CN102169126B - Hot air speed and air direction sensor based on thinning process and manufacturing method thereof - Google Patents
Hot air speed and air direction sensor based on thinning process and manufacturing method thereof Download PDFInfo
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- CN102169126B CN102169126B CN 201110008120 CN201110008120A CN102169126B CN 102169126 B CN102169126 B CN 102169126B CN 201110008120 CN201110008120 CN 201110008120 CN 201110008120 A CN201110008120 A CN 201110008120A CN 102169126 B CN102169126 B CN 102169126B
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Abstract
The invention provides a wafer level packaged hot air speed and air direction sensor realized by adopting a silicon substrate thinning process technology and a manufacturing method thereof. In a sensor chip, a heating element and a heat-sensitive temperature measuring element are manufactured by adopting a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process; a heat insulation groove with the depth of 50 microns is formed between the heating element and the heat-sensitive temperature measuring element by adopting a dry etching process, so that transverse heat conduction effects between the heating element and the heat-sensitive temperature measuring element are reduced; a silicon substrate of a sensing chip is thinned by using a thinning process until the thickness of the silicon substrate is 80-100 microns, so that the heat conduction and the heat capacity of the substrate of the chip are lowered; and a ceramic substrate is attached to the back face of a thinned silicon chip to protect the silicon chip and sense the changes of the air speed and the air direction of the ambient temperature. By adopting the air speed and air direction sensor, wafer package is realized, the heat conduction loss of the silicon substrate and the heat capacity of the sensor chip are greatly lowered, and a large output signal and shorter response time can be obtained under low power consumption.
Description
Technical field
The present invention relates to a kind of hot type wind speed wind direction sensor that adopts the wafer level packaging of silicon substrate reduction process technology realization; Adopt the standard CMOS integrated circuit technology to prepare sensor chip, relate in particular to a kind of low-power consumption based on integrated anemograph of ceramic package and preparation method thereof.
Background technology
In the design of CMOS integrated anemograph, encapsulation is the technical bottleneck that hinders its development all the time.Its encapsulating material promptly requires to have good heat-conductive characteristic on the one hand; Require that again sensor is had protective effect; And also need consider the influence of encapsulating material to aspects such as transducer sensitivity, reliability and prices in the design, this has just limited the degree of freedom of sensor self package design.On the other hand, thermal flow rate sensor requires the responsive part of sensor to be exposed in the measurement environment, requires treatment circuit and environment to isolate simultaneously again, in order to avoid influence the performance of treatment circuit, both have produced contradiction to the requirement of encapsulation.
The silicon wind speed wind direction sensor of report mostly was directly exposed to the sensing surface of silicon chip in the physical environment in the past, so that can change by the extraneous wind speed of perception.So, silicon chip is easy to receive various pollutions, causes the instability of its performance, even damages.If adopt the higher ceramic substrate of thermal conductivity; The mode of utilizing flip chip bonding encapsulation or heat-conducting glue to attach encapsulates the sensor silicon; Just can avoid above-mentioned contradiction preferably; But the heat overwhelming majority that encapsulation back sensor produces dissipates from silicon-based substrate with heat conducting mode, only has a very little part to carry out heat interchange through pottery and outside air, reduces the amplitude of output sensitive signal greatly; Power consumption through increasing sensor can improve the amplitude of sensitive signal, but causes the bigger power consumption of whole sensor system.
Summary of the invention
The purpose of this invention is to provide a kind of adopt wafer level packaging that silicon substrate reduction process technology realizes based on hot type wind speed wind direction sensor of reduction process and preparation method thereof; Sensor designed structure and packing forms help when guaranteeing big sensitive signal amplitude, and sensing system has lower power consumption.
The present invention adopts following technical scheme:
A kind of hot type wind speed wind direction sensor based on reduction process; Comprise the attenuate silicon; The back side of said attenuate silicon is connected with ceramic substrate through heat-conducting glue, is provided with the N trap in the front of attenuate silicon, on the N trap, is provided with oxide layer; Be provided with 4 diffusion resistance heating elements and 4 hot sensing temperature elements at the middle part of N trap; 4 hot sensing temperature elements be the thermocouple temperature measurement element and be distributed in 4 diffusion resistance heating elements around, be provided with electricity at the fringe region of oxide layer and draw pad, the electricity that the electricity of 4 diffusion resistance heating elements is drawn pad and 4 hot sensing temperature elements is drawn pad and is drawn pad through metal lead wire and electricity respectively and be connected; Between 4 diffusion resistance heating elements and 4 hot sensing temperature elements, be provided with hot isolation channel, said heat is isolated in groove depth and the attenuate silicon substrate.
A kind of preparation method of the hot type wind speed wind direction sensor based on reduction process is described below:
The first step, the preparation of silicon
Step 1 is at silicon surface heat first thermal oxide layer of growing;
Step 2, chemical vapor deposition silicon nitride layer on first thermal oxide layer;
Step 3 utilizes the RIE technology that silicon is carried out etching, the definition active area;
Step 4, chemical vapor deposition second oxide layer;
Step 5 utilizes the CMP technology that silicon is carried out polishing;
Step 6, wet etching is removed silicon nitride layer, and field oxide is accomplished in preparation;
Step 8, heat growth gate oxide;
Step 10, chemical vapor deposition the 3rd oxide layer, wherein first thermal oxide layer, second oxide layer and the 3rd oxide layer are merged into an oxide layer;
Second step, attenuate and encapsulation
Step 1 is coated with paraffin layer in the front of silicon;
Step 2 adheres to microslide through paraffin layer in the front of silicon under 80 ℃ of environment temperatures;
Step 3, utilize reduction process to the substrate of silicon carry out attenuate until substrate thickness be 80 microns to 100 micrometer ranges, obtain the attenuate silicon;
Step 4 is coated with heat-conducting glue at the attenuate silicon back side, and sticks ceramic substrate, under 100 ℃ of environment temperatures, heat-conducting glue is cured;
Step 5 is removed microslide and paraffin layer under 80 ℃ of environment temperatures;
In the 3rd step, the preparation of wind speed wind direction sensor is accomplished in scribing.
The present invention utilizes CMOS technology on silica-based, to prepare heating element and hot sensing temperature element; Utilize the DRIE dry etch process between heating element and hot sensing temperature element, to prepare 50 microns dark hot isolation channels, be used to reduce the transverse heat transfer effect between heating element and the hot sensing temperature element; Utilize the reduction process of silicon substrate mechanical lapping and polishing that the silicon substrate that comprises heating element and hot sensing temperature element is carried out attenuate; Remove most silicon substrate until the thickness of silicon substrate at 80 microns to 100 micrometer ranges; The thermal capacity of chip can be reduced so to a great extent, in the sensitivity that improves chip, the sensor's response time can be reduced; The ceramic substrate that utilization has certain thermal conductivity seals to the back side of attenuate silicon through the heat conduction sticker; Ceramic substrate is protected the attenuate silicon to avoid the pollution of external environment on the one hand and mechanical support is provided, and realizes the heat interchange of attenuate silicon and external environment on the other hand as middle heat transfer medium.The silicon substrate is being carried out in the process of attenuate; At first utilize paraffin that silicon is labelled on the microslide; Utilize microslide to the attenuate silicon necessary mechanical support to be provided, the attenuate silicon that utilizes heat-conducting glue will still post microslide then pastes and seals to ceramic substrate, fuses paraffin at last again; Remove microslide; Accomplish the preparation of sensor, such preparation process can prepared the sensor chip of substrate thickness at 80 microns to 100 microns, and the chip structure to fragility provides necessary mechanical support in the whole last handling process of sensor package and scribing.
The present invention conducts in the ceramic substrate through the substrate of attenuate silicon and the heat-conduction effect of heat-conducting glue through the heat that the heating element that is prepared in the attenuate silicon produces; In ceramic substrate, set up a temperature field; The ceramic substrate exposed is in external environment; The temperature field that the variation of external environment apoplexy can influence in the ceramic substrate distributes; Transmission through heat-conducting glue can distribute the temperature field that changes in the ceramic substrate and be transmitted back in the attenuate silicon substrate, and the silicon substrate of the hot sensing temperature element in the attenuate silicon after through attenuate measured this temperature field variation in temperature distribution situation.Under the calm condition in the external world, the distribution in temperature field presents the state of complete symmetry.When the external world has wind out-of-date from the ceramic substrate upper surface blown; Wind will be taken away the heat of part with the mode of thermal convection from the ceramic substrate upper surface; And in ceramic substrate, set up a temperature gradient distribution field along the wind direction direction; Silicon substrate and the conduction of heat of heat-conducting glue of hot sensing temperature element after through attenuate measured the variation that this temperature field distributes, and then can calculate the size of wind speed and direction.
In sensor construction, seal the attenuate silicon that is used to protect lower floor on the one hand to the ceramic substrate at the attenuate silicon back side through the heat conduction sticker and necessary mechanical support is provided, on the other hand again as the sensitive element of the variation of the extraneous wind of impression.Whole sensor has only the upper surface of ceramic substrate and the environment of wind to contact, and other elements are all isolated through ceramic substrate and external environment, therefore can avoid receiving the pollution of external environment.The structure of sensor of the present invention is applicable to the wind speed wind direction sensor of preparation two dimension.
In this Sensor Design scheme, in the preparation of first step silicon, utilize standard CMOS process to prepare heating element and hot sensing temperature element; In the preparation of hot isolation channel of second step, utilize the DRIE dry etch process; In the 3rd step silicon substrate thinning, utilize the reduction process of silicon substrate mechanical lapping and polishing; The 4th step ceramic substrate pastes in the envelope encapsulation, utilizes the technology of being coated with that heat-conducting glue is coated with the back side to ceramic substrate, then envelope is pasted at the back side of attenuate silicon; The 5th step, scribing.Whole sensor prepares process and standard CMOS process is compatible, and can realize the wafer level packaging of sensor chip.
The present invention obtains following effect:
1. the present invention utilizes the DRIE dry etch process between silicon front surface heating element and hot sensing temperature element, to prepare 50 microns dark hot isolation channels, can effectivelyly reduce the transverse heat transfer effect between heating element and the hot sensing temperature element; Utilize the reduction process of silicon substrate mechanical lapping and polishing that the silicon substrate that comprises heating element and hot sensing temperature element is carried out attenuate; Remove most silicon substrate until the thickness of silicon substrate at 80 microns to 100 micrometer ranges; Can reduce the thermal capacity of chip so greatly, reduce the thermal response time and the sensitivity that improves sensor of sensor.
2. can make the heat overwhelming majority that heating element produces through silicon substrate vertical conduction to the attenuate silicon back side behind the attenuate in the chip structure form that attenuate silicon front surface has a hot isolation channel; Can completely cut off the transverse heat transfer between heating element and the hot sensing temperature element to a great extent, so greatly degree reduces because the unnecessary power consumption that the heat-conduction effect of silicon substrate causes.
3. the silicon substrate carries out in the process of attenuate; At first utilize paraffin that the silicon front is labelled on the microslide; Attenuate silicon after utilizing microslide to attenuate provides necessary mechanical support; The attenuate silicon back side that utilizes heat-conducting glue will still post microslide is then pasted and is sealed to ceramic substrate, and fusion paraffin under 80 ℃ of-100 ℃ of environment is removed microslide at last; Accomplish the preparation of sensor, such preparation process all provides the mechanical support of necessity can preparing substrate thickness to the chip structure of fragility in the whole process of 80 microns to 100 microns attenuate silicon and sensor package and scribing
4. the ceramic substrate that utilization of the present invention has certain thermal conductivity seals to the thin film silicon chip back through the heat conduction sticker; Necessary mechanical support can be provided for the chip structure of fragility; And protect sensor to avoid the pollution of external environment, simultaneously between attenuate silicon and the external environment heat passage being provided.
Traditional CMOS integrated anemograph; Aspect the heat conduction of reduction silicon-based substrate; A kind of method is to utilize wet corrosion technique to prepare heat insulation cavity at the silicon back side and heating element corresponding region; Its shortcoming is that the thermoinduction film of preparing is too fragile, and thermal stress is bigger to the influence of input, and can't realize the encapsulation of sensor.Another kind method is a preparation porous silicon thermofin below heating element, and so preparation technology and standard CMOS process are incompatible, and preparation technology's consistance of porous silicon is relatively poor, have improved the difficulty of rear end sensor signal conditioning.The sensor construction that the present invention proposes adopts the standard CMOS process preparation; Prepare hot isolation channel and can reduce heat that the sensor heating element produces effectively because the thermal loss that heat-conduction effect causes makes most heats carry out the variation that heat interchange comes wind speed and direction in the perception external environment through ceramic substrate and air the structural design that the silicon substrate carries out attenuate; Prepare the sensitivity that very thin attenuate silicon substrate can improve sensor greatly, therefore can under lower power consumption, obtain bigger output signal.The form of this wafer level packaging is compared with the wind speed wind direction sensor of traditional single-chip package; Greatly reduce the packaging cost of MEMS device on the one hand; Guarantee the consistance of the deviation that sensor package causes on the other hand to a great extent, reduced the cost of sensor back end signal conditioning.
Description of drawings
Fig. 1 is the synoptic diagram of preparation flow step 1 to the step 4 of silicon.
Fig. 2 is the synoptic diagram of preparation flow step 5 to the step 9 of silicon.
Fig. 3 is the synoptic diagram of preparation flow step 10 to the step 13 of silicon.
Fig. 4 is the top view of silicon.
Fig. 5 is for carrying out attenuate and rapid 1 synoptic diagram to step 3 that pastes the envelope ceramic package to the silicon substrate.
Fig. 6 is for carrying out attenuate and rapid 4 synoptic diagram to step 5 that paste the envelope ceramic package to the silicon substrate.
Fig. 7 is the monolithic sensor chip after the final scribing.
Embodiment
Embodiment 1
A kind of preparation method of the hot type wind speed wind direction sensor based on reduction process is following:
The first step, the preparation of silicon
Step 1 is at silicon 1 surface heat first thermal oxide layer 2 of growing;
Step 2, chemical vapor deposition silicon nitride layer 3 on first thermal oxide layer 2;
Step 3 utilizes the RIE technology that silicon 1 is carried out etching, definition active area 4;
Step 4, chemical vapor deposition second oxide layer 5;
Step 5 utilizes the CMP technology that silicon 1 is carried out polishing;
Step 6, wet etching is removed silicon nitride layer 3, and field oxide 6 is accomplished in preparation;
Step 8, heat growth gate oxide 8;
Step 10, chemical vapor deposition the 3rd oxide layer, wherein first thermal oxide layer 2, second oxide layer 5 and the 3rd oxide layer are merged into oxide layer 11;
Second step, attenuate and encapsulation
Step 1 is coated with paraffin layer 19 in the front of silicon 1;
Step 2 adheres to microslide 20 through paraffin layer 19 in the front of silicon 1 under 80 ℃ of environment temperatures;
Step 3, utilize reduction process to the substrate of silicon 1 carry out attenuate until substrate thickness be 80 microns to 100 micrometer ranges, obtain attenuate silicon 21;
Step 4 is coated with heat-conducting glue 22 at attenuate silicon 21 back sides, and sticks ceramic substrate 23, under 100 ℃ of environment temperatures, heat-conducting glue is cured;
Step 5 is removed microslide 20 and paraffin layer 19 under 80 ℃ of environment temperatures;
In the 3rd step, the preparation of wind speed wind direction sensor is accomplished in scribing.
The present invention is the scheme of a kind of CMOS of realization integrated anemograph preparation and wafer level packaging.The side that sensor chip contacts with wind facies in the external environment is the upper surface of ceramic substrate 23; Through setting up hot tie-in between heat-conducting glue 22 and the attenuate silicon 21; Because stupalith has certain pyroconductivity; Silicon substrate and the heat-conducting glue 22 of the heat that heating element 9 in the attenuate silicon 21 produces after through attenuate conducts to ceramic substrate 23, sets up the distribution in certain temperature field at the upper surface of ceramic substrate 23.This temperature field is symmetrical distribution around ceramic substrate 23 centers on ceramic substrate 23 under calm condition; Exist in external environment under the condition of certain wind speed, this symmetrical distribution is broken, and generates a temperature gradient field, and the direction of gradient direction and wind direction is consistent.4 hot sensing temperature elements 15 be symmetric configuration be distributed in heating element 9 on the attenuate silicon 21 around; Between heating element 9 and hot sensing temperature element 15, be provided with hot isolation channel 16; Be used to reduce the transverse heat transfer effect between them, increase the useful signal of sensor.The temperature field of ceramic substrate 23 upper surfaces can utilize the thermal conduction characteristic of heat-conducting glue 22 to pass to attenuate silicon 21, conducts to hot sensing temperature element 15 through silicon substrate again, and then measures the change of temperature field situation of ceramic substrate 23 upper surfaces.Output signal to 4 hot sensing temperature elements 15 is handled, and just can obtain the information of wind speed and direction in the external environment.
Traditional CMOS integrated anemograph, the form and the ceramic substrate that generally directly utilize flip chip bonding upside-down mounting or heat-conducting glue to attach are realized encapsulation.Because the thermal conductivity far of silicon is much larger than the thermal conductivity of pottery; Therefore the heat overwhelming majority that heating element produces on the silicon of encapsulation back dissipates with heat conducting mode from silicon substrate; Only have only a spot of heat to produce the thermal convection heat exchange through ceramic substrate and air; Greatly reduce signal of sensor so on the one hand, improved the operating power of sensor on the other hand, reduced the usefulness of sensor.Based on this problem, forefathers propose to make cavity at the silicon substrate back side and perhaps under heating element, make the heat conduction that one deck porous silicon is used to reduce silicon substrate, so just the encapsulation of sensor or the consistance and the CMOS processing compatibility of technology have been proposed challenge.
Among the present invention, utilize CMOS prepared sensor chip; Utilize the DRIE dry etch process at the hot isolation channel of the positive preparation of sensor chip, be used to increase the useful signal of sensor and reduce the interference that heat-conduction effect causes useful signal; The reduction process of utilization and CMOS process compatible carries out attenuate to the substrate of sensor chip, can lower greatly because the sensitivity of useless power consumption that heat conduction effectiveness causes and increase sensor; Utilize ceramic substrate sensor chip to be encapsulated through the sensor chip back side that the heat conduction sticker seals to the attenuate.
Embodiment 2
A kind of hot type wind speed wind direction sensor based on reduction process; It is characterized in that; Comprise attenuate silicon 21; The back side of said attenuate silicon 21 is connected with ceramic substrate 23 through heat-conducting glue 22, is provided with N trap 7 in the front of attenuate silicon 21, on N trap 7, is provided with oxide layer 11; Be provided with 4 diffusion resistance heating elements 9 and 4 hot sensing temperature elements 15 at the middle part of N trap 7; 4 hot sensing temperature elements 15 for the thermocouple temperature measurement element and be distributed in 4 diffusion resistance heating elements 9 around, be provided with electricity at the fringe region of oxide layer 11 and draw the electricity of 14,4 diffusion resistance heating elements 9 of pad and draw the electricity of pad 18 and 4 hot sensing temperature elements 15 and draw pad 13 and draw pad 14 through metal lead wire and electricity respectively and be connected; Between 4 diffusion resistance heating elements 9 and 4 hot sensing temperature elements 15, be provided with hot isolation channel 16, said hot isolation channel 16 dark reaching in attenuate silicon 21 substrates.
Claims (1)
1. hot type wind speed wind direction sensor based on reduction process; It is characterized in that; Comprise attenuate silicon (21); The back side of said attenuate silicon (21) is connected with ceramic substrate (23) through heat-conducting glue (22); Be provided with N trap (7) in the front of attenuate silicon (21); On N trap (7), be provided with oxide layer (11), be provided with 4 diffusion resistance heating elements (9) and 4 hot sensing temperature elements (15) at the middle part of N trap (7), 4 hot sensing temperature elements (15) for the thermocouple temperature measurement element and be distributed in 4 diffusion resistance heating elements (9) around; Be provided with electricity at the fringe region of oxide layer (11) and draw pad (14); The electricity that the electricity of 4 diffusion resistance heating elements (9) is drawn pad (18) and 4 hot sensing temperature elements (15) is drawn pad (13) and is drawn pad (14) through metal lead wire and electricity respectively and be connected, and between 4 diffusion resistance heating elements (9) and 4 hot sensing temperature elements (15), is provided with hot isolation channel (16), and said hot isolation channel (16) reaches in attenuate silicon (21) substrate deeply.
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| CN104061967B (en) * | 2014-07-09 | 2017-05-10 | 东南大学 | Heat type wind speed and direction sensor based on substrate transfer process and packaging method thereof |
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| CN105675917B (en) * | 2016-01-19 | 2018-11-16 | 东南大学 | A kind of hot type air velocity transducer and its packaging method |
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| CN106443056A (en) * | 2016-09-21 | 2017-02-22 | 东南大学 | Wafer level packaging based MEMS wind speed and wind direction sensor structure and packaging method |
| CN113839301A (en) * | 2021-09-23 | 2021-12-24 | 成都英思嘉半导体技术有限公司 | Shell assembly of high-speed optical signal emitting device and high-speed optical signal emitting device |
| CN115599027B (en) * | 2022-12-16 | 2023-03-14 | 西北工业大学 | Low-dimensional aircraft chip microsystem, preparation and control method |
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| CN101692016B (en) * | 2009-07-17 | 2011-08-10 | 东南大学 | Atmospheric pressure sensor compatible with CMOS process and preparation process thereof |
| CN101819214B (en) * | 2010-01-29 | 2011-09-07 | 东南大学 | Integrated anemograph based on ceramics wafer level package and preparation method thereof |
| CN201993380U (en) * | 2011-01-17 | 2011-09-28 | 东南大学 | Hot type wind speed and direction sensor based on thinning process |
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