CN102165542B - Thin film MIM capacitors and manufacturing method therefor - Google Patents

Thin film MIM capacitors and manufacturing method therefor Download PDF

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Publication number
CN102165542B
CN102165542B CN200980137877.2A CN200980137877A CN102165542B CN 102165542 B CN102165542 B CN 102165542B CN 200980137877 A CN200980137877 A CN 200980137877A CN 102165542 B CN102165542 B CN 102165542B
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film
base metal
mim capacitor
lower electrode
upper electrode
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CN102165542A (en
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高桥智之
森户健太郎
笹岛裕一
武宜成
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Taiyo Yuden Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H01L27/016—Thin-film circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/224—Housing; Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer

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  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Ceramic Capacitors (AREA)

Abstract

Proposed are thin film MIM capacitors with which deterioration of insulating properties and leakage current properties can be sufficiently prevented. Also proposed is a manufacturing method for the thin film MIM capacitors. For the thin film MIM capacitor (1), a lower electrode (3), a base metal thin film (4), a dielectric thin film (5) and an upper electrode (6) are laminated in this order on a substrate (2). The base metal thin film (4), the dielectric thin film (5) and the upper electrode (6) are formed to approximately the same area. The lower electrode (3) has a configuration that differs from the other thin films to form a part for external connection. The side surfaces of the base metal thin film (4), the dielectric thin film (5) and the upper electrode (6) are covered with a base metal oxide (7) the comprises the same metal atoms as the base metal thin film (4).

Description

Film MIM capacitor and manufacture method thereof
Technical field
The present invention relates to film MIM (Metal-Insulator-Metal: metal-insulator-metal type) capacitor and manufacture method thereof.
Background technology
In recent years, the miniaturization of e-machine progressively develops, and the miniaturization of the circuit blocks such as capacitor that these e-machines are used is progressively development also.As meeting one of electronic unit of this miniaturization requirement, have, take the thin film electronic parts that film MIM capacitor is representative.Film MIM capacitor 31 shown in Figure 18 obtains by utilizing the film forming technologies such as sputtering method, vapour deposition method, CVD method or sol-gal process to form lower electrode 33, thin dielectric film 35 and upper electrode 36 on insulating properties substrate 32.Because the capacitor obtaining is the structure of metal (lower electrode)-insulator (thin dielectric film)-metal (upper electrode), so be called as film MIM capacitor.Because this film MIM capacitor 31 easily forms thickness, be the dielectric layer below 1 μ m, so can access high static capacity.
Film MIM capacitor 31, utilizes photoetching technique, by methods such as dry ecthings, is processed into desired shape.Because upper electrode 36 and lower electrode 33 expose in the side of the capacitor part of finished film MIM capacitor, so, in this state, upper electrode 36 and the easy short circuit of lower electrode 33.Therefore, the common whole insulated body 39 of film MIM capacitor 31 covers.This insulator 39 similarly forms by film forming technology with film MIM capacitor 31.The film MIM capacitor that insulated body 39 covers, by the conductor introduction 40 and 40 that connects this insulator 39 and be connected with lower electrode 33 with upper electrode 36 ' taking-up static capacity.This conductor introduction 40 and 40 ' form by methods such as plating.
But the hydrogen due to forming this insulator 39 and conductor introduction 40, the generation of 40 ' time, causes the insulation characterisitic of film MIM capacitor 31 and leakage current characteristic deteriorated sometimes.Therefore, film MIM capacitor 31 is coated with insulating properties hydrogen separator 38.This insulating properties hydrogen separator 38 is by Al 2o 3, TiO 2, Ta 2o 5, SiN etc. film form.
Patent documentation 1: TOHKEMY 2006-190716 communique
Summary of the invention
The problem that invention will solve
Insulating properties hydrogen separator 38 is by formation such as sputtering methods.But, exist the thickness t 2 of insulating properties hydrogen separator of side of the capacitor part be formed on film MIM capacitor 31 than the thin tendency of thickness t 1 that is formed on the insulating properties hydrogen separator of other parts.Therefore, can not give full play to hydrogen isolation performance, can not fully obtain and prevent insulation characterisitic and the deteriorated effect of leakage current characteristic.
The present invention is in order to solve problem as described above, proposed a kind ofly can fully obtain the film MIM capacitor that prevents insulation characterisitic and the deteriorated effect of leakage current characteristic, and proposed to manufacture the method for this film MIM capacitor.
For solving the means of problem
The first solution of the present invention provides a kind of film MIM capacitor, it has substrate, be formed on lower electrode on this substrate, be formed on the dielectric layer film on this lower electrode and be formed on the upper electrode on this thin dielectric film, between above-mentioned lower electrode and above-mentioned thin dielectric film, be formed with base metal film or base metal oxide film, the side of above-mentioned thin dielectric film and above-mentioned upper electrode is covered by the oxide of the insulating properties that contains the metallic atom same with the Metal Phase that forms above-mentioned base metal film or above-mentioned base metal oxide film.
The film MIM capacitor of above-mentioned the first solution, because side is covered by the base metal oxide as insulator, so can coordinate to guarantee with formation insulating properties hydrogen separator thereon the thickness of enough insulators.Thus, can fully obtain and prevent insulation characterisitic and the deteriorated effect of leakage current characteristic.
In addition, the base metal oxide of the side of film MIM capacitor contains the metallic atom same with forming the base metal film of film MIM capacitor or the Metal Phase of base metal oxide film.Therefore, the adaptation of the side of the base metal oxide of the side of film MIM capacitor and film MIM capacitor is good.
In addition, the second solution of the present invention has proposed a kind of except above-mentioned the first solution, and the metal that forms above-mentioned base metal film or above-mentioned base metal oxide film is the film MIM capacitor of Al, Ti or Ta.Al 2o 3, TiO 2, Ta 2o 5there is good hydrogen isolation performance.Adopt above-mentioned the second solution, because the base metal oxide of the side of film MIM capacitor is Al 2o 3, TiO 2, Ta 2o 5so, the thickness thickening of the insulating properties hydrogen separator of the side of film MIM capacitor.Thus, can obtain more further and prevent insulation characterisitic and the deteriorated effect of leakage current characteristic.
In addition, in above-mentioned the first solution, can form above-mentioned lower electrode by base metal film.In this case, due to the base metal oxide of the side of film MIM capacitor contain with the Metal Phase that forms lower electrode with metal, so the adaptation of the side of the base metal oxide of the side of film MIM capacitor and film MIM capacitor is better.
In addition, the 3rd solution of the present invention provides a kind of manufacture method of film MIM capacitor, the film MIM capacitor proposing for the manufacture of above-mentioned the first solution, this manufacture method comprises: on substrate, form successively metal film as lower electrode, base metal film, thin dielectric film and as the step of the metal film of upper electrode; By dry ecthing, above-mentioned base metal film, above-mentioned thin dielectric film and above-mentioned metal film as upper electrode are processed in the lump, and made the etchant of above-mentioned base metal film be attached to again the step of the side of above-mentioned base metal film, above-mentioned thin dielectric film and above-mentioned upper electrode; Only to above-mentioned etchant or above-mentioned etchant and above-mentioned base metal film are carried out to the step of oxidation processes.
Adopt above-mentioned the 3rd solution, can in dry ecthing, form the base metal oxide of the side of cover film MIM capacitor.Therefore, there is no need to redesign the technique that forms insulator for the side in film MIM capacitor, can improve by simple method insulation characterisitic and the leakage current characteristic of the side of film MIM capacitor.
Invention effect
Adopt the present invention, can obtain fully obtaining the film MIM capacitor that prevents insulation characterisitic and the deteriorated effect of leakage current characteristic.
Accompanying drawing explanation
Fig. 1 means the schematic section of the first execution mode of film MIM capacitor of the present invention.
Fig. 2 means the schematic section of the manufacturing process of film MIM capacitor of the present invention.
Fig. 3 means the schematic section of the manufacturing process of film MIM capacitor of the present invention.
Fig. 4 means the schematic section of the manufacturing process of film MIM capacitor of the present invention.
Fig. 5 means the schematic section of the manufacturing process of film MIM capacitor of the present invention.
Fig. 6 means the schematic section of the manufacturing process of film MIM capacitor of the present invention.
Fig. 7 means the schematic section of the manufacturing process of film MIM capacitor of the present invention.
Fig. 8 means the schematic section of the manufacturing process of film MIM capacitor of the present invention.
Fig. 9 means the schematic section of the manufacturing process of film MIM capacitor of the present invention.
Figure 10 means the schematic section of the manufacturing process of film MIM capacitor of the present invention.
Figure 11 means the schematic section of the manufacturing process of film MIM capacitor of the present invention.
Figure 12 means the schematic section of the manufacturing process of film MIM capacitor of the present invention.
Figure 13 means the schematic section of variation of the first execution mode of film MIM capacitor of the present invention.
Figure 14 means the schematic section of the second execution mode of film MIM capacitor of the present invention.
Figure 15 means the schematic section of manufacturing process of the second execution mode of film MIM capacitor of the present invention.
Figure 16 means the schematic section of manufacturing process of the second execution mode of film MIM capacitor of the present invention.
Figure 17 means the schematic section of manufacturing process of the second execution mode of film MIM capacitor of the present invention.
Figure 18 means the schematic section of existing film MIM capacitor.
Embodiment
Based on accompanying drawing, for the first execution mode of film MIM capacitor of the present invention, describe.Fig. 1 means the schematic section of the first execution mode of film MIM capacitor of the present invention.
Film MIM capacitor 1 has stacked gradually lower electrode 3, base metal film 4, thin dielectric film 5 and upper electrode 6 on substrate 2.Base metal film 4, thin dielectric film 5 and upper electrode 6 form roughly the same area, and lower electrode 3 is in order to form the part being connected with outside, so its shape is different from other film.The side of base metal film 4, thin dielectric film 5 and upper electrode 6 is covered by base metal oxide 7.Lower electrode 3, base metal film 4, thin dielectric film 5, upper electrode 6 and base metal oxide 7 are covered by insulating properties hydrogen separator 8, further by insulator 9, are covered.Upper electrode 6 is connected with outside by conductor introduction 10, and lower electrode 3 passes through conductor introduction 10 ' be connected with outside.Wherein, in the situation that substrate 2 is Si substrate, in order to ensure insulating properties, between substrate 2 and lower electrode 3, be formed with SiO 2layer 2 '.
As substrate 2, except above-mentioned Si substrate, be also applicable to use the insulating properties substrate of aluminum oxide substrate etc.The in the situation that of Si substrate, although form as mentioned above SiO 2layer 2 ', but the in the situation that of that insulating properties substrate of aluminum oxide substrate, not special needs.In addition, in the following description, for the individual components for single-piece describes film MIM capacitor 1, substrate 2 represents with the size of parts.In fact, the form that substrate 2 can assembly substrate is prepared, and makes it possible to cut off and cut apart once manufacturing a plurality of individual components after, or also can be used as the part preparation of the substrate of multilager base plate or semiconductor device.
Lower electrode 3 and upper electrode 6, except the noble metals such as Pt, Pd, Au, be also applicable to using RuO 2and IrO 2deng electroconductive oxide.Lower electrode 3 and upper electrode 6 both can be used identical material, also can use different materials.Lower electrode 3, in order to form the part being connected with outside, carries out respectively etching and processing with upper electrode 6.Utilize above-mentioned situation, also can make the metallic film as lower electrode 3 is etch stop layer when base metal film 4, thin dielectric film 5 and upper film 6 are carried out to etching and processing in the lump.
Base metal film 4 can be used the base metal by oxidation with insulating properties, is applicable to using Al, Ti, Ta.Base metal film 4 is in this as the part performance function of lower electrode.Base metal film 4 contains the metallic atom identical with the base metal oxide 7 that the side of base metal film 4, thin dielectric film 5 and upper film 6 is covered.Therefore, good with the adaptation of base metal oxide 7.So base metal film 4 can make the base metal oxide 7 closely sealed side at base metal film 4, thin dielectric film 5 and upper electrode 6 more securely.
Thin dielectric film 5 is by barium titanate (BaTiO 3: be slightly designated as below BT), strontium titanates (SrTiO 3: be slightly designated as below ST), barium strontium (BaSrTiO 3: be slightly designated as below BST) etc. dielectric substance form.Be particularly suitable for using BST.The thickness of thin dielectric film 5 is thinner, and the static capacity of film MIM capacitor 1 is larger.The thickness of thin dielectric film 5 forms nanometer (nm) level below 1 μ m.
Base metal oxide 7 covers the side of base metal film 4, thin dielectric film 5 and upper electrode 6 in the above described manner.By this base metal oxide 7, can guarantee the insulating properties of film MIM capacitor 1.This base metal oxide 7 contains the metallic atom identical with base metal film 4.Therefore, closely sealed more firmly with base metal film 4, and the closely sealed side to thin dielectric film 5 and upper electrode 6 more firmly.In addition, if form the metallic atom of base metal oxide 7, be Al, Ti, Ta, there is the effect as insulating properties hydrogen separator.Thus, can make to be formed on the thickness thickening of insulating properties hydrogen separator of the side of base metal film 4, thin dielectric film 5 and upper electrode 6.
Insulating properties hydrogen separator 8 has following effects: when making the hydrogen producing and film MIM capacitor 1 being installed to electronic circuit in the formation operation of insulator 9 of subsequent handling and the formation operation of conductor introduction or the hydrogen producing after installing do not invade lower electrode 3, thin dielectric film 5 and upper electrode 6.Insulating properties hydrogen separator 8 is by Al 2o 3, TiO 2, Ta 2o 5, the material such as SiN forms.
Insulating barrier 9 forms to cover the mode of insulating properties hydrogen separator 8 as required.As the material of insulating properties layer 8, be applicable to using Al 2o 3, SiO 2deng.In addition, conductor introduction 10 is connected with upper electrode 6 by via, conductor introduction 10 ' be connected with lower electrode 3 by via.Conductor introduction 10 and 10 ' applicable higher Cu of conductivity that uses.
Then, the manufacturing process for film MIM capacitor describes.Wherein, create conditions etc. and to be not limited to the record content of following explanation, can carry out various changes within the scope of the invention.
First, as shown in Figure 2, prepared substrate 2.At this, substrate 2 is Si substrates.On substrate 2, be formed with SiO 2layer 2 '.Because the insulating properties of Si substrate is lower, therefore in order to make insulating properties good, form SiO 2layer 2 '.Can be pre-formed SiO by preparation 2layer 2 ' Si substrate or by Si substrate surface being carried out to oxidation processes, form SiO 2layer 2 ' prepare such substrate 2.
Then, as shown in Figure 3, at the SiO of substrate 2 2layer 2 ' whole on form successively metallic film as lower electrode 3, base metal film 4, thin dielectric film 5 and as the metallic film of upper electrode 6.As formation method, can use the film forming technologies such as existing sputtering method, vapour deposition method, CVD method or sol-gal process.
Then, as shown in Figure 4, utilize photoresist to carry out patterning.As photoresist, can use any as the residual negative-type of pattern of the dissolved positive type of removing of part of exposure or the part of exposure.Whole that photoresist is coated in as the metallic film of upper electrode 6 is upper, exposes and develops.Then, heat-treat with 100 ℃, form the resist film RG1 of patterning.Then, the substrate that is formed with this resist film RG1 is put into the chamber of device for dry etching.Conventionally, by the Temperature Setting in chamber more than 200 ℃, so that the particle of the film of removing by etching, be that etchant can not be attached to the side of film MIM capacitor again.But, in the present invention without so, so the temperature in chamber is normal temperature.
Then, carry out dry ecthing, form the state shown in Fig. 5.As the method for dry ecthing, be applicable to using reactive ion-etching (Reactive-Ion-Etching: be slightly designated as below RIE).By RIE, the metallic film as upper electrode 6, thin dielectric film 5 and base metal film 4 are carried out to etching in the lump.Now, etchant 4 ' the be attached to side forming by etching.The product that the particle of the base metal film 4 that this etchant 4 ' be is removed by etching adheres to again.In common film MIM capacitor, side is processed as to inclined-plane, so that etchant does not occur to adhere to again.But feature of the present invention is expressly to make this etchant to adhere to again, so do not need side to be processed as inclined-plane.In addition, as the method for RIE, use ICP (Inductively-Coupled-Plazma: the inductively coupled plasma) device of type.
Then, as shown in Figure 6, resist film RG1 is removed, to etchant 4 ' carry out oxidation processes, form base metal oxide 7.Except removing by liquid the method for resist film RG1, also have by being exposed to and in oxygen plasma, carry out the method that ashing processing is removed.In the ashing that utilizes oxygen plasma is processed, can carry out simultaneously etchant 4 ' oxidation processes.Utilize the ashing of oxygen plasma to process, use the cineration device of cylinder type, for example, under the condition of oxygen=100sccm, substrate bias power 240W, pressure 100Pa, carry out.In the situation that utilizing liquid to remove resist film RG1, by annealing to etchant 4 ' carry out oxidation processes.For example, in atmosphere or in oxygen atmosphere, with 600 ℃ of conditions, carry out the annealing of 30 minutes.
Then, as shown in Figure 7, by resist film RG2, cover base metal film 4, thin dielectric film 5, upper electrode 6 and base metal oxide 7, lower electrode 3 is carried out to patterning.The method of patterning is identical with the situation of above-mentioned resist film RG1.Then, carry out RIE, as shown in Figure 8, the part metallic film as lower electrode 3, that do not covered by resist film RG2 is removed.Then, as shown in Figure 9, remove resist film RG2, form lower electrode 3.The method of removing resist film RG2 is identical with the situation of above-mentioned resist film RG1.
In addition, etchant 4 ' oxidation processes can be after removing resist film RG2 or with remove resist film RG2 and carry out simultaneously.That is, utilize liquid to remove resist film RG1, afterwards, do not carry out etchant 4 ' oxidation processes, form resist film RG2, carry out the patterning of lower electrode 3.Then, after removing resist film RG2 or with remove resist film RG2 carry out simultaneously etchant 4 ' oxidation processes, form base metal oxide 7.
Then, as shown in figure 10, form insulating properties hydrogen separator 8.Insulating properties hydrogen separator 8 can form by existing film forming technology.At this, in the side of base metal film 4, thin dielectric film 5 and upper electrode 6, the thin thickness of the insulating properties hydrogen separator 8 of other parts of Thickness Ratio of insulating properties hydrogen separator 8.But, owing to there being base metal oxide 7, can prevent the reduction of insulating properties.In addition, if base metal oxide 7 is the oxide of Al, Ti, Ta, also can prevent the reduction of hydrogen isolation performance.
Then, as shown in figure 11, form insulator 9, the integral body of covering capacitor part.Insulator 9 can form by existing film forming technology.Then, as shown in figure 12, form the via VH that arrives upper electrode 6 and the via VH ' that arrives lower electrode 3.Via VH and VH ' can form by dry ecthing.Then, by electroless plating Cu, on the whole surface that comprises the insulator 9 of via VH and VH ', form Cu film, form Seed Layer (not shown).Then, electroplate Cu, Cu is separated out in Seed Layer.Then, by cmp (Chemical Mechanical Polishing:CMP) etc., the unnecessary Cu beyond the Cu being filled in via VH and VH ' is removed, form conductor introduction 10 and 10 '.Like this, obtain the film MIM capacitor 1 shown in Fig. 1.
In addition, the variation as the first execution mode of film MIM capacitor of the present invention, has the film MIM capacitor 11 shown in Figure 13.Be with the difference of the film MIM capacitor 1 shown in Fig. 1, form base metal oxide film 14 and replace base metal film 4.This base metal oxide film 14 by etchant 4 ' oxidation processes time in the base metal film 4 of the film MIM capacitor 1 shown in Fig. 1 is oxidized or the method that starts to form base metal oxide film etc. during from initial formation film forms.When from formation film, start to form the method for base metal oxide film, when forming base metal oxide 17, do not need to carry out oxidation processes.
Below, the second execution mode of film MIM capacitor of the present invention is described.The lower electrode 24 of the film MIM capacitor 21 shown in Figure 14 is formed by base metal film, and this point is different from the film MIM capacitor 1 shown in Fig. 1.
Such film MIM capacitor 21 obtains in the following way.First, will in the manufacturing process of the first execution mode, from the technique of lower electrode formation upper electrode, change to the appearance shown in Figure 15.That is,, by existing thin-film technique, on substrate 22, form successively base metal film as lower electrode 24, thin dielectric film 25 and as the metallic film of upper electrode 26.
Then, as shown in figure 16, form resist film RG21, carry out patterning.The method of patterning is identical with the technique of above-mentioned the first execution mode.Then, as shown in figure 17, by RIE, to the metallic film as upper electrode 26, thin dielectric film 25 with as a part for the base metal film of lower electrode 24, carry out in the lump etching and processing.Now, as the part of the base metal film of lower electrode 24, be removed the etchant 24 of generation ' be attached to the again side of thin dielectric film 25 and upper electrode 26.By to this etchant 24 ' carry out oxidation processes, form base metal oxide 27.
Above, for embodiments of the present invention, be illustrated, but the present invention is not limited to above-mentioned execution mode, can carries out various changes within the scope of the invention.
Symbol description
1,11,21,31 film MIM capacitor
2,12,22,32 substrates
2a, 12a, 22a, 32a SiO 2layer
3,13,33 lower electrodes
4 base metal films
4 ' etchant
5,15,25,35 thin dielectric films
6,16,26,36 upper electrodes
7,17,27 base metal oxides
8,18,28,38 insulating properties hydrogen separators
9,19,29,39 insulators
10,10 ', 20,20 ', 30,30 ', 40,40 ' conductor introduction
14 base metal oxide films
24 lower electrodes (base metal film)

Claims (5)

1. a film MIM capacitor, it has substrate, be formed on lower electrode on this substrate, be formed on the dielectric layer film on this lower electrode and be formed on the metal film as upper electrode on this thin dielectric film, and this film MIM capacitor is characterised in that:
Between described lower electrode and described thin dielectric film, be formed with the base metal oxide film of base metal film or insulating properties,
The side of described thin dielectric film and described upper electrode is covered by the base metal oxide of the insulating properties that contains the metallic atom same with the Metal Phase that forms described base metal film or described base metal oxide film,
The base metal oxide film of described lower electrode, described base metal film or described insulating properties, described thin dielectric film, described upper electrode and described base metal oxide are covered by insulating properties hydrogen separator.
2. film MIM capacitor as claimed in claim 1, is characterized in that:
The metal that forms described base metal film or described base metal oxide film is Al, Ti or Ta.
3. a film MIM capacitor, it has substrate, be formed on lower electrode on this substrate, be formed on the dielectric layer film on this lower electrode and be formed on the metal film as upper electrode on this thin dielectric film, and this film MIM capacitor is characterised in that:
Described lower electrode is formed by base metal film,
The side of described thin dielectric film and described upper electrode is covered by the oxide of the insulating properties that contains the metallic atom same with the Metal Phase that forms described lower electrode.
4. the manufacture method of a film MIM capacitor, this film MIM capacitor has substrate, be formed on lower electrode on this substrate, be formed on the dielectric layer film on this lower electrode and be formed on the upper electrode on this thin dielectric film, this manufacture method is characterised in that, comprising:
On substrate, form successively metal film as lower electrode, base metal film, thin dielectric film and as the step of the metal film of upper electrode;
By dry ecthing, described base metal film, described thin dielectric film and described metal film as upper electrode are processed in the lump, and made the etchant of described base metal film be attached to again the step of the side of described base metal film, described thin dielectric film and described upper electrode; With
Only to described etchant or described etchant and described base metal film are carried out to the step of oxidation processes.
5. the manufacture method of a film MIM capacitor, this film MIM capacitor has substrate, be formed on lower electrode on this substrate, be formed on the dielectric layer film on this lower electrode and be formed on the upper electrode on this thin dielectric film, this manufacture method is characterised in that, comprising:
On substrate, form successively base metal film as lower electrode, thin dielectric film and as the step of the metal film of upper electrode;
By dry ecthing, a part for described base metal film, described thin dielectric film and described metal film as upper electrode are processed in the lump, and make the etchant of described base metal film be attached to again the step of the side of described thin dielectric film and described upper electrode; With
Only described etchant is carried out the step of oxidation processes.
CN200980137877.2A 2008-10-28 2009-10-26 Thin film MIM capacitors and manufacturing method therefor Expired - Fee Related CN102165542B (en)

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PCT/JP2009/068738 WO2010050606A1 (en) 2008-10-28 2009-10-26 Thin film mim capacitors and manufacturing method therefor

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