CN102148154B - Multilayer ohmic contact system of gallium nitride device with composite metal barrier layer - Google Patents

Multilayer ohmic contact system of gallium nitride device with composite metal barrier layer Download PDF

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CN102148154B
CN102148154B CN201010600790A CN201010600790A CN102148154B CN 102148154 B CN102148154 B CN 102148154B CN 201010600790 A CN201010600790 A CN 201010600790A CN 201010600790 A CN201010600790 A CN 201010600790A CN 102148154 B CN102148154 B CN 102148154B
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ohmic contact
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gallium nitride
algan
metal
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CN102148154A (en
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任春江
陈堂胜
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CETC 55 Research Institute
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Abstract

The invention discloses a multilayer ohmic contact system of a gallium nitride device with a composite metal barrier layer, which is characterized in that the ohmic contact system adopted by a source electrode 16 and a drain electrode 17 of an aluminum-gallium-nitrogen (AlGaN)/gallium nitride (GaN) high electron mobility transistor (HEMT) is Ti/Al/Ni/Mo/Au. The ohmic contact system has the advantage of simultaneously meeting the requirements on low ohmic contact resistivity, high surface evenness and high reliability required by the AlGaN/GaN HEMT. In the embodiment 1, good ohmic contact withan AlGaN layer 13 can only be formed after high-temperature thermal annealing under the protection of inert gas such as N2; and in the embodiment 2, the problem of poor adhesion between an Mo metal layer 28 and an Au metal layer 30 can be solved through a Ti metal layer 29, so that the requirement that the metal Au on the uppermost layer of ohmic contact is thick on some occasions is met.

Description

A kind of gallium nitride device multilayer ohmic contact system with composition metal barrier layer
Technical field:
What the present invention relates to is a kind of gallium nitride device multilayer ohmic contact system with composition metal barrier layer, is the ohmic contact system with composition metal barrier layer that is fit to aluminum gallium nitride compound/GaN high electron mobility transistor.Belong to technical field of semiconductors.
Background technology:
Aluminum gallium nitride (AlGaN)/gallium nitride (GaN) HEMT (HEMT) generally adopts the multiple layer metal ohmic contact system based on Ti/Al at present; Like Ti/Al/Ti/Au, Ti/Al/Ni/Au, Ti/Al/Pt/Au, Ti/Al/Mo/Au etc.; Adopt methods such as evaporation or sputter successively Ti, Al, Ti (Ni or Pt or Mo etc.), Au to be deposited to the AlGaN laminar surface; And annealing forms ohmic contact under the high temperature about 800 ℃, and its principle is commonly considered as Ti and Al reaction generation Al under lower temperature (200-300 ℃) 3Ti, when temperature further improves 400 ℃ or when above, the oxygen on Ti and AlGaN barrier layer surface reacts and is generating the Ti-Al-N alloy at the interface, simultaneously in the AlGaN barrier layer formation as alms giver's N room; Formation increases the probability that the electron tunneling barrier layer arrives 2DEG in the raceway groove to the middle doping of barrier layer, thereby forms ohmic contact (S.Ruvimov, Z.Liliental-Weber; J.Washburn, D.Qiao, S.S.Lau, and P.K.Chu; " Microstructure ofTi/Al Ohmic Contacts for n-AlxGa1-xN ", Applied Physics Letters, Vol.73; No.18, pp.2582-2584,1998).Wherein metals such as Ti, Ni, Pt, Mo play the effect on barrier layer, stop Au and Al to react and form the alloy-layer with high resistivity that one deck is referred to as " purple plague purpura ", and Au is convenient to follow-up test in order to reduce contact resistance.
Ti/Al/Ti/Au, Ti/Al/Ni/Au, Ti/Al/Pt/Au are to obtain lower ohmic contact resistance rate as the advantage of AlGaN/GaN HEMT metal ohmic contact system; Particularly Ti/Al/Ni/Au forms the ohmic contact resistance rate and can reach 0.2 Ω mm even lower (Jacobs et al.; J.Crys.Growth 241 (15-18) 2002); But its shortcoming is that the ohmic contact surface roughness is bigger; Smooth inadequately; This influences the lithography registration in the subsequent technique on the one hand, on the other hand its high temperature down the reliability of work also will be affected, the Au metal that is wherein adopted will the mode through electromigration get into semiconductor from the thin place of ohmic contact metal layer; Thereby be used for interconnected metal level at ohmic contact metal layer on it and form cavity as shown in Figure 1 (Mark J.Rosker at the interface; The DARPA Wide Band GapSemiconductor for RF Applications (WBGS-RF) Program:Phase IIResults, CSMANTECH 2009 presentation), cause component failure.
Ti/Al/Mo/Au is to obtain the surface of good evenness as the advantage of AlGaN/GaN HEMT metal ohmic contact system; This mainly has benefited from the high-melting-point (2623 ℃ of fusing points) of metal M o; The mutual solubility of Au and Mo lower (solubility of 850 ℃ of following Au in Mo is lower than 1%) in addition; To can be good at stoping Au to pass through the Mo layer in the process that forms ohmic contact and in the high temperature use of device and get into semiconductor; Thereby help to improve the reliability of device, but Ti/Al/Mo/Au is that its ohmic contact resistance rate is compared Ti/Al/Ni/Au and is greater as the shortcoming of AlGaN/GaN HEMT metal ohmic contact system.
Summary of the invention:
The invention provides a kind of gallium nitride device multilayer ohmic contact system with composition metal barrier layer; Be a kind of ohmic contact system of suitable aluminum gallium nitride compound/GaN high electron mobility transistor with composition metal barrier layer, it can satisfy simultaneously high-performance AlGaN/GaN HEMT required have little ohmic contact resistance rate, surface of good evenness and a high-reliability.
Technical solution of the present invention: a kind of gallium nitride device multilayer ohmic contact system with composition metal barrier layer is characterized in that aluminum gallium nitride (AlGaN)/gallium nitride (GaN) HEMT (HEMT) source electrode 16 and the ohmic contact system that drain electrode 17 is adopted are Ti/Al/Ni/Mo/Au.
Advantage of the present invention: multilayer ohmic contact provided by the present invention system can adopt the method for evaporation or sputter to be deposited on aluminum gallium nitride compound/gallium nitride surface and obtain, and at N 2Form ohmic contact through high annealing under the atmosphere, these methods are compatible mutually with existing method.The multilayer ohmic contact system that this aspect provided can satisfy simultaneously high-performance AlGaN/GaN HEMT required have requirements such as little ohmic contact resistance rate, surface of good evenness and high-reliability.
Description of drawings:
To be AlGaN/GaN HEMT form empty sketch map at the interface through being used for interconnected metal level on it at ohmic contact metal layer behind the hot operation with accompanying drawing 1.
Accompanying drawing 2 is general structural representations of AlGaN/GaN HEMT.
Accompanying drawing 3-Fig. 6 is the implementation step sketch map of embodiments of the invention 1.。
Accompanying drawing 7 is the ohmic contact test result figure with Ti/Al/Ni/Au, Ti/Al/Ni/Mo/Au and the Ti/Al/Mo/Au of identical resolution chart test acquisition.
Accompanying drawing 8 is the contrast situation signal electrographs that adopt the formed Ohm contact electrode surface topography of Ti/Al/Ni/Au ohmic contact system.
Accompanying drawing 9 is the contrast situation meaning electrographs that adopt the formed Ohm contact electrode surface topography of Ti/Al/Ni/Mo/Au ohmic contact system.
Accompanying drawing 10 is embodiments of the invention 2 structural representations.
Accompanying drawing 11 is structural representations of metals deposited layer among Fig. 5.
Accompanying drawing 12 is structural representations of metals deposited layer 19 among Figure 10.
Specific embodiment:
Map 2; Its structure comprises substrate 11, GaN resilient coating 12, AlGaN barrier layer 13 and source electrode 16, drain electrode 17 and gate electrode 18; Wherein substrate 11 is GaN resilient coatings 12; Be AlGaN barrier layer 13 on the GaN resilient coating 12, source electrode 16, drain electrode 17 and gate electrode 18 are on AlGaN barrier layer 13.
11 used material, GaN resilient coating 12 and 13 formation of AlGaN barrier layers can be reported (Y.-F.Wu et al., " High Al-content AlGaN/GaN HEMT ' s on SiCsubstrates with very high power performance, " in IEDM Tech.Dig. with reference to pertinent literature about substrate in aluminum gallium nitride (AlGaN)/gallium nitride (GaN) HEMT (HEMT); Dec.6-8,1999, pp.925-927 and M.Asif Khan; X.Hu, G.Simin, J.Yang; R.Gaska, and M.S.Shur, " AlGaN/GaN metal-oxide-semiconductorheterostructure field effect transistors on SiC substrates; " Appl.Phys.Lett., vol.77, pp.1339-1341; 2000. etc.); Gate electrode 18 is a Schottky contacts with barrier layer 13 formation, and its Schottky contacts system that selects for use is well-known in this area, is not described further.
Source electrode 16, drain electrode 17 are ohmic contact with barrier layer 13 formation, select for use the ohmic contact system to form source electrode 16 and drain electrode 17.The formation that the present invention is directed to source electrode 16, drain electrode 17 provides a kind of ohmic contact system that adopts Ni/Mo two-layer compound metal barrier.
Embodiment 1
Fig. 3-Fig. 6 is the implementation step of one embodiment of the present of invention; The photoresist layer 14 that on AlGaN barrier layer 13, applies at first as shown in Figure 3; Make public afterwards and develop and afterwards form figure as shown in Figure 4; On metal level shown in Figure 5 for another example 15 to AlGaN barrier layers 13, the photoresist layer 14, at last through peeling off remove photoresist 14 with and on metal level 15 obtain source electrode as shown in Figure 6 16 and drain electrode 17.
Wherein metal level 15 is shown in figure 11 is made up of five layers of metal level, from AlGaN layer 13 and metal level 15 begin at the interface form by Ti metal level 20, Al metal level 21, Ni metal level 22, Mo metal level 23 and Au metal level 24 successively.The thickness of Ti metal level 20 is at 15nm-30nm, and the ratio of Al metal level 21 and Ti metal level is at 3-10, and the thickness of Ni metal level 22 is between 10nm-30nm, and the thickness of Mo metal level 23 is at 25nm-50nm, and the thickness of Au metal level 24 is at 20nm-50nm.Metal level 15 can be obtained by the method for evaporation or sputter, and preferred deposit mode is an electron beam evaporation.
Source electrode 16 generally need be at N with drain electrode 17 2Down through forming good Ohmic contact with AlGaN layer 13 behind the high-temperature thermal annealing, preferably annealing temperature is that 800 ℃-870 ℃, annealing time are 15s-40s Deng inert gas shielding.
Among Fig. 7 to Ti/Al/Ni/Au, Ti/Al/Ni/Mo/Au and several kinds of ohmic contact systems of Ti/Al/Mo/Au at identical annealing conditions: N 2Atmosphere, 830 ℃ of annealing temperatures, annealing time are the ohmic contact test result that 30s obtains down; Adopted identical resolution chart in order to have in the comparativity test; The ohmic contact characteristic that can find out Ti/Al/Ni/Au and AlGaN/GaN formation is the best; Ti/Al/Ni/Mo/Au is close with it, and Ti/Al/Mo/Au is then very different.
Fig. 8, Fig. 9 have compared Ti/Al/Ni/Au and two kinds of ohmic contact systems of Ti/Al/Ni/Mo/Au formed Ohm contact electrode pattern behind N2 atmosphere, 830 ℃ of annealing temperatures, annealing time 30s, can find out adopt Ti/Al/Ni/Mo/Au ohmic contact system after the ohmic contact surface topography improve greatly.
Embodiment 2
Contrast Figure 10; The photoresist layer 14 that on AlGaN barrier layer 13, applies at first as shown in Figure 3; Make public afterwards and develop and afterwards form figure as shown in Figure 4; On deposited metal shown in Figure 10 for another example 19 to AlGaN barrier layers 13, the photoresist layer 14, at last through peeling off remove photoresist 14 with and on metal level 19 obtain source electrode as shown in Figure 6 16 and drain electrode 17.
Wherein metal level 19 is shown in figure 12 is made up of six layers of metal level, from AlGaN layer 13 and metal level 19 begin at the interface form by Ti metal level 25, Al metal level 26, Ni metal level 27, Mo metal level 28, Ti metal level 29 and Au metal level 30 successively.The thickness of Ti metal level 25 is at 15nm-30nm; The ratio of Al metal level 26 and Ti metal level is at 3-10, and the thickness of Ni metal level 27 is at 10nm-30nm, and the thickness of Mo metal level 28 is at 25nm-50nm; The thickness of Ti metal level 29 is at 10nm-30nm, and the thickness of Au metal level 30 is at 20nm-150nm.Metal level 19 can be obtained by the method for evaporation or sputter, and preferred deposit mode is an electron beam evaporation.
Need be at N with embodiment 1 source electrode 16 with drain electrode 17 2Down through forming good Ohmic contact with AlGaN layer 13 behind the high-temperature thermal annealing, preferably annealing temperature is that 800 ℃-870 ℃, annealing time are 15s-40s Deng inert gas shielding.
Embodiment 2 compares with embodiment 1 can obtain close ohmic contact resistance rate and surface topography; Embodiment 2 be through can solving Mo metal level 28 and the relatively poor problem of Au metal level 30 adhesions at Ti metal level 29, thereby satisfies under some occasion for the thicker situation of the metal A u of ohmic contact the superiors thickness requirement.

Claims (3)

1. the gallium nitride device multilayer ohmic contact system with composition metal barrier layer is characterized in that the ohmic contact system that aluminum gallium nitride (AlGaN)/gallium nitride (GaN) HEMT (HEMT) source electrode (16) and drain electrode (17) are adopted is Ti/Al/Ni/Mo/Au.
2. a kind of gallium nitride device multilayer ohmic contact system according to claim 1 with composition metal barrier layer; It is characterized in that from aluminum gallium nitride (AlGaN) layer (13) and source electrode (16) and drain electrode (17) begin at the interface form by a Ti metal level (20), an Al metal level (21), a Ni metal level (22), a Mo metal level (23) and an Au metal level (24) successively; Wherein the thickness of a Ti metal level (20) is at 15nm-30nm; The ratio of the one an Al metal level (21) and a Ti metal level (20) is at 3-10; The thickness of the one Ni metal level (22) is at 10nm-30nm; The thickness of the one Mo metal level (23) is at 25nm-50nm, and the thickness of an Au metal level (24) is at 20nm-50nm.
3. gallium nitride device multilayer ohmic contact system with composition metal barrier layer; It is characterized in that in aluminum gallium nitride (AlGaN)/gallium nitride (GaN) HEMT (HEMT) from aluminum gallium nitride (AlGaN) layer (13) and source electrode (16) and drain electrode (17) begin at the interface form by the 3rd Ti metal level (25), the 2nd Al metal level (26), the 2nd Ni metal level (27), the 2nd Mo metal level (28), the 2nd Ti metal level (29) and the 2nd Au metal level (30) successively; Wherein the thickness of the 3rd Ti metal level (25) is at 15nm-30nm; The ratio of the 2nd Al metal level (26) and the 3rd Ti metal level (25) is at 3-10; The thickness of the 2nd Ni metal level (27) is at 10nm-30nm; The thickness of the 2nd Mo metal level (28) is at 25nm-50nm; The thickness of the 2nd Ti metal level (29) is at 10nm-30nm, and the thickness of the 2nd Au metal level (30) is at 20nm-150nm.
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Publication number Priority date Publication date Assignee Title
US8877574B1 (en) 2013-05-21 2014-11-04 International Business Machines Corporation Elemental semiconductor material contact for high electron mobility transistor
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