CN102150240B - Adhesive film for wafer support for processing wafer of semiconductor thin film - Google Patents

Adhesive film for wafer support for processing wafer of semiconductor thin film Download PDF

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Publication number
CN102150240B
CN102150240B CN2009801189925A CN200980118992A CN102150240B CN 102150240 B CN102150240 B CN 102150240B CN 2009801189925 A CN2009801189925 A CN 2009801189925A CN 200980118992 A CN200980118992 A CN 200980118992A CN 102150240 B CN102150240 B CN 102150240B
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wafer
film
thin film
heat
resistant
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CN102150240A (en
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朴允敏
全海尚
文基祯
沈昌勋
崔城焕
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Toray Advanced Materials Korea Inc
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Toray Advanced Materials Korea Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The present invention relates to an adhesive film for a wafer support for processing a wafer of a semiconductor thin film. More particularly, the present invention relates to an adhesive film for a wafer support for processing a wafer of a semiconductor thin film which eliminates the necessity of an attachment apparatus in a film-thinning process for a semiconductor wafer, can be used regardless of the semiconductor wafer size, prevents the ingress of grinding water by coating an acrylic adhesive layer onto a heat resistant base, and leaves no adhesive layer on a circuit surface during a delamination process and thus eliminates the necessity of an additional cleaning process, thereby preventing damage to the semiconductor wafer and the contamination of the circuit surface which might occur during a complicated process. To this end, the adhesive film for a wafer support for processing a wafer of a semiconductor thin film according to the present invention comprises a heat-resistant base and a heat-resistant adhesive layer coated on the heat-resistant base, wherein said heat-resistant adhesive layer comprises an acrylic copolymer having a molecular weight of 500,000 to 3,000,000, an energy ray-curable acrylic oligomer, and a photoinitiator.

Description

The wafer support bonding film that is used for the processing semiconductor thin film wafers
Technical field
Relate generally to of the present invention is for the manufacture of the wafer support bonding film of semiconductive thin film wafer, more particularly, the present invention relates to the wafer support bonding film for the manufacture of the semiconductive thin film wafer, described semiconductive thin film wafer does not need independent bonder during the film reduction process of semiconductor wafer, described wafer support bonding film is not subjected to any restriction of semiconductor wafer sizes, it is by preventing the grinding water infiltration at resistant substrates coating acrylic adhesives layer, the washing process that it can not stay any adhesive phase and therefore not need to add during peeling off at circuit surface, thus prevented the pollution of during the technology of the complexity damage in the contingent semiconductor wafer and circuit surface.
Background technology
Because need make IC-card or mobile phone thinner, littler and lighter now, so for the semiconductor chip that will insert, must use thinner semiconductor chip, in order to meet such requirement.Therefore, though be about 75 μ m-150 μ m at present as the thickness of the wafer on semiconductor chip basis, for chip of future generation, thickness must be reduced to 25 μ m-50 μ m.
During the film reduction process of the semiconductor wafer that uses grinder etc., there is the method that forms face side with the circuit of plate support semiconductor thin film wafers.For example, in Japan patent applicant announce 2003-00402214 and 2004-00292089 (being called " prior art " hereinafter), this method has been proposed.
Fig. 1 has illustrated the prior art film reduction process of semiconductor wafer, shows the film reduction process of the wafer that uses plate.
At first, binder solution is coated on circuit (element) the formation surface (surface A) of semiconductor wafer (W).For example, spinner is used for this solution of coating.Then, described binder solution is carried out predrying reducing its flowability, thereby make it possible to keep the shape as adhesive phase (1).Baking oven is used for the predrying of described solution, and under 80 ℃, described binder solution was heated for example 5 minutes.By the burr of the circuit that forms on the surface of described semiconductor wafer (W) (surface A) and the thickness that groove is determined adhesive phase (1).In addition, if the thickness that utilizes the once coating of binder solution not obtain to expect so just will be coated with and predrying repeated several times.In this case, during the predrying technology of the adhesive phase except top layer, degree of drying needs higher, in order to do not stay any fluid bed in adhesive.
Supporting bracket (2) is bonded to semiconductor wafer (W), as mentioned above, has the adhesive phase (1) of predetermined thickness at described semiconductor wafer (W).During this technology, need independent bonder.For described bonder, disposed a pair of power-on and power-off hot plate and a pair of vacuum port up and down be installed in described electric hot plate outside, thereby in reduced atmosphere between the power-on and power-off hot plate laminated material to semiconductor wafer and supporting bracket push.
Then, turn over to use grinder (10) that the back side (surperficial B) of semiconductor wafer (W) is ground the semiconductor wafer (W) of combination and the laminated material of supporting bracket (2), thus the described semiconductor wafer of attenuate (W).After grinding is finished, carry out reprocessing such as etching, plating, plasma etc. as required at the back side of described semiconductor wafer (W), and the corresponding back side is fixed on the cutting belt (11).Described cutting belt (11) has adhesiveness and is maintained on the framework (12).
Then, pour into can dissolved adhesive layer (1) solvent.Described solvent dissolves described adhesive phase (1) by the through hole in the supporting bracket.
When as mentioned above adhesive phase (1) being dissolved, rotating frame (12) is to remove the residual solvent on supporting bracket (2).Subsequently, the magnet (15) that will be installed in arm (14) front end move to described supporting bracket (2) around, thereby utilize magnetic force to attract supporting bracket (2).Thereafter, sideling with described arm (14) pull-up gradually described supporting bracket (2) and parts on every side being separated, thereby obtain thin film semiconductor's wafer.
According to prior art, except being coated on adhesive on the semiconductor wafer, it also is essential using the adhesion technique of bonder, the adhesion technique of use electric hot plate may cause the damage on the semiconductor wafer very much, and may damage described semiconductor wafer by the back pressure that the heat that is derived from electric hot plate causes the laminated material expansion.By using independent bonder, have the restriction to semiconductor wafer sizes, and supplementary equipment therefore is essential.In addition, if pressure is inhomogeneous, but grinding water porous and cause pollution in the circuit surface during the grinding of semiconductor wafer then.And semiconductor wafer and wafer supporting plate can be separated from each other, thereby cause the damage in the wafer.In addition, during grinding technics, wafer supporting plate is too hard, to such an extent as to it can not alleviate grinding stress, thereby causes the damage in the semiconductor wafer.
In addition, according to prior art, after polishing semiconductor wafer is finished, between the separation period of wafer supporting plate and semiconductor wafer, use solvent with dissolved adhesive.And before described solvent is dissolved in adhesive phase between described semiconductor wafer circuit surface and the described wafer supporting plate fully, separate, thereby stay the residue of adhesive phase at described semiconductor wafer circuit surface.In order to dissolve this residue of described adhesive phase, additional technology is essential.And, use the solvent wash circuit surface may cause the pollution on described wafer circuit surface.Because there are many such a technologies, so its productivity ratio that has spent high cost and wafer reduces.
Summary of the invention
The invention provides the wafer support bonding film for the manufacture of the semiconductive thin film wafer, described semiconductive thin film wafer does not need independent bonder during the film reduction process of semiconductor wafer, described wafer support bonding film is not subjected to any restriction of semiconductor wafer sizes, it is by preventing the grinding water infiltration at resistant substrates coating acrylic adhesives layer, the washing process that it can not stay any adhesive phase and therefore not need to add during peeling off at circuit surface, thus prevented the pollution of during the complicated technology damage in the contingent semiconductor wafer and circuit surface.
These and other purpose of the present invention and advantage are apparent from following detailed description of the present invention.
Realize above-mentioned purpose by the wafer support bonding film for the manufacture of the semiconductive thin film wafer, described wafer support bonding film comprises resistant substrates and the heat-resistant adhesive layer that is coated on the described resistant substrates, it is 500 that wherein said heat-resistant adhesive layer comprises molecular weight, 000～3,000,000 acrylic copolymer, energy-beam curable acrylic compounds oligomer and light trigger.
Here, described resistant substrates be following material in a kind of: the polyphenylene oxide of polyimides (PI), PEN (PEN), polybutylene terephthalate (PBT) (PBT), polyphenylene sulfide (PPS), polyamide, polysulfones, full-aromatic polyester, polyacetals, Merlon, modification or polyether-ketone and their laminated material.
Preferably, described resistant substrates has the warpage of 0～5mm under 200 ℃～300 ℃.
Described resistant substrates preferably has the thickness of 100 μ m～3,000 μ m, and has the structure of single or multiple lift.
Described heat-resistant adhesive layer preferably has the thickness of 10 μ m～200 μ m.
Preferably, use adhesive composition to be coated with to obtain described heat-resistant adhesive layer, with respect to 100 parts by weight of acrylic analog copolymers, described adhesive composition comprises the energy-beam curable acrylic compounds oligomer of 3 to 10 weight portions and the light trigger of 0.2 to 10 weight portion.
In addition, described adhesive phase preferably has the bonding strength of 5gf/25mm～800gf/25mm.
[invention effect]
The present invention has following effect: the necessity of having eliminated independent bonder during the film reduction process of semiconductor wafer; Removed any restriction that is subjected to semiconductor wafer sizes; By prevented the infiltration of grinding water at resistant substrates coating acrylic adhesives layer; Therefore during peeling off, remove the adhesive phase on the circuit surface fully, do not need the washing process that adds, thereby prevented the damage in the contingent semiconductor wafer during complicated technology; And the pollution that has prevented circuit surface.
Description of drawings
Fig. 1 has illustrated the prior art film reduction process of semiconductor wafer;
Fig. 2 has illustrated and has used the present invention for the manufacture of the film reduction process of the semiconductor wafer of the wafer support bonding film of semiconductive thin film wafer.
Description of reference numerals
1: adhesive phase
2: supporting bracket
3: the acrylic adhesives layer
4: resistant substrates
5: the wafer support film
10: grinder
11: cutting belt
12: framework
13: cutter sweep
14: arm
15: magnet
16: laminating machine
Embodiment
Hereinafter, will describe the preferred embodiments of the invention with reference to the accompanying drawings in detail.Should be understood that the detailed description that the preferred embodiment of the invention only is provided by way of example, therefore for a person skilled in the art, the various changes in the spirit and scope of the invention and modification will become apparent.
The present invention is for the film that replaces wafer support position used when making semiconductor with thin film wafers for the manufacture of the wafer support bonding film of semiconductive thin film wafer, and comprises resistant substrates and the heat-resistant adhesive layer that is coated on the described resistant substrates.It is 500,000～3,000,000 acrylic copolymer, energy-beam curable acrylic compounds oligomer and light trigger that described heat-resistant adhesive layer comprises molecular weight.Therefore, can in the film reduction process of the wafer that utilizes wafer supporting plate, eliminate by the complicated technology that uses described wafer supporting plate to cause.
Fig. 2 has illustrated and has used the present invention for the manufacture of the film reduction process of the semiconductor wafer of the wafer support bonding film of semiconductive thin film wafer.
Use laminating machine (16), the circuit that wafer support bonding film of the present invention is bonded to semiconductor wafer (W) forms on the surface (surface A).This technology has elimination for the advantage of the adhesion technique of the technology of the needed use spinner of prior art, predrying technology and use electric hot plate.
Then, turn over to use grinder (10) that the back side (surperficial B) of described semiconductor wafer (W) is ground the semiconductor wafer (W) of combination and the laminated material of wafer support bonding film, thus the described semiconductor wafer of attenuate (W).Can use above-mentioned bonding film that the wafer that is thinner than 50 μ m is ground, and not crooked or damage described wafer.The varied in thickness of the wafer that ground is less than or equal to 5 μ m, and is more preferably less than or equals 1 μ m.After grinding is finished, carry out reprocessing at the back side of described semiconductor wafer (W) as required, such as etching, plating, plasma etc., and the corresponding back side is fixed on the cutting belt (11).During reprocessing, etching solution between wafer and the adhesive tape or the infiltration of plating solution are minimized.Described cutting belt (11) has adhesiveness and is maintained on the framework (12).Wafer support bonding film gradually peeled off make thin film semiconductor wafer thereafter.During the technology of using bonding film, the dissolved adhesive layer is optional, and does not need supplementary equipment therefore to peel off bonding film.
Resistant substrates is not limited to specific material, as long as described material satisfies above-mentioned performance, and in view of thermal endurance, chemical resistance, hardness etc., preferably uses synthetic resin film.This resistant substrates is particularly including polyphenylene oxide or the polyether-ketone of polyimides (PI), PEN (PEN), polybutylene terephthalate (PBT) (PBT), polyphenylene sulfide (PPS), polyamide, polysulfones, full-aromatic polyester, polyacetals, Merlon, modification.And, also can use above-mentioned laminated material.
In addition, if carry out the high speed grinding technics during the film reduction process of wafer, then abrasion friction produces the heat of high temperature, thereby causes the resistant substrates distortion.This distortion may cause the damage on circuit surface and the semiconductor wafer.In order to prevent this distortion, described resistant substrates has the warpage below the 10mm under 200 ℃～300 ℃, especially preferably have the warpage of 0～5mm.
And, can supporting semiconductor wafers during the high speed process of lapping and do not produce any distortion in order to make resistant substrates, the thickness of described resistant substrates is 50 μ m～5,000 μ m, more preferably 100 μ m～3,000 μ m.
The present invention uses energy-beam curable adhesive for the manufacture of (heat-resisting) adhesive phase of the wafer support bonding film of semiconductive thin film wafer, and particularly including multiple adhesive, such as acrylic copolymer adhesive, rubber adhesive, silicone adhesive, polyvinylether etc.Preferably use the acrylic copolymer adhesive in the present invention, described acrylic copolymer adhesive can easily change its performance by polymer composition being carried out modification or introducing functional group.
The compound of described acrylic copolymer requirements and potentialities beam-curable, light trigger etc. evenly mix.If the molecular weight of described acrylic copolymer is too high, the performance that then is difficult to produce uniform mixture and therefore is difficult to obtain homogeneous.If molecular weight is too low, but then the energy beam-curable on surface just become be higher than essential, thereby suitably do not protect the circuit surface of semiconductor wafer.Therefore, the molecular weight of acrylic copolymer of the present invention is preferably 400,000～4, and 000,000, more preferably 500,000～3,000,000.
The aforesaid propylene acid copolymer is particularly including methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, acrylic acid-2-ethyl caproite, 2-ethyl hexyl acrylate, butyl methacrylate, methacrylic acid-2-Octyl Nitrite, 2-Propenoic acid, 2-methyl-, octyl ester etc.
As the energy-beam curable compound that in above-mentioned energy-beam curable adhesive, uses, but be extensive use of the low molecular weight compound that has the carbon-to-carbon double bond of at least two energy beam polymerizations in the molecule, can described molecule be reticulated by illumination, for example, as at Japan patent applicant announce S60-196, disclosed in 956 and S60-223,139.Especially, use oligomer, such as aromatic polyurethane acrylate, aliphatic urethane acrylate, polyester acrylate, epoxy acrylate, acrylic compounds oligomer, organosilicon diacrylate, organosilicon six acrylate, phenyl phenol Novolac acrylate etc.For 100 parts by weight of acrylic analog copolymers, usually with 1 to 20 weight portion, and preferably use above-mentioned energy-beam curable compound with the ratio of 3 to 10 weight portions.
In addition, but but also can use the energy beam-curable copolymer that has a group of energy beam polymerization at side chain to form energy-beam curable adhesive phase.But this energy-beam curable copolymer had both had adhesiveness and had also had the energy beam-curable.For example, in Japan patent applicant announce H5-32946 and H8-27239, but the energy-beam curable copolymer that has the group of energy beam polymerization at side chain is disclosed in detail.
And, but need to use light trigger to cause the curing of the energy beam-curable compound in adhesive phase of the present invention.The example of described light trigger comprises, for example, and diphenyl (2,4,6-trimethylbenzene formyl) phosphine oxide, benzophenone, acetophenone, dibenzyl, diacetyl, diphenylsulfide, azobis isobutyronitrile etc.For 100 parts by weight of acrylic analog copolymers, use above-mentioned light trigger with the ratio of 0.2 to 10 weight portion, preferred 1 to 5 weight portion usually.
Consider that the present invention changes for the manufacture of the thickness of the adhesive phase of the wafer support bonding film of the semiconductive thin film wafer circuit surface with the semiconductor wafer that will use; described thickness is preferably 5 μ m～300 μ m; 10 μ m～200 μ m more preferably are in order to suitably protect semi-conductive circuit surface.
In addition; for by preventing that during the grinding technics infiltration of grinding water from protecting the circuit surface of semiconductor wafer, adhesive phase can keep enough bonding strengths, and described bonding strength is preferably 1gf/25mm～1; 000gf/25mm, more preferably 5gf/25mm～800gf/25mm.
To describe the present invention in detail by preferred embodiment below; Yet, the invention is not restricted to such embodiment.
[embodiment 1]
At first, be about 1,500 for the molecular weight of per 100 weight portions, 000 and its side chain on have the acrylic copolymer adhesive of hydroxyl, add the ethyl acetate (EA) of 66.7 weight portions, and stirred 1 hour.Then, add the phenyl phenol Novolac acrylate of the energy-beam curable acrylic compounds oligomer of conduct of 6 weight portions, stirred 1 hour; And add 0.4 weight portion based on the organic acid curing accelerator, stirred again 1 hour.At last, add the diphenyl as light trigger (2,4, the 6-trimethylbenzene formyl) phosphine oxide of 0.2 weight portion, stirred 1 hour, thereby obtain energy-beam curable adhesive composition.With described adhesive composition be coated on the polyimide film that thickness is 125 μ m (Toray Dufone Corporation, 500V) on, and 130 ℃ of dryings 3 minutes, then carry out energy beam and solidify.Thereafter, to have adhesive composition coating film thereon and be connected to the stripping film that thickness is 38 μ m (eastern beautiful Saehan company (ToraysaehanCo.), XD5BR) on, and under 45 ℃, it is carried out burin-in process 48 hours, thereby make the bonding film with 10 μ m adhesive phases.
[embodiment 2]
With the method identical with embodiment 1, obtained to have the bonding film of 50 μ m adhesive phases.
[comparative example 1]
At first, be about 1,500 for the molecular weight of the embodiment 1 of per 100 weight portions, 000 and its side chain on have the acrylic copolymer adhesive of hydroxyl, add the ethyl acetate (EA) of 66.7 weight portions, and stirred 1 hour.Then, add the curing agent based on isocyanates of 5 weight portions, and stir 1 hour again, thereby obtain heat-setting adhesive composition.With described heat-setting adhesive composition be coated on the polyimide film that thickness is 125 μ m (TorayDufone Corporation, 500V) on, and 130 ℃ dry 3 minutes down.Thereafter, to have adhesive composition coating film thereon and be connected to the stripping film that thickness is 38 μ m (eastern beautiful Saehan company (Toraysaehan Co.), XD5BR) on, and under 45 ℃, it is carried out burin-in process 48 hours, thereby make the bonding film with 10 μ m adhesive phases.
[comparative example 2]
With the method identical with comparative example 1, obtained to have the bonding film of 50 μ m adhesive phases.
Based on following test case, measured the physical property of the bonding film of above-described embodiment and comparative example, and shown the result in the table 1.
[test case 1: the measurement of bonding strength]
In order to check in the circuit surface of wafer and the energy-beam curable bonding film of as above making and the bonding strength between the heat-setting bonding film, described bonding film is cut into 150mm (length) * 50mm (width).Then, at room temperature, by utilizing the roll rubber roller of about 2kg of twice reciprocating motion, separately bonding film is deposited on separately the wafer circuit surface.At 180 ° angle place bonding strength measured thereafter.In this test, UTM (Laue moral instrument company (Lloyd Instruments), LF plus) is used as measuring equipment.
[test case 2: thermal endurance is measured]
In order to check as above the energy-beam curable bonding film made and the thermal endurance of heat-setting bonding film, use the decomposability of thermogravimetric analyzer (the anti-company of speeding (Netzsch), TG 209F3) to adhesive phase under 300 ℃ to test.Analyze under nitrogen atmosphere by with the speed of 10 ℃/min temperature being increased to 500 ℃ from 30 ℃, thereby measure mass loss in percentage, and measure the mass loss under 300 ℃.
[table 1]
Figure BPA00001258319000101
As can be seen from Table 1, solidify by the energy beam in the embodiment of the invention, it is fine and close that the internal structure of adhesive phase has become, thereby reduced mass loss.Therefore, can confirm to solidify by energy beam, improve the thermal endurance of described adhesive phase.
[embodiment 3]
Except heat-resistant material is changed into the polyimide film that thickness is 225 μ m (KNEKA, 225AH) outside, use the program identical with embodiment 2 with the acquisition bonding film.
[embodiment 4]
50 μ m are coated on the polyimide film that thickness is 125 μ m (Toray Dufone Corporation based on the adhesive of epoxy resin, 500V) last and following dry 3 minutes at 175 ℃, then use laminating roll to deposit described film down at 60 ℃, thereby make the polyimide film of 300 μ m.Except the polyimide film of the deposition of using 300 μ m as the resistant substrates, use the program identical with embodiment 2 with the acquisition bonding film.
[comparative example 3]
Except heat-resistant material is changed into the PETG that thickness is 125 μ m (eastern beautiful Saehan company (Toraysaehan Co.), XU42) outside, use the program identical with embodiment 2 with the acquisition bonding film.
[comparative example 4]
Except deposited film is changed into the PETG that thickness is 125 μ m (eastern beautiful Saehan company (Toraysaehan Co.), XU42) outside, use the program identical with embodiment 4 with the acquisition bonding film.
For the physical property of the bonding film of estimating above-described embodiment and comparative example, carry out following test and show the result in the table 2.
[test case 3: the evaluation of chip back surface nonferromagnetic substance]
Utilize belt supporting frame (Adwill RAD-3500 is made by Lindeke Co., Ltd (Lintec)), will be connected to Si wafer (diameter: 300mm, thickness: 750 μ m) according to each adhesive tape of embodiment and comparative example manufacturing.Then, utilize the DFG-840 that is made by Disco company that described Si wafer is ground to thickness and reach 50 μ m.After grinding technics is finished, under the situation of not removing bonding film, estimate.Evaluation result is explained as follows.
Zero: do not damage and micro-crack at wafer
△: damage or micro-crack are arranged at wafer
*: at wafer damage and micro-crack are arranged
[test case 4: the affirmation of chemical resistance (organic solvent)]
The wafer that will have according to the grinding of the bonding film of embodiment and comparative example manufacturing remains on acetone/TMAH/ cyclopentanone/1,3, keeps 30 minutes in the solution of 5-trimethylbenzene and in scaling powder scavenger (fluxcleaner).Evaluation result is explained as follows.
Zero: do not permeate at the circuit surface of wafer with between for the manufacture of the wafer bonding film of semiconductive thin film wafer.
△: be less than or equal to 1mm at the circuit surface of wafer with for the manufacture of the infiltration between the wafer bonding film of semiconductive thin film wafer.
*: the circuit surface of wafer and for the manufacture of the infiltration between the wafer bonding film of semiconductive thin film wafer greater than 1mm.
[test case 5: the affirmation of elching resistant]
To have according to the wafer of the grinding of the bonding film of embodiment and comparative example manufacturing with H 2SO 4NH with the HF mixing 4Kept 1 hour in the OH solution.
[test case 6: the affirmation of chip warpage]
The wafer that ground was solidified 70 minutes in 270 ℃ baking oven.
[test case 7: the affirmation of grinding water infiltration]
After grinding technics is finished, the circuit surface of bonding film from semiconductor wafer separated, and the checking circuit surface is to check the infiltration that whether has grinding water.
Zero: do not permeate at the circuit surface of wafer with between for the manufacture of the wafer bonding film of semiconductive thin film wafer.
△: be less than or equal to 1mm at the circuit surface of wafer with for the manufacture of the infiltration between the wafer bonding film of semiconductive thin film wafer.
*: the circuit surface of wafer and for the manufacture of the infiltration between the wafer bonding film of semiconductive thin film wafer greater than 1mm.
[table 2]
Figure BPA00001258319000131
As seen from Table 2, when polyimide film during as the resistant substrates in the embodiment of the invention 2 to 4, can be realized nonferromagnetic substance, chemical resistance, elching resistant and the chip warpage of excellent chip back surface.
In the multiple embodiments that the inventor has carried out, specifically with reference to embodiment and embodiment, describe the present invention in detail, but be to be understood that, in the case of without departing from the spirit and scope of the present invention, those skilled in the art can change and revise.

Claims (6)

1. wafer support bonding film for the manufacture of the semiconductive thin film wafer, it comprises:
Resistant substrates and the heat-resistant adhesive layer that is coated on the described resistant substrates,
The molecular weight that wherein said heat-resistant adhesive layer comprises 100 weight portions is 500,000～3,000, the energy-beam curable acrylic compounds oligomer of the ethyl acetate of 000 acrylic copolymer, 66.7 weight portions, 3～10 weight portions, the curing accelerator of 0.4 weight portion and the light trigger of 0.2～10 weight portion
Wherein said heat-resistant adhesive layer is that energy beam solidifies.
2. the wafer support bonding film for the manufacture of the semiconductive thin film wafer of claim 1, wherein said resistant substrates are a kind of in the following material: polyimides (PI), PEN (PEN), polybutylene terephthalate (PBT) (PBT), polyphenylene sulfide (PPS), polyamide, polysulfones, full-aromatic polyester, polyacetals, Merlon, the polyphenylene oxide of modification, or polyether-ketone, and their laminated material.
3. the wafer support bonding film for the manufacture of the semiconductive thin film wafer of claim 1, wherein said resistant substrates has the warpage of 0～5mm under 200 ℃～300 ℃.
4. the wafer support bonding film for the manufacture of the semiconductive thin film wafer of claim 1, wherein said resistant substrates has the thickness of 100 μ m～3,000 μ m, and has the structure of single or multiple lift.
5. the wafer support bonding film for the manufacture of the semiconductive thin film wafer of claim 1, wherein said heat-resistant adhesive layer has the thickness of 10 μ m～200 μ m.
6. each the wafer support bonding film for the manufacture of the semiconductive thin film wafer in the claim 1 to 5, wherein said adhesive phase has the bonding strength of 5gf/25mm～800gf/25mm.
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KR101217907B1 (en) * 2011-01-27 2013-01-02 도레이첨단소재 주식회사 Adhesive film for semiconductor wafter having protection layer
US20150034238A1 (en) * 2012-03-20 2015-02-05 3M Innovative Properties Company Laminate body, method, and materials for temporary substrate support and support separation
CN105336581A (en) * 2015-11-04 2016-02-17 株洲南车时代电气股份有限公司 Manufacturing method and apparatus of power semiconductor device
CN106783548B (en) * 2016-12-30 2020-01-03 通富微电子股份有限公司 Wafer gum application method
CN107887284A (en) * 2017-09-26 2018-04-06 宁波芯健半导体有限公司 A kind of method of large scale board operation small size wafer
KR102455146B1 (en) * 2020-02-10 2022-10-17 주식회사 나노인 Reversible Coating Method for Encapsulating and Filling Structures on Substrates
CN112837996B (en) * 2021-01-05 2022-10-14 上海应用技术大学 Preparation method of thin-layer two-dimensional material

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5637395A (en) * 1984-03-12 1997-06-10 Nitto Electric Industrial Co., Ltd. Thin adhesive sheet for working semiconductor wafers
US5962097A (en) * 1996-01-09 1999-10-05 Nitto Denko Corporation Protective member for semiconductor wafer
CN1677623A (en) * 2004-04-01 2005-10-05 株式会社迪思科 Wafer processing method
CN1815688A (en) * 2004-11-29 2006-08-09 东京応化工业株式会社 Stickup method of support plate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4447206B2 (en) * 2002-10-18 2010-04-07 株式会社ディスコ Semiconductor wafer protection unit and semiconductor wafer processing method
TWI310230B (en) * 2003-01-22 2009-05-21 Lintec Corp Adhesive sheet, method for protecting surface of semiconductor wafer and method for processing work
JP4364535B2 (en) * 2003-03-27 2009-11-18 シャープ株式会社 Manufacturing method of semiconductor device
JP2005191535A (en) * 2003-12-01 2005-07-14 Tokyo Ohka Kogyo Co Ltd Sticking device and sticking method
JP2005183689A (en) * 2003-12-19 2005-07-07 Seiko Epson Corp Support substrate, conveying body, semiconductor device, method for manufacturing the same, circuit board and electronic apparatus
JP2005322738A (en) * 2004-05-07 2005-11-17 Toshiba Corp Manufacturing method of semiconductor device
JP4574234B2 (en) * 2004-06-02 2010-11-04 リンテック株式会社 Adhesive sheet for semiconductor processing and method for manufacturing semiconductor chip
KR100845978B1 (en) * 2007-04-25 2008-07-11 도레이새한 주식회사 Adhesive tape for semiconductor dicing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5637395A (en) * 1984-03-12 1997-06-10 Nitto Electric Industrial Co., Ltd. Thin adhesive sheet for working semiconductor wafers
US5962097A (en) * 1996-01-09 1999-10-05 Nitto Denko Corporation Protective member for semiconductor wafer
CN1677623A (en) * 2004-04-01 2005-10-05 株式会社迪思科 Wafer processing method
CN1815688A (en) * 2004-11-29 2006-08-09 东京応化工业株式会社 Stickup method of support plate

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2005-183689A 2005.07.07
JP特开2005-191535A 2005.07.14

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