
如上所述，根据本实施例，得到与第一实施例的效果相同的效果。另外，由于导电颗粒210在电吸引的作用下设置到电极焊盘120上，因此可以不需要将导电颗粒210设置在电极焊盘120的步骤，从而实现节省劳力的效果。
图7是示出根据第三实施例的用于制造半导体器件的方法的剖视图。用于制造半导体器件的该方法与第一实施例或第二实施例的方法具有相同的构造，不同之处在于以下方面。
首先，当将导电颗粒210连接到电极310以将半导体器件安装到安装衬底300上时，在等于或高于树脂220的玻璃化转变温度的温度下，对半导体器件与安装衬底300的结合部分，即包括树脂220的区域进行加热，并且使树脂220软化。使用安装衬底300将导电颗粒210压向电极焊盘120。在这种状态下，将树脂220冷却至比所述玻璃化转变温度更低的温度。由此，导电颗粒210在插入到电极焊盘120与电极310的每个之间的状况下发生变形，并且与导电颗粒210的接触面积增大。
出于这个原因，根据本实施例，除了得到与第一实施例的效果相同的效果之外，还可以可靠地将导电颗粒210连接到电极焊盘120和电极310的每个。
图8是示出根据第四实施例的用于制造半导体器件的方法的剖视图。用于制造半导体器件的该方法与第一实施例或第二实施例的方法具有相同的构造，不同之处在于以下方面。
首先，在电极焊盘120上设置导电颗粒210。当树脂220软化并且导电颗粒210固定到电极焊盘120上时，在树脂220软化的同时，使用施压夹具将导电颗粒210压向电极焊盘120。在这种状态下，树脂220冷却至比玻璃化转变温度更低的温度。由此，导电颗粒210被固定到电极焊盘120上。随后的步骤与第一实施例或第二实施例的步骤相同。
根据本实施例，得到了与第一实施例或第二实施例的效果相同的效果。另外，由于导电颗粒210发生变形，导致与电极焊盘120的接触面积增大，从而允许导电颗粒210可靠地连接到电极焊盘120。对于在将导电颗粒210于电极310结合时，半导体器件与安装衬底300的结合部分不能被加热至等于或高于树脂220的玻璃化转变温度的温度的情况而言，本实施例是尤其有效的。
图9A和9B、以及图10A和10B是示出根据第五实施例的用于制造半导体器件的剖视图。本实施例与第一实施例至第四实施例中的任一个都相同，不同之处在于，其包括在形成电极焊盘120之前，在绝缘层110中形成(当从平面图查看时)与电极焊盘120重叠的凹进部分112的步骤。下文中，将进行详细描述。
首先，如图9A中所示，形成绝缘层110。接着，在绝缘层110上形成抗蚀剂图案150，并且使用该抗蚀剂图案150对绝缘层110进行各向同性的蚀刻，例如进行湿法蚀刻。由此，在绝缘层110中形成凹进部分112。当从平面图中查看时，凹进部分112位于与电极焊盘120重叠的区域中。
同时，当形成连接孔以在绝缘层110中掩埋导通孔时，图9A所示的步骤可以在形成该连接孔的步骤之前执行，并且可以在形成该连接孔的步骤之后执行。
接着，如图9B中所示，使用(例如)溅射法在绝缘层110上形成导电膜，并且选择性去除该导电膜。由此，在绝缘层110上形成电极焊盘120。如以上所提及的，在绝缘层110中与电极焊盘120重叠的区域中形成凹进部分112。出于这个原因，凹进部分也形成在电极焊盘120的表面中。接着，在绝缘层110上以及电极焊盘120上形成保护性绝缘膜130，并且在保护性绝缘膜130中形成位于电极焊盘120上的开口。
接着，如图10A中所示，将覆盖有树脂220的导电颗粒210设置在电极焊盘120上。如以上所提及的，在电极焊盘120的表面中形成了凹进部分。出于这个原因，很容易将导电颗粒210设置在电极焊盘120上。
此后，如图10B中所示，在等于或高于树脂220的玻璃化转变温度的温度下加热树脂220，然后使之冷却。由此，使用树脂220将导电颗粒210固定到电极焊盘120上。
任何其它步骤与第一实施例至第四实施例中的任一个相同。
通过本实施例也可以得到与第一实施例的效果相同的效果。另外，由于在电极焊盘120的表面中形成了凹进部分，因此在将导电颗粒210设置在电极焊盘120的步骤中很容易将导电颗粒210设置在电极焊盘120上。另外，由于导电颗粒210与电极焊盘120的接触面积增大，因此可以可靠地确保这两者之间的电连接。
如上所述，虽然已经参照附图阐述了本发明的一些实施例，但是它们只是本发明的示例，并且可以采用与上述构造不同的各种构造。
显而易见，本发明不限于以上实施例，并且可以在不脱离本发明的范围和精神的情况下进行修改和变化。

Claims (11)

1.一种用于制造半导体器件的方法，所述方法包括：
在绝缘层的表面层上形成电极焊盘；
在所述电极焊盘的上方设置导电颗粒，所述导电颗粒的至少一部分表面被热塑性树脂覆盖；以及
通过加热所述树脂以使所述树脂软化、然后在所述导电颗粒和所述电极焊盘彼此电连接之后冷却和固化所述树脂，来使用所述树脂将所述导电颗粒固定到所述电极焊盘的上方，以将所述导电颗粒形成为外部连接端子。
2.根据权利要求1所述的用于制造半导体器件的方法，
其中，所述树脂由从聚乙烯、聚丙烯、丙烯酸类树脂、聚苯乙烯、聚氯乙烯、聚乙酸乙烯酯、ABS树脂、AS树脂、聚酰胺、聚碳酸酯、聚缩醛、改性的聚苯醚、聚对苯二甲酸乙二醇酯、和芳香族聚醚酮组成的组中选择的至少一个形成。
3.根据权利要求1所述的用于制造半导体器件的方法，
其中，所述导电颗粒的直径等于或大于1μm并且等于或小于50μm。
4.根据权利要求1所述的用于制造半导体器件的方法，
在所述电极焊盘的上方设置所述导电颗粒的所述步骤包括：
给所述导电颗粒充电；以及
在所述绝缘层的上方设置带电的所述导电颗粒，同时向所述电极焊盘施加极性与所述导电颗粒的极性相反的电压，并且通过在所述导电颗粒与所述电极焊盘之间产生电吸引作用，将所述导电颗粒设置在所述电极焊盘的上方。
5.根据权利要求4所述的用于制造半导体器件的方法，
其中，所述电极焊盘通过用于防止静电击穿的保护性器件而连接到所述半导体器件的衬底，以及
在所述电极焊盘的上方设置所述导电颗粒的所述步骤中，将所述半导体器件放置在至少其表面导电的平台上，并且通过向所述平台的所述表面施加具有相反极性的所述电压，通过所述半导体器件的所述衬底和用于防止静电击穿的所述保护性器件，向所述电极焊盘施加具有所述相反极性的所述电压。
6.根据权利要求1所述的用于制造半导体器件的方法，还包括：
在所述电极焊盘的上方设置所述导电颗粒的所述步骤之后，在所述树脂被加热和软化的状态下，将所述导电颗粒压向所述电极焊盘。
7.根据权利要求1所述的用于制造半导体器件的方法，还包括：
在形成所述电极焊盘的所述步骤之前，在所述绝缘层中形成从平面图看时与所述电极焊盘重叠的凹进部分。
8.一种用于形成半导体器件的外部连接端子的颗粒，所述颗粒包括：
导电颗粒；以及
用于覆盖所述导电颗粒的至少一部分表面的热塑性树脂。
9.根据权利要求8所述的颗粒，
其中，所述导电颗粒的直径等于或大于1μm并且等于或小于50μm。
10.根据权利要求8所述的颗粒，
其中，所述树脂由从聚乙烯、聚丙烯、丙烯酸类树脂、聚苯乙烯、聚氯乙烯、聚乙酸乙烯酯、ABS树脂、AS树脂、聚酰胺、聚碳酸酯、聚缩醛、改性的聚苯醚、聚对苯二甲酸乙二醇酯、和芳香族聚醚酮组成的组中选择的至少一个形成。
11.一种半导体器件，所述半导体器件包括：
电极焊盘；
导电颗粒，所述导电颗粒设置在所述电极焊盘的上方；以及
树脂，所述树脂被提供到所述电极焊盘与所述导电颗粒彼此接触的部分中，以将所述导电颗粒固定到所述电极焊盘。
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