CN102169094A - Lighting inspection device of organic EL display substrate and method thereof - Google Patents

Abstract

The invention provides a lighting inspection device of an organic EL display substrate and a method thereof. Even the final panel form is a resin sealing structure, the pixel defect can be restored, and the reliability of pixel after defect restoration is high, or the processing time of restoration inspection is short, or the success rate of defect restoration is high, and automation can be achieved and the productivity is high. Power is supplied to a special wiring of lighting inspection enabling each pixel of the organic EL element to light and to a special electrode pad, thereby each pixel is lighted. Based on the lighting result, defective pixels unlighted among all pixels and their positions are measured. When the foreign matter of the defect pixels is irradiated for defect restoration before sealing, a photomask having light-penetrating patterns enabling laser to pass through irradiates the positions of the defect based on the position information and size of the defect.

Description

The light a lamp checkout facility and the method thereof of OLED display substrate

Technical field

The present invention relates to the main substrate is that the defect inspection correcting device of light a lamp checkout facility and the inspection method of lighting a lamp, organic EL display base plate of organic EL display base plate of the unit automatic correction of implementing the bad automatic detection of the demonstration of organic EL panel and selection and dim spot (defective) and defect inspection modification method, organic EL display panel corrective and modification method, organic EL show manufacturing system and manufacture method.

Background technology

Organic EL (display) panel compares with liquid crystal panel that color gamut is wide, brightness is high, response is fast, the visual angle is broad, handle outside these outstanding display performances, the low realization easily of power consumption is lightening, so the universal apace expansion in mobile phone, 2～4 inches other small panel fields of level such as DSC (multifunctional digital code camera), PMP (portable media player).On the other hand, in recent years, the chance of the application start of the digital product of the large-scale panel of needs such as notebook PC, monitor, large-scale TV raises, in related association of display and exhibition, delivered the sample of active large-scale organic EL panel in succession, as at Yang Wan Kim et.al., SID ' 09Digest, shown in the report of p.85 (2009) (non-patent literature 1), delivered the sample of the organic EL panel at 40 inches at maximum diagonal angle.But, when carrying out volume production from now on, several obstacles are arranged, be accompanied by maximization, qualification rate reduces worrying like this situation and displays.That is, the panel area is big more, and the panel unit price is high more, and shortage probability increases on the other hand, and qualification rate reduces, so cause big loss.Therefore, as at Tsujimura et.al., IDW ' 08 Proceedings p.145 point out in the report of (2008) (non-patent literature 2) like that, because the qualification rate that defective causes reduces, high qualification rate strategies different with small panel in large-scale panel become important in order to overcome.As one of important channel of its resolution policy, strong request detects and corrective pitting, makes bad panel become the industrial rational correction technique of qualified panel.

As shown in Figure 1, the manufacturing process of active type organic EL panel generally comprises: the backboard operation that forms film TFT on main substrate; The organic EL film that forms organic EL thin layer, top electrode layer, lower electrode layer, restraining barrier etc. forms operation; Reduce the sealing process that the main substrate of making TFT and organic EL in above-mentioned operation is carried out gas-tight seal with cover glass in order to suppress the life-span that moisture and active oxygen cause; With the panel is the cut-out operation that unit cuts off; Judge the whether qualified inspection operation of lighting a lamp of panel; The installation procedure of external LSI is installed; The whether qualified inspection operation of finally lighting a lamp of panel behind the LSI is installed in judgement.In above-mentioned operation, backboard operation and organic EL film form operation, and be identical with semi-conductive wafer operation with the TFT operation, shows that owing to the defective of foreign matter reason causes bad possibility is very high.Particularly form in the operation at organic EL film, the total film thickness of organic EL thin layer is that the 100nm left and right sides is extremely thin, when between upper electrode and lower electrode, having the foreign conducting matter of the thickness that surpasses organic EL thin layer, upper/lower electrode is short-circuited, even become the defect pixel (aftermentioned Fig. 2) that energising also can not be lit a lamp.

As the correction technique of the defect pixel of OLED display, the technology of record in the known patent document 1,2 so far.

Technology according to patent documentation 1 record, in the passive-type OLED display that simple array drives, remove the zone that is short-circuited etc. from the metal electrode corresponding by using laser with defect pixel, eliminate the short circuit between metal electrode and the transparency electrode thus, metal electrode that part is removed and the organic luminous layer between the transparency electrode become can be luminous, so the repair-deficiency pixel.

Method of restoring defected pixel is disclosed in patent documentation 2, in the organic EL display that constitutes by organic luminous layer and the electrode up and down that clips this organic luminous layer, check whether organic EL film is luminous, when luminous, do not detect foreign matter from the transparency electrode side, by laser radiation being carried out in the zone of the band shape of surrounding this foreign matter from the transparency electrode side, remove opaque electrode film in opposite directions bandedly, eliminate the short circuit of upper/lower electrode thus.

Patent documentation 1: TOHKEMY 2001-118684 communique

Patent documentation 2: TOHKEMY 2005-276600 communique

Non-patent literature 1:Yang Wan Kim et.al., SID ' 09Digest, p.85 (2009)

Non-patent literature 2:Tsujimura et.al., IDW ' 08 Proceedings is (2008) p.145

The active type OLED display is divided into two kinds according to luminous removing direction difference.A kind of be pass the main substrate that becomes the organic electroluminescence pixel base portion take out light the bottom-emission type, another kind takes out the top emission type of light above organic electroluminescence pixel, moisture in order to prevent to cause luminescent lifetime to worsen carries out gas-tight seal with hygroscopic material and cover glass.In either case, the side in that main substrate one side disposes the electrode film up and down that clips organic luminous layer does not restrain contact drying gas to the opposing party's electrode film (the perhaps thin layer of electrode film and inorganic thin film formation) solid.Therefore, handle in the laser radiation that is used for the repair-deficiency pixel, the material of laser irradiating part disperses to the dry gas space, thin layer can be removed to be processed into desirable shape (aftermentioned Fig. 3).In described patent documentation 1,2, because be the structure of a side electrode surface space solid not being restrained, thus can eliminate the short circuit reason of upper/lower electrode by the local irradiation of laser, can the repair-deficiency pixel.

But, as ending material with envelope at Rice field literary composition “ You Machine EL ": report among Network リ one Application テ Network ノ ロ ジ one, 2007 (No6), the p46; for the maximization of tackling organic EL panel and the problem of cost degradation; as new Sealing Technology; having proposed is not hollow structure as described above; but cover the structure of all elements by organic resin, constantly universal as the current main-stream technology.Because element surface is covered by resin, so the space that does not have the material of laser irradiating part to disperse, the short circuit (aftermentioned Fig. 4) of upper/lower electrode be eliminated in the part that can not pass through to eliminate foreign matter and electrode well in this structure.Therefore, many times can't be by laser radiation repair-deficiency pixel, in addition, promptly allow to carry out the pixel reparation but operation nargin significantly reduces.

In addition, when being the active type OLED display, because be that unit has carried out cutting off panel after the gas-tight seal with the main substrate, the state of the form that can power after exposing with splicing ear carries out the defect pixel inspection to each panel, so when repairing the defect pixel of organic EL panel of organic resin hermetically-sealed construction, different with the situation of patent documentation 1,2, organic luminous layer is all restrained by solid with the two sides that clips the upper/lower electrode of organic luminous layer, so be difficult to repair by laser radiation.

The products such as mobile phone of volume production are owing to be that 2～3 inches left and right sides panel size are little now, so even repairing pixel can not guaranteed qualification rate yet, so be not big problem, but as mentioned above, organic EL panel for the organic resin hermetically-sealed construction, do not have effective defect pixel to repair means, for the big picture OLED display that will begin mass production from now on, the industrial new defect pixel rational or that throughput rate is high of strong request is repaired means.

As being used to realize that the high defect pixel of throughput rate repairs the key point of means, the size of foreign matter of defect cause is very small also can detect, find out that to repair success ratio high and can tackle the full automatic stable defect repair means of production line with high-accuracy even problem is to become.As previously mentioned, the total film thickness of organic EL luminescent layer is that the 100nm left and right sides is extremely thin, and the foreign matter that therefore becomes defect cause is the small items about 100nm, and this has just caused problem, as the observing system that detects foreign matter, seek to tackle the highly sensitive means of this size.In addition, particularly in the OLED display of top lighting structure because it is more to form the situation of TFT pattern in the lower floor of organic EL luminescent layer, thus small foreign matter since the influence of this pattern be difficult to detect.In the pixel by laser radiation was repaired, according to the difference of the size of the foreign matter that should remove, shape, material, the difference that produce power absorbs produced big deviation on the property removed, the problem that the success ratio that exists defect pixel to repair reduces.The method that method that beam diameter changes and scanning light beam is removed to desirable shape for each size of foreign matter needs complicated step, becomes big obstacle for the production line full automation of equipment.Therefore, in order to obtain repairing means at industrial rational defect pixel, seek to detect tiny flaw, defect repair success ratio and stability are high, and parameter setting is easy, the defect pixel prosthetic appliance that production is high.

Even in the panel inner structure that can carry out the defect pixel reparation is in the panel of hollow structure, in the pixel after repairing by laser radiation, expose at the organic EL film of laser irradiating part, there is owing to pollution the problem that the luminescent lifetime of this pixel reduces at the inner laser radiation flying that is detained of panel.

In addition, another candidate as the large-scale panel construction that is suitable for the active type OLED display, combination with white organic el device and color filter, but in this structure, need come irradiating laser via the multicolour pattern of color filter, so because the multicolour pattern of color filter causes laser to be absorbed, be difficult to remove foreign matter, can't repairing pixel.

About independent defect pixel inspection technology following problem is arranged.That is, the defect pixel inspection is that unit carries out with the panel, so testing fixture that need be corresponding with various product sizes and gauging fixture and being difficult to realized the robotization of boosting productivity.In addition, because not production linearize, when detecting defect pixel, for the result of the image quality inspection that will implement simultaneously feeds back to previous operation, so need expend time in, the countermeasure that reply improves qualification rate also expends time in.

Summary of the invention

Therefore even to be to provide a kind of final panel form be that resin-sealed structure also can repairing pixel defect to the 1st purpose of the present invention, the reliability height of the pixel after the defect correction, the processing time of check revising in addition is short, or the success ratio height of defect correction, can robotization and light a lamp checkout facility or the inspection method of lighting a lamp of the high OLED display substrate of throughput rate, defect inspection correcting device or defect inspection modification method or the OLED display manufacturing system or the manufacture method of OLED display substrate.

In addition, the 2nd purpose of the present invention is to provide a kind of can check out small defective, or/and the success ratio height repaired of pixel or/and robotization and high OLED display panel corrective and the modification method of throughput rate easily.

The present invention is in order to reach above-mentioned the 1st purpose, the 1st feature is to have: lighting unit, check with the described electrode special pole plate of the main substrate of special-purpose distribution and electrode special pole plate to lighting a lamp of having that each pixel of making organic EL lights a lamp and to power, described each pixel is lit a lamp; And the defect pixel detecting unit, detect defect pixel of not lighting a lamp and position thereof in described each pixel according to the described result of lighting a lamp.

According to the 1st invention, can be for the organic EL panel on the main substrate that has formed organic EL and distribution, to the inspection of lighting a lamp of powering of each panel pixels, can detect non-lighting a lamp (defective) pixel via special-purpose distribution.

In addition, the present invention is in order to reach above-mentioned the 1st purpose, on the 1st feature, the 2nd feature is to have defect correction equipment, it possess the described defect pixel of optical check foreign matter the position foreign matter position detection unit and to the position irradiating laser of described detected foreign matter, revise the defect correction unit of described defect pixel.

According to the 2nd invention owing to can remove rejected region in the described pixel, repair by using laser, so even final panel form be resin-sealed structure or the structure that has made up color filter also can repairing pixel defect.

And the present invention is in order to reach above-mentioned the 1st purpose, and on the 2nd feature, the 3rd feature is to have identifying unit, at least to described defect pixel power supply, judges whether pixel lights a lamp after revising described defect pixel.

In addition, the present invention is in order to reach above-mentioned the 1st purpose, and on the 2nd feature, feature is to have the barrier film forming device, forms again and the together removed barrier film of the described defect pixel of correction.

At H.Lifka et.al., p.1384 SID ' 04 Digest discloses appropriate barrier film formation method in (2004).Listed the vacuum ultraviolet CVD method that can make the silicon-type raw material of the recess planarization film forming that produces because of laser ablation of having used better with low temperature and difference of height spreadability highland; but can be film build method also, be not limited to this with defencive function.

And the present invention is in order to reach above-mentioned purpose, and on the 2nd feature, the 4th feature is to have low-humidity environment to keep the unit, with the described checkout facility of lighting a lamp, defect correction device control at low-humidity environment.

According to the 4th feature,, can guarantee the luminescent lifetime of organic EL panel by maintaining under the low-humidity environment.Keep the unit as low-humidity environment and consider moisture removal mechanism or the structure of keeping by nonactive dry gas.

In addition, the present invention is in order to reach above-mentioned the 1st purpose, and the 5th feature is to have: the film forming group possesses in vacuum environment and is leading the organic EL film forming device that makes organic EL form material filming on (glass) substrate; Light a lamp and check the correction group, it is arranged on the back level of described film forming group, possess the pixel that makes described main substrate and light a lamp and check the checkout facility and of lighting a lamp of the state-detection defect pixel of lighting a lamp, revise the defect correction equipment of described defect pixel according to the check result of the described checkout facility of lighting a lamp; Seal group, it is arranged on described lighting a lamp and checks the back level of correction group, has the water-tight equipment that the one side of described main substrate is sealed with cover glass; The 1st handing-over equipment, it is arranged on described film forming group and described lighting a lamp checked between the correction group, carries out the handing-over of described main substrate; The 2nd handing-over equipment, it is arranged on described lighting a lamp and checks between correction group and the described seal group, carries out the handing-over of described main substrate; And conveying equipment, carry described main substrate.

And the present invention is in order to reach above-mentioned the 1st purpose, and the 6th feature is to have: the film forming step makes organic EL form material filming leading in vacuum environment on (glass) substrate; The step of lighting a lamp lights a lamp described each pixel to each pixel power supply of described main substrate; Defect pixel detects step, detects defect pixel and the position thereof that does not light a lamp in described each pixel according to the described result of lighting a lamp; The defect correction step detects the foreign matter in the described defect pixel and revises described defect pixel; And the sealing step, after revising described defective with a face seal of described main substrate.

According to the 5th, the 6th invention, owing to the inspection of lighting a lamp, the correction of pixel were implemented before sealing process, so can irrespectively check, revise with hermetically-sealed construction.In addition owing to can be that unit checks, revises with the main substrate, so not need in the past be the equipment and the anchor clamps of needed each panel size in the method for inspection, correction of unit with the panel.In addition, owing to can be that the unit is handled organic el device and formed operation to sealing process with the main substrate, institute be so that the easy robotization of whole production line and boosting productivity.

And, the present invention is in order to reach above-mentioned the 1st purpose, on the 5th feature, the 7th feature is to be provided with all low-humidity environments to keep the unit, check the correction group except described lighting a lamp, also described seal group, described the 1st handing-over equipment, described the 2nd handing-over equipment and described conveying equipment are controlled at low-humidity environment.

According to the 7th invention, because the substrate conveying equipment that can be controlled at low humidity by environment with organic el device form operation, check revise operation, sealing process links up, and with whole Working Procedure Controlling at low humidity, so can suppress the humidity that the counter plate luminescent lifetime impacts.

Preferred example as the organic EL film film-forming apparatus that in organic display manufacturing system of the present invention, uses, listed vacuum film formation equipment, the coating drying equipment, the gas phase film-forming apparatus, laser transcription film-forming apparatus etc., as the object lesson of vacuum film formation equipment at Hae Won Kim et.al., SID ' 09Digest, p.1359 disclose in (2009), object lesson as the coating drying equipment, at Shuichi Takei et.al., SID ' 09 Digest, ink-jet method is disclosed p.1351, at Reid J.Chesterfield et.al., SID ' 09 Digest, p.954, the method for using the shower nozzle printer is disclosed in (2009), at Markus Schwambera et.al., IMID ' 09 Digest, disclose in 1140 (2009) organic EL Material has been placed on the object lesson that the gas phase that is deposited on the nonactive air-flow on the substrate becomes embrane method, pass through the object lesson of laser transcription laser reprint method of film forming on substrate at organic EL film of film forming on the support as handle, at Takashi Hirano et.al., SID ' 07 Digest, p1592 discloses the LIPS method in (2007), at Seong Taek Lee et.al., SID ' 07 Digest, p1588 discloses the LITI method in (2007), but also can be that organic EL becomes film unit, there is no particular limitation for film build method.

In addition, the present invention is in order to reach above-mentioned the 1st purpose, on the 2nd or the 5th or the 6th feature, the 8th feature is the state of lighting a lamp after described each pixel power supply by picture catching, according to described image, be that unit checks in line defect, inhomogeneous, the pixel and at least a bad in the color fringe to carry out the judgement of non-defective unit defective products with described panel, described defect correction is selected the bad described panel that only has described defect pixel, revises described defect pixel.

According to the 8th invention, because can after the bad panel outside removal comprises the non-pixel of lighting a lamp,, dwindle the scope of the panel that revise, so throughput rate improves in order to carry out the reparation of picture element flaw.

And, the present invention is in order to reach above-mentioned the 1st purpose, on the 5th or the 6th feature, the 9th feature is to have the underlying TFT pattern estimated on the main substrate and the pattern deviation between the organic light emission layer pattern, this pattern deviation is fed back to the unit of the pattern of pixels position contraposition of described organic EL film forming device as bias.

For example, in vacuum film formation equipment,, each color is applied respectively with shadow shield, but along with becoming high-precision mask or large-scale mask, because in conjunction with the deviation of the position of shadow shield, the possibility of blend of colors increases because separate red, indigo plant, green each pixel form pattern.In the inspection correction of OLED display substrate, the pattern that measurement is made in backboard formation operation and the deviation of organic membrane pattern, by this departure is fed back to vacuum film formation equipment as bias, the deviation when preventing the contraposition of shadow shield position can improve qualification rate thus.

In addition, the present invention is in order to reach the 1st purpose, and on the 2nd or the 5th feature, the 10th feature is that described defect correction equipment is placed in described main substrate in the low-humidity environment, makes described laser shine described foreign matter via transparency window.

Check in the corrective in OLED display of the present invention, luminescent lifetime in order to ensure organic EL panel, preferably in this inspection corrective, also have by moisture removal mechanism or nonactive dry gas and will check that environment and Laser Processing environment are controlled at the structure of low humidity, but, more preferably, for use amount and the management dewfall point that reduces nonactive dry gas, wish to become the structure that reduces internal volume.Promptly, the objective table of maintenance substrate is being controlled in the structure of low humidity by moisture removal mechanism or nonactive dry gas, on this structure, be provided with and make the windowpane of checking that required light or laser see through, check system, the check system of the interior defective of pixel, the correction of checking of lighting a lamp uses LASER Illuminator System outside this structure, check correction via described windowpane, check corrective and OLED display manufacturing system by such OLED display, can significantly reduce the necessary internal volume of non-active gas.

Further, the present invention is in order to reach above-mentioned the 2nd purpose, the 11st feature is when the defective irradiating laser of the described pixel on the main substrate that has formed pixel by organic EL is revised this defective, positional information and size according to described defective, via having the photomask that makes the printing opacity pattern that described laser sees through, the position of described defective is shone.

According to the 11st feature of the present invention, can revise defectives such as dim spot conscientiously by the printing opacity pattern of photomask according to position in the bad pixel of the foreign matter of checking out and size.

In addition, the present invention is in order to reach above-mentioned the 2nd purpose, and on the 11st feature, the 12nd feature is that the image of the image of the non-bad pixel of lighting a lamp and normal pixel is compared, and detects the position and the size of the described defective in the non-bad pixel of lighting a lamp.

According to the 12nd feature of the present invention, the detection of the small defective in the observing system of corrective of the present invention, be the difference images of image of the homochromy normal pixel of image by obtaining the non-bad pixel of lighting a lamp and adjacency, can remove background signal, improve for example contrast of foreign matter.In addition, as the top emission type structure, even have the TFT pattern in the lower floor of organic luminous layer, these are eliminated in difference images, only emphasize foreign matter, so easily check out foreign matter.Detected foreign matter be owing to can measure position and size in the bad pixel, so can obtain positional information and size information, in addition, the parameter during as laser radiation is classified size information by size and to be carried out data storage.

And the present invention is in order to reach above-mentioned the 2nd purpose, and on the 11st feature, the described printing opacity pattern of the 13rd feature is to surround around the described defective, can remove the pattern on every side of described defective bandedly.

According to the 13rd feature of the present invention,, can improve the defect repair success ratio by carrying out laser radiation via be provided with the photomask that surrounds defective printing opacity pattern on every side bandedly.As mentioned above, when wanting laser ablation to contain foreign matter regional, because the difference that the difference produce power of the size of the foreign matter that should remove, shape, material absorbs produces big deviation on the property removed, the success ratio that defect pixel is repaired reduces.If laser does not shine foreign matter, but remove its periphery, can eliminate the short circuit situation, so the pixel reparation.Therefore, if irradiation surround defective around, can remove bandedly described defective around the laser of printing opacity pattern, can remove the material of homogeneity all the time, so can not be subjected to the influence of the rerum natura of foreign matter.In addition,, then do not need to adjust the size and the intensity of laser, in addition, eliminated the complicacy that makes laser scanning around foreign matter according to the foreign matter diameter if in photomask, generate light beam by the printing opacity pattern that can remove bandedly.

In addition, the present invention is in order to reach described the 2nd purpose, and on the 11st feature, the 14 is characterised in that described printing opacity pattern is the printing opacity pattern of diameter greater than described defective.

According to the 14th feature of the present invention, use the big light beam of the diameter that enough surpasses defectives such as foreign matter to shine, size information according to foreign matter, use is bigger and can dwindle the optical mask pattern of removal scope than foreign matter diameter, carry out laser radiation via this optical mask pattern in the foreign matter position, thus can repairing pixel.At this moment, improved the inhomogeneity laser of intensity in the light beam in advance, can shine the high laser of homogeneity all the time, removed stability so can improve by using.In addition, be made as necessary Min. by the diameter with the printing opacity pattern, can suppress to add Ministry of worker's area, the brightness of the pixel after can suppressing to repair reduces.

And the present invention is in order to reach above-mentioned the 2nd purpose, and on the 13rd or the 14th feature, the 15th is characterised in that described photomask has a plurality of described printing opacity patterns that change size, selects described printing opacity pattern in conjunction with described defect size.

In addition, the present invention is in order to reach above-mentioned the 2nd purpose, and on the 13rd or the 14th feature, the 16th is characterised in that to have a plurality of described photomasks that changed the size of described printing opacity pattern, selects described photomask matchingly with the size of described defective.

According to the of the present invention the 15th or the 16th feature, according to the size information of foreign matter, select bigger and can dwindle the optical mask pattern of removal scope than foreign matter diameter, by via this optical mask pattern laser radiation foreign matter position, can corrective pitting.Suppress can suppress to add Ministry of worker's area for less by shining diameter, the brightness of the pixel after can suppressing to repair reduces.

In addition, according to the 13rd feature of the present invention and the of the present invention the 15th or the 16th feature, the printing opacity pattern surrounds around the defective, can remove the printing opacity pattern on every side of defective bandedly, the photomask that possesses the big or small a plurality of settings that changed this printing opacity pattern by employing, select to make the regional mechanism that carries out laser radiation for minimal printing opacity pattern of removal matchingly with the size of defective, can shorten the needed time of laser radiation.That is, the foreign matter information of system is according to the observation selected optimally from store a plurality of printing opacity patterns, makes photomask carry out laser radiation directly over moving to foreign matter, so the equipment action is few.Therefore, can shorten pixel repair time, throughput rate improves.Particularly must repair in the corrective of a plurality of pixels, reduction in processing time is integral, and corrective of the present invention is effective structure in this, so help the production linearize.

And, the present invention is in order to reach above-mentioned the 2nd purpose, on any one feature of the 13rd to the 14th feature, the 17th is characterised in that to possess structure, having the objective table and described LASER Illuminator System and the described observing system that keep described main substrate in this structure inside, is low humidity by moisture removal mechanism or nonactive dry gas with the internal control of described tectosome.

According to the 17th feature of the present invention, can guarantee the luminescent lifetime of OLED display panel.

In addition, the present invention is in order to reach above-mentioned the 2nd purpose, on any one feature of the 13rd to the 14th feature, the 18th is characterised in that to possess structure, lay the objective table that keeps described main substrate in this structure inside, the laser oscillator that carries out described laser radiation is located at outside the described structure, shines described laser via the penetrating window that is located on the described structure.

And, the present invention is in order to reach above-mentioned the 2nd purpose, on any one feature of the 13rd to the 14th feature, the 19th is characterised in that to possess structure, lay the objective table that keeps described main substrate in this structure inside, described observing system is located at outside the described structure, checks the position and the size of described defective via being located at penetrating window on the described structure.

According to the of the present invention the 18th or the 19th feature, use amount and the management of dewfall point in order to reduce nonactive dry gas can become the structure that has reduced internal volume.Promptly, the objective table of maintenance substrate is in by moisture removal mechanism or nonactive dry gas and is controlled in the structure of low humidity, on this structure, be provided with and make the windowpane of checking that required light and laser see through, the observing system of defective, correction use LASER Illuminator System outside this structure in the pixel, revise via described windowpane, check corrective by such OLED display, can significantly reduce the required internal volume of non-active gas.

In addition, as with the example of the method for the position of the non-bad pixel of lighting a lamp of the related detection of the present invention, enumerated following method: for the OLED display panel on the main substrate, in the backboard operation, be provided with to lighting a lamp of each panel power supply and check special-purpose distribution and electrode, use the application specific probe power supply to make whole pixels luminous for this main substrate, detect the non-pixel of lighting a lamp.Even final panel-form is resin-sealed structure or the structure that has made up color filter, also can repairing pixel defect.

In addition, check in the corrective that level keeps substrate to come it is handled usually, but in order to reduce the hold facility area, also can be that substrate is remained vertical structure in OLED display of the present invention.

According to the present invention, even it is resin-sealed structure that final panel-form can be provided, the reliability height of the pixel after the defect repair, check that in addition the processing time of revising is short, or the success ratio height of defect correction, light a lamp checkout facility or the inspection method of lighting a lamp of can the automated production rate high OLED display substrate, defect inspection correcting device or defect inspection modification method or the OLED display manufacturing system or the manufacture method of OLED display substrate.

In addition, according to the present invention, can provide a kind of and can detect the success ratio height of tiny flaw or/and pixel reparation or/and OLED display panel corrective and the modification method that robotization is easy and throughput rate is high.

Description of drawings

Fig. 1 is the figure of example of the manufacturing process of the active square organic EL panel of expression.

Fig. 2 is the concept map of the reason of remarked pixel defective.

Fig. 3 is the concept map of the repair mechanism of remarked pixel defective.

Fig. 4 is the concept map of the reason that expression can not repairing pixel defect.

Fig. 5 is the element section figure of the bottom-emission hollow sealing of evaluation.

Fig. 6 is the resin-sealed element section figure of bottom-emission that estimates.

Fig. 7 is the element section figure of the top light emitting hollow sealing of evaluation.

Fig. 8 A is the resin-sealed element section figure of top light emitting that estimates.

Fig. 8 B is the table of the dependent comparative evaluation of laser repairing structure of the non-defect pixel of lighting a lamp of expression, the pixel correction qualification rate: be that good (zero), 80%～20% is poor (*) for general (△), below 20% more than 80%.

Fig. 9 forms the planimetric map of pixel power supply with the main substrate of special-purpose distribution and electrode pad.

Figure 10 is the figure of structure of the checkout facility of lighting a lamp of expression an embodiment of the invention.

Figure 11 is the figure of the coordinate of the picture element flaw checked out by the checkout facility of lighting a lamp of expression.

Figure 12 is the structural drawing of defect correction equipment of the use laser of expression one embodiment of the present invention.

Figure 13 is the figure of the situation of defective in the pixel that should revise of expression and the pixel.

Figure 14 A is the example that expression has used the pixel internal short-circuit of photomask to repair.

Figure 14 B is another example that expression has used the pixel internal short-circuit of photomask to repair.

Figure 15 is the situation of the pixel before and after the expression defect correction is handled.

Figure 16 be expression an embodiment of the invention use the figure of example of manufacturing process of the active type organic EL panel the when checkout facility of lighting a lamp, defect correction equipment.

Figure 17 is the figure of example of structure of the OLED display manufacturing system of expression an embodiment of the invention.

Figure 18 is the figure of the example of the expression checkout facility of lighting a lamp that reduces the space be full of nonactive dry gas.

Figure 19 is the figure of the example of the expression defect correction device that reduces the space be full of nonactive dry gas.

Figure 20 is the figure that the deviation to underlying TFT pattern and organic light emission layer pattern describes.

Symbol description

10: the OLED display manufacturing system

20: organic EL film forming device group

30: with the main substrate is the inspection corrective group of lighting a lamp of the pixel of unit

40: water-tight equipment group 45: substrate

50,60,80: connection device 51: vacuum transmiting chamber

52: transfer chamber 90: transfer robot

100a: defect pixel 100b: normal pixel

100c: recovered luminous pixel

100d: the pixel of not repairing by laser radiation

101: cover glass 102: resin bed or hollow layer

103: 104: the 2 electrodes of barrier film

105,107: 106: the 1 electrodes of insulation course

108: the main substrate 109 that is in the glass plate state: wiring layer

110:TFT element 120,120a, 120b: organic luminous layer (film)

130: foreign conducting matter 140: pulse laser

150: by the flying 160 of laser: hollow layer

170: the peristome 180 that generates by laser radiation: resin bed

190: 200: the 2 electrodes (opaque) of laser burn portion

301: panel zone 302: the display part zone

303: grid LSI installation region 304: source electrode LSI installation region

305: gate portion power consumption utmost point pole plate 306: gate portion power supply distribution

307: source portion power consumption utmost point pole plate 308: source portion power supply distribution

309: the 2 electrode 310: the 2 electrode power supply distributions of power supply pole plate

320: main substrate (has a special-purpose power supply distribution: Fig. 9) 321,803: objective table

322: gate portion is powered with probe 323: source portion power supply probe

324: linear transducer 330: defect pixel

400: laser oscillator 401: laser

402: optical beam expander 403: homogenizer

407,407A: mask 408: mask objective table

409: imaging len 410,412: semi-transparent semi-reflecting lens

411: object lens 413: imaging apparatus

414: image processing part 415: imaging len

416: collimation lens 417: light source

420: projected light 450: observing system

460: LASER Illuminator System

501R: red sub-pixel 501G: green sub-pixels

501B: blue subpixels 500R: defect pixel

510R: recovered the pixel 520 of lighting a lamp: laser irradiating part

600: laser ablation portion 601: light shielding part

602: peristome 701,702,703: organic EL film forming device

704,705: the 2 electrode film forming devices 706: barrier film forming device

710,711,806: the checkout facility 712,713,714,715 of lighting a lamp: defect correction equipment

721: water-tight equipment 800: windowpane

802: probe 803,813: structure

804,816: transfer chamber 805,812: objective table

810: windowpane 815: the laser correcting device

820: LASER Illuminator System 901: gate line

902: data line 910: organic luminous layer

Embodiment

Below, according to accompanying drawing embodiments of the present invention are described.But this embodiment does not limit technical scope of the present invention.

At first, even use the cross-sectional conceptual figure of the top light emitting active type OLED display of Fig. 2 that the also reason of non-luminous defect pixel of energising is described.It only is to use the film operation to form the 1st electrode 106 etc. of TFT element 110, wiring layer 109, insulation course 107, insulation course 105, organic EL portion on the main substrate 108 of state of glass substrate that this equipment at first is being in the backboard operation.Use the pattern of shadow shield vacuum evaporation organic luminous layer 120 (120a, 120b) on the pattern of the 1st electrode 106, and do not break vacuum and form the 2nd electrode 104 continuously, form barrier film 103, form organic EL.Cause the life-span to be reduced in order to prevent moisture and for the protection of machinery, use cover glass 101 to seal, equipment is finished, but according to the difference of mode, becomes resin bed or hollow layer 102 between cover glass and the organic EL side group plate.

The thickness of organic luminous layer 120 is that the 100nm left and right sides is extremely thin, when big foreign conducting matter that exist to break through this thickness between the 1st electrode 106 and the 2nd electrode 104 conducts electricity 130 the time, the 1st electrode 106 and the 2nd electrode 104 are short-circuited, and become non-luminous defect pixel 100a.Even foreign matter does not have electric conductivity, also there are the small small opening that begins owing to interface, situation about being short-circuited from foreign matter and organic luminous layer.

Under the situation that between cover glass and the organic EL side group plate is hollow layer and under the situation of resin bed, in the defect repair effect of laser radiation, there is difference, easy repair-deficiency under the situation of hollow layer (structure).Fig. 3 is the concept map that is illustrated in to the repair mechanism of picture element flaw under the situation of hollow layer 160.When to the light beam of the place irradiated with pulse laser 140 that has foreign matter, the 2nd electrode 104 of irradiation portion, organic luminous layer 120b, foreign conducting matter 130 disperse under the thermal shock of laser, produce peristome 170.Do not have the pixel of the remnants of opening to be open circuit, become the pixel 100c that recovers luminous from short-circuit transition.With respect to whole elemental area,, then in fact play a role as no problem pixel if the area of the peristome 170 that is generated by laser radiation is little.

On the other hand, when being resin bed (structure) 180 between cover glass and the organic EL side group plate, be difficult to repair.Fig. 4 is the concept map of the reason that expression can not repairing pixel defect.Even to the light beam of the place irradiated with pulse laser 140 that has foreign matter, because by resin-sealed, so there be not because the space that the analyte that the thermal shock of laser produces disperses luminous do not recover (100d) that only burn of irradiation portion 190.

In order to confirm this point experimentally, for top lighting structure and bottom-emission structure the two, about the panel inner structure after the air seal is hollow structure and the structure that covers whole element with organic resin, estimates the possibility of the defect pixel reparation of being undertaken by the local irradiation of laser.The cross-sectional conceptual figure of the active type organic EL panel that expression is estimated in Fig. 5～Fig. 8.Fig. 5 is that element section figure, Fig. 6 of bottom-emission hollow sealing is that bottom-emission resin-sealed element section figure, Fig. 7 are that element section figure, Fig. 8 A of top light emitting hollow sealing is the resin-sealed element section figure of top light emitting.The non-defect pixel of lighting a lamp of estimating panel is green sub-pixel (sub-pixel), foreign matter diameter 0.5～2um, laser is that pulse laser, the beam diameter of 532um is 10um, after the appropriate change energy density is carried out laser radiation, estimated the reparation state of the non-defect pixel of lighting a lamp by the testing fixture of lighting a lamp.Evaluation result is shown in Fig. 8 B.In any one of top lighting structure and bottom-emission structure, though the reparation of defect pixel success in hollow structure (Fig. 5, Fig. 7), but at organic resin hermetically-sealed construction (Fig. 6, Fig. 8 A) though in change lasing condition and shine, defect pixel is not repaired yet.According to above result, confirmed in resin-sealed structure, to be difficult to by the laser radiation repairing pixel.

The following describes with above-mentioned assay is the embodiments of the invention that background obtains.

[embodiment 1]

Fig. 9 be embodiment of the present invention formation pixel power supply planimetric map with the main substrate of special-purpose distribution and electrode pad.In the backboard operation when the main substrate 320 of TFT and distribution has been made in manufacturing, in order to be that unit powers together, make gate portion power consumption utmost point pole plate 305, gate portion power supply distribution 306, source portion power consumption utmost point pole plate 307, source portion power supply distribution 308, EL element the 2nd electrode power supply solder joint 309, EL element the 2nd electrode power supply distribution 310 simultaneously on the both sides of substrate with the main substrate.Also make needed other distribution of panel lighting simultaneously.In addition, adopted in the present embodiment, but also can be the structure of powering from 1 limit from the structure of main substrate both sides power supply.

Though not record at length, gate portion power supply distribution 306 and source portion power supply distribution 308 arrive each pixel in display part zone 302 further respectively in gate pole LSI installation region 303 and source electrode LSI installation region 304 branches.When organic EL film formed the operation end, becoming can also be at the state of EL element the 2nd electrode power supply, so by applying voltage from these power supplies with special-purpose distribution, the whole pixels on the main substrate are lit a lamp.In inspection unwanted these electrode special pole plates in back and the distribution zone of lighting a lamp, in panel cut-out operation, cutting off and being rejected from panel zone 301 with display part zone 302, do not stay in the products panel.

Figure 10 is the figure of structure of the checkout facility of lighting a lamp of expression embodiment of the present invention.This device comprises objective table 321, gate portion and organic EL the 2nd electrode power supply and powers with probe 323, the linear transducer 324 with movable agency and Flame Image Process external memory 325 with probe 322, source portion.The main substrate of placing on objective table 320 (Fig. 9) that has special-purpose power supply distribution contacts the probe terminal with electrode pad, by power supply whole pixels are lit a lamp.The linear transducer 324 analyzing spot lamp substrates of configuration on main substrate 320, image is taken to lighting a lamp.Total pixel of linear transducer need have the pixel count of Duoing than the whole pixels on the main substrate 320, when total pixel of a linear transducer does not satisfy above-mentioned number, is shared by a plurality of linear transducers and to obtain data.Except linear transducer, also can use tdi sensor, area sensor (TV video camera).

Figure 11 is the light a lamp figure of coordinate of the picture element flaw that checkout facility checks out of expression.From the image of above-mentioned shooting, check out non-luminous as shown in the figure defect pixel (dim spot) 330, each panel is determined its coordinate.About this coordinate points, share coordinate with defect correction equipment described later, in bad pixel position channeling conduct to the needs correction.

In addition, can distinguish the substrate that to revise and the substrate that can not revise according to following algorithm.That is, calculate the quantity of the defect pixel of each panel,, then be judged to be bad substrate, do not carry to defect correction equipment if check out the dim spot of the number that in pipeline cycle, can't revise.In the inspection of lighting a lamp, can be when checking out dim spot, broken string that detection can not be revised and substandard image are inhomogeneous, but also are judged to be bad substrate in this case, do not carry to defect correction equipment.As the uneven reason of image, that can enumerate that the skew of organic EL pattern causes in the inhomogeneous or pixel because of the excimer laser annealing that produces pixel-shift causes when the polysilicon of backboard operation forms is inhomogeneous etc.Thus, can only revise the substrate that revise, not produce unwanted work.

Figure 12 is the figure of an example of structure of the defect correction equipment of expression an embodiment of the invention.Step is as described below.That is, the coordinate data of the defect pixel that extracts according to the checkout facility of lighting a lamp moves main substrate 320 by objective table 321 so that defect pixel be positioned at LASER Illuminator System under.The position probing of the foreign matter in the defect pixel is that the image of the pixel that photographs of system 450 according to the observation carries out, and carries out laser radiation by LASER Illuminator System 460.In addition, LASER Illuminator System 460 can be moved to the position of defect pixel, also can scan light path by known optical instrument.

Structure to defect correction equipment describes.The projected light 420 that penetrates from light source 417 becomes directional light by collimation lens 416, is projecting on the main substrate 320 through after the semi-permeable and semi-reflecting mirror 412,410.Reflected light from substrate is derived by semi-permeable and semi-reflecting mirror 412, is taken by the pixel image on 413 pairs of main substrates 320 of imaging apparatus through imaging len 415.Image is handled by image processing part 414, calculates the position of foreign matter, critically moves to the position of foreign matter with being placed on mask 407 on the mask objective table 408.

By optical beam expander 402 laser 401 from laser oscillator 400 irradiations are expanded to the beam diameter of regulation, use homogenizer 403 to guarantee the homogeneity of the laser intensity on whole in the laser radiation zone.Make laser after the shaping by being arranged on the mask 407 on the mask objective table 408, after further by imaging len 409 and object lens 411, laser radiation is to the correction position on the main substrate of laying on the substrate objective table 321 320.

Configuration imaging len 409 and object lens 411, so that the picture of mask 407 projects on the main substrate 320, the size according to the multiplying power of the focal length of imaging len 409 and object lens 411 looks like mask to project on the main substrate 320.By this optical texture, the light transmission part that can pass mask 407 is to the area illumination laser after dwindling.

The Wavelength of Laser of irradiation can be selected from the scope of 200～1100nm.Though enumerated 266nm, 532nm, 1064nm equiwavelength as typical wavelength, can select matchingly with the optical absorption characteristics of organic luminous layer.

Figure 13 is the pixel that should revise of expression and the enlarged drawing of pixel periphery.A pixel is made of red sub-pixel 501R, green sub-pixel 501G, blue these 3 sub-pixels of sub-pixel 501B, and size shape is identical sometimes different sometimes.About the detection of the foreign matter in the non-defect sub-pixels of lighting a lamp, can improve the contrast of foreign matter by obtaining the difference images of normal sub-pixel and defect sub-pixels.Thus, can detect the position of other foreign matter of submicron order from the 100nm rank.For example, the difference images of the normal pixel 501R of the same color by obtaining defect pixel 500R and adjacency can detect small foreign matter 502 in the image of understanding, can detect position in the pixel of small foreign matter.

Figure 14 A, Figure 14 B represent to use the example of the short circuit in the photomask repairing pixel.Mask 407 has the peristome 602 of light shielding part 601 and the ring-type that diameter is bigger than foreign matter 600 in the picture plane, the positional information that detects according to foreign matter moves to mask 407 on the foreign matter 130, by laser radiation, remove the 2nd electrode film 104, barrier film 103 and organic light emission film 120b in the mode of surrounding the foreign matter periphery in the defect pixel 330, eliminate short-circuit condition.Foreign matter is included in the laser ablation foreign matter of interior diameter by irradiation, can eliminate short-circuit condition, but foreign matter 130 is because the 2nd electrode film 104, barrier film 103 are different with optical absorption characteristics and the physical property of organic light emission film 120b, removes the required energy of foreign matter according to the kind of foreign matter and big or small and different.Therefore, the nargin of the property removed is little, removes success ratio and reduces, but when carrying out laser radiation in the mode of surrounding the foreign matter periphery, remove the material of same nature all the time, so the nargin of the property removed is wide.Can preestablish the diameter of peristome ring-type the area that allows pixel intensity to reduce as the upper limit with being sufficiently more than the foreign matter diameter.

In addition, shown in the photomask 407A as shown in Figure 14B, prepare the different pattern of a plurality of ring diameters, according to the observation the foreign matter information of system 450 (with reference to Figure 12), can separate use matchingly with the size of foreign matter, so that greater than foreign matter and make and remove the area minimum.In view of the above, the brightness reduction of repairing pixel can be restricted to minimum.As the laser irradiating method of removing periphery in the mode of surrounding foreign matter, the method processing time of the use photomask shown in weak point is repaired the qualification rate height here, has good stability.That is, owing to be predetermined the light beam formation condition, the photomask traveling time takies the processing time hardly, so can handle at a high speed.

Figure 15 represents the situation of the pixel before and after the defect correction processing.Foreign matter 502 irradiating lasers to defect pixel 500R are eliminated short-circuit condition, and laser irradiating part 520 becomes non-illuminating part in having recovered the pixel 510R that lights a lamp.If the area of this part is littler than remaining illuminating part, people's eyes almost can not identify when whole front panel is lit a lamp so.Because normal pixel 501R is proportional with the brightness ratio and the illuminating part area that have recovered the pixel 510R that lights a lamp, so can stipulate non-illuminating part according to deviser's non-luminous permission rate, i.e. the diameter of the peristome 602 of the ring-type of mask 407.For example, if non-luminous permission rate is 5% in the light-emitting area of 200umx80um, the so maximum diameter that can allow 16um.Form the foreign matter diameter that becomes problem in the operation at organic EL film and be clipped to several micron levels, so also greatly nargin carry out Laser Processing even considered precision such as contraposition deviation from the 100nm level.

In addition, when during in a plurality of defective candidate that should remove, in the scope of non-luminous permission area, revising a plurality of defectives at pixel internal storage.

In above embodiment, the example that detects defective and revise under the state of main substrate in operation shown in Figure 1 has been described, but can as shown in Figure 1, has been that unit carries out also according to the structure of OLED display panel with the panel.

[embodiment 2]

Figure 16 represent embodiment of the present invention use the example of manufacturing process of the active type organic EL panel when checking correcting device of lighting a lamp.With in existing operation shown in Figure 1, light a lamp and check that operation is that unit handles and compares with the panel, because can be the unit inspection operation of lighting a lamp with the main substrate that does not carry out sealing process, so realize robotization easily, in addition, the hermetically-sealed construction of tube face plate is not how, can both be taken into the correction operation that can revise picture element flaw, so can improve the qualification rate of the panel of the resin-sealed structure that needs in large-scale panel.

Figure 17 represents the example of structure of the OLED display manufacturing system of embodiment of the present invention.Here, the example that carries out organic EL film formation operation by the vacuum film formation mode is described.OLED display manufacturing system 10 is made of following: use vacuum film formation equipment organic EL film forming device group 20, check that as lighting a lamp of the pixel of unit corrective group 30, water-tight equipment group 40 constitute with main substrate.The part of whole organic EL film forming device group 20 is put down in writing, and connects by the group that further has the film-forming apparatus of requirement in the upstream.The substrate 45 that has carried out the organic membrane film forming in the group of upstream is via handing-over equipment 50, is handed off to organic EL film forming device the 701,702,703, the 2nd electrode film forming device 704,705 by transfer robot 90 and barrier film forming device 706 carries out film forming in vacuum transmiting chamber 51.Increase and decrease the quantity of vacuum transmiting chamber according to the ability of film-forming apparatus.

Light a lamp and check and to join substrate between corrective group 30 and the group 20, and by 60 connections of handing-over equipment, this handing-over equipment 60 has the function of replacing vacuum and nonactive dry gas environment.The substrate of sending here from the upstream 45 under the environment of nonactive dry gas, is handed off to each equipment by transfer robot 90 according to process sequence in transfer chamber 52.At first, check defect pixel, deliver to defect correction equipment 712,713,714,715 afterwards with the checkout facility 710 of lighting a lamp.Defect correction equipment is recited as 4 here, but can increase and decrease according to the ability of equipment.After corrective pitting, when further forming barrier film, can return group 20 usefulness barrier film forming devices 706 and form film with the purpose of guaranteeing reliability, also can in the inspection corrective group 30 of lighting a lamp, form film by the additional barrier films forming device.The substrate that correction finishes has been confirmed correction result in the checkout facility 711 of lighting a lamp after, deliver to water-tight equipment group 40 via handing-over equipment 70, the formula of dripping injection method) etc. under nonactive dry gas environment, (One Drop Fill: water-tight equipment 721 carries out gas-tight seal with ODF.The substrate of finishing is transported in the operation of back via handing-over equipment 80.

As mentioned above, because whole operations can be that unit handles with the main substrate, so realize robotization and throughput rate height easily.

[embodiment 3]

Luminescent lifetime in order to ensure organic EL panel, in the inspection corrective of embodiment of the present invention, manage below dew point-70 ℃ by nonactive dry gas such as drying nitrogens, manage and save nonactive dry gas in order easily to carry out dew point, expectation will check that the space in the corrective is reduced to Min..Because the inspection corrective of present embodiment is an equipment of having used optics, so use with the frame structure of glass plate as window, by detection system and LASER Illuminator System are configured in outside the glass plate, can reduce the space of nonactive dry gas significantly.

Figure 18 represents to reduce the example of the testing fixture of lighting a lamp in the space 801 that is full of nonactive dry gas.Objective table 805, main substrate 320 and the probe 802 of testing fixture 806 of lighting a lamp is connected with transfer chamber 804, be in the structure 803 that possesses windowpane 800, linear transducer 324 is outside windowpane, and in the enterprising line scanning of a lamp substrate, image is taken to lighting a lamp.

Figure 19 is the figure of the example of the expression correcting device that reduces the space 811 be full of nonactive dry gas.Laser correcting device 815 objective tables 812, main substrate 320 are connected with transfer chamber 816, are arranged in the structure 813 that possesses windowpane 810, and detection system and LASER Illuminator System 820 are revised the foreign matter of defect pixel on the main substrate outside windowpane.According to above device structure, can reduce the space that nonactive dry gas is full of significantly.

[embodiment 4]

Use the image of taking by the illuminator of laser correcting device in embodiments of the present invention, estimate the pattern deviation between underlying TFT pattern and the organic light emission layer pattern, this pattern deviation is fed back to the pattern of pixels position contraposition of organic EL film film-forming apparatus as bias.

Figure 20 has illustrated an example about the deviation of underlying TFT pattern and organic light emission layer pattern.In backboard formation operation, make gate line 901 and data line 902, in the vacuum evaporation operation, form organic luminous layer 910 (920).Respectively the benchmark of the pattern end face of data line 902 and gate line 901 as x direction, y direction, precompute with the end face of normal organic light emission layer pattern 910 apart from x1 and y1.About mutually away from a plurality of pixels, measure the position x2 and the y2 that begin from the datum line of the organic light emission layer pattern 920 that photographs, calculate departure Δ x, Δ y.By being worth the position contraposition that feeds back to the shadow shield in the organic luminous layer film formation process as bias, can suppress the deviation of organic light emission layer pattern.Because the inspection correction operation of organic EL film film formation process and measured deviation is continuous operation, so can in time feed back measurement result, can suppress the bad generation of pixel deviation.

Usually level keeps substrate to handle in the above-described embodiment, but in order to reduce the hold facility area, also can vertically keep substrate.

Utilize possibility on the industry

As mentioned above, according to the present invention, for the organic EL panel on the main substrate that has formed organic EL and distribution, by powering to the pixel of each panel via special-purpose distribution, the inspection of can lighting a lamp, by the detection of the non-pixel of lighting a lamp and with the rejected region in this pixel of laser ablation, can repair, so even final panel-form is that resin-sealed structure also can repairing pixel defect. In addition, can provide and check that the processing time of revising is short, the success rate height of defect correction because of inspection corrective and the system that realizes that the automated production rate improves, can help to predict the raising of qualification rate and the productivity ratio of the large-scale OLED display that will popularize from now on.

In addition, as mentioned above, in OLED display panel corrective of the present invention, owing to can check out small defective, so success rate height, the automation that can provide pixel to repair are easy and the corrective of the OLED display panel of high productivity, can help to predict the qualification rate of the large-scale OLED display panel that will popularize from now on and the raising of productivity ratio.

Claims (43)

1. the checkout facility of lighting a lamp of an OLED display substrate is characterized in that having:

Lighting unit is checked with the described electrode special pole plate of the main substrate of special-purpose distribution and electrode special pole plate to lighting a lamp of having that each pixel of making organic EL lights a lamp and to be powered, and described each pixel is lit a lamp; And

The defect pixel detecting unit detects defect pixel of not lighting a lamp and position thereof in described each pixel according to the described result of lighting a lamp.

2. the checkout facility of lighting a lamp of OLED display substrate according to claim 1 is characterized in that,

Described electrode special pole plate is located at one side at least of described main substrate.

3. the checkout facility of lighting a lamp of OLED display substrate according to claim 1 is characterized in that,

Described main substrate has at least one panel, and described lighting unit can be that unit powers together to described each pixel at least with the panel.

4. the defect inspection correcting device of an OLED display substrate is characterized in that having:

The checkout facility of lighting a lamp of the described OLED display substrate of claim 1; And

Defect correction equipment, it possess the described defect pixel of optical check foreign matter the position foreign matter position detection unit and to the position irradiating laser of described detected foreign matter, revise the defect correction unit of described defect pixel.

5. the defect inspection correcting device of OLED display substrate according to claim 4 is characterized in that,

Described foreign matter position detection unit is the image of catching defect pixel, compares with the image of normal pixel, detects the defective in the pixel and the unit of position thereof.

6. the defect inspection correcting device of OLED display substrate according to claim 4 is characterized in that having:

The barrier film forming device is formed on together removed barrier film when revising described defect pixel again.

7. the defect inspection correcting device of OLED display substrate according to claim 4 is characterized in that having:

Identifying unit at least to described defect pixel power supply, judges whether pixel lights a lamp after revising described defect pixel.

8. the defect inspection correcting device of OLED display substrate according to claim 4 is characterized in that having:

Low-humidity environment is kept the unit, is low-humidity environment with the described checkout facility of lighting a lamp, described defect correction device control.

9. the defect inspection correcting device of OLED display substrate according to claim 8 is characterized in that,

It is the unit of removing the moisture removal unit of moisture or being maintained nonactive dry gas environment that described low-humidity environment is kept the unit.

10. the defect inspection correcting device of OLED display substrate according to claim 4 is characterized in that,

Described defect correction equipment is placed in described main substrate in the low-humidity environment, makes described laser shine described foreign matter via transparency window.

11. the defect inspection correcting device of OLED display substrate according to claim 4 is characterized in that,

Described defect pixel detecting unit is the state of lighting a lamp after described pixel power supply by picture catching, handles the unit that described image detects described defect pixel,

The described checkout facility of lighting a lamp possesses identifying unit, and it is according to described image, is that unit checks in line defect, inhomogeneous, the pixel and at least a bad in the color fringe to carry out the judgement of non-defective unit defective products with described panel,

Described defect correction equipment is selected the bad described panel that only has described defect pixel, revises described defect pixel.

12. the defect inspection correcting device of OLED display substrate according to claim 4 is characterized in that,

Described defect pixel detecting unit is by the described state of lighting a lamp of picture catching, handles the unit of the described defect pixel of described image detection,

Described main substrate has at least one panel,

Described defect correction equipment, the described defect pixel in described panel are revised the described defect pixel of described panel in the number of regulation the time.

13. the inspection method of lighting a lamp of an OLED display substrate is characterized in that having:

The step of lighting a lamp is checked with the described electrode special pole plate of the main substrate of special-purpose distribution and electrode special pole plate to lighting a lamp of having that each pixel of making organic EL lights a lamp and to be powered, and described each pixel is lit a lamp; And

Defect pixel detects step, detects defect pixel of not lighting a lamp and position thereof in described each pixel according to the described result of lighting a lamp.

14. the inspection method of lighting a lamp of OLED display substrate according to claim 13 is characterized in that,

Described main substrate has at least one panel, and the described step of lighting a lamp can be that unit powers together to described pixel at least with the panel.

15. the defect inspection modification method of an OLED display substrate is characterized in that,

Except the step that the inspection method of lighting a lamp of the described OLED display substrate of claim 13 has, also have:

The foreign matter position probing step of the position of the foreign matter of the described defect pixel of optical detection; And

To the position irradiating laser of described detected foreign matter, revise the defect correction step of described defect pixel.

16. the defect inspection modification method of OLED display substrate according to claim 15 is characterized in that,

Described foreign matter position probing step is the image of catching defect pixel, compares with the image of normal pixel, detects the defective in the pixel and the step of position thereof.

17. the defect inspection modification method of OLED display substrate according to claim 15 is characterized in that having:

Barrier film forms step, is formed on together removed barrier film when revising described defect pixel again.

18. the defect inspection modification method of OLED display substrate according to claim 15 is characterized in that having:

Determination step at least to described defect pixel power supply, judges whether described defect pixel lights a lamp after revising described defect pixel.

19. the defect inspection modification method of OLED display substrate according to claim 15 is characterized in that,

Described defect pixel detects the state that step is lit a lamp after described pixel power supply by picture catching,

The described inspection method of lighting a lamp possesses determination step, according to described image, is that the unit is checked in line defect, inhomogeneous, the pixel and at least a bad in the color fringe to be carried out the judgement of non-defective unit defective products with described panel,

Described defect correction step is selected the bad described panel that only has described defect pixel, revises described defect pixel.

20. an OLED display manufacturing system is characterized in that having:

The film forming group possesses the organic EL film forming device that makes organic EL form material filming on main substrate;

Light a lamp and check the correction group, it is arranged on the back level of described film forming group, possess the pixel that makes described main substrate and light a lamp and check the checkout facility and of lighting a lamp of the state-detection defect pixel of lighting a lamp, revise the defect correction equipment of described defect pixel according to the check result of the described checkout facility of lighting a lamp;

Seal group, it is arranged on described lighting a lamp and checks the back level of correction group, has the water-tight equipment that the one side of described main substrate is sealed with cover glass;

The 1st handing-over equipment, it is arranged on described film forming group and described lighting a lamp checked between the correction group, carries out the handing-over of described main substrate;

The 2nd handing-over equipment, it is arranged on described lighting a lamp and checks between correction group and the described seal group, carries out the handing-over of described main substrate; And

The substrate conveying equipment is carried described main substrate.

21. OLED display manufacturing system according to claim 20 is characterized in that,

Described lighting a lamp checks that the correction group has the checkout facility of lighting a lamp of any described OLED display substrate of claim 1 to 3.

22. OLED display manufacturing system according to claim 20 is characterized in that,

Described lighting a lamp checks that the correction group has the defect inspection correcting device of any described OLED display substrate of claim 4 to 12.

23. OLED display manufacturing system according to claim 20, it is characterized in that, be provided with all low-humidity environments and keep the unit, check the correction group except described lighting a lamp, also described seal group, described the 1st handing-over equipment, described the 2nd handing-over equipment and described substrate conveying equipment are controlled to be low-humidity environment.

24. OLED display manufacturing system according to claim 20, it is characterized in that, have the underlying TFT pattern estimated on the main substrate and the pattern deviation between the organic light emission layer pattern, this pattern deviation is fed back to the unit of the pattern of pixels position contraposition of described organic EL film forming device as bias.

25. OLED display manufacturing system according to claim 20 is characterized in that,

Described lighting a lamp checks that the correction group has the low-humidity environment that is controlled to be low-humidity environment and keeps the unit, and described the 1st handing-over equipment has the environment switch unit that switches to low-humidity environment from vacuum environment.

26. an OLED display manufacture method is characterized in that having:

The film forming step makes organic EL form material filming on main substrate;

The step of lighting a lamp lights a lamp described each pixel to each pixel power supply of described main substrate;

Defect pixel detects step, detects defect pixel and the position thereof that does not light a lamp in described each pixel according to the described result of lighting a lamp;

The defect correction step detects the foreign matter in the described defect pixel and revises described defect pixel; And

The sealing step, after revising described defective with a face seal of described main substrate.

27. OLED display manufacture method according to claim 26 is characterized in that,

Carry out described power supply via the inspection of lighting a lamp that on described main substrate, is provided with special-purpose distribution and electrode special pole plate.

28. OLED display manufacture method according to claim 26 is characterized in that,

Have the underlying TFT pattern estimated on the main substrate and the pattern deviation between the organic light emission layer pattern, this pattern deviation is fed back to the step of the pattern of pixels position contraposition of described organic EL film forming device as bias.

29. an OLED display panel corrective, its defective irradiating laser to the described pixel on the main substrate that has formed pixel by organic EL is revised this defective, it is characterized in that having:

LASER Illuminator System according to the positional information and the size of described defective, via having the photomask that makes the printing opacity pattern that described laser sees through, is shone the position of described defective.

30. OLED display panel corrective according to claim 29 is characterized in that having:

Observing system compares the image of the non-bad pixel of lighting a lamp and the image of normal pixel, detects the position and the size of the described defective in the non-bad pixel of lighting a lamp.

31. OLED display panel corrective according to claim 29 is characterized in that,

Described printing opacity pattern surrounds around the described defective, can remove the pattern on every side of described defective bandedly.

32. OLED display panel corrective according to claim 29 is characterized in that,

Described printing opacity pattern is the printing opacity pattern of diameter greater than described defective.

33. according to claim 31 or 32 described OLED display panel correctives, it is characterized in that,

Have the described photomask that possesses a plurality of described printing opacity patterns that vary in size, and have the selected cell of selecting described printing opacity pattern with the size of described defective matchingly.

34. according to claim 31 or 32 described OLED display panel correctives, it is characterized in that,

Have a plurality of described photomasks that changed the size of described printing opacity pattern, and have the selected cell of selecting described photomask with the size of described defective matchingly.

35. any described OLED display panel corrective according to claim 29 to 32 is characterized in that,

Possess structure, have the objective table and described LASER Illuminator System and the described observing system that keep described main substrate in this structure inside,

And have a control module, be low humidity by moisture removal mechanism or nonactive dry gas with the internal control of described tectosome.

36. any described OLED display panel corrective according to claim 29 to 32 is characterized in that,

Possess structure, lay the objective table that keeps described main substrate in this structure inside,

The laser oscillator that shines described laser is located at outside the described structure, shines described laser via the penetrating window that is located on the described structure.

37. OLED display panel corrective according to claim 30 is characterized in that,

Possess structure, lay the objective table that keeps described main substrate in this structure inside,

Described observing system is located at outside the described structure, detects the position and the size of described defective via being located at penetrating window on the described structure.

38. an OLED display panel modification method is revised this defective to the defective irradiating laser of the described pixel on the main substrate that has formed pixel by organic EL, it is characterized in that,

According to the positional information and the size of described defective, make the photomask of the printing opacity pattern that described laser sees through shine the position of described defective via having.

39. according to the described OLED display panel of claim 38 modification method, it is characterized in that,

The image of the non-bad pixel of lighting a lamp and the image of normal pixel are compared, detect the position and the size of the described defective in the non-bad pixel of lighting a lamp.

40. according to the described OLED display panel of claim 38 modification method, it is characterized in that,

Described printing opacity pattern surrounds around the described defective, can remove the pattern on every side of described defective bandedly.

41. according to the described OLED display panel of claim 38 modification method, it is characterized in that,

Described printing opacity pattern is the printing opacity pattern of diameter greater than described defective.

42. according to claim 40 or 41 described OLED display panel modification methods, it is characterized in that,

Described photomask has a plurality of described printing opacity patterns that change size, selects described printing opacity pattern matchingly with the size of described defective.

43. according to claim 40 or 41 described OLED display panel modification methods, it is characterized in that,

Have a plurality of described photomasks, described photomask has each described printing opacity pattern that varies in size, and selects described photomask matchingly with the size of described defective.

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