CN114784104A - Radio frequency device without gold ohmic contact based on two-step annealing and preparation method thereof - Google Patents

Radio frequency device without gold ohmic contact based on two-step annealing and preparation method thereof Download PDF

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CN114784104A
CN114784104A CN202210377092.XA CN202210377092A CN114784104A CN 114784104 A CN114784104 A CN 114784104A CN 202210377092 A CN202210377092 A CN 202210377092A CN 114784104 A CN114784104 A CN 114784104A
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metal
thickness
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annealing
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尹以安
连梦小
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South China Normal University
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South China Normal University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT

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  • Power Engineering (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

The invention relates to a radio frequency device without gold ohmic contact based on two-step annealing and a preparation method thereof, comprising a first semiconductor lamination arranged on a substrate, wherein the first semiconductor lamination comprises a nitride channel layer; a source electrode, a second stack of semiconductor layers, and a drain electrode disposed on the same layer on the first stack of semiconductor layers, the second stack of semiconductor layers including an insertion layer disposed on the nitride channel layer and a nitride barrier layer disposed on the insertion layer; and a gate disposed on the nitride barrier layer; the source electrode and the drain electrode comprise a contact layer, a covering layer, a blocking layer and a cap layer which are sequentially stacked, the contact layer is formed by circularly stacking a low-work-function metal M sublayer and a metal Al sublayer, and the first sublayer and the last sublayer are metal M. The annealing alloy temperature is reduced, the problem of high on-resistance is solved, the cut-off frequency and the maximum oscillation frequency of the device are improved, and the process line is prevented from being polluted by impurities.

Description

Radio frequency device without gold ohmic contact based on two-step annealing and preparation method thereof
Technical Field
The invention relates to the field of radio frequency devices, in particular to a radio frequency device without gold ohmic contact based on two-step annealing and a preparation method thereof.
Background
One of the main problems of the current radio frequency power device is that the dynamic on-resistance is low, which causes the maximum switching frequency of the device to be reduced and the switching loss to be increased. Contact metallization schemes for source and drain electrodes have been studied and optimized for over twenty years. In order to ensure a stable, reliable and low-resistance ohmic contact HEMT device, a metal stack scheme of Ti/Al/Ni/Au is most commonly used. The contact layer, the covering layer, the barrier layer and the cap layer are respectively arranged from bottom to top. Ti which is commonly adopted as a contact layer can react with N in AlGaN to form TiN, so that a large amount of N vacancies are generated, and electrons are easy to generate a tunneling effect. Al is often used as the capping layer to prevent the donor concentration from decreasing due to outdiffusion of Al and Ga elements in AlGaN. Ni is often used as an isolation layer to prevent Au from diffusing to the AlGaN surface. Au is often used as a cap layer to prevent Ti and Al from being oxidized to form a high-resistance oxide layer, resulting in an increase in contact resistance. On the basis, the low-resistance contact is formed by annealing at the temperature ranging from 800 ℃ to 950 ℃ after the metal is stacked.
However, the mainstream semiconductor production field line in the domestic market is a HEMT device produced by a Si-CMOS process line, and a heavy metal Au in the traditional Ti/Al/Ni/Au scheme forms deep-level impurities in Si to pollute the CMOS process line. And the use of Au not only causes the formation of rough electrode surfaces and edges by high-temperature annealing, but also causes the occurrence of spike electric fields so as to reduce the breakdown characteristics of the device. Therefore, the low-temperature gold-free ohmic process is adopted, on one hand, the pollution problem caused by Au is avoided, so that the performance reliability of the HEMT device is improved, and on the other hand, the large-scale manufacturing of the Si-CMOS process line can be realized.
In the conventional non-gold ohmic contact electrodes such as W, Mo, Cu and the like, in the high-temperature annealing process, because a metal Al layer is generally required to be more than 100nm, the thickness of Al is far larger than that of a base layer Ti, and a large amount of unreacted Al is not melted with Ti-Al alloy which is agglomerated to form an island structure, so that the surface appearance and the edge appearance of a source-drain electrode are poor.
Disclosure of Invention
The invention mainly aims to provide a radio frequency device based on two-step annealing and free of gold ohmic contact and a preparation method thereof. Compared with a traditional Ti/Al/Ni/Au ohmic contact electrode metal system, the radio frequency device has the advantages that an Al thin layer is inserted into a low-work-function metal M layer, multiple layers of metals such as M/Al/MAL/M are formed to be alternately stacked to serve as contact layers, and then two-step annealing is carried out to form an ohmic contact mode, so that the contact area between the metal M and the metal Al is effectively increased, the Ti and the Al can fully react, the requirement on the process annealing temperature is lowered, and the ohmic contact with low surface appearance roughness and low contact resistance is formed. By virtue of the excellent electrical conductivity, thermal conductivity and plasticity of Cu, the Cu has high compatibility with copper interconnection technology and assembly technology, and the process complexity is reduced. The radio frequency device prepared on the basis effectively improves the problem of high on-resistance and improves the cut-off frequency and the maximum oscillation frequency.
The radio frequency device includes a substrate; a first semiconductor stack disposed on a substrate, including a nitride channel layer; a source electrode, a second stack of semiconductor layers, and a drain electrode disposed on the same layer on the first stack of semiconductor layers, the second stack of semiconductor layers including an insertion layer disposed on a nitride channel layer and a nitride barrier layer disposed on the insertion layer; and a gate disposed on the nitride barrier layer;
the source electrode and the drain electrode comprise a contact layer, a covering layer, a blocking layer and a cap layer which are sequentially stacked along the direction of the insertion layer pointing to the nitride barrier layer, the contact layer is formed by circularly stacking a low-work-function metal M sublayer and a metal Al sublayer and comprises at least three sublayers, wherein the first sublayer and the last sublayer are metal M.
The sub-layers have a thickness of 5nm to 15nm, and the contact layer has a total thickness of 20nm to 50 nm.
The metal M is at least one of Ti, Ta, Mo and V, and the total thickness of the metal M sub-layer is not less than 20 nm.
The covering layer is made of Al and the thickness of the covering layer is 30nm to 50 nm.
The sub-layer is formed by enabling the thickness of metal Al and the total thickness of the covering layer to be not more than 150 nm.
The barrier layer is made of Ni, Pt, Cr, Ti or Mo, and the thickness of the barrier layer is 30nm to 50 nm; the cap layer is made of Cu, and the thickness of the cap layer is 50nm to 80 nm.
After the contact layer and the covering layer are deposited, the barrier layer and the cap layer are depositedFirstly, carrying out low-temperature rapid thermal annealing treatment in an annealing atmosphere of N2The annealing temperature is 500 ℃ to 600 ℃, and the annealing time is 30s to 60 s.
After the barrier layer and the cap layer are deposited, high-temperature rapid thermal annealing treatment is carried out, wherein the annealing atmosphere is N2The annealing temperature is 700 ℃ to 850 ℃, and the annealing time is 60s to 10 min.
The nitride barrier layer is In 5-15 nm thickxAlyGa1-x-yAnd x is more than or equal to 0 and less than or equal to 1, and y is more than or equal to 0 and less than or equal to 1 in the N layers.
The first semiconductor stack further includes a stress release layer and a buffer layer sequentially stacked between the substrate and the nitride channel layer.
Compared with the prior art, the invention has at least the following beneficial effects:
according to the radio frequency device, the source and drain electrodes which are formed by sequentially laminating the contact layer, the covering layer, the barrier layer and the cap layer are arranged on the nitride channel layer, the insertion layer and the nitride barrier layer are arranged between the source and drain electrodes, the contact layer is formed by circularly laminating the low-work-function metal M sublayer and the metal Al sublayer, the cap layer is made of Cu, so that the radio frequency device without gold ohmic contact is formed, the Al sublayer is inserted between the metal M layers, the metal M layer is fully contacted with the metal Al, the annealing alloy temperature is reduced, the metal M and the N element are fully reacted to generate N vacancy, the electron tunneling effect is increased, the Al element in the AlGaN layer can be effectively prevented from diffusing outwards, the Al loss in AlGaN is reduced, the high conductivity of 2DEG is reserved, and the contact resistance of the device is reduced. The manufacturing cost of the nitride-based HEMT device is effectively reduced, and the process line is prevented from being polluted by impurities.
In the preparation process of the source and drain electrodes, after the contact layer and the covering layer are deposited, the first low-temperature annealing treatment is carried out, after the barrier layer and the cap layer are deposited, the second annealing treatment is carried out, and compared with the Ti/Al/Ni/Cu non-gold ohmic scheme with the same total thickness, the method effectively reduces the annealing temperature for forming ohmic contact and reduces the process difficulty.
Drawings
FIG. 1 is a schematic diagram of a multi-layer Ti/Al-overlapped HEMT gold-free ohmic contact electrode structure of Ti/Al/Ti/Al … Ti/Al/Ni/Cu according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a radio frequency device according to an embodiment of the present invention.
FIG. 3 is a schematic diagram of a pattern of a lithographic test patch TLM according to an embodiment of the present invention.
FIG. 4 is a graph of the I-V characteristics of a TLM test in accordance with an embodiment of the present invention.
FIG. 5 is a graph of the R-L characteristics of a TLM test in accordance with an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings, and the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, other embodiments obtained by persons of ordinary skill in the art without any creative effort belong to the protection scope of the present invention. The experimental methods described in the following examples are all conventional methods unless otherwise specified; the reagents and materials, unless otherwise indicated, are commercially available from a public disclosure.
Spatially relative terms, such as "under," "below," "lower," "over," "above," "upper," and the like, may be used herein to explain the positioning of one element relative to a second element. These terms are intended to encompass different orientations of the device in addition to different orientations than those depicted in the figures.
In addition, terms such as "first", "second", and the like are used to describe various elements, layers, regions, sections, etc. and are not intended to be limiting. The use of "having," "containing," "including," and the like, are open-ended terms that indicate the presence of stated elements or features, but do not exclude additional elements or features. Unless the context clearly dictates otherwise.
As shown in fig. 1 and 2, an embodiment of the present invention provides a radio frequency device without gold ohmic contact based on two-step annealing, which includes a substrate 1, which may be a Si substrate, a SiC substrate or a sapphire substrate,preferably a SiC substrate. A stress release layer 2, a buffer layer 3 and a nitride channel layer 4 are sequentially laminated on a substrate 1, and the stress release layer 2 is preferably an AlN layer and has a thickness of 10nm to 20 nm. The buffer layer 3 is made of GaN or AlGaN with a thickness of 1 μm to 2 μm, and in this embodiment, a GaN buffer layer is preferred. The nitride channel layer 4 is made of GaN, AlGaN or InGaN, and has a thickness of 20-50 nm, and in this embodiment, a GaN channel layer is preferred. The nitride channel layer 4 is laminated with an insertion layer 5 and a nitride barrier layer 6, and the insertion layer 5 is in contact with the nitride channel layer 4. The inserting layer is an AlN inserting layer with the thickness of 1nm to 2 nm. The nitride barrier layer 6 is one of AlGaN, InAlAs, InAlN and InAlGaN, and has a thickness of 6-10 nm, and preferably, the nitride barrier layer 6 is InxAlyGa1-x-yN, x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and preferably, the nitride barrier layer 6 is AlGaN.
The source electrode 8 and the drain electrode 7 are disposed on the surface of the nitride channel layer 4 in the same layer as the insertion layer 5, and the source electrode 8 and the drain electrode 7 are composed of a contact layer, a cap layer, a barrier layer, and a cap layer, which are sequentially stacked, the contact layer being in contact with the nitride channel layer. The contact layer is formed by circularly laminating a low-work-function metal M sublayer and a metal Al sublayer and comprises at least three sublayers, wherein the first sublayer and the last sublayer are metal M, the low-work-function metal M is selected from at least one of metals Ti, Ta, Mo and V, and preferably, the metal M is selected from Ti. The metal M is used as contact layer metal to react with N in the nitride channel layer to generate MN, so that a large number of N vacancies are formed, and tunneling effect of electrons is facilitated. For example, metal Al is inserted between Ti layers, so that the contact area between Ti and Al can be increased to form a multilayer Ti/Al lamination, the Ti contact layer reacts with nitrogen in nitride in the subsequent annealing environment, elements are diffused in the reaction process, especially excessive diffusion of the Al element can deteriorate the performance of the device, and the multilayer Ti/Al lamination can inhibit diffusion of Al under the condition of ensuring that Ti and N are fully reacted. Meanwhile, the use of a stack results in a reduction in annealing temperature with a constant total Al thickness for the multi-layer Ti/Al stack. For example, the contact layer is Ti/Al/Ti, Ti/Al/Ti/Al/Ti or Ti/Al/Ti/Al/Ti. Wherein the thickness of each sublayer is 5nm to 15nm, the total thickness of the contact layer is 20nm to 50nm, the total thickness of the metal M sublayer is not less than 20nm, the correlation exists between the thickness of the metal M and the thickness of the metal Al and the annealing temperature, when the thickness of the metal M is larger, the optimal annealing temperature for forming ohmic contact is 750 ℃ to 950 ℃, and when the thickness of the Al layer is larger, the optimal annealing temperature is about 550 ℃.
The covering layer is made of Al and has a thickness of 30nm to 50 nm. The thickness of the sublayer in the contact layer is not more than 150nm, and the sum of the thickness of the sublayer and the thickness of the covering layer is. The thickness relation between the contact layer and the covering layer is the key of the preparation of the nitride-based HEMT gold-free ohmic contact electrode. With the Al layer inserted into the Ti layer while keeping the total thickness of the Al layer constant, diffusion of Al can be suppressed under the condition of ensuring sufficient reaction of Ti with N in the nitride. And under the condition of ensuring that the total thickness of the Al is not changed, the annealing temperature is reduced by inserting the Al into the Ti layer, and the reliability of the device is ensured. After the covering layer is deposited, carrying out first low-temperature annealing treatment for 30-60 seconds at 500-600 ℃ in N atmosphere2。
The barrier layer is made of Ni, Pt, Cr, Ti or Mo and has a thickness of 30nm to 50 nm. Preferably, the barrier layer is Ni. The cap layer is made of Cu with good process compatibility, and the thickness of the cap layer is 50nm to 80 nm. The barrier layer prevents the Cu from generating serious diffusion in the subsequent high-temperature annealing process, avoids the generation of vacancy defects and reduces the contact resistance.
And after the cap layer is deposited, carrying out secondary thermal annealing treatment, wherein the annealing temperature is 700-850 ℃, the annealing time is 60 seconds-10 min, and the atmosphere is high-purity nitrogen.
A passivation layer 10 arranged on the surface of the barrier layer between the source electrode 8 and the drain electrode 7 and made of Si3N4、Al2O3Or TiO2. A gate opening is provided in the passivation layer 10, in which gate 9 is provided. The grid is preferably a T-shaped grid.
Based on the radio frequency device, the invention also discloses a preparation method of the radio frequency device, which comprises the following steps:
firstly, selecting a SiC substrate, and epitaxially growing an AlN stress release layer, a GaN buffer layer, a GaN channel layer, an AlN insert layer and an AlGaN barrier layer on the substrate in sequence to obtain an epitaxial wafer.
Then placing the epitaxial wafer in acetone for ultrasonic treatment for 5min, then placing the epitaxial wafer in isopropanol for ultrasonic treatment for 10min, then washing the epitaxial wafer with deionized water for more than 5 times, and drying the epitaxial wafer with nitrogen; reutilizing concentrated sulfuric acid and H2O2And strong acid solutions such as concentrated hydrochloric acid and the like are used for carrying out stepless cleaning on the surface of the epitaxial wafer to remove oxides and impurities on the surface.
And then, the cleaned epitaxial wafer is subjected to spin coating, prebaking is carried out for 90s at 105 ℃, a mask pattern is obtained after exposure for 6s and development for 60s, and detection is carried out by a step profiler. In the step, the other cleaned epitaxial wafer is subjected to glue homogenizing, the technological parameters are kept unchanged, and the test piece of the TLM electrode pattern is obtained after pre-baking, exposure and development.
And etching the buffer mesa by ICP for the first time. The degree of vacuum was 10-2Torr and the gas flow rate was BCl3The flow rate of the gas was 10.0sccm, Cl2The flow of gas is 90.0sccm, the etching depth is 210 nm-220 nm, the photoresist is removed, organic treatment is carried out, and microscopic examination is carried out.
And then, glue is homogenized, prebaking is carried out for 90s at 105 ℃, exposure is carried out for 6s, development is carried out for 60s, and then the ICP etching process is continuously adopted to etch the device region to form a source-drain ohmic contact electrode region. Keeping the ICP etching parameters unchanged, etching the ICP to the surface of the channel layer, and keeping the etching depth to be 25-30 nm.
Then, glue is homogenized, prebaking is carried out for 90s at 105 ℃, exposure is carried out for 6s, development is carried out for 60s, microscopic examination and step profiler examination are carried out, and a source drain ohmic contact electrode area is redefined.
And (3) selecting an electron beam evaporation process to sequentially evaporate contact layer metal Ti/Al/Ti with the thickness of 10nm/10nm/10nm and covering layer metal Al with the thickness of 90 nm. Followed by metal stripping. Then at N2Annealing and alloying at 600 deg.C for 30 s. In the step, electron beam evaporation is carried out on the test piece to deposit a contact metal layer Ti/Al/Ti and a covering layer metal Al, and then the annealing parameters are kept unchanged to anneal the test piece.
And then, continuing to select an electron beam evaporation process to deposit barrier layer metal Ni and cap layer metal Cu, wherein the thickness of the metal Ni layer is 30nm, the thickness of the metal Cu layer is 50nm, and then stripping the metal. After thatIn N2Annealing and alloying at high temperature of 700-850 ℃ for 60 s. In the step, electron beam evaporation is carried out on the test piece to deposit barrier layer metal Ni and cap layer metal Cu at the same time, and then annealing is carried out under the same condition, so that the GaN-based HEMT gold-ohmic-contact-free TLM test structure shown in figure 3 is obtained.
Depositing Si on the surface of the barrier layer between the source and the drain3N4And etching the passivation layer to define the gate region. And depositing grid metal in the grid region by using an electron beam evaporation process. Followed by an anneal at 850 c for 30 seconds to form a T-shaped gate. The structure thereof is shown in FIG. 2.
The TLM test structure obtained in this embodiment is subjected to an I-V test, and as shown in fig. 3, the TLM electrode pitches L thereof are 5um, 10um, 15um, 20um, 25um, and 30um, respectively. It can be seen that good ohmic contact characteristics are obtained from the I-V characteristic curve at 850 deg.c as shown in fig. 4. The R-L curve is shown in fig. 5, and it is found by calculation that the ohmic contact resistance prepared in this example is 0.129 Ω · mm, indicating that good ohmic contact performance is obtained.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.

Claims (10)

1. A radio frequency device based on two-step annealing and without gold ohmic contact comprises,
a substrate;
a first semiconductor stack disposed on a substrate, including a nitride channel layer;
a source electrode, a second stack of semiconductor layers, and a drain electrode disposed on the same layer on the first stack of semiconductor layers, the second stack of semiconductor layers including an insertion layer disposed on a nitride channel layer and a nitride barrier layer disposed on the insertion layer;
and a gate disposed on the nitride barrier layer;
the source electrode and the drain electrode comprise a contact layer, a covering layer, a blocking layer and a cap layer which are sequentially stacked along the direction of the insertion layer pointing to the nitride barrier layer, the contact layer is formed by circularly stacking a low-work-function metal M sublayer and a metal Al sublayer and comprises at least three sublayers, wherein the first sublayer and the last sublayer are metal M.
2. The radio frequency device according to claim 1, characterized in that the thickness of the sub-layer is 5nm to 15nm and the total thickness of the contact layer is 20nm to 50 nm.
3. The rf device of claim 2, wherein the metal M is at least one of Ti, Ta, Mo and V, and the total thickness of the metal M sub-layer is not less than 20 nm.
4. A radio frequency device according to one of claims 1 to 3, characterized in that said cover layer is made of Al and has a thickness of 30nm to 50 nm.
5. The radio frequency device according to claim 4, characterized in that the thickness of the sublayer of metallic Al and the total thickness of the cover layer are not more than 150 nm.
6. The RF device of claim 4, wherein the barrier layer is selected from Ni, Pt, Cr, Ti or Mo and has a thickness of 30nm to 50 nm; the capping layer is made of Cu, and the thickness of the capping layer is 50nm to 80 nm.
7. The RF device according to claim 5 or 6, wherein after the deposition of the contact layer and the capping layer and before the deposition of the barrier layer and the cap layer, a low temperature rapid thermal annealing process is performed in an atmosphere of N2The annealing temperature is 500 ℃ to 600 ℃, and the annealing time is 30s to 60 s.
8. The radio frequency device of claim 7, wherein the barrier layer and capAfter layer deposition, high-temperature rapid thermal annealing treatment is carried out, wherein the annealing atmosphere is N2The annealing temperature is 700 ℃ to 850 ℃, and the annealing time is 60s to 10 min.
9. The RF device of claim 5 or 6, wherein the nitride barrier layer is selected to be In with a thickness of 5nm to 15nmxAlyGa1-x-yAnd x is more than or equal to 0 and less than or equal to 1, and y is more than or equal to 0 and less than or equal to 1.
10. The radio frequency device according to claim 5 or 6, wherein the first semiconductor stack further comprises a stress relief layer and a buffer layer sequentially stacked between the substrate and the nitride channel layer.
CN202210377092.XA 2022-04-12 2022-04-12 Radio frequency device without gold ohmic contact based on two-step annealing and preparation method thereof Pending CN114784104A (en)

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