CN102148309A - LED (light emitting diode) chip with improved structure - Google Patents
LED (light emitting diode) chip with improved structure Download PDFInfo
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- CN102148309A CN102148309A CN2011100693694A CN201110069369A CN102148309A CN 102148309 A CN102148309 A CN 102148309A CN 2011100693694 A CN2011100693694 A CN 2011100693694A CN 201110069369 A CN201110069369 A CN 201110069369A CN 102148309 A CN102148309 A CN 102148309A
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Abstract
The invention relates to the technical field of LED (light emitting diode) manufacturing, in particular relates to an LED chip with an improved structure. The LED chip with an improved structure provided by the invention comprises a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are sequentially stacked from bottom to top, wherein a reflector is stacked below the substrate; granular silver particles are distributed between the reflector and the substrate; one side wall of the silver particles is adhered to the lower surface of the substrate; and other side walls of the silver particles are attached to the reflector. The silver particles below the substrate are combined with the reflector to form a composite reflector; compared with a single metal reflector or dielectric reflector, the composite reflector has higher surface roughness and can change the lights emitted by the active layer from a specular reflection state into a diffuse reflection state which can increase the lights penetrating through a light emitting surface of the LED chip provided by the invention; and consequently, through the invention, the luminous efficiency can be effectively improved, and the illumination brightness can be improved finally.
Description
Technical field
The present invention relates to the LED preparing technical field, relate in particular to a kind of structure improved led chip.
Background technology
Cause the whole world to face the threat of energy shortage and earth environment great change because of excessively developing, the novel and light source energy-saving and carbon-saving notion becomes one of 21st century illumination most important.Light-emitting diode (Light Emitting Diode---the LED) representative of the green illumination light source of beyond doubt tool potentiality to be exploited; Advantages such as light-emitting diode has that volume is little, caloric value is low, power consumption is little, the life-span is long, reaction speed is fast, environmental protection and high brightness.Rely on above-mentioned many-sided advantage, light-emitting diode is used more and more general and range of application diversification day by day, as traffic lights, automobile-used lighting apparatus, outdoor display, LCD TV and mobile phone backlight etc.
Along with the led chip technology of preparing constantly improves, how to improve brightness and become the important indicator that LED enters lighting field, wherein can not be ignored especially with gallium nitride (GaN) series LED institute role.Though existing LED lamp can be realized illumination functions to a certain extent, the ubiquity light extraction efficiency is not high, and defectives such as further raising are demanded in brightness urgently.
Summary of the invention
The objective of the invention is to provides a kind of light extraction efficiency, brightness all higher structure improved led chip at the deficiencies in the prior art.
For achieving the above object, the present invention is achieved through the following technical solutions.
A kind of structure improved led chip, include the substrate, n type semiconductor layer, active layer and the p type semiconductor layer that are cascading from bottom to up, the stacked speculum that is provided with in the below of described substrate, be distributed with granular silver particles between speculum and the substrate, one sidewall of silver particles adheres to the lower surface of substrate, and all the other sidewalls of silver particles and speculum are fitted.
Wherein, described silver particles is hemispherical, and the spherical of silver particles and described speculum are fitted, and the horizontal plane of silver particles adheres to the lower surface of described substrate.
Wherein, described n type semiconductor layer is a N type GaN layer, and described active layer is the multiple quantum trap luminous layer of InGaN/GaN, and described p type semiconductor layer is a P type GaN layer.
Wherein, described substrate is a silicon carbide substrate.
Wherein, described substrate is a sapphire substrate.
Wherein, described n type semiconductor layer is electrically connected with N type welded gasket, and described p type semiconductor layer is electrically connected with P type welded gasket.
Wherein, be provided with transparency conducting layer between described P type welded gasket and the described p type semiconductor layer, P type welded gasket, transparency conducting layer and p type semiconductor layer are electrically connected successively.
Wherein, described transparency conducting layer is indium oxide gallium transparency conducting layer or ZnO transparent conductive layer.
Wherein, described speculum is TiO
2/ SiO
2Speculum.
Beneficial effect of the present invention is: a kind of structure improved led chip of the present invention, include the substrate, n type semiconductor layer, active layer and the p type semiconductor layer that are cascading from bottom to up, the stacked speculum that is provided with in the below of described substrate, be distributed with granular silver particles between speculum and the substrate, one sidewall of silver particles adheres to the lower surface of substrate, and all the other sidewalls of silver particles and speculum are fitted.The silver particles and the reflector group that are positioned at the substrate below merge the formation composite reflector, for single metallic mirror or dielectric medium speculum, this composite reflector has higher surface roughness and the light that active layer can be sent becomes the diffuse reflection state by the direct reflection state, and diffuse reflection can increase the light that appears exiting surface of the present invention; So the present invention can improve light extraction efficiency and the final brightness of illumination that promotes effectively.
Description of drawings
The present invention is further illustrated to utilize accompanying drawing below, but the embodiment in the accompanying drawing becomes any limitation of the invention inadequately.
Fig. 1 is the structural representation of a kind of structure improved led chip of the present invention.
In Fig. 1, include:
1---substrate 2---n type semiconductor layer 3---active layer
4---p type semiconductor layer 5---speculum 6---silver particles
7---N type welded gasket 8---P type welded gasket 9---transparency conducting layers.
Embodiment
For quote and know for the purpose of, hereinafter employed technical term, write a Chinese character in simplified form or abridge and be summarized as follows:
GaN---gallium nitride; InGaN/GaN---indium gallium nitride/gallium nitride; TiO
2---titanium dioxide; SiO
2---silicon dioxide.
Come technical scheme of the present invention is known intactly description that obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment below in conjunction with embodiment.Based on embodiments of the invention, the every other embodiment that those of ordinary skills are obtained under the prerequisite of not making creative work belongs to the scope of protection of the invention.
As shown in Figure 1, a kind of structure improved led chip, include the substrate 1, n type semiconductor layer 2, active layer 3 and the p type semiconductor layer 4 that are cascading from bottom to up, the stacked speculum 5 that is provided with in the below of described substrate 1, be distributed with granular silver particles 6 between speculum 5 and the substrate 1, one sidewall of silver particles 6 adheres to the lower surface of substrate 1, and all the other sidewalls of silver particles 6 and speculum 5 are fitted.
In preparation process of the present invention, at first use evaporator to plate layer of even silver film at the lower surface of substrate 1; Substrate 1 after evaporation finished is put into quick anneal oven and is carried out annealing in process, wherein, the purpose of annealing in process is: make silver-colored film melted by heat and reach molten condition, silver-colored liquation flocks together owing to the Van der Waals force effect between the silver-colored molecule and finally makes the silver-colored film of stratiform become granular silver particles 6; Treat after the silver-colored film particlesization; cooled and solidified also utilizes evaporator to plate the speculum 5 that one deck is used for reflection ray again below substrate 1; at this moment; silver particles 6 is held between substrate 1 and the speculum 5; wherein; one sidewall of silver particles 6 adheres to the lower surface of substrate 1, and all the other sidewalls of silver particles 6 and speculum 5 are fitted.
When the present invention connects forward voltage, at this moment, p type semiconductor layer 4 is connected with the positive pole of external power supply, n type semiconductor layer 2 is connected with the negative pole of external power supply, the hole that is positioned at p type semiconductor layer 4 under electric field action towards n type semiconductor layer 2 one side shiftings, towards p type semiconductor layer 4 one side shiftings, hole and electronics are compound and produce the fluorescence of spontaneous radiation at active layer 3 under electric field action for the electronics that is positioned at n type semiconductor layer 2.The silver particles 6 that is positioned at substrate 1 below is with speculum 5 combinations and form composite reflector, the light that sends by active layer 3 after silver particles 6 and speculum 5 reflections again the exiting surface through being positioned at p type semiconductor layer 4 one sides be transmitted through the external world; For existing single metallic mirror or dielectric medium speculum, this composite reflector has higher surface roughness and the light that active layer 3 can be sent becomes the diffuse reflection state by the direct reflection state, for direct reflection, diffuse reflection can increase the light that appears exiting surface; So the present invention can improve light extraction efficiency and the final brightness of illumination that promotes effectively.In addition, speculum 5 of the present invention can be TiO
2/ SiO
2Speculum, wherein, this TiO
2/ SiO
2Speculum comprises the TiO that stacks gradually and be crisscross arranged
2Layer and SiO
2Layer, the present invention is by adopting TiO
2Layer and SiO
2The version that layer piles up realizes the effect of comprehensive reflection, and then further reduces light loss and improve light extraction efficiency; Certainly, speculum 5 of the present invention also can be the speculum of other types, for example metallic mirror that is prepared from by metal materials such as gold, aluminium, nickel or chromium.
In addition, in the silver-colored film annealing process of stratiform, the silver liquation is gathered into bulk and finally becomes silver particles 6 through cooled and solidified owing to intermolecular Van der Waals force effect, silver particles 6 after the moulding generally is hemispherical, at this moment, the spherical of silver particles 6 and speculum 5 are fitted, and the horizontal plane of silver particles 6 adheres to the lower surface of substrate 1.Certainly, above-mentioned silver particles 6 shapes are not construed as limiting the invention, and in concrete preparation forming process, silver particles 6 can also be prepared into other shapes.
The present invention can be applied to various types of light-emitting diodes and be not limited only to the light-emitting diode of a certain particular type, i.e. the present invention can be applied in the dissimilar light-emitting diode such as GaN series LED, GaAs series LED, gallium chloride series LED; Wherein, consider GaN series LED, so the present invention is applied to the effect that GaN series LED will be obtained highly significant in the important function that lighting field played.When the present invention was applied to GaN series LED, at this moment, n type semiconductor layer 2 was a N type GaN layer, and active layer 3 is the multiple quantum trap luminous layer of InGaN/GaN, and p type semiconductor layer 4 is a P type GaN layer.
Further, substrate 1 can be silicon carbide substrate, also can be sapphire substrate.Wherein, silicon carbide substrate has favorable conductive and heat conductivility, and this helps applying the present invention in the bigger high-power LED chip of area; Sapphire substrate have stability better, mechanical strength is higher and characteristics such as processing technology maturation, this helps popularization of the present invention and application.
Further, the substrate 1 of considering unlike material has different electric conductivities, when substrate 1 is sapphire substrate, because sapphire substrate can not conduct electricity, can not make vertical stratification so make the led chip of substrate 1 by sapphire substrate, can only make horizontal structure as shown in Figure 1, at this moment, n type semiconductor layer 2 is electrically connected with N type welded gasket 7, p type semiconductor layer 4 is electrically connected with P type welded gasket 8, N type welded gasket 7 is connected with the negative pole of external power supply, and P type welded gasket 8 is connected with the positive pole of external power supply; When substrate 1 was silicon carbide substrate, because silicon carbide substrate has excellent conductive performance, so the led chip of making substrate 1 by silicon carbide substrate can be made vertical stratification, at this moment, N type welded gasket 7 was vertically arranged with P type welded gasket 8.
As preferred embodiment, be provided with transparency conducting layer 9 between described P type welded gasket 8 and the described p type semiconductor layer 4, P type welded gasket 8, transparency conducting layer 9 and p type semiconductor layer 4 are electrically connected successively.In the course of work of the present invention, transparency conducting layer 9 makes electric current dispersedly by P type GaN layer and the multiple quantum trap luminous layer of InGaN/GaN, has so just increased the light-emitting area of the multiple quantum trap luminous layer of InGaN/GaN and then has increased brightness of the present invention.In preparation process of the present invention, transparency conducting layer 9 is covered on the top of P type GaN layer, and P type welded gasket 8 is connected together P type GaN layer and external power supply.In addition, transparency conducting layer 9 of the present invention can be indium oxide gallium (ITO) transparency conducting layer, also can be the ZnO transparent conductive layer, certainly, above-mentioned transparency conducting layer 9 is not construed as limiting the invention, transparency conducting layer of the present invention can also be thin metal type transparency conducting layer, for example nickel-Jin double-metal layer.
Above content is preferred embodiment of the present invention only, and for those of ordinary skill in the art, according to thought of the present invention, the part that all can change in specific embodiments and applications, this description should not be construed as limitation of the present invention.
Claims (9)
1. structure improved led chip, include the substrate (1), n type semiconductor layer (2), active layer (3) and the p type semiconductor layer (4) that are cascading from bottom to up, it is characterized in that: the stacked speculum (5) that is provided with in the below of described substrate (1), be distributed with granular silver particles (6) between speculum (5) and the substrate (1), one sidewall of silver particles (6) adheres to the lower surface of substrate (1), and all the other sidewalls of silver particles (6) and speculum (5) are fitted.
2. a kind of structure improved led chip according to claim 1, it is characterized in that: described silver particles (6) is hemispherical, the spherical of silver particles (6) and described speculum (5) are fitted, and the horizontal plane of silver particles (6) adheres to the lower surface of described substrate (1).
3. a kind of structure improved led chip according to claim 1, it is characterized in that: described n type semiconductor layer (2) is a N type GaN layer, described active layer (3) is the multiple quantum trap luminous layer of InGaN/GaN, and described p type semiconductor layer (4) is a P type GaN layer.
4. a kind of structure improved led chip according to claim 3 is characterized in that: described substrate (1) is a silicon carbide substrate.
5. a kind of structure improved led chip according to claim 3 is characterized in that: described substrate (1) is a sapphire substrate.
6. a kind of structure improved led chip according to claim 5 is characterized in that: described n type semiconductor layer (2) is electrically connected with N type welded gasket (7), and described p type semiconductor layer (4) is electrically connected with P type welded gasket (8).
7. a kind of structure improved led chip according to claim 6, it is characterized in that: be provided with transparency conducting layer (9) between described P type welded gasket (8) and the described p type semiconductor layer (4), P type welded gasket (8), transparency conducting layer (9) and p type semiconductor layer (4) are electrically connected successively.
8. a kind of structure improved led chip according to claim 7 is characterized in that: described transparency conducting layer (9) is indium oxide gallium transparency conducting layer or ZnO transparent conductive layer.
9. a kind of structure improved led chip according to claim 1 is characterized in that: described speculum (5) is TiO
2/ SiO
2Speculum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110069369 CN102148309B (en) | 2011-03-22 | 2011-03-22 | LED (light emitting diode) chip with improved structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110069369 CN102148309B (en) | 2011-03-22 | 2011-03-22 | LED (light emitting diode) chip with improved structure |
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|---|---|
| CN102148309A true CN102148309A (en) | 2011-08-10 |
| CN102148309B CN102148309B (en) | 2013-09-18 |
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| CN 201110069369 Expired - Fee Related CN102148309B (en) | 2011-03-22 | 2011-03-22 | LED (light emitting diode) chip with improved structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993754A (en) * | 2019-12-04 | 2020-04-10 | 南京邮电大学 | LED tube core with bionic metal nano island-shaped structure and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101071836A (en) * | 2007-04-10 | 2007-11-14 | 何清华 | Epitaxial wafer growth method for improving galliumnitride base LED chip antistatic capability |
| US20070272933A1 (en) * | 2006-05-23 | 2007-11-29 | Lg.Philips Lcd Co., Ltd. | Light-emitting diode chip for backlight unit, manufacturing method thereof, and liquid crystal display device including the same |
| CN201985158U (en) * | 2011-03-22 | 2011-09-21 | 东莞市福地电子材料有限公司 | LED chip with improved structure |
-
2011
- 2011-03-22 CN CN 201110069369 patent/CN102148309B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070272933A1 (en) * | 2006-05-23 | 2007-11-29 | Lg.Philips Lcd Co., Ltd. | Light-emitting diode chip for backlight unit, manufacturing method thereof, and liquid crystal display device including the same |
| CN101071836A (en) * | 2007-04-10 | 2007-11-14 | 何清华 | Epitaxial wafer growth method for improving galliumnitride base LED chip antistatic capability |
| CN201985158U (en) * | 2011-03-22 | 2011-09-21 | 东莞市福地电子材料有限公司 | LED chip with improved structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993754A (en) * | 2019-12-04 | 2020-04-10 | 南京邮电大学 | LED tube core with bionic metal nano island-shaped structure and preparation method thereof |
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| CN102148309B (en) | 2013-09-18 |
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