JPWO2019212008A5 - - Google Patents

Claims (16)

It is a temporary adhesive for processing the back surface of the wafer by detachably adhering it between the support and the circuit surface of the wafer, and the component (A) that is cured by the hydrosilylation reaction and the 5% mass reduction in Tg-DTA. The temporary adhesive containing a polymerization inhibitor (B) having a temperature of 80 ° C. or higher and a solvent (C). The component (A) is a siloxane unit (Q unit) represented by SiO ₂ , a siloxane unit (M unit) represented by R ¹ R ² R ³ SiO _1/2 , and R ⁴ R ⁵ SiO _2/2 . A siloxane unit selected from the group consisting of a siloxane unit (D unit) represented by the siloxane unit (D unit) and a siloxane unit (T unit) represented by R ⁶ SiO _3/2 (however, R ¹ to R ⁶ are monovalent chemical groups. A polyorganosiloxane (a1) containing an alkyl group having 1 to 10 carbon atoms and an alkenyl group having 2 to ¹⁰ carbon atoms as ^R1 to R6. , A polysiloxane (A1) containing the siloxane unit and a polyorganosiloxane (a2) containing an alkyl group having 1 to ¹⁰ carbon atoms as ^R1 to R6 and a hydrogen atom , and a platinum group metal-based catalyst ( The temporary adhesive according to claim 1, which comprises A2). The polymerization inhibitor (B) is of the formula (1):

(However, in the formula (1), R ⁷ and R ⁸ are both aryl groups having 6 to 40 carbon atoms, or alkyl groups having 1 to 10 carbon atoms and aryl groups having 6 to 40 carbon atoms. The temporary adhesive according to claim 1 or 2, which is a compound represented by (R ⁷ and R ⁸ may form a ring with each other). The polymerization inhibitor (B) is 1-phenyl-2-propin-1-ol, 2-phenyl-3-butyne-2-ol, 1,1-diphenyl-2-propin-1-ol, or 9-ethynyl. -9-The temporary adhesive according to claim 1 or 2, which is fluorenol. The temporary adhesive according to any one of claims 1 to 4, which contains polydimethylsiloxane, epoxy group-containing polydimethylsiloxane, phenyl group-containing polydimethylsiloxane, or a mixture thereof as the peeling component (D). The back surface of the wafer including the temporary adhesive layer detachably adhered between the support and the circuit surface of the wafer is processed by using the temporary adhesive according to any one of claims 1 to 5. Laminated for. The temporary adhesive layer formed by the temporary adhesive according to any one of claims 1 to 5, polydimethylsiloxane, epoxy group-containing polydimethylsiloxane, phenyl group-containing polydimethylsiloxane, or a combination thereof. A laminate for processing the back surface of a wafer, which comprises a release agent layer formed of a mixture and includes a temporary adhesive layer and a release agent layer that are detachably adhered between a support and a circuit surface of the wafer. The temporary adhesive according to any one of claims 1 to 5 is applied onto the first substrate, the solvent is removed by heating to form a temporary adhesive layer, and then the temporary adhesive layer is coated with the temporary adhesive layer. (Ii) A method for joining a laminated body in which two substrates are bonded and heated from the first substrate side. The temporary adhesive according to any one of claims 1 to 5 is applied onto the first substrate, and the solvent is removed by heating to form a temporary adhesive layer, while polydimethyl is formed on the second substrate. A release agent containing siloxane, epoxy group-containing polydimethylsiloxane, phenyl group-containing polydimethylsiloxane, or a mixture thereof is applied to form a release agent layer by heating, and then the temporary adhesive layer and the release agent layer are formed. A method for bonding a laminate in which the first substrate and the second substrate are bonded so as to face each other and heated from the first substrate side. The joining method according to claim 8 or 9, wherein the first substrate is a support, the second substrate is a wafer, and the circuit surface of the wafer faces the surface of the first substrate. The joining method according to claim 8 or 9, wherein the first substrate is a wafer, the second substrate is a support, and the circuit surface of the wafer faces the surface of the second substrate. The temporary adhesive according to any one of claims 1 to 5 is applied onto the first substrate to form a temporary adhesive layer, and then a second substrate is bonded thereto, and then the first substrate is formed. A peeling method in which the temporary adhesive layer is cured by heating from the side to complete a laminated body, then the laminated body is processed, and the temporary adhesive layer is peeled off between the substrate and the temporary adhesive layer. The temporary adhesive according to any one of claims 1 to 5 is applied on the first substrate to form a temporary adhesive layer, while polydimethylsiloxane and epoxy group-containing polydimethyl are formed on the second substrate. A release agent containing siloxane, a phenyl group-containing polydimethylsiloxane, or a mixture thereof is applied to form a release agent layer by heating, and then the temporary adhesive layer and the release agent layer are opposed to each other. The substrate and the second substrate are bonded and heated from the first substrate side to cure the temporary adhesive layer and the release agent layer to complete the laminate, and then the laminate is processed, and then the substrate and the substrate are formed. A peeling method for peeling between the temporary adhesive layer and the peeling agent layer. The peeling method according to claim 12 or 13, wherein the first substrate is a support, the second substrate is a wafer, and the circuit surface of the wafer faces the surface of the first substrate. The peeling method according to claim 12 or 13, wherein the first substrate is a wafer, the second substrate is a support, and the circuit surface of the wafer faces the surface of the second substrate. The peeling method according to any one of claims 12 to 15, wherein the processing is backside polishing.