CN102142403A - Packaging structure with electromagnetic shielding and manufacturing method thereof - Google Patents
Packaging structure with electromagnetic shielding and manufacturing method thereof Download PDFInfo
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- CN102142403A CN102142403A CN2010101022692A CN201010102269A CN102142403A CN 102142403 A CN102142403 A CN 102142403A CN 2010101022692 A CN2010101022692 A CN 2010101022692A CN 201010102269 A CN201010102269 A CN 201010102269A CN 102142403 A CN102142403 A CN 102142403A
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- encapsulating structure
- electromagnetic shielding
- metal column
- screened film
- packing colloid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
The invention provides a packaging structure with electromagnetic shielding and a manufacturing method thereof. The packaging structure comprises a substrate unit, a metal column, a chip, packaging colloid and a shielding film, wherein the substrate unit comprises a first surface and a second surface opposite to each other, and the first surface is provided with a crystal placing area; the metal column is arranged on the first surface; the chip is arranged on and electrically connected to the crystal placing area; the packaging colloid covers the chip and the first surface, and a part of metal column is exposed; and the shielding film covers the packaging colloid, and is electrically connected with the metal column. In the invention, the packaging structure is obtained by means of a two-segment cutting manner, namely, at the first time, the packaging colloid is firstly cut to form the groove, and the packaging colloid is cut for the second time after the shielding film is formed on the groove and electrically connected with the metal column, and therefore the problem of the poor grounding of the shielding film is simplified and avoided.
Description
Technical field
The present invention relates to a kind of encapsulating structure and manufacture method thereof, refer to a kind of encapsulating structure and manufacture method thereof especially with electromagnetic shielding.
Background technology
Semiconductor package part (Semiconductor Package) is electrically connected at semiconductor chip (chip) on the bearing part of lead frame or substrate for a kind of; be coated on this semiconductor chip and the bearing part with packing colloid again as epoxy resin; protecting this semiconductor chip and bearing part, and can avoid the extraneous aqueous vapor or the infringement of pollutant by this packing colloid.
And how many conventional semiconductor packages parts can be subjected to extraneous electromagnetism noise jamming such as (EMI) when operation, causes the electrical operation function of this semiconductor package part undesired, therefore the whole electrical functionality of influence.
Because existing semiconductor package part is subject to the problem of electromagnetic interference, and just like United States Patent (USP) the 5th, 166, be exposed in the structure that is embedded into metal cap in the packing colloid No. 772.
See also Fig. 1, it is a United States Patent (USP) the 5th, 166, the three-dimensional cross-sectional schematic of No. 772 encapsulating structure; As shown in the figure, on substrate (substrate) 10, connect and put chip 11, and this chip 11 is electrically connected to this substrate 10 with a plurality of bonding wires 12, and outside this chip 11, be covered with netted metal cap (metal shield) 13, and has at least one earth terminal 14 on this substrate 10, make this metal cap 13 be electrically connected to this earth terminal 14, in addition, in this metal cap 13, chip 11, bonding wire 12, and formation packing colloid 15 on the part substrate 10, so that this metal cap 13 is embedded in this packing colloid 15, and operation by these netted metal cap 13 these chips 11 of shielding outside electromagnetic interference, thereby can avoid electrical operation function undesired, and the whole electrical functionality of influence.The encapsulating structure of other similar tool design of Electromagnetic Shielding comprises United States Patent (USP) the 4th, 218,578,4,838,475,4,953,002 and 5,030, and No. 935 revealers of institute.
But above-mentioned existing structure must be made earlier netted metal cap 13 separately, thereby increases the complexity of handling; Afterwards, again this metal cap 13 is covered on this chip 11, and this metal cap 13 is fixed on this substrate 10, like this then increase the degree of difficulty of assembling.In addition, after this netted metal cap 13 covers on this substrate 10, when on this metal cap 13, chip 11, bonding wire 12 and part substrate 10, forming packing colloid 15, this packing colloid 15 must can be covered on this chip 11 by netted metal cap 13, because this metal cap 13 is netted, when the fine and closely woven mesh of this packing colloid 15 by this metal cap 13, be easy to generate turbulent flow, cause bubble to produce, therefore be easy to produce bubble in this packing colloid 15, and in subsequent heat treatment, produce popcorn effect.
Other sees also Fig. 2; it is a United States Patent (USP) the 5th; 557; the three-dimensional cross-sectional schematic of No. 142 encapsulating structure; on substrate 20, connect and put chip 21; and this chip 21 is electrically connected to this substrate 20 with a plurality of bonding wires 22; on this chip 21, bonding wire 22 and part substrate 20, form packing colloid 23 again; to protect this chip 21, bonding wire 22 and substrates 20 by this packing colloid 23; and the exposed surface in this packing colloid 23 forms metal level 24 with coating or sputter, thereby by these metal level 24 shielding outside electromagnetic interference.Other similar encapsulating structures with design of Electromagnetic Shielding comprise United States Patent (USP) the 5th, 220,489,5,311,059 and 7,342, and No. 303 revealers of institute.
But, above-mentioned existing structure, though can exempt complicated processing, but must on this substrate 20, finish to connect and put chip 21 and packing colloid 23, and after cutting list (singular) and becoming single encapsulating structure, can form metal level 24 in the exposed surface coating or the sputter of this packing colloid 23, and this single encapsulating structure is difficult for the discharging pickup in handling, thereby is unfavorable for a large amount of productions.Moreover the mode of sputter also can't be applied to the encapsulating structure that packing colloid flushes with substrate side.
In addition, as United States Patent (USP) the 7th, 030, No. 469 disclosed a kind of encapsulating structure, it forms the groove that exposes outside bonding wire on packing colloid, and be formed with the conductor layer that is connected with this bonding wire on this groove and the packing colloid, to reach the effect of electromagnetic shielding, still, this conductor layer must be non-ferrous metal material, and only can be covered on groove and the packing colloid with deposition or sputtering way, can't be applied to the encapsulating structure that packing colloid flushes with substrate side.Moreover this conductor layer is that point contacts with this bonding wire, and the problem of loose contact is easily arranged.
Therefore, in view of the above-mentioned problems, how to avoid existing encapsulating structure with electromagnetic shielding and manufacture method thereof making complexity, assembling difficulty, be easy to produce popcorn effect in the heat treatment and be unfavorable for a large amount of productions the real problem of desiring most ardently solution at present that become.
Summary of the invention
Many disadvantages in view of above-mentioned prior art, the purpose of this invention is to provide a kind of encapsulating structure and manufacture method thereof, with making complexity, the assembling difficulty of the encapsulating structure of avoiding existing in the prior art electromagnetic shielding and manufacture method thereof, be easy to produce in the heat treatment popcorn effect and be unfavorable for problems such as a large amount of productions with electromagnetic shielding.
For reaching above-mentioned and other purpose, the invention provides a kind of encapsulating structure of tool electromagnetic shielding, comprising: base board unit, metal column, chip, packing colloid, and screened film, wherein, described base board unit has opposite first and second surface, and this first surface has the crystalline setting area; Described metal column is located on this first surface; Described chip connects to be put and is electrically connected on this crystalline setting area; Described packing colloid coats this chip and first surface, and exposes outside this part metals post; Described screened film coats this packing colloid and electrically connects this metal column.
For obtaining aforesaid encapsulating structure, the present invention also discloses a kind of manufacture method of encapsulating structure of tool electromagnetic shielding, comprise: prepared substrate, definition has a plurality of lines of cut that distribute in length and breadth to surround a plurality of base board units on this substrate, and each base board unit tool opposite first and second surface have the crystalline setting area in each first surface; On at least one line of cut at each base board unit edge, form metal column; On the crystalline setting area of each base board unit, connect and put and electrically connect chip; On this substrate, chip and metal column, form packing colloid, to coat described chip and metal column; Cut this packing colloid and metal column for the first time along each line of cut, in this packing colloid, to form a plurality of grooves that expose each metal column; In this packing colloid surface and groove, form screened film, electrically connect described metal column to make this screened film; And carry out cutting the second time along each line of cut, cutting screened film and the substrate in this groove, thereby make this screened film coat this packing colloid side, and flush with this substrate side.
Comply with the manufacture method of the encapsulating structure of above-mentioned tool electromagnetic shielding, this metal column can be located on the line of cut or vertical line of cut that distributes of this cross direction profiles, perhaps, this metal column can be located on the intersection point of this cross direction profiles line of cut and vertical distribution line of cut, even the part metals post is located on the single line of cut, and the part metals post is located on the intersection point of line of cut.
In one embodiment of this invention, the material that forms this metal column is copper, tin or gold.This chip has corresponding acting surface and non-acting surface, and on this acting surface, have a plurality of signal weld pads, power supply weld pad and ground connection weld pad, and described signal weld pad, power supply weld pad and ground connection weld pad electrically connect with routing or cover brilliant this base board unit that electrically connects.
Again in manufacture method of the present invention, this degree of depth that cuts for the first time greater than, equal or less than the thickness of this packing colloid, and this width that cuts for the second time is formed at the side surface of this packing colloid less than the width of this groove to make this screened film.
On the implementation, form this screened film and can be carbonaceous (carbon-based) material or containing metal powder body material, and this screened film also can be formed in the exposed surface and described groove of this packing colloid by screen painting, solidifies this screened film then.Perhaps, prior to splashing into liquid carbonaceous material or containing metal powder body material in the described groove, to form first screened film, on the exposed surface of this packing colloid and first screened film in the described groove, form the secondary shielding film again, solidify this first screened film and secondary shielding film afterwards.
In addition, the second surface of described this base board unit also can comprise a plurality of soldered balls of formation.
As from the foregoing, the present invention has the encapsulating structure and the manufacture method thereof of electromagnetic shielding, on each base board unit of this substrate, form metal column and in this crystalline setting area, connect and put chip, then in this substrate, form packing colloid on chip and the metal column, cut for the first time this packing colloid then, in this packing colloid, to form a plurality of grooves of cutting apart in length and breadth, and cut apart each metal column to expose its side surface, but the described base board unit of cutting and separating not, in the exposed surface of this packing colloid and described groove, form screened film again, carry out cutting the second time along each groove more afterwards, to cut screened film and the substrate in this groove, to make this screened film be formed at the side of this packing colloid, method of the present invention can in cut single before the formation by groove dexterously, and in wherein inserting electromagnetic shielding material, thereby contact as face with metal column, exempt as United States Patent (USP) the 7th, 030, No. 469 disclosed point contacts issuable imperfect earth problem, more can exempt the making complexity of existing structure and manufacture method thereof, the assembling difficulty, be easy in the heat treatment to produce popcorn effect and be unfavorable for defective such as a large amount of productions.
Description of drawings
Fig. 1 is a United States Patent (USP) the 5th, 166, the three-dimensional cross-sectional schematic of No. 772 encapsulating structure.
Fig. 2 is a United States Patent (USP) the 5th, 557, the three-dimensional cross-sectional schematic of No. 142 encapsulating structure.
Fig. 3 A to 3F-3 has the cross-sectional schematic of manufacture method of the encapsulating structure of electromagnetic shielding for the present invention; Wherein, Fig. 3 A ' is the cutaway view of Fig. 3 A, Fig. 3 A " be another embodiment of Fig. 3 A, this Fig. 3 D-1 and 3D-2 are another embodiment of Fig. 3 D, Fig. 3 F-1 to 3F-3 is other embodiment of the encapsulating structure of tool electromagnetic shielding of the present invention.
The main element symbol description
10 substrates
11 chips
12,37 bonding wires
13 metal caps
14 earth terminals
15 packing colloids
20 substrates
21 chips
22,37 bonding wires
23 packing colloids
24 metal levels
3,3 ', 3 ", 3 " ' encapsulating structure
30 substrates
301 lines of cut
301a cross direction profiles line of cut
The 301b line of cut that vertically distributes
31 base board units
The 31a first surface
The 31b second surface
311 crystalline setting areas
32 metal columns
320 side surfaces
33 chips
34 packing colloids
340 grooves
341 sides
35 screened films
351 first screened films
352 secondary shielding films
36 soldered balls
The d degree of depth
T thickness
312 chip carriers
313 pins
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the content that this specification disclosed.
See also Fig. 3 A to 3F-3, be the manufacture method of the encapsulating structure of the disclosed tool electromagnetic shielding of the present invention.
Shown in Fig. 3 A and 3A ', this Fig. 3 A is the top view of Fig. 3 A '; As shown in the figure, at first, prepare a substrate 30, definition has a plurality of lines of cut 301 that distribute in length and breadth to surround a plurality of base board units 31 on this substrate 30, as shown in the figure, this line of cut 301 comprises a plurality of cross direction profiles line of cut 301a and vertical distribution line of cut 301b, and each base board unit 31 has opposite first 31a and second surface 31b, has crystalline setting area 311 in each first surface 31a.
According to the above, also forming with copper, tin or gold at least one line of cut 301 at each base board unit 31 edge is the metal column 32 of material, to connect earth terminal or the ground plane (not shown) on this base board unit 31, and this metal column 32 can be located at this cross direction profiles line of cut 301a, vertically distribute on the line of cut 301b, perhaps, this metal column 32 can be located on the intersection point of this cross direction profiles line of cut 301a and vertical distribution line of cut 301b, even as Fig. 3 A " shown in; part metals post 32 is located on the single line of cut, and part metals post 32 is located on the intersection point of line of cut.
Shown in Fig. 3 B, on the crystalline setting area 311 of each base board unit 31, connect and put and electrically connect chip 33, this chip 33 has corresponding acting surface and non-acting surface, have a plurality of signal weld pads, power supply weld pad and ground connection weld pad on this acting surface, described signal weld pad, power supply weld pad and ground connection weld pad are with routing (wire bonding) or cover crystalline substance (flip chip) mode and electrically connect this base board unit 31; In present embodiment, explain with the routing electric connection, but not as limit.
Then, also on this substrate 30, chip 33 and metal column 32, form packing colloid 34, to coat described chip 33 and metal column 32.
Shown in Fig. 3 C, cut for the first time this packing colloid 34 and metal column 32 along each line of cut 301, in this packing colloid 34, forming a plurality of grooves 340 that expose each metal column 32, and this depth d that cuts for the first time can greater than, equal or less than the thickness t of this packing colloid 34.
Shown in Fig. 3 D, forming material with screen painting in these packing colloid 34 surfaces and groove 340 is the screened film 35 of carbonaceous material or containing metal powder body material, and make this screened film 35 electrically connect the side surface 320 of described metal column 32, and behind screen painting, be cured, so can be by the shielding of this screened film 35, prevent that this chip 33 is subjected to electromagnetic interference, thereby so that normal operation to be provided.
Other sees also Fig. 3 D-1 and 3D-2, it is for forming another embodiment of this screened film 35, be in in described groove 340, splashing into earlier liquid carbonaceous material or containing metal powder body material earlier, to form first screened film 351, shown in Fig. 3 D-1 with the different of previous embodiment; Then, on the exposed surface of this packing colloid 34 and first screened film 351 in the described groove 340, form secondary shielding film 352, shown in Fig. 3 D-2; This first screened film 351 of final curing and secondary shielding film 352.
Shown in Fig. 3 E, line of cut 301 along each groove 340 carries out cutting the second time, to cut screened film 35 and the substrate 30 in this groove 340, and the width w2 that this cuts for the second time cuts for the first time less than this or the width w1 of groove 340, thereby make this screened film 35 coat these packing colloid 34 sides 341, and flush with these substrate 30 sides.
Shown in Fig. 3 F, comprise that also the second surface 31b of this base board unit 31 forms a plurality of soldered balls 36, for being electrically connected to other electronic installation.
According to above-mentioned manufacture method, the present invention also provides a kind of encapsulating structure 3 of tool electromagnetic shielding, comprising: base board unit 31, metal column 32, chip 33, packing colloid 34 and screened film 35.
Described base board unit 31 has opposite first 31a and second surface 31b, and 31a has crystalline setting area 311 in this first surface.
Described metal column 32 is located on this first surface 31a, and the material that forms this metal column 32 can be copper, tin or gold.
Described chip 33 has corresponding acting surface and non-acting surface, and have a plurality of signal weld pads, power supply weld pad and ground connection weld pad on this acting surface, described signal weld pad, power supply weld pad and ground connection weld pad are with routing or cover crystal type and electrically connect this base board unit 31.
Described packing colloid 34 coats the first surface 31a of this chip 33 and base board unit 31, and exposes outside this part metals post 32.
Described screened film 35 can be carbonaceous material or containing metal powder body material, coats this packing colloid 34 and electrically connects this metal column 32.As shown in the figure, in the present embodiment, when cutting this packing colloid 34 and metal column 32 for the first time, this depth d that cuts for the first time equals the thickness t of this packing colloid 34, therefore, this screened film 35 coats this metal column 32, and this screened film 35 flushes with these substrate 30 sides.
According to the encapsulating structure of above-mentioned tool electromagnetic shielding, also can comprise a plurality of soldered balls 36 again, be located at the second surface 31b of this base board unit 31, for being electrically connected to other electronic installation.
See also Fig. 3 F-1, another embodiment of the encapsulating structure 3 ' of its tool electromagnetic shielding, be in shown in Fig. 3 C when each line of cut 301 cuts this packing colloid 34 and metal column 32 for the first time with previous embodiment different, this depth d that cuts for the first time is greater than the thickness t of this packing colloid 34.Therefore, this screened film 35 coats this metal column 32 and part substrate 30, and this screened film 35 flushes with these substrate 30 sides.
See also Fig. 3 F-2, the encapsulating structure 3 of its tool electromagnetic shielding " another embodiment; be in shown in Fig. 3 C when each line of cut 301 cuts this packing colloid 34 and metal column 32 for the first time with previous embodiment different, this depth d that cuts for the first time is less than the thickness t of this packing colloid 34.Therefore, this screened film 35 only coats this part metals post 32, so this screened film 35 flushes with this metal column 32 and substrate 30 sides.
See also Fig. 3 F-3, it is the embodiment again with encapsulating structure of electromagnetic shielding, be lead frame with different being in of previous embodiment in the base board unit 31 of this encapsulating structure, and this lead frame has chip carrier 312 and a plurality of pin 313, the encapsulating structure 3 of present embodiment " ' also comprise this metal column 32; be located on each pin 313; chip 33; connect and place on the chip carrier 312; and electrically connect these pins 313 with bonding wire 37; packing colloid 34 coats this chip 33 and lead frame, and exposes outside this part metals post 32; And screened film 35, coat this packing colloid 34 and electrically connect this metal column 32.
The present invention has the encapsulating structure and the manufacture method thereof of electromagnetic shielding, on the line of cut position of this substrate, form metal column, and in the crystalline setting area of this base board unit first surface, connect and put chip, then in this substrate, form packing colloid on chip and the metal column, to coat described chip and metal column, cut this packing colloid for the first time along each line of cut then, but do not penetrate this substrate, in this packing colloid, to form many grooves of cutting apart in length and breadth, and cut apart each metal column to expose its side surface, in the exposed surface of this packing colloid and described groove, form screened film again, carry out cutting the second time along the line of cut of each groove more afterwards, cutting this screened film and substrate, and make this screened film be formed at the side of this packing colloid, and be divided into a plurality of encapsulation units; Owing to cut apart this packing colloid earlier to form groove, but the described base board unit of cutting and separating not, in packing colloid surface of having cut apart and groove, form screened film again, cut apart this packing colloid and described base board unit afterwards more fully, method of the present invention can in cut single before the formation by groove dexterously, and in wherein inserting electromagnetic shielding material, thereby contact as face with metal column and to promote the ground connection quality, more can exempt existing structure and manufacture method thereof making complexity, assembling difficulty, be easy to produce in the heat treatment popcorn effect and be unfavorable for defective such as a large amount of productions.
The foregoing description is in order to illustrative principle of the present invention and effect thereof, but not is used to limit the present invention.Any those skilled in the art all can make amendment to the foregoing description under spirit of the present invention and category.So the scope of the present invention, should be listed as claims scope.
Claims (16)
1. the encapsulating structure with electromagnetic shielding is characterized in that, this encapsulating structure comprises:
Base board unit has opposite first and second surface, and this first surface has the crystalline setting area;
Metal column is located on this first surface;
Chip connects and puts and be electrically connected on this crystalline setting area;
Packing colloid coats this chip and this base board unit first surface, and exposes outside this part metals post; And
Screened film coats this packing colloid and electrically connects this metal column.
2. the encapsulating structure with electromagnetic shielding according to claim 1 is characterized in that, the material that forms this metal column is copper, tin or gold.
3. the encapsulating structure with electromagnetic shielding according to claim 1 is characterized in that, this chip is with routing or cover crystal type and electrically connect this base board unit.
4. the encapsulating structure with electromagnetic shielding according to claim 1 is characterized in that, what form this screened film is carbonaceous material or containing metal powder body material.
5. the encapsulating structure with electromagnetic shielding according to claim 1 is characterized in that this screened film coats this metal column, and this screened film flushes with this substrate side.
6. the encapsulating structure with electromagnetic shielding according to claim 1 is characterized in that, this screened film flushes with this metal column and substrate side.
7. the manufacture method with encapsulating structure of electromagnetic shielding is characterized in that, this manufacture method comprises:
Prepared substrate, definition has a plurality of lines of cut that distribute in length and breadth surrounding a plurality of base board units on this substrate, and each base board unit has opposite first and second surface, has the crystalline setting area in each first surface;
On at least one line of cut at each base board unit edge, form metal column;
On the crystalline setting area of each base board unit, connect and put and electrically connect chip;
On this substrate, chip and metal column, form packing colloid, to coat described chip and metal column;
Cut this packing colloid and metal column for the first time along each line of cut, in this packing colloid, to form a plurality of grooves that expose each metal column;
In this packing colloid surface and groove, form screened film, electrically connect described metal column to make this screened film; And
Carry out cutting the second time along each line of cut, cutting screened film and this substrate in this groove, thereby make this screened film coat this packing colloid side, and flush with this substrate side.
8. the manufacture method with encapsulating structure of electromagnetic shielding according to claim 7 is characterized in that, this metal column is located on the line of cut or vertical line of cut that distributes of this cross direction profiles.
9. the manufacture method with encapsulating structure of electromagnetic shielding according to claim 7 is characterized in that, this metal column is located on the intersection point of this cross direction profiles line of cut and vertical distribution line of cut.
10. the manufacture method with encapsulating structure of electromagnetic shielding according to claim 7 is characterized in that, the material that forms this metal column is copper, tin or gold.
11. the manufacture method with encapsulating structure of electromagnetic shielding according to claim 7 is characterized in that, this chip is with routing or cover crystal type and electrically connect this base board unit.
12. the manufacture method with encapsulating structure of electromagnetic shielding according to claim 7 is characterized in that, this degree of depth that cuts for the first time greater than, equal or less than the thickness of this packing colloid.
13. the manufacture method with encapsulating structure of electromagnetic shielding according to claim 7 is characterized in that, this width that cuts for the second time is less than the width of this groove.
14. the manufacture method with encapsulating structure of electromagnetic shielding according to claim 7 is characterized in that, what form this screened film is carbonaceous material or containing metal powder body material.
15. the manufacture method with encapsulating structure of electromagnetic shielding according to claim 7 is characterized in that, this screened film is formed in the exposed surface and described groove of this packing colloid with screen painting, and solidifies this screened film.
16. the manufacture method with encapsulating structure of electromagnetic shielding according to claim 7 is characterized in that, the method that forms this screened film in this manufacture method comprises:
In described groove, splash into liquid carbonaceous material or containing metal powder body material, to form first screened film;
On the exposed surface of this packing colloid and first screened film in the described groove, form the secondary shielding film with screen painting; And
Solidify this first screened film and secondary shielding film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101022692A CN102142403A (en) | 2010-01-28 | 2010-01-28 | Packaging structure with electromagnetic shielding and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101022692A CN102142403A (en) | 2010-01-28 | 2010-01-28 | Packaging structure with electromagnetic shielding and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN102142403A true CN102142403A (en) | 2011-08-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101022692A Pending CN102142403A (en) | 2010-01-28 | 2010-01-28 | Packaging structure with electromagnetic shielding and manufacturing method thereof |
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| Country | Link |
|---|---|
| CN (1) | CN102142403A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102548239A (en) * | 2012-01-09 | 2012-07-04 | 华为终端有限公司 | Method for manufacturing PCB (Printed Circuit Board), PCB and electronic equipment |
| CN103493198A (en) * | 2012-09-11 | 2014-01-01 | 华为终端有限公司 | Electronic device and manufacturing method thereof |
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| CN112103259A (en) * | 2020-09-28 | 2020-12-18 | 东莞记忆存储科技有限公司 | Chip packaging structure with graphene heat dissipation coating and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102548239A (en) * | 2012-01-09 | 2012-07-04 | 华为终端有限公司 | Method for manufacturing PCB (Printed Circuit Board), PCB and electronic equipment |
| US9426935B2 (en) | 2012-01-09 | 2016-08-23 | Huawei Device Co., Ltd. | Method for manufacturing circuit board, circuit board, and electronic device |
| CN103493198A (en) * | 2012-09-11 | 2014-01-01 | 华为终端有限公司 | Electronic device and manufacturing method thereof |
| CN103493198B (en) * | 2012-09-11 | 2016-05-25 | 华为终端有限公司 | Electronic device and electronic device manufacturing method |
| CN106298742A (en) * | 2012-12-28 | 2017-01-04 | 日月光半导体制造股份有限公司 | Semiconductor package assembly and a manufacturing method thereof |
| CN106298742B (en) * | 2012-12-28 | 2019-03-15 | 日月光半导体制造股份有限公司 | Semiconductor package assembly and a manufacturing method thereof |
| CN106935571A (en) * | 2015-12-29 | 2017-07-07 | 意法半导体公司 | Electronic packing body and associated method with electromagnetic interference shield |
| CN107046021A (en) * | 2017-06-08 | 2017-08-15 | 安徽安努奇科技有限公司 | A kind of chip grade packaging structure and preparation method thereof |
| WO2020253147A1 (en) * | 2019-06-17 | 2020-12-24 | 潍坊歌尔微电子有限公司 | Shielding process for sip packaging |
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Application publication date: 20110803 |